CN112653415A - 一种多层膜声表面波谐振器及制造方法 - Google Patents
一种多层膜声表面波谐振器及制造方法 Download PDFInfo
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- CN112653415A CN112653415A CN202011567491.XA CN202011567491A CN112653415A CN 112653415 A CN112653415 A CN 112653415A CN 202011567491 A CN202011567491 A CN 202011567491A CN 112653415 A CN112653415 A CN 112653415A
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910012463 LiTaO3 Inorganic materials 0.000 claims abstract description 29
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 28
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 28
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 28
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 150000002500 ions Chemical class 0.000 claims abstract description 6
- 238000002513 implantation Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 abstract 2
- 238000013461 design Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 9
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 206010040844 Skin exfoliation Diseases 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02889—Means for compensation or elimination of undesirable effects of influence of mass loading
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
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CN202011567491.XA CN112653415A (zh) | 2020-12-25 | 2020-12-25 | 一种多层膜声表面波谐振器及制造方法 |
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CN202011567491.XA CN112653415A (zh) | 2020-12-25 | 2020-12-25 | 一种多层膜声表面波谐振器及制造方法 |
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CN202011567491.XA Pending CN112653415A (zh) | 2020-12-25 | 2020-12-25 | 一种多层膜声表面波谐振器及制造方法 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113114158A (zh) * | 2021-05-11 | 2021-07-13 | 中国科学院上海微***与信息技术研究所 | 一种兰姆波谐振器及弹性波装置 |
WO2022266789A1 (zh) * | 2021-06-21 | 2022-12-29 | 中国科学技术大学 | 基于高结晶度掺杂压电薄膜的声波谐振器及其制备方法 |
WO2023087211A1 (zh) * | 2021-11-18 | 2023-05-25 | 华为技术有限公司 | 一种saw谐振器及saw滤波器 |
CN116436432A (zh) * | 2023-04-17 | 2023-07-14 | 中国电子科技集团公司第二十六研究所 | 一种小型化的声表面波滤波器结构 |
CN116915211A (zh) * | 2023-09-12 | 2023-10-20 | 苏州声芯电子科技有限公司 | 一种超宽带零温漂声表面波滤波器 |
WO2024012311A1 (zh) * | 2022-07-11 | 2024-01-18 | 常州承芯半导体有限公司 | 声表面波谐振装置的形成方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015115870A (ja) * | 2013-12-13 | 2015-06-22 | 株式会社村田製作所 | 弾性波デバイス |
CN107733395A (zh) * | 2017-11-14 | 2018-02-23 | 安徽云塔电子科技有限公司 | 一种压电谐振器和压电谐振器的制备方法 |
CN108039872A (zh) * | 2017-12-26 | 2018-05-15 | 海宁市瑞宏科技有限公司 | 一种用于高性能声表面波滤波器的谐振器结构设计 |
CN111510106A (zh) * | 2020-05-06 | 2020-08-07 | 中电科技德清华莹电子有限公司 | 一种声表面波谐振结构滤波器 |
-
2020
- 2020-12-25 CN CN202011567491.XA patent/CN112653415A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015115870A (ja) * | 2013-12-13 | 2015-06-22 | 株式会社村田製作所 | 弾性波デバイス |
CN107733395A (zh) * | 2017-11-14 | 2018-02-23 | 安徽云塔电子科技有限公司 | 一种压电谐振器和压电谐振器的制备方法 |
CN108039872A (zh) * | 2017-12-26 | 2018-05-15 | 海宁市瑞宏科技有限公司 | 一种用于高性能声表面波滤波器的谐振器结构设计 |
CN111510106A (zh) * | 2020-05-06 | 2020-08-07 | 中电科技德清华莹电子有限公司 | 一种声表面波谐振结构滤波器 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113114158A (zh) * | 2021-05-11 | 2021-07-13 | 中国科学院上海微***与信息技术研究所 | 一种兰姆波谐振器及弹性波装置 |
WO2022266789A1 (zh) * | 2021-06-21 | 2022-12-29 | 中国科学技术大学 | 基于高结晶度掺杂压电薄膜的声波谐振器及其制备方法 |
WO2023087211A1 (zh) * | 2021-11-18 | 2023-05-25 | 华为技术有限公司 | 一种saw谐振器及saw滤波器 |
WO2024012311A1 (zh) * | 2022-07-11 | 2024-01-18 | 常州承芯半导体有限公司 | 声表面波谐振装置的形成方法 |
CN116436432A (zh) * | 2023-04-17 | 2023-07-14 | 中国电子科技集团公司第二十六研究所 | 一种小型化的声表面波滤波器结构 |
CN116436432B (zh) * | 2023-04-17 | 2024-07-09 | 中国电子科技集团公司第二十六研究所 | 一种小型化的声表面波滤波器结构 |
CN116915211A (zh) * | 2023-09-12 | 2023-10-20 | 苏州声芯电子科技有限公司 | 一种超宽带零温漂声表面波滤波器 |
CN116915211B (zh) * | 2023-09-12 | 2023-12-19 | 苏州声芯电子科技有限公司 | 一种超宽带零温漂声表面波滤波器 |
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