CN108878247A - Support unit and substrate processing apparatus including the support unit - Google Patents
Support unit and substrate processing apparatus including the support unit Download PDFInfo
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- CN108878247A CN108878247A CN201810455182.XA CN201810455182A CN108878247A CN 108878247 A CN108878247 A CN 108878247A CN 201810455182 A CN201810455182 A CN 201810455182A CN 108878247 A CN108878247 A CN 108878247A
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- focusing ring
- temperature
- heat transfer
- substrate
- transfer sheet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
Abstract
The present invention relates to support unit and including the substrate processing apparatus of the support unit.The substrate processing apparatus includes：Chamber has the processing space for handling substrate；Support unit, in processing space inner support substrate；Process gas is supplied in processing space by gas supply unit；And plasma source, plasma is generated based on the process gas in processing space.Support unit includes：Support plate, substrate are placed in the support plate；Focusing ring is arranged to around the substrate supported by support plate；And temperature control unit, adjust the temperature of focusing ring.Temperature control unit may include：Primary heater is arranged to heat focusing ring below focusing ring and be arranged to opposite with focusing ring；And cooling component, it is arranged below primary heater.
Description
Technical field
The embodiment of inventive concepts described herein is related to support unit and the processing substrate including the support unit is set
It is standby.
Background technique
For manufacturing semiconductor devices, is deposited and cleaned by such as photoetching, etching, ashing, ion implanting and film
The various techniques such as technique form desired pattern on substrate.Wherein, the heating zone selected from the layer removal being formed on substrate
Etch process include wet etching process and dry method etch technology.
Wherein, dry method etch technology is used for using the Etaching device of plasma.In general, the shape in the inner space of chamber
At electromagnetic field to form plasma.The process gas provided in the chamber excitation is become plasmoid by electromagnetic field.
Plasma refers to the state of gas ionization, while including ion, electronics and free radical.Plasma is due to significant
High temperature, strong electrical field or radio frequency electromagnetic field and generate.The manufacturing process of semiconductor includes the etch process using plasma.Etching
Technique is carried out with colliding comprising ionizing particle in the plasma with substrate.
Fig. 1 is the sectional view for showing substrate processing apparatus 1.With reference to Fig. 1, typically, support unit 2 by using it is equal from
Daughter executes the 1 inside supporting substrate of substrate processing apparatus of etching process to substrate " W ", which includes：Support plate 3,
Substrate is placed on it；With focusing ring 4, along support plate 3 circumferentially and supporting substrate " W " fringe region.In general, adjusting
It saves on the heater 5 and the setting to support unit 2 of cooling component 6 of the temperature of support plate 3, but adjust the temperature of focusing ring 4
Element is not provided on support unit 2.In general, only by contacting with support plate 3 to adjust the temperature of focusing ring 4, but only lead to
It crosses and contacts the temperature for being likely difficult to suitably adjust focusing ring 4 with the simple of support plate 3.
Summary of the invention
The embodiment of present inventive concept provides the equipment that can accurately adjust the temperature of focusing ring.
The embodiment of present inventive concept provides the equipment for capableing of uniform treatment substrate.
The embodiment of present inventive concept provides the equipment that can be improved the reproducibility of the technique for substrate.
Inventive concept provides a kind of for handling the substrate processing apparatus of substrate.That conceives according to the present invention is exemplary
Embodiment, substrate processing apparatus include：Chamber has the processing space for handling substrate；Support unit is being handled
Space inner support substrate；Process gas is supplied in processing space by gas supply unit；And plasma source, it is based on
Process gas in processing space generates plasma.Support unit includes：Support plate, substrate are placed in the support plate；It is poly-
Jiao Huan is arranged to around the substrate supported by support plate；And temperature control unit, adjust the temperature of focusing ring.Temperature
Control unit includes：Primary heater is arranged to heat focusing ring below focusing ring and be arranged to opposite with focusing ring；The
Two heaters are mounted at position opposite with primary heater below primary heater；And cooling component, setting is the
Below two heaters.
Support unit can also include main body, and with circular orientation below focusing ring, and cooling component can be set
In body interior.
Primary heater and secondary heater can be set in main body.
Support unit can also include heat transfer sheet, between focusing ring and main body and have faster than the heat transfer of main body
The higher rate of heat transfer of rate.
