JP6804325B2 - 液処理装置 - Google Patents
液処理装置 Download PDFInfo
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- JP6804325B2 JP6804325B2 JP2017022350A JP2017022350A JP6804325B2 JP 6804325 B2 JP6804325 B2 JP 6804325B2 JP 2017022350 A JP2017022350 A JP 2017022350A JP 2017022350 A JP2017022350 A JP 2017022350A JP 6804325 B2 JP6804325 B2 JP 6804325B2
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- 239000007788 liquid Substances 0.000 title claims description 200
- 239000000758 substrate Substances 0.000 claims description 80
- 238000012545 processing Methods 0.000 claims description 79
- 230000002093 peripheral effect Effects 0.000 claims description 24
- 238000003780 insertion Methods 0.000 claims description 19
- 230000037431 insertion Effects 0.000 claims description 19
- 230000003014 reinforcing effect Effects 0.000 claims description 16
- 238000007599 discharging Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 description 17
- 230000003028 elevating effect Effects 0.000 description 14
- 238000012546 transfer Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 12
- 239000012530 fluid Substances 0.000 description 11
- 239000000126 substance Substances 0.000 description 9
- 238000001035 drying Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000001174 ascending effect Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 2
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 polychlorotrifluoroethylene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
16 処理ユニット
18 制御部
30 基板保持機構
31 保持部
32 支柱部
33 駆動部
73 N2供給源(気体供給部)
80 下面処理部
81 軸部
81b 第2流路(排出路)
82 ノズル
91 第2配管(排出路)
310 保持プレート
311 基板保持部
312 リフトプレート(板部)
313 リフトピン
820 基部
820a 液吐出流路(排出路)
820c 凹部
820e 傾斜部
821 液供給部
822 ノズル基部(第1供給部)
822a 第1液供給路(液供給流路)
822b 圧入孔
823 ノズルキャップ(第2供給部)
823a 第2液供給路(液供給流路)
823b ネジ取付部(取付部)
823c テーパ部
823d 供給部
824 補強部材
826 ネジ(固定部)
828 吐出口
828a 第1吐出口
828b 第2吐出口
828c 第3吐出口
Claims (11)
- 基板を水平に保持する基板保持部と、
前記基板保持部を回転させる駆動部と、
前記基板保持部に保持された前記基板の回転軸を含み、前記回転軸の軸方向に沿って延設され、かつ前記基板よりも下方に設けられた軸部と、
前記軸部の上端に取り付けられる基部と、前記基部から前記基板の径方向外側に延設され、前記基板に向けて液を吐出する吐出口が形成された液供給部とを有し、前記基板の下面に向けて液を吐出するノズルと、
挿入孔に挿入された前記軸部によって回転自在に支持されて前記基板保持部とともに回転する支柱部と、
前記基部の下面および前記基板の下面と向かい合い、前記基板保持部と一体に回転する板部と、
前記挿入孔を形成する内周面と前記軸部との間に形成される第1間隙を介して、前記基部の下面と前記板部との間に形成され、前記第1間隙に連通する第2間隙に気体を供給する気体供給部と
を備え、
前記軸部および前記基部は、
前記軸方向に沿って形成され、前記基板の下面に向けて吐出された前記液を排出する排出路を備え、
前記基部は、
前記液が前記排出路に向けて流れるように下方に向けて窪んだ凹部と、
前記凹部の周縁から前記基部の外側となるにつれて下方に傾斜する傾斜部と、
を備え、
前記傾斜部は、
前記基部の下面まで延設される
液処理装置。 - 基板を水平に保持する基板保持部と、
前記基板保持部を回転させる駆動部と、
前記基板保持部に保持された前記基板の回転軸を含み、前記回転軸の軸方向に沿って延設され、かつ前記基板よりも下方に設けられた軸部と、
前記基板の下面に向けて液を吐出するノズルと、
を備え、
前記ノズルは、
前記軸部の上端に取り付けられる基部と、前記基部から前記基板の径方向外側に延設され、前記基板に向けて液を吐出する吐出口が形成された液供給部とを備え、
前記軸部および前記基部は、
前記軸方向に沿って形成され、前記基板の下面に向けて吐出された前記液を排出する排出路を備え、
前記基部は、
前記液が前記排出路に向けて流れるように下方に向けて窪んだ凹部を備え、
前記液供給部は、
前記基板の径方向に沿って形成され、前記吐出口と連通する液供給流路を備え、
前記吐出口は、
前記基部側に形成され、上下方向において前記液供給流路と重なるように形成された1個以上の第1吐出口と、
前記第1吐出口よりも前記径方向外側に複数形成され、前記上下方向において前記液供給流路と重ならないように、前記液供給流路に対して前記基板の回転方向の下流側にオフセットして形成される1個以上の第2吐出口と
を含み、
前記回転軸側の前記液供給部は、
前記凹部内に突出し、
前記第1吐出口は、
前記凹部内の前記液供給部に形成される
液処理装置。 - 前記回転軸に最も近い前記第1吐出口は、
前記回転軸よりも前記径方向外側に形成される
請求項2に記載の液処理装置。 - 前記液供給部は、
前記液供給部の先端側の上部に形成されたテーパ部
をさらに備え、
前記吐出口は、
前記テーパ部に形成された1個以上の第3吐出口を含む、
請求項2または3に記載の液処理装置。 - 前記第3吐出口は、
前記径方向外側に向けて前記液を吐出するように形成される
請求項4に記載の液処理装置。 - 前記液供給部は、
前記基部から前記径方向に沿って延設される第1液供給部と、
前記径方向外側の前記第1液供給部の端部に取り付けられ、前記径方向に沿って延設される第2液供給部とを備える
請求項2〜5のいずれか一つに記載の液処理装置。 - 前記第2液供給部は、
前記液供給流路および前記吐出口が形成される供給部と、
前記径方向外側の前記供給部の先端よりも前記軸部側に設けられ、固定部によって前記第1液供給部に取り付けられる取付部と
を備える
請求項6に記載の液処理装置。 - 前記第1液供給部は、
前記液供給流路に対して平行に形成された孔と、
前記孔に挿入される補強部材と
を備える
