CN106057961A - Titanium-oxide-nanoband-based heterojunction type photovoltaic detector and preparation method thereof - Google Patents
Titanium-oxide-nanoband-based heterojunction type photovoltaic detector and preparation method thereof Download PDFInfo
- Publication number
- CN106057961A CN106057961A CN201610504316.3A CN201610504316A CN106057961A CN 106057961 A CN106057961 A CN 106057961A CN 201610504316 A CN201610504316 A CN 201610504316A CN 106057961 A CN106057961 A CN 106057961A
- Authority
- CN
- China
- Prior art keywords
- nitrogen
- doped graphene
- tiox nano
- ohmic electrode
- nano band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 74
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 73
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910003087 TiOx Inorganic materials 0.000 claims description 74
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 72
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 56
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 29
- 229910052737 gold Inorganic materials 0.000 claims description 29
- 239000010931 gold Substances 0.000 claims description 29
- 235000012239 silicon dioxide Nutrition 0.000 claims description 28
- 239000000377 silicon dioxide Substances 0.000 claims description 27
- 230000004888 barrier function Effects 0.000 claims description 25
- 238000005516 engineering process Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000010894 electron beam technology Methods 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000002127 nanobelt Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 238000004064 recycling Methods 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 238000010849 ion bombardment Methods 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract 1
- 229960005196 titanium dioxide Drugs 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- -1 graphite Alkene Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
The invention relates to a titanium-oxide-nanoband-based heterojunction type photovoltaic detector and a preparation method thereof. According to the invnetion, the heterojunction type photovoltaic detector is one formed by a P type titanium-oxide nanoband and an N type nitrogen-doped graphene material. The prepared detector being sensitive to visible light has high response degree and gain and the response speed is fast; and the good foundation is laid for application and integration of nanometer materials in a photoelectric device.
Description
Technical field
The present invention relates to a kind of p-type cadmium telluride nano belt and N-type nitrogen-doped graphene heterojunction type photoelectric detector and
Preparation method.
Background technology
Photodetector refers to a kind of physical phenomenon being caused illuminated material electric conductivity to change by radiation.Photodetector
Extensive use is had in military and national economy every field.It is mainly used in radionetric survey and spy at visible ray or near infrared band
Survey, industry automatic control, Photometric Measurement etc.；The sides such as missile guidance, infrared thermal imaging, infrared remote sensing it are mainly used at infrared band
Face.
Photodetector can be converted to the signal of telecommunication optical signal.According to the device mode difference device in other words to rdaiation response
The mechanism of part work is different, and photodetector can be divided into two big classes: a class is photon detector；Another kind of is thermal detector.Root
Photoconduction type and junction type (hetero-junctions) photodetector can be divided into according to device architecture.Photoconduction is owing to photon is at quasiconductor
Middle when being absorbed, produce what moveable carrier was caused.Nano semiconductor photodetector is all based on light mostly at present
Conductivity type structure, due to the restriction of interelectrode carrier transport time, its performance such as speed, response time is the most poor.Photoelectricity
The response speed of detector determines its ability following optical signalling rapid translating, has pole in light wave communication and optical communication
Its important effect.Slower response speed will seriously limit photodetector application in photoelectric device integrated circuit.
Summary of the invention
It is desirable to provide a kind of heterojunction type photoelectric detector and preparation method thereof, to be solved technical problem is that
Improve response speed and the stability of performance of photodetector, and simplification preparation method is adapted to industrialized production as far as possible.
The hetero-junctions of heterojunction type photoelectric detector of the present invention is by P TiOx nano band and N-type nitrogen-doped graphene structure
Become.
The present invention solves technical problem and adopts the following technical scheme that
Heterojunction type photoelectric detector of the present invention has a following structure:
Being covered with silicon dioxide layer on the surface of silicon base, the Dispersion on surface at silicon dioxide layer has the TiOx nano of tiling
Band, is respectively arranged with Ohmic electrode as exporting a pole at the two ends of described TiOx nano band, and described Ohmic electrode is with described
TiOx nano band is Ohmic contact；Submit superimposition at described TiOx nano band and have nitrogen-doped graphene, described N doping stone
Ink alkene is isolated between two Ohmic electrodes and with Ohmic electrode；Described nitrogen-doped graphene is provided with Ohmic electrode make
For another output stage, described Ohmic electrode and described nitrogen-doped graphene be Ohmic contact and with TiOx nano band and ohm electricity
Pole isolates；
Described TiOx nano band is p-type TiOx nano band；Described nitrogen-doped graphene is N-type nitrogen-doped graphene；
Described Ohmic electrode and Ohmic electrode are gold electrode.
