CN116995000B - Debonding cleaning device and debonding cleaning method - Google Patents

Debonding cleaning device and debonding cleaning method Download PDF

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Publication number
CN116995000B
CN116995000B CN202311249676.XA CN202311249676A CN116995000B CN 116995000 B CN116995000 B CN 116995000B CN 202311249676 A CN202311249676 A CN 202311249676A CN 116995000 B CN116995000 B CN 116995000B
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wafer
unit
substrate
carrier plate
base
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CN116995000A (en
Inventor
王正根
常健伟
陈超
何飞
陈万群
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Maiwei Technology Zhuhai Co ltd
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Maiwei Technology Zhuhai Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention relates to the field of semiconductor equipment, in particular to a bonding-removing cleaning device and a bonding-removing cleaning method, aiming at solving the technical problems that residual glue is left on a wafer, the residual glue on a supporting plate is easy to pollute a mechanical arm and the supporting plate is subjected to secondary pollution in the related art. The bonding-removing cleaning equipment can remove the connection between the wafer and the carrier plate through the bonding-removing unit; through the wafer cleaning unit, the residual glue on the surface of the wafer can be cleaned; through separation rotary mechanism, can drive the support plate upset to make the clean face of support plate down, the incomplete glue face is upwards, so, make the arm can remove the clean face to the support plate, with snatching or adsorbing the support plate, avoided the secondary pollution of support plate.

Description

Debonding cleaning device and debonding cleaning method
Technical Field
The invention relates to the field of semiconductor equipment, in particular to a bonding-removing cleaning device and a bonding-removing cleaning method.
Background
From the trend of the development of semiconductor technology, along with the trend of moore's law, the importance of packaging technology is prominent, and the packaging technology becomes an important means for miniaturization, multifunctionality, power consumption reduction and bandwidth improvement of electronic products, and advanced packaging is developed towards the three-dimensional directions of system integration, high speed, high frequency and high density.
In order to satisfy the fan-out type package of ultra-high density wiring and the 2.5D and 3D packages of vertical interconnection technology typified by TSVs and the ultra-thin package thereof, a support board is widely required. Specifically, the wafer is temporarily bonded to the support plate by a bonding technique to provide sufficient mechanical support, and after the processing process is completed, the wafer is then unbonded from the support plate to separate the wafer from the support plate.
It should be noted that, after the bonding is released, the surface where the wafer and the support plate are connected will have residual glue, and the residual glue surface of the wafer faces upward, and the residual glue surface of the support plate faces downward, so that the mechanical arm is easy to be polluted in the process of transporting the support plate, and the polluted mechanical arm will pollute the support plate at the back, thereby increasing the cleaning workload.
Disclosure of Invention
The invention aims to provide a debonding and cleaning device and a debonding and cleaning method, which are used for solving the technical problems that residual glue is left on a wafer, the residual glue on a supporting plate is easy to pollute a mechanical arm and the supporting plate is subjected to secondary pollution in the related art.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
in a first aspect, the present invention provides a debonding cleaning apparatus comprising: the wafer cleaning device comprises a loading and unloading unit, a wafer positioning unit, a de-bonding unit, a wafer cleaning unit and a conveying unit;
the loading and unloading unit is used for inputting the substrate to be de-bonded and outputting the wafer and the carrier plate after de-bonding;
the wafer positioning unit is used for centering and positioning the substrate to be unbonded;
the bonding-releasing unit comprises a separating base, a laser emitting mechanism and a separating rotating mechanism, wherein the separating base is used for fixing a substrate to be bonded, the laser emitting mechanism is used for emitting laser to the substrate to be bonded, and the separating rotating mechanism is used for fixing a carrier plate and driving the carrier plate to turn around a horizontal line;
the wafer cleaning unit is used for cleaning a wafer;
the conveying unit comprises at least one mechanical arm, and the mechanical arm is used for conveying a substrate to be de-bonded, conveying and blanking wafers and blanking carrier plates.
