CN112786422B - Focusing ring, plasma processor and method - Google Patents
Focusing ring, plasma processor and method Download PDFInfo
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- CN112786422B CN112786422B CN201911089041.1A CN201911089041A CN112786422B CN 112786422 B CN112786422 B CN 112786422B CN 201911089041 A CN201911089041 A CN 201911089041A CN 112786422 B CN112786422 B CN 112786422B
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- focus ring
- heat exchange
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 128
- 238000001816 cooling Methods 0.000 claims abstract description 53
- 238000006243 chemical reaction Methods 0.000 claims abstract description 32
- 239000000110 cooling liquid Substances 0.000 claims abstract description 25
- 230000000694 effects Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 8
- 230000002708 enhancing effect Effects 0.000 claims description 7
- 239000012809 cooling fluid Substances 0.000 claims description 6
- 239000013536 elastomeric material Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 21
- 239000002826 coolant Substances 0.000 description 12
- 239000007779 soft material Substances 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000013013 elastic material Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- -1 perfluoro Chemical group 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
The invention discloses a focusing ring, a plasma processor and a method, wherein the plasma processor comprises a reaction cavity, an electrostatic chuck is arranged in the reaction cavity and used for supporting a substrate, the focusing ring is arranged around the periphery of the electrostatic chuck, the focusing ring with adjustable temperature comprises an inner side area positioned below the substrate and an outer side area surrounding the inner side area through heat exchange, a heat conduction part is arranged above the inner side area, and when the substrate is adsorbed by the electrostatic chuck, the back surface of the substrate is contacted with the heat conduction part. According to the invention, the cooling channel is arranged in the focusing ring or between the focusing ring and the inserting ring or in the inserting ring or at other corresponding positions, so that the cooling liquid flows to cool the focusing ring, and meanwhile, the heat conduction part is arranged between the substrate and the focusing ring, so that the heat conduction efficiency between the focusing ring and the substrate is enhanced, the etching rate of the edge of the substrate is improved, and the uniformity of the etching rate of the substrate is further improved.
Description
Technical Field
The invention relates to the field of plasma etching, in particular to a focusing ring based on a cooling system, a plasma processor and a method.
Background
In the prior art, a temperature-controllable electrostatic chuck (Electrostatic chuck, abbreviated as ESC) is commonly used in plasma processing equipment to control the temperature of a substrate (Wafer). The substrate is typically larger in size than the electrostatic chuck, resulting in an edge temperature of the substrate that is not controllable.
In the etching process, the temperature of a Focus Ring (Focus Ring) close to the edge of the substrate is increased, the Focus Ring and an insert Ring below the Focus Ring in the prior art do not have a cooling function, so that the temperature non-uniformity of the middle and edge of the substrate can cause different etching rates at the two positions, and the etching rate of the substrate is reduced along with the increase of the temperature, so that the phenomenon that the etching rate of the substrate is low due to the fact that the middle high edge is presented.
Accordingly, there is a need to develop a plasma processor that improves etch rate non-uniformity of a substrate by cooling a focus ring.
Disclosure of Invention
The invention aims to provide a focusing ring, a plasma processor and a method, wherein a cooling channel for cooling liquid circulation is arranged in the focusing ring and used for cooling the focusing ring, and a heat conduction component can be arranged between a substrate and the focusing ring, so that the heat conduction efficiency between the focusing ring and the substrate is enhanced by utilizing the heat conduction effect, the etching rate of the edge of the substrate is improved, and the uniformity of the etching rate of the substrate is further improved.
In order to achieve the above purpose, the present invention is realized by the following technical scheme: a focus ring for a plasma processor, the plasma processor comprising a reaction chamber, an electrostatic chuck disposed in the reaction chamber for supporting a substrate, the focus ring disposed around the periphery of the electrostatic chuck for temperature adjustment by heat exchange, the focus ring comprising an inner region disposed below the substrate and an outer region surrounding the inner region, a heat conductive member disposed above the inner region, the back surface of the substrate contacting the heat conductive member when the substrate is adsorbed by the electrostatic chuck.