The preparation method of heterojunction type photoelectric detector of the present invention is as follows:
TiOx nano band is distributed on the silicon dioxide layer of silicon substrate surface, uses ultraviolet photolithographic technology two subsequently
Make pair of electrodes pattern on silicon oxide layer by lithography, then utilize electron beam coating technique evaporation to obtain a pair Ohmic electrode, described
Ohmic electrode and described TiOx nano band are Ohmic contact；Nitrogen-doped graphene is overlying on the surface of silicon dioxide layer, utilizes
Ultraviolet photolithographic technology makes by lithography on silicon dioxide layer and TiOx nano band is overlapping and between two Ohmic electrodes and with
The electrode pattern of Ohmic electrode isolation, the nitrogen-doped graphene then utilizing oxygen plasma bombardment to remove beyond electrode pattern obtains
Nitrogen-doped graphene, recycling ultraviolet photolithographic technology and electron beam coating technique prepare Ohmic electrode, described Ohmic electrode
Form Ohmic contact with nitrogen-doped graphene and isolate with TiOx nano band and Ohmic electrode.
Heterojunction type photoelectric detector of the present invention has a following structure:
Being covered with silicon dioxide layer on the surface of silicon base, on the surface of silicon dioxide layer, tiling has nitrogen-doped graphene,
Being provided with insulating barrier on nitrogen-doped graphene, the Dispersion on surface at described insulating barrier has titanium oxide nano belt and described titanium oxide to receive
A part for rice band contacts with nitrogen-doped graphene；It is provided with Ohmic electrode, described Ohmic electrode and titanium oxide on the insulating layer
Nano belt is Ohmic contact；Nitrogen-doped graphene is provided with Ohmic electrode, described Ohmic electrode and insulating barrier, Ohmic electrode
Isolate with TiOx nano band；
Described TiOx nano band is p-type TiOx nano band；Described nitrogen-doped graphene is N-type nitrogen-doped graphene；
Described Ohmic electrode and Ohmic electrode are gold electrode.
The preparation method of heterojunction type photoelectric detector of the present invention is as follows:
Nitrogen-doped graphene is tiled on the silicon dioxide layer of silicon substrate surface, use ultraviolet photolithographic and magnetron sputtering
Membrane technology prepares insulating barrier on the surface of nitrogen-doped graphene, is made by the marginal position that TiOx nano band is distributed on insulating barrier
Described TiOx nano, with part and nitrogen-doped graphene overlapping contact, utilizes ultraviolet photolithographic technology and electron beam coating technique
Preparing Ohmic electrode on the insulating layer, described Ohmic electrode and described TiOx nano band are Ohmic contact；Again with ultraviolet
Photoetching technique and electron beam coating technique prepare Ohmic electrode, described Ohmic electrode and insulating barrier, Europe on nitrogen-doped graphene
Nurse electrode and the isolation of TiOx nano band.
Described insulating barrier breathes out (HfO), zirconium oxide (ZrO), aluminium oxide (AlO) or titanium dioxide selected from silicon nitride (SiN), oxidation
Silicon (SiO), the thickness of insulating barrier is that 10 nanometers are to 10 microns.
The thickness of gold electrode of the present invention is 100nm.
P-type TiOx nano band and N-type nitrogen-doped graphene that the present invention uses are to use chemistry gas according to prior art
Phase deposition process synthesizes in horizontal tube quartz stove.
Compared with the prior art, the present invention has the beneficial effect that:
The present invention relates to a kind of technique relatively simple, method with low cost is prepared for p-type titanium oxide and mixes with N-type nitrogen
Miscellaneous Graphene heterojunction type photoelectric detector.Due to interface acceleration at electric field in it, hetero-junctions junction type photodetector
Speed of detection is substantially better than photoconduction type detector.Additionally, nitrogen-doped graphene has the spies such as flexibility, transparent and high conductivity
Point, makes detector possess preferable reception and is detected the ability of light, therefore possessed higher responsiveness and gain.So,
Utilize TiOx nano band and nitrogen-doped graphene to be built into heterojunction type photoelectric detector and possess higher detectivity, higher
Responsiveness, gain and speed of detection, the beneficially photodetector application in Quick photoelectric integrated circuit faster.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to
Other accompanying drawing is obtained according to these accompanying drawings.
