CN107195725A - Graphene/TiO2Nano column array schottky junction UV photodetector and preparation method thereof - Google Patents
Graphene/TiO2Nano column array schottky junction UV photodetector and preparation method thereof Download PDFInfo
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- CN107195725A CN107195725A CN201610409776.8A CN201610409776A CN107195725A CN 107195725 A CN107195725 A CN 107195725A CN 201610409776 A CN201610409776 A CN 201610409776A CN 107195725 A CN107195725 A CN 107195725A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 58
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000011521 glass Substances 0.000 claims abstract description 20
- 238000000605 extraction Methods 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000011889 copper foil Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000002061 nanopillar Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 244000062793 Sorghum vulgare Species 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 3
- 235000019713 millet Nutrition 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 8
- 239000002086 nanomaterial Substances 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 239000004408 titanium dioxide Substances 0.000 abstract description 2
- 230000004043 responsiveness Effects 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
The invention discloses a kind of graphene/TiO2Nano column array schottky junction UV photodetector and preparation method thereof, it is to grow to have TiO in the upper surface of FTO glass2Nano column array, array is using FTO as Ohm contact electrode；In TiO2It is in the graphene film of Schottky contacts that the top of nano column array, which is provided with array, and the extraction electrode in Ohmic contact with graphene film is led on graphene film.The UV photodetector of the present invention utilizes the TiO of queueing discipline2Nano column array increases the surface area of material, the good characteristics such as graphene high transmission rate, low-resistivity are utilized simultaneously, enhance the absorption to light, improve the responsiveness to light, device light absorpting ability is strong, sensitive to ultraviolet light induced, electromagnetism interference strong, is that titanium dioxide nano material has opened up new prospect in the application of photodetector.
Description
Technical field
The invention belongs to semiconductor photo detector field, and in particular to graphene/TiO2Nano column array schottky junction UV photodetector and preparation method thereof.
Background technology
Ultraviolet detection technology is the another dual-use detecting technique grown up after infrared and Laser Detection Technique.In recent years, people are growing to the demand of ultraviolet detector.Ultraviolet light detector can be widely used for scientific research, military affairs, space, environmentally friendly and many industrial circles.Such as the ultraviolet optical monitor in space ship, ozone layer solar ultraviolet is monitored, hot background flame detecting, waste gas monitoring etc..In addition, it may also be used for medical science, biology etc., the personal use of the rich ultraviolet environments such as seabeach, high mountain can be used in daily life as ultraviolet quantifier.
Many semi-conducting materials can make ultraviolet detector, mainly including Ge, Si, GaAs, SiC, diamond, III race's Ga base nitrides (GaN/A1GaN) and ZnO etc..The development of traditional si bases detector for a long time, but need additional bulky wave filter to remove visible ray ambient interferences, and can not be competent at high temperature and corrosive atmosphere.In recent years, TiO2It is widely used in the research in the fields such as solar cell, photocatalysis, but the less research for ultraviolet light detector, the TiO with specific structure2Applications to nanostructures is just more rare.TiO2It is used as semiconductor material with wide forbidden band, its energy gap (3.0eV) is as many as 2 times of si, do not responded to (long wave cut-off wavelength is 400nm) in visible ray and infra-red range, this acquires a special sense to detecting ultraviolet light under infrared and visible ray background, and its heat endurance, chemical stability are good.In addition, TiO2It can easily find the backing material of Lattice Matching.These features advantageously reduce the cost of preparation, are also easy to make high performance UV photodetector.Thus, TiO2Base ultraviolet light detector can as ultraviolet detector a new research direction.
Graphene is by a kind of two-dimentional carbon material of the similar phenyl ring (hexagonal honeycomb structure) of the periodically tightly packed structure constituted of single layer of carbon atom.Graphene is to find that they, by peeling off the thin slice for having obtained only being made up of one layer of carbon atom layer by layer to graphite flake, were exactly graphene at that time first by two scientists of graceful Chester university of Britain.Graphene is most thin, the most hard nano material in known world, and it is almost fully transparent, only absorbs 2.3% light；Thermal conductivity factor is up to 5300W/mK, higher than CNT and diamond, and its electron mobility is more than 15000cm under normal temperature2/ Vs, but it is higher than CNT or silicon crystal, and resistivity about 10-8Ω m, it is lower than copper or silver, it is the minimum material of world resistivity.Due to its exclusive characteristic, graphene is referred to as " magical material ", and scientist even foretells that it " will thoroughly change 21 century ".Due to characteristics such as high conductivity, high intensity, ultra-thins, graphene is also extremely prominent in the application advantage of space flight military industry field.U.S. NASA develops the graphene sensor applied to space industry, micro-, spaceborne structural defect of earth upper atmosphere etc. can be detected well, and graphene also played an important role in the application of ultra light aircraft Material Field.Because its resistivity is extremely low, electron transfer speed is exceedingly fast, therefore it is expected to can be used to develop thinner, conductive speed electronic component or transistor of new generation faster.
