CN108231945A - Graphene/hexagonal boron nitride/graphene ultraviolet light detector and preparation method - Google Patents
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- CN108231945A CN108231945A CN201810004657.3A CN201810004657A CN108231945A CN 108231945 A CN108231945 A CN 108231945A CN 201810004657 A CN201810004657 A CN 201810004657A CN 108231945 A CN108231945 A CN 108231945A
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 128
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 127
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 56
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052796 boron Inorganic materials 0.000 claims abstract description 14
- 238000009413 insulation Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 13
- 229910052723 transition metal Inorganic materials 0.000 claims description 9
- 150000003624 transition metals Chemical class 0.000 claims description 9
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 8
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 235000008331 Pinus X rigitaeda Nutrition 0.000 claims description 2
- 235000011613 Pinus brutia Nutrition 0.000 claims description 2
- 241000018646 Pinus brutia Species 0.000 claims description 2
- 150000001336 alkenes Chemical class 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 3
- 230000004043 responsiveness Effects 0.000 abstract description 3
- 239000010936 titanium Substances 0.000 description 5
- 230000007812 deficiency Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- -1 Graphite Alkene Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002135 nanosheet Substances 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of graphene/hexagonal boron nitride/graphene ultraviolet light detector, including：One substrate；One insulating layer makes on substrate, plays the role of insulation；One first graphene layer, makes intermediate position on the insulating layer, which is strip；One hexagonal boron is produced on the side on the first graphene layer, and covering part insulating layer；One second graphene layer, is produced on hexagonal boron, and covering part insulating layer；One first electrode, make on the insulating layer, and with the end thereof contacts of the first graphene layer；One second electrode, make on the insulating layer, and with the end thereof contacts of the second graphene layer.The invention can ensure that device has high response speed and responsiveness, while using longitudinal device architecture, improve the integrated level of device.
Description
Technical field
The invention belongs to two-dimensional material applied technical fields, are related to a kind of graphene/hexagonal boron nitride/graphene ultraviolet light
Detector and preparation method.
Background technology
With the discovery of graphene, two-dimensional material is more and more paid close attention to by people, become present material field most by
One of hot spot of concern.Compared with body material, two-dimensional material has high specific surface area and excellent electricity, optical characteristics,
Have broad application prospects in fields such as high-speed electronic components, light emitting diode, optical detector, solar cells.Six sides nitrogenize
Boron, the isolog of graphene have many advantages, such as high band edge absorption coefficient, loose band gap (5.9eV), high thermal conductivity,
It is considered as a kind of excellent deep ultraviolet light detection material.Recently, Sajjad et al. is reported based on hexagonal boron nitride nanosheet
Photoconduction type deep ultraviolet detector, show excellent spectrum-selectivity characteristic.However, it is visited with certain high-performance deep ultraviolet light
It surveys device to compare, the response speed of the hexagonal boron nitride ultraviolet light detector is slower, and responsiveness is relatively low, is also difficult to meet practical application
Needs.Deficiency of the hexagonal boron nitride deep ultraviolet light detector in performance can be attributed to hexagonal boron nitride weak carrier point
From with transport capability.Research shows that structure heterojunction structure can realize the quick separating of photo-generated carrier in two-dimensional material.Graphite
Alkene is as a kind of material for possessing high carrier mobility, it is considered to be a kind of excellent carrier-transporting material.In addition, stone
Black alkene is isolog with hexagonal boron nitride, and lattice mismatch is only 1.8%, is conducive to graphene/hexagonal boron nitride/graphene three
The structure of Mingzhi's structure makes up the deficiency of hexagonal boron nitride performance, promotes the performance of boron nitride ultraviolet light detector.
Invention content
The object of the present invention is to provide a kind of graphene/hexagonal boron nitride/graphene ultraviolet light detector and preparation sides
Method can ensure that device has high response speed and responsiveness, while using longitudinal device architecture, improves the integrated of device
Degree.