請求項6または7に記載の液処理装置。 - 前記補強部材は、
中空状である
請求項8に記載の液処理装置。 - 前記吐出口の合計面積は、
前記液供給部に前記液を供給する流路の断面積よりも小さい
請求項1〜9のいずれか一つに記載の液処理装置。 - 前記ノズルは、
前記基部の上端の高さが、前記液供給部の上端の高さよりも低くなるように形成される
請求項1〜10のいずれか一つに記載の液処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017022350A JP6804325B2 (ja) | 2017-02-09 | 2017-02-09 | 液処理装置 |
US15/881,984 US11322373B2 (en) | 2017-02-09 | 2018-01-29 | Liquid processing apparatus |
TW107103140A TWI748047B (zh) | 2017-02-09 | 2018-01-30 | 液體處理裝置 |
KR1020180012647A KR102468100B1 (ko) | 2017-02-09 | 2018-02-01 | 액처리 장치 |
CN201810132808.3A CN108417510B (zh) | 2017-02-09 | 2018-02-09 | 液体处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017022350A JP6804325B2 (ja) | 2017-02-09 | 2017-02-09 | 液処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018129438A JP2018129438A (ja) | 2018-08-16 |
JP6804325B2 true JP6804325B2 (ja) | 2020-12-23 |
Family
ID=63037373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017022350A Active JP6804325B2 (ja) | 2017-02-09 | 2017-02-09 | 液処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11322373B2 (ja) |
JP (1) | JP6804325B2 (ja) |
KR (1) | KR102468100B1 (ja) |
CN (1) | CN108417510B (ja) |
TW (1) | TWI748047B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7096112B2 (ja) * | 2018-09-13 | 2022-07-05 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
JP7370201B2 (ja) * | 2019-09-20 | 2023-10-27 | 株式会社Screenホールディングス | 基板処理装置 |
Family Cites Families (14)
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---|---|---|---|---|
KR100887360B1 (ko) * | 2001-01-23 | 2009-03-06 | 도쿄엘렉트론가부시키가이샤 | 기판처리장치 및 기판처리방법 |
US20040162007A1 (en) * | 2003-02-19 | 2004-08-19 | Ky Phan | Chemical mechanical polishing atomizing rinse system |
JP2004273715A (ja) * | 2003-03-07 | 2004-09-30 | Hitachi Ltd | 基板洗浄装置 |
KR100706666B1 (ko) * | 2006-05-25 | 2007-04-13 | 세메스 주식회사 | 기판을 처리하는 장치 및 방법, 그리고 이에 사용되는분사헤드 |
TWI378502B (en) | 2006-06-12 | 2012-12-01 | Semes Co Ltd | Method and apparatus for cleaning substrates |
JP4850952B2 (ja) * | 2008-02-14 | 2012-01-11 | 東京エレクトロン株式会社 | 液処理装置、液処理方法および記憶媒体 |
JP5743853B2 (ja) * | 2010-12-28 | 2015-07-01 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP5734705B2 (ja) * | 2011-03-02 | 2015-06-17 | 株式会社Screenホールディングス | 基板処理装置 |
JP5693438B2 (ja) * | 2011-12-16 | 2015-04-01 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
JP6317547B2 (ja) * | 2012-08-28 | 2018-04-25 | 株式会社Screenホールディングス | 基板処理方法 |
JP6158737B2 (ja) * | 2014-03-31 | 2017-07-05 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
US9460944B2 (en) * | 2014-07-02 | 2016-10-04 | SCREEN Holdings Co., Ltd. | Substrate treating apparatus and method of treating substrate |
WO2016052642A1 (ja) * | 2014-09-30 | 2016-04-07 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
JP2016111302A (ja) * | 2014-12-10 | 2016-06-20 | 株式会社Screenホールディングス | 基板処理装置 |
-
2017
- 2017-02-09 JP JP2017022350A patent/JP6804325B2/ja active Active
-
2018
- 2018-01-29 US US15/881,984 patent/US11322373B2/en active Active
- 2018-01-30 TW TW107103140A patent/TWI748047B/zh active
- 2018-02-01 KR KR1020180012647A patent/KR102468100B1/ko active IP Right Grant
- 2018-02-09 CN CN201810132808.3A patent/CN108417510B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN108417510B (zh) | 2023-06-13 |
JP2018129438A (ja) | 2018-08-16 |
KR102468100B1 (ko) | 2022-11-16 |
US11322373B2 (en) | 2022-05-03 |
TWI748047B (zh) | 2021-12-01 |
KR20180092839A (ko) | 2018-08-20 |
CN108417510A (zh) | 2018-08-17 |
US20180226277A1 (en) | 2018-08-09 |
TW201841242A (zh) | 2018-11-16 |
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