CN112542419B - 基板处理装置 - Google Patents
基板处理装置 Download PDFInfo
- Publication number
- CN112542419B CN112542419B CN202010848063.8A CN202010848063A CN112542419B CN 112542419 B CN112542419 B CN 112542419B CN 202010848063 A CN202010848063 A CN 202010848063A CN 112542419 B CN112542419 B CN 112542419B
- Authority
- CN
- China
- Prior art keywords
- substrate
- processing apparatus
- substrate processing
- peripheral surface
- rotating member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 112
- 238000012545 processing Methods 0.000 title claims abstract description 76
- 239000007788 liquid Substances 0.000 claims abstract description 83
- 230000007246 mechanism Effects 0.000 claims abstract description 23
- 238000007789 sealing Methods 0.000 claims abstract description 18
- 230000002093 peripheral effect Effects 0.000 claims description 49
- 238000004140 cleaning Methods 0.000 claims description 40
- 238000005260 corrosion Methods 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 10
- 239000007789 gas Substances 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004693 Polybenzimidazole Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920002480 polybenzimidazole Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 229920006129 ethylene fluorinated ethylene propylene Polymers 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/041—Cleaning travelling work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
- B08B5/023—Cleaning travelling work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Polarising Elements (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
本发明提供一种用处理液处理基板的基板处理装置,所述装置包括:形成多个贯通口的旋转构件;以非密封结构安装于多个所述贯通口,用于将基板分离并支撑该基板的多根支撑销;对基板供给处理液的供给喷嘴;在所述旋转构件的下方分离地配置的罩;驱动所述旋转构件在水平面内旋转的旋转驱动机构;驱动多根所述支撑销的驱动机构。
Description
技术领域
本发明涉及一种用处理液对半导体晶片、液晶显示器及有机EL(Electroluminescence:场致发光)显示装置用基板、光掩模用玻璃基板、光盘用基板、磁盘用基板、陶瓷基板、太阳能电池用基板等基板(以下,仅称作基板)进行处理的基板处理装置。
背景技术
以往,作为这种基板处理装置,存在具有承载台、多根支撑销、供给喷嘴的装置。例如,参见日本特开2019-46985号公报(图6)。承载台可旋转地支撑基板。多根支撑销立起设置在承载台的上表面的外周侧。多根支撑销支撑基板的外周缘。供给喷嘴向承载台所支撑的基板供给处理液。
多根支撑销***形成于承载台的贯通口。多根支撑销具有升降销。升降销在交接位置和保持位置之间进行升降,所述交接位置是离开承载台的上表面的位置,所述保持位置是比交接位置更靠近承载台的上表面的位置。在保持基板的状态下,从供给喷嘴向承载台供给处理液。向下流至承载台的处理液沿着支撑销与贯通口的间隙浸入承载台内部。于是,使支撑销升降的驱动部件可能会被处理液损坏。因此,在承载台的***了支撑销的贯通口中安装O型环等密封构件。
但是,在具有这样的结构的现有实例中存在下述问题。