To achieve the above objectives, the present invention provides a kind of graphene/hexagonal boron nitride/graphene ultraviolet light detector, packet
It includes：
One substrate；
One insulating layer makes on substrate, plays the role of insulation；
One first graphene layer, makes intermediate position on the insulating layer, which is strip；
One hexagonal boron is produced on the side on the first graphene layer, and covering part insulating layer；
One second graphene layer, is produced on hexagonal boron, and covering part insulating layer；
One first electrode, make on the insulating layer, and with the end thereof contacts of the first graphene layer；
One second electrode, is produced on the insulating layer, and with the end thereof contacts of the second graphene layer.
2. graphene/hexagonal boron nitride according to claim 1/graphene ultraviolet light detector, wherein the lining
The material at bottom is the monocrystalline silicon of heavy doping.
3. the ultraviolet light detector of graphene/hexagonal boron nitride/graphene according to claim 1, wherein described
The material of insulating layer is silica.
4. the ultraviolet light detector of graphene/hexagonal boron nitride/graphene according to claim 1, wherein described
First, second graphene layer is individual layer or a small number of multilayers, and the thickness of the hexagonal boron is 1-20 nanometers.
5. the ultraviolet light detector of graphene/hexagonal boron nitride/graphene according to claim 1, wherein described
The material of first electrode and second electrode is Ti, Cr, Au or Ag, and thickness is 100-200 nanometers.
The present invention also provides a kind of preparation method of graphene/hexagonal boron nitride/graphene ultraviolet light detector, including with
Lower step：
Step 1：The graphene of individual layer and a small number of multilayers is prepared on transition metal using chemical vapour deposition technique；
Step 2：Multilayer hexagonal boron nitride film is prepared on another transition metal using Assisted by Ion Beam sputtering method；
Step 3：One layer of rosin of spin coating on graphene removes transition metal layer by wet etching, only retains graphene
And rosin；
Step 4：Then transfer graphene on the insulating layer on substrate, and the pine of graphene surface is washed with acetone
It is fragrant；
Step 5：Using to step 3 to the similar method of step 4, hexagonal boron nitride and the are shifted on the first graphene
Two graphenes, the structure graphene-structured of the first graphene/hexagonal boron nitride/second；
Step 6：One end deposition of first electrode on the first graphene；
Step 7：One end deposition second electrode on the second graphene.
It can be seen from the above technical proposal that a kind of graphene/hexagonal boron nitride/graphene ultraviolet light proposed by the present invention
Detector and preparation method have the advantages that：
Graphene has high carrier mobility and high light transmission rate, graphene is combined with hexagonal boron nitride, structure
Graphene/hexagonal boron nitride/graphene is built, carrier fill level in graphene is adjusted by applied voltage, it can not only be real
The quick separating of existing photo-generate electron-hole pair can also greatly improve the transport efficiency of carrier.As shown in figure 3, in grid voltage
Under effect, the carrier filling situation of graphene will change, so as to form energy in graphene/hexagonal boron nitride/graphene
Band gradient.Under illumination condition, electron hole pair is generated in hexagonal boron nitride, carrier shifts under the action of electric field,
Realize the separation of carrier.Therefore, graphene/hexagonal boron nitride/graphene heterojunction structure is expected to make up hexagonal boron nitride ultraviolet
The deficiency of detector, it is whole to promote device performance.
Description of the drawings
For the technology contents further illustrated the present invention, with reference to embodiments and attached drawing is described in detail as after, wherein：
Fig. 1 is the structure diagram of graphene/hexagonal boron nitride/graphene ultraviolet light detector；
Fig. 2 is flow chart of the method for the present invention；
Fig. 3 is graphene/hexagonal boron nitride/graphene heterostructure band schematic diagram after applying grid voltage to the structure of Fig. 1.