The content of the invention
The present invention is to avoid the weak point present in above-mentioned prior art, make full use of specific titanium dioxide nanostructure, and there is provided a kind of preparation technology is simple, light absorpting ability is strong, graphene/TiO sensitive to ultraviolet light induced and strong anti-electromagnetic interference capability for the characteristic of graphene this new two-dimension nano materials2Nano column array schottky junction UV photodetector.
The present invention adopts the following technical scheme that to realize goal of the invention：
Graphene/TiO of the present invention2Nano column array schottky junction UV photodetector, its feature is：The UV photodetector is to grow to have TiO in the upper surface of FTO glass2Nano column array, the TiO2Nano column array is using FTO as Ohm contact electrode；In the TiO2The top of nano column array is provided with and the TiO2Nano column array is in the graphene film of Schottky contacts, and the extraction electrode in Ohmic contact with graphene film is led on the graphene film.Extraction electrode and TiO2Nano column array is not contacted, and graphene film is not contacted with FTO.
Specifically, the TiO2Nano column array is n-type TiO2；The TiO2Nano column array is made using hydro-thermal method, and thing is mutually Rutile Type.The graphene film is intrinsic graphene film.
The thickness of the FTO glass is that 2.2mm, light transmittance are 14 Ω more than 90%, surface resistance.
The TiO2Each TiO in nano column array2Nano-pillar cross section is square, 100~200nm of the length of side；Each TiO2The height of nano-pillar is 1~2 μm.
Above-mentioned graphene/the TiO of the present invention2The preparation method of nano column array schottky junction UV photodetector, is to carry out as follows：
(1) FTO glass is cleaned by ultrasonic with acetone, alcohol, deionized water successively, then dried up with nitrogen gun, it is standby；
(2) 25mL deionized water is added in beaker, the HCl that 25mL mass concentrations are 37%, magnetic agitation 10 minutes is then added；0.2mL titanium tetrachloride is added as titanium source, stirs 30 minutes, obtains mixed liquor；In the water heating kettle that the mixed liquor is moved into 100mL, liquid is no more than the 2/3 of water heating kettle volume；
In the side covering high-temperature adhesive tape of FTO glass top surfaces, then FTO glass down and is formed an angle and stood on the inwall of water heating kettle with upper surface, is completely submerged in mixed liquor；Water heating kettle is put into 180 DEG C of baking ovens and reacted 2 hours, room temperature is subsequently cooled to；
Take out sample, high temperature gummed tape is taken off, cleaned with deionized water, then 60 DEG C of drys 1h, then place into annealing furnace 500 DEG C and anneal 2 hours, i.e. completion FTO glass top surfaces TiO2The growth of nano column array；The purpose of annealing is to complete phase transition, obtains the TiO of Rutile Type2Nano column array；
(3) TiO is used as using FTO2The Ohm contact electrode of nano column array, high temperature gummed tape overlay area does not generate contact zone during array, as later stage electric performance test；
(4) take superficial growth to have the copper foil of graphene, copper foil substrate is etched away by etching liquid, obtain graphene film；The graphene film is transferred to by TiO by wet method transfer2The surface of nano column array, and without departing from TiO2Nano column array region, is then dried in insulating box；
(5) graphene/TiO is produced as extraction electrode in graphene film upper table millet cake silver paste2Nano column array schottky junction UV photodetector.
The UV photodetector of the present invention is to be based on graphene/TiO2The photoelectric characteristic for the schottky junction that nano column array is formed, concrete operating principle is as follows：Device is with TiO2The schottky junction that nano column array and graphene film are formed is core, utilizes TiO2The absworption peak (i.e. ultraviolet light, wavelength about 365nm) to light that band gap itself is determined, so as to present absorbability of the whole device to ultraviolet light.Compared to general body material, TiO2Nano column array has bigger specific surface area, and absorption incident light that can be bigger forms enhanced photoelectric current, and then strengthen the photoelectric characteristic of device.The intrinsic graphene film that the present invention is prepared using CVD method, is weak p-type metalloid material, graphene and TiO2Nano column array formation Schottky hetero-junctions.Intrinsic method for preparing graphene membrane is simple, and condition is easily controlled, convenient to mass produce later.The present invention is using simple strategy, to reach the purpose for improving device performance, is to prepare the pretty good approach of photoelectric device in future.
