CN1342887A - Structure self-aligning method for making infrared absorption layer of infrared snesor for micromechanical heat stack - Google Patents
Structure self-aligning method for making infrared absorption layer of infrared snesor for micromechanical heat stack Download PDFInfo
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- CN1342887A CN1342887A CN 01131975 CN01131975A CN1342887A CN 1342887 A CN1342887 A CN 1342887A CN 01131975 CN01131975 CN 01131975 CN 01131975 A CN01131975 A CN 01131975A CN 1342887 A CN1342887 A CN 1342887A
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Abstract
A structure self-aligning method for preparing the infrared absorption layer of infrared sensor which is a micromechanical heat stack is disclosed. The front and back surfaces of monosilicon wafer are corroded at same time to obtain a window on the back of heat stack, whose sizes are similar to those of infrared absorption area. By the aligning action of said window, black body is evaporated and deposited on the back of heat stack in nitrogen atmosphere. Its advantages are simple process, low cost and precise location of infrared absorption layer.
Description
Technical field
The present invention relates to a kind of structure self-aligning method and make the method for the infrared absorption layer of micromachined thermopile infrared detector, belong to the micromechanics field.
Background technology
Infrared eye is a critical component the most basic in the infrared gear, along with infrared technique use increasingly extensive, infrared eye itself is also had higher requirement.Thermopile IR detector is a kind of of thermal infrared detector, and its principle of work is a Seebeck effect, just thermoelectric effect.When two kinds of different materials forming thermopair constitute the closed-loop path,, will in loop, produce electromotive force if having temperature difference between two nodes.Early stage thermopile IR detector is the method for utilizing mask vacuum coating, the thermocouple material deposited to obtain on plastics or the alumina substrate, and size of devices is bigger, and is difficult for producing in batches.At the beginning of the eighties, flourish along with microelectric technique proposed the notion of micromachined thermopile infrared detector, and K.D.Wise etc. utilize the micromechanics manufacturing technology to produce thermopile IR detector at first.Compare with thermopile IR detector in the past, the advantage of micromachined thermopile infrared detector is: one, have high sensitivity, the loose working environment and the spectral response of non-constant width; Two, with the standard ic process compatibility, with low cost and suitable batch process.
Micromachined thermopile infrared detector mainly is made up of thermal reactor structure and infrared absorption layer.The thermal reactor structure is made up of, thermojunction district and cold junction district thermocouple, in order to improve the performance of detector, needs good heat insulation structural, makes the thermojunction district slow to the heat conduction in cold junction district, and Seebeck effect is remarkable.In the silicon-base micro-mechanical thermopile IR detector, generally be the cold junction district, and the thermojunction district is chosen on the membrane structure that supports thermal reactor with the silicon substrate, i.e. infrared absorption layer region.Typical structure as shown in Figure 1.Support membrane is generally the composite membrane of monox and silicon nitride, itself infrared radiation is had certain absorption, but absorptivity is less; Under the fixing situation in cold junction district, improve the temperature in thermojunction district, promptly increasing the absorption of infrared radiation is very significant for the raising of performance.For this reason, the infrared absorption layer of growing on support membrane utilizes its characteristic that the high-absorbility and the wide spectrum of infrared radiation are absorbed, in order to improve the performance of thermal infrared detector.Obtain desirable assimilation effect, to the requirement of infrared absorption layer be: high-absorbility and less film thickness.Usually having three kinds of methods to realize the growth of infrared absorption layer, is respectively the method for evaporated metal under metal foil embrane method, electrochemical plating deposition platinum black and the blanket of nitrogen.For micromachined thermopile infrared detector, the infrared absorption layer of not only will growing, wish that also it has certain shape, just on support membrane, form the zone of an infrared-sensitive, thermojunction district as thermal reactor, trivial not with silica-based cold junction, heat is conducted from the thermojunction district to the cold junction district along thermocouple.About in the report of thermopile IR detector, there was not anything to mention substantially in the past about the content of how to make infrared absorption district with definite shape.It is generally acknowledged the method that can adopt similar serigraphy, this requires to make in addition corresponding mask plate, and the cost of manufacture of this method is higher, also has the inaccurate problem in location simultaneously in the manufacturing process.
Summary of the invention
The problem that exists when in the past making infrared absorption layer, the present invention bases oneself upon micromechanical process, and the corrosion hole structure of utilizing anisotropic etch to generate behind to support membrane autoregistration deposition infrared absorption layer, forms the infrared-sensitive district, as shown in Figure 2 from silicon chip.