Fig. 1 is p-type TiOx nano band and N-type nitrogen-doped graphene heterojunction type photodetection in the embodiment of the present invention 1
The structural representation of device.
Fig. 2 is p-type TiOx nano band and N-type nitrogen-doped graphene heterojunction type photodetection in the embodiment of the present invention 2
The structural representation of device.
Label in figure: 1-silicon base, 2-silicon dioxide layer, 3-Ohmic electrode, 4-TiOx nano band, 5-N doping graphite
Alkene, 6-Ohmic electrode, 7-silicon base, 8-silicon dioxide layer, 9-nitrogen-doped graphene, 10-insulating barrier, 11-TiOx nano band,
12-Ohmic electrode, 13-Ohmic electrode.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, those of ordinary skill in the art obtained on the premise of not making creative work all its
His embodiment, broadly falls into the scope of protection of the invention.
Embodiment 1:
The present embodiment p-type TiOx nano band and N-type nitrogen-doped graphene heterojunction type photoelectric detector have following knot
Structure:
Seeing Fig. 1, the Dispersion on surface in the silicon base 1 being covered with silicon dioxide layer 2 has the TiOx nano band 4 of tiling,
The two ends of described TiOx nano band 4 are respectively arranged with the gold electrode 3 of 100 nanometer thickness as exporting a pole, described gold electrode 3 with
Described TiOx nano band 4 is in Ohmic contact；Submit superimposition at described TiOx nano band 4 and have nitrogen-doped graphene 5, described nitrogen
Doped graphene 5 is isolated between two gold electrodes 3 and with gold electrode 3；Described nitrogen-doped graphene 5 is provided with 100
The gold electrode 6 of nanometer thickness is as another output stage, and described gold electrode 6 and described nitrogen-doped graphene 5 are in Ohmic contact and and oxygen
Change titanium nano belt 4 and gold electrode 3 is isolated；
Wherein TiOx nano band 4 is p-type TiOx nano band；Described nitrogen-doped graphene 5 is N-type N doping graphite
Alkene.
In the present embodiment, the preparation method of p-type TiOx nano band and N-type nitrogen-doped graphene junction type photodetector is such as
Under:
First, chemical gaseous phase depositing process is utilized to synthesize TiOx nano band 4 and N doping in horizontal tube quartz stove
Graphene 5, is distributed to be covered with the surface of the silicon base 1 of silicon dioxide layer 2, the thickness of silicon dioxide layer 2 by TiOx nano band 4
It is 300 nanometers, uses ultraviolet photolithographic technology to make pair of electrodes pattern on silicon dioxide layer 2 by lithography subsequently, then utilize electronics
Bundle coating technique evaporation obtains the gold electrode 3 of a pair 100 nanometer thickness, and described gold electrode 3 and described TiOx nano band 4 are in ohm
Contact；Nitrogen-doped graphene 5 is overlying on the surface of silicon dioxide layer 2, utilizes the photoetching on silicon dioxide layer 2 of ultraviolet photolithographic technology
Go out and TiOx nano band 4 is overlapping and between two gold electrodes 3 and with the electrode pattern of gold electrode 3 isolation, then utilize
Oxygen plasma bombardment removes the nitrogen-doped graphene beyond electrode pattern and obtains nitrogen-doped graphene 5, recycles ultraviolet photolithographic skill
Art and electron beam coating technique prepare the gold electrode 6 of 100 nanometer thickness, and described gold electrode 6 forms Europe with nitrogen-doped graphene 5
Nurse contacts and isolates with TiOx nano band 4 and gold electrode 3, TiOx nano band 4 formed heterogeneous with nitrogen-doped graphene 5
Knot.
Embodiment 2:
As in figure 2 it is shown, the present embodiment p-type TiOx nano band and N-type nitrogen-doped graphene heterojunction type photoelectric detector
There is following structure:
Surface tiling in the silicon base 7 being covered with silicon dioxide layer 8 has nitrogen-doped graphene 9, on nitrogen-doped graphene 9
Being provided with the insulating barrier 10 of 30 nanometer thickness, the Dispersion on surface at described insulating barrier 10 has titanium oxide nano belt 11 and described titanium oxide
A part for nano belt 11 contacts with nitrogen-doped graphene 9；Insulating barrier 10 is provided with the gold electrode 12 of 100 nanometer thickness, institute
State gold electrode 12 with TiOx nano band 11 in Ohmic contact；Nitrogen-doped graphene 9 is provided with the gold electrode of 100 nanometer thickness
13, described gold electrode 13 is isolated with insulating barrier 10, gold electrode 12 and TiOx nano band 11；
Described TiOx nano band 11 is p-type TiOx nano band；Described nitrogen-doped graphene 9 is N-type N doping graphite
Alkene.