Support unit can also include heat transfer sheet protector, surround the inner surface and the outer surface of heat transfer sheet.
Heat transfer sheet protector can be integrally provided with main body.
According to illustrative embodiments, focusing ring can have bottom surface, in staged in the inner area of bottom surface
Difference in height is formed between domain and perimeter, wherein the top surface of main body can be connect in staged with the bottom surface with focusing ring
It closes.
Heat transfer sheet protector may include：Internal Protection part surrounds the inner surface and the outer surface of internal sheets；It is anti-with outside
Guard surrounds the inner surface and the outer surface of outer plate.
Temperature control unit may include：Temperature measures component, measures the temperature of focusing ring；And controller, basis
Primary heater, secondary heater and cooling component are controlled by the temperature of temperature measurement component measurement.
When the temperature of the focusing ring by temperature measurement component measurement is less than specific range of temperatures, controller can increase the
The temperature of one heater, increases the temperature of cooling component, and increases the temperature of secondary heater.It is surveyed when by temperature measurement component
When the temperature of the focusing ring of amount is higher than specific range of temperatures, controller can reduce the temperature of primary heater, reduce cooling component
Temperature and reduce the temperature of secondary heater.
Focusing ring may include silicon (Si), silicon carbide (SiC), quartz, yttrium oxide (Y2O3At least one of), and it is main
Body can be quartz, yttrium oxide (Y2O3) and aluminium oxide (Al2O3At least one of).
In addition, inventive concept provides a kind of supports for the supporting substrate in the processing space for handling substrate
Unit.The illustrative embodiments conceived according to the present invention, support unit include：Support plate, substrate are placed in the support plate；
Focusing ring is arranged to around the substrate supported by support plate；And temperature control unit, adjust the temperature of focusing ring.Temperature
Spending control unit includes：Primary heater is arranged to heat focusing ring below focusing ring and be arranged to opposite with focusing ring；
Secondary heater, is mounted at position opposite with primary heater below primary heater and cooling component, setting exist
Below secondary heater.
Support unit can also include main body, and with circular orientation below focusing ring, and cooling component can be set
In body interior.
Primary heater and secondary heater can be set in main body.
Support unit can also include heat transfer sheet, between focusing ring and main body and with the rate of heat transfer than main body
High rate of heat transfer.
Support unit can also include heat transfer sheet protector, surround the inner surface and the outer surface of heat transfer sheet.
Support unit can also include support plate heating component, heated support plate.
The support plate may include：Electrostatic chuck has the top surface for placing substrate thereon；And lower main body,
It is arranged in below electrostatic chuck and there is the cooling line flowed wherein for cooling fluid.
Cooling component may include cooling channels, is wherein flowing and is being formed in main body for cooling fluid.
Temperature control unit may include：Temperature measures component, measures the temperature of focusing ring；And controller, basis
Primary heater, secondary heater and cooling component are controlled by the temperature of temperature measurement component measurement.
Detailed description of the invention
By reference to the attached drawing illustrative embodiments that present inventive concept is described in detail, present inventive concept it is above and other
Object and feature will become obvious.
Fig. 1 is the sectional view for showing typical substrate processing equipment；
Fig. 2 is the sectional view for showing the substrate processing apparatus for the embodiment conceived according to the present invention；
Fig. 3 is the sectional view for showing a part of support unit of Fig. 2；With
Fig. 4 is the sectional view for showing a part of support unit for another embodiment conceived according to the present invention.
Specific embodiment
Hereinafter, the embodiment of present inventive concept will be described in greater detail with reference to the attached drawings.The implementation of present inventive concept
Mode can modify in a variety of manners, and the range of present inventive concept is not necessarily to be construed as being sent out by described below
The limitation of the embodiment of bright design.The embodiment of present inventive concept is provided for more completely retouching to those skilled in the art
State present inventive concept.Therefore, the shape etc. of the component in attached drawing is exaggerated to emphasize clearer explanation.
Hereinafter, the embodiment conceived according to the present invention is described to the base for being carried out etching substrate by using plasma
Plate processing equipment.However, present inventive concept is without being limited thereto, but it can be applied to that there is the fringe region for being used to support substrate simultaneously
Around the various devices of the focusing ring of support plate (placing substrate thereon).
