CN101471275A - Device for holding substance to be processed - Google Patents
Device for holding substance to be processed Download PDFInfo
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- CN101471275A CN101471275A CNA200710304242XA CN200710304242A CN101471275A CN 101471275 A CN101471275 A CN 101471275A CN A200710304242X A CNA200710304242X A CN A200710304242XA CN 200710304242 A CN200710304242 A CN 200710304242A CN 101471275 A CN101471275 A CN 101471275A
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- focusing ring
- communication groove
- gas communication
- pedestal
- holding device
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Abstract
The invention relates to a clamping device of handled objects, comprising a base, an insulating layer and a focusing ring which are arranged above the base, and is characterized in that the focusing ring is arranged at the periphery of the insulating layer, the connecting position of the focusing ring and the base is further provided with at least one gas circulating trench, the area of the gas circulating trench accounts for 5 to 95% of the area of the focusing ring arranged at the connecting position, and the depth of the gas circulating trench is 5 to 95% of the entire thickness of the focusing ring and the entire thickness of the base. Because the gas circulating trench is arranged at the connecting position of the focusing ring and the base in the invention, the heat conduction gas can have better liquidity by the arrangement of the area and the depth of the gas circulating trench, thereby the whole temperature of the focusing ring can be better controlled in the process of the whole chip, therefore, the semiconductor chips which need to finely process can be substantially improved in the treatment effect.
Description
Technical field
The present invention relates to a kind of holding device of handled object, particularly relate to a kind of holding device that in plasma processes, has the focusing ring structure.
Background technology
In the integrated circuit fabrication process process, particularly in etching, physical vapour deposition (PVD) and the glossing, in order to fix, to support and transmit semiconductor wafer (hereinafter to be referred as wafer) and realizing temperature control, avoid mobile or inconsistent phenomenon in technical process, occurring, often need to use electrostatic chuck.And this class electrostatic chuck apparatus is applied in the semiconductor plasma etching reaction chamber at large.
Electrostatic chuck adopts the mode of electrostatic attraction to fix wafer, compares with vacuum cup with traditional mechanical chuck to have lot of advantages.For example, electrostatic chuck has reduced in the process of using traditional chuck, because the damage that is difficult to repair that mechanical reasons such as pressure, collision cause wafer, in addition, adopt after the electrostatic attraction because mechanical fixation useless, just increased wafer effective working (finishing) area, reduced the particle contamination that produces owing to mechanical collision and effectively in carrying out heat conduction.
Typical electrostatic chuck is made up of two parts: insulating barrier 2a and pedestal 2 (referring to Fig. 1 and Fig. 2).Insulating barrier adopts the ceramic material processing and manufacturing at present or makes by the form of ceramic spraying, and DC electrode layer 2b is imbedded in the insulating barrier by the mode of sintering or spraying.Electrostatic chuck mainly is to utilize the electrostatic attraction that produces between DC electrode layer 2b and the wafer W to reach the purpose of fixed wafer W.Pedestal 2 is used for supports insulative layer 2a.
Referring to Fig. 1 and Fig. 2, in the plasma process configuration, typical configuration includes electrostatic chuck, and this electrostatic chuck comprises insulating barrier 2a and pedestal 2.And be provided with and embed focusing ring 1 and the basic ring 6 that surrounds this electrostatic chuck.Processed wafer W is placed on the pedestal 2 of electrostatic chuck, more accuracy saying so is placed on wafer W on the insulating barrier 2a, is embedded in simultaneously by in the formed groove of the upper surface of focusing ring 1.
In pedestal 2, be provided with from outside importing gas and to wafer W and carry out temperature controlled gas feed path 3a.In Fig. 1 and Fig. 2, gas supply source, passage base section and the channel branch part of this gas passage 3a is not shown.But this channel branch part can connect among the insulating barrier 2a of electrostatic chuck, and is connected with a plurality of openings above the insulating barrier 2a.The gas supply source can be supplied with the gases such as helium with heat-conduction medium function, thereby can carry out temperature control to the wafer W that is kept.
DC power supply 5 is connected with electrostatic chuck by connecting line 4a, and the insulating barrier 2a inside of electrostatic chuck is provided with battery lead plate 2b (can time one pole, also can be bipolar).When DC power supply 5 when battery lead plate 2b applies DC power supply, just can produce Coulomb attraction power, wafer W is adsorbed on the electrostatic chuck.
