CN112838136B - Ultra-broadband graphene photoelectric detector - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 45
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 36
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
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Abstract
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a graphene super-bandwidth photoelectric detector which comprises a substrate layer, an insulation isolation layer, a resonant cavity waveguide structure and a heterojunction. According to the invention, graphene and titanium dioxide are combined to form a heterojunction, and the characteristic that the graphene can detect red light to visible light is combined with the characteristic that the titanium dioxide material can absorb purple light, so that the spectral response of the photoelectric detector comprises a region from infrared light to visible light and even to the purple light, and the characteristics of high carrier mobility and the like of the graphene can also improve the optical responsivity and optical gain of the detector.
Description
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a graphene ultra-bandwidth photoelectric detector.
Background
With the rapid development of the photoelectric information technology, the photoelectric detector has become an indispensable part in daily life, and is mainly applied to the fields of environmental monitoring, optical communication, thermal imaging, military and the like. At present, the most widely used silicon-based photoelectric detector can detect visible light to infrared wave bands. However, the silicon-based photoelectric detector has some limitations, and as the manufacturing technology of the silicon-based semiconductor approaches the limit of the moore's law, if the size of the device is further reduced, the classical physical theory is not applicable any more; in addition, the silicon-based detector has the limitations of low light absorption rate, narrow absorption spectrum and the like.
In recent years, through intensive research on two-dimensional materials, unique physical, chemical and electronic properties thereof have been receiving wide attention. Particularly, the graphene material has excellent performance and transport property on photoelectricity, so that the graphene material has wide application prospect in the field of next-generation photoelectronic devices. The graphene has the excellent characteristics of low defect density, easiness in realizing large-area transfer, low preparation cost, large specific surface area, high carrier mobility and the like, so that the graphene is widely applied to high-frequency photoelectric detectors.
At present, the demand for new materials with high light absorption efficiency, wide frequency spectrum and good flexibility is increasing day by day, and the new two-dimensional materials are going deep into the hierarchy, so that the new two-dimensional materials provide new opportunities for the design and preparation of high-performance photoelectric detectors, and make up for some limitations in the application of silicon-based detectors. The breakthrough of the graphene photoelectric detector technology is expected to realize flexible, high-performance and wide-spectrum detection, and has good prospect in the application of future photoelectric detectors.
Disclosure of Invention
Aiming at the technical problems that the size of the silicon-based detector is limited, the absorptivity of light is not high and the absorption spectrum is narrow, the invention provides the graphene ultra-bandwidth photoelectric detector which is high in performance, absorptivity and utilization rate and responsiveness.
In order to solve the technical problems, the invention adopts the technical scheme that:
the graphene super-bandwidth photoelectric detector comprises a substrate layer, an insulation isolation layer, a resonant cavity waveguide structure and a heterojunction, wherein the substrate layer is provided with the resonant cavity waveguide structure, the resonant cavity waveguide structure is provided with the insulation isolation layer, and the insulation isolation layer is provided with the heterojunction.
The heterojunction includes source electrode, drain electrode, gate electrode, graphite alkene film and titanium dioxide film, source electrode and drain electrode all set up on insulating isolation layer, be provided with graphite alkene film and titanium dioxide film between source electrode and the drain electrode, the titanium dioxide film sets up the top at graphite alkene film, one side of graphite alkene film is provided with the gate electrode.
The resonant cavity waveguide structure comprises a first medium filling layer, a second medium filling layer and a waveguide, wherein the first medium filling layer, the second medium filling layer and the waveguide are all arranged on a substrate layer, and the first medium filling layer and the second medium filling layer are respectively positioned on two sides of the waveguide.
The substrate layer is made of silicon, and the insulating isolation layer is made of SiO or boron nitride.
The material of the source electrode, the drain electrode and the gate electrode at least comprises one of gold, silver and copper.
A first power supply is additionally arranged between the source electrode and the gate electrode, and a second power supply is additionally arranged between the source electrode and the drain electrode.
The waveguide is of a rectangular structure, the cross section of the waveguide is transited to a circular waveguide structure to form a square-circular waveguide converter, the transmission main film of the waveguide is an H film, the waveguide is made of silicon, germanium, arsenic, III-V group compounds or II-VI group compounds, and the first medium filling layer and the second medium filling layer are made of metal oxides.
The refractive indexes of the first dielectric filling layer and the second dielectric filling layer are lower than that of the waveguide.