In addition, the embodiment conceived according to the present invention, electrostatic chuck will be described as the example of support unit.However,
Present inventive concept is unrestricted, and support unit can be by machinery engaging or vacuum come supporting substrate.
Fig. 2 is the sectional view for showing the substrate processing apparatus for the embodiment conceived according to the present invention.Fig. 3 is to show Fig. 2
Support unit 200 a part sectional view.Referring to figs. 2 and 3, substrate processing apparatus 10 is by using corona treatment
Substrate " W ".For example, substrate processing apparatus 10 can execute etching process to substrate " W ".Substrate processing apparatus 10 includes chamber
100, support unit 200, gas supply unit 300, plasma source 400 and exhaust unit 500.
Chamber 100 has the processing space for handling substrate " W ".Chamber 100 includes shell 110, lid 120 and lining
130。
Shell 110 has inner space, which has open top surface.The inner space of shell 110 is mentioned
It is provided as the processing space for executing substrate processing process.Shell 110 includes metal.Shell 110 may include aluminium (Al).Shell
Body 110 can be grounded.Shell 110 is formed with gas vent 102 in its bottom surface.Gas vent 102 is connect with exhaust line 151.
The byproduct of reaction generated by technique and the gas being trapped in the inner space of shell 110 can be by 151 rows of exhaust line
Outside is arrived out.By gas exhaust treatment, the internal pressure of shell 110 is reduced to specified pressure.
The open top surface of the covering shell 110 of lid 120.It is empty with the inside of seal casinghousing 110 that lid 120 is set as plate
Between.Lid 120 may include dielectric medium window.
Lining 130 is arranged inside shell 110.Lining 130 has inner space, which has open top table
Face and bottom surface.Lining 130 can be configured to cylindrical shape.Lining 130 can have the inner surface corresponding to shell 110
Radius.Lining 130 is arranged along the inner surface of shell 110.Support ring 131 is formed on the upper end of lining 130.Support ring
131 are arranged in annular slab and protrude outward along the circumferential of lining 130 from lining 130.Support ring 131 is placed in shell 110
Upper end is to support lining 130.Lining 130 may include material identical with the material of shell 110.Lining 130 may include Al.
The inner surface of the protection shell 110 of lining 130.When process gas is changed into plasma, electricity can be discharged in chamber 100
Arc.Arc discharge can damage peripheral unit.Lining 130 protects the inner surface of shell 110 to prevent the inner surface of shell 110
It is damaged due to arc discharge.Furthermore, it is therefore prevented that the byproduct of reaction generated in substrate processing process is deposited on shell 110
On inner wall.Compared with shell 110, lining 130 needs lower cost and is easier to be replaced with new lining.Therefore, work as lining
For layer 130 due to arc discharge and when being damaged, staff can replace lining 130 with new lining.
Processing space inner support substrate " W " of the support unit 200 inside chamber 100.For example, support unit 200 is arranged
Inside the shell 110 of chamber 100.200 supporting substrate of support unit " W ".Support unit 200 may include by using electrostatic
The electrostatic chuck of power sorbing substrate " W ".Alternatively, support unit 200 can by such as mechanical grip it is various in a manner of support
Substrate " W ".Hereinafter, the support unit 200 by description including electrostatic chuck.
According to an embodiment, support unit 200 includes support plate 201, focusing ring 240, temperature control unit 600 and master
Body 260.Support unit 200 can be spaced apart in 110 inside of shell with the bottom surface of shell 110.
Support plate 201 includes electrostatic chuck 220, electrode 223, lower main body 230, insulation board 250 and lower cover 270.Substrate " W "
It is placed in support plate 201.
Electrostatic chuck 220 is located on the upper end of support plate 201.Electrostatic chuck 220 may include the dielectric with plate-like
Matter.Substrate " W " is placed on the top surface of electrostatic chuck 220.The diameter of the top surface of electrostatic chuck 220 is less than substrate " W "
Diameter.Formed therein which first fluid supply passage 221 of electrostatic chuck 220 is passed as supplying to the bottom surface of substrate W
The channel of hot gas.Electrode 223 is embedded in electrostatic chuck 220.