Compared with the prior art, beneficial effects of the present invention are embodied in：
1st, the present invention is prepared for graphene/TiO by simple process2Nano column array schottky junction UV photodetector, into the device of knot, TiO can either be made full use of compared to metal2Nano column array combines the good characteristics such as graphene high transmission rate, low-resistivity, obtained device superior performance again to the absorption characteristic of ultraviolet light；
2nd, the TiO that the present invention is synthesized using hydro-thermal method2Nano column array, it is marshalling, uniform in size, bigger specific surface area is made it have, and because its surfacing can be good at contacting with graphene；
Brief description of the drawings
Fig. 1 is graphene/TiO of the present invention2The structural representation of the schottky junction UV photodetector of nano column array；
Fig. 2 is TiO in the embodiment of the present invention 12The SEM figures of nano column array, wherein (a) is TiO2The side SEM figures of nano column array, (b) is TiO2The top SEM figures of nano column array；(b) illustration is the TiO of high magnification numbe in2The top SEM figures of nano column array, it can be seen that the array is column.
Fig. 3 is the absorption spectrum curve of UV photodetector sample in the embodiment of the present invention 1；As can be seen from the figure the absworption peak for being FTO in 230nm or so absworption peak, 270nm or so absworption peak is substantially to be absorbed as TiO in the range of the absworption peak of graphene, wavelength 320-400nm2Absworption peak.
Fig. 4 is that current-voltage relation characteristic of the UV photodetector sample under dark condition bent (a) is in the embodiment of the present invention 1, and the current-voltage relation characteristic curve (b) under ultraviolet light (wavelength is 365nm) irradiation, adding from (b) it can be seen from the figure that after light has obvious photoresponse.
Fig. 5 is the current-vs-time characteristic of UV photodetector sample respectively in the case where dark and ultraviolet light (wavelength is 365nm) irradiates in the embodiment of the present invention 1；Wherein plus light state represents additional 365nm ultraviolet light, no light condition represents to be in dark state.
Label in figure：1 is FTO glass；2 be TiO2Nano column array；3 be graphene film；4 be extraction electrode.
Embodiment
Embodiment 1
Referring to Fig. 1, the graphene/TiO of the present embodiment2Nano column array schottky junction UV photodetector has following structure：
There is TiO in the upper surface growth of FTO glass 12Nano column array 2, TiO2Nano column array is using FTO as Ohm contact electrode；In TiO2The top of nano column array 2 is provided with and TiO2Nano column array 2 is in the graphene film 3 of Schottky contacts, and the extraction electrode 4 in Ohmic contact with graphene film is led on graphene film 3.
Wherein：TiO2Nano column array is n-type TiO2；Graphene film is the intrinsic graphene film prepared using CVD method.The thickness of FTO glass used is that 2.2mm, light transmittance are 14 Ω more than 90%, surface resistance.
Graphene/the TiO of the present embodiment2The preparation method of nano column array schottky junction UV photodetector, is to carry out as follows：
(1) it is FTO glass is ultrasonic 10 minutes with acetone, alcohol then ultrasonic 5 minutes with deionized water successively, then dried up with nitrogen gun, it is standby；
(2) 25mL deionized water is added in beaker, the HCl that 25mL mass concentrations are 37% is then added, the magneton cleaned up is put into and stirs 10 minutes；0.2mL titanium tetrachloride is added as titanium source, stirs 30 minutes, obtains mixed liquor；In the water heating kettle that mixed liquor is moved into 100mL；
In the side covering high-temperature adhesive tape of FTO glass top surfaces, then FTO glass down and is formed an angle and stood on the inwall of water heating kettle with upper surface, is completely submerged in mixed liquor；Water heating kettle is put into 180 DEG C of baking ovens to react 2 hours, room temperature is subsequently cooled to；
Take out sample, high temperature gummed tape is taken off, cleaned with deionized water, then 60 DEG C of drys 1h, then place into annealing furnace 500 DEG C and anneal 2 hours, i.e. completion FTO glass top surfaces TiO2The growth of nano column array；
Fig. 2 is the TiO prepared by the present embodiment2The SEM figures of nano column array, wherein (a) is TiO2The side SEM figures of nano column array, (b) is TiO2The top SEM figures of nano column array；(b) illustration is the TiO of high magnification numbe in2The top SEM figures of nano column array, it can be seen that the array is column.Each TiO in array2Nano-pillar cross section is square, length of side 150nm or so；Each TiO2About 1.5 μm of the height of nano-pillar.
