CN113851395A - Laser dissociation bonding gas discharge device and method - Google Patents
Laser dissociation bonding gas discharge device and method Download PDFInfo
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- CN113851395A CN113851395A CN202111035718.0A CN202111035718A CN113851395A CN 113851395 A CN113851395 A CN 113851395A CN 202111035718 A CN202111035718 A CN 202111035718A CN 113851395 A CN113851395 A CN 113851395A
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- 238000010494 dissociation reaction Methods 0.000 title description 2
- 230000005593 dissociations Effects 0.000 title description 2
- 238000000926 separation method Methods 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 43
- 230000005540 biological transmission Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
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- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000001179 sorption measurement Methods 0.000 claims description 5
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- 238000007599 discharging Methods 0.000 description 5
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Abstract
The invention provides a laser de-bonding gas discharge device, comprising: the bottom of the debonding cavity is provided with a bearing area, and the bearing area is used for bearing the bonding structure in the debonding process; the air curtain generation module is communicated with the bonding-off cavity through an air curtain generation port and can send an air curtain to the bonding structure through the air curtain generation port so as to cover the bonding structure; and the gas discharge module is communicated with the debonding cavity through a discharge air channel on an air curtain path, so that the gas of the air curtain is discharged into the gas discharge module along the discharge air channel. The invention can simultaneously cover the bonding structure by adopting the gas curtain in the bonding process, and simultaneously, the gas is discharged by adopting the gas discharge module, thereby avoiding the pollution to the gas after the phase change of the bonding glue.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a laser bonding-debonding gas discharge device and a laser bonding-debonding gas discharge method.
Background
In the field of semiconductor manufacturing, thinning of the thickness of a single semiconductor wafer is often required, so that the back surface of the semiconductor wafer with the thickness is thinned (grinding and cutting) after loading the integrated circuits, while in the processing, the semiconductor wafer is usually temporarily bonded (Temporary Bonding) by using a substrate, and the substrate is used as the base of the semiconductor wafer in the processing, so as to protect the semiconductor wafer from being damaged due to the thinning in the processing, and after the semiconductor wafer is thinned, the semiconductor wafer and the substrate are bonded (DeBonding) again.
In the process of implementing the invention, the inventor finds that at least the following technical problems exist in the prior art: in the process of bonding and debonding a semiconductor wafer and a substrate, since the bonding paste is subjected to phase change, the bonding paste is easily dissipated into the air, thereby causing air pollution.
Disclosure of Invention
The laser bonding-debonding gas discharge device and the laser bonding-debonding gas discharge method provided by the invention can simultaneously cover the bonding structure by adopting the gas curtain in the bonding debonding process, and simultaneously discharge by adopting the gas discharge module, so that the pollution to gas after the phase change of the bonding glue is avoided.
In a first aspect, the present invention provides a laser debonding gas exhaust apparatus comprising:
the bottom of the debonding cavity is provided with a bearing area, and the bearing area is used for bearing the bonding structure in the debonding process;
the air curtain generation module is communicated with the bonding-off cavity through an air curtain generation port and can send an air curtain to the bonding structure through the air curtain generation port so as to cover the bonding structure;
and the gas discharge module is communicated with the debonding cavity through a discharge air channel on an air curtain path, so that the gas of the air curtain is discharged into the gas discharge module along the discharge air channel.
Optionally, a dimension of the gas inlet of the exhaust gas passage in the vertical direction is larger than a dimension of the gas curtain generation port in the vertical direction.
Optionally, the gas inlet of the exhaust gas channel is lower than the gas outlet, and the exhaust gas channel is arranged from the gas inlet to the gas outlet in an inclined upward manner.
Optionally, the gas discharge module comprises:
the air suction cavity is communicated with the bonding release cavity through an exhaust air passage;
and the air exhaust pump is communicated with the air suction cavity and is used for exhausting air from the air suction cavity.