Electrode 223 is electrically connected with the first lower electric power 223a.By being applied to the electric current of electrode 223, electrostatic force is in electrode
It is acted between 223 and substrate " W ", and substrate " W " is adsorbed to electrostatic chuck 220 by electrostatic force.
Support unit 200 can also include support plate heating component 225.225 heated support plate of support plate heating component
201.Support plate heating component 225 is located at 223 lower section of electrode.Support plate heating component 225 and the second lower electric power 225a are electrical
Connection.Support plate heating member 225 is resisted from the second lower electric power 225a and is applied to electric current thereon, to generate heat.It is produced
Raw heat is transmitted to substrate " W " by electrostatic chuck 220.Substrate " W " is protected by the heat that support plate heating component 225 generates
It holds in specific temperature.Support plate heating component 225 includes spiral-shaped coil.Lower main body 230 is located at 220 lower section of electrostatic chuck.
The bottom surface of electrostatic chuck 220 can be integrated to the top surface of lower main body 230 by adhesive 236.
The formed therein which first circulation fluid channel 231 of lower main body 230, second circulation fluid channel 232 and second supply
Answer fluid channel 233.First circulation fluid channel 231 is used as the channel cycled through for heat-conducting gas.Second circulation fluid is logical
Road 232 is used as the channel passed through for cooling fluid circulation.Second fluid supply passage 233 makes first circulation fluid channel 231
It is connected to the first fluid supply passage 221.First circulation fluid channel 231 is used as the channel cycled through for heat-conducting gas.The
One circulation of fluid channel 231 can be formed as spiral-shaped inside lower main body 230.Alternatively, first circulation fluid channel
231 may include with the annular fluid passage of mutually different radius arranged concentric.First circulation fluid channel 231 can be each other
Connection.First circulation fluid channel 231 is formed in identical height.
First circulation fluid channel 231 is connected by heat transfer medium supply line 231b and heat transfer medium storage element 231a
It connects.Heat transfer medium is stored in heat transfer medium storage element 231a.Heat transfer medium includes inert gas.According to an embodiment party
Formula, heat transfer medium include helium (He) gas.Helium (He) gas is supplied to first circulation fluid by heat transfer medium supply line 231b
Channel 231, and pass sequentially through the second fluid supply passage 233 and the first fluid supply passage 221 and be supplied to substrate " W "
Bottom surface.Helium (He) gas is used as the biography hot medium facilitated between substrate " W " and electrostatic chuck 220.
Second circulation fluid channel 232 may be used as cooling line, have in the cooling fluid wherein flowed.According to one
A embodiment, second circulation fluid channel 232 pass through cooling fluid supply line 232c and cooling fluid storage element 232a
Connection.Cooling fluid is stored in cooling fluid storage element 232a.Cooler 232b, which can be set, stores list in cooling fluid
The inside of first 232a.Cooling fluid is cooled to specific temperature by cooler 232b.Alternatively, cooler 232b may be mounted at
On cooling fluid supply line 232c.It is received in second circulation fluid channel 232 by cooling fluid supply line 232c
Cooling fluid is recycled along second circulation fluid channel 232 with cooling lower main body 230.Cooling lower main body 230 is simultaneously by electrostatic chuck
Disk 220 and substrate " W " cool down together, so that substrate " W " is maintained at specific temperature.
Focusing ring 240 is arranged at the fringe region of support plate 201 around the substrate " W " supported by support plate 201.
According to one embodiment, focusing ring 240 is with annular shape, and is arranged along the circumferential of electrostatic chuck 220 with branch support group
The fringe region of plate " W ".Focusing ring 240 can be set to have with annular fringe region outstanding, so that plasma is concentrated
On substrate " W ".Focusing ring 240 may include dielectric material, and dielectric material includes silicon (Si), silicon carbide (SiC), quartz, oxygen
Change yttrium (Y2O3) and aluminium oxide (Al2O3At least one of).For example, focusing ring 240 may include silicon (Si), silicon carbide
(SiC), quartz, yttrium oxide (Y2O3) and aluminium oxide (Al2O3Any of).
Insulation board 250 is located at lower 230 lower section of main body.Insulation board 250 is exhausted including making lower main body 230 insulate with lower cover 270
Edge material.
Lower cover 270 is located at the lower end of support unit 200.Lower cover 270 can be spaced apart with the bottom surface of shell 110.Under
Lid 270 has inner space, which has open top surface.The top surface of lower cover 270 is covered by insulation board 250.
Therefore, the outer diameter in the section of lower cover 270 can be equal to the outer diameter of insulation board 250.Under lifter pin module (not shown) can be located at
In the inner space of lid 270, so that the substrate carried " W " is moved to electrostatic chuck 220 from the external component that carries is arranged in.
Lower cover 270 has connecting elements 273.Connecting elements 273 is by the inner wall of the outer surface of lower cover 270 and shell 110
Connection.Multiple connecting elements 273 can be arranged on the outer surface of lower cover 270 with rule distance.Connecting elements 273 supports chamber
Support unit 200 in room 100.In addition, connecting elements 273 is connect with the inner wall of shell 110, so that 270 electrical ground of lower cover.With
First power supply line 223c of the first lower electric power 223a connection, the second source line 225c being connect with the second lower electric power 225a,
Connect with the heat transfer medium storage element 231a heat transfer medium supply line 231b connecting and with cooling fluid storage element 232a
The cooling fluid supply line 232c connect is extended in lower cover 270 by the inner space of connecting elements 273.
Process gas is supplied in the processing space in chamber 100 by gas supply unit 300.Gas supply unit 300
Including gas supply nozzle 310, gas feedthroughs 320 and gas storage element 330.Gas supply nozzle 310 is mounted on lid
120 central part.Gas supply nozzle 310 is formed with jet port in its bottom surface.Jet port is located at the lower section of lid 120 to incite somebody to action
Process gas is supplied in chamber 100.Gas feedthroughs 320 connect gas supply nozzle 310 and gas storage element 330
It connects.Gas feedthroughs 320 are used to the process gas being stored in gas storage element 330 being supplied to gas supply nozzle
310.Valve 321 is installed in gas feedthroughs 320.Valve 321 opens or closes gas feedthroughs 320 and passes through gas to adjust
The flow velocity for the process gas that supply line 320 is supplied.
Plasma source 400 generates plasma from the process gas being supplied in processing space.Plasma source 400 can
To include the source inductively coupled plasma body (ICP).Plasma source 400 includes antenna chamber 410, antenna 420 and plasma electricity
Source 430.Antenna chamber 410 is arranged to the cylindrical shape with open lower part.Antenna chamber 410 has inner space.Antenna chamber 410
With diameter corresponding with the diameter of chamber 100.The lower end of antenna chamber 410 is removably disposed on lid 120.Antenna 420
It is arranged inside antenna chamber 410.Antenna 420 is arranged in the form of the spiral winding for being wound in multiturn and and plasma electrical source
430 connections.Antenna 420 receives power from plasma electrical source 430.Plasma electrical source 430 can be located at the outer of chamber 100
Portion.The antenna 420 for receiving power can form electromagnetic field in the processing space of chamber 100.Process gas can pass through electromagnetism
Field is transformed into plasmoid.
Exhaust unit 500 is between the inner wall and support unit 200 of shell 110.Exhaust unit 500 includes wherein being formed
There is the exhaustion plate 510 of through-hole 511.Exhaustion plate 510 is arranged to annulus shape.Exhaustion plate 510 has formed therein multiple logical
Hole 511.The process gas inside shell 110 is provided to be discharged after the through-hole 511 by exhaustion plate 510 by gas vent 102.
The flowing of process gas can be controlled according to the shape of exhaustion plate 510 and the shape of through-hole 511.
The temperature of the adjusting focusing ring 240 of temperature control unit 600.According to one embodiment, temperature control unit 600 wraps
Include primary heater 610, secondary heater 620, cooling component 630, temperature measurement component 640 and controller 650.
Primary heater 610 heats focusing ring 240.Primary heater 610 below focusing ring 240 with 240 phase of focusing ring
To setting.
Secondary heater 620 is mounted on 610 lower section of the primary heater position opposite with primary heater 610.Second adds
Hot device 620 is minimized between primary heater 610 and cooling component 630 by the cold air application of cooling component 630
Influence to the heating effect of primary heater 610.
Primary heater 610 and secondary heater 620 can be set to the form of spiral winding, to lead to when applying power
Resistance electric current is crossed to generate heat.Alternatively, primary heater 610 and secondary heater 620 can be set to various types of
The form of heater is to generate heat.For example, primary heater 610 and secondary heater 620 can be set to for heating fluid stream
The form for the heating fluid channel crossed.Primary heater 610 and secondary heater 620 can be set to same type or mutually not
Same type.
Cooling component 630 is mounted on 620 lower section of the secondary heater position opposite with secondary heater 620.According to one
Embodiment, cooling component 630 include cooling channels 631, fluid supply unit 632 and cooler 633.Cooling fluid is logical
Road 631 includes the fluid channel that wherein flowing has cooling fluid.Cooling fluid is supplied to cooling channels by cooler 633
631 so that cooling fluid recycles inside cooling channels 631.Cooler 633 is cooling by cooling fluid.Cooler 633
It can be set on the pipeline of connection cooling channels 631 and fluid supply unit 632.Alternatively, cooler 633 can be with
The inside of fluid supply unit 632 is set.Alternatively, various types can be set into cooling component 630.For example, cooling
Component 630 may include Peltier device.Cooling component 630 cools down focusing ring 240.For example, the cooling fluid of cooling component 630
Channel 631 or Peltier device are arranged in the main body 260 that will be described below, to cool down main body 260.Main body 260 is cooled
To cool down the fringe region of focusing ring 240 and substrate " W ", to facilitate the temperature at the fringe region of control base board " W ".
The temperature of temperature measurement 640 real-time measurement focusing ring 240 of component.According to one embodiment, temperature measures component
640 may include the temperature sensor for being inserted into the position of interior section of main body 260,260 proximity focusing ring 240 of main body.For example,
When main body 260 is accompanied with heat transfer sheet protector, temperature sensor is inserted into heat transfer sheet protector 290.It is surveyed by temperature
Measured temperature measured by amount component 640 is sent to controller 650.
Controller 650 controls primary heater according to the temperature of the focusing ring 240 measured by temperature measurement component 640
610, secondary heater 620 and cooling component 630.According to one embodiment, controller 650 can measure structure according to by temperature
The temperature of focusing ring 240 measured by part 640 adjusts the power for being applied to primary heater 610 and secondary heater 620, and
The temperature of the adjustable Fluid Volume supplied by fluid supply unit 632 and/or the temperature of cooler 633.For example, when by temperature
When the temperature of focusing ring 240 measured by degree measurement component 640 is lower than specific range of temperatures, controller 650 increases by the second heating
The temperature of device 620, so as to influence to minimize as caused by the cooling air of the cooling fluid inside cooling channels 631, because
It improves the temperature of primary heater 610 to need specific time, reduce the fluid supplied by fluid supply unit 632
Amount, the temperature for increasing cooler 633 and the temperature for increasing cooling fluid.In addition, when as measured by temperature measurement component 640
The temperature of focusing ring 240 when being higher than specific range of temperatures, controller 650 reduces the temperature of secondary heater 620 to reduce by the
The temperature of one heater 610, the amount for increasing the fluid supplied by fluid supply unit 632, the temperature for reducing cooler 633,
And the cold air of the cooling fluid inside cooling channels 631 is easily transmitted to focusing ring 240.Alternatively, it controls
Device 650 processed can adjust the temperature of focusing ring 240 in various ways.
Main body 260 is arranged to the ring-shaped opposite with focusing ring 240 below focusing ring 240.Primary heater 610,
The cooling channels 631 or Peltier device of two heaters 620 and cooling component 630 are arranged in main body 260.Main body
260 may include dielectric material, and dielectric material includes quartz, yttrium oxide (Y2O3) and aluminium oxide (Al2O3At least one of).
For example, main body 260 may include quartz, yttrium oxide (Y2O3) and aluminium oxide (Al2O3Any of).
Heat transfer sheet 280 can be between focusing ring 240 and main body 260.Heat transfer sheet 280 includes showing than main body 260
The higher rate of heat transfer of rate of heat transfer material.For example, heat transfer sheet 280 may include silicon (Si).Since heat transfer sheet 280 can be with
Between focusing ring 240 and main body 260, so the rate of heat transfer between focusing ring 240 and main body 260 increases, from there through
Be conducive to adjust the temperature of focusing ring 240 using primary heater 610 and cooling component 630.