Preferably, a heat exchange channel is arranged in the focusing ring, the heat exchange channel comprises a heat exchange medium inlet and a heat exchange medium outlet, and the heat exchange medium enters the heat exchange channel through the heat exchange medium inlet to realize temperature adjustment of the focusing ring.
Preferably, the heat exchange channel is filled with a cooling liquid, and heat of the edge area of the substrate is transferred to the focusing ring through the heat conduction component, and the cooling liquid is used for absorbing heat of the focusing ring.
Preferably, the heat conduction member is in direct contact with the substrate or conducts heat through an intermediate heat conduction member.
Preferably, the heat conductive member is made of an elastic material.
Preferably, the heat conducting component is an integral annular structure or a plurality of mutually independent arc structures.
The invention also provides a plasma processor, which comprises a reaction cavity, wherein an electrostatic chuck for bearing a substrate is arranged in the reaction cavity, the focusing ring is arranged around the electrostatic chuck, and an inserting ring is arranged below the focusing ring.
Preferably, a heat exchange channel is arranged in the focusing ring, the heat exchange channel comprises a heat exchange medium inlet and a heat exchange medium outlet, and the heat exchange medium enters the heat exchange channel through the heat exchange medium inlet to realize temperature adjustment of the focusing ring.
Preferably, a heat exchange channel is arranged inside the insert ring, a heat conduction layer is arranged between the focus ring and the insert ring, and/or a heat exchange channel is arranged between the focus ring and the insert ring, so that the temperature adjustment of the focus ring is realized.
Preferably, a temperature control ring is arranged below the insert ring, a heat exchange channel is arranged in the temperature control ring, and a heat conducting layer is respectively arranged between the focus ring and the insert ring and between the insert ring and the temperature control ring so as to realize temperature adjustment of the focus ring.
Preferably, the heat exchange channel is filled with a cooling liquid, and heat of the edge area of the substrate is transferred to the focusing ring through the heat conduction component, and the cooling liquid is used for absorbing heat of the focusing ring.
The invention further provides a method of controlling the temperature of a substrate within a plasma processor, the method comprising the steps of:
placing a substrate on an electrostatic chuck within a plasma processor;
a focus ring to be temperature-adjustable by heat exchange is disposed around a periphery of an electrostatic chuck for supporting a substrate, the focus ring including an inner region below the substrate and an outer region surrounding the inner region;
the focusing ring is directly or indirectly connected with a heat exchange channel, the heat exchange channel comprises a heat exchange medium inlet and a heat exchange medium outlet, and the heat exchange medium enters the heat exchange channel through the heat exchange medium inlet to realize the temperature regulation of the focusing ring;
a heat conduction member is disposed above the inner region of the focus ring, and a back surface of the substrate is in contact with the heat conduction member when the substrate is attracted by the electrostatic chuck.
Preferably, the heat exchange channel is filled with a cooling liquid, and heat of the edge area of the substrate is transferred to the focusing ring through the heat conduction component, and the cooling liquid is used for absorbing heat of the focusing ring.
Compared with the prior art, the invention has the beneficial effects that: (1) According to the invention, the cooling channel is formed in the focusing ring for cooling liquid to flow through, so as to cool the focusing ring, improve the etching rate of the edge of the substrate, and further improve the uniformity of the etching rate of the substrate; (2) According to the invention, the heat conduction component is arranged between the substrate and the focusing ring, and the heat conduction efficiency between the focusing ring and the substrate is enhanced through the heat conduction effect, so that the cooling effect of the edge of the substrate is better; the heat conduction component is a heat transfer ring with an annular structure, which is beneficial to enhancing the uniformity of heat conduction and improving the uniformity of etching rate of the substrate; (3) The heat conduction component is made of soft materials, and when the substrate is sucked by the electrostatic chuck, the edge of the substrate can be pressed on the heat conduction component made of soft materials, so that the heat conduction efficiency between the focusing ring and the substrate is higher.