In a second aspect, the present invention provides a laser debonding gas exhaust method performed on the laser debonding exhaust apparatus described in any one of the above, the method comprising:
controlling the air curtain generation module and the air discharge module to work to form an air curtain covering the bonding structure;
sequentially performing local bonding removal operation on a plurality of separation regions of the bonding structure; wherein the local debonding operation includes performing laser irradiation on a current separation region of the bonding structure to cause a phase change of a bonding substance in the current region; applying force to the current separation area to separate the substrate and the wafer corresponding to the current separation area of the bonding structure;
and when the last separation area of the bonding structure completes the local bonding removing operation, controlling the gas curtain generation module and the gas discharge module to stop working.
Optionally, the discharge flow rate of the gas discharge module is greater than the flow rate of the gas curtain emitted by the gas curtain generation module.
Optionally, the local debonding operation includes:
adsorbing a transparent sucker and a bonding structure, wherein the transparent sucker is provided with a plurality of force application pull rods;
performing laser irradiation on the current separation area of the bonding structure through the transparent sucker to enable the phase of the bonding substance in the current area to be changed;
and applying force to the current separation area by adopting a force application pull rod corresponding to the current separation area so as to separate the substrate and the wafer in the current separation area of the bonding structure.
Optionally, applying a force to the current separation area by using a force application pull rod corresponding to the current separation area includes:
increasing the adsorption force of the transparent sucker and the bonding structure in the current separation area from a first preset value to a second preset value;
and applying a pulling force smaller than a second preset value by using the force application pull rod corresponding to the current separation area.
Optionally, the laser irradiating the currently separated region of the bonding structure through the transparent suction cup includes:
determining a first transmission laser wavelength corresponding to the transparent sucker according to the material of the transparent sucker;
determining a second transmission laser wavelength corresponding to the substrate according to the material of the substrate in the bonding structure;
determining available laser wavelength according to the first transmission laser wavelength and the second transmission laser wavelength;
laser irradiation of the currently detached area of the bonded structure with a laser having a wavelength in the range of the available laser wavelengths.
Optionally, the laser irradiation of the current separation region of the bonding structure through the transparent suction cup to make the phase change of the bonding substance of the current region includes:
and irradiating the current separation area of the bonding structure with laser through the transparent sucker so as to change the bonding material in the current area into a gas state or a plasma state.
In the technical scheme provided by the invention, in the using process, the transparent sucker is adsorbed on the substrate, the laser generator is used for locally irradiating the bonding structure, after irradiation is finished, force application separation is carried out on the local part through the transparent sucker, and after irradiation and force application separation are completely finished on all the local parts of the bonding structure, the separation of the bonding structure is finished. According to the technical scheme, the irradiation is carried out on the part, then the force application separation process is carried out, the irradiation time and the separation time are short, so that the gas curtain can cover the irradiated and unseparated part for a long time, a large amount of heat loss of the irradiated and unseparated part can not be caused, and the gas curtain can discharge the phase-changed bonding adhesive and can not influence the separation effect of the semiconductor wafer and the substrate due to the existence of the gas curtain.
Drawings
FIG. 1 is a schematic structural view of a laser debonding gas exhaust apparatus according to an embodiment of the present invention;
FIG. 2 is a flow chart of a laser de-bonding gas venting method according to another embodiment of the present invention;
FIG. 3 is a flow chart illustrating the separation of a substrate from a wafer in a laser de-bonding gas exhaust method according to another embodiment of the present invention;
fig. 4 is a flowchart of laser irradiation in a laser debinding gas discharging method according to another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a laser de-bonding gas discharge apparatus, as shown in fig. 1, including:
a debonding chamber 100 having a carrying region at the bottom for carrying the bonding structure 400 during the debonding process;
in some embodiments, the debonding chamber 100 is used to accommodate the bonding structure 400, during the debonding process, a transparent suction cup is attached to the substrate, the laser generated by the laser generator irradiates on the bonding glue through the transparent suction cup and the substrate, and after the local irradiation is completed, the transparent suction cup is used to apply a force to the substrate, so as to separate the irradiated areas.