The graphene film is single-layer or multi-layer graphene prepared by mechanical stripping or CVD vapor deposition or reduction oxidation.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the invention, graphene and titanium dioxide are combined to form a heterojunction, and the characteristic that the graphene can detect red light to visible light is combined with the characteristic that the titanium dioxide material can absorb purple light, so that the spectral response of the photoelectric detector comprises a region from infrared light to visible light and even to purple light, and the characteristics of the graphene, such as high carrier mobility, and the like, can also improve the light responsivity and light gain of the detector;
2. according to the invention, the resonant cavity waveguide structure is arranged on the substrate layer, and the waveguide structure is a structure that two kinds of low-refractive-index metals sandwich a high-refractive-index metal, so that the light utilization rate and the light absorption rate of the detector can be greatly improved, and the response speed of the detector can also be improved;
3. the waveguide structure can effectively reduce the integral capacitance of the detector, so that the bandwidth of the detector capable of responding is wider, and the responsivity of the detector is improved;
4. the insulating layer arranged above the resonant cavity waveguide structure is SiO with larger dielectric constant 2 Or boron nitride can weaken the coulomb effect among current carriers, thereby weakening the current carrier scattering, improving the mobility and further improving the responsivity of the graphene detector;
5. according to the invention, the grid electrode is additionally arranged besides the source electrode and the drain electrode, and the grid electrode is connected with the source electrode, so that a positive electric field formed by the graphene film can be enhanced, a photogenerated carrier generated by a deep depletion layer is increased, and the generated photogate voltage is increased, so that the field effect regulation and control of the graphene by the grating voltage are enhanced, and the concentration of a conductive channel is also enhanced.
Drawings
FIG. 1 is a schematic view of the structure of the present invention;
FIG. 2 is a schematic cross-sectional view of the present invention;
FIG. 3 is a top schematic view of the present invention;
fig. 4 is a schematic view of the structure of the waveguide of the present invention.
Wherein: the structure comprises a source electrode 1, an insulating isolation layer 2, a second dielectric filling layer 3, a substrate layer 4, a resonant cavity waveguide structure 5, a waveguide 6, a first dielectric filling layer 8, a titanium dioxide film 9, a graphene film 10, a drain electrode 11, a gate electrode 12, a first power supply 13 and a second power supply 14.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the combination or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, are not to be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless explicitly stated or limited otherwise, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The utility model provides a graphite alkene ultra-broadband photoelectric detector, as shown in fig. 1, fig. 2, includes substrate layer 4, insulating isolation layer 2, resonant cavity waveguide structure 5 and heterojunction, is provided with resonant cavity waveguide structure 5 on the substrate layer 4, is provided with insulating isolation layer 2 on the resonant cavity waveguide structure 5, is provided with the heterojunction on insulating isolation layer 2.
Further, the heterojunction comprises a source electrode 1, a drain electrode 11, a gate electrode 12, a graphene film 10 and a titanium dioxide film 9, as shown in fig. 3, the source electrode 1 and the drain electrode 11 are both arranged on the insulating isolation layer 2, the graphene film 10 and the titanium dioxide film 9 are arranged between the source electrode 1 and the drain electrode 11, the titanium dioxide film 9 is arranged above the graphene film 10, the graphene film 10 is combined with the titanium dioxide film 9, and the graphene detector also has response to the purple light by utilizing the characteristic that the titanium dioxide can absorb the purple light. One side of the graphene thin film 10 is provided with a gate electrode 12. The graphene film 10 and the titanium dioxide film 9 are used as light absorption layers, and the rest of structures are used for enhancing the absorption rate and the utilization rate of light.
Further, the resonant cavity waveguide structure 5 includes a first dielectric filling layer 8, a second dielectric filling layer 3, and a waveguide 6, as shown in fig. 4, the first dielectric filling layer 8, the second dielectric filling layer 3, and the waveguide 6 are all disposed on the substrate layer 4, and the first dielectric filling layer 8 and the second dielectric filling layer 3 are respectively located at two sides of the waveguide 6. Through the resonant cavity waveguide structure 5, the whole capacitance of the detector becomes lower, so that the detector has higher detection bandwidth, and the spectral response of the photoelectric detector comprises a region from infrared light to visible light or even purple light; in addition, the absorption rate of the graphene film 10 to light is increased through the refraction of the resonant cavity waveguide structure 5 to the light, and then the overall light absorption rate and the light utilization rate of the detector are improved.
Further, preferably, the material of the substrate layer 4 is silicon, and the silicon material is used as a deep depletion layer to generate a photogenerated carrier, and the photogenerated carrier is gathered in a potential well formed at an interface to generate a photogenerated gate voltage to regulate and control a graphene field, so that the concentration of a conductive channel is increased. Preferably, the material of the insulating isolation layer 2 is SiO 2 Or boron nitride, the insulating isolation layer 2 is made of a material with a large dielectric constant, so that carrier scattering is weakened, and carrier mobility is improved.
Further, it is preferable that the material of the source electrode 1, the drain electrode 11, and the gate electrode 12 includes at least one of gold, silver, and copper.
Further, a first power supply 13 is provided between the source electrode 1 and the gate electrode 12, and a second power supply 14 is provided between the source electrode 1 and the drain electrode 11. The positive electric field effect on the graphene film is increased by additionally arranging the first power supply 13 and the second power supply 14, so that the measurable current is increased, and the sensitivity of the detector is improved.