Drawings
FIG. 1 is a schematic view of a plasma processor apparatus according to a first embodiment of the present invention;
FIG. 1a is a schematic view of an edge ring assembly according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of a plasma processor apparatus according to a second embodiment of the present invention;
FIG. 2a is a schematic diagram of an edge ring assembly according to a second embodiment of the present invention;
FIG. 3 is a schematic view showing the installation of a heat conductive member according to the first and second embodiments of the present invention;
FIG. 4 is a schematic view of an edge ring assembly and a temperature control ring according to a third embodiment of the present invention;
fig. 4a is a schematic view illustrating a cooling channel structure in a temperature control ring according to a third embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, in this document, the terms "comprises," "comprising," "has," "having," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal device. Without further limitation, an element defined by the statement "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article or terminal device comprising the element.
Fig. 1 schematically illustrates a structure of an inductively coupled plasma processing apparatus, and the plasma processing process of the present invention is performed in a vacuum reaction chamber 110. The substrate 4 is placed on an electrostatic chuck 5 within the reaction chamber 110. A dielectric window 2 is disposed above the reaction chamber 110, a radio frequency coil 3 is disposed above the dielectric window 2, a radio frequency signal is applied to the radio frequency coil 3, and an induced electric field is generated in the reaction chamber 110 by an induced magnetic field which changes rapidly, so as to dissociate the reaction gas into plasma for processing the substrate 4. In other embodiments, the electrostatic chuck 5 may also be used inside a capacitively coupled plasma processing apparatus.
Embodiment one:
as shown in fig. 1, the peripheral edge of the substrate 4 is provided with an edge ring assembly 100, the edge ring assembly 100 comprises a focus ring 6 and an insert ring 7, the focus ring 6 is disposed around the periphery of the electrostatic chuck 5, and the focus ring 6 is disposed above the insert ring 7.
As shown in fig. 1a, the insert ring 7 has an inner portion 71 and an outer portion 72, the inner portion 71 of the insert ring 7 may be located below the outer edge of the substrate 4, and the outer portion 72 of the insert ring 7 may be located outside beyond the coverage of the outer edge of the substrate 4. The dashed line in fig. 1a is the outer edge boundary of the substrate 4 and can also be generally considered as the boundary between the inner portion 71 and the outer portion 72. The focus ring 6 may be made of a conductive material (e.g., si, C or SiC) or the like, or may be made of a non-conductive material or an insulating material (e.g., aluminum oxide). The focus ring 6 covers the outer portion 72 (in this embodiment also the inner portion 71) of the insert ring 7, avoiding exposure of the insert ring 7 to the plasma environment. Although the focus ring 6 is directly exposed to the plasma, since the focus ring 6 is made of the most common material or corrosion-resistant material in an etching apparatus such as Si or C, the focus ring 6 is not contaminated with impurities even if it is worn. In addition, the outer surface of the focus ring 6 may also be coated with a corrosion resistant material (e.g., yttria or yttria, etc.) to reduce wear of the focus ring.
The sum of the capacitance values of the insert ring 7 and the focus ring 6 (i.e., the total capacitance value at the edge of the substrate) is approximately equal to the capacitance value of the electrostatic chuck 5 (i.e., the total capacitance value at the central region of the substrate) for the purpose of improving the plasma sheath. It should be noted that, in practical implementation, a certain deviation is allowed between the two.
As shown in fig. 1, cooling channels 8 are provided in the focus ring 6 and the insert ring 7 of the present embodiment. The cooling passage 8 includes a first branch passage 81 on the inlet side of the vertical arrangement, a second branch passage (not shown in the figure) communicating therebetween, and a third branch passage 82 on the outlet side of the vertical arrangement. The first inlet end 8a of the first branch channel 81 is filled with cooling liquid, and the first outlet end 81a of the first branch channel 81 is positioned inside the focusing ring 6; the second inlet end 81b of the second branch channel communicates with the first outlet end 81a of the first branch channel 81, the second branch channel is surrounded inside the focusing ring 6, and the second outlet end 82a of the second branch channel is located inside the focusing ring 6; the third inlet end 82b of the third branch passage 82 communicates with the second outlet end 82a of the second branch passage, and the third outlet end 8b of the third branch passage 82 outputs the heat-exchanged coolant. Thereby realizing the cooling of the focusing ring 6, improving the etching rate of the edge of the substrate 4 and further improving the uniformity of the etching rate of the substrate. Preferably, the first branch channel 81 and/or the second branch channel and/or the third branch channel 82 are tubular channels.
