CN112349869A - Method for preparing OLED anode by nanoimprint lithography - Google Patents
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- CN112349869A CN112349869A CN202110010052.7A CN202110010052A CN112349869A CN 112349869 A CN112349869 A CN 112349869A CN 202110010052 A CN202110010052 A CN 202110010052A CN 112349869 A CN112349869 A CN 112349869A
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- H10K50/00—Organic light-emitting devices
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- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
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Abstract
The invention discloses a method for preparing an OLED anode by nanoimprint, which is characterized in that an anode pixel point is prepared by the steps of cleaning a silicon substrate, nanoimprint and transfer printing, preparing an anode layer, stripping and the like, and the nanoimprint can directly and mechanically form a nano pattern on ultraviolet curing adhesive on the premise of not using electrons and photons, so that the diffraction phenomenon and the scattering phenomenon in optical exposure are solved, and a high-resolution micro OLED display can be prepared on a large-area size. The quartz template used for imprinting can be reused, an accurate pattern can be obtained with low cost and simple process, the preparation cost of the OLED anode can be reduced, and the yield is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a method for preparing an OLED anode by nanoimprint lithography.
Background
The rapid development of micro-nano technology has been widely and deeply introduced into various industries, such as the micro-display industry. The OLED is a display technology that is considered by the industry to have the most potential for development at present due to its advantages of small thickness, lighter weight, better shock resistance, simple manufacturing process, lower cost, higher luminous efficiency, and the like. OLED displays with dimensions less than 1 inch are commonly used in head or palm-size computer monitors, AR/VR glasses, live-action games, etc., and are widely used.
The anode manufacturing technology of the silicon-based OLED micro-display comprises a traditional stripping method, a dry etching method, a wet etching method and the like, the methods are applied to actual production and need to be repeatedly used for exposure through a traditional photoetching technology, the traditional photoetching technology can cause diffraction and electron scattering phenomena in optical exposure, so that the problem of poor resolution is caused, and in addition, the processing cost is increased when a simple and repeated pattern structure with a large area size as a substrate is prepared in batches.
Therefore, it is important to provide an anode manufacturing method with good repeatability, low cost and high yield by combining the nanoimprint technology and the transfer printing technology which do not generate diffraction and scattering phenomena.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the traditional preparation method of the OLED anode needs multiple times of photoetching exposure, causes diffraction and scattering phenomena in optical exposure, and can cause the problems of poor resolution and increased processing cost in large-area and batch production of simple pattern repetitive structures.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a method for preparing an OLED anode by nanoimprint lithography is characterized by comprising the following steps;
preparing a first quartz template with a plurality of first grooves and a second quartz template with a plurality of second grooves by adopting an etching method, wherein the first grooves correspond to the two positions of the first grooves, the distance between every two adjacent first grooves is 0.8 micrometer, and the width of each second groove is larger than that of each first groove;
cleaning a silicon substrate with a driving circuit, cleaning the silicon substrate with acetone and deionized water, drying the silicon substrate with a nitrogen gun, and removing residual water vapor on the silicon substrate in a drying oven at 50-70 ℃ for 10 minutes;
uniformly spin-coating a layer of ultraviolet curing glue on the silicon substrate, firstly, carrying out anti-sticking treatment on the first quartz template, accurately attaching the first quartz template to the surface of the ultraviolet curing glue by using an alignment process, curing the ultraviolet curing glue by using ultraviolet light to form a patterned pixel point, and finally, separating the first quartz template from the silicon substrate;
removing the ultraviolet curing adhesive remained in the non-pixel area after imprinting through plasma;
dropping polydimethylsiloxane on the second quartz template to fill the second groove, and slowly scraping the redundant polydimethylsiloxane on the surface by using a scraper;
step six, uniformly spin-coating a layer of polyvinyl acetate of an adhesion layer on the surface of the cured second quartz template, inverting the second quartz template with the polydimethylsiloxane on the imprinted silicon substrate through an alignment process, applying stress to enable the second quartz template to be bonded with the imprinted silicon substrate, and removing the second quartz template to obtain a T-shaped micro-nano structure;
evaporating an anode layer, wherein the anode layer comprises at least one conductive film layer of a titanium film layer, a nickel film layer, an aluminum film layer and a platinum film layer, and the thickness of the anode layer is 40-60 nanometers;
and step eight, removing the ultraviolet curing adhesive, the polydimethylsiloxane and the nano metal layer attached to the T-shaped structure in the T-shaped structure by adopting one solution of N-methylpyrrolidone solution and acetone solution through ultrasonic treatment.