Further, preferably, the waveguide 6 has a rectangular structure, the cross section of the waveguide 6 is transited to a circular waveguide structure to form a square-circular waveguide converter, the transmission main film of the waveguide 6 is an H11 film, and the waveguide 6 is made of silicon, germanium, arsenic, III-V compounds or II-VI compounds. Preferably, the first dielectric filling layer 8 and the second dielectric filling layer 3 are made of metal oxide.
Further, preferably, the refractive index of the first dielectric filling layer 8 and the refractive index of the second dielectric filling layer 3 are lower than the refractive index of the waveguide 6, the waveguide 6 is made of a high refractive index material, the refractive index of the waveguide 6 is 2 to 4.6, and the refractive index of the first dielectric filling layer 8 and the refractive index of the second dielectric filling layer 3 are far lower than the refractive index of the waveguide and are 0.8 to 2.3.
Further, it is preferable that the graphene thin film 10 is a single-layer or multi-layer graphene prepared by mechanical exfoliation or CVD vapor deposition or reduction oxidation.
The working principle of the invention is as follows: according to the invention, the graphene and the titanium dioxide are combined into a heterojunction, and the characteristics of the two materials are combined, so that the measurable bandwidth of the photoelectric detector is widened, and the ultra-wideband photoelectric detector is realized; meanwhile, the resonant cavity waveguide structure is arranged under the insulating isolation layer, so that the absorptivity and the utilization rate of light are enhanced, the migration rate of carriers is accelerated, the response speed of the detector is improved, and the difference balance between ultra-fast response and ultra-high response is adjusted.
Although only the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art, and all changes are encompassed in the scope of the present invention.
Claims (8)
1. The utility model provides a graphite alkene ultra-broadband photoelectric detector which characterized in that: the waveguide structure comprises a substrate layer (4), an insulating isolation layer (2), a resonant cavity waveguide structure (5) and a heterojunction, wherein the substrate layer (4) is provided with the resonant cavity waveguide structure (5), the resonant cavity waveguide structure (5) is provided with the insulating isolation layer (2), and the insulating isolation layer (2) is provided with the heterojunction; the heterojunction includes source electrode (1), drain electrode (11), gate electrode (12), graphite alkene film (10) and titanium dioxide film (9), source electrode (1) and drain electrode (11) all set up on insulating isolation layer (2), be provided with graphite alkene film (10) and titanium dioxide film (9) between source electrode (1) and drain electrode (11), titanium dioxide film (9) set up the top in graphite alkene film (10), one side of graphite alkene film (10) is provided with gate electrode (12).
2. The graphene ultra-wideband photodetector of claim 1, wherein: the resonant cavity waveguide structure (5) comprises a first medium filling layer (8), a second medium filling layer (3) and a waveguide (6), wherein the first medium filling layer (8), the second medium filling layer (3) and the waveguide (6) are all arranged on a substrate layer (4), and the first medium filling layer (8) and the second medium filling layer (3) are respectively located on two sides of the waveguide (6).
3. The graphene ultra-wideband photodetector of claim 1, wherein: the substrate layer (4) is made of silicon, and the insulating isolation layer (2) is made of SiO 2 Or boron nitride.
4. The graphene ultra-wideband photodetector of claim 1, wherein: the material of the source electrode (1), the drain electrode (11) and the gate electrode (12) at least comprises one of gold, silver and copper.
5. The graphene ultra-wideband photodetector of claim 1, wherein: a first power supply (13) is additionally arranged between the source electrode (1) and the gate electrode (12), and a second power supply (14) is additionally arranged between the source electrode (1) and the drain electrode (11).
6. The graphene ultra-wideband photodetector of claim 2, wherein: the waveguide (6) is of a rectangular structure, the cross section of the waveguide (6) is in a circular waveguide transition structure to form a square-circular waveguide converter, a transmission main film of the waveguide (6) is an H11 film, the waveguide (6) is made of silicon, germanium, arsenic, III-V compounds or II-VI compounds, and the first medium filling layer (8) and the second medium filling layer (3) are made of metal oxides.
7. The graphene ultra-wideband photodetector of claim 2, wherein: the refractive index of the first medium filling layer (8) and the second medium filling layer (3) is lower than that of the waveguide (6).
8. The graphene ultra-wideband photodetector of claim 1, wherein: the graphene film (10) is single-layer or multi-layer graphene prepared by mechanical stripping or CVD vapor deposition or reduction oxidation.
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| WO2022229283A1 (en) * | 2021-04-29 | 2022-11-03 | Paragraf Limited | A photodetector and method of forming the same |
| CN113540282B (en) * | 2021-07-20 | 2023-04-07 | 南京大学 | Double-layer graphene photoelectric detector capable of continuously adjusting waveband from far infrared to terahertz |
| CN115101608A (en) * | 2022-06-16 | 2022-09-23 | 中国科学院半导体研究所 | Graphene infrared detector |
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