Insulating barrier 10 described in the present embodiment is silicon nitride.
In the present embodiment, the preparation method of p-type TiOx nano band and N-type nitrogen-doped graphene junction type photodetector is such as
Under:
First, chemical gaseous phase depositing process is utilized to synthesize TiOx nano band 11 and N doping in horizontal tube quartz stove
Graphene 9, the surface of the silicon base 7 being covered with silicon dioxide layer 8 that nitrogen-doped graphene 9 is tiled, use ultraviolet photolithographic and magnetic
Control sputter coating technology prepares the insulating barrier 10 of 30 nanometer thickness on the surface of nitrogen-doped graphene 9, by 11 points of TiOx nano band
The marginal position being scattered on insulating barrier 10 makes described TiOx nano band 11 have part and nitrogen-doped graphene 9 overlapping contact, profit
On insulating barrier 10, the gold electrode 12 of 100 nanometer thickness, described gold electrode is prepared with ultraviolet photolithographic technology and electron beam coating technique
12 with described TiOx nano band 11 in Ohmic contact；Again with ultraviolet photolithographic technology and electron beam coating technique at N doping
The gold electrode 13 of 100 nanometer thickness, described gold electrode 13 and insulating barrier 10, gold electrode 12 and TiOx nano is prepared on Graphene 9
Band 11 isolation.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (5)
1. a heterojunction type photoelectric detector based on TiOx nano band, it is characterised in that there is following structure:
Being covered with silicon dioxide layer on the surface of silicon base, the Dispersion on surface at silicon dioxide layer has the TiOx nano band of tiling,
Ohmic electrode it is respectively arranged with as exporting a pole, described Ohmic electrode and described oxidation at the two ends of described TiOx nano band
Titanium nano belt is Ohmic contact；
Submitting superimposition at described TiOx nano band has nitrogen-doped graphene, described nitrogen-doped graphene to be positioned at two Ohmic electrodes
Between and with Ohmic electrode isolate；
Described nitrogen-doped graphene is provided with Ohmic electrode as another output stage, described Ohmic electrode and described N doping
Graphene is Ohmic contact and isolates with TiOx nano band and Ohmic electrode；
Described TiOx nano band is p-type TiOx nano band；Described nitrogen-doped graphene is N-type nitrogen-doped graphene；
Described Ohmic electrode and Ohmic electrode are gold electrode.
2. a preparation method for the heterojunction type photoelectric detector based on TiOx nano band described in claim 1, it is special
Levy and be, prepare as follows:
TiOx nano band is distributed on the silicon dioxide layer of silicon substrate surface, uses ultraviolet photolithographic technology in titanium dioxide subsequently
Make pair of electrodes pattern on silicon layer by lithography, then utilize electron beam coating technique evaporation to obtain a pair Ohmic electrode, described ohm
Electrode and described TiOx nano band are Ohmic contact；
Nitrogen-doped graphene is overlying on the surface of silicon dioxide layer, utilize ultraviolet photolithographic technology make by lithography on silicon dioxide layer with
TiOx nano band overlapping and between two Ohmic electrodes and with the electrode pattern of Ohmic electrode isolation, then utilize oxygen etc.
Ion bom bardment removes the nitrogen-doped graphene beyond electrode pattern and obtains nitrogen-doped graphene, recycling ultraviolet photolithographic technology and electricity
Son bundle coating technique prepares Ohmic electrode, and described Ohmic electrode forms Ohmic contact and and titanium oxide with nitrogen-doped graphene
Nano belt and Ohmic electrode isolation.
3. a heterojunction type photoelectric detector based on TiOx nano band, it is characterised in that there is following structure:
Being covered with silicon dioxide layer on the surface of silicon base, on the surface of silicon dioxide layer, tiling has nitrogen-doped graphene, mixes at nitrogen
Being provided with insulating barrier on miscellaneous Graphene, the Dispersion on surface at described insulating barrier has titanium oxide nano belt and described TiOx nano band
A part contact with nitrogen-doped graphene；It is provided with Ohmic electrode, described Ohmic electrode and TiOx nano on the insulating layer
Band is Ohmic contact；
Nitrogen-doped graphene is provided with Ohmic electrode, described Ohmic electrode and insulating barrier, Ohmic electrode and TiOx nano
Band is isolated；
Described TiOx nano band is p-type TiOx nano band；Described nitrogen-doped graphene is N-type nitrogen-doped graphene；
Described Ohmic electrode and Ohmic electrode are gold electrode.
Heterojunction type photoelectric detector based on TiOx nano band the most according to claim 3, it is characterised in that described
Insulating barrier is selected from silicon nitride, oxidation Kazakhstan, zirconium oxide, aluminium oxide or silicon dioxide.
5. a preparation method for the heterojunction type photoelectric detector based on TiOx nano band described in claim 3 or 4, its
It is characterised by, prepares as follows:
Nitrogen-doped graphene is tiled on the silicon dioxide layer of silicon substrate surface, use ultraviolet photolithographic and magnetron sputtering plating skill
Art prepares insulating barrier on the surface of nitrogen-doped graphene, is made by the marginal position that TiOx nano band is distributed on insulating barrier described
TiOx nano, with part and nitrogen-doped graphene overlapping contact, utilizes ultraviolet photolithographic technology and electron beam coating technique absolutely
Preparing Ohmic electrode in edge layer, described Ohmic electrode and described TiOx nano band are Ohmic contact；
On nitrogen-doped graphene, Ohmic electrode, described ohm is prepared again with ultraviolet photolithographic technology and electron beam coating technique
Electrode and insulating barrier, Ohmic electrode and the isolation of TiOx nano band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610504316.3A CN106057961A (en) | 2016-06-28 | 2016-06-28 | Titanium-oxide-nanoband-based heterojunction type photovoltaic detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610504316.3A CN106057961A (en) | 2016-06-28 | 2016-06-28 | Titanium-oxide-nanoband-based heterojunction type photovoltaic detector and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106057961A true CN106057961A (en) | 2016-10-26 |
Family
ID=57200567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610504316.3A Pending CN106057961A (en) | 2016-06-28 | 2016-06-28 | Titanium-oxide-nanoband-based heterojunction type photovoltaic detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106057961A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449858A (en) * | 2016-11-30 | 2017-02-22 | 庞倩桃 | Ultraviolet detector enhanced by zinc oxide quantum dots and method for preparing ultraviolet detector |
| CN106449857A (en) * | 2016-11-25 | 2017-02-22 | 罗雷 | Ultraviolet photoelectric detector based on schottky junction and production method thereof |
| CN106744645A (en) * | 2016-11-30 | 2017-05-31 | 庞倩桃 | A kind of gas sensor and preparation method thereof |
| CN112838136A (en) * | 2020-12-31 | 2021-05-25 | 中北大学 | Ultra-broadband graphene photoelectric detector |
| CN112909119A (en) * | 2021-01-26 | 2021-06-04 | 电子科技大学 | Long-wave flexible infrared detector at room temperature and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610672A (en) * | 2012-03-23 | 2012-07-25 | 合肥工业大学 | Heterojunction type photoelectric detector and manufacturing method thereof |
| CN102856423A (en) * | 2012-09-19 | 2013-01-02 | 合肥工业大学 | Ultraviolet light detector with titanium dioxide nanotube array serving as matrix and preparation method thereof |
| US8384179B2 (en) * | 2010-07-13 | 2013-02-26 | University Of Electronic Science And Technology Of China | Black silicon based metal-semiconductor-metal photodetector |
| CN103346199A (en) * | 2013-07-10 | 2013-10-09 | 合肥工业大学 | Ultraviolet photoelectric detector and preparation method thereof based on single-layer graphene/zinc oxide nano-rod array schottky junction |
| CN104779315A (en) * | 2015-04-08 | 2015-07-15 | 浙江大学 | Graphene/indium phosphide photoelectric detector and preparation method thereof |
-
2016
- 2016-06-28 CN CN201610504316.3A patent/CN106057961A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8384179B2 (en) * | 2010-07-13 | 2013-02-26 | University Of Electronic Science And Technology Of China | Black silicon based metal-semiconductor-metal photodetector |
| CN102610672A (en) * | 2012-03-23 | 2012-07-25 | 合肥工业大学 | Heterojunction type photoelectric detector and manufacturing method thereof |
| CN102856423A (en) * | 2012-09-19 | 2013-01-02 | 合肥工业大学 | Ultraviolet light detector with titanium dioxide nanotube array serving as matrix and preparation method thereof |