Specific embodiment
Refering to Figure 1, the present invention provides a kind of ultraviolet light detector of graphene/hexagonal boron nitride/graphene, packet
It includes：
One substrate 10, the material of the substrate 10 are the monocrystalline silicon of heavy doping, as the gate electrode of optical detector, realization pair
The adjusting of graphene, hexagonal boron nitride carrier fill level；
One insulating layer 20 makes over the substrate 10, plays the role of insulation, the material of the insulating layer 20 is titanium dioxide
Silicon；
One first graphene layer 30 is produced on the intermediate position on insulating layer 20, which is strip,
First graphene layer 30 is individual layer or a small number of multilayers, and main function is to form heterojunction structure with hexagonal boron nitride, so as to real
The quick separating of photo-generated carrier in existing hexagonal boron nitride；
One hexagonal boron 40 is produced on the side on the first graphene layer 30, and covering part insulating layer 20, institute
The thickness for stating hexagonal boron 40 is 1-20 nanometers, and hexagonal boron nitride is wide bandgap semiconductor, there is very strong light absorpting ability,
Photo-generate electron-hole pair is generated after absorbing ultraviolet light, the detection to ultraviolet light is realized in conductive capability enhancing；
One second graphene layer 50, is produced on hexagonal boron 40, and covering part insulating layer 20, and described second
Graphene layer 50 is individual layer or a small number of multilayers, and on the one hand the second layer graphene can form heterojunction structure with hexagonal boron nitride, real
The transfer of existing carrier, is on the other hand also used as transparent electrode, and the absorption to ultraviolet light is reduced while conduction；
One first electrode 60, is produced on insulating layer 20, and with the end thereof contacts of the first graphene layer 30, described first
The material of electrode 60 is Ti, Cr, Au or Ag, and thickness is 100-200 nanometers；
One second electrode 70, is produced on insulating layer 20, and with the end thereof contacts of the second graphene layer 50, described
The material of two electrodes 70 is Ti, Cr, Au or Ag, and thickness is 100-200 nanometers.
It please refers to Fig. 2 and combination is as shown in fig.1, a kind of graphene/hexagonal boron nitride/graphene of present invention offer is heterogeneous
Ultraviolet detector preparation method, include the following steps：
Step 1：The graphene of individual layer and a small number of multilayers is prepared in transition metal using chemical vapour deposition technique, was grown
By adjusting the thickness of graphene and domain size prepared by growth temperature and growth time adjusting in journey；
Step 2：Multilayer hexagonal boron nitride film is prepared on another transition metal using Assisted by Ion Beam sputtering method, is grown
In the process by adjusting the thickness of hexagonal boron nitride and domain size prepared by growth temperature and growth time adjusting；
Step 3：One layer of rosin of spin coating on graphene removes transition metal layer by wet etching, only retains graphene
And rosin, graphene and rosin is cleaned multiple times using deionized water, removes remaining corrosive liquid；
Step 4：Then transfer graphene on the insulating layer 20 on substrate 10, and graphene surface is washed with acetone
Rosin, the material of the substrate 10 is the monocrystalline silicon of heavy doping, and the material of the insulating layer 20 is silica；
Step 5：Using to step 3 to the similar method of step 4, shifted on the first graphene 30 hexagonal boron nitride 40 with
And second graphene 50,30/ 40/ second graphene of hexagonal boron nitride of the first graphene of structure, 50 structure ensure in transfer process
There are hexagonal boron nitride interval, first, second graphene among first graphene layer and the second graphene layer overlapping region
Layer 30,50 is individual layer or a small number of multilayers, and the thickness of the hexagonal boron 40 is 1-20 nanometers；
Step 6：One end deposition of first electrode 60 on the first graphene 30, the material of the first electrode 60 is Ti,
Cr, Au or Ag, thickness are 100-200 nanometers；
Step 7：One end deposition second electrode 70 on the second graphene 50, the material of the second electrode 70 is Ti,
Cr, Au or Ag, thickness are 100-200 nanometers.
Particular embodiments described above has carried out the purpose of the present invention, technical solution and advantageous effect further in detail
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the present invention
Within the scope of shield.
Claims (10)
1. a kind of graphene/hexagonal boron nitride/graphene ultraviolet light detector, including：
One substrate；
One insulating layer makes on substrate, plays the role of insulation；
One first graphene layer, makes intermediate position on the insulating layer, which is strip；
One hexagonal boron is produced on the side on the first graphene layer, and covering part insulating layer；
One second graphene layer, is produced on hexagonal boron, and covering part insulating layer；
One first electrode, make on the insulating layer, and with the end thereof contacts of the first graphene layer；
One second electrode, is produced on the insulating layer, and with the end thereof contacts of the second graphene layer.
2. graphene/hexagonal boron nitride according to claim 1/graphene ultraviolet light detector, wherein the substrate
Material is the monocrystalline silicon of heavy doping.
