CN112250034A - Process for releasing film in manufacturing process of thermopile infrared detector - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000725 suspension Substances 0.000 claims abstract description 17
- 238000005260 corrosion Methods 0.000 claims abstract description 15
- 230000007797 corrosion Effects 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims description 20
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 238000001259 photo etching Methods 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 229910052681 coesite Inorganic materials 0.000 claims description 13
- 229910052906 cristobalite Inorganic materials 0.000 claims description 13
- 229910052682 stishovite Inorganic materials 0.000 claims description 13
- 229910052905 tridymite Inorganic materials 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000011265 semifinished product Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 29
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J2005/123—Thermoelectric array
Abstract
The invention discloses a process for preparing a release film of a thermopile infrared detector, which comprises the steps of preparing a metal layer easy to corrode in advance in a region needing to be released, sequentially generating a silicon nitride layer, a polycrystalline silicon layer, an electrode and a silicon dioxide layer, quickly corroding the metal layer easy to corrode, and corroding a lower Si layer by a certain depth to form a suspension window cavity by using a gas corrosion method, so that a film layer where a thermopile is positioned can be completely and cleanly released, a thermopile unit with very good consistency is prepared, the yield is greatly improved, the process is simple, and the working efficiency is high.
Description
Technical Field
The invention relates to the technical field of sensor preparation, in particular to a process for releasing a film in the manufacturing process of a thermopile infrared detector.
Background
The thermopile infrared sensor is a very excellent infrared detector, compared with a pyroelectric infrared sensor, the thermopile infrared sensor has the advantages of clean output signal, convenient circuit configuration, and large-scale manufacture by adopting a semiconductor MEMS process, and can be consistent with a CMOS process, so the manufacture cost can be greatly reduced. The manufacturing process of the thermopile infrared sensor MEMS process relates to an oxide layer manufacturing process, a photoetching process, a metal layer sputtering process, an ion implantation process, a corrosion process and the like. However, for the whole thermopile manufacturing process, the final floating window release stripping process is the most critical, and the release stripping quality determines the performance index of the whole sensor unit and the overall yield index, and particularly the effect of manufacturing the thermopile array is more increased. In the conventional technology, wet back cavity etching or dry front opening etching is often used. There is conventionally a wet back cavity etch (as shown in fig. 1): the Si material under the suspension window film needs to be corroded by KOH corrosive liquid, a back surface photoetching technology is needed, the process is complex and difficult, the efficiency is low, the film is easy to crack, and the yield is low. And dry front side opening etch (as shown in figure 2): and (4) opening an etching opening on the suspension window, etching Si with a certain thickness at the position below the suspension window film by adopting a XeF2 gas etching method, and releasing and stripping the suspension window. There are problems that peeling efficiency is low and peeling is not complete under the thin film, affecting uniformity of the thermopile unit.
Aiming at the problems of complex process, low efficiency, easy film breakage, incomplete film glass and the like in the prior art, a simple and efficient film release effect is urgently needed to be provided, and the technology for the thermopile preparation process is especially important.
Disclosure of Invention
The invention aims to avoid the defects in the prior art and provides a simple and efficient process for releasing a film in the preparation process of a thermopile infrared detector, which has a good film release effect.
