CN117226612A - Method for improving adhesion of wafer substrate scraps after grinding - Google Patents
Method for improving adhesion of wafer substrate scraps after grinding Download PDFInfo
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- CN117226612A CN117226612A CN202311434679.0A CN202311434679A CN117226612A CN 117226612 A CN117226612 A CN 117226612A CN 202311434679 A CN202311434679 A CN 202311434679A CN 117226612 A CN117226612 A CN 117226612A
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- ceramic disc
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- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000227 grinding Methods 0.000 title claims description 15
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims abstract description 22
- 239000004033 plastic Substances 0.000 claims abstract description 12
- 229920003023 plastic Polymers 0.000 claims abstract description 12
- 229910000029 sodium carbonate Inorganic materials 0.000 claims abstract description 11
- 235000012431 wafers Nutrition 0.000 claims description 104
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 32
- 238000004018 waxing Methods 0.000 claims description 22
- 239000000919 ceramic Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- QWOJMRHUQHTCJG-UHFFFAOYSA-N CC([CH2-])=O Chemical compound CC([CH2-])=O QWOJMRHUQHTCJG-UHFFFAOYSA-N 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 238000001883 metal evaporation Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 239000003814 drug Substances 0.000 claims description 3
- 238000007790 scraping Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- BWLBGMIXKSTLSX-UHFFFAOYSA-N 2-hydroxyisobutyric acid Chemical compound CC(C)(O)C(O)=O BWLBGMIXKSTLSX-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000001993 wax Substances 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 239000012188 paraffin wax Substances 0.000 description 3
- 208000001840 Dandruff Diseases 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- -1 alN Chemical compound 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a method for improving chip adhesion of a ground wafer substrate, and belongs to the technical field of semiconductor device processing. The chip removing device comprises a micropore disc and a rotating disc, when removing chips, the chip is adsorbed on the micropore disc, then the chip is contacted with conical soft plastic at the lower side of the rotating disc, sodium carbonate solution is injected into a gap between the micropore disc and the rotating disc, the rotating disc rotates, chips on the surface of the chip are scraped by the conical soft plastic, and then the chip is further cleaned.
Description
Technical Field
The invention relates to a method for improving chip adhesion of a ground wafer substrate, and belongs to the technical field of semiconductor device processing.
Background
The substrate materials for manufacturing the semiconductor light-emitting diode at present mainly comprise the following materials: sapphire (Al 2O 3), silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), alN, and ZnO.
The silicon and gallium arsenide substrate is mainly applied to the manufacture of red-yellow-orange light-emitting diodes at present, gallium arsenide belongs to III-V group compound semiconductors, has better electronic characteristics than silicon, generates less noise at high frequency, is a direct energy gap material, and has good light-emitting characteristics.
However, in the conventional thinning process, a large amount of scraps with smaller size are generated on the surface of the GaAs substrate due to the material factors of the silicon and gallium arsenide substrates, the scraps are adhered to the surface of the substrate, the conventional cleaning method is difficult to clean, the total thickness of the thinned wafer is generally between 50 and 200 mu m, the size is thinner, fragments and fragments are extremely easy to be lost due to excessive cleaning, but the manufacturing of N-face electrodes of the silicon and GaAs-based LEDs must be completed on the thinned substrate face, so that the generation of scraps after thinning must be reduced as much as possible in the production, and scraps on the surface of the substrate are removed quickly and effectively after thinning.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the method for improving the adhesion of the chip of the wafer substrate after grinding, which can rapidly and effectively remove the chip adhered on the surface of the substrate after grinding and thinning, increase the adhesion of the substrate and vapor deposition metal, has simple process, convenient operation and high efficiency, and is widely applicable to GaAs gallium arsenide base, silicon base and other wafers for preparing LED substrates.