The first inlet end 8a of the first branch passage 81 is located outside the reaction chamber, the inlet passage portion 81 sequentially extends upward from the outside of the reaction chamber through the reaction chamber sidewall 1 and then through the insert ring 7 until reaching into the interior of the focus ring 6, and the first outlet end 81a of the top of the first branch passage 81 is also located inside the focus ring 6. Likewise, the third outlet end 8b of the third branch channel 82 is located outside the reaction chamber, the third branch channel 82 of the cooling channel 8 starts from the third inlet end 82b inside the focus ring 6, extends downward from the inside of the focus ring 6 in sequence, passes through the insert ring 7 and passes through the side wall 1 of the reaction chamber until reaching the outside of the reaction chamber, and the third inlet end 82b at the top of the third branch channel 82 is located inside the focus ring 6. Preferably, the second branch channel of the intermediate communication is an annular channel with any cross section encircling the inside of the focusing ring 6.
The first inlet end 8a of the first branch passage 81 is also in communication with a first coolant container outside the reaction chamber; the third outlet end 8b of the third branch channel 82 is also connected to a second vessel outside the reaction chamber for collecting the flowing back cooling liquid. The first coolant container outputs the coolant of a set temperature at a certain flow rate, and the coolant flows into the first branch passage 81 from the inlet end and flows therein, passes through the first, second and third branch passages 81, 82 in this order, and finally flows out from the third outlet end 8b of the third branch passage 82 to the second container.
The lower the temperature of the cooling liquid is, the better the cooling effect of the focusing ring 6 and the inserting ring 7 is; the larger the flow rate of the cooling liquid, the more remarkable the cooling effect of the focus ring 6 and the insert ring 7. The larger the diameter of the inlet channel portion 8a and/or the outlet channel portion 8b, the better the cooling effect of the focusing ring 6 and the insert ring 7. Further, the cooling medium introduced into the cooling channel of the present invention may be liquid, gas, or the like, as long as the cooling function is achieved, and the present embodiment is not limited to this, and is not limited to other examples.
In this embodiment, the focusing ring 6 and the insertion ring 7 are connected by using screws 9; a sealing ring 10 (e.g. an O-ring) is provided between the focusing ring 6 and the insertion ring 7, and the sealing ring 10 is sleeved outside the inlet channel portion 81 and/or the outlet channel portion 82 for ensuring a vacuum environment of the vacuum reaction chamber.
As shown in fig. 1 and 3 in combination, the present embodiment provides a heat conduction member 11 between the substrate 4 and the focus ring 6, the focus ring 6 including an inner region below the substrate and an outer region surrounding the inner region, the heat conduction member 11 being located above the inner region, and the back surface of the substrate being in contact with the heat conduction member 11 when the substrate is attracted by the electrostatic chuck 5. The upper end of the heat conduction member 11 is connected to the lower end of the edge of the substrate 4, and the lower end of the heat conduction member 11 is connected to the upper end of the focus ring 6. Therefore, when the cooling channel is filled with the cooling liquid, the heat of the edge region of the substrate is transferred to the focus ring 6 through the heat conduction member 11, and the cooling liquid serves to absorb the heat of the focus ring 6.
Compared with the prior art that heat conduction is carried out only through heat radiation and heat convection of a very small part between the substrate and the focusing ring, the heat conduction efficiency is slightly low, the temperature adjustable range of the edge of the substrate is small, the cooling effect of the edge of the substrate is weak, and the heat conduction part 11 is arranged between the substrate 4 and the focusing ring 6, so that the heat conduction efficiency between the focusing ring 6 and the substrate 4 can be enhanced through the heat conduction effect, and the cooling effect of the edge of the substrate is better.
Illustratively, the heat conducting members 11 are in direct contact with the substrate 4 and the focus ring 6, respectively, or may be indirectly connected through the introduction of an intermediate member, which is not limited in the present invention, so long as the heat conducting action of the substrate 4 and the focus ring 6 can be achieved, for enhancing the heat conducting efficiency between the focus ring 6 and the substrate 4.