The purpose of the invention is realized by the following technical scheme:
the process for releasing the film in the manufacturing process of the thermopile infrared detector comprises the following steps:
(1) thermal generation of SiO2Film formation: on a polished Si substrateFormation of SiO by thermal oxidation2A film;
(2) sputtering a metal layer: corroding and removing SiO with the same size at corresponding positions according to the size of the thermopile suspension window2Forming a cavity in the remaining un-etched SiO2Applying photoresist protection on the film, sputtering a corrosion-prone metal layer with the thickness of 0.5 micrometer in the cavity, and cleaning;
(3) and (3) generating a silicon nitride layer: a silicon nitride layer with the thickness of 0.5 micron is generated on the whole by a chemical vapor deposition method;
(4) and (3) generating a polycrystalline silicon layer: forming a polysilicon layer with the thickness of 0.8 microns on the silicon nitride layer by using a low-pressure chemical vapor deposition method, and injecting a material B (boron element) onto the polysilicon layer by using an ion implanter;
(5) preparing a polysilicon strip: applying photoresist on the polycrystalline silicon layer, and manufacturing the polycrystalline silicon layer into polycrystalline silicon strips by using a photoetching machine according to a preset arrangement mode, wherein the polycrystalline silicon strips are thermocouple strips;
(6) formation of SiO2Layer (b): using low pressure vapor deposition to form 0.5 micron SiO in the semi-finished product of step (5)2The layer is used as an insulating layer, and a contact window is manufactured through a photoetching process to expose the polycrystalline silicon in the contact window;
(7) preparing an electrode: sputtering a metal layer on the sputtering polysilicon on the semi-finished product in the step (6), contacting the exposed upper surface of the polysilicon in the contact window with the metal layer, photoetching and corroding the metal layer by using a photoetching machine to keep the metal layer on the contact window, and forming an electrode of the thermocouple strip by using the metal layer on the contact window;
(8) and (3) corroding the metal layer: etching through SiO over a corrosion-prone metal layer2Corrosion channels of the layer, the polycrystalline silicon and the silicon nitride layer, wherein corrosion liquid enters from the corrosion channels and completely corrodes the metal layer which is easy to corrode, and the metal layer is cleaned;
(9) manufacturing a suspension window cavity: the XeF2 gas enters the cavity etched with the metal layer from the etching channel, and further etches the Si substrate below to ensure SiO in the cavity2The film is completely released.
It is preferable that，SiO2The thickness of the film was 0.5. + -. 0.1. mu.m.
Preferably, step (2) is performed by directly etching SiO with hydrogen fluoride2A film.
Preferably, the corrosion-susceptible metal layer is an aluminum layer or a copper layer.
Preferably, the implantation of B ions in step (4) makes the resistance 50 ± 5 ohms.
Preferably, the etching solution used in step (8) is FeCl3And (3) solution.
The invention has the beneficial effects that:
the technology for releasing the film in the preparation process of the thermopile infrared detector of the invention prepares a layer of easily corroded metal layer in advance in the area needing to be released, sequentially generates a silicon nitride layer, a polysilicon layer, an electrode and a silicon dioxide layer, then quickly corrodes the easily corroded metal layer, and corrodes the lower Si layer by a certain depth to form a suspension window cavity by using a gas corrosion method, so that the film layer where the thermopile is positioned can be completely and cleanly released, a thermopile unit with very good consistency is prepared, the yield is greatly improved, the technology is simple, and the working efficiency is high. The method solves the problems of difficult alignment of back wet etching and low yield of broken suspending window film in the manufacturing process, and also solves the problems of long etching time, low efficiency, poor consistency of chip units and the like caused by incomplete and uneven etching in front dry etching. And a foundation is laid for manufacturing the high-resolution infrared thermopile array.
Drawings
The invention is further illustrated by means of the attached drawings, the content of which is not in any way limitative of the invention.
FIG. 1 is a schematic diagram of the product processing of a prior art wet back cavity etch process.
FIG. 2 is a schematic illustration of the product processing of a prior art dry front side open etch process.
FIG. 3 is a schematic illustration of the product formation of the process of the present invention.
Fig. 1 to 3 include:
1 '-thermocouple, 2' -infrared absorber;
1-Si substrate, 2-SiO2A film, 3-a cavity, 4-a corrodible metal layer,
5-silicon nitride layer, 6-polysilicon layer, 7-polysilicon strip, 8-SiO2Layer, 9-electrode, 10-corrosion channel, 11-suspension window cavity.
Detailed Description
The invention is further illustrated by the following examples.
Example 1
The process for releasing the film in the manufacturing process of the thermopile infrared detector comprises the following steps of:
(1) thermal generation of SiO2Film formation: SiO formation on polished Si substrates using thermal oxidation2Film, SiO2The thickness of the (silicon dioxide) film was about 0.5 μm;
(2) sputtering a metal layer: direct etching of SiO with hydrogen fluoride at corresponding locations according to the size of the thermopile suspension window2The film is made into a cavity, and the un-corroded SiO is left2Applying photoresist protection on the film, sputtering a corrosion-prone metal layer with the thickness of 0.5 micrometer in the cavity, and cleaning;
wherein, a layer of metal layer which can be quickly and easily corroded is prefabricated below the suspension window needing to be released so as to release SiO for facilitating the corrosion of the subsequent metal layer2The film forms a suspension window, and the size of the metal layer is slightly smaller than that of the suspension window layer; the corrosion-prone metal layer is an aluminum layer or a copper layer;
(3) and (3) generating a silicon nitride layer: forming a 0.5 micron thick silicon nitride layer on the metal layer (which should be the whole) by chemical vapor deposition;
wherein, the vapor deposition reacts two gaseous raw materials which can generate silicon nitride together to generate silicon nitride to be deposited on the surface of the substrate;
(4) and (3) generating a polycrystalline silicon layer: forming a polysilicon layer with the thickness of 0.8 microns on the silicon nitride layer by using a low-pressure chemical vapor deposition method, and injecting a material B (boron element) onto the polysilicon layer by using an ion implanter; b ions are implanted to enable the square resistance to be 50 +/-5 ohms;
the material B ions are injected onto the processing layer by using an ion implanter under the vacuum condition, a P-type layer and an N-P-N structure can be generated, and a good single crystal layer is formed by annealing, so that the resistance and other performance changes can be accurately controlled;
(5) preparing a polysilicon strip: applying photoresist on the polycrystalline silicon layer, and manufacturing the polycrystalline silicon layer into polycrystalline silicon strips by using a photoetching machine according to a preset arrangement mode, wherein the polycrystalline silicon strips are thermocouple strips;
(6) formation of SiO2Layer (b): using low pressure vapor deposition to form 0.5 micron SiO in the semi-finished product of step (5)2The layer is used as an insulating layer, and a contact window is manufactured through a photoetching process to expose the polycrystalline silicon in the contact window;
wherein, under the condition of low pressure, two or more gaseous raw materials which can generate the polycrystalline silicon react together to generate the polycrystalline silicon to be deposited on the surface of the substrate;
(7) preparing an electrode: sputtering a metal layer on the sputtering polysilicon on the semi-finished product in the step (6), contacting the exposed upper surface of the polysilicon in the contact window with the metal layer, photoetching and corroding the metal layer by using a photoetching machine to keep the metal layer on the contact window, and forming an electrode of the thermocouple strip by using the metal layer on the contact window;
(8) and (3) corroding the metal layer: etching through SiO over a corrosion-prone metal layer2Etching the layer, polysilicon and silicon nitride layer to form FeCl3(ferric chloride) corrosive liquid enters from the corrosion channel and completely corrodes the metal layer which is easy to corrode, and the metal layer is cleaned;
the corrosion channel is etched at the position where the suspension window does not influence the thermocouple strip, and a hot area of the thermopile does not need to be used as an opening for releasing, so that more thermocouple pairs can be designed, and higher device detection rate is obtained;
(9) manufacturing a suspension window cavity: the XeF2 gas enters the cavity etched with the metal layer from the etching channel, and further etches the Si substrate below to ensure SiO in the cavity2The film is completely released; wherein, the gas can flow inside and outside to corrodeEtching gas is transversely and longitudinally etched at the same speed, and the etching time is controlled according to actual production;
wherein XeF is used2The (xenon difluoride) is used as an etching gas, the XeF2 gas can be adsorbed on the surface of a silicon wafer and spontaneously decomposed to generate xenon and fluorine, the fluorine and the silicon wafer are etched at a high rate, products of etching reaction can be removed by a vacuum system, pollution cannot be caused, and the etching can be carried out at room temperature.
The silicon dioxide thermal oxidation method, the chemical vapor deposition method, the low pressure chemical vapor deposition method, the ion implantation process, the photolithography process, the wet etching method, and the XeF method2Dry etching methods are all prior art, and the principle and specific operation of these processes should be clear to those skilled in the art. The invention is based on MEMS technology processing, firstly generating a silicon oxide layer on a polished Si wafer by heat, then corroding part of silicon oxide, protecting with photoresist, sputtering a metal layer on the corroded cavity part, the thickness of which is approximately the same as that of the silicon oxide layer, continuing to generate silicon nitride by using a gas phase precipitation method, manufacturing polycrystalline silicon on the silicon oxide layer, the thickness of which is about 0.8 micron, then paving a layer of photoresist, photoetching to form a polycrystalline silicon strip, continuing to generate a silicon oxide layer by a precipitation method, sputtering a layer of platinum to form two platinum electrodes, then manufacturing a corrosion channel, then corroding the metal layer by using a wet method, and corroding the lower Si substrate by using XeF2 gas by using a dry method to a certain depth, so that a thin film layer where a thermopile is located is completely and cleanly.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and do not limit the protection scope of the claims. It will be understood by those skilled in the art that various modifications and equivalents may be made to the embodiments of the present invention without departing from the spirit and scope of the invention.
Claims (6)
1. The process for releasing the film in the manufacturing process of the thermopile infrared detector is characterized in that: the method comprises the following steps:
(1) thermal generation of SiO2Film formation: using thermal oxidation on polished Si substratesFormation of SiO2A film;
(2) sputtering a metal layer: corroding and removing SiO with the same size at corresponding positions according to the size of the thermopile suspension window2Forming a cavity in the remaining un-etched SiO2Applying photoresist protection on the film, sputtering a corrosion-prone metal layer with the thickness of 0.5 micrometer in the cavity, and cleaning;
(3) and (3) generating a silicon nitride layer: a silicon nitride layer with the thickness of 0.5 micron is generated on the whole by a chemical vapor deposition method;
(4) and (3) generating a polycrystalline silicon layer: forming a polysilicon layer with the thickness of 0.8 microns on the silicon nitride layer by using a low-pressure chemical vapor deposition method, and injecting material B ions (elements) onto the polysilicon layer by using an ion implanter;
(5) preparing a polysilicon strip: applying photoresist on the polycrystalline silicon layer, and manufacturing the polycrystalline silicon layer into polycrystalline silicon strips by using a photoetching machine according to a preset arrangement mode, wherein the polycrystalline silicon strips are thermocouple strips;
(6) formation of SiO2Layer (b): using low pressure vapor deposition to form 0.5 micron SiO in the semi-finished product of step (5)2The layer is used as an insulating layer, and a contact window is manufactured through a photoetching process to expose the polycrystalline silicon in the contact window;
(7) preparing an electrode: sputtering a metal layer on the sputtering polysilicon on the semi-finished product in the step (6), contacting the exposed upper surface of the polysilicon in the contact window with the metal layer, photoetching and corroding the metal layer by using a photoetching machine to keep the metal layer on the contact window, and forming an electrode of the thermocouple strip by using the metal layer on the contact window;
(8) and (3) corroding the metal layer: etching through SiO over a corrosion-prone metal layer2Corrosion channels of the layer, the polycrystalline silicon and the silicon nitride layer, wherein corrosion liquid enters from the corrosion channels and completely corrodes the metal layer which is easy to corrode, and the metal layer is cleaned;
(9) manufacturing a suspension window cavity: let XeF2Gas enters the cavity corroded by the metal layer from the corrosion channel to further corrode the lower Si substrate to ensure SiO in the cavity2The film is completely released.
2. The thermopile infrared detector of claim 1, wherein: SiO 22The thickness of the film was 0.5. + -. 0.1. mu.m.
3. The thermopile infrared detector of claim 1, wherein: directly corroding SiO by using hydrogen fluoride in step (2)2A film.
4. The thermopile infrared detector of claim 1, wherein: the corrosion-prone metal layer is an aluminum layer or a copper layer.
5. The thermopile infrared detector of claim 1, wherein: and (4) injecting B ions to enable the resistance to be 50 +/-5 ohms.
6. The thermopile infrared detector of claim 1, wherein: the corrosive liquid used in the step (8) is FeCl3And (3) solution.
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| CN101776483A (en) * | 2009-12-29 | 2010-07-14 | 中国科学院上海微***与信息技术研究所 | Non-refrigerant thermopile infrared detector and manufacturing method thereof |
| CN102079499A (en) * | 2010-12-20 | 2011-06-01 | 北京大学 | Cantilever trace detection sensor and preparation method thereof |
| CN102757011A (en) * | 2011-04-25 | 2012-10-31 | 中北大学 | Micromechanical thermopile infrared detector and manufacturing method thereof |
| JP2014060699A (en) * | 2012-08-20 | 2014-04-03 | Seiko Instruments Inc | Electronic device, and method of manufacturing electronic device |
| CN111637978A (en) * | 2020-06-24 | 2020-09-08 | 南京信息工程大学 | Digital infrared temperature sensor of DFN encapsulation |
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