The technical scheme of the invention is as follows:
a method for improving adhesion of post-lapping wafer substrate chips comprising the steps of:
step (1): the heating table and the waxing machine are heated to a set temperature;
step (2): placing the ceramic disc on a heating table for preheating, enabling the marking line of the ceramic disc to face upwards, allowing the floating range to reach 105+/-5 ℃ when the display temperature reaches the set temperature, and uniformly coating wax on each corresponding position of the ceramic disc;
step (3): sequentially attaching the wafers to the ceramic disc;
step (4): after the surface mounting is finished, placing the ceramic disc on a waxing machine, placing dust-free paper on the ceramic disc, covering all wafers, and preventing the wafers from being driven to slide by the dust-free paper after covering;
step (5): tabletting the wafer on a waxing machine for 4-7min, cooling after finishing, and taking down the ceramic disc after the temperature is lower than 30 ℃;
step (6): stripping the dust-free paper, wiping the surface of the wafer by using ethanol and the dust-free paper, removing residual wax on the surface of the wafer, and preventing errors from being generated during rough grinding thickness measurement;
step (7): grinding the substrate surface of the wafer by using grinding equipment, wherein the thickness is reduced to 120um;
step (8): placing the thinned wafer on a chip removing device, and removing chips on the surface of the wafer by using the chip removing device;
step (9): placing the chip-removed wafer on a heating table, slightly extending the wafer below the wafer along the edge of the wafer by a blade after the temperature is displayed to reach the set temperature and the wax is melted, prying the wafer upwards slowly along the edge, clamping the wafer into a wafer box by forceps, and then conveying the wafer box to a cleaning station;
step (10): taking out the wafer from the wafer box, sequentially putting the wafer into a first paraffin removal liquid beaker and a second paraffin removal liquid beaker for cleaning, and improving the paraffin removal effect by using two times of cleaning;
step (11): putting the dewaxed wafer into an acetonic medicine tank, wherein the dipping process is slow, so as to avoid cracking;
step (12): taking out the wafer from the acetonide tank, and cleaning with ethanol;
step (13): after the ethanol is washed, the wafer is put into a hot nitrogen dryer for drying;
step (14): and carrying out N-surface metal evaporation on the dried wafer, wherein the evaporated metal is Ni/Au/Ge/Ni/Au laminated metal.
According to the invention, in the step (1), the temperature of the heating table is set to 105 ℃, and the waxing machine turns on the heater to heat up to 100 ℃.
According to the invention, in the step (6), ethanol is sprayed onto dust-free paper during wiping, and then the dust-free paper is used for wiping, so that the wax layer at the edge of the wafer is prevented from being dissolved when the ethanol is sprayed directly onto the wafer, and the wafer is prevented from being polluted during grinding or the wafer is prevented from being blown off later.
According to the invention, in the step (8), the chip removing device comprises a micropore plate and a rotating disc, a plurality of through holes are formed in the micropore plate, the through holes are externally connected with a vacuum pump, a vacuum adsorption wafer is utilized, the lower side of the micropore plate is supported on a plane (the plane is the ground or a required fixed position) through an electric telescopic rod, the rotating disc is arranged above the micropore plate, a plurality of conical soft plastics are arranged on the lower side of the rotating disc, the upper side of the rotating disc is connected with a rotating motor, the rotating motor can be supported and fixed on the plane or a position above the rotating motor and convenient to fix through a bracket, and the motor fixing mode is conventional and is not limited.
According to a further preferred embodiment of the present invention, in the step (8), the chip removing apparatus is operated by starting a vacuum pump, then adsorbing the chip on the micro-porous plate, extending an electric telescopic rod to make the chip contact with the conical soft plastic, then injecting sodium carbonate solution into a gap between the micro-porous plate and the rotating plate, starting a rotating motor to drive the rotating plate to rotate, and scraping the chip on the surface of the chip by using the conical soft plastic.
According to a preferred embodiment of the invention, in step (8), the weight ratio of sodium carbonate solids to water in the sodium carbonate solution is 1:15.
according to a preferred embodiment of the present invention, in step (9), the heating stage temperature is set to 105 ℃.
According to a preferred embodiment of the present invention, in step (10), the water bath heating temperature is set to 50 ℃ with an error of ±3 ℃ in the first and second de-waxing liquid beakers.
According to a preferred embodiment of the present invention, in step (11), the wafer is placed in the acetonide tank when the acetone temperature reaches 52 ℃ (error floating.+ -. 3 ℃).
According to the preferred embodiment of the present invention, in step (12), ethanol is used for 2 minutes, and the operation is performed at room temperature.
According to the invention, in the step (13), the hot nitrogen dryer is set at a temperature of 60 ℃, and the hot nitrogen dryer starts to be used when the temperature is more than or equal to 35 ℃ and is dried for 8 minutes.
The invention is not fully described in the prior art, such as a heating table, a waxing machine and the like, which are all prior equipment.
The invention has the beneficial effects that:
the invention provides a method for improving the adhesion of chip on a ground wafer substrate, which can be used for rapidly and effectively removing the chip adhered on the surface of the substrate through the cooperation of a chip removing device and a subsequent cleaning operation, and improving the adhesion of the substrate and vapor deposition metal.
Drawings
FIG. 1 is a schematic view of the structure of the anti-dandruff device of the present invention;
wherein: 1. a wafer; 2. a microporous disc; 3. conical soft plastic; 4. a rotating disc; 5. sodium carbonate solution was injected into the site.
Detailed Description
The invention will now be further illustrated by way of example, but not by way of limitation, with reference to the accompanying drawings.