Further, the separation and rotation mechanism comprises a base, an adsorption assembly and a rotation driving assembly;
the base is positioned right below the laser emission mechanism and provided with a first end and a second end which are opposite in direction, and a through hole penetrating the base is formed from the first end to the second end, and the through hole is used for allowing laser emitted by the laser emission mechanism to pass through;
the adsorption component is arranged on the base and is used for adsorbing the carrier plate to the first end or loosening the carrier plate;
the rotary driving assembly is in transmission connection with the base so as to drive the base to rotate, and the rotation axis is perpendicular to the axis of the through hole.
Further, the through hole is circular;
the adsorption component comprises a plurality of suction nozzles, and the suction nozzles are arranged at the first end at intervals around the axis of the through hole.
Further, the adsorption assembly further comprises a push rod and a linear driver;
the ejector rods are distributed at intervals around the axis of the through hole and are connected with the base in a sliding manner;
the linear driver is in transmission connection with the ejector rod so as to drive the ejector rod to slide along the axial direction of the through hole.
Further, the de-bonding unit further comprises a lifting driving mechanism;
the lifting driving mechanism is in transmission connection with the separation rotating mechanism so as to drive the separation rotating mechanism to move towards a direction approaching to or away from the separation base.
Further, the loading and unloading unit comprises a loading and unloading material box and a loading plate unloading material box;
the upper and lower material boxes are used for feeding substrates to be de-bonded and discharging wafers;
the carrier plate blanking box is used for blanking the carrier plate.
Further, the debonding and cleaning device further comprises a plasma cleaning unit and/or a laser circular cutting unit;
the plasma cleaning unit is used for cleaning the wafer;
the laser circular cutting unit is used for circular cutting the edge of the substrate to be bonded.
In a second aspect, the present invention provides a method for debonding and cleaning, based on the debonding and cleaning apparatus, comprising the steps of:
s100: the mechanical arm takes away the substrate to be de-bonded from the feeding and discharging material box and places the substrate in the wafer positioning unit;
s200: the wafer positioning unit performs centering positioning on the substrate to be Jie Jian combined;
s300: the mechanical arm places the positioned substrate to be de-bonded on the separation base, and the separation base clamps or adsorbs the substrate to be de-bonded to fix the wafer at the bottom of the substrate to be de-bonded;
s400: the laser emission mechanism irradiates laser to the substrate to be de-bonded to perform de-bonding;
s500: the lifting driving mechanism drives the separation rotating mechanism to move to the position above the substrate to be de-bonded, the separation rotating mechanism is lowered to a preset position, then the adsorption component adsorbs and fixes the carrier plate, and then the separation rotating mechanism moves upwards to separate the carrier plate from the wafer;
s600: the mechanical arm conveys the wafer after the bonding separation to the wafer cleaning unit from the separation base to clean the wafer;
s700: the rotary driving assembly drives the base to turn over 180 degrees, so that the unbinding surface of the carrier plate faces upwards;
s800: the mechanical arm stretches into the space between the base and the carrier plate, the carrier plate is grabbed or adsorbed from the back surface of the carrier plate, and after the adsorption component releases the adsorption to the back surface of the carrier plate, the mechanical arm places the carrier plate in a carrier plate blanking box;
s900: and the mechanical arm places the cleaned wafer in an upper and lower material box.
Further, after the bonding is released, the mechanical arm firstly transmits the wafer to the plasma cleaning unit, and after the cleaning is finished, the wafer is transmitted to the wafer cleaning unit.
Furthermore, before centering and positioning, the mechanical arm firstly transmits the substrate to be debonded to the laser circular cutting unit, and after edge circular cutting is completed, the substrate is transmitted to the wafer positioning unit.
