KR20090044540A

KR20090044540A - Apparatus for cleaning reticle and method for fabricating semiconductor device using the same

Info

Publication number: KR20090044540A
Application number: KR1020070110675A
Authority: KR
Inventors: 홍성목
Original assignee: 주식회사 하이닉스반도체
Priority date: 2007-10-31
Filing date: 2007-10-31
Publication date: 2009-05-07

Abstract

The present invention relates to a reticle cleaning device and a method of manufacturing a semiconductor device using the same, and in the related art, after grasping a location of particles generated in a reticle and manually removing them using a cleaning gas spray gun, the particle removal process cannot be performed completely. In order to solve the problem of high risk of rework, a reticle cleaning device which is automatically connected with an integrated reticle inspection system (IRIS) device is formed, and the reticle cleaning device is provided with a suction tube along with a cleaning tube that sprays cleaning gas. By further including, the present invention relates to the invention to solve the problem of reattachment of particles separated by the cleaning gas injection, and to perform a quick and safe reticle cleaning process.

Description

Reticle cleaning device and manufacturing method of semiconductor device using same {APPARATUS FOR CLEANING RETICLE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME}

The present invention relates to a reticle cleaning apparatus and a method of manufacturing a semiconductor device using the same, and in the related art, after the position of particles generated in the reticle is detected and manually removed using a cleaning gas spray gun, particles separated by the cleaning gas injection are removed. It relates to the invention to solve the inconvenience of having to reattach to occur the problem of reattachment, and to perform a quick and safe reticle cleaning process.

In general, a semiconductor device manufacturing process includes a Fab process for forming an electrical circuit on a silicon wafer used as a semiconductor substrate, and an electrical die sorting (EDS) for inspecting electrical characteristics of semiconductor devices formed in the fab process. Process and semiconductor devices are classified into package assembly processes in which each is encapsulated with an epoxy resin and individualized.

Here, the fab process includes a deposition process for forming a thin film on a wafer, a chemical or mechanical polishing process for planarizing the thin film, a photolithography process for forming a photoresist pattern on the thin film, and a photoresist pattern. And an ion implantation process or an implant process for making the thin film have electrical properties, a cleaning process for removing impurities on the wafer, and an inspection process for inspecting defects of the thin film or pattern. In this case, the photolithography process includes a coating process for forming a photoresist composition layer on a silicon wafer, a bake process for curing the photoresist composition layer to form a photoresist film, and a reticle pattern as a photoresist film. An exposure process for projecting and a developing process for forming the transferred pattern into a photoresist pattern are included.

Here, the reticle used in the exposure process consists of a very flat plate formation and includes projection patterns for transferring to a plurality of regions set on the wafer. At this time, the plate is formed of a quartz substrate, and the projection patterns are formed to be smaller than or equal to the image transferred to the wafer. Typically the transcription magnification is 1, 5 or 10 times.

However, when contaminants such as particles occur on the reticle, poor patterns may be formed on the wafer due to the contaminants. Therefore, a problem arises in that a semiconductor device formed on a wafer must be reprocessed or discarded.

In order to solve this problem, the exposure autonomy is provided with an inspection system for inspecting contamination levels. The inspection system first detects particles present on the reticle. If particles are found to be above a predetermined range, there is a difficulty in stopping the exposure process and manually removing the foreign substances while the operator visually checks the foreign substances. This results in economic losses since the exposure process has to be stopped until the loss of manpower and the removal of foreign objects.

1 is a schematic diagram illustrating a inspection system of a reticle according to the prior art.

Referring to FIG. 1, projection patterns 20 are formed on the transparent substrate 10 constituting the reticle, and when the dropable particles 30 are formed on the transparent substrate 10 when they are loaded for the exposure process. May occur. The device that detects this is called IRIS (Integrated Reticle Inspection System) device, and is performed using a laser scattering method.

In the case of Y-scanning the transparent substrate 10 of the reticle using an arm, the laser scan device 40 scans the defects by X-scanning. When the particle 30 occurs, the reflection laser becomes irregular, and thus the defect is determined by the detection device 50.

In addition, the lower laser scanning device 45 and the lower detection device 55 may be provided on the surface on which the projection pattern 20 is formed to detect defects occurring in the projection pattern 20.

As such, when the position of the defect is detected by using the IRIS device, the exposure process is stopped, and the operator must manually remove the foreign substances while visually checking the foreign substances. At this time, it is removed by using the N2 gas injection gun (Gun), which causes human and material damages.