The air curtain generation module 200 is communicated with the debonding bonding cavity 100 through an air curtain generation port 210, and the air curtain generation module 200 can emit an air curtain to the bonding structure 400 through the air curtain generation port 210 so as to cover the bonding structure 400;
in some embodiments, the air curtain generation module 200 is configured to generate compressed air, for example, the compressed air may have a pressure of 0.5 mpa to 0.8 mpa. The compressed air escapes through the air curtain generating port 210 to the outside, and an air curtain is formed at the air curtain generating port 210 due to the presence of the air pressure, thereby covering the bonding structure 400. The gas curtain blows out the phase-changed bonding glue along the gas flowing direction, so that the gas-state or plasma-state bonding glue is prevented from being dispersed into the air to cause pollution. Meanwhile, the gas curtain can also quickly blow out the phase-changed bonding glue along the gas flowing direction, so that the phenomenon that the phase-changed bonding glue is gathered around the wafer to cause the pollution of the wafer is avoided.
And a gas discharge module, which is communicated with the debonding cavity 100 through a discharge gas channel 310 on a gas curtain path, so that the gas of the gas curtain is discharged into the gas discharge module along the discharge gas channel 310.
In some embodiments, the gas discharge module discharges gas, and the discharge air passage 310 is disposed on the air curtain path, so as to ensure that the direction of the air curtain is from the air curtain generating port 210 to the discharge air passage 310. Meanwhile, the discharge flow of the gas discharge module is 200-350m3Per hour; the negative pressure can be generated in the debonding cavity 100 by discharging at the discharge flow rate, so that the gas in the debonding cavity 100 is discharged through the discharge gas channel 310, and a discharge path of the bonding glue in a gas state or a plasma state is ensured.
In the technical solution provided in this embodiment, in the using process, the transparent suction cup is attached to the substrate, the laser generator is used to perform local irradiation on the bonding structure 400, after the irradiation is completed, the transparent suction cup applies force to the local part for separation, and when the irradiation and the force application separation are completed on all the local parts of the bonding structure 400, the separation of the bonding structure 400 is completed. According to the technical scheme of the embodiment, the irradiation is performed locally, then the force application separation process is performed, and the irradiation time and the separation time are short, so that the gas curtain covers the irradiated and unseparated part for a long time, and a large amount of heat loss of the irradiated and unseparated part is avoided, so that the gas curtain can discharge the phase-changed bonding adhesive, and the separation effect of the semiconductor wafer and the substrate is not influenced by the existence of the gas curtain.
As an alternative embodiment, the size of the gas inlet of the exhaust gas passage 310 in the vertical direction is larger than the size of the gas curtain generation port 210 in the vertical direction.
In some embodiments, the thickness of the air curtain increases with distance from the air curtain generating opening 210, since the air forming the air curtain must escape during movement. In order to ensure the discharge of the gas curtain, the gas inlet of the discharge air passage 310 is disposed to be large in the vertical direction in the present embodiment, so that the discharge air passage 310 can cover the thickness of the end of the gas curtain.
As an alternative embodiment, the gas inlet of the exhaust duct 310 is lower than the gas outlet, and the exhaust duct 310 is disposed from the gas inlet to the gas outlet in an inclined manner.
In some embodiments, the exhaust duct 310 is disposed obliquely upward, so that light particles can be discharged more smoothly, and the discharge effect can be improved.
As an alternative embodiment, the gas discharge module comprises:
a suction chamber 320 in communication with the debonding chamber 100 via an exhaust air channel 310;
in some embodiments, the suction chamber 320 can equalize the discharge pressure provided by the discharge pump, so that the negative pressure of the discharge air path 310 is uniform, thereby preventing the air curtain from being disturbed due to the non-uniform pressure of the discharge air path 310. Therefore, the air curtain is ensured to be a continuous, uniform and stable air curtain, and the shielding of the bonding glue after phase change can be ensured.
And an air exhaust pump communicated with the air suction cavity 320 for exhausting air from the air suction cavity 320.
In some embodiments, the air exhaust pump is a device for providing negative pressure to exhaust air in the air suction cavity 320, so that the air suction cavity 320 is always in a negative pressure state.
In the embodiment, the negative pressure of the exhaust pump is homogenized through the air suction cavity 320, so that the continuity and stability of the air curtain are ensured, and the shielding effect of the bonding glue after phase change is improved.