In summary, the technical effects that the de-bonding cleaning device provided by the invention can realize are as follows:
the invention provides a bonding-removing cleaning device which comprises a loading and unloading unit, a wafer positioning unit, a bonding-removing unit, a wafer cleaning unit and a conveying unit; the loading and unloading unit is used for inputting the substrate to be de-bonded and outputting the wafer and the carrier plate after de-bonding; the wafer positioning unit is used for centering and positioning the substrate to be debonded; the bonding-releasing unit comprises a separating base, a laser emitting mechanism and a separating rotating mechanism, wherein the separating base is used for fixing a substrate to be bonded, the laser emitting mechanism is used for emitting laser to the substrate to be bonded, and the separating rotating mechanism is used for fixing the carrier plate and driving the carrier plate to turn around a horizontal line; the wafer cleaning unit is used for cleaning the wafer; the conveying unit comprises at least one mechanical arm, and the mechanical arm is used for conveying a substrate to be de-bonded, conveying and blanking wafers and blanking carrier plates.
In the de-bonding cleaning equipment, the connection between the wafer and the carrier plate can be released through the de-bonding unit; through the wafer cleaning unit, the residual glue on the surface of the wafer can be cleaned; through separation rotary mechanism, can drive the support plate upset to make the clean face of support plate down, the incomplete glue face is upwards, so, make the arm can remove the clean face to the support plate, with snatching or adsorbing the support plate, avoided the secondary pollution of support plate.
Therefore, the wafer after the bonding is released can be cleaned by adopting the bonding release cleaning equipment, the cleaning of the mechanical arm is ensured when the carrier plate is conveyed, the carrier plate is prevented from being polluted by secondary pollution, and the cleaning workload is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a first embodiment of a debonding cleaning apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a second embodiment of a debonding cleaning apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a third embodiment of a debonding cleaning apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a debonding unit according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a separation rotation mechanism according to an embodiment of the present invention;
fig. 6 and 7 are schematic diagrams before and after the substrate to be debonded is debonded.
Icon: 100-feeding and discharging units; 110-loading and unloading material boxes; 120-a carrier plate blanking box;
200-a wafer positioning unit;
300-a debonding unit; 310-separating the base; 320-a laser emitting mechanism; 330-a split rotation mechanism; 340-a bracket; 331-a base; 332-an adsorption assembly; 341-separation space; 3311—a through hole; 3321-suction nozzle; 3322—a ram; 3323—linear drive;
400-wafer cleaning unit;
500-a transfer unit; 510-a mechanical arm;
600-a substrate to be de-bonded; 610-wafer; 620-carrier plate; 630-bonding glue; 640-polymer film;
700-plasma cleaning unit; 800-laser circular cutting unit.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Some embodiments of the present invention are described in detail below with reference to the accompanying drawings. The following embodiments and features of the embodiments may be combined with each other without conflict.
In the prior art, after the bonding is released, residual glue is remained on the wafer, and the residual glue on the supporting plate easily contaminates the mechanical arm and causes the supporting plate to be subjected to secondary pollution.
In view of this, the present invention provides a debonding cleaning apparatus, referring to fig. 1 to 5, including a loading and unloading unit 100, a wafer positioning unit 200, a debonding unit 300, a wafer cleaning unit 400, and a transfer unit 500; the loading and unloading unit 100 is used for inputting the substrate 600 to be de-bonded, outputting the wafer 610 after de-bonding and the carrier 620; the wafer positioning unit 200 is used for centering and positioning the substrate 600 to be Jie Jian combined; the debonding unit 300 includes a separation base 310, a laser emitting mechanism 320, and a separation rotating mechanism 330, wherein the separation base 310 is used for fixing a substrate 600 to be debonded, the laser emitting mechanism 320 is used for emitting laser to the substrate 600 to be debonded, and the separation rotating mechanism 330 is used for fixing a carrier 620 and driving the carrier 620 to turn around a horizontal line; the wafer cleaning unit 400 is used for cleaning a wafer 610; the transfer unit 500 includes at least one mechanical arm 510, where the mechanical arm 510 is used to transfer and discharge the substrate 600 to be de-bonded, the wafer 610, and the carrier 620.