Preferably, the anti-sticking treatment in the third step is specifically performed by immersing the first quartz template in a mixed solution of anhydrous n-octane and silane in a ratio of 200 to 1 in an anhydrous environment for 2 to 3 minutes, taking out the first quartz template, and standing the first quartz template in an anhydrous n-octane solution at 70 ℃ for 20 to 30 minutes to form a hydrophobic layer with a low friction coefficient on the surface of the first quartz template.
Preferably, the plasma in the fourth step is oxygen plasma, the flow rate is 20 to 30 standard milliliters per minute, the power is 100 to 150 watts, and the etching time is 10 to 30 seconds.
Preferably, in the fifth step, the distance between the two adjacent grooves on the second quartz template is 0.6 micron, the polydimethylsiloxane is a mixed solution formed by a prepolymer and a curing agent in a mass ratio of 10: 1, the mixed solution is kept stand at room temperature for 1 to 2 hours to remove air bubbles in the mixed solution, and the mixed solution is slowly poured into the second quartz template.
Preferably, the curing of the polydimethylsiloxane in the sixth step is carried out under the condition that the curing is carried out at the temperature of 70-80 ℃ for 1-2 hours, and the adhesion energy between the polydimethylsiloxane and the polyvinyl acetate is larger than that between the polydimethylsiloxane and the second quartz template.
The preparation of the quartz template comprises the following procedures;
cleaning and ashing a quartz substrate, cleaning the quartz substrate by using acetone and deionized water, blow-drying the quartz substrate by using a nitrogen gun, drying the quartz substrate in a 120-DEG oven for 20 minutes, and bombarding the surface of the quartz substrate by using plasma;
coating a positive photoresist on the quartz substrate in a spinning way, covering a mask plate on the photoresist, and obtaining a photoresist graph consistent with the mask plate graph through the procedures of prebaking, exposing, developing and fixing;
thirdly, reactive ion etching, wherein the quartz substrate is bombarded by etching gas, and a concave-convex structure is etched on the quartz substrate; and fourthly, removing the photoresist by using an N-methyl pyrrolidone solution, and then cleaning and drying to prepare the quartz template.
Preferably, the etching gas includes at least one of trifluoromethane and sulfur hexafluoride.
The invention has the beneficial effects that:
the invention discloses a nano-imprinting method for manufacturing an anode of a micro OLED display (less than 1 inch) by using a silicon wafer as a substrate, wherein nano-imprinting can directly and mechanically form a nano-pattern on ultraviolet curing glue on the premise of not using electrons and photons, so that the diffraction phenomenon and the scattering phenomenon in optical exposure are solved, and the micro OLED display with high resolution can be prepared on a large-area size. The quartz template used for imprinting can be reused, an accurate pattern can be obtained with low cost and simple process, the preparation cost of the OLED anode can be reduced, and the yield is improved.
Drawings
FIG. 1 is a schematic structural diagram of a spin-coated UV-curable adhesive according to an embodiment of the present invention.
FIG. 2 is a schematic diagram of a fitting structure of a quartz template according to an embodiment of the invention.
FIG. 3 is a schematic diagram of the plasma after removing residual glue according to the embodiment of the invention.
FIG. 4 is a schematic diagram of a quartz template illustrating a fourth step performed by the embodiment of the present invention.
FIG. 5 is a schematic flow chart of a transfer process according to an embodiment of the present invention.
FIG. 6 is a schematic diagram of a nano metal layer evaporated after transfer printing according to an embodiment of the present invention.
Fig. 7 is a schematic diagram of a patterned pixel according to an embodiment of the invention.