Example 1:
the embodiment provides a method for improving adhesion of wafer substrate scraps after grinding, which comprises the following steps:
step (1): heating the heating table to 105 ℃, and heating the waxing machine to 100 ℃;
step (2): placing the ceramic disc on a heating table for preheating, enabling the marking line of the ceramic disc to face upwards, allowing the floating range to reach 105+/-5 ℃ when the display temperature reaches the set temperature, and uniformly coating wax on each corresponding position of the ceramic disc;
step (3): sequentially attaching the wafers to the ceramic disc;
step (4): after the surface mounting is finished, placing the ceramic disc on a waxing machine, placing dust-free paper on the ceramic disc, covering all wafers, and preventing the wafers from being driven to slide by the dust-free paper after covering;
step (5): tabletting the wafer on a waxing machine for 4-7min, cooling after finishing, and taking down the ceramic disc after the temperature is lower than 30 ℃;
step (6): stripping dust-free paper, wiping the surface of a wafer by using ethanol and the dust-free paper, spraying the ethanol onto the dust-free paper during wiping, and then wiping by using the dust-free paper to prevent the ethanol from dissolving a wax layer at the edge of the wafer when directly spraying towards the wafer, polluting the wafer during grinding or causing subsequent blowing off of the wafer, removing residual wax on the surface of the wafer, and preventing errors during rough grinding thickness measurement;
step (7): grinding the substrate surface of the wafer by using grinding equipment, wherein the thickness is reduced to 120um;
step (8): placing the thinned wafer on a chip removing device, and removing chips on the surface of the wafer by using the chip removing device;
the chip removing device comprises a micropore plate 2 and a rotating disk 4, wherein a plurality of through holes are formed in the micropore plate 2, the through holes are externally connected with a vacuum pump, a wafer is adsorbed by vacuum, the lower side of the micropore plate 2 is supported on a plane (the plane is the ground or a required fixed position) through an electric telescopic rod, the rotating disk 4 is arranged above the micropore plate 2, a plurality of conical soft plastics 3 are arranged on the lower side of the rotating disk 4, a rotating motor is connected to the upper side of the rotating disk 4, the rotating motor can be supported and fixed on the plane or a position above the rotating motor which is convenient to fix through a bracket, and the motor fixing mode is conventional and is not limited;
the working method of the anti-dandruff device comprises the steps of starting a vacuum pump, then adsorbing a wafer 1 on a micropore plate 2, extending an electric telescopic rod to enable the wafer to be in contact with a conical soft plastic 3, and then injecting sodium carbonate solution into a gap between the micropore plate 2 and a rotating plate 4, wherein the weight ratio of sodium carbonate solid to water in the sodium carbonate solution is 1:15, starting a rotary motor to drive the rotary disk to rotate, and scraping scraps on the surface of the wafer by using conical soft plastic;
step (9): placing the chip-removed wafer on a heating table, slightly extending the wafer below the wafer along the edge of the wafer by a blade after the display temperature reaches 105 ℃ and wax is melted, prying the wafer upwards slowly along the edge, clamping the wafer into a wafer box by forceps, and then conveying the wafer box to a cleaning station;
step (10): after the water bath heating temperature in the first de-waxing liquid beaker and the second de-waxing liquid beaker reaches 50 ℃, taking out the wafer from the wafer box, sequentially putting the wafer into the first de-waxing liquid beaker and the second de-waxing liquid beaker for cleaning, and improving the de-waxing effect by using two cleaning steps;
step (11): when the temperature of the acetone reaches 52 ℃, putting the wafer after wax removal into an acetone medicine tank, wherein the dipping process is slow, so as to avoid cracking;
step (12): taking out the wafer from the acetonide tank, cleaning with ethanol for 2 minutes, and operating at room temperature;
step (13): after the ethanol is washed, putting the wafer into a hot nitrogen dryer for drying, setting the temperature of the hot nitrogen dryer to be 60 ℃, and starting to use when the temperature is more than or equal to 35 ℃ for drying for 8 minutes;
step (14): and carrying out N-surface metal evaporation on the dried wafer, wherein the evaporated metal is Ni/Au/Ge/Ni/Au laminated metal.