In the debonding cleaning apparatus, the connection between the wafer 610 and the carrier 620 may be released by the debonding unit 300; through the wafer cleaning unit 400, the residual glue on the surface of the wafer 610 can be cleaned; by separating the rotating mechanism 330, the carrier 620 can be driven to turn over, so that the clean surface of the carrier 620 faces downward and the residual adhesive surface faces upward, and thus, the mechanical arm 510 can move to the clean surface of the carrier 620 to grab or adsorb the carrier 620, thereby avoiding secondary pollution of the carrier 620.
Therefore, the wafer 610 after the debonding can be cleaned by adopting the debonding cleaning device, the cleaning of the mechanical arm 510 is ensured when the carrier 620 is conveyed, the carrier 620 is prevented from being polluted by secondary pollution, and the cleaning workload is reduced.
The structure and shape of the debonding cleaning apparatus provided in this embodiment are described in detail below with reference to fig. 1 to 7:
regarding the debonding unit 300, specifically:
referring to fig. 4, the de-bonding unit 300 further includes a bracket 340 and a lifting driving mechanism; the bracket 340 is provided with a separation space 341; the separation base 310 is located under the separation rotation mechanism 330, and is used for adsorbing and fixing the wafer 610, and the separation base 310 and the laser emission mechanism 320 are both located in the separation space 341 and are respectively located at the bottom and the top of the bracket 340; the lifting driving mechanism is used for separating the carrier 620 from the wafer 610, and preferably, the lifting driving mechanism is in transmission connection with the separating rotating mechanism 330 to drive the separating rotating mechanism 330 to move up and down, and in addition, the lifting driving mechanism may be selectively in transmission connection with the separating base 310 to drive the separating base 310 to move up and down.
Further, referring to fig. 4 and 5, the separation rotation mechanism 330 includes a base 331, an adsorption assembly 332, and a rotation driving assembly; the base 331 is located directly under the laser emission mechanism 320, and has a first end and a second end with opposite directions, and from the first end to the second end, the base 331 is provided with a through hole 3311 penetrating through itself, and the through hole 3311 is used for passing the laser emitted by the laser emission mechanism 320; the adsorption component 332 is disposed on the base 331 for adsorbing the carrier 620 to the first end or releasing the carrier 620; the rotation driving assembly is in transmission connection with the base 331 to drive the base 331 to rotate, and the rotation axis is perpendicular to the axis of the through hole 3311.
Specifically, as shown in fig. 4 and 5, the separation base 310 is fixed to the bracket 340, and the lifting driving mechanism includes an electric cylinder, and the electric cylinder can drive the separation rotating mechanism 330 to move downward or upward when activated. In the case of the debonding, first, the laser emitting mechanism 320 emits the laser downward, and the substrate 600 to be debonded is irradiated with the laser, so that the carrier 620 is disconnected from the wafer 610; next, the separation and rotation mechanism 330 is lowered to contact with the carrier 620 under the driving of the electric cylinder, and the adsorption component 332 adsorbs the carrier 620; then the electric cylinder drives the separation rotating mechanism 330 to slowly move upwards to separate the carrier 620 from the wafer 610, and after the carrier 620 moves upwards to a preset position, the rotating driving assembly drives the base 331 to turn over 180 degrees to enable the clean surface of the carrier 620 to face downwards and the residual adhesive surface to face upwards; finally, the adsorption assembly 332 releases the carrier 620, and the mechanical arm 510 moves between the base 331 and the carrier 620, and transfers the carrier 620 to the loading and unloading unit 100 after adsorbing the carrier 620.
Further, referring to fig. 5, the through hole 3311 is circular; the suction assembly 332 includes a plurality of suction nozzles 3321, and the plurality of suction nozzles 3321 are disposed at a first end at intervals around the axis of the through hole 3311. Here, the circular through hole 3311 may avoid the influence on the laser irradiation light path, ensuring the effectiveness of the laser irradiation; the plurality of suction nozzles 3321 are disposed at the first end around a circle, so as to effectively adsorb the carrier 620 and prevent the carrier 620 from being separated from the base 331 during the moving process.