In the figure: 1. the light-emitting diode comprises a silicon substrate, 2 parts of ultraviolet curing glue, 3 parts of a quartz template I, 4 parts of a quartz template II, 5 parts of polydimethylsiloxane, 6 parts of polyvinyl acetate and 7 parts of a nano metal layer.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
As shown in fig. 1 to 7, a method for fabricating an anode of an OLED by nanoimprint includes the steps of:
preparing a first quartz template 3 with a plurality of first grooves and a second quartz template 4 with a plurality of second grooves by adopting an etching method, wherein the first grooves correspond to the second grooves, the distance between every two adjacent first grooves is 0.8 micrometer, and the width of each second groove is larger than that of each first groove;
cleaning the silicon substrate 1 with the driving circuit, cleaning the silicon substrate 1 with acetone and deionized water, drying the silicon substrate 1 by a nitrogen gun, and removing residual water vapor on the silicon substrate 1 in a drying box at 50-70 ℃ for 10 minutes;
uniformly spin-coating a layer of ultraviolet curing glue 2 on the silicon substrate 1, firstly, performing anti-sticking treatment on a quartz template I3, accurately attaching the quartz template I3 to the surface of the ultraviolet curing glue 2 by using an alignment process, irradiating the ultraviolet light to enable the ultraviolet curing glue 2 to be cured to form a patterned pixel point, and finally, separating the quartz template I3 from the silicon substrate 1; the anti-sticking treatment in the step is specifically carried out by soaking the quartz template I3 in a mixed solution of anhydrous n-octane and silane in a ratio of 200 to 1 in an anhydrous environment for 2 to 3 minutes, taking out the quartz template I3, placing the quartz template I3 in an anhydrous n-octane solution at 70 ℃, standing the quartz template I3 for 20 to 30 minutes, and forming a hydrophobic layer with a low friction coefficient on the surface of the quartz template I3;
step four, removing the ultraviolet curing adhesive 2 remained in the non-pixel area after imprinting through plasma; the plasma in the step adopts oxygen plasma, the flow rate is 20 to 30 standard milliliters per minute, the power is 100 to 150 watts, and the etching time is 10 to 30 seconds;
dropping polydimethylsiloxane 5 on the second quartz template 4 to fill the second groove, and slowly scraping the redundant polydimethylsiloxane 5 on the surface by using a scraper; in the step, the distance between the adjacent second grooves on the second quartz template 4 is 0.6 micron, the polydimethylsiloxane 5 is a mixed solution formed by a prepolymer and a curing agent in a mass ratio of 10: 1, the mixed solution is kept stand at room temperature for 1 to 2 hours to remove bubbles in the solution, and then the mixed solution is slowly poured into the second quartz template 4;
step six, uniformly spin-coating a layer of polyvinyl acetate 6 as an adhesion layer on the surface of the cured second quartz template 4, inverting the second quartz template 4 with polydimethylsiloxane 5 on the imprinted silicon substrate 1 through an alignment process, applying stress to enable the second quartz template 4 and the imprinted silicon substrate to be bonded, and removing the second quartz template 4 to obtain a T-shaped micro-nano structure; the curing condition of the polydimethylsiloxane 5 in the step is that the polydimethylsiloxane 5 is cured for 1 to 2 hours at the temperature of 70 to 80 ℃, and the adhesion energy between the polydimethylsiloxane 5 and the polyvinyl acetate 6 is greater than that between the polydimethylsiloxane 5 and the quartz template II 4.
Evaporating an anode layer, wherein the anode layer comprises at least one conductive film layer of a titanium film layer, a nickel film layer, an aluminum film layer and a platinum film layer, and the thickness of the anode layer is 40-60 nanometers;
and step eight, removing the ultraviolet curing adhesive 2, the polydimethylsiloxane 5 and the nano metal layer 7 attached to the T-shaped structure in the T-shaped structure by adopting one solution of N-methylpyrrolidone solution and acetone solution through ultrasonic treatment.
The preparation of the quartz template comprises the following procedures;
cleaning and ashing a quartz substrate, cleaning the quartz substrate by using acetone and deionized water, blow-drying the quartz substrate by using a nitrogen gun, drying the quartz substrate in a 120-DEG oven for 20 minutes, bombarding the surface of the quartz substrate by using plasma to form a concave-convex surface, increasing the surface area of the concave-convex surface and preventing the degumming problem;
coating a positive photoresist on a quartz substrate in a spinning way, covering a mask plate on the photoresist, and obtaining a photoresist graph consistent with the mask plate graph through the procedures of prebaking, exposing, developing and fixing;
thirdly, reactive ion etching, wherein the quartz substrate is bombarded by etching gas, and a concave-convex structure is etched on the quartz substrate;
and fourthly, removing the photoresist by using an N-methyl pyrrolidone solution, and then cleaning and drying to prepare the quartz template.