Optionally, the heat conducting component 11 is a heat transfer ring, and the heat conducting component 11 with a ring structure is beneficial to enhancing the uniformity of heat conduction and improving the uniformity of etching rate of the substrate. Further, the present embodiment can further adjust the heat conduction efficiency between the focus ring 6 and the substrate 4 by changing the cross-sectional area of the heat transfer ring. The heat conduction member 11 may be a continuous annular structure; the temperature sensor can also be a plurality of mutually independent components, the components can be made of the same material, and different materials can be selected to realize independent control of the temperature of the edge areas at different positions.
Illustratively, the heat conducting member 11 is made of a soft material (e.g., an elastic material), such as a Teflon seal ring or a perfluoro seal ring, or the like. When the substrate 4 is sucked by the electrostatic chuck 5, the edge of the substrate 4 is pressed against the heat conducting member 11 of soft material, so that the heat conduction efficiency between the focus ring 6 and the substrate 4 is higher.
Embodiment two:
as shown in fig. 2, the peripheral edge of the substrate 4 is provided with an edge ring assembly 100, the edge ring assembly 100 includes a focus ring 6 and an insert ring 7, the focus ring 6 is disposed around the periphery of the electrostatic chuck 5, and the focus ring 6 is disposed over the insert ring 7. As shown in fig. 2a, the insert ring 7 has an inner portion and an outer portion, the inner portion of the insert ring 7 being located below the outer edge of the substrate 4, the outer portion of the insert ring 7 being outside beyond the coverage of the outer edge of the substrate 4. The dashed line in fig. 1a is the outer edge boundary of the substrate 4 and can also be generally considered as the boundary between the inner part and the outer part. The focus ring 6 may be made of a conductive material (e.g., si, C or SiC) or the like, or may be made of a non-conductive material or an insulating material (e.g., aluminum oxide).
The focusing ring 6 covers the outer part of the insert ring 7 (in this embodiment, the inner part is also covered), while the outer part of the focusing ring 6 is outside beyond the coverage of the outer edge of the insert ring 7. Wherein the focusing ring 6 and the insertion ring 7 are connected using screws 9.
In this embodiment, the focusing ring 6 is connected to a cooling channel 8, and the cooling channel 8 extends into the focusing ring 6, and the cooling channel 8 is used for cooling the focusing ring 6. The cooling passage 8 includes a first branch passage 81 on the inlet side of the vertical arrangement, a second branch passage (not shown in the figure) communicating therebetween, and a third branch passage 82 on the outlet side of the vertical arrangement. The first inlet end 8a of the first branch channel 81 is filled with cooling liquid, and the first outlet end 81a of the first branch channel 81 is positioned inside the focusing ring 6; the second inlet end 81b of the second branch channel communicates with the first outlet end 81a of the first branch channel 81, the second branch channel is surrounded inside the focusing ring 6, and the second outlet end 82a of the second branch channel is located inside the focusing ring 6; the third inlet end 82b of the third branch passage 82 communicates with the second outlet end 82a of the second branch passage, and the third outlet end 8b of the third branch passage 82 outputs the heat-exchanged coolant. Thereby realizing the cooling of the focusing ring 6, improving the etching rate of the edge of the substrate 4 and further improving the uniformity of the etching rate of the substrate. Preferably, the first branch channel 81 and/or the second branch channel and/or the third branch channel 82 are tubular channels.
The first inlet end 8a of the first branch passage 81 is located outside the reaction chamber; unlike the first embodiment, the first branch channel 81 in the second embodiment does not pass through the insert ring 7 and then extends into the focus ring 6, but the first branch channel 81 extends upward from the outside of the reaction chamber and passes through the side wall 1 of the reaction chamber and then directly extends into the focus ring 6, and the first outlet end 81a at the top of the first branch channel 81 is located in the focus ring 6. Likewise, the third outlet end 8b of the third branch channel 82 is located outside the reaction chamber; unlike the first embodiment, the third outlet end 8b of the cooling channel 8 in the second embodiment extends downward from the inside of the focus ring 6 and passes directly through the side wall 1 of the reaction chamber to the outside of the reaction chamber, and the third inlet end 82b at the top of the third outlet end is located inside the focus ring 6. Preferably, the second branch channel of the intermediate communication is an annular channel with any cross section encircling the inside of the focusing ring 6.