Further, with continued reference to fig. 5, the suction assembly 332 further includes a telescoping member configured to move the output end thereof above the suction nozzles 3321 to jack up the carrier plate 620 during a transfer condition. By adopting the design, the mechanical arm 510 can conveniently move between the base 331 and the carrier 620, so that the mechanical arm 510 can complete the adsorption transfer of the carrier 620.
In one embodiment of the present application, as shown in fig. 5, the telescoping member includes a ram 3322 and a linear actuator 3323; the plurality of ejector rods 3322 are distributed at intervals around the axis of the through hole 3311 and are connected with the base 331 in a sliding manner; the linear driver 3323 is in driving connection with the ejector rod 3322 to drive the ejector rod 3322 to slide along the axial direction of the through hole 3311.
Specifically, the linear driver 3323 may use an air cylinder, and along with the action of the piston rod of the air cylinder, the ejector rod 3322 may move synchronously, and the free end of the ejector rod 3322 may exceed the suction nozzle 3321, so as to eject the carrier 620 away from the suction nozzle 3321, so that the mechanical arm 510 can perform the action conveniently; the free end may be flush with the suction nozzle 3321 or lower than the suction nozzle 3321, so that the suction nozzle 3321 can effectively adsorb the carrier plate 620.
In other embodiments, the telescopic member is an electric telescopic rod, which can also achieve the above functions, and will not be described in detail here.
Further, referring to fig. 1 to 3, the loading and unloading unit 100 includes a loading and unloading magazine 110 and a carrier plate unloading magazine 120; the loading and unloading magazine 110 is used for loading the substrate 600 to be de-bonded and unloading the wafer 610; the carrier plate blanking box 120 is used for blanking the carrier plate 620.
Alternatively, taking fig. 1 as an example, two loading and unloading boxes 110 are provided, one for loading the wafer substrate with the iron ring and unloading the wafer with the iron ring, and the other for loading the standard wafer substrate or the warpage wafer substrate and unloading the wafer 610 or the warpage wafer. The carrier plate blanking box 120 is used for blanking the carrier plate 620 after the bonding is released.
It should be added here that, optionally, the transfer unit 500 includes two mechanical arms 510, where one mechanical arm 510 is used for feeding and discharging the wafer with an iron ring, and the other mechanical arm 510 is used for feeding and discharging the carrier plate 620 after de-bonding the standard wafer substrate or the warped wafer substrate.
Further, the debonding cleaning apparatus further includes a plasma cleaning unit 700 and/or a laser ring cutting unit 800; the plasma cleaning unit 700 is used for cleaning the wafer 610; the laser ring cutting unit 800 is used for ring cutting the edge of the substrate 600 to be Jie Jian.
As shown in fig. 6 and 7, the substrate 600 to be debonded includes a wafer 610, a carrier 620, a bonding adhesive 630, and a polymer film 640; the polymer film 640 is exemplified by PI polyimide (polyimide), and a layer of PI polyimide is coated on the wafer 610 to strengthen the passivation layer of the chip, so as to play a role of stress buffering; bonding glue 630 is adopted between the polymer film 640 and the carrier plate 620 for adhesion, and bonding glue 630 is adopted for bonding glue 630 by laser bonding, so that the viscosity of the bonding glue 630 can be changed by means of laser and the like after the process is completed.
Considering that the polymer thin film 640 such as carbon ash photolyzed by PI polyimide is densely covered on the surface of the residual glue due to the instantaneous high temperature effect at the time of the deblocking, the cleaning agent is difficult to enter the inside of the residual glue, and the residual stripping material may adhere to the surface of the wafer 610 during the cleaning process to contaminate the wafer 610, in this case, referring to fig. 2, the deblocking cleaning apparatus further includes a plasma cleaning unit 700. The residual polymer film 640 may be washed away by the plasma washing unit 700, so that the wafer washing unit 400 can dissolve the bonding glue 630 on the wafer 610.