Feature of the present invention is that the front and back from monocrystalline silicon piece corrodes simultaneously, thereby obtain at the thermal reactor back side one with the similar window of infrared absorption district size, by this window autoregistration effect, under blanket of nitrogen, evaporate black matrix, make black matrix directly be deposited on the back side of thermal reactor, and need not to prepare special mask, also need not alignment, thereby simplified technological process greatly.Its concrete technological process will be introduced in Fig. 3.
Fig. 3-1～4 is for forming the concrete processing step of this corrosion structure.
(1) on the monocrystalline silicon piece 7 of (100), with Low Pressure Chemical Vapor Deposition (LPCVD) deposition one deck silicon nitride 9, depositing temperature is 750 ℃-850 ℃ earlier, and thickness is the 0.1-0.2 micron; Deposit one deck low-temperature oxidation silicon fiml LTO again, or with the first deposition one deck polysilicon of LPCVD, depositing temperature is 600 ℃-700 ℃, thickness is the 0.2-0.4 micron, again with its whole oxidations, form one deck monox 8, then on monox, deposit one deck silicon nitride 9, so far formed the composite dielectric film of " silicon nitride-monox-silicon nitride " sandwich structure with LPCVD.Or first thermal oxide obtains the oxide layer of a layer thickness 0.5-0.6 micron on (100) monocrystalline silicon piece, then with LPCVD method deposition one deck silicon nitride, depositing temperature is 800 ℃, and thickness is the 0.1-0.2 micron, forms the composite dielectric film of " monox-silicon nitride ".On these two kinds of composite membranes, continue to expand boron on its surface and mix, make the boron ion concentration reach 10 with LPCVD method deposition one deck polysilicon
15Centimetre
-3Behind the order of magnitude, with its top layer oxidation, utilize oxide layer to do mask, photoetching polysilicon strip figure obtains polysilicon strip 10 (shown in Fig. 3-1) with dry etching.
(2), make polysilicon strip surface coverage one deck monox 8 with the monoblock silicon chip.Lithography fair lead figure then, fairlead is with so that metal and polysilicon formation Ohmic contact.Behind hydrofluorite corrosion oxidation silicon, obtain fairlead figure 13 (as Fig. 3-2).
(3) at silicon chip surface deposition layer of metal, general available aluminium, gold, platinum etc.Then photoetching metal wire 11 is shaped through excessive erosion, and the thermocouple that has just formed polysilicon and metal is to structure (as Fig. 3-3).
(4) at the positive photoetching corrosion window of silicon chip, utilize dry etching, and the method for wet etching, remove window " silicon nitride-monox-silicon nitride " layer or " monox-silicon nitride " layer on every side, form front etch window 14.Carry out back side alignment corrosion window 15 then, remove monox, expose the silicon of substrate with the hydrofluorite corrosion.Use anisotropic etchant Tetramethylammonium hydroxide or potassium hydroxide, the pros and cons to silicon under 50 ℃ of-90 ℃ of temperature ranges corrodes simultaneously, obtains the thermal reactor structure.Under blanket of nitrogen, be mask at last with corrosion window 15, from silicon chip back side autoregistration evaporated metal black matrix 12, this black matrix is positioned at the back of dielectric support film, so far just obtain the infrared absorption layer of a complete infrared thermopile detector, form detector (Fig. 3-4) together with the above-mentioned thermal reactor structure that obtains.
In order further to set forth marked improvement of the present invention and substantive distinguishing features, deeply compare with typical micromachined thermopile infrared detector again.
Fig. 1 is typical micromachined thermopile infrared detector structural representation.Can be seen by Fig. 1-1, use anisotropic etchant, after tetramethyl aqua ammonia (TMAH) or potassium hydroxide (KOH) corrosion, stay the very thin composite dielectric film of one deck 2 at the top of silicon substrate 1, sidewall is (111).This tunic is generally silicon nitride-monox composite membrane, or silicon nitride-monox-silicon nitride composite membrane, and film links to each other one by one with matrix, and the centre does not have hole.Thermal reactor structure 3 is arranged above the film, and infrared absorption district 4, wherein the thermojunction district 5 of thermal reactor is positioned near the infrared absorption district 4, and cold junction district 6 is on silicon substrate 1.
What Fig. 1-2 provided is the sectional view of this device.Its manufacturing process is on a slice (100) monocrystalline silicon 7, with Low Pressure Chemical Vapor Deposition (LPCVD) deposited silicon nitride 9 and polysilicon film, the whole thermal oxides of the latter are generated monox 8, and with LPCVD method deposition one deck silicon nitride, this three constitutes the compound supporting film of one deck sandwich-like again.The deposit spathic silicon film expands boron and mixes then, forms polysilicon strip 10 through photoetching, etching, as the part of thermocouple.Plated metal forms metal wire 11 by photoetching, caustic solution again, has so far just formed the thermoelectric pile structure of polysilicon and metal.Then silicon chip is carried out back side alignment corrosion window, with the anisotropic etchant corrosion, stayed the composite dielectric film of one deck silicon nitride-monox-silicon nitride at the silicon chip top, sidewall is (111).At surface deposition one deck black matrix 12,, just obtained a complete micromechanics infrared thermopile detector at last as infrared absorption layer.Wherein making in the technological process of absorption layer needs to locate mask, and technology is comparatively complicated.
Fig. 4 is the infrared thermopile structural representation that utilizes the corrosion structure autoregistration to make.What this example adopted is inclined drawn suspension beam support membrane structure, corrodes simultaneously through pros and cons, obtains black matrix deposition window 17, the black matrix material is from the structure back side, be evaporated on the compound support membrane by this deposition window, form the black matrix of a hexagonal shape, as the infrared absorption district of thermoelectric pile.
This shows, the present invention makes the infrared absorption layer of micromachined thermopile infrared detector of structure self-aligning, because the structure that anisotropic etch generates can pass through to adjust accurately control such as corrosion temperature and etching time, so the location of infrared absorption layer can be very accurate; Simultaneously, owing to be the autoregistration deposition,, can reduce cost of manufacture like this so need not make the location mask plate in addition; Except support membrane, also have infrared absorbing material on the silicon substrate back side in cold junction district and the corrosion hole sidewall (111) and deposit up, but, do not have what influence, so also need not consider the problem eliminated for cold junction district temperature because these position heat conduction are very fast.In sum, adopting method for making of the present invention, is that benifit is arranged very much for the performance raising of micromachined thermopile infrared detector and the reduction of cost.
Description of drawings
Fig. 1 is typical micromachined thermopile infrared detector structural representation
The synoptic diagram that utilizes corrosion structure Alignment Method deposition infrared absorption layer that Fig. 2 proposes for the present invention
Fig. 3 is the concrete process sequence diagram of method shown in Figure 2
Fig. 4 is the infrared thermopile structural representation that utilizes the corrosion structure autoregistration to make
Among the figure, the implication of each digital representative is respectively:
1-(silicon) matrix; 2-composite dielectric film; 3-thermal reactor; 4-infrared absorption district; 5-thermojunction district; 6-cold junction district; 7-monocrystalline silicon; 8-monox; 9-silicon nitride; 10-polysilicon; 11-metal wire; 12-black matrix; 13-fairlead; 14-front etch window; 15-back surface corrosion window; 16-frame; 17-black matrix deposition window.
Embodiment
Embodiment 1
Earlier with low pressure chemical gas phase (LPCVD) deposition one deck silicon nitride layer 9, wherein the LPCVD depositing temperature is 800 ℃ on (100) monocrystalline silicon piece 7, and the thickness of silicon nitride layer is 0.15 micron; And then to use LPCVD deposit spathic silicon, depositing temperature in the above be 640 ℃, and thickness is 0.6 micron, all thermal oxide generates monox 8, again with LPCVD deposition one deck silicon nitride, 0.1 micron of thickness, thereby the sandwich layer of formation " silicon nitride-monox-silicon nitride ".
Then with LPCVD deposition one deck polysilicon, thickness is 0.6 micron, expands boron and mixes, and makes it have certain face resistance; With its surface heat oxidation, photoetching thermocouple silicon strip shape is a mask with the monox again, forms thermocouple silicon strip 10 with dry etching, and bar is wide to be ten to tens microns, longly is wide several times to tens times of bar.
With the thermal oxide once more of polysilicon top layer, the lithography fair lead figure obtains fairlead 13 with the hydrofluorite corrosion.
At whole surface deposition metal level, can select gold (Au) in this example for use is metal level again.Make bonding jumper 11 shapes that are used to form thermocouple then by lithography, the polysilicon strip of bonding jumper and doping is realized Ohmic contact by fairlead, and it is right to form thermocouple, becomes the main composition of thermal reactor 3.
Positive photoetching corrosion window 14 removes silicon nitride with dry etching, removes monox with the hydrofluorite corrosion, and the monocrystalline silicon under the