In this embodiment, the first inlet end 8a of the first branch passage 81 is also in communication with a first coolant container outside the reaction chamber; the third outlet end 8b of the third branch channel 82 is also connected to a second vessel outside the reaction chamber for collecting the flowing back cooling liquid. The first coolant container outputs the coolant of a set temperature at a certain flow rate, and the coolant flows into the first branch passage 81 from the inlet end and flows therein, passes through the first, second and third branch passages 81, 82 in this order, and finally flows out from the third outlet end 8b of the third branch passage 82 to the second container.
In this embodiment, the connection between the focusing ring 6 and the first branch channel 81 or the third branch channel 82 is sealed by a sealing ring 10-1, and/or the connection between the first branch channel 81 or the third branch channel 82 and the wall of the reaction chamber is sealed by a sealing ring 10-2, so as to ensure the vacuum environment of the vacuum reaction chamber.
The lower the temperature of the cooling liquid is, the better the cooling effect of the focusing ring 6 and the inserting ring 7 is; the larger the flow rate of the cooling liquid, the more remarkable the cooling effect of the focus ring 6 and the insert ring 7. The larger the diameter of the first branch channel 81 and/or the third branch channel 82, the better the cooling effect of the focusing ring 6 and the insert ring 7.
As shown in fig. 2 and 3 in combination, the present embodiment provides a heat conduction member 11 between the substrate 4 and the focus ring 6, the focus ring 6 including an inner region below the substrate and an outer region surrounding the inner region, the heat conduction member 11 being located above the inner region, and the back surface of the substrate being in contact with the heat conduction member 11 when the substrate is attracted by the electrostatic chuck 5. The upper end of the heat conduction member 11 is connected to the lower end of the edge of the substrate 4, and the lower end of the heat conduction member 11 is connected to the upper end of the focus ring 6. Therefore, when the cooling channel is filled with the cooling liquid, the heat of the edge region of the substrate is transferred to the focus ring 6 through the heat conduction member 11, and the cooling liquid serves to absorb the heat of the focus ring 6.
Compared with the prior art that heat conduction is carried out only through heat radiation and heat convection of a very small part between the substrate and the focusing ring, the heat conduction efficiency is slightly low, the temperature adjustable range of the edge of the substrate is small, the cooling effect of the edge of the substrate is weak, and the heat conduction part 11 is arranged between the substrate 4 and the focusing ring 6, so that the heat conduction efficiency between the focusing ring 6 and the substrate 4 can be enhanced through the heat conduction effect, and the cooling effect of the edge of the substrate is better.
Illustratively, the heat conducting members 11 are in direct contact with the substrate 4 and the focus ring 6, respectively, or may be indirectly connected through the introduction of an intermediate member, which is not limited in the present invention, so long as the heat conducting action of the substrate 4 and the focus ring 6 can be achieved, for enhancing the heat conducting efficiency between the focus ring 6 and the substrate 4.
Optionally, the heat conducting component 11 is a heat transfer ring, and the heat conducting component 11 with a ring structure is beneficial to enhancing the uniformity of heat conduction and improving the uniformity of etching rate of the substrate. Further, the present embodiment can further adjust the heat conduction efficiency between the focus ring 6 and the substrate 4 by changing the cross-sectional area of the heat transfer ring. The heat conduction member 11 may be a continuous annular structure; the temperature sensor can also be a plurality of mutually independent components, the components can be made of the same material, and different materials can be selected to realize independent control of the temperature of the edge areas at different positions.
Illustratively, the heat conducting member 11 is made of a soft material (e.g., an elastic material), such as a Teflon seal ring or a perfluoro seal ring, or the like. When the substrate 4 is sucked by the electrostatic chuck 5, the edge of the substrate 4 is pressed against the heat conducting member 11 of soft material, so that the heat conduction efficiency between the focus ring 6 and the substrate 4 is higher.