Considering that the bonded wafer 610 generally involves an acid, alkali, vacuum, and high and low temperature environment during the subsequent process, the environment may cause the temporary bonding glue 630 in the peripheral portion of the wafer 610 to be denatured, or the temporary bonding glue 630 is extruded to the sides of the carrier 620 and the wafer 610 due to heating and extrusion during the bonding process, so that glue residues are formed, which may cause that the carrier 620 cannot be smoothly separated from the wafer 610 during the debonding process of the wafer 610 and the carrier 620, and fragments are easily caused, and in this case, referring to fig. 3, the debonding cleaning apparatus further includes a laser circular cutting unit 800. The laser dicing unit 800 performs dicing on the edge of the substrate 600 to be debonded, and removes the residual adhesive on the edge to form a wafer 610 with a standard size, and then performs centering and positioning.
In view of the above two cases, the debonding cleaning apparatus further includes a plasma cleaning unit 700 and a laser ring cutting unit 800. The smooth progress of the debonding can be ensured by the plasma cleaning unit 700 and the laser ring cutting unit 800.
The invention also provides a method for de-bonding cleaning, which is based on de-bonding cleaning equipment and comprises the following steps:
s100: the mechanical arm 510 takes the substrate 600 to be de-bonded from the loading and unloading magazine 110 and places the substrate in the wafer positioning unit 200; s200: the wafer positioning unit 200 performs centering positioning on the substrate 600 to be debonded; s300: the mechanical arm 510 places the positioned substrate 600 to be de-bonded on the separation base 310, and the separation base 310 holds or adsorbs the wafer 610 at the bottom of the substrate 600 to be de-bonded; s400: the laser emitting mechanism 320 irradiates laser to the substrate 600 to be debonded, and debonds; s500: the lifting driving mechanism drives the separating and rotating mechanism 330 to move above the substrate 600 to be separated, and enables the separating and rotating mechanism 330 to descend to a preset position, then the adsorption component 332 adsorbs and fixes the carrier 620, and then the separating and rotating mechanism 330 moves upwards, so that the carrier 620 is separated from the wafer 610; s600: the mechanical arm 510 transfers the wafer 610 after the debonding from the separation base 310 to the wafer cleaning unit 400 to clean the wafer 610; s700: the rotary driving assembly drives the base 331 to turn 180 degrees so that the unbinding surface of the carrier 620 faces upwards; s800: the mechanical arm 510 extends between the base 331 and the carrier 620, grabs or adsorbs the carrier 620 from the back of the carrier 620, and after the adsorption component 332 releases the adsorption to the back of the carrier 620, the mechanical arm 510 places the carrier 620 in the carrier blanking box 120; s900: the robot 510 places the cleaned wafer 610 into the upper and lower cassettes 110.
Through the steps, the wafer 610 after the bonding and the carrier 620 can be cleaned, so that the mechanical arm 510 is prevented from being polluted, and the cleaning of the wafer 610 and the material box is ensured.
Further, after the debonding, the robot 510 transfers the wafer 610 to the plasma cleaning unit 700, and after the cleaning, to the wafer cleaning unit 400. Here, the wafer 610 is cleaned by the plasma cleaning unit 700 to clean the residual polymer film 640, and then the bonding glue 630 on the wafer 610 is dissolved by the wafer cleaning unit 400, so that the wafer 610 is prevented from being polluted by the residual polymer film 640.
Further, before centering, the mechanical arm 510 transfers the substrate 600 to be debonded to the laser dicing unit 800, and after edge dicing, transfers the substrate to the wafer positioning unit 200. Here, the edge of the substrate 600 to be debonded is first subjected to dicing, and the edge residual glue is removed, so that the wafer 610 with standard size is formed, and debonded is easy and not easy to be broken.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.