An embodiment of the present invention further provides a laser debonding gas discharging method, as shown in fig. 2, implemented in any one of the above laser debonding discharging apparatuses, where the method includes:
in some embodiments, before the bonding is started, the air curtain generation module and the air discharge module are controlled to work firstly, so that the bonding structure is covered in the stable air curtain firstly, and the subsequent shielding and discharging of the bonding glue after the phase change are facilitated.
in some embodiments, the bonding structure is divided into a plurality of separation areas, and local bonding-removing operation is performed on each separation area, so that laser irradiation and separation on the separation area can be completed in a very short time, and heat loss of the irradiated and not-yet-separated area due to the existence of the air curtain is avoided. Therefore, the situation that the separation effect is poor due to the fact that the air curtain takes away heat is avoided.
In some embodiments, after the local debonding operation is performed on the last detached area of the bonded structure, it is indicated that the current bonded structure has been fully debonded. The air curtain generation module and the air discharge module can be controlled to stop working at the moment. To ensure that the phase-changed bonding paste is discharged, the air curtain may be maintained for a period of time after completion and then stopped.
In the technical scheme provided by this embodiment, in the using process, the transparent sucker is attached to the substrate, the laser generator is used to perform local irradiation on the bonding structure, after irradiation is completed, the transparent sucker applies force to the local part for separation, and after irradiation and force application separation are completed on all the local parts of the bonding structure, separation of the bonding structure is completed. According to the technical scheme of the embodiment, the irradiation is performed locally, then the force application separation process is performed, and the irradiation time and the separation time are short, so that the gas curtain covers the irradiated and unseparated part for a long time, and a large amount of heat loss of the irradiated and unseparated part is avoided, so that the gas curtain can discharge the phase-changed bonding adhesive, and the separation effect of the semiconductor wafer and the substrate is not influenced by the existence of the gas curtain.
As an alternative embodiment, the discharge flow rate of the gas discharge module is greater than the flow rate of the air curtain emitted by the air curtain generation module.
In some embodiments, when the discharge flow of the gas discharge module is greater than the flow of the gas curtain emitted by the gas curtain generation module, the gas discharged by the gas discharge module sucks a part of gas from the inlet of the debonding cavity in addition to the gas of the gas curtain, so that a gas flow flowing downwards from the top inlet exists in the debonding cavity, and the bonding glue in a gas state or a plasma state cannot escape outwards.
As an alternative embodiment, as shown in fig. 3, the partial debonding operation in step 9200 includes:
in some embodiments, multiple force applying rods of the transparent suction cup can be used to apply force to different regions of the transparent suction cup, i.e., force can be applied to different regions of the substrate by different force applying rods.
Step 9220, performing laser irradiation on the current separation region of the bonding structure through the transparent sucker to change the phase of the bonding substance in the current region;
in some embodiments, the transparent chuck is used to adsorb the substrate before bonding starts, the laser irradiates the bonding glue through the transparent chuck, and the substrate can be applied with force through the force application pull rod after irradiation. In the whole process, the step of applying force and separating is executed after the irradiation is finished. Therefore, the transparent sucker is adopted to adsorb the substrate, and the laser is irradiated through the transparent sucker, so that the separation efficiency is improved, and less heat loss is facilitated.
In some embodiments, the force is applied to the chuck by a force applying pull rod, and the chuck is attracted to the substrate to transfer the pulling force to the substrate, thereby separating the substrate from the wafer.
In the embodiment, the transparent sucker is adopted to adsorb the substrate, and then the laser is irradiated through the transparent sucker, so that the working efficiency can be improved, the heat loss is reduced, and the good separation effect on the substrate and the wafer is facilitated.
As an alternative embodiment, in step 9230, applying a force to the current separation area by using a force application pull rod corresponding to the current separation area includes:
step 9231, increasing the adsorption force of the transparent sucker and the bonding structure in the current separation area from a first preset value to a second preset value;
in some embodiments, the first predetermined value may be less than the suction force provided when the exhaust duct of the transparent suction cup is not fully opened, for example, the suction force provided when the exhaust duct is 30% or 50% open. The second predetermined value may be an adsorption force greater than the first predetermined value, and may be, for example, an adsorption force provided when the exhaust pipe is 80% or 100% open.
Step 9232, apply a tension force less than a second predetermined value using the force application pull rod corresponding to the current separation region.