Usually, when utilizing plasma processing apparatus to handle, when wafer W being adsorbed and remains on the electrostatic chuck, also utilize vacuum system, high frequency electric source and the electrode etc. that do not illustrate among the figure that plasma takes place, this plasma is by the focusing ring 1 on the pedestal 2, converge on the wafer W, wafer W is carried out plasma treatment (as etching processing, chemical vapour deposition (CVD) and physical vapour deposition (PVD) etc.).Through being exposed to the processing in the plasma, the temperature of wafer W raises, but by Temperature-controlled appliance above-mentioned helium is blowed to the wafer W back side from gas passage 3a, can carry out the uniformity of temperature control and assurance temperature.
But its defective is, in the structure of this plasma processing apparatus,, just focusing ring 1 is embedded into (referring to Fig. 1) in the pedestal 2 because consideration is easy to maintenance, perhaps at first be embedded on the basic ring 6, again focusing ring 1 and basic ring 6 be embedded into (referring to Fig. 2) on the pedestal 2 jointly; Have tiny vacuum gap between focusing ring 1 and pedestal 2 or basic ring 6, like this, heat transfer property is bad between the two, can not obtain good temperature control as wafer W.Therefore, when wafer W was handled, the temperature of focusing ring 1 increased along with the process time and raises, and surpasses the temperature of wafer W.Because above-mentioned influence is affected the etching homogeneity at wafer W edge, so this part etching is insufficient, perhaps produces problems such as etching selection ratio reduction.
In addition, because the gap between focusing ring 1 and pedestal 2 or the basic ring 6 is very tiny, between also simultaneously also having influenced from the electrostatic chuck to the wafer W RF impedance path of the plasma in zone and from the electrostatic chuck to the focusing ring the close purity of the isoionic RF impedance path coupling in 1 zone, thereby influenced the plasma density at wafer W edge, so the etching homogeneity at wafer W edge is affected.
Existing technical scheme one: referring to Fig. 1, disclosing among the Chinese patent CN01811344.3 increases by the second dielectric layer 2c or increases electrode 2d on pedestal 2, can provide direct current by DC power supply 5, produce Johnson-La Bake power, thus absorption focusing ring 1.It has reduced the gap of focusing ring 1 with pedestal 2, has increased heat transfer gas passage 3b simultaneously, and heat transfer gas such as helium etc. can directly blow to focusing ring 1 bottom surface, thereby reduces focusing ring 1 temperature.
The shortcoming of technique scheme one is: this scheme has used heat transfer gas to reduce focusing ring 1 temperature, but the heat transfer gas that heat transfer gas and the control of wafer W temperature are used is a passage, and gas pressure and flow are difficult to control.Simultaneously, because the existence of Electrostatic Absorption power, make between focusing ring 1 and the pedestal 2 gap very little, the thermally conductive gas liquid flowability is very poor.
Existing technical scheme two: referring to Fig. 2, disclose among the Chinese patent CN200610159201.1 and on pedestal 2, placed basic ring 6, focusing ring 1 is placed on the basic ring 6, be provided with electrode 6a in the basic ring 6, can provide direct current by DC power supply 5b, produce Electrostatic Absorption power, thus absorption focusing ring 1.It has reduced the gap of focusing ring 1 with pedestal 2, has increased heat transfer gas passage 3b simultaneously, and heat transfer gas such as helium etc. can directly blow to focusing ring 1 bottom surface, thereby reduces focusing ring 1 temperature.
The shortcoming of technique scheme two is: this scheme has used heat transfer gas to reduce focusing ring 1 temperature.But the same because existence of Electrostatic Absorption power makes between focusing ring 1 and the pedestal 2 gap very little, heat transfer gas mobile very poor.And,, can't accurately control heat transfer gas because do not measure the temperature of focusing ring 1.
Summary of the invention
Technical problem to be solved by this invention is, overcome the defective of above-mentioned prior art and provide a kind of have the good gas conductive structure, and can accurately stablize the chuck assembly of controlling the focusing ring temperature with focusing ring structure.
For achieving the above object, the present invention takes following design:
A kind of holding device of handled object, the insulating barrier and the focusing ring that comprise pedestal and be positioned at the pedestal top, described focusing ring be positioned at described insulating barrier around, also be provided with at least one gas communication groove in the junction of described focusing ring and described pedestal, the area of described gas communication groove accounts for 5～95% of described junction focusing ring area, and the degree of depth of described gas communication groove is 5～95% of described focusing ring integral thickness or a described pedestal integral thickness.