Claims (8)

1. A debonding cleaning apparatus, comprising: the wafer cleaning device comprises a loading and unloading unit (100), a wafer positioning unit (200), a de-bonding unit (300), a wafer cleaning unit (400) and a conveying unit (500);
the loading and unloading unit (100) is used for inputting a substrate (600) to be de-bonded, outputting a wafer (610) after de-bonding and a carrier plate (620);
the wafer positioning unit (200) is used for centering and positioning a substrate (600) to be unbonded;
the debonding unit (300) comprises a separation base (310), a laser emission mechanism (320) and a separation rotating mechanism (330), wherein the separation base (310) is used for fixing a substrate (600) to be debonded, the laser emission mechanism (320) is used for emitting laser to the substrate (600) to be debonded, and the separation rotating mechanism (330) is used for fixing a carrier plate (620) and driving the carrier plate (620) to overturn around a horizontal line;
the wafer cleaning unit (400) is used for cleaning a wafer (610);
the conveying unit (500) comprises at least one mechanical arm (510), wherein the mechanical arm (510) is used for conveying a substrate (600) to be de-bonded, conveying and blanking a wafer (610) and blanking a carrier plate (620);
the separation and rotation mechanism (330) comprises a base (331), an adsorption component (332) and a rotation driving component;
the base (331) is located right below the laser emission mechanism (320) and provided with a first end and a second end which are opposite in direction, and from the first end to the second end, the base (331) is provided with a through hole (3311) penetrating through the base, and the through hole (3311) is used for allowing laser emitted by the laser emission mechanism (320) to pass through;
the adsorption component (332) is arranged on the base (331) and is used for adsorbing the carrier plate (620) to the first end or loosening the carrier plate (620);
the rotary driving component is in transmission connection with the base (331) so as to drive the base (331) to rotate, and the rotation axis is perpendicular to the axis of the through hole (3311);
the through hole (3311) is circular;
the suction assembly (332) comprises a plurality of suction nozzles (3321), and the suction nozzles (3321) are arranged at the first end at intervals around the axis of the through hole (3311).
2. The debonding cleaning apparatus of claim 1, wherein the adsorption assembly (332) further comprises a ram (3322) and a linear drive (3323);
the ejector rods (3322) are distributed at intervals around the axis of the through hole (3311) and are in sliding connection with the base (331);
the linear driver (3323) is in transmission connection with the ejector rod (3322) so as to drive the ejector rod (3322) to slide along the axial direction of the through hole (3311).
3. The debonding cleaning apparatus of claim 1, wherein the debonding unit (300) further comprises a lift drive mechanism;
the lifting driving mechanism is in transmission connection with the separation rotating mechanism (330) to drive the separation rotating mechanism (330) to move towards or away from the separation base (310).
4. The debonding cleaning apparatus of claim 1, wherein the loading and unloading unit (100) comprises an loading and unloading magazine (110) and a carrier plate unloading magazine (120);
the upper and lower material boxes (110) are used for feeding the substrate (600) to be de-bonded and discharging the wafer (610);
the carrier plate blanking box (120) is used for blanking the carrier plate (620).
5. The debonding cleaning apparatus of any of claims 1 to 4, further comprising a plasma cleaning unit (700) and/or a laser ring cutting unit (800);
the plasma cleaning unit (700) is used for cleaning a wafer (610);
the laser circular cutting unit (800) is used for circular cutting the edge of the substrate (600) to be bonded.
