CN112786422A - Focusing ring, plasma processor and method - Google Patents
Focusing ring, plasma processor and method Download PDFInfo
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- CN112786422A CN112786422A CN201911089041.1A CN201911089041A CN112786422A CN 112786422 A CN112786422 A CN 112786422A CN 201911089041 A CN201911089041 A CN 201911089041A CN 112786422 A CN112786422 A CN 112786422A
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- heat
- focusing ring
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 125
- 239000000110 cooling liquid Substances 0.000 claims abstract description 39
- 230000033228 biological regulation Effects 0.000 claims description 7
- 239000013013 elastic material Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 abstract description 48
- 238000005530 etching Methods 0.000 abstract description 21
- 230000000694 effects Effects 0.000 description 17
- 239000007779 soft material Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 4
- 239000002826 coolant Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000012809 cooling fluid Substances 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- -1 perfluoro Chemical group 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229940105963 yttrium fluoride Drugs 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
The invention discloses a focusing ring, a plasma processor and a method, wherein the plasma processor comprises a reaction cavity, an electrostatic chuck is arranged in the reaction cavity and used for supporting a substrate, the focusing ring is arranged around the periphery of the electrostatic chuck, the focusing ring for realizing temperature adjustment through heat exchange comprises an inner side area positioned below the substrate and an outer side area surrounding the inner side area, a heat conduction component is arranged above the inner side area, and when the substrate is adsorbed by the electrostatic chuck, the back surface of the substrate is contacted with the heat conduction component. The invention sets cooling channel in the focusing ring or between the focusing ring and the insert ring or inside the insert ring or other corresponding positions, for the cooling liquid to flow for cooling the focusing ring, and sets heat conduction component between the substrate and the focusing ring, to enhance the heat conduction efficiency between the focusing ring and the substrate by heat conduction, to improve the etching rate of the substrate edge, and further to improve the etching rate uniformity of the substrate.
Description
Technical Field
The invention relates to the field of plasma etching, in particular to a focusing ring based on a cooling system, a plasma processor and a method.
Background
In the prior art, a temperature of a substrate (Wafer) is generally controlled by using a temperature-controllable Electrostatic chuck (ESC) in a plasma processing apparatus. The substrate is typically larger in size than the electrostatic chuck, resulting in an uncontrolled edge temperature of the substrate.
In the etching process, the temperature of a Focus Ring (Focus Ring) close to the edge of the substrate is increased, and the Focus Ring and an insert Ring below the Focus Ring in the prior art do not have a cooling function, so that the etching rates at the middle and the edge of the substrate are different due to the non-uniformity of the temperature of the middle and the edge of the substrate, and the etching rate of the substrate is reduced along with the temperature increase, so that the etching rate of the substrate shows a phenomenon that the middle is high and the edge is low.
Therefore, it is desirable to develop a plasma processor that improves non-uniformity of the etch rate of the substrate by cooling down the focus ring.
Disclosure of Invention
The invention aims to provide a focusing ring, a plasma processor and a plasma processing method.A cooling channel for circulating cooling liquid is arranged in the focusing ring for cooling the focusing ring, and a heat conduction component can be arranged between a substrate and the focusing ring at the same time, so that the heat conduction efficiency between the focusing ring and the substrate is enhanced by utilizing the heat conduction effect, the etching rate of the edge of the substrate is improved, and the uniformity of the etching rate of the substrate is further improved.
In order to achieve the purpose, the invention is realized by the following technical scheme: a focus ring for a plasma processor comprising a reaction chamber, an electrostatic chuck disposed in the reaction chamber for supporting a substrate, the focus ring being disposed around a periphery of the electrostatic chuck for temperature adjustment by heat exchange, the focus ring including an inner region disposed below the substrate and an outer region surrounding the inner region, a heat transfer member being disposed above the inner region, a backside of the substrate being in contact with the heat transfer member when the substrate is attracted by the electrostatic chuck.
Preferably, a heat exchange channel is arranged inside the focus ring, the heat exchange channel comprises a heat exchange medium inlet and a heat exchange medium outlet, and a heat exchange medium enters the heat exchange channel through the heat exchange medium inlet to realize temperature adjustment of the focus ring.
Preferably, the heat exchange channel is filled with a cooling liquid, heat of the edge region of the substrate is transferred to the focus ring through a heat conduction component, and the cooling liquid is used for absorbing heat of the focus ring.
Preferably, the heat conduction member is in direct contact with the substrate or conducts heat through an intermediate heat conduction member.
Preferably, the heat conductive member is made of an elastic material.
Preferably, the heat conduction component is an integral annular structure or a plurality of mutually independent arc-shaped structures.
The invention also provides a plasma processor which comprises a reaction cavity, wherein an electrostatic chuck for bearing a substrate is arranged in the reaction cavity, the electrostatic chuck is provided with the focusing ring around the electrostatic chuck, and an insert ring is arranged below the focusing ring.
Preferably, a heat exchange channel is arranged inside the focus ring, the heat exchange channel comprises a heat exchange medium inlet and a heat exchange medium outlet, and a heat exchange medium enters the heat exchange channel through the heat exchange medium inlet to realize temperature adjustment of the focus ring.
Preferably, a heat exchange channel is arranged in the insert ring, a heat conduction layer is arranged between the focus ring and the insert ring, and/or a heat exchange channel is arranged between the focus ring and the insert ring, so that the temperature of the focus ring is adjusted.
Preferably, a temperature control ring is arranged below the insert ring, a heat exchange channel is arranged in the temperature control ring, and heat conduction layers are respectively arranged between the focus ring and the insert ring and between the insert ring and the temperature control ring to realize temperature regulation of the focus ring.
Preferably, the heat exchange channel is filled with a cooling liquid, heat of the edge region of the substrate is transferred to the focus ring through a heat conduction component, and the cooling liquid is used for absorbing heat of the focus ring.
The present invention further provides a method of controlling the temperature of a substrate in a plasma processor, the method comprising the steps of:
placing the substrate on an electrostatic chuck in a plasma processor;
arranging a focus ring which is used for realizing temperature adjustability through heat exchange around the periphery of an electrostatic chuck for supporting a substrate, wherein the focus ring comprises an inner area positioned below the substrate and an outer area surrounding the inner area;
the focusing ring is directly or indirectly connected with a heat exchange channel, the heat exchange channel comprises a heat exchange medium inlet and a heat exchange medium outlet, and a heat exchange medium enters the heat exchange channel through the heat exchange medium inlet to realize temperature regulation of the focusing ring;
a thermally conductive member is disposed over the inner region of the focus ring, and a backside of the substrate contacts the thermally conductive member when the substrate is attracted by the electrostatic chuck.
Preferably, the heat exchange channel is filled with a cooling liquid, heat of the edge region of the substrate is transferred to the focus ring through a heat conduction component, and the cooling liquid is used for absorbing heat of the focus ring.
Compared with the prior art, the invention has the beneficial effects that: (1) according to the invention, the cooling channel is formed in the focusing ring, so that cooling liquid can circulate in the cooling channel to cool the focusing ring, the etching rate of the edge of the substrate is improved, and the uniformity of the etching rate of the substrate is further improved; (2) according to the invention, the heat conduction component is arranged between the substrate and the focusing ring, and the heat conduction efficiency between the focusing ring and the substrate is enhanced through the heat conduction effect, so that the temperature reduction effect of the edge of the substrate is better; the heat conduction component is a heat conduction ring with an annular structure, which is beneficial to enhancing the uniformity of heat conduction and improving the uniformity of etching rate of the substrate; (3) the heat conduction component is made of soft material, and when the substrate is sucked by the electrostatic chuck, the edge of the substrate is pressed on the heat conduction component made of soft material, so that the heat conduction efficiency between the focusing ring and the substrate is higher.
Drawings
FIG. 1 is a schematic view of a plasma processing apparatus according to a first embodiment of the present invention;
FIG. 1a is a schematic view of an edge ring assembly according to a first embodiment of the present invention;
FIG. 2 is a schematic view of a plasma processor apparatus according to a second embodiment of the present invention;
FIG. 2a is a schematic view of an edge ring assembly according to a second embodiment of the present invention;
FIG. 3 is a schematic view showing the mounting of a heat conductive member according to the first and second embodiments of the present invention;
FIG. 4 is a schematic view of an edge ring assembly and a temperature control ring according to a third embodiment of the present invention;
fig. 4a is a schematic view of a cooling channel structure in a temperature control ring according to a third embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, in this document, the terms "comprises," "comprising," "includes," "including," "has" or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrases "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article, or terminal that comprises the element.
Fig. 1 schematically shows a structure of an inductively coupled plasma processing apparatus, in which the plasma processing process of the present invention is performed in a vacuum reaction chamber 110. The substrate 4 is placed on an electrostatic chuck 5 within the reaction chamber 110. A dielectric window 2 is arranged above the reaction chamber 110, a radio frequency coil 3 is arranged above the dielectric window 2, a radio frequency signal is applied to the radio frequency coil 3, and an induction electric field is generated in the reaction chamber 110 by a rapidly changing induction magnetic field, so that the reaction gas is dissociated into plasma for carrying out process treatment on the substrate 4. In other embodiments, the electrostatic chuck 5 may also be used inside a capacitively coupled plasma processing apparatus.
The first embodiment is as follows:
as shown in fig. 1, the peripheral edge of the substrate 4 is provided with an edge ring assembly 100, the edge ring assembly 100 comprising a focus ring 6 and an insert ring 7, the focus ring 6 being circumferentially disposed about the periphery of the electrostatic chuck 5, the focus ring 6 being positioned above the insert ring 7.
As shown in fig. 1a, the insert ring 7 has an inner portion 71 and an outer portion 72, the inner portion 71 of the insert ring 7 can be located below the outer edge of the substrate 4, and the outer portion 72 of the insert ring 7 extends outward beyond the outer edge of the substrate 4. The dashed line in fig. 1a is the outer boundary of the substrate 4, which can also be seen generally as the boundary between the inner portion 71 and the outer portion 72. The focus ring 6 may be made of a conductive material (e.g., Si, C, or SiC) or the like, or may be made of a non-conductive material or an insulating material (e.g., alumina). The focus ring 6 covers the outer portion 72 (and in this embodiment, the inner portion 71) of the insert ring 7 to prevent the insert ring 7 from being exposed to the plasma environment. Although the focus ring 6 is directly exposed to plasma, since it is made of a material most commonly used in etching apparatuses such as Si or C or a material resistant to corrosion, the focus ring 6 is not contaminated by impurities even if it is damaged. In addition, the outer surface of the focus ring 6 may be coated with a corrosion resistant material (e.g., yttria or yttrium fluoride) to reduce wear of the focus ring.
The sum of the capacitance values of the insert ring 7 and focus ring 6 (i.e., the total capacitance at the edge of the substrate) is about the same as the capacitance value of the electrostatic chuck 5 (i.e., the total capacitance at the center region of the substrate) for improved plasma sheath. It is worth noting that in practical implementations, some deviation between the two is allowed.
As shown in fig. 1, the focus ring 6 and the insert ring 7 of the present embodiment are provided with cooling passages 8 therein. The cooling passage 8 includes a vertically arranged first branch passage 81 on the inlet side, a second branch passage (not shown in the figure) communicating therebetween, and a vertically arranged third branch passage 82 on the outlet side. The first inlet end 8a of the first branch channel 81 is introduced with the cooling liquid, and the first outlet end 81a of the first branch channel 81 is positioned inside the focusing ring 6; the second inlet end 81b of the second branch channel is communicated with the first outlet end 81a of the first branch channel 81, the second branch channel encircles the inside of the focusing ring 6, and the second outlet end 82a of the second branch channel is positioned inside the focusing ring 6; the third inlet end 82b of the third branch passage 82 is communicated with the second outlet end 82a of the second branch passage, and the third outlet end 8b of the third branch passage 82 outputs the cooling liquid after heat exchange. Therefore, the temperature of the focusing ring 6 is reduced, the etching rate of the edge of the substrate 4 is improved, and the uniformity of the etching rate of the substrate is improved. Preferably, the first and/or second and/or third branch channels 81, 82 are tubular channels.
The first inlet end 8a of the first branch channel 81 is located outside the reaction chamber, the inlet channel portion 81 extends upward through the side wall 1 of the reaction chamber from the outside of the reaction chamber in sequence, then passes through the insert ring 7 until reaching the inside of the focus ring 6, and the first outlet end 81a at the top of the first branch channel 81 is also located inside the focus ring 6. Similarly, the third outlet end 8b of the third branch channel 82 is located outside the reaction chamber, the third branch channel 82 of the cooling channel 8 starts from the third inlet end 82b inside the focusing ring 6, extends downward from the inside of the focusing ring 6, passes through the insert ring 7 and penetrates through the side wall 1 of the reaction chamber until it protrudes outside the reaction chamber, and the third inlet end 82b at the top of the third branch channel 82 is located inside the focusing ring 6. Preferably, the second branch channel communicating with the middle is an annular channel with any section surrounding the inside of the focus ring 6.
The first inlet end 8a of the first branch channel 81 is also communicated with a first cooling liquid container outside the reaction cavity; the third outlet end 8b of the third branch channel 82 is also connected to a second reservoir outside the reaction chamber for collecting the coolant flowing back. The first cooling liquid container outputs the cooling liquid of a set temperature at a constant flow rate, the cooling liquid flows into the first branch passage 81 from the inlet end and flows inside the first branch passage 81, and the cooling liquid passes through the first branch passage 81, the second branch passage, and the third branch passage 82 in this order, and finally flows out to the second container from the third outlet end 8b of the third branch passage 82.
The lower the temperature of the cooling liquid is, the better the cooling effect of the focusing ring 6 and the insert ring 7 is; the cooling effect of the focus ring 6 and the insert ring 7 becomes more remarkable as the flow rate of the cooling liquid becomes larger. The larger the diameter of the inlet channel portion 8a and/or the outlet channel portion 8b, the better the cooling effect of the focus ring 6 and the insert ring 7. Furthermore, the cooling medium introduced into the cooling channel of the present invention may be liquid or gas, as long as it can perform a cooling function, and this embodiment is not limited thereto, nor is it limited to other examples.
In this embodiment, the focus ring 6 and the insert ring 7 are connected by screws 9; a sealing ring 10 (e.g., an O-ring) is provided between the focus ring 6 and the insert ring 7, and the sealing ring 10 is fitted over the outside of the inlet channel portion 81 and/or the outlet channel portion 82 for securing a vacuum environment of the vacuum reaction chamber.
As shown in fig. 1 and 3 in combination, this embodiment provides a thermally conductive member 11 between the substrate 4 and the focus ring 6, the focus ring 6 including an inner region below the substrate and an outer region surrounding the inner region, the thermally conductive member 11 being located above the inner region, and the back surface of the substrate being in contact with the thermally conductive member 11 when the substrate is attracted by the electrostatic chuck 5. The upper end of the heat conductive member 11 is connected to the lower end of the edge of the substrate 4, and the lower end of the heat conductive member 11 is connected to the upper end of the focus ring 6. Therefore, when the cooling channel is filled with the cooling liquid, the heat of the edge region of the substrate is transferred to the focus ring 6 through the heat conductive member 11, and the cooling liquid absorbs the heat of the focus ring 6.
Compare among the prior art between substrate and the focus ring only through heat radiation and few partial thermal convection carry out the heat conduction, the temperature adjustable range at heat conduction efficiency low and substrate edge is less, the cooling effect at substrate edge is more weak, this embodiment sets up heat-conducting component 11 between substrate 4 and focus ring 6, can strengthen the heat conduction efficiency between focus ring 6 and the substrate 4 through the heat-conduction effect for the cooling effect at substrate edge is better.
Illustratively, the heat conducting member 11 is in direct contact with the substrate 4 and the focus ring 6, respectively, or may be indirectly connected through an interposed intermediate member, which is not limited in the present invention as long as the heat conducting function of the substrate 4 and the focus ring 6 can be achieved, so as to enhance the heat conducting efficiency between the focus ring 6 and the substrate 4.
Optionally, the heat conduction member 11 is a heat conduction ring, and the heat conduction member 11 with a ring structure is beneficial to enhancing the uniformity of heat conduction and improving the uniformity of the etching rate of the substrate. Further, the present embodiment can also adjust the heat conduction efficiency between the focus ring 6 and the substrate 4 by changing the cross-sectional area of the heat transfer ring. The heat conductive member 11 may have a continuous annular structure; the edge region temperature control device can also be a plurality of mutually independent components which can be made of the same material or different materials, so that the temperature of the edge region at different positions can be independently controlled.
Illustratively, the heat conduction member 11 is made of a soft material (e.g., an elastic material), such as a Teflon seal ring or a perfluoro seal ring. When the substrate 4 is attracted by the electrostatic chuck 5, the edge of the substrate 4 is pressed against the heat conductive member 11 of soft material, so that the heat transfer between the focus ring 6 and the substrate 4 is more efficient.
Example two:
as shown in fig. 2, the peripheral edge of the substrate 4 is provided with an edge ring assembly 100, the edge ring assembly 100 comprising a focus ring 6 and an insert ring 7, the focus ring 6 being circumferentially disposed about the periphery of the electrostatic chuck 5, and the focus ring 6 being disposed above the insert ring 7. As shown in fig. 2a, insert ring 7 has an inner portion and an outer portion, the inner portion of insert ring 7 is located below the outer edge of substrate 4, and the outer portion of insert ring 7 extends outward beyond the outer edge of substrate 4. The dashed line in fig. 1a is the outer boundary of the substrate 4, which can also be regarded as a general boundary between the inner part and the outer part. The focus ring 6 may be made of a conductive material (e.g., Si, C, or SiC) or the like, or may be made of a non-conductive material or an insulating material (e.g., alumina).
The focus ring 6 covers the outer part (in this embodiment, the inner part) of the insert ring 7, while the outer part of the focus ring 6 extends outward beyond the outer edge of the insert ring 7. Wherein the focus ring 6 and the insert ring 7 are connected using screws 9.
In this embodiment, the focus ring 6 is connected to a cooling channel 8, the cooling channel 8 extends into the focus ring 6, and the cooling channel 8 is used for circulating a cooling fluid to cool the focus ring 6. The cooling passage 8 includes a vertically arranged first branch passage 81 on the inlet side, a second branch passage (not shown in the figure) communicating therebetween, and a vertically arranged third branch passage 82 on the outlet side. The first inlet end 8a of the first branch channel 81 is introduced with the cooling liquid, and the first outlet end 81a of the first branch channel 81 is positioned inside the focusing ring 6; the second inlet end 81b of the second branch channel is communicated with the first outlet end 81a of the first branch channel 81, the second branch channel encircles the inside of the focusing ring 6, and the second outlet end 82a of the second branch channel is positioned inside the focusing ring 6; the third inlet end 82b of the third branch passage 82 is communicated with the second outlet end 82a of the second branch passage, and the third outlet end 8b of the third branch passage 82 outputs the cooling liquid after heat exchange. Therefore, the temperature of the focusing ring 6 is reduced, the etching rate of the edge of the substrate 4 is improved, and the uniformity of the etching rate of the substrate is improved. Preferably, the first and/or second and/or third branch channels 81, 82 are tubular channels.
The first inlet end 8a of the first branch passage 81 is located outside the reaction chamber; unlike the first embodiment, the first branch channel 81 in the second embodiment does not pass through the insert ring 7 and then extend into the focus ring 6, but the first branch channel 81 extends upward from the outside of the reaction chamber and directly extends into the focus ring 6 after passing through the sidewall 1 of the reaction chamber, and the first outlet port 81a at the top of the first branch channel 81 is located inside the focus ring 6. Likewise, the third outlet end 8b of the third branch channel 82 is located outside the reaction chamber; unlike the first embodiment, the third outlet end 8b of the cooling channel 8 in the second embodiment extends downward from the inside of the focus ring 6 and directly passes through the side wall 1 of the reaction chamber to the outside of the reaction chamber, and the third inlet end 82b at the top of the third outlet end is located inside the focus ring 6. Preferably, the second branch channel communicating with the middle is an annular channel with any section surrounding the inside of the focus ring 6.
In this embodiment, the first inlet end 8a of the first branch channel 81 is also communicated with a first cooling liquid container outside the reaction cavity; the third outlet end 8b of the third branch channel 82 is also connected to a second reservoir outside the reaction chamber for collecting the coolant flowing back. The first cooling liquid container outputs the cooling liquid of a set temperature at a constant flow rate, the cooling liquid flows into the first branch passage 81 from the inlet end and flows inside the first branch passage 81, and the cooling liquid passes through the first branch passage 81, the second branch passage, and the third branch passage 82 in this order, and finally flows out to the second container from the third outlet end 8b of the third branch passage 82.
In this embodiment, the connection between the focus ring 6 and the first branch channel 81 or the third branch channel 82 is sealed by a sealing ring 10-1, and/or the connection between the first branch channel 81 or the third branch channel 82 and the wall of the reaction chamber is sealed by a sealing ring 10-2, so as to ensure the vacuum environment of the vacuum reaction chamber.
The lower the temperature of the cooling liquid is, the better the cooling effect of the focusing ring 6 and the insert ring 7 is; the cooling effect of the focus ring 6 and the insert ring 7 becomes more remarkable as the flow rate of the cooling liquid becomes larger. The larger the diameter of the first branch channel 81 and/or the third branch channel 82, the better the cooling effect of the focus ring 6 and the insert ring 7.
As shown in fig. 2 and 3 in combination, this embodiment provides a thermally conductive member 11 between the substrate 4 and the focus ring 6, the focus ring 6 including an inner region below the substrate and an outer region surrounding the inner region, the thermally conductive member 11 being located above the inner region, and the back surface of the substrate being in contact with the thermally conductive member 11 when the substrate is attracted by the electrostatic chuck 5. The upper end of the heat conductive member 11 is connected to the lower end of the edge of the substrate 4, and the lower end of the heat conductive member 11 is connected to the upper end of the focus ring 6. Therefore, when the cooling channel is filled with the cooling liquid, the heat of the edge region of the substrate is transferred to the focus ring 6 through the heat conductive member 11, and the cooling liquid absorbs the heat of the focus ring 6.
Compare among the prior art between substrate and the focus ring only through heat radiation and few partial thermal convection carry out the heat conduction, the temperature adjustable range at heat conduction efficiency low and substrate edge is less, the cooling effect at substrate edge is more weak, this embodiment sets up heat-conducting component 11 between substrate 4 and focus ring 6, can strengthen the heat conduction efficiency between focus ring 6 and the substrate 4 through the heat-conduction effect for the cooling effect at substrate edge is better.
Illustratively, the heat conducting member 11 is in direct contact with the substrate 4 and the focus ring 6, respectively, or may be indirectly connected through an interposed intermediate member, which is not limited in the present invention as long as the heat conducting function of the substrate 4 and the focus ring 6 can be achieved, so as to enhance the heat conducting efficiency between the focus ring 6 and the substrate 4.
Optionally, the heat conduction member 11 is a heat conduction ring, and the heat conduction member 11 with a ring structure is beneficial to enhancing the uniformity of heat conduction and improving the uniformity of the etching rate of the substrate. Further, the present embodiment can also adjust the heat conduction efficiency between the focus ring 6 and the substrate 4 by changing the cross-sectional area of the heat transfer ring. The heat conductive member 11 may have a continuous annular structure; the edge region temperature control device can also be a plurality of mutually independent components which can be made of the same material or different materials, so that the temperature of the edge region at different positions can be independently controlled.
Illustratively, the heat conduction member 11 is made of a soft material (e.g., an elastic material), such as a Teflon seal ring or a perfluoro seal ring. When the substrate 4 is attracted by the electrostatic chuck 5, the edge of the substrate 4 is pressed against the heat conductive member 11 of soft material, so that the heat transfer between the focus ring 6 and the substrate 4 is more efficient.
Example three:
in the first to the second embodiments, the cooling channel 8 is disposed inside the focus ring 6, and the temperature of the focus ring 6 is directly controlled, and at this time, it is only required to ensure that the flow path of the cooling channel 8 at least passes through the inside of the focus ring 6, and the cooling effect on the focus ring 6 is directly ensured, and the invention is not limited to this, as to whether the cooling channel 8 passes through the insert ring 7 or other portions and the specific path of the entire cooling channel. It should be noted that the present invention is not limited to the cooling channel set inside the focus ring 6 in the above-mentioned embodiment, but can be set between the focus ring 6 and the insert ring 7, or inside the insert ring 7, or other corresponding positions, such as inside the temperature control ring 12.
As shown in fig. 4 and 4a, the temperature control ring 12 surrounds the base 101 under the electrostatic chuck 5 and is located under the insert ring 7. Illustratively, when the cooling channel 13 is disposed within the temperature control ring 12, the cooling channel 13 includes an inlet 13a and an outlet 13b for the input and output of the cooling fluid, and an annular channel portion 13c located inside the temperature control ring 12. Meanwhile, in the embodiment, heat conducting layers are respectively arranged between the focusing ring 6 and the insert ring 7 and between the insert ring 7 and the temperature control ring 12, so that high-efficiency heat conducting action between the focusing ring 6 and the insert ring 7 and between the insert ring 7 and the temperature control ring 12 in a vacuum environment is ensured, and temperature adjustment of the focusing ring 6 is indirectly realized.
In another example, when the cooling channel is disposed inside the insert ring, the cooling channel includes an inlet and an outlet for inputting and outputting the cooling liquid, and an annular channel portion disposed inside the insert ring, and a heat conducting layer is disposed between the focus ring and the insert ring, so as to ensure efficient heat conduction between the focus ring and the insert ring in a vacuum environment, thereby indirectly achieving temperature adjustment of the focus ring.
Illustratively, when a cooling channel is provided between the focus ring and the insert ring, the cooling channel likewise comprises an inlet and an outlet for the input and output of a cooling fluid, and an annular channel portion between the focus ring and the insert ring, optionally disposed within a recess formed in the lower end of the focus ring and a recess formed in the upper end of the insert ring, for effecting temperature regulation of the focus ring.
For the above examples, the shape, path, outlet and inlet of the cooling channel are located at the same side or different sides, and the nature of the cooling medium introduced into the cooling channel is not limited in the present invention, and may be designed according to the actual application.
In summary, the invention provides a cooling channel in the focus ring or between the focus ring and the insert ring or inside the insert ring or other corresponding positions for the cooling liquid or other cooling media to flow therein, so as to cool the focus ring and improve the etching rate of the edge of the substrate and the uniformity of the etching rate of the substrate; the invention also arranges a heat conduction component between the substrate and the focusing ring, so as to enhance the heat conduction efficiency between the focusing ring and the substrate through heat conduction, and the temperature reduction effect of the edge of the substrate is better; the heat conduction component is of an annular structure, so that the uniformity of heat conduction is enhanced, and the uniformity of the etching rate of the substrate is improved; the heat conduction component of the invention is made of soft material, when the substrate is sucked by the electrostatic chuck, the edge of the substrate can be pressed on the heat conduction component of the soft material, so that the heat conduction efficiency between the focusing ring and the substrate is higher.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (13)
1. A focus ring for use in a plasma processor comprising a chamber in which an electrostatic chuck is disposed for supporting a substrate, the focus ring being disposed around the periphery of the electrostatic chuck, wherein the focus ring is temperature adjustable by heat exchange comprising an inner region underlying the substrate and an outer region surrounding the inner region, a heat conductive member being disposed above the inner region, the backside of the substrate being in contact with the heat conductive member when the substrate is attracted by the electrostatic chuck.
2. The focus ring for a plasma processor of claim 1, wherein,
the focusing ring is internally provided with a heat exchange channel, the heat exchange channel comprises a heat exchange medium inlet and a heat exchange medium outlet, and a heat exchange medium enters the heat exchange channel through the heat exchange medium inlet to realize temperature regulation of the focusing ring.
3. The focus ring for a plasma processor of claim 2, wherein,
and the heat exchange channel is filled with cooling liquid, the heat of the edge area of the substrate is transferred to the focusing ring through the heat conduction component, and the cooling liquid is used for absorbing the heat of the focusing ring.
4. The focus ring for a plasma processor of claim 1, wherein,
the heat conductive member is in direct contact with the substrate or conducts heat through an intermediate heat conductive member.
5. The focus ring for a plasma processor of claim 1, wherein,
the heat conductive member is made of an elastic material.
6. The focus ring for a plasma processor of claim 1, wherein,
the heat conduction component is an integrated annular structure or a plurality of mutually independent arc structures.
7. A plasma processor comprising a reaction chamber in which is disposed an electrostatic chuck for carrying a substrate, wherein a focus ring as claimed in any one of claims 1 to 6 is disposed around the electrostatic chuck, an insert ring being disposed below the focus ring.
8. The plasma processor of claim 7 wherein,
the focusing ring is internally provided with a heat exchange channel, the heat exchange channel comprises a heat exchange medium inlet and a heat exchange medium outlet, and a heat exchange medium enters the heat exchange channel through the heat exchange medium inlet to realize temperature regulation of the focusing ring.
9. The plasma processor of claim 7 wherein,
the heat exchange channel is arranged in the insert ring, the heat conduction layer is arranged between the focusing ring and the insert ring and/or the heat exchange channel is arranged between the focusing ring and the insert ring, so that the temperature of the focusing ring can be adjusted.
10. The plasma processor of claim 7 wherein,
a temperature control ring is arranged below the insert ring, a heat exchange channel is arranged in the temperature control ring, and heat conduction layers are respectively arranged between the focusing ring and the insert ring and between the insert ring and the temperature control ring so as to realize temperature regulation of the focusing ring.
11. The plasma processor of any of claims 7-10 wherein,
and the heat exchange channel is filled with cooling liquid, the heat of the edge area of the substrate is transferred to the focusing ring through the heat conduction component, and the cooling liquid is used for absorbing the heat of the focusing ring.
12. A method of controlling the temperature of a substrate in a plasma processor, the method comprising the steps of:
the substrate is placed on an electrostatic chuck within a plasma processor,
arranging a focus ring which is used for realizing temperature adjustability through heat exchange around the periphery of an electrostatic chuck for supporting a substrate, wherein the focus ring comprises an inner area positioned below the substrate and an outer area surrounding the inner area;
the focusing ring is directly or indirectly connected with a heat exchange channel, the heat exchange channel comprises a heat exchange medium inlet and a heat exchange medium outlet, and a heat exchange medium enters the heat exchange channel through the heat exchange medium inlet to realize temperature regulation of the focusing ring;
a thermally conductive member is disposed over the inner region of the focus ring, and a backside of the substrate contacts the thermally conductive member when the substrate is attracted by the electrostatic chuck.
13. The temperature control method according to claim 12,
and the heat exchange channel is filled with cooling liquid, the heat of the edge area of the substrate is transferred to the focusing ring through the heat conduction component, and the cooling liquid is used for absorbing the heat of the focusing ring.
Priority Applications (2)
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|---|---|---|---|
| CN201911089041.1A CN112786422B (en) | 2019-11-08 | 2019-11-08 | Focusing ring, plasma processor and method |
| TW109135592A TWI821605B (en) | 2019-11-08 | 2020-10-14 | Focusing ring, plasma processor and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911089041.1A CN112786422B (en) | 2019-11-08 | 2019-11-08 | Focusing ring, plasma processor and method |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI821605B (en) | 2023-11-11 |
| TW202119463A (en) | 2021-05-16 |
| CN112786422B (en) | 2024-03-12 |
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