2 is a flowchart illustrating a method of manufacturing a semiconductor device according to the prior art.

Referring to FIG. 2, first, a mask code for performing an exposure process is read (Mask Bar Code Reading) (S100) to prepare a necessary reticle. Here, a combination of several reticles is called a mask.

Next, an IRIS test (S110) is performed on the prepared reticle to read the presence / absence of particles. In this case, if the particle is not detected, the exposure process (S130) is performed directly through the mask loading step of aligning the reticle with the mask stage (S120).

However, if a particle is detected, the mask loading step (S140) for inspection is performed, followed by a re-inspection (S150) process of scanning a defect location. If the particles are removed at the time of re-inspection (S150), the process may immediately enter the exposure (S160) process. Otherwise, the particle process may be performed using the cleaning gas injection gun (Gun), and the process may be performed again from the mask code reading (S100). Rework will be required.

As described above, the particle inspection method of the reticle according to the prior art can be easily carried out using an IRIS device, but if a particle is found, it is necessary to perform the particle removal process manually. Will follow. In addition, when manually removing particles, it is not known whether the removal process is normally performed, and thus there is a problem of having to rework from the beginning.

The present invention includes a reticle cleaning device that is automatically associated with an integrated reticle inspection system (IRS) device, wherein the reticle cleaning device further includes a suction tube along with a cleaning tube for injecting the cleaning gas, thereby being separated by the cleaning gas injection. It is an object of the present invention to provide a reticle cleaning device and a method of manufacturing a semiconductor device using the same, which solves a problem of reattaching the particles and performs a safe reticle cleaning process.

Reticle cleaning apparatus according to the present invention

Gas injection nozzle unit formed to automatically find the position of the particles in conjunction with the IRIS (Integrated Reticle Inspection System) device for detecting particles on the reticle and

And a gas suction part formed in a direction in which the gas injected from the gas injection nozzle part is reflected by the reticle.

The gas injection nozzle unit may include a gas supply unit supplying a gas for cleaning, a cleaning tube for injecting the gas at a high pressure, and a first driving unit for moving the cleaning tube according to predetermined coordinates, The cleaning tube may be formed at an angle of 40 to 50 ° with respect to the surface of the reticle, and the gas suction unit may move the suction tube and the suction tube to suck the reflected gas and particles according to predetermined coordinates. It characterized in that it comprises a second drive unit.

In addition, the method of manufacturing a semiconductor device according to the present invention

Detecting particles on the reticle using an IRIS (Integrated Reticle Inspection System) device;

Moving the gas injection nozzle part and the gas suction part of the reticle cleaning device to the position of the particle detected by the IRIS device; and

And spraying the cleaning gas through the gas injection nozzle part to separate the particles, and collecting the separated particles using a gas suction part.

Here, the cleaning gas injection pressure is characterized in that 100 ~ 200 Pascals (Pa), the cleaning gas injection angle is characterized in that the injection at an angle of 40 to 50 ° with respect to the surface of the reticle, The gas is sprayed 2 to 4 times while gradually increasing the pressure for 2 to 4 seconds at intervals of 0.3 to 0.7 seconds, the cleaning gas is characterized in that using the N2 gas, the suction pressure of the gas inlet is It is characterized in that it is maintained at a constant pressure while spraying the cleaning gas to 180 ~ 220 Pascals (Pa).

In addition, the manufacturing method of the semiconductor device according to the present invention in more detail,

Performing a first inspection process on the reticle using an integrated reticle inspection system (IRS) device; and

If particles are not detected in the first inspection process, an exposure process is performed after loading a reticle into the mask stage. If particles are detected, the exposure process is performed after cleaning the reticle using the reticle cleaning apparatus of claim 1. It is characterized by performing.

The method may further include performing a second inspection process using an IRIS apparatus after cleaning the reticle and before performing an exposure process. When the particle is detected again in the second inspection process, the reticle Loading the mask stage and performing a refected defect (RD), wherein if a particle is detected again in the repeated defect (RD) step, the mask code is again After reading, the rework of performing the first inspection step is performed again.

The present invention forms a reticle cleaning device that is automatically associated with an integrated reticle inspection system (IRS) device, wherein the reticle cleaning device further includes a suction tube along with a cleaning tube for injecting the cleaning gas, thereby leaving by the cleaning gas injection. It is possible to solve the problem of reattachment of the particles, and to perform a fast and safe reticle cleaning process, thereby improving the manufacturing process yield and reliability of the semiconductor device.

In addition, a preferred embodiment of the present invention is for the purpose of illustration, those skilled in the art will be able to various modifications, changes, substitutions and additions through the spirit and scope of the appended claims, such modifications and changes are the following claims It should be seen as belonging to a range.

Hereinafter, a reticle cleaning device and a method of manufacturing a semiconductor device using the same according to the present invention will be described in detail with reference to the accompanying drawings.

3 is a schematic view showing a reticle cleaning apparatus according to the present invention.

3 illustrates a reticle cleaning device in conjunction with an integrated reticle inspection system (iris) device (not shown) for detecting particles on a reticle.

First, the reticle 200 is provided. In this case, the reticle 200 is provided with a quartz substrate, and a projection pattern 220 is formed on the reticle 200. In this case, since the projection pattern 220 is disposed to face the ground for exposure, the drop particles 230 have a high probability of occurring on the quartz substrate surface of the reticle 200.

Therefore, the gas injection nozzle portion and the gas suction portion capable of removing particles are preferably formed on the quartz substrate surface. In addition, more preferably, a gas injection nozzle part and a suction part may be formed on a surface on which the projection pattern 220 is formed to remove particles.

Here, the gas injection nozzle unit and the gas suction unit include a first driving unit and a second driving unit to automatically find the position of the particles by using the position information of the particles detected from the IRIS apparatus. In addition, the gas injection nozzle unit includes a gas supply unit (not shown) for supplying gas for cleaning, a cleaning tube 240 and a cleaning tube 240 for injecting the gas at a high pressure, and the gas suction unit reflects the gas And a suction tube 250 for sucking particles. Therefore, the gas suction part is positioned in the direction in which the gas injected from the gas injection nozzle part is reflected by the reticle 200, and the cleaning tube is preferably formed to form an angle of 40 to 50 ° with respect to the surface of the reticle. The gas suction part is preferably formed to be symmetrical with the gas injection nozzle part based on the particle 230.

4A and 4B are schematic views showing a gas nozzle part of the reticle cleaning device according to the present invention.

4A is a front view as seen from the outlet side of the cleaning tube 400, and FIG. 4B is a side view. At this time, the diameter of the outlet edge portion 420 is formed to be 40 to 50% narrower than the diameter of the entire tube in order to increase the injection pressure. Preferably, the diameter of the cleaning tube 400 is formed to 1.0mm, the diameter of the outlet edge portion 420 is formed to 0.5mm.

5A and 5B are schematic views showing the suction part of the reticle cleaning device according to the present invention.

5A is a front view as viewed from the inlet side of the suction tube 440, and FIG. 5B is a side view. At this time, the diameter of the inlet edge portion 430 is formed to be 40 to 50% wider than the diameter of the entire tube in order to increase the suction area. Preferably, the diameter of the suction tube 440 is formed to 1.0mm, the diameter of the inlet edge portion 430 is formed to 1.5mm.

The cleaning method using the above-described reticle cleaning apparatus is as follows.

First, an particle on a reticle is detected using an integrated reticle inspection system (IRS) device, and a gas injection nozzle part and the gas inlet part are moved to the position of the particle detected by the IRIS device.

Next, the cleaning gas is injected through the gas injection nozzle part to separate the particles, and the separated particles are collected using the gas suction part. At this time, the cleaning gas using N2 gas, the cleaning gas injection pressure is adjusted to 100 ~ 200 Pascal (Pa), the cleaning gas injection angle is to be injected to make an angle of 40 ~ 50 ° with respect to the surface of the reticle. In addition, the cleaning gas is injected 2 to 4 times while gradually increasing the pressure for 2 to 4 seconds at intervals of 0.3 to 0.7 seconds. Finally, the suction pressure of the gas suction unit is maintained at a constant pressure while spraying the cleaning gas to 180 ~ 220 Pascals (Pa).

6 is a graph illustrating a method of manufacturing a semiconductor device according to the present invention, showing an embodiment of a reticle cleaning method.

The gas injection pressure is increased three times in steps of 0.5 second intervals from 100 Pascals (Pa) to 200 Pascals (Pa). At this time, the suction pressure is maintained uniformly to 200 Pascals (Pa).

In this way, particles occurring on the lattice can be effectively removed. The presence of the suction tube eliminates the problem of the detached particles reattaching as in the prior art. Therefore, the manufacturing process of the semiconductor device can be performed quickly and safely.

7 is a flowchart illustrating a method of manufacturing a semiconductor device according to the present invention.

Referring to FIG. 7, first, mask code reading S300 for selecting a mask for performing an exposure process is performed.

Next, the reticle to be used in the selected mask is screened and loaded into an integrated reticle inspection system (iris) device, and a first inspection process S310 is performed.

Here, if the particle is not found, the process directly goes to the exposure process S330 through the mask loading process S320 that aligns the reticles with the mask stage.

However, if particles are found, the cleaning process is performed using the reticle cleaning apparatus described with reference to FIG. 3. As described above, a series of cleaning processes that are automatically performed in accordance with particle detection in conjunction with the IRIS apparatus are referred to as a reticle blowing system process S340 in the present invention.

As such, after performing the reticle blowing system process (S340), the reticle is sorted again, loaded into an IRIS (Integrated Reticle Inspection System) apparatus, and the second inspection process (S350) is performed. At this time, since the IRIS device can perform particle inspection quickly and simply, the burden of adding a process is not large.

If it is confirmed that the particles have been completely removed, the process proceeds to the exposure step S360. Since the reticle cleaning apparatus associated with the IRIS apparatus proposed in the present invention can remove almost all particles, most of the processes can be directly transferred to the exposure process S360 here.

However, if the particles are not removed, the exposure process (S390) is performed through the mask loading (S370), the repeated defect (RD) (S380), and the rework process, which are manually performed as in the prior art. .

Through such a process, defects occurring in the reticle can be completely removed and the exposure process can be stably performed.

5A and 5B are schematic views showing a suction part of the reticle cleaning device according to the present invention.

6 is a graph showing a method of manufacturing a semiconductor device according to the present invention.

Claims

A gas injection nozzle unit configured to automatically locate a particle in association with an IRIS (Integrated Reticle Inspection System) device that detects particles on the reticle; And

And a gas suction part formed in a direction in which the gas injected from the gas injection nozzle part is reflected to the reticle.

The method of claim 1,

The gas injection nozzle unit gas supply unit for supplying a gas for cleaning;

A cleaning tube for injecting the gas at a high pressure; And

And a first drive unit for moving the cleaning tube according to predetermined coordinates.

The method of claim 2,

The cleaning tube is a reticle cleaning apparatus, characterized in that formed at an angle of 40 to 50 ° with respect to the surface of the reticle.

The method of claim 1,

The gas suction unit includes a suction tube that sucks the gas and particles that are reflected; And

And a second drive unit for moving the suction tube according to predetermined coordinates.

Moving the gas injection nozzle unit and the gas suction unit of claim 1 to positions of particles detected by the IRIS apparatus; And

And blowing the cleaning gas through the gas injection nozzle part to separate the particles, and collecting the separated particles by using a gas suction part.

The method of claim 5, wherein

The cleaning gas injection pressure is a semiconductor device manufacturing method, characterized in that 100 ~ 200 Pascals (Pa).

The method of claim 5, wherein

The cleaning gas injection angle of the semiconductor device manufacturing method, characterized in that for spraying at an angle of 40 to 50 ° with respect to the surface of the reticle.

The method of claim 5, wherein

The cleaning gas is a method of manufacturing a semiconductor device, characterized in that for two to four injections in increments of pressure for 2 to 4 seconds at intervals of 0.3 to 0.7 seconds.

The method of claim 5, wherein

The said cleaning gas uses N2 gas, The manufacturing method of the semiconductor element characterized by the above-mentioned.

The method of claim 5, wherein

The suction pressure of the gas suction unit is maintained at a constant pressure while spraying the cleaning gas to 180 ~ 220 Pascals (Pa).

Performing a first inspection process on the reticle using an integrated reticle inspection system (iris); And

If particles are not detected in the first inspection process, an exposure process is performed after loading a reticle into the mask stage. If particles are detected, the exposure process is performed after cleaning the reticle using the reticle cleaning apparatus of claim 1. Method for manufacturing a semiconductor device, characterized in that performed.

The method of claim 11,

And performing a second inspection process using an IRIS apparatus after cleaning the reticle and before performing an exposure process.

The method of claim 11,

If particles are detected again in the second inspection process

Loading the reticle into a mask stage; And

A method for manufacturing a semiconductor device, characterized in that it further comprises the step of performing a repeated defect (RD).

The method of claim 13,

If particles are detected again in the Repeated defect (RD) step

And reworking the first inspection step again after reading the mask code again.