3. the ultraviolet light detector of graphene/hexagonal boron nitride/graphene according to claim 1, wherein the insulation
The material of layer is silica.
4. the ultraviolet light detector of graphene/hexagonal boron nitride/graphene according to claim 1, wherein described first,
Second graphene layer is individual layer or a small number of multilayers, and the thickness of the hexagonal boron is 1-20 nanometers.
5. the ultraviolet light detector of graphene/hexagonal boron nitride/graphene according to claim 1, wherein described first
Electrode and the material of second electrode are Ti, Cr, Au or Ag, and thickness is 100-200 nanometers.
6. a kind of preparation method of graphene/hexagonal boron nitride/graphene ultraviolet light detector, includes the following steps：
Step 1：The graphene of individual layer and a small number of multilayers is prepared on transition metal using chemical vapour deposition technique；
Step 2：Multilayer hexagonal boron nitride film is prepared on another transition metal using Assisted by Ion Beam sputtering method；
Step 3：One layer of rosin of spin coating on graphene removes transition metal layer by wet etching, only retains graphene and pine
It is fragrant；
Step 4：Then transfer graphene on the insulating layer on substrate, and the rosin of graphene surface is washed with acetone；
Step 5：Using to step 3 to the similar method of step 4, hexagonal boron nitride and the second stone are shifted on the first graphene
Black alkene, the structure graphene-structured of the first graphene/hexagonal boron nitride/second；
Step 6：One end deposition of first electrode on the first graphene；
Step 7：One end deposition second electrode on the second graphene.
7. the preparation method of the ultraviolet light detector of graphene/hexagonal boron nitride/graphene according to claim 6,
Described in substrate material be heavy doping monocrystalline silicon.
8. the preparation method of graphene/hexagonal boron nitride according to claim 6/graphene ultraviolet light detector, wherein
The material of the insulating layer is silica.
9. the preparation method of the ultraviolet light detector of graphene/hexagonal boron nitride/graphene according to claim 6,
Described in first, second graphene layer be individual layer or a small number of multilayer, the thickness of the hexagonal boron is 1-20 nanometers.
10. the preparation method of the ultraviolet light detector of graphene/hexagonal boron nitride/graphene according to claim 6,
Described in the material of first electrode and second electrode be Ti, Cr, Au or Ag, thickness be 100-200 nanometers.
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| CN111244222A (en) * | 2020-01-20 | 2020-06-05 | 中国科学院半导体研究所 | Hexagonal boron nitride ultraviolet light detector and preparation method thereof |
| CN111710750A (en) * | 2020-06-24 | 2020-09-25 | 吉林大学 | Deep ultraviolet photoelectric detector based on hexagonal boron nitride thick film and preparation method |
| WO2020243118A1 (en) * | 2019-05-24 | 2020-12-03 | Seven Z's Trust | Solar energy processing unit |
| CN114551626A (en) * | 2022-02-22 | 2022-05-27 | 吉林大学 | Deep ultraviolet photoelectric detector and preparation method and application thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020243118A1 (en) * | 2019-05-24 | 2020-12-03 | Seven Z's Trust | Solar energy processing unit |
| CN112714961A (en) * | 2019-05-24 | 2021-04-27 | 塞文Z`S崔斯特公司 | Solar energy processing unit |
| CN111244222A (en) * | 2020-01-20 | 2020-06-05 | 中国科学院半导体研究所 | Hexagonal boron nitride ultraviolet light detector and preparation method thereof |
| CN111710750A (en) * | 2020-06-24 | 2020-09-25 | 吉林大学 | Deep ultraviolet photoelectric detector based on hexagonal boron nitride thick film and preparation method |
| CN111710750B (en) * | 2020-06-24 | 2022-12-13 | 吉林大学 | Deep ultraviolet photoelectric detector based on hexagonal boron nitride thick film and preparation method |
| CN114551626A (en) * | 2022-02-22 | 2022-05-27 | 吉林大学 | Deep ultraviolet photoelectric detector and preparation method and application thereof |
| CN114551626B (en) * | 2022-02-22 | 2024-01-26 | 吉林大学 | Deep ultraviolet photoelectric detector and preparation method and application thereof |
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Application publication date: 20180629 |