Support unit 200 can also include heat transfer sheet protector 290.Heat transfer sheet protector 290 prevent heat transfer sheet 280 due to
Plasma and be damaged or deform.According to one embodiment, heat transfer sheet protector 290 is arranged in focusing ring 240 and main body
The inner surface and the outer surface of heat transfer sheet 280 is surrounded between 260.Heat transfer sheet protector 290 can be set with 260 integral type of main body
It sets.
Fig. 4 is the sectional view for showing a part of support unit 200a for another embodiment conceived according to the present invention.
It is different from Fig. 3 with reference to Fig. 4, the shape and heat transfer sheet 280a and heat transfer sheet protector 290a of focusing ring 240a and main body 260a
Structure can be arranged differently than.
According to one embodiment, the bottom surface of focusing ring 240a is stair-stepping, so that the height of interior zone 241 is not
It is same as the height of perimeter 242.For example, interior zone 241, which can be set into, is higher than perimeter 242.
The top surface of main body 260a is in staged to engage with the bottom surface of focusing ring 240a.
Heat transfer sheet 280a includes internal sheets 281 and outer plate 282.Internal sheets 281 are set as corresponding with interior zone 241.
Outer plate 282 is set as corresponding with perimeter 242.
Heat transfer sheet protector 290a includes internal Protection part 291 and exterior protection part 292.Internal Protection part 291 is arranged to
Around the inner surface and the outer surface of internal sheets 281.Exterior protection part 292 is arranged about the inner surface and appearance of outer plate 282
Face.
In addition, the element of support unit 200a, structure and function can with the element of the support unit 200 of Fig. 3, structure and
Function is essentially identical.
As described above, the equipment conceived according to the present invention, adjusts the configuration of the temperature of focusing ring and the temperature for adjusting support plate
The configuration of degree is different, to accurately adjust the temperature of focusing ring.In addition, conceiving according to the present invention, due to being focused by adjusting
The temperature of ring is able to more accurately adjust the temperature of the fringe region of the substrate by focusing ring support, it is possible to in substrate
Heart district domain and fringe region are equably handled, and can improve the reproducibility of the technique for substrate.
As described above, the embodiment conceived according to the present invention, which can accurately adjust the temperature of focusing ring.
In addition, the embodiment conceived according to the present invention, which can equably handle substrate.
In addition, the embodiment conceived according to the present invention, which can improve the reproducibility of the technique for substrate.
Although describing present inventive concept by reference to exemplary embodiments of the present invention, for the general of this field
For logical technical staff it is readily apparent that the spirit for not departing from the present inventive concept as described in the following claims with
Various changes and modifications can be made to it in the case where range.
Claims (17)
1. a kind of equipment for handling substrate, the equipment include：
Chamber, the chamber have the processing space for handling the substrate；
Support unit, support unit substrate described in the processing space inner support；
Process gas is supplied in the processing space by gas supply unit, the gas supply unit；With
Plasma source, the plasma source generate plasma based on the process gas in the processing space,
Wherein the support unit includes：
Support plate, the substrate are placed in the support plate；
Focusing ring, the focusing ring are arranged to around the substrate supported by the support plate；With
Temperature control unit, the temperature control unit adjust the temperature of the focusing ring, and
Wherein the temperature control unit includes：
Primary heater, the primary heater are arranged to heat the focusing ring below the focusing ring and be arranged to and institute
It is opposite to state focusing ring；With
Cooling component, the cooling component are arranged below the primary heater.
2. equipment according to claim 1, wherein the support unit further includes main body, the main body setting is circularized simultaneously
Below the focusing ring, and
Wherein the cooling component is arranged in the body interior.
3. equipment according to claim 2, wherein the temperature control unit further includes secondary heater, described second adds
Hot device is mounted at the position opposite with the primary heater between the primary heater and the cooling component.
4. equipment according to claim 3, wherein the primary heater and the secondary heater are arranged in the master
In body.
5. equipment according to claim 2, wherein the support unit further includes heat transfer sheet, the heat transfer sheet is between described
Between focusing ring and the main body, and
Wherein the heat transfer sheet has rate of heat transfer more higher than the rate of heat transfer of the main body.
6. equipment according to claim 5, wherein the support unit further includes heat transfer sheet protector, the heat transfer sheet is anti-
Guard is around the inner surface of the heat transfer sheet and the outer surface of the heat transfer sheet.