| CN103346199A (en) * | 2013-07-10 | 2013-10-09 | 合肥工业大学 | Ultraviolet photoelectric detector and preparation method thereof based on single-layer graphene/zinc oxide nano-rod array schottky junction |
| CN104779315A (en) * | 2015-04-08 | 2015-07-15 | 浙江大学 | Graphene/indium phosphide photoelectric detector and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| 徐蕾: "《负载型多酸光催化材料及应用》", 31 March 2015 * |
| 朱红: "《纳米材料化学及其应用》", 31 August 2009 * |
| 黄显怀: "《TiO2光催化技术及其在环境领域的应用》", 31 March 2013 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449857A (en) * | 2016-11-25 | 2017-02-22 | 罗雷 | Ultraviolet photoelectric detector based on schottky junction and production method thereof |
| CN106449858A (en) * | 2016-11-30 | 2017-02-22 | 庞倩桃 | Ultraviolet detector enhanced by zinc oxide quantum dots and method for preparing ultraviolet detector |
| CN106744645A (en) * | 2016-11-30 | 2017-05-31 | 庞倩桃 | A kind of gas sensor and preparation method thereof |
| CN112838136A (en) * | 2020-12-31 | 2021-05-25 | 中北大学 | Ultra-broadband graphene photoelectric detector |
| CN112838136B (en) * | 2020-12-31 | 2023-03-03 | 中北大学 | Ultra-broadband graphene photoelectric detector |
| CN112909119A (en) * | 2021-01-26 | 2021-06-04 | 电子科技大学 | Long-wave flexible infrared detector at room temperature and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106057961A (en) | Titanium-oxide-nanoband-based heterojunction type photovoltaic detector and preparation method thereof | |
| CN105489693B (en) | Based on the sub- device of two-dimensional layer thin-film material p g n heterojunction photovoltaics | |
| JP5937006B2 (en) | Single or multi-layer graphene-based photodetection device and method of forming the same | |
| CN106531824A (en) | Heterojunction type photoelectric detector and manufacturing method thereof | |
| CN102610672A (en) | Heterojunction type photoelectric detector and manufacturing method thereof | |
| CN105590985B (en) | Based on the sub- device of two-dimentional layer material p i n heterojunction photovoltaics | |
| Kang et al. | n-ZnO: N/p-Si nanowire photodiode prepared by atomic layer deposition | |
| CN109768114A (en) | It is a kind of based on graphene-heterojunction semiconductor position sensitive photodetector | |
| US20170236857A1 (en) | Photoelectric conversion array substrate, its manufacturing method, and photoelectric conversion device | |
| CN109920875A (en) | Solar blind ultraviolet detector, its production method and application | |
| Kim et al. | Highly sensible ZnO nanowire ultraviolet photodetectors based on mechanical schottky contact | |
| Zhu et al. | Self‐Powered InP Nanowire Photodetector for Single‐Photon Level Detection at Room Temperature | |
| CN102694052A (en) | Semiconductor device and manufacturing method thereof | |
| Li et al. | CMOS‐Compatible Tellurium/Silicon Ultra‐Fast Near‐Infrared Photodetector | |
| US11367799B2 (en) | Broadband multi-purpose optical device and methods of manufacturing and operating the same | |
| CN102315330B (en) | Production method for high-sensitiveness ultraviolet detector | |
| Mukhopadhyay et al. | Self-powered ultraviolet photodiode based on lateral polarity structure GaN films | |
| CN107240611A (en) | A kind of photoelectric detector and preparation method thereof, touch base plate and display panel | |
| CN106449858A (en) | Ultraviolet detector enhanced by zinc oxide quantum dots and method for preparing ultraviolet detector | |
| CN106356420A (en) | Heterogenous junction type photoelectric detector and preparation method thereof | |
| CN109244176A (en) | A kind of zero cross-talk HgCdTe infrared focal plane detector of micro- ellipsoid formula | |
| CN102832289B (en) | Based on terahertz imaging device, conversion method that photon frequency is changed | |
| KR20160144654A (en) | photodetector based on silicon nanowire and manufacturing method thereof | |
| CN110161019A (en) | A kind of high sensitive hydrogen sensor and preparation method thereof at room temperature | |
| CN108198894A (en) | A kind of photodiode and preparation method thereof, X-ray detection substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161026 |
|
| WD01 | Invention patent application deemed withdrawn after publication |