(3) TiO is used as using FTO2The Ohm contact electrode of nano column array；
(4) take superficial growth to have the copper foil of graphene, copper foil substrate is etched away by etching liquid, obtain graphene film；Graphene film is transferred to by TiO by wet method transfer2The surface of nano column array, and without departing from TiO2Nano column array region, and dried in insulating box；
(5) graphene/TiO is produced as extraction electrode in graphene film upper table millet cake silver paste2Nano column array schottky junction UV photodetector.
The spectral response curve of UV photodetector sample is as shown in Figure 3 obtained by the present embodiment, current-voltage relation characteristic curve is as shown in figure 4, current-vs-time characteristic is as shown in Figure 5 under (a) and ultraviolet light (b) irradiate under dark.
As can be seen from Figure 3 the peak in the spectral response of sample is located approximately at 365nm, and it has corresponded to TiO2Energy gap (3.0eV), and spectral response ended at 400nm.The detector that the present embodiment is can be seen that from spectral response curve is really UV photodetector, it is also seen that the UV photodetector of the present embodiment has at a relatively high spectral selection.From fig. 4, it can be seen that sample is under 2V biass, dark current only has 1.94 × 10-6A, and electric current has reached 2.19 × 10 under ultraviolet lighting-4A.From fig. 5, it can be seen that the saturation current of sample is larger, 3.82 × 10 are reached-4A。
Claims (6)
1. graphene/TiO2Nano column array schottky junction UV photodetector, it is characterised in that：The ultraviolet photoelectric detection
Device is to grow to have TiO in the upper surface of FTO glass (1)2Nano column array (2), the TiO2Nano column array is with FTO
For Ohm contact electrode；
In the TiO2The top of nano column array (2) is provided with and the TiO2Nano column array (2) is in Schottky contacts
Graphene film (3), leads to the extraction electrode (4) in Ohmic contact with graphene film on the graphene film (3).
2. graphene/TiO according to claim 12Nano column array schottky junction UV photodetector, its feature exists
In：The TiO2Nano column array is n-type TiO2；The graphene film is intrinsic graphene film.
3. graphene/TiO according to claim 12Nano column array schottky junction UV photodetector, its feature exists
In：The thickness of the FTO glass is that 2.2mm, light transmittance are 14 Ω more than 90%, surface resistance.
4. graphene/TiO according to claim 12Nano column array schottky junction UV photodetector, its feature exists
In：The TiO2Nano column array is made using hydro-thermal method, and thing is mutually Rutile Type.
5. graphene/TiO according to claim 12Nano column array schottky junction UV photodetector, its feature exists
In：The TiO2Each TiO in nano column array2Nano-pillar cross section is square, 100~200nm of the length of side；Each TiO2Nano-pillar
Height be 1~2 μm.