6. A debonding cleaning method based on the debonding cleaning apparatus of any of claims 1 to 5, comprising the steps of:
s100: the mechanical arm (510) takes the substrate (600) to be de-bonded from the feeding and discharging material box (110) and is placed in the wafer positioning unit (200);
s200: the wafer positioning unit (200) performs centering positioning on the substrate (600) to be Jie Jian combined;
s300: the mechanical arm (510) places the positioned substrate (600) to be de-bonded on the separation base (310), and the separation base (310) clamps or adsorbs the wafer (610) at the bottom of the substrate (600) to be de-bonded;
s400: the laser emitting mechanism (320) irradiates laser to the substrate (600) to be bonded for bonding;
s500: the lifting driving mechanism drives the separating and rotating mechanism (330) to move to the position above the substrate (600) to be de-bonded, the separating and rotating mechanism (330) is lowered to a preset position, then the adsorption component (332) adsorbs and fixes the carrier plate (620), and then the separating and rotating mechanism (330) moves upwards, so that the carrier plate (620) is separated from the wafer (610);
s600: the mechanical arm (510) conveys the wafer (610) after the bonding is separated from the separating base (310) to the wafer cleaning unit (400) to clean the wafer (610);
s700: the rotary driving assembly drives the base (331) to turn over 180 degrees, so that the unbinding surface of the carrier plate (620) faces upwards;
s800: the mechanical arm (510) stretches into the space between the base (331) and the carrier plate (620), the carrier plate (620) is grabbed or adsorbed from the back surface of the carrier plate (620), and after the adsorption component (332) releases the adsorption to the back surface of the carrier plate (620), the mechanical arm (510) places the carrier plate (620) in the carrier plate blanking box (120);
s900: the robot arm (510) places the cleaned wafer (610) in the loading and unloading magazine (110).
7. The method of claim 6, wherein the robot (510) transfers the wafer (610) to the plasma cleaning unit (700) after the debonding, and transfers the wafer to the wafer cleaning unit (400) after the cleaning.
8. The method of claim 6, wherein the mechanical arm (510) transfers the substrate (600) to be debonded to the laser dicing unit (800) before centering and transferring the substrate to the wafer positioning unit (200) after edge dicing is completed.
CN202311249676.XA 2023-09-26 2023-09-26 Debonding cleaning device and debonding cleaning method Active CN116995000B (en)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080090639A (en) * 2007-04-05 2008-10-09 주식회사 에스에프에이 System for laser cutting and method for laser cutting
KR20120046957A (en) * 2010-11-03 2012-05-11 (주)큐엠씨 Laser processing device and laser processing method using the same
CN107195577A (en) * 2017-05-08 2017-09-22 深圳市华星光电技术有限公司 Substrate turnover device and its method for departing from substrate
CN112967993A (en) * 2021-02-02 2021-06-15 深圳市化讯半导体材料有限公司 Wafer bonding-releasing method
CN217062028U (en) * 2022-03-28 2022-07-26 重庆康佳光电技术研究院有限公司 Huge transfer device
CN217426688U (en) * 2022-05-27 2022-09-13 弘塑科技股份有限公司 Integrated wafer debonding and cleaning equipment
CN219040423U (en) * 2022-12-26 2023-05-16 允哲半导体科技(浙江)有限公司 Wafer bonding and cleaning integrated machine
CN116344406A (en) * 2023-04-13 2023-06-27 沈阳芯源微电子设备股份有限公司 Bonded wafer separating system and control method thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080090639A (en) * 2007-04-05 2008-10-09 주식회사 에스에프에이 System for laser cutting and method for laser cutting
KR20120046957A (en) * 2010-11-03 2012-05-11 (주)큐엠씨 Laser processing device and laser processing method using the same
CN107195577A (en) * 2017-05-08 2017-09-22 深圳市华星光电技术有限公司 Substrate turnover device and its method for departing from substrate
CN112967993A (en) * 2021-02-02 2021-06-15 深圳市化讯半导体材料有限公司 Wafer bonding-releasing method
CN217062028U (en) * 2022-03-28 2022-07-26 重庆康佳光电技术研究院有限公司 Huge transfer device
CN217426688U (en) * 2022-05-27 2022-09-13 弘塑科技股份有限公司 Integrated wafer debonding and cleaning equipment
CN219040423U (en) * 2022-12-26 2023-05-16 允哲半导体科技(浙江)有限公司 Wafer bonding and cleaning integrated machine
CN116344406A (en) * 2023-04-13 2023-06-27 沈阳芯源微电子设备股份有限公司 Bonded wafer separating system and control method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
解决高级半导体封装应用难题的临时接合技术发展;Ramachandran K.Trichur;Tony D.Flaim;;电子工业专用设备(01);第33-39页 *

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