Embodiment III:
in the first embodiment to the second embodiment, the cooling channel 8 is disposed inside the focusing ring 6 to directly control the temperature of the focusing ring 6, so long as the circulation path of the cooling channel 8 is ensured to pass through at least the inside of the focusing ring 6 to ensure the cooling effect of the focusing ring 6, and the invention is not limited as to whether the cooling channel 8 passes through the insert ring 7 or other parts and the specific path of the whole cooling channel. It should be noted that the present invention is not limited to the cooling channels described in the above embodiments being disposed inside the focusing ring 6, but may be disposed between the focusing ring 6 and the insert ring 7, or inside the insert ring 7, or at other corresponding positions, such as inside the temperature control ring 12.
As shown in fig. 4 and 4a, a temperature control ring 12 surrounds the base 101 below the electrostatic chuck 5 and is positioned below the insert ring 7. Illustratively, when the cooling channel 13 is disposed within the temperature-controlled ring 12, the cooling channel 13 includes an inlet 13a and an outlet 13b for the input and output of a cooling fluid, and an annular channel portion 13c located inside the temperature-controlled ring 12. Meanwhile, in this embodiment, heat conducting layers are respectively arranged between the focusing ring 6 and the inserting ring 7 and between the inserting ring 7 and the temperature control ring 12, so that high-efficiency heat conducting effects between the focusing ring 6 and the inserting ring 7 and between the inserting ring 7 and the temperature control ring 12 in a vacuum environment are ensured, and temperature adjustment of the focusing ring 6 is indirectly realized.
In another example, when the cooling channel is disposed inside the insert ring, the cooling channel includes an inlet and an outlet for inputting and outputting a cooling liquid, and an annular channel portion located inside the insert ring, and at the same time, a heat conducting layer is disposed between the focus ring and the insert ring, so as to ensure efficient heat conduction between the focus ring and the insert ring in a vacuum environment, thereby indirectly realizing temperature adjustment of the focus ring.
Illustratively, when a cooling channel is disposed between the focus ring and the insert ring, the cooling channel likewise includes an inlet and an outlet for the input and output of a cooling fluid, and an annular channel portion between the focus ring and the insert ring, optionally disposed within a recess formed in a lower end of the focus ring and a recess formed in an upper end of the insert ring for effecting temperature regulation of the focus ring.
For the above examples, the shape, path, outlet and inlet of the cooling channel are located on the same side or different sides, and the nature of the cooling medium introduced by the cooling channel, etc. the present invention is not limited, and may be designed according to practical application situations.
In summary, the cooling channels are formed in the focusing ring or between the focusing ring and the insert ring or in the insert ring or at other corresponding positions, so that the cooling liquid or other cooling media flows in the cooling channels to cool the focusing ring, and the etching rate of the edge of the substrate and the uniformity of the etching rate of the substrate are improved; the heat conduction component is arranged between the substrate and the focusing ring, so that the heat conduction efficiency between the focusing ring and the substrate is enhanced through heat conduction, and the cooling effect of the edge of the substrate is better; the heat conduction component is of a ring structure, which is beneficial to enhancing the uniformity of heat conduction and improving the uniformity of etching rate of the substrate; the heat conduction component is made of soft materials, and when the substrate is sucked by the electrostatic chuck, the edge of the substrate can be pressed on the heat conduction component made of the soft materials, so that the heat conduction efficiency between the focusing ring and the substrate is higher.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (13)
1. A focus ring for a plasma processor, the plasma processor comprising a reaction chamber, an electrostatic chuck disposed in the reaction chamber for supporting a substrate, the focus ring disposed around the periphery of the electrostatic chuck, characterized in that the focus ring, which is temperature-adjustable by heat exchange, comprises an inner region below the substrate and an outer region surrounding the inner region, a heat conductive member disposed above the inner region, wherein when the substrate is adsorbed by the electrostatic chuck, the back surface of the substrate contacts with the heat conductive member, and the heat conductive member is used for enhancing heat conduction efficiency between the focus ring and the substrate, so as to improve a temperature reduction effect of the edge of the substrate.