With the working wafer 119 sheets of this example, after N-side metal evaporation, the yield was 99.7%, and the cracking rate due to the cleaning process was 0.02%.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
Claims (10)
1. A method for improving adhesion of post-lapping wafer substrate chips comprising the steps of:
step (1): the heating table and the waxing machine are heated to a set temperature;
step (2): placing the ceramic disc on a heating table for preheating, enabling marked lines of the ceramic disc to face upwards, and uniformly coating wax on each corresponding position of the ceramic disc when the display temperature reaches the set temperature;
step (3): sequentially attaching the wafers to the ceramic disc;
step (4): after the surface mounting is finished, placing the ceramic disc on a waxing machine, placing dust-free paper on the ceramic disc, and covering all wafers;
step (5): tabletting the wafer on a waxing machine for 4-7min, cooling after finishing, and taking down the ceramic disc after the temperature is lower than 30 ℃;
step (6): stripping the dust-free paper, wiping the surface of the wafer by using ethanol and the dust-free paper, and removing residual wax on the surface of the wafer;
step (7): grinding the substrate surface of the wafer by using grinding equipment, wherein the thickness is reduced to 120um;
step (8): placing the thinned wafer on a chip removing device, and removing chips on the surface of the wafer by using the chip removing device;
step (9): placing the chip-removed wafer on a heating table, slightly extending the wafer below the wafer along the edge of the wafer by a blade after the temperature is displayed to reach the set temperature and the wax is melted, prying the wafer upwards along the edge, clamping the wafer into a wafer box by forceps, and then conveying the wafer box to a cleaning station;
step (10): taking out the wafer from the wafer box, and sequentially putting the wafer into a first de-waxing liquid beaker and a second de-waxing liquid beaker for cleaning;
step (11): placing the dewaxed wafer into an acetonate medicine tank;
step (12): taking out the wafer from the acetonide tank, and cleaning with ethanol;
step (13): after the ethanol is washed, the wafer is put into a hot nitrogen dryer for drying;
step (14): and carrying out N-surface metal evaporation on the dried wafer, wherein the evaporated metal is Ni/Au/Ge/Ni/Au laminated metal.
2. The method of improving adhesion of post-grind wafer substrate chips as defined in claim 1, wherein in step (1), the heating table temperature is set to 105 ℃, and the waxing machine turns on the heater to raise the temperature to 100 ℃.
3. The method of improving adhesion of post-grind wafer substrate chips as defined in claim 1, wherein in step (6), ethanol is sprayed onto the dust-free paper during wiping, and then the dust-free paper is used for wiping.
4. The method of claim 1, wherein in step (8), the chip removing device comprises a micro-porous plate and a rotating plate, a plurality of through holes are formed in the micro-porous plate, the through holes are externally connected with a vacuum pump, the lower side of the micro-porous plate is supported on a plane through an electric telescopic rod, the rotating plate is arranged above the micro-porous plate, a plurality of conical soft plastics are arranged on the lower side of the rotating plate, and a rotating motor is connected to the upper side of the rotating plate.
5. The method of claim 4, wherein in step (8), the chip removing apparatus is operated by starting a vacuum pump, then sucking the chip onto a micro-porous plate, extending an electric telescopic rod to make the chip contact with a conical soft plastic, then injecting sodium carbonate solution into a gap between the micro-porous plate and a rotating plate, starting a rotating motor to rotate the rotating plate, and scraping chip on the surface of the chip by using the conical soft plastic.
6. The method of improving adhesion of post-grind wafer substrate chips as defined in claim 5, wherein in step (8), the weight ratio of sodium carbonate solids to water in the sodium carbonate solution is 1:15.
7. the method for improving adhesion of post-grind wafer substrate chips as defined in claim 1, wherein in step (9), the heating stage temperature is set to 105 ℃.
8. The method of improving post-grind wafer substrate chip adhesion according to claim 1, wherein in step (10), the water bath heating temperature is set to 50 ℃ for the first de-waxing liquid beaker and the second de-waxing liquid beaker with an error of ± 3 ℃.
9. The method of improving adhesion of post-grind wafer substrate chips as defined in claim 1, wherein in step (11), the wafers are placed into an acetonide tank when the acetone temperature reaches 52 ℃.
10. The method of improving adhesion of post-grind wafer substrate chips as defined in claim 1, wherein in step (12), ethanol is used for 2 minutes at room temperature;
in the step (13), the temperature of the hot nitrogen dryer is set to 60 ℃, and the hot nitrogen dryer starts to be used when the temperature is more than or equal to 35 ℃ and is dried for 8 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311434679.0A CN117226612A (en) | 2023-11-01 | 2023-11-01 | Method for improving adhesion of wafer substrate scraps after grinding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311434679.0A CN117226612A (en) | 2023-11-01 | 2023-11-01 | Method for improving adhesion of wafer substrate scraps after grinding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117226612A true CN117226612A (en) | 2023-12-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311434679.0A Pending CN117226612A (en) | 2023-11-01 | 2023-11-01 | Method for improving adhesion of wafer substrate scraps after grinding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117226612A (en) |
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2023
- 2023-11-01 CN CN202311434679.0A patent/CN117226612A/en active Pending
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