Preferably, described gas communication groove is parallel annular ditch groove or labyrinth shape groove or zigzag groove, and is equipped with closed-loop at the inner edge and the outer rim place of described gas communication groove integral body.Further, the area of described gas communication groove accounts for 40～80% of described junction focusing ring area.The degree of depth of described gas communication groove is 40～80% of a described focusing ring integral thickness.Described gas communication groove to small part is positioned at the bottom of described focusing ring, perhaps is positioned at the top of described pedestal to small part.
Preferably, described gas communication groove is the raised structures of arranging radially.The area of described gas communication groove accounts for 40～80% of described junction focusing ring area.And inner edge and outer rim place in described gas communication groove integral body are equipped with closed-loop.The degree of depth of described gas communication groove is 40～80% of a described focusing ring integral thickness.Described gas communication groove to small part is positioned at the bottom of described focusing ring, perhaps is positioned at the top of described pedestal to small part.
Preferably, also be provided with the gas passage that is connected with described insulating barrier and focusing ring respectively in described pedestal, every gas passage all links to each other with control section with the gas supply source.
Preferably, described focusing ring is made by electric conducting material or semi-conducting material.The material of described focusing ring is silicon or silicon nitride or carborundum or aluminium nitride.The material of described focusing ring is identical with wafer material to be processed.
Preferably, the thickness on the described gas communication groove of the junction of described focusing ring and wafer distance top is 1.5～3mm.
Advantage of the present invention is: because the present invention is provided with the gas communication groove in the junction of focusing ring and pedestal, and, by the area and the degree of depth that this gas communication groove is set, make heat transfer gas can have better flowability, and then make the temperature of focusing ring integral body in the entire wafer processing technology, can both obtain good temperature control, so, can be so that need the semiconductor wafer of retrofit on treatment effect, to be improved greatly.
Description of drawings
Fig. 1 and Fig. 2 are for having the structural representation of the holding device of focusing ring structure in the prior art;
Fig. 3 is a structural representation of the present invention;
Fig. 4 is the cutaway view of focusing ring part of the present invention;
Fig. 5, Fig. 6, Fig. 7, Fig. 8, Fig. 9 and Figure 10 are the schematic diagram of gas communication trench portions among each embodiment of the present invention.
Embodiment
Referring to Fig. 3, the preferred embodiment of the holding device of a kind of handled object of the present invention shown in it, insulating barrier 13a and focusing ring 11 that described chuck assembly 13 comprises pedestal 13b and is positioned at pedestal 13b top, preferably, can also comprise basic ring 12, but for the present invention, described basic ring 12 can be interpreted as the part of pedestal 13b, described focusing ring 11 be positioned at described insulating barrier 13a around, pending wafer W is placed on the chuck assembly 13, more precisely wafer W is placed on the insulating barrier 13a, embed simultaneously in the formed groove of focusing ring 11 upper surfaces, also be provided with at least one gas communication groove 11c in the junction 18 of described focusing ring 11 and described pedestal 3b.Described gas communication groove 11c can be positioned at the bottom of described focusing ring 11 to small part, preferably, all is positioned at the bottom of focusing ring 11, so that be processed in the lump when manufacturing focusing ring 11; Perhaps be positioned at the top of described pedestal 13b, preferably, all be located at the top of pedestal 13b, so that when manufacturing pedestal 13b, be processed in the lump to small part; Certainly also comprise such situation: part is positioned at the bottom of focusing ring 11, the top that part is positioned at pedestal 13b, and two-part position and size cooperatively interact, and form gas communication groove 11c jointly.In addition, owing to preferably can also comprise basic ring 12 in the present embodiment, so the junction of basic ring 12 and focusing ring 11 can be provided with the gas communication groove 11c of above-mentioned three kinds of situations equally.Because pin for the purpose of the present invention, described basic ring 12 may be interpreted as the part of pedestal 13b, so the junction of described focusing ring 11 and basic ring 12 also can be interpreted as belonging to the junction 18 of described focusing ring 11 and pedestal 3b.The area of described gas communication groove 11c accounts for 5～95% of described junction 18 focusing ring areas, and the degree of depth of described gas communication groove 11c is 5～95% of described focusing ring 11 integral thickness or a described pedestal integral thickness.
Referring to Fig. 4, preferably, described focusing ring 11 is 1.5～3mm with the thickness 11g on the described gas communication groove 11c of the distance top, junction of wafer, because the upper surface of focusing ring can form a groove, in order to place wafer W, so the thickness 11g of this part is littler than the integral thickness 11f of focusing ring 11, be the minimum thickness on the focusing ring 11.Therefore, consider problems such as part material intensity, need to guarantee that minimum thickness 11g between 1.5～3mm, is preferably 2mm.Certainly, also can adopt the structure of groove depth gradual change, that is: shallow and near the groove at minimum thickness 11g place away from the groove depth at minimum thickness 11g place.