In some embodiments, in order for the chuck to conduct the pulling force of the force application pull rod to the substrate, it is desirable to ensure that the applied pulling force is less than a second predetermined value to avoid separating the chuck from the substrate when the pulling force is applied, thereby resulting in a failure to apply the pulling force to the substrate.
As an alternative embodiment, as shown in fig. 4, the step 9220 of laser irradiating the currently separated region of the bonding structure through the transparent suction cup includes:
step 9221, determining a first transmission laser wavelength corresponding to the transparent sucker according to the material of the transparent sucker;
in some embodiments, for a transparent chuck, the intrinsic absorption edge can be calculated according to the following equation:
wherein E isgForbidden band width, lambda, of the material of the transparent suction cupcIs the intrinsic absorption edge of the transparent chuck.
Depending on the intrinsic absorption edge of the transparent chuck, a first transmission wavelength that the transparent chuck is capable of transmitting through can be determined.
in some embodiments, the laser wavelength that the substrate is capable of transmitting can be determined based on the same calculation principles in step 9221.
in some embodiments, since the laser illumination of the bonding paste needs to pass through the transparent chuck and the substrate, the first and second transmission wavelengths need to be intersected to determine the available laser wavelength.
In some embodiments, the bonding paste may be manufactured through the transparent chuck and the substrate when the wavelength is within the available laser wavelength range, so that the separation region is irradiated with the corresponding laser in this step to cause the phase change of the bonding paste in the current separation region.
As an alternative embodiment, the laser irradiation of the current separation region of the bonding structure through the transparent chuck to phase-change the bonding substance of the current region includes:
and irradiating the current separation area of the bonding structure with laser through the transparent sucker so as to change the bonding material in the current area into a gas state or a plasma state.
In some embodiments, the bonding material is a bonding paste, the bonding paste is irradiated to change the state of the bonding paste into a gaseous state or a plasma state, the substrate and the semiconductor wafer are not bonded, and the wafer and the substrate can be separated by applying force. Meanwhile, the bonding glue in gas and plasma states is more beneficial to being discharged outwards along with the gas curtain, the pollution to the wafer can be reduced, and the pollution to the air can also be reduced.
It will be understood by those skilled in the art that all or part of the processes of the embodiments of the methods described above may be implemented by a computer program, which may be stored in a computer-readable storage medium, and when executed, may include the processes of the embodiments of the methods described above. The storage medium may be a magnetic disk, an optical disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), or the like.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A laser debonding gas exhaust apparatus, comprising:
the bottom of the debonding cavity is provided with a bearing area, and the bearing area is used for bearing the bonding structure in the debonding process;
the air curtain generation module is communicated with the bonding-off cavity through an air curtain generation port and can send an air curtain to the bonding structure through the air curtain generation port so as to cover the bonding structure;
and the gas discharge module is communicated with the debonding cavity through a discharge air channel on an air curtain path, so that the gas of the air curtain is discharged into the gas discharge module along the discharge air channel.
2. The laser-decomposed bonding gas discharge device according to claim 1, wherein a dimension of the gas inlet of the discharge gas duct in the vertical direction is larger than a dimension of the gas curtain generation port in the vertical direction.
3. The laser-decomposed bonding gas discharge device according to claim 1, wherein the gas inlet of the discharge gas duct has a height lower than that of the gas outlet, and the discharge gas duct is disposed obliquely upward from the gas inlet toward the gas outlet.
4. The laser-decomposed bonding gas discharge apparatus according to claim 1, wherein the gas discharge module includes:
the air suction cavity is communicated with the bonding release cavity through an exhaust air passage;
and the air exhaust pump is communicated with the air suction cavity and is used for exhausting air from the air suction cavity.
5. A laser debonding gas exhaust method performed in the laser debonding exhaust apparatus of any one of claims 1-4, the method comprising:
controlling the air curtain generation module and the air discharge module to work to form an air curtain covering the bonding structure;
sequentially performing local bonding removal operation on a plurality of separation regions of the bonding structure; wherein the local debonding operation includes performing laser irradiation on a current separation region of the bonding structure to cause a phase change of a bonding substance in the current region; applying force to the current separation area to separate the substrate and the wafer corresponding to the current separation area of the bonding structure;
and when the last separation area of the bonding structure completes the local bonding removing operation, controlling the gas curtain generation module and the gas discharge module to stop working.
6. The laser debonding gas exhaust method according to claim 5, wherein an exhaust flow rate of the gas exhaust module is greater than a flow rate of the gas curtain emitted by the gas curtain generation module.
7. The laser debonding gas exhaust method according to claim 5, wherein the local debonding operation comprises:
adsorbing a transparent sucker and a bonding structure, wherein the transparent sucker is provided with a plurality of force application pull rods;
performing laser irradiation on the current separation area of the bonding structure through the transparent sucker to enable the phase of the bonding substance in the current area to be changed;
and applying force to the current separation area by adopting a force application pull rod corresponding to the current separation area so as to separate the substrate and the wafer in the current separation area of the bonding structure.
8. The laser debonding gas venting method according to claim 7, wherein applying a force to the current separation region with a force application pull rod corresponding to the current separation region comprises:
increasing the adsorption force of the transparent sucker and the bonding structure in the current separation area from a first preset value to a second preset value;
and applying a pulling force smaller than a second preset value by using the force application pull rod corresponding to the current separation area.
9. The laser debonding gas venting method according to claim 7, wherein laser irradiation of the currently detached area of the bonding structure through the transparent chuck comprises:
determining a first transmission laser wavelength corresponding to the transparent sucker according to the material of the transparent sucker;
determining a second transmission laser wavelength corresponding to the substrate according to the material of the substrate in the bonding structure;
determining available laser wavelength according to the first transmission laser wavelength and the second transmission laser wavelength;
laser irradiation of the currently detached area of the bonded structure with a laser having a wavelength in the range of the available laser wavelengths.
10. The laser debonding gas venting method according to claim 7, wherein laser irradiation of the current detached area of the bonding structure through the transparent chuck to phase change the bonding substance of the current area comprises:
and irradiating the current separation area of the bonding structure with laser through the transparent sucker so as to change the bonding material in the current area into a gas state or a plasma state.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1099978A (en) * | 1996-09-27 | 1998-04-21 | Hitachi Ltd | Laser beam machine |
| JP2002178174A (en) * | 2000-12-12 | 2002-06-25 | Daido Steel Co Ltd | Bat marking method and bat marking device |
| KR20170123075A (en) * | 2016-04-28 | 2017-11-07 | (주)엔티케이코퍼레이션 | Contactless particle suction device |
| CN109562489A (en) * | 2016-08-04 | 2019-04-02 | 株式会社日本制钢所 | Laser lift-off device, laser-stripping method and organic el display manufacturing method |
| CN111531280A (en) * | 2019-02-01 | 2020-08-14 | 镭射希股份有限公司 | Laser head module of laser stripping device |
| CN211291831U (en) * | 2019-11-22 | 2020-08-18 | 大族激光科技产业集团股份有限公司 | Tension and pressure detection device |
| CN112967993A (en) * | 2021-02-02 | 2021-06-15 | 深圳市化讯半导体材料有限公司 | Wafer bonding-releasing method |
-
2021
- 2021-09-03 CN CN202111035718.0A patent/CN113851395A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1099978A (en) * | 1996-09-27 | 1998-04-21 | Hitachi Ltd | Laser beam machine |
| JP2002178174A (en) * | 2000-12-12 | 2002-06-25 | Daido Steel Co Ltd | Bat marking method and bat marking device |
| KR20170123075A (en) * | 2016-04-28 | 2017-11-07 | (주)엔티케이코퍼레이션 | Contactless particle suction device |
| CN109562489A (en) * | 2016-08-04 | 2019-04-02 | 株式会社日本制钢所 | Laser lift-off device, laser-stripping method and organic el display manufacturing method |
| CN111531280A (en) * | 2019-02-01 | 2020-08-14 | 镭射希股份有限公司 | Laser head module of laser stripping device |
| CN211291831U (en) * | 2019-11-22 | 2020-08-18 | 大族激光科技产业集团股份有限公司 | Tension and pressure detection device |
| CN112967993A (en) * | 2021-02-02 | 2021-06-15 | 深圳市化讯半导体材料有限公司 | Wafer bonding-releasing method |
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