The etching gas comprises at least one of trifluoromethane and sulfur hexafluoride.
It will be obvious to those skilled in the art that the present invention may be varied in many ways, and that such variations are not to be regarded as a departure from the scope of the invention. All such modifications as would be obvious to one skilled in the art are intended to be included within the scope of this claim.
Claims (5)
1. A method for preparing an OLED anode by nanoimprint lithography is characterized by comprising the following steps;
preparing a first quartz template with a plurality of first grooves and a second quartz template with a plurality of second grooves by adopting an etching method, wherein the first grooves correspond to the two positions of the first grooves, the distance between every two adjacent first grooves is 0.8 micrometer, and the width of each second groove is larger than that of each first groove;
cleaning a silicon substrate with a driving circuit, cleaning the silicon substrate with acetone and deionized water, drying the silicon substrate with a nitrogen gun, and removing residual water vapor on the silicon substrate in a drying oven at 50-70 ℃ for 10 minutes;
uniformly spin-coating a layer of ultraviolet curing glue on the silicon substrate, firstly, carrying out anti-sticking treatment on the first quartz template, accurately attaching the first quartz template to the surface of the ultraviolet curing glue by using an alignment process, curing the ultraviolet curing glue by using ultraviolet light to form a patterned pixel point, and finally, separating the first quartz template from the silicon substrate;
removing the ultraviolet curing adhesive remained in the non-pixel area after imprinting through plasma;
dropping polydimethylsiloxane on the second quartz template to fill the second groove, and slowly scraping the redundant polydimethylsiloxane on the surface by using a scraper;
step six, uniformly spin-coating a layer of polyvinyl acetate of an adhesion layer on the surface of the cured second quartz template, inverting the second quartz template with the polydimethylsiloxane on the imprinted silicon substrate through an alignment process, applying stress to enable the second quartz template to be bonded with the imprinted silicon substrate, and removing the second quartz template to obtain a T-shaped micro-nano structure;
evaporating an anode layer, wherein the anode layer comprises at least one conductive film layer of a titanium film layer, a nickel film layer, an aluminum film layer and a platinum film layer, and the thickness of the anode layer is 40-60 nanometers;
and step eight, removing the ultraviolet curing adhesive, the polydimethylsiloxane and the nano metal layer attached to the T-shaped structure in the T-shaped structure by adopting one solution of N-methylpyrrolidone solution and acetone solution through ultrasonic treatment.
2. The method for nanoimprinting preparation of the anode of an OLED according to claim 1, characterized in that: the anti-sticking treatment in the third step is specifically carried out by soaking the first quartz template in a mixed solution of anhydrous n-octane and silane in a ratio of 200 to 1 in an anhydrous environment for 2 to 3 minutes, taking out the quartz template, placing the first quartz template in an anhydrous n-octane solution at 70 ℃ and standing for 20 to 30 minutes to form a hydrophobic layer with a low friction coefficient on the surface of the first quartz template.
3. The method for nanoimprinting preparation of the anode of an OLED according to claim 1, characterized in that: in the fourth step, the plasma adopts oxygen plasma, the flow rate is 20 to 30 standard milliliters per minute, the power is 100 to 150 watts, and the etching time is 10 to 30 seconds.
4. The method for nanoimprinting preparation of the anode of an OLED according to claim 1, characterized in that: in the fifth step, the distance between the two adjacent grooves on the second quartz template is 0.6 micron, the polydimethylsiloxane is a mixed solution formed by a prepolymer and a curing agent in a mass ratio of 10: 1, the mixed solution is kept stand at room temperature for 1 to 2 hours to remove air bubbles in the solution, and the mixed solution is slowly poured into the second quartz template.
5. The method for nanoimprinting preparation of the anode of an OLED according to claim 1, characterized in that: and curing the polydimethylsiloxane under the condition that the polydimethylsiloxane is cured at the temperature of 70-80 ℃ for 1-2 hours, wherein the adhesion energy between the polydimethylsiloxane and the polyvinyl acetate is greater than that between the polydimethylsiloxane and the second quartz template.
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| CN116525475A (en) * | 2023-07-05 | 2023-08-01 | 湖北芯研投资合伙企业(有限合伙) | Wafer-level hybrid bonding method based on pre-positioning self-compensating alignment |
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