7. equipment according to claim 6, wherein the heat transfer sheet protector is arranged to be attached to by the main body.
8. equipment according to claim 5, wherein the focusing ring has a bottom surface, the bottom surface in staged with
Difference in height is formed between the interior zone and perimeter of the bottom surface,
Wherein the top surface of the main body is in staged to engage with the bottom surface of the focusing ring, also,
Wherein the heat transfer sheet includes：
Internal sheets corresponding with the interior zone；With
Outer plate corresponding with the perimeter.
9. equipment according to claim 8, wherein the heat transfer sheet protector includes：
Internal Protection part, the internal Protection part surround the inner surface and the outer surface of the internal sheets；With
Exterior protection part, the exterior protection part surround the inner surface and the outer surface of the outer plate.
10. equipment according to claim 3, wherein the temperature control unit includes：
Temperature measures component, and the temperature measurement component measures the temperature of the focusing ring；With
Controller, the controller control first heating according to the temperature measured by temperature measurement component
Device, the secondary heater and the cooling component.
11. equipment according to claim 10, wherein when the focusing ring for measuring component measurement by the temperature
When temperature is lower than specific range of temperatures, the controller increases the temperature of the primary heater, increases the cooling component
Temperature, and increase the temperature of the secondary heater；And
Wherein, described when measuring the temperature of the focusing ring of component measurement by the temperature higher than specific range of temperatures
Controller reduces the temperature of the primary heater, reduces the temperature of the cooling component, and reduces the secondary heater
Temperature.
12. equipment according to claim 2, wherein the focusing ring includes silicon Si, silicon carbide SiC, quartz, yttrium oxide
Y2O3And aluminium oxide Al2O3At least one of material, and
Wherein the main body includes quartz, yttrium oxide Y2O3And aluminium oxide Al2O3At least one of material.
13. a kind of for supporting the support unit of the substrate, the support unit in the processing space for handling substrate
Including：
Support plate, the substrate are placed in the support plate；
Focusing ring, the focusing ring are arranged to around the substrate supported by the support plate；With
Temperature control unit, the temperature control unit adjust the temperature of the focusing ring,
Wherein the temperature control unit includes：
Primary heater, the primary heater are arranged to heat the focusing ring below the focusing ring and be arranged to and institute
It is opposite to state focusing ring；
Secondary heater, the secondary heater are mounted on position opposite with the primary heater below the primary heater
Place is set, and
Cooling component, the cooling component are arranged below the secondary heater.
14. support unit according to claim 13, wherein the support unit further includes main body, the main body setting
It circularizes and is located at below the focusing ring, and
Wherein the cooling component is arranged in the body interior.
15. support unit according to claim 14, wherein the primary heater and secondary heater setting exist
In the main body.
16. support unit according to claim 15 further includes heat transfer sheet, the heat transfer sheet is between the focusing ring and institute
It states between main body, and
Wherein the heat transfer sheet has rate of heat transfer more higher than the rate of heat transfer of the main body.
17. support unit according to claim 16 further includes heat transfer sheet protector, the heat transfer sheet protector surrounds institute
State the inner surface and the outer surface of heat transfer sheet.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020170059004A KR102039969B1 (en) | 2017-05-12 | 2017-05-12 | Supporting unit and substrate treating apparatus including the same |
| KR10-2017-0059004 | 2017-05-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108878247A true CN108878247A (en) | 2018-11-23 |
| CN108878247B CN108878247B (en) | 2021-03-23 |
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ID=64097420
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810455182.XA Active CN108878247B (en) | 2017-05-12 | 2018-05-14 | Support unit and substrate processing apparatus including the same |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11062885B2 (en) |
| KR (1) | KR102039969B1 (en) |
| CN (1) | CN108878247B (en) |
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| CN112786422A (en) * | 2019-11-08 | 2021-05-11 | 中微半导体设备(上海)股份有限公司 | Focusing ring, plasma processor and method |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR102039969B1 (en) | 2019-11-05 |
| US20180330925A1 (en) | 2018-11-15 |
| KR20180125091A (en) | 2018-11-22 |
| US11062885B2 (en) | 2021-07-13 |
| CN108878247B (en) | 2021-03-23 |
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