6. graphene/TiO in a kind of Claims 1 to 5 described in any one2Nano column array schottky junction ultraviolet photoelectric detection
The preparation method of device, it is characterized in that carrying out as follows：
(1) FTO glass is cleaned by ultrasonic with acetone, alcohol, deionized water successively, then dried up with nitrogen gun, it is standby；
(2) 25mL deionized water is added in beaker, the HCl that 25mL mass concentrations are 37%, magnetic force is then added
Stirring 10 minutes；0.2mL titanium tetrachloride is added as titanium source, stirs 30 minutes, obtains mixed liquor；By the mixing
Liquid is moved into 100mL water heating kettle；
In the side covering high-temperature adhesive tape of FTO glass top surfaces, then by FTO glass with upper surface down and into a clamp
Angle is stood on the inwall of water heating kettle, is completely submerged in mixed liquor；Water heating kettle is put into reaction 2 hours in 180 DEG C of baking ovens, so
After be cooled to room temperature；
Sample is taken out, high temperature gummed tape is taken off, cleaned with deionized water, then 60 DEG C of dry 1h, then place into annealing furnace
500 DEG C are annealed 2 hours, that is, complete FTO glass top surfaces TiO2The growth of nano column array；
(3) TiO is used as using FTO2The Ohm contact electrode of nano column array；
(4) take superficial growth to have the copper foil of graphene, copper foil substrate is etched away by etching liquid, obtain graphene film；Pass through
The graphene film is transferred to TiO by wet method transfer2The surface of nano column array, and without departing from TiO2Nano column array location
Domain, is then dried in insulating box；
(5) graphene/TiO is produced as extraction electrode in graphene film upper table millet cake silver paste2Nano column array schottky junction
UV photodetector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610409776.8A CN107195725A (en) | 2016-06-03 | 2016-06-03 | Graphene/TiO2Nano column array schottky junction UV photodetector and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610409776.8A CN107195725A (en) | 2016-06-03 | 2016-06-03 | Graphene/TiO2Nano column array schottky junction UV photodetector and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN107195725A true CN107195725A (en) | 2017-09-22 |
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Cited By (7)
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| CN108615783A (en) * | 2018-04-19 | 2018-10-02 | 中芯集成电路（宁波）有限公司 | A kind of Schottky ultraviolet detector and its manufacturing method |
| CN110085688A (en) * | 2019-05-13 | 2019-08-02 | 北京镓族科技有限公司 | Self-powered type photodetection structure, device and the preparation method mutually tied based on graphene-gallium oxide |
| CN110779958A (en) * | 2019-10-31 | 2020-02-11 | 山东交通学院 | Ship tail gas sensing material and preparation process thereof |
| CN110797423A (en) * | 2019-11-05 | 2020-02-14 | 太原理工大学 | Gold/titanium dioxide Schottky junction thermal electron photoelectric detector and preparation method thereof |
| CN111048620A (en) * | 2019-11-20 | 2020-04-21 | 电子科技大学 | Ultraviolet photoelectric detector based on titanium dioxide nanotube and graphene heterojunction and preparation method thereof |
| CN112838136A (en) * | 2020-12-31 | 2021-05-25 | 中北大学 | Ultra-broadband graphene photoelectric detector |
| CN114171609A (en) * | 2021-12-02 | 2022-03-11 | 深圳技术大学 | Heterojunction enhanced ultraviolet visible light detector and preparation method and equipment thereof |
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| CN102280268A (en) * | 2011-05-24 | 2011-12-14 | 湖北大学 | Double-layer structured photoanode of dye-sensitized solar cell and preparation method thereof |
| CN102856423A (en) * | 2012-09-19 | 2013-01-02 | 合肥工业大学 | Ultraviolet light detector with titanium dioxide nanotube array serving as matrix and preparation method thereof |
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| CN102208479A (en) * | 2011-05-20 | 2011-10-05 | 大连海事大学 | Nano coaxial-cable heterojunction array base ultraviolet detector and manufacturing method thereof |
| CN102280268A (en) * | 2011-05-24 | 2011-12-14 | 湖北大学 | Double-layer structured photoanode of dye-sensitized solar cell and preparation method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615783A (en) * | 2018-04-19 | 2018-10-02 | 中芯集成电路（宁波）有限公司 | A kind of Schottky ultraviolet detector and its manufacturing method |
| CN110085688A (en) * | 2019-05-13 | 2019-08-02 | 北京镓族科技有限公司 | Self-powered type photodetection structure, device and the preparation method mutually tied based on graphene-gallium oxide |
| CN110779958A (en) * | 2019-10-31 | 2020-02-11 | 山东交通学院 | Ship tail gas sensing material and preparation process thereof |
| CN110797423A (en) * | 2019-11-05 | 2020-02-14 | 太原理工大学 | Gold/titanium dioxide Schottky junction thermal electron photoelectric detector and preparation method thereof |
| CN111048620A (en) * | 2019-11-20 | 2020-04-21 | 电子科技大学 | Ultraviolet photoelectric detector based on titanium dioxide nanotube and graphene heterojunction and preparation method thereof |
| CN112838136A (en) * | 2020-12-31 | 2021-05-25 | 中北大学 | Ultra-broadband graphene photoelectric detector |
| CN112838136B (en) * | 2020-12-31 | 2023-03-03 | 中北大学 | Ultra-broadband graphene photoelectric detector |
| CN114171609A (en) * | 2021-12-02 | 2022-03-11 | 深圳技术大学 | Heterojunction enhanced ultraviolet visible light detector and preparation method and equipment thereof |
| CN114171609B (en) * | 2021-12-02 | 2023-10-20 | 深圳技术大学 | Heterojunction enhanced ultraviolet-visible light detector and preparation method and equipment thereof |
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