2. The focus ring for a plasma processor of claim 1, wherein a heat exchange channel is disposed within the focus ring, the heat exchange channel comprising a heat exchange medium inlet and a heat exchange medium outlet, a heat exchange medium entering the heat exchange channel through the heat exchange medium inlet to effect temperature regulation of the focus ring.
3. The focus ring for a plasma processor of claim 2, wherein the heat exchanging channel is filled with a cooling fluid, heat of an edge region of the substrate is transferred to the focus ring through a heat conducting member, and the cooling fluid is used to absorb heat of the focus ring.
4. The focus ring for a plasma processor of claim 1, wherein said heat conducting member is in direct contact with said substrate or is thermally conductive through an intermediate thermally conductive member.
5. The focus ring for a plasma processor of claim 1 wherein said thermally conductive member is made of an elastomeric material.
6. The focus ring for a plasma processor of claim 1, wherein said thermally conductive member is a unitary annular structure or is a plurality of mutually independent arcuate structures.
7. A plasma processor comprising a reaction chamber having an electrostatic chuck disposed therein for carrying a substrate, wherein a focus ring as recited in any one of claims 1-6 is disposed around the electrostatic chuck, and an insert ring is disposed under the focus ring.
8. The plasma processor of claim 7 wherein a heat exchange channel is disposed within the focus ring, the heat exchange channel including a heat exchange medium inlet and a heat exchange medium outlet, a heat exchange medium entering the heat exchange channel through the heat exchange medium inlet to effect temperature regulation of the focus ring.
9. The plasma processor of claim 7 wherein a heat exchange channel is provided within the insert ring and a thermally conductive layer is provided between the focus ring and the insert ring and/or a heat exchange channel is provided between the focus ring and the insert ring to effect temperature regulation of the focus ring.
10. The plasma processor of claim 7 wherein a temperature control ring is disposed below the insert ring, heat exchange channels are disposed within the temperature control ring, and thermally conductive layers are disposed between the focus ring and the insert ring, and between the insert ring and the temperature control ring, respectively, to effect temperature regulation of the focus ring.
11. The plasma processor of any of claims 7 to 10 wherein the heat exchanging channel is filled with a cooling fluid, the heat at the edge region of the substrate being transferred to the focus ring by a heat conducting member, the cooling fluid being adapted to absorb the heat from the focus ring.
12. A method of controlling the temperature of a substrate in a plasma processor, the method comprising:
the substrate is placed on an electrostatic chuck within a plasma processor,
a focus ring to be temperature-adjustable by heat exchange is disposed around a periphery of an electrostatic chuck for supporting a substrate, the focus ring including an inner region below the substrate and an outer region surrounding the inner region;
the focusing ring is directly or indirectly connected with a heat exchange channel, the heat exchange channel comprises a heat exchange medium inlet and a heat exchange medium outlet, and the heat exchange medium enters the heat exchange channel through the heat exchange medium inlet to realize the temperature regulation of the focusing ring;
and a heat conduction component is arranged above the inner side area of the focusing ring, when the substrate is adsorbed by the electrostatic chuck, the back surface of the substrate is contacted with the heat conduction component, and the heat conduction efficiency between the focusing ring and the substrate is enhanced by adjusting the structure and/or the material of the heat conduction component so as to improve the cooling effect of the edge of the substrate.
13. The method of claim 12, wherein the heat exchanging channel is filled with a cooling liquid, and heat of an edge region of the substrate is transferred to the focus ring through a heat conduction member, and the cooling liquid is used to absorb heat of the focus ring.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911089041.1A CN112786422B (en) | 2019-11-08 | 2019-11-08 | Focusing ring, plasma processor and method |
| TW109135592A TWI821605B (en) | 2019-11-08 | 2020-10-14 | Focusing ring, plasma processor and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911089041.1A CN112786422B (en) | 2019-11-08 | 2019-11-08 | Focusing ring, plasma processor and method |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI821605B (en) | 2023-11-11 |
| CN112786422A (en) | 2021-05-11 |
| TW202119463A (en) | 2021-05-16 |
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