Referring to Fig. 5, Fig. 6, Fig. 7, Fig. 8, Fig. 9 and Figure 10, there is shown the schematic diagram of the various embodiment of gas communication groove 11c of the present invention.Wherein, Fig. 5 is parallel annular ditch groove 11c with Fig. 6; Fig. 7 has the formed groove 11c of raised structures 11d that arranges radially; Fig. 8 is the zigzag groove; Fig. 9 and Figure 10 are the labyrinth shape groove.Inner edge and outer rim place in above-mentioned all gases circulation groove integral body are equipped with closed- loop 11b and 11a, to guarantee that gas can not leak.
Nearer further, as shown in Figure 4, the area of described gas communication groove 11c accounts for 40～80% of described junction 18 focusing ring areas, is preferably 65%; The degree of depth 11e of described gas communication groove 11c is 40～80% of described focusing ring integral thickness 11f, is preferably 65%.Because in processing of wafers technology, wafer small-sized, simultaneously, the size of described chuck assembly and focusing ring 11 is all very little, so, if the proportion of above-mentioned size is excessive or too small, all be difficult to reach gas communication effect smoothly.Therefore, the present inventor determines that through after a large amount of tests preferable range is 40～80%, is preferably 65%.
Preferably, also be provided with the gas passage that is connected with described insulating barrier and focusing ring respectively in described pedestal, every gas passage all links to each other with control section with the gas supply source.
Particularly, as shown in Figure 3, in pedestal 13b, be provided with from outside importing gas and to wafer W and carry out temperature controlled gas feed path 16 and gas feed path 14, these two gas passages 16 link to each other with 15 with control section 17 with the gas supply source respectively with 14, not shown passage base section and channel branch part; The pressure and the flow of heat transfer gas can be controlled and regulate to gas supply source and control section 17 and 15.Channel branch partly connects the insulating barrier 13a in the electrostatic chuck 13, and is connected with a plurality of openings above the insulating barrier 13a.Have the helium of heat-conduction medium function etc. from this gas supply source supply, can carry out temperature control the wafer that is kept.
Preferably, described focusing ring is made by electric conducting material or semiconductor.Further, the material of described focusing ring is silicon or silicon nitride or carborundum or aluminium nitride.Best, the material of described focusing ring is identical with wafer material to be processed.Certainly, be not limited in these materials.
Obviously, those of ordinary skill in the art can constitute various types of holding devices or focusing ring structure with the holding device of a kind of handled object of the present invention.Simultaneously, the present invention also is not limited to etching technics, can be used for other plasma processes; The processing technology that also can be used for LCD.
The foregoing description is only for the usefulness that the present invention is described; and be not to be limitation of the present invention; the those of ordinary skill in relevant technologies field; without departing from the present invention; can also make various variations and modification; therefore all technical schemes that are equal to also should belong to category of the present invention, and scope of patent protection of the present invention should be limited by each claim.
Claims (10)
1, a kind of holding device of handled object, the insulating barrier and the focusing ring that comprise pedestal and be positioned at the pedestal top, described focusing ring be positioned at described insulating barrier around, it is characterized in that: also be provided with at least one gas communication groove in the junction of described focusing ring and described pedestal, the area of described gas communication groove accounts for 5～95% of described junction focusing ring area, and the degree of depth of described gas communication groove is 5～95% of described focusing ring integral thickness or a described pedestal integral thickness.
2, holding device according to claim 1 is characterized in that: described gas communication groove is parallel annular ditch groove or labyrinth shape groove or zigzag groove, and is equipped with closed-loop at the inner edge and the outer rim place of described gas communication groove integral body.
3, holding device according to claim 1 is characterized in that: described gas communication groove is the raised structures of arranging radially, and is equipped with closed-loop at the inner edge and the outer rim place of described gas communication groove integral body.
4, according to claim 2 or 3 described holding devices, it is characterized in that: the area of described gas communication groove accounts for 40～80% of described junction focusing ring area, and the degree of depth of described gas communication groove is 40～80% of a described focusing ring integral thickness.
5, holding device according to claim 4 is characterized in that: described gas communication groove to small part is positioned at the bottom of described focusing ring, perhaps is positioned at the top of described pedestal to small part.
6, holding device according to claim 1 is characterized in that: also be provided with the gas passage that is connected with described insulating barrier and focusing ring respectively in described pedestal, every gas passage all links to each other with control section with the gas supply source.
7, holding device according to claim 1 is characterized in that: described focusing ring is made by electric conducting material or semi-conducting material.
8, holding device according to claim 7 is characterized in that: the material of described focusing ring is silicon or silicon nitride or carborundum or aluminium nitride.
9, holding device according to claim 7 is characterized in that: the material of described focusing ring is identical with wafer material to be processed.
10, holding device according to claim 1 is characterized in that: the thickness on the described gas communication groove of the distance top, junction of described focusing ring and wafer is 1.5～3mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710304242XA CN101471275B (en) | 2007-12-26 | 2007-12-26 | Device for holding substance to be processed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710304242XA CN101471275B (en) | 2007-12-26 | 2007-12-26 | Device for holding substance to be processed |
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| CN101471275A true CN101471275A (en) | 2009-07-01 |
| CN101471275B CN101471275B (en) | 2011-04-06 |
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| CN200710304242XA Active CN101471275B (en) | 2007-12-26 | 2007-12-26 | Device for holding substance to be processed |
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| CN106548917A (en) * | 2015-09-21 | 2017-03-29 | 中微半导体设备(上海)有限公司 | Adjust the device and its temperature control method of device temperature in plasma etch chamber |
| CN109594063A (en) * | 2018-12-27 | 2019-04-09 | 西安奕斯伟硅片技术有限公司 | A kind of extension consersion unit |
| CN111968903A (en) * | 2020-08-24 | 2020-11-20 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and processing method of focusing ring |
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| CN112786422A (en) * | 2019-11-08 | 2021-05-11 | 中微半导体设备(上海)股份有限公司 | Focusing ring, plasma processor and method |
| TWI765924B (en) * | 2016-10-28 | 2022-06-01 | 美商蘭姆研究公司 | Planar substrate edge contact with open volume equalization pathways and side containment |
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| JP4559595B2 (en) * | 2000-07-17 | 2010-10-06 | 東京エレクトロン株式会社 | Apparatus for placing object to be processed and plasma processing apparatus |
| US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
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| JP2017533582A (en) * | 2014-09-19 | 2017-11-09 | 北京北方華創微電子装備有限公司Ｂｅｉｊｉｎｇ Ｎａｕｒａ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｅｑｕｉｐｍｅｎｔ Ｃｏ．， Ｌｔｄ． | Bearing device and semiconductor processing equipment |
| WO2016041519A1 (en) * | 2014-09-19 | 2016-03-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bearing apparatus and semiconductor processing device |
| CN106548917A (en) * | 2015-09-21 | 2017-03-29 | 中微半导体设备(上海)有限公司 | Adjust the device and its temperature control method of device temperature in plasma etch chamber |
| TWI765924B (en) * | 2016-10-28 | 2022-06-01 | 美商蘭姆研究公司 | Planar substrate edge contact with open volume equalization pathways and side containment |
| US11443975B2 (en) | 2016-10-28 | 2022-09-13 | Lam Research Corporation | Planar substrate edge contact with open volume equalization pathways and side containment |
| CN109594063A (en) * | 2018-12-27 | 2019-04-09 | 西安奕斯伟硅片技术有限公司 | A kind of extension consersion unit |
| CN112185787A (en) * | 2019-07-04 | 2021-01-05 | 中微半导体设备(上海)股份有限公司 | Radio frequency electrode assembly for plasma processing apparatus and plasma processing apparatus |
| CN112185787B (en) * | 2019-07-04 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | RF electrode assembly of plasma processing apparatus and plasma processing apparatus |
| CN112331545B (en) * | 2019-08-05 | 2024-02-09 | 铠侠股份有限公司 | Plasma processing apparatus and plasma processing method |
| CN112331545A (en) * | 2019-08-05 | 2021-02-05 | 铠侠股份有限公司 | Plasma processing apparatus and plasma processing method |
| CN112786422A (en) * | 2019-11-08 | 2021-05-11 | 中微半导体设备(上海)股份有限公司 | Focusing ring, plasma processor and method |
| CN112786422B (en) * | 2019-11-08 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | Focusing ring, plasma processor and method |
| CN111968903A (en) * | 2020-08-24 | 2020-11-20 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and processing method of focusing ring |
| CN111968903B (en) * | 2020-08-24 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and method for processing focusing ring |
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Address after: No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, 100176 Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 south two floor, M5 building, 1 Jiuxianqiao East Road, Chaoyang District, Beijing. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |