CN112433446A - Photomask inspection apparatus and photomask cleaning method - Google Patents

Photomask inspection apparatus and photomask cleaning method Download PDF

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Publication number
CN112433446A
CN112433446A CN201910790506.XA CN201910790506A CN112433446A CN 112433446 A CN112433446 A CN 112433446A CN 201910790506 A CN201910790506 A CN 201910790506A CN 112433446 A CN112433446 A CN 112433446A
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China
Prior art keywords
photomask
purging
reticle
detection
detection cavity
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CN201910790506.XA
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Chinese (zh)
Inventor
范志祥
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Priority to CN201910790506.XA priority Critical patent/CN112433446A/en
Publication of CN112433446A publication Critical patent/CN112433446A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Library & Information Science (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a photomask detection device and a photomask cleaning method. The mask inspection device includes: the detection cavity is used for accommodating and detecting whether particles exist on the surface of the photomask or not; and the purging part is arranged at the end part of the detection cavity and is used for performing gas purging on the photomask entering and/or exiting the detection cavity so as to remove particles on the surface of the photomask. The invention saves the time for cleaning the light shield and improves the efficiency for cleaning the light shield; meanwhile, the photoetching defect on the wafer is avoided, so that the photoetching quality is improved, and the product yield is improved.

Description

Photomask inspection apparatus and photomask cleaning method
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a photomask detection device and a photomask cleaning method.
Background
Photolithography is a crucial step in the manufacturing process of semiconductor devices such as Dynamic Random Access Memories (DRAMs). In a photolithography process, the cleanliness of a photomask is an important factor for ensuring the photolithography quality. However, the existing process technology cannot effectively clean the photomask, and particularly, the photomask has no effective cleaning mode in the transmission process, so that the particles on the photomask cause the defect of the photoresist pattern on the wafer during exposure, and the product yield is finally influenced.
Therefore, how to improve the cleaning efficiency of the mask, improve the lithography quality of the wafer, and improve the yield of the product is a technical problem to be solved urgently at present.
Disclosure of Invention
The invention provides a photomask detection device and a photomask cleaning method, which are used for solving the problem of low photomask cleaning efficiency in the prior art so as to improve the photoetching quality and the product yield.
In order to solve the above problems, the present invention provides a mask inspection apparatus, comprising:
the detection cavity is used for accommodating and detecting whether particles exist on the surface of the photomask or not;
and the purging part is arranged at the end part of the detection cavity and is used for performing gas purging on the photomask entering and/or exiting the detection cavity so as to remove particles on the surface of the photomask.
Preferably, the method further comprises the following steps:
and the bearing part is used for bearing the photomask and transmitting the photomask to the detection cavity.
Preferably, the method further comprises the following steps:
a housing, the detection chamber being surrounded by the housing;
the purging part comprises a channel, and the channel is positioned in the interlayer of the shell and used for transmitting gas for purging the photomask.
Preferably, the purge part further includes:
and the air inlet side of the air knife is communicated with the channel, and the air outlet side of the air knife is inclined at a preset angle relative to the bearing part so as to obliquely blow the photomask positioned on the bearing part.
Preferably, the bearing part transmits the photomask to enter and exit the detection cavity along a first direction;
the channel extends in a first direction, the air knife extends in a second direction, and the first direction is perpendicular to the second direction.
Preferably, the preset angle is greater than 0 degree and less than 20 degrees.
Preferably, the method further comprises the following steps:
an exhaust part disposed outside the detection chamber to exhaust the gas for purging.
Preferably, the exhaust unit includes:
and the pipeline is positioned on the surface of the shell, an opening at one end of the pipeline and the purging part are positioned at the same side of the detection cavity, and an opening at the other end of the pipeline is used for being connected with a vacuum pump.
In order to solve the above problems, the present invention further provides a method for cleaning a photomask, comprising the steps of:
providing a detection cavity, wherein the detection cavity is used for accommodating and detecting whether particles exist on the surface of the photomask or not;
and simultaneously when the photomask enters and/or exits the detection cavity, carrying out gas purging on the photomask to remove particles on the surface of the photomask.
Preferably, the step of purging the reticle with gas while the reticle enters and exits the probe chamber includes:
arranging a purging part at the end part of the detection cavity;
and when the photomask enters and exits the detection cavity, the purging part is used for performing gas purging on the photomask.
Preferably, the step of purging the reticle with gas while the reticle enters and/or exits the detection chamber includes:
the reticle is tilted and purged while being transported in a first direction into and/or out of the probe chamber.
Preferably, the step of purging the reticle with gas while the reticle exits the detection chamber includes:
obtaining a detection result of the detection cavity, wherein the detection result comprises the content of particles on the surface of the photomask;
and adjusting the flow rate of the gas for purging transmitted to the photomask by the purging part according to the detection result.
Preferably, the detection result further includes the position distribution of the particles on the surface of the photomask; the photomask cleaning method further comprises the following steps:
and adjusting the purging direction of the purging part according to the detection result.
Preferably, the method further comprises the following steps:
providing a pipeline, wherein an opening at one end of the pipeline and the purging part are positioned at the same side of the detection cavity, and an opening at the other end of the pipeline is used for being connected with a vacuum pump;
and starting the vacuum pump to discharge the gas for purging.
According to the photomask detection device and the photomask cleaning method, the photomask is subjected to gas purging while entering and/or exiting the detection cavity, on one hand, purging is performed while conveying, so that the photomask cleaning time is saved, and the photomask cleaning efficiency is improved; on the other hand, the blowing mode can effectively remove particles such as dust particles on the surface of the photomask, ensure the cleanness of the surface of the photomask, and avoid photoetching defects on the wafer, thereby improving the photoetching quality and improving the product yield.
Drawings
FIG. 1 is a schematic cross-sectional view of a reticle detection apparatus in an embodiment of the present invention;
FIG. 2 is another schematic cross-sectional view of a reticle detection assembly in accordance with an embodiment of the present invention;
FIG. 3 is a flow chart of a reticle cleaning method in an embodiment of the present invention.
Detailed Description
The following describes embodiments of a mask inspection apparatus and a mask cleaning method according to the present invention in detail with reference to the accompanying drawings.
In a photolithography process, before a Reticle is transferred to a position above a wafer to perform the photolithography process, the Reticle needs to be placed in a Reticle Inspection System (IRIS) during the transfer process to detect the particle condition on the surface of the Reticle. However, there is no special cleaning system in the existing photolithography tool to clean the reticle surface, so that the reticle must be taken out from the photolithography tool and cleaned outside the photolithography tool after the reticle detection system detects the particles on the reticle surface. This way of cleaning: on one hand, the process of taking out the photomask from the machine and then feeding the photomask into the machine takes time greatly; on the other hand, the process of cleaning the outside of the machine and then feeding the machine into the machine is time-consuming and labor-consuming; moreover, the photomask may suffer from secondary pollution in the process of being transmitted to the photomask detection system after being cleaned from the outside, so that the detection result of the photomask detection system is abnormal, the photomask needs to repeatedly perform the step of entering and exiting the photoetching machine, and the capacity of the photoetching machine is further reduced.
In order to improve the cleaning efficiency of the mask and improve the lithography quality of the wafer, the present embodiment provides a mask inspection apparatus, fig. 1 is a schematic cross-sectional view of the mask inspection apparatus according to the present embodiment, and fig. 2 is another schematic cross-sectional view of the mask inspection apparatus according to the present embodiment. As shown in fig. 1 and 2, the mask inspection apparatus according to the present embodiment includes:
a detection cavity 15 for accommodating and detecting the existence of particles on the surface of the light shield;
and the purging part is arranged at the end part of the detection cavity 15 and is used for performing gas purging on the photomask entering and/or exiting the detection cavity 15 so as to remove particles on the surface of the photomask.
Specifically, as shown in fig. 1 and 2, the optical mask includes a substrate 201 and a protective film 202, and the substrate 201 includes a lower surface connected to the protective film 202 and an upper surface opposite to the lower surface. The protective film 202 is adhered to the lower surface of the substrate 201, and is used for preventing the pattern on the lower surface of the substrate 201 from being polluted by the external environment. The specific value of the width W4 of the protective film 202 extending from the substrate 201 along the Y-axis direction and the specific value of the thickness H of the protective film 202 along the Z-axis direction can be selected by those skilled in the art according to the specific requirements of the photolithography process, for example, W4 is 15mm, and H is 5 mm.
The mask inspection device described in this embodiment may be, but is not limited to, a mask inspection system (IRIS). When the reticle detection device is an IRIS, the top of the detection chamber 15 may have a granular Particle Detector (PPD). In this embodiment, the end of the detection cavity 15 where the purging portion is disposed may be the end located on the same side as the load port, where the load port is used for the photomask to enter the detection cavity 15; alternatively, the end portion of the reticle may be located on the same side as a load-out port, and the load-out port is used for the reticle to exit from the detection cavity.
Work as sweep the portion with carry the inlet port set up in when surveying the homonymy in chamber 15, the light shield gets into along Y axle positive direction through carrying in port 11 survey the in-process in chamber 15, be located survey chamber 15 tip sweep the portion right in the light shield the upper surface of base plate 201 sweeps, in order to detach to be located particulate matter such as the micronic dust of upper surface. Therefore, when the photomask is detected after the whole photomask enters the detection cavity 15, the probability that the photomask cannot meet the detection requirement can be reduced, the transmission efficiency of the photomask and the cleaning efficiency of the photomask in the photoetching process are improved, the photoetching quality of wafers is improved, and the yield of products is improved. An upper focal length sensor 13 is further disposed above the loading port 11, and is used for detecting the alignment condition of the photomask.
When the purging portion and the load-out port are disposed on the same side of the detection cavity 15, and after the reticle completes detection of surface particles and exits from the detection cavity 15 along the Y-axis negative direction, the purging portion located at the end of the detection cavity 15 purges the upper surface of the substrate 201 in the reticle to remove particles such as dust particles located on the upper surface. Therefore, in the process of conveying the photomask to leave the detection cavity 15, the surface of the photomask can be subjected to gas purging without taking the photomask out to the outside for cleaning, so that the photomask cleaning efficiency is improved, the yield of a photoetching machine table is improved, the probability of secondary pollution is reduced, the photoetching quality of a wafer is improved, and the yield of products is improved.
In this embodiment, the specific type of gas for purging the mask may be selected by those skilled in the art according to actual needs, and may be, for example, but not limited to, Clean Dry Air (CDA), nitrogen gas, or inert gas such as argon gas.
Preferably, the mask detection device further includes:
and the bearing part is used for bearing the photomask and transmitting the photomask to the detection cavity 15.
Specifically, the carrier may be a mechanical clamping device such as a Gripper (grip) or a vacuum suction device such as a suction cup, and is used for carrying and fixing the reticle, and on one hand, transporting the reticle to the detection cavity 15 and transporting the reticle after detection to the outside; on the other hand, the photomask is prevented from shaking when the purging part performs gas purging on the photomask.
Preferably, the mask detection device further includes:
a housing 10, the detection chamber 15 being formed by the housing 10;
the purge portion includes a channel 14, and the channel 14 is located in the interlayer of the housing 10 and is used for transmitting gas for purging the photomask.
Specifically, the channel 14 is formed in the interlayer of the housing 10 by boring an inner hole in the upper portion of the housing 10 forming the detection cavity 15, so that the gas for purging the reticle can be transmitted from the outside to the purge portion, and the material of the housing 10 may be, but not limited to, an alloy material, and may be selected by those skilled in the art according to actual needs.
Preferably, the purge part further includes:
and the air inlet side 161 of the air knife 16 is communicated with the channel 14, and the air outlet side 162 of the air knife 16 is inclined by a preset angle theta relative to the bearing part so as to perform inclined purging on the photomask positioned on the bearing part.
Preferably, the carrier transports the reticle in a first direction into and out of the detection chamber 15;
the channel 14 extends in a first direction, the air knives 16 extend in a second direction, and the first direction is perpendicular to the second direction.
For example, the air knife 16 with carry input port 11 and be located survey the homonymy in chamber 15, work as the light cover is followed Y axle positive direction warp carry input port 11 and get into survey the in-process in chamber 15, be located survey chamber 15 tip air knife 16 is continuously right the upper surface of base plate 201 sweeps, has improved the entering survey chamber 15 the cleanliness factor on light cover surface has reduced survey the unqualified probability of chamber 15 testing result. The direction of the arrow in fig. 1 and 2 indicates the air outlet direction of the air blade 16. The air knife 16 extends in the X-axis direction, so that the contact area of the purge gas from the air knife 16 and the upper surface of the substrate 201 is increased. More preferably, the length of the air knife 16 extending along the X-axis direction is greater than or equal to the width of the substrate 201 along the X-axis direction.
Preferably, the preset angle θ is greater than 0 degree and less than 20 degrees.
Specifically, the inclined purge is more effective in removing particles on the upper surface of the substrate 201. The predetermined angle θ is set to be greater than 0 degrees and less than 20 degrees in order to prevent the protective film 202 from being damaged due to the reflection of the gas flow of the purge gas.
For example, the thickness L2 of the housing 10 surrounding the detection cavity 15 is 20mm, the width W1 and the height L1 of the air knife 16 on the air inlet side 161 are both 5mm, the distance L3 from the bottom of the housing 10 to the bottom of the air knife 16 on the air inlet side 161 is 3mm, the width W3 of the bottom of the housing 10 provided with the air knife 16 on the air outlet side 162 is 13.5mm, and the distance W2 between the edge of the air outlet side 162 closer to the detection cavity 15 and the edge of the housing 10 is 9 mm. The channel 14 is not shown in the cross-section shown in fig. 2.
Preferably, the mask detection device further includes:
and an exhaust part disposed outside the detection chamber 15 to exhaust the gas for purging.
Preferably, the exhaust unit includes:
and the pipeline 12 is positioned on the surface of the shell 10, an opening 121 at one end of the pipeline 12 is positioned on the same side of the detection cavity 15 as the purging part, and the other end of the pipeline 12 is opened for connecting with a vacuum pump.
Specifically, by opening the vacuum pump connected to the pipe 12 while the purging portion purges the reticle with gas, so as to generate a negative pressure in the pipe 12, for example, a pressure of-20000 Pa, thereby pumping out the purging gas and the particles entrained in the purging gas from the pipe 12, the reticle is prevented from secondary contamination after the detection cavity 15 finishes detecting and exits the detection cavity 15, and further the cleaning of the reticle surface is ensured.
Furthermore, the present embodiment further provides a method for cleaning a reticle, and fig. 3 is a flowchart of the method for cleaning a reticle according to the present embodiment. The mask cleaning method according to the present embodiment can be implemented by using the mask inspection apparatus as shown in fig. 1 and 2. As shown in fig. 1-3, the method for cleaning a mask according to the present embodiment includes the following steps:
step S31, providing a detection cavity 15, wherein the detection cavity 15 is used for accommodating and detecting whether particles exist on the surface of the photomask or not;
in step S32, the reticle is purged with gas while entering and/or exiting the probe chamber 15 to remove particles on the reticle surface.
Preferably, the step of purging the reticle with gas while the reticle enters and exits the probe cavity 15 includes:
arranging a purging part at the end part of the detection cavity 15;
the mask is subjected to gas purging by the purge portion while the mask enters and exits the probe chamber 15.
Optionally, when the photomask enters the detection cavity 15, the purging part is used to perform gas purging on the photomask, and when the detection cavity 15 detects that no particles exist on the surface of the photomask or no particles with a size large enough to affect the process quality exist, for example, the particle size is smaller than 50 microns, the photomask is not subjected to gas purging when the photomask moves out of the detection cavity 15, so that the particles subjected to purging sputtering are prevented from falling onto the surface of the photomask; when the detection cavity 15 detects that particles exist on the surface of the photomask or particles with sizes large enough to affect the process quality exist, for example, the particle size is larger than 50 microns, the photomask is subjected to gas purging when being moved out of the detection cavity 15, then the photomask is sent into the detection cavity 15 for detection, and the steps are repeated until the photomask is detected to be qualified.
Preferably, the method for cleaning a mask according to the present embodiment further includes:
exposing the wafer by using the photomask;
and the exposed light shield is sent into a detection cavity 15 for particle detection.
Preferably, when the exposed photomask enters the detection cavity 15, the purging part does not perform gas purging on the photomask, so as to prevent particles on the photomask from being purged in the exposure process, thereby causing misjudgment of the actual exposure effect of the wafer.
Preferably, the step of purging the reticle with gas while the reticle enters and/or exits the detection chamber 15 includes:
the reticle is purged obliquely while being transported in a first direction into and/or out of the detection chamber 15.
Preferably, the step of purging the reticle with gas while the reticle exits the detection chamber 15 includes:
obtaining a detection result of the detection cavity 15, wherein the detection result comprises the content of particles on the surface of the photomask;
and adjusting the flow rate of the gas for purging transmitted to the photomask by the purging part according to the detection result.
Preferably, the detection result further includes the position distribution of the particles on the surface of the photomask; the photomask cleaning method further comprises the following steps:
and adjusting the purging direction of the purging part according to the detection result.
Specifically, after the detection cavity 15 detects the condition of the particles on the surface of the photomask, parameters such as the flow rate and the purge direction of the purge gas of the purge part can be adjusted to directly clean the surface of the photomask in the process that the photomask exits from the detection cavity 15, so that many defects of cleaning outside a lithography machine are avoided, and the yield of the lithography machine is further improved.
In other specific embodiments, parameters such as the flow rate and the purge direction of the purge gas in the purge portion may be adjusted according to the detection result of the previous detection cavity 15 in the process of next transmitting the reticle to the detection cavity 15 for another detection, so as to perform gas purge on the reticle surface in a targeted manner.
Preferably, the method for cleaning the photomask further comprises the following steps:
providing a pipeline 12, wherein an opening at one end of the pipeline 12 and the purging part are positioned at the same side of the detection cavity 15, and an opening at the other end is used for connecting with a vacuum pump;
and starting the vacuum pump to discharge the gas for purging.
According to the photomask detection device and the photomask cleaning method provided by the embodiment of the invention, the photomask is subjected to gas purging while entering and/or exiting the detection cavity, so that purging is performed while conveying, the photomask cleaning time is saved, and the photomask cleaning efficiency is improved; on the other hand, the blowing mode can effectively remove particles such as dust particles on the surface of the photomask, ensure the cleanness of the surface of the photomask, and avoid photoetching defects on the wafer, thereby improving the photoetching quality and improving the product yield.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (14)

1. A mask inspection device, comprising:
the detection cavity is used for accommodating and detecting whether particles exist on the surface of the photomask or not;
and the purging part is arranged at the end part of the detection cavity and is used for performing gas purging on the photomask entering and/or exiting the detection cavity so as to remove particles on the surface of the photomask.
2. The reticle inspection device of claim 1, further comprising:
and the bearing part is used for bearing the photomask and transmitting the photomask to the detection cavity.
3. The reticle inspection device of claim 2, further comprising:
a housing, the detection chamber being surrounded by the housing;
the purging part comprises a channel, and the channel is positioned in the interlayer of the shell and used for transmitting gas for purging the photomask.
4. The reticle inspection device of claim 3, wherein the purge portion further comprises: and the air inlet side of the air knife is communicated with the channel, and the air outlet side of the air knife is inclined at a preset angle relative to the bearing part so as to obliquely blow the photomask positioned on the bearing part.
5. The reticle inspection device of claim 4, wherein the carrier transports the reticle in a first direction into and out of the probe cavity;
the channel extends in a first direction, the air knife extends in a second direction, and the first direction is perpendicular to the second direction.
6. The apparatus of claim 5, wherein the predetermined angle is greater than 0 degrees and less than 20 degrees.
7. The reticle inspection device of claim 3, further comprising:
an exhaust part disposed outside the detection chamber to exhaust the gas for purging.
8. The reticle inspection device of claim 7, wherein the exhaust section comprises:
and the pipeline is positioned on the surface of the shell, an opening at one end of the pipeline and the purging part are positioned at the same side of the detection cavity, and an opening at the other end of the pipeline is used for being connected with a vacuum pump.
9. A method for cleaning a mask, comprising:
providing a detection cavity, wherein the detection cavity is used for accommodating and detecting whether particles exist on the surface of the photomask or not;
and simultaneously when the photomask enters and/or exits the detection cavity, carrying out gas purging on the photomask to remove particles on the surface of the photomask.
10. The method of claim 9, wherein purging the reticle with gas while the reticle is in and out of the probe chamber comprises:
arranging a purging part at the end part of the detection cavity;
and when the photomask enters and exits the detection cavity, the purging part is used for performing gas purging on the photomask.
11. The method of claim 9 or 10, wherein purging the reticle with gas while the reticle enters and/or exits the probe chamber comprises: the reticle is tilted and purged while being transported in a first direction into and/or out of the probe chamber.
12. The method of claim 10, wherein purging the reticle with gas while the reticle exits the probe chamber comprises:
obtaining a detection result of the detection cavity, wherein the detection result comprises the content of particles on the surface of the photomask;
and adjusting the flow rate of the gas for purging transmitted to the photomask by the purging part according to the detection result.
13. The method of claim 11, wherein the inspection result further comprises a distribution of the position of the particles on the reticle surface; the photomask cleaning method further comprises the following steps:
and adjusting the purging direction of the purging part according to the detection result.
14. The method of claim 9, further comprising the steps of:
providing a pipeline, wherein an opening at one end of the pipeline and the purging part are positioned at the same side of the detection cavity, and an opening at the other end of the pipeline is used for being connected with a vacuum pump;
and starting the vacuum pump to discharge the gas for purging.
CN201910790506.XA 2019-08-26 2019-08-26 Photomask inspection apparatus and photomask cleaning method Pending CN112433446A (en)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI760133B (en) * 2021-03-08 2022-04-01 科毅科技股份有限公司 Photomask cleaning apparatus and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI760133B (en) * 2021-03-08 2022-04-01 科毅科技股份有限公司 Photomask cleaning apparatus and method
CN115026060A (en) * 2021-03-08 2022-09-09 科毅科技股份有限公司 Photomask cleaning apparatus and photomask cleaning method
CN115026060B (en) * 2021-03-08 2023-12-22 科毅科技股份有限公司 Mask cleaning apparatus and mask cleaning method

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