即,在现有装置中,密封构件导致支撑销的滑动阻力显著增大。因此,驱动支撑销的驱动部件需要增大其驱动力,也需要增加其数量。另外,需要提高连接多根支撑销并通过驱动部件来升降的连接构件的强度。因此,妨碍基板处理装置的成本降低。
发明内容
本发明鉴于这样的情况而提出,目的在于提供一种通过将支撑销设置为非密封结构从而能够降低成本的基板处理装置。
本发明为了达到这样的目的而采用下述结构。
本发明是一种用处理液处理基板的基板处理装置,所述装置包括:旋转构件,对所述处理液具有抗腐蚀性,具有大于基板的直径的直径,在外周侧形成多个连通上表面和下表面的贯通口;多根支撑销,对所述处理液具有抗腐蚀性,以非密封结构安装于多个所述贯通口,用于将基板的下表面从所述旋转构件的上表面分离并支撑;供给喷嘴,向在所述旋转构件的上表面由多根所述支撑销支撑的基板供给处理液;罩,对所述处理液具有抗腐蚀性,从所述旋转构件的下表面向下方分离地配置;旋转驱动机构,配置在所述罩内,驱动所述旋转构件在水平面内旋转;驱动机构,配置在所述罩内,驱动多根所述支撑销。
根据本发明,安装在旋转构件的贯通口的多根支撑销以非密封结构安装。因此,供给喷嘴所供给的处理液通过旋转构件的贯通口与多根支撑销之间的间隙浸入旋转构件的下表面。但是,罩以上均对处理液具有抗腐蚀性,旋转驱动机构和驱动机构被罩覆盖,不受处理液的不良影响。另外,由于非密封结构,能够减小滑动阻力并降低驱动负荷。因此,无需驱动机构增大驱动力或提高用于驱动的构件的刚性,能够降低基板处理装置的成本。
另外,本发明优选:将多根所述支撑销中的一部分多根支撑销为升降销,所述基板处理装置具有在所述旋转构件的下方连接多根所述升降销的连接构件,所述驱动机经由所述连接构件驱动多根所述升降销在交接位置和支撑位置之间升降,所述交接位置是用于交接基板的位置,所述支撑位置是低于所述交接位置的位置。
驱动机构经由连接构件使升降销升降。但由于非密封结构而驱动负荷较小,因此,相比现有构件能够降低连接构件的刚性。
另外,本发明优选:所述驱动机构具有被驱动从而进退的动作轴,当所述升降销移动至所述交接位置时,所述动作轴的上端与所述连接构件相抵接,当所述升降销移动至所述支撑位置时,所述动作轴的上端与所述连接构件分离;所述基板处理装置具有磁铁,当所述连接构件将所述升降销从所述交接位置移动至所述支撑位置时,所述磁铁通过磁力向下方吸引所述连接构件。
当移动至交接位置时,连接构件托起动作轴,另一方面,当移动至支撑位置时,动作轴与连接构件分离。由此,多根支撑销和连接构件依靠自重下降。此时,连接机构被磁铁向下方吸引。为此,能够从交接位置向支撑位置快速移动。
另外,本发明优选:所述旋转构件具有下表面开放的周面构件,所述周面构件从所述旋转构件的外周面向下方延伸,具有从所述罩的上表面向上方分离的下端部。
能够防止通过旋转构件的贯通口浸入旋转构件下方的处理液向侧方飞溅。另外,因为下表面开放,所以,能够容易维护旋转构件。
另外,本发明优选具有清洗喷嘴,所述清洗喷嘴向所述周面构件的内部供给清洗液。
从清洗喷嘴供给清洗液,并去除向旋转构件的下方浸入的处理液。由此,能够对由旋转构件的下表面和周面构件的内部所构成的空间进行净化。
另外,本发明优选:还具有:气体供给机构,向所述旋转构件与由多根所述支撑销支撑的基板的下表面之间供给气体,对由多根所述支撑销所支撑的基板产生朝向所述旋转构件侧的吸引力。
通过气体供给机构供给气体,能够作为伯努利式卡盘工作。因此,能够在多根支撑销产生的保持力的基础上,还通过朝向旋转构件侧的吸引力,来可靠地保持基板。
附图说明
为了说明本发明,在附图中示出了目前优选的几种形式,但是应当理解,本发明不限于所示的具体布置和手段。
图1是表示实施例的基板处理装置的概略结构的整体结构图。
图2是表示保持单元的一部分的纵向剖视图。
图3是表示保持单元的一部分并表示支撑销位于交接位置的状态的纵向剖视图。
图4是表示保持单元的一部分并表示支撑销位于支撑位置并旋转的状态的纵向剖视图。
图5是表示对保持单元内部进行清洗的状态的图。
具体实施方式
下面,参考附图对本发明的一个实施例进行说明。
图1是表示实施例的基板处理装置的概略结构的整体结构图。图2是表示保持单元的一部分的纵向剖视图。
实施例的基板处理装置例如以水平姿势保持基板W并用处理液进行处理。该基板处理装置具有保持单元1、罩3、飞溅防止杯5、处理液供给***7、下方供给***9、清洗液供给***11。
保持单元1所保持的处理对象即基板W例如俯视时呈圆形。保持单元1具有旋转构件13、多根(例如,六根)支撑销15、周面构件17、连接构件19、引导销21、上部磁铁23、磁铁保持构件25、下部磁铁27、旋转轴29。
旋转构件13呈直径大于基板W的直径的圆形。具体而言,优选旋转构件13的直径是基板W的直径的1.05倍至1.2倍左右。这是因为,旋转构件13被电动马达45驱动而旋转,旋转构件13的周围被飞溅防止杯5围绕,因此,若旋转构件13过大,则需要设置驱动力大的电动马达45并需要设置大型飞溅防止杯5,所以,装置的成本升高。旋转构件13在其外周侧形成连通上表面和下表面的贯通口31。贯通口31形成在旋转构件13的多个位置(例如,六个位置)上。贯通口31中不安装O型环等密封构件。也就是说,贯通口31以非密封结构***有支撑销15。该支撑销15由对处理液具有抗腐蚀性的树脂材料构成。作为树脂材料,例如可以举出作为氟类树脂的PTFE(聚四氟乙烯)、PFA(四氟乙烯-全氟烷基乙烯基醚共聚物)、PCTFE(聚三氟氯乙烯)等。即便该树脂材料不是氟类树脂,只要对后述处理液供给***7所供给的处理液具有抗腐蚀性即可。各个支撑销15呈圆柱形,所述圆柱形具有大于旋转构件13的厚度的长轴。各个支撑销15的上表面具有用于限制基板W朝向水平方向的移动的凸起15a。各个支撑销15的外径比贯通口31的内径小少许。
各个支撑销15的下端部连接于连接构件19。连接构件19俯视时呈环状,连接构件19的在俯视时不存在支撑销15的部分位置上***有多根引导销21。多根引导销21的上部安装于旋转构件13的下表面,多根引导销21的下部形成凸缘21a。因此,连接构件19的下降位置被引导销21的凸缘21a所限制。连接构件19及多根引导销21由上述氟树脂对不锈钢等金属材料进行模制。由此,连接构件19及多根引导销21具有耐药品性。另外,旋转构件13由不锈钢等金属材料构成。旋转构件13的下表面及内周面被上述氟树脂等涂覆。由此,旋转构件13具有耐药品性。
连接构件19的部分下表面上安装有上部磁铁23。在连接构件19的下方,与上部磁铁23分离地安装有磁铁保持构件25。该磁铁保持构件25的高度位置固定。在磁铁保持构件25的与上部磁铁23相对的上表面上安装有下部磁铁27。以相互吸引的极性相对的方式安装上部磁铁23与下部磁铁27。也就是说,如果上部磁铁23的下表面为S极,则以下部磁铁27的上表面为N极的方式安装下部磁铁27。上部磁铁23、下部磁铁27、磁铁保持构件25由上述氟树脂模制。由此,上部磁铁23、下部磁铁27、磁铁保持构件25具有耐药品性。
多根支撑销15经由连接构件19而升降,但多根支撑销15以非密封结构安装于旋转构件13,所以,经由连接构件19的多根支撑销15的驱动负荷变小。因此,相比现有技术,能够设置较低刚性的连接构件19。
旋转轴29的末端部安装于旋转构件13。旋转轴29为双层筒结构。旋转轴29的内筒***外筒33。外筒33的内周面与内筒35的外周面相分离。因此,旋转轴29内形成第一流路37和第二流路39。第一流路37设置于内筒35的中心。第二流路39由内筒35的外周面和外筒33的内周面构成。在旋转轴29的上部且旋转构件13的旋转中心上安装开口盖41。在开口盖41的中心部形成喷出口41a。开口盖41的下部形成向下凸出的三角形。与该部分相对的内筒35形成上表面向下凹陷的三角形。该三角形的形状与开口盖41的三角形相对应。这些三角形的部分相互分离,形成迷宫式结构41b。旋转轴29是在不锈钢合金等金属材料上涂覆上述氟树脂而形成的。由此,旋转轴29具有耐药品性。
在旋转构件13的内部形成流路43。流路43的一端侧与第二流路39相连通。流路43的另一端侧与旋转构件13的周边侧的上表面相连通。周边侧的开口是边缘开口43a。边缘开口43a以斜向上的姿势形成。由此,边缘开口43a向处于支撑位置的高度的支撑销15的上端部吹出气体。
此外,上述喷出口41a与边缘开口43a相当于本发明的“气体供给机构”。
旋转构件13具有周面构件17。周面构件17俯视时呈环状。周面构件17从旋转构件13的外周面侧向下方延伸。周面构件17的下端部从罩3的上表面向上方分离。从下方观察时,周面构件17的下表面具有大致圆形的开口。周面构件17防止经由旋转构件13的贯通口31而浸入旋转构件13的下方的处理液向侧方的飞溅。另外,周面构件17的下表面开放。因此,能够容易地对保持单元1的内部进行维护。
罩3配置在上表面从周面构件17的下端部向下方分离的位置上。罩3的至少上表面例如由上述那样的氟树脂构成。因此,罩3对后述处理液供给***7所供给的处理液具有抗腐蚀性。在罩3的内部内置有电动马达45和升降驱动部47。罩3内的中央部隔着密封构件49***有旋转轴29。旋转轴29以从电动马达45的下端部向下方凸出的状态与电动马达45相连接。若电动马达45工作,则旋转轴29以轴芯P为旋转中心进行旋转。在罩3的上表面的外周侧上配置升降驱动部47。升降驱动部47例如由气缸等驱动器构成。升降驱动部47具有动作轴51。动作轴51的长轴朝向铅垂方向。动作轴51隔着密封构件53***罩3。若升降驱动部47工作,则动作轴51以其上端离开升降驱动部47的方式伸长。若升降驱动部47未工作,则动作轴51以其上端接近升降驱动部47的方式收缩。在升降驱动部47处于未工作状态时,动作轴51的上端与连接构件19的下表面少许分离。在升降驱动部47处于未工作状态时,允许连接构件19下降,并允许支撑销15下降至支撑位置。另外,当升降驱动部47处于工作状态时,动作轴51的上端与连接构件19的下表面相抵接并托起连接构件19。由此,动作轴51将支撑销15托起至交接位置。
上述动作轴51例如由不锈钢构成。动作轴51由上述氟树脂、PBI(聚苯并咪唑)及EFEP(四氟乙烯与乙烯的共聚物)等涂覆。由此,动作轴51具有耐药品性。另外,可以用PEEK(聚醚醚酮)构成动作轴51。在此情况下,动作轴51由上述氟树脂等涂覆。
在从罩3的上表面向下方倾斜的侧面上配置有清洗喷嘴55。清洗喷嘴55的长轴朝向周面构件17的开口部。罩3和保持单元1的侧方配置有飞溅防止杯5。飞溅防止杯5回收从保持单元1向周围飞溅的处理液。另外,飞溅防止杯5回收浸入保持单元1内部的处理液。进而,飞溅防止杯5回收从清洗喷嘴55供给至保持单元1并飞溅的清洗液。
处理液供给***7具有供给喷嘴57、处理液供给部59、配管61、控制阀63。在保持单元1的上方且轴芯P的轴线上配置有供给喷嘴57。该供给喷嘴57构成为能够在未图示的待机位置与图1所示的供给位置之间移动。处理液供给部59贮存用于清洗基板W的清洗液。清洗液例如是纯水、SC1(氨水与过氧化氢的混合液)、SC2(盐酸、过氧化氢、纯水的混合液)、DHF(稀释的氢氟酸)等。供给喷嘴57与处理液供给部59通过配管61连通连接。在配管61上安装有控制阀63。控制阀63调节其流量,并允许或切断设定流量的供给。
下方供给***9的结构如下。配管65的一端侧与旋转轴29的第一流路37连通连接。配管65的另一端侧与处理液供给部67连通连接。配管65具有控制阀69。控制阀69调整处理液的流量,并控制处理液的供给/切断。处理液供给部67例如能够供给与上述处理液供给部59同样的处理液。另外,配管71的一端侧与旋转轴29的第二流路39连通连接。配管71的另一端侧与气体供给部73连通连接。配管71具有控制阀69。控制阀69调整气体的流量,并控制气体的供给/切断。气体供给部73供给气体。气体优选非活性气体,例如,优选氮气。控制阀69、75会同时打开。在该情况下,从喷出口41a向基板W的下表面同时供给处理液和气体。另外,在该情况下,从边缘开口43a向基板W的周缘下表面仅供给气体。
另外,旋转轴29采用迷宫式结构41b。因此,从喷出口41a供给处理液后,处理液不进入第二流路39。因此,即便在从喷出口41a仅供给气体的情况下,先供给的处理液也不会从喷出口41a供给至基板W。其结果,能够供给恰当的流体。
配管77的一端侧与清洗液供给***11的清洗喷嘴55连通连接。清洗液供给部79与配管77的另一端侧连通连接。配管77上安装有控制阀81。控制阀81调整清洗液的流量,并控制清洗液的供给/切断。清洗液供给部79例如供给纯水等作为清洗液。
在基板处理装置的底部,例如设置有与无尘室等所具有的排液部连通连接的排液管83。该排液管83将由处理液供给***7、下方供给***9、清洗液供给***11供给的处理液排出。
下面,参考图3和图4。图3是表示保持单元的一部分并表示支撑销位于交接位置的状态的纵向剖视图。图4是表示保持单元的一部分并表示支撑销位于支撑位置并旋转的状态的纵向剖视图。
从未图示的搬运机构接收作为处理对象的基板W时,使升降驱动部47工作。由此,如图3所示,动作轴51上升,托起连接构件19,使支撑销15上升至交接位置。因为支撑销15没有现有技术中那样的O型环等密封构件,所以,相比现有技术,其上升时的滑动阻力极小。因此,使支撑销15上升时的驱动负荷仅是使支撑销15和连接构件19等上升的力、用于解除磁铁23与27的磁力所产生的吸引力的力。但是,这与现有技术中那样具有O型环等密封构件的结构相比驱动负荷极小。这样,在使多根支撑销15上升至交接位置的状态下,将基板W从未图示的搬运机构载置于多根支撑销15上。此时,基板W的端缘通过凸起15a限制水平方向的位置。
接着,不使升降驱动部47工作。由此,动作轴51收缩至升降驱动部47侧。于是,如图4所示,托起连接构件19的下表面的动作轴51的上端从连接构件19的下表面向下方分离。因此,多根支撑销15与连接构件19和磁铁23等一起依靠自重开始向下方移动。并且,多根支撑销15因上部磁铁23和下部磁铁27的磁力所产生的吸引而快速下降。该下降在连接构件19到达引导销21的凸缘21a时停止。由此,多根支撑销15的一部分进入旋转构件13的上表面,并且,基板W的下表面向接近旋转构件13的上表面的支撑位置移动。因为通过上部磁铁23和下部磁铁27将连接构件19向下方吸引,所以,支撑销15能够从交接位置向支撑位置快速移动。
此外,在该时间点,可以执行定心操作,所述定心操作是通过旋转构件13所具有的中心销(未图示)使基板W的中心与旋转构件13的旋转中心一致的动作。其中,为了容易理解发明,设定基板W的中心与旋转构件13的中心大致一致地载置。
若基板W移动至支撑位置,则打开控制阀75。于是,如图4中白色三角箭头所示,从喷出口41a和边缘开口43a喷出氮气。从喷出口41a喷出的氮气在基板W的下表面朝向侧方地改变方向。并且,该氮气在旋转台13的上表面与基板W的下表面之间的狭小空间快速朝向基板W的外周方向流动。进而,从边缘开口43a喷出的氮气在基板W的外周缘下表面朝向侧方地改变方向。并且,该氮气快速流出旋转台13与基板W的外周缘下表面之间的狭小空间。该氮气的气流产生伯努利效果,使基板W的下表面产生负压。通过该负压,对于基板W,产生朝向旋转构件13的上表面侧的吸引力,基板W被吸引向旋转构件13侧。由此,能够通过保持单元1稳定地保持基板W。
在基板W被吸引至旋转构件13侧后,使电动马达45工作,以清洗转速使旋转轴29开始旋转。在基板W的转速达到清洗转速后,使供给喷嘴57向轴芯P的上方移动。并且,打开控制阀63。于是,从供给喷嘴57向基板W的上表面供给处理液,处理液通过离心力在基板W的上表面向外周面流出。由此,由处理液清洗基板W的上表面。若经过规定的处理时间,则关闭控制阀63并停止从供给喷嘴57供给处理液。并且,提高电动马达45的转速至比清洗转速高的干燥转速。由此,使附着于基板W或旋转台13等的处理液向周围飞溅,进行基板W的干燥处理。通过飞溅防止杯5回收向周围飞溅的处理液。在规定时间的干燥处理之后,使电动马达45停止。
若干燥处理结束,则关闭控制阀75,并停止供给氮气。由此,解除在基板W的下表面产生的负压。接着,若使驱动机构47工作,则如图3所示,动作轴51上升,托起连接构件19并使支撑销15上升至交接位置。然后,通过未图示的搬运机构,从多根支撑销15移送清洗处理完毕的基板W。
另外,在重复实施上述清洗处理的过程中,处理液从支撑销15与贯通口31之间的间隙流下。从旋转构件13或周面构件17向下方流下的处理液经由位于基板处理装置的下部的排液管8排出至排液部。未从排液管83排出的处理液附着于由旋转构件13和周面构件17围起的空间中的结构部件上。因此,定期地使电动马达45旋转,并如图5所示,打开控制阀81,从清洗喷嘴55供给清洗液。由此,向由旋转构件13和周面构件17围起的空间中的结构部件吹送清洗液,处理液也从罩3的上表面流下。由此,能够去除附着于由旋转构件13和周面构件17围起的空间中的结构部件、罩3的上表面的处理液。因此,能够对所附着的处理液固定并干燥后剥落而形成颗粒,从而污染基板W的情况防范于未然。
根据本实施例,于旋转构件13的贯通口31安装的多根支撑销15以非密封结构安装。因此,从供给喷嘴57供给的处理液通过旋转构件13的贯通口31与多根支撑销15之间的间隙而浸入旋转构件13的下表面。但是,电动马达45与升降驱动部47被罩3覆盖,不受处理液的不良影响。另外,因为采用非密封结构,能够减小滑动阻力并降低驱动负荷。因此,无需增大升降驱动部47的驱动力或提高用于驱动的构件的刚性等,能够降低基板处理装置的成本。
本发明并不限于上述实施方式,能够如下般进行变形。
(1)在上述实施例中,处理对象仅为基板W,但是,例如也适用于对残留最外周的边缘部分(数毫米)、仅磨削并薄化其内周的基板W(也称作TAIKO基板)或对整个表面薄化了的基板W进行处理的基板处理装置。
(2)在上述实施例中,以旋转构件13仅具有支撑销15的基板处理装置为例进行了说明。但是,本发明例如还可以适用于在上述各个支撑销15之间具有定心销的基板处理装置。具体而言,能够举出具有定心机构的基板处理装置。定心机构使定心销转动。在基板W被各个支撑销15支撑并向支撑位置移动的状态下,定心机构使定心销转动。于是,基板W的旋转中心与旋转构件13的旋转中心一致。定心销围绕铅垂轴可转动地安装于旋转构件13,具有位于从铅垂轴偏移的位置的对位凸起。此外,在该情况下,在定心销的下端部,以水平方向上磁极不同的方式安装有磁铁。进而,在罩3的内部配置用于切换磁铁的极性的定心销驱动部。然后,若使定心销驱动部工作,则经由罩3的上表面切换磁极所产生的磁力会对定心销的下端部的磁铁产生影响。其结果,定心销围绕铅垂轴转动。关于这样的定心销,优选采用被上述氟树脂涂覆,并以非密封结构可转动的结构。
(3)在上述实施例中,用连接构件19一并升降驱动多根支撑销15。但本发明并不限于这样的结构。例如可以采用将六根支撑销15分为两组,对每三根支撑销15一并进行升降驱动的结构。
(4)在上述实施例中,采用了动作轴51未与连接构件19连接的结构。但本发明并不限于这样的结构。例如,可以采用动作轴51的上端与连接构件19的下表面连接的结构。在该情况下,因为能够省略上部磁铁23、下部磁铁27、磁铁保持构件25,所以能够降低成本。
(5)在上述实施例中,罩3具有清洗喷嘴55。但本发明并不必须此结构。另外,也可以是罩3本身不具有清洗喷嘴55,而将清洗喷嘴55配置于能够向周面构件17的内部供给清洗液的位置。例如,可以在罩3的外部且飞溅防止杯5的内部的位置上配置清洗喷嘴55。
(6)在上述实施例中,通过在支撑销15所支撑的基板W的下表面与旋转构件13的表面之间快速喷出气体而产生负压,对基板W产生向旋转构件13侧的吸引力。但本发明并不限于这样的伯努利式盘。也就是说,也适用于具有仅用支撑销15抵接支撑基板W的外周缘下表面的保持单元的基板处理装置。
在不脱离本发明的精神或实质的情况下,本发明可以以其他具体形式来体现,因此,应指出所附权利要求书,而不是前述说明书,以指示本发明的范围。
Claims (10)
1.一种基板处理装置,用处理液对基板进行处理,其中,包括:
旋转构件,对所述处理液具有抗腐蚀性,具有大于基板的直径的直径,在外周侧形成有多个连通上表面和下表面的贯通口;
多根支撑销,对所述处理液具有抗腐蚀性,以非密封结构安装于多个所述贯通口,用于将基板的下表面从所述旋转构件的上表面分离并支撑;
供给喷嘴,向在所述旋转构件的上表面由多根所述支撑销支撑的基板供给处理液;
罩,对所述处理液具有抗腐蚀性,从所述旋转构件的下表面向下方分离地配置;
旋转驱动机构,配置在所述罩内,驱动所述旋转构件在水平面内旋转;
驱动机构,配置在所述罩内,驱动多根所述支撑销。
2.根据权利要求1所述的基板处理装置,其中,
多根所述支撑销中的一部分多根支撑销为升降销,
所述基板处理装置具有在所述旋转构件的下方连接多根所述升降销的连接构件,
所述驱动机构经由所述连接构件驱动多根所述升降销在交接位置和支撑位置之间升降,所述交接位置是用于交接基板的位置,所述支撑位置是低于所述交接位置的位置。
3.根据权利要求2所述的基板处理装置,其中,
所述驱动机构具有被驱动而进退的动作轴,当所述升降销移动至所述交接位置时,所述动作轴的上端与所述连接构件相抵接,当所述升降销移动至所述支撑位置时,所述动作轴的上端与所述连接构件分离,
所述基板处理装置具有磁铁,当所述升降销从所述交接位置向所述支撑位置移动时,所述磁铁通过磁力向下方吸引所述连接构件。
4.根据权利要求1所述的基板处理装置,其中,
所述旋转构件具有下表面开放的周面构件,所述周面构件从所述旋转构件的外周面向下方延伸,具有从所述罩的上表面向上方分离的下端部。
5.根据权利要求2所述的基板处理装置,其中,
所述旋转构件具有下表面开放的周面构件,所述周面构件从所述旋转构件的外周面向下方延伸,具有从所述罩的上表面向上方分离的下端部。
6.根据权利要求3所述的基板处理装置,其中,
所述旋转构件下表面开放的周面构件,所述周面构件从所述旋转构件的外周面向下方延伸,具有从所述罩的上表面向上方分离的下端部。
7.根据权利要求4所述的基板处理装置,其中,
具有清洗喷嘴,所述清洗喷嘴向所述周面构件的内部供给清洗液。
8.根据权利要求5所述的基板处理装置,其中,
具有清洗喷嘴,所述清洗喷嘴向所述周面构件的内部供给清洗液。
9.根据权利要求6所述的基板处理装置,其中,
具有清洗喷嘴,所述清洗喷嘴向所述周面构件的内部供给清洗液。
10.根据权利要求1至9中任一项所述的基板处理装置,其中,
还具有气体供给机构,所述气体供给机构向所述旋转构件与由多根所述支撑销支撑的基板的下表面之间供给气体,对由多根所述支撑销支撑的基板产生朝向所述旋转构件侧的吸引力。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019171517A JP7370201B2 (ja) | 2019-09-20 | 2019-09-20 | 基板処理装置 |
JP2019-171517 | 2019-09-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112542419A CN112542419A (zh) | 2021-03-23 |
CN112542419B true CN112542419B (zh) | 2024-03-22 |
Family
ID=74876632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010848063.8A Active CN112542419B (zh) | 2019-09-20 | 2020-08-21 | 基板处理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20210086236A1 (zh) |
JP (1) | JP7370201B2 (zh) |
KR (1) | KR102425864B1 (zh) |
CN (1) | CN112542419B (zh) |
TW (1) | TWI750776B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6979935B2 (ja) * | 2018-10-24 | 2021-12-15 | 三菱電機株式会社 | 半導体製造装置および半導体製造方法 |
KR20210157574A (ko) * | 2020-06-22 | 2021-12-29 | 주식회사 제우스 | 기판처리장치 |
JP2023045549A (ja) * | 2021-09-22 | 2023-04-03 | 株式会社Screenホールディングス | 基板処理装置 |
CN118080074B (zh) * | 2024-04-18 | 2024-06-28 | 哈尔滨学院 | 一种食品研磨机 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263324A (ja) * | 1994-03-17 | 1995-10-13 | Dainippon Screen Mfg Co Ltd | 吸引チャック式基板回転処理装置 |
US6306455B1 (en) * | 1997-08-27 | 2001-10-23 | Tokyo Electron Limited | Substrate processing method |
JP2001308162A (ja) * | 2000-04-27 | 2001-11-02 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2002313892A (ja) * | 2001-04-17 | 2002-10-25 | Dainippon Screen Mfg Co Ltd | 回転部材および基板処理装置 |
JP2005019701A (ja) * | 2003-06-26 | 2005-01-20 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2005135940A (ja) * | 2003-10-28 | 2005-05-26 | Okamoto Machine Tool Works Ltd | 半導体ウエハのユニバ−サルチャック機構およびウエハ取付板 |
JP2005260088A (ja) * | 2004-03-12 | 2005-09-22 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
CN1674247A (zh) * | 2004-03-24 | 2005-09-28 | 京瓷株式会社 | 晶片等支撑部件 |
JP2013105867A (ja) * | 2011-11-14 | 2013-05-30 | Tokyo Electron Ltd | 基板保持体、基板保持体の再生方法及び基板保持体の製造方法 |
TW201705250A (zh) * | 2015-02-16 | 2017-02-01 | 思可林集團股份有限公司 | 基板處理裝置 |
JP2018067683A (ja) * | 2016-10-21 | 2018-04-26 | 株式会社プレテック | ウェーハ保持装置及びウェーハ処理装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3621568B2 (ja) * | 1997-09-26 | 2005-02-16 | 大日本スクリーン製造株式会社 | 基板洗浄装置 |
JP3816734B2 (ja) * | 2000-09-13 | 2006-08-30 | 東京エレクトロン株式会社 | 基板洗浄装置 |
US7055229B2 (en) * | 2003-12-31 | 2006-06-06 | Intel Corporation | Support system for semiconductor wafers and methods thereof |
JP2005317749A (ja) * | 2004-04-28 | 2005-11-10 | Sumitomo Electric Ind Ltd | 半導体製造装置用保持体及びそれを搭載した半導体製造装置 |
JP2008130948A (ja) * | 2006-11-24 | 2008-06-05 | Dainippon Screen Mfg Co Ltd | 基板保持装置およびそれを備える基板処理装置 |
EP2051285B1 (en) * | 2007-10-17 | 2011-08-24 | Ebara Corporation | Substrate cleaning apparatus |
JP5242242B2 (ja) * | 2007-10-17 | 2013-07-24 | 株式会社荏原製作所 | 基板洗浄装置 |
WO2010032750A1 (ja) * | 2008-09-16 | 2010-03-25 | 東京エレクトロン株式会社 | 基板処理装置および基板載置台 |
JP5090299B2 (ja) * | 2008-09-16 | 2012-12-05 | 東京エレクトロン株式会社 | プラズマ処理装置および基板載置台 |
JP2010080583A (ja) * | 2008-09-25 | 2010-04-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP5646528B2 (ja) * | 2012-03-09 | 2014-12-24 | 東京エレクトロン株式会社 | 液処理装置 |
CN104538345B (zh) * | 2014-12-31 | 2017-06-06 | 北京七星华创电子股份有限公司 | 一种盘状物夹持旋转装置 |
JP6352827B2 (ja) * | 2015-02-12 | 2018-07-04 | 株式会社テックインテック | 基板処理装置 |
JP6770886B2 (ja) * | 2016-12-28 | 2020-10-21 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
JP6804325B2 (ja) * | 2017-02-09 | 2020-12-23 | 東京エレクトロン株式会社 | 液処理装置 |
JP6948889B2 (ja) * | 2017-09-04 | 2021-10-13 | 株式会社Screenホールディングス | 基板保持装置 |
JP7179466B2 (ja) * | 2018-02-13 | 2022-11-29 | 株式会社Screenホールディングス | 基板処理装置 |
-
2019
- 2019-09-20 JP JP2019171517A patent/JP7370201B2/ja active Active
-
2020
- 2020-08-21 TW TW109128498A patent/TWI750776B/zh active
- 2020-08-21 CN CN202010848063.8A patent/CN112542419B/zh active Active
- 2020-09-01 KR KR1020200110974A patent/KR102425864B1/ko active IP Right Grant
- 2020-09-10 US US17/016,438 patent/US20210086236A1/en active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263324A (ja) * | 1994-03-17 | 1995-10-13 | Dainippon Screen Mfg Co Ltd | 吸引チャック式基板回転処理装置 |
US6306455B1 (en) * | 1997-08-27 | 2001-10-23 | Tokyo Electron Limited | Substrate processing method |
JP2001308162A (ja) * | 2000-04-27 | 2001-11-02 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2002313892A (ja) * | 2001-04-17 | 2002-10-25 | Dainippon Screen Mfg Co Ltd | 回転部材および基板処理装置 |
JP2005019701A (ja) * | 2003-06-26 | 2005-01-20 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2005135940A (ja) * | 2003-10-28 | 2005-05-26 | Okamoto Machine Tool Works Ltd | 半導体ウエハのユニバ−サルチャック機構およびウエハ取付板 |
JP2005260088A (ja) * | 2004-03-12 | 2005-09-22 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
CN1674247A (zh) * | 2004-03-24 | 2005-09-28 | 京瓷株式会社 | 晶片等支撑部件 |
JP2013105867A (ja) * | 2011-11-14 | 2013-05-30 | Tokyo Electron Ltd | 基板保持体、基板保持体の再生方法及び基板保持体の製造方法 |
TW201705250A (zh) * | 2015-02-16 | 2017-02-01 | 思可林集團股份有限公司 | 基板處理裝置 |
JP2018067683A (ja) * | 2016-10-21 | 2018-04-26 | 株式会社プレテック | ウェーハ保持装置及びウェーハ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
CN112542419A (zh) | 2021-03-23 |
US20210086236A1 (en) | 2021-03-25 |
KR102425864B1 (ko) | 2022-07-27 |
JP7370201B2 (ja) | 2023-10-27 |
TWI750776B (zh) | 2021-12-21 |
KR20210034491A (ko) | 2021-03-30 |
JP2021048363A (ja) | 2021-03-25 |
TW202116126A (zh) | 2021-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN112542419B (zh) | 基板处理装置 | |
KR101426999B1 (ko) | 기판 유지 회전 장치 및 이것을 구비한 기판 처리 장치, 및 기판 처리 방법 | |
US11031235B2 (en) | Substrate processing apparatus | |
JP6143572B2 (ja) | 基板保持回転装置およびそれを備えた基板処理装置、ならびに基板処理方法 | |
KR102389767B1 (ko) | 기판 처리 장치 | |
US8104488B2 (en) | Single side workpiece processing | |
KR101280768B1 (ko) | 기판처리장치 및 기판처리방법 | |
US20070110895A1 (en) | Single side workpiece processing | |
CN108573859B (zh) | 基板处理方法以及基板处理装置 | |
JP5208666B2 (ja) | 基板処理装置 | |
JP4467379B2 (ja) | 基板処理装置 | |
JP2012199408A (ja) | 基板処理装置 | |
US8082932B2 (en) | Single side workpiece processing | |
US8444772B2 (en) | Liquid processing apparatus | |
US7849865B2 (en) | System for processing a workpiece | |
JP2014036168A (ja) | 基板処理装置 | |
JP6190678B2 (ja) | 基板保持機構およびそれを用いた基板処理装置 | |
JP2009147146A (ja) | 基板処理装置および基板処理方法 | |
JP2017069264A (ja) | 基板保持装置 | |
JP2014049565A (ja) | 基板処理装置および基板処理方法 | |
JP2018142593A (ja) | 基板処理装置及び基板処理方法 | |
CN115863206A (zh) | 基板处理装置 | |
JP4926932B2 (ja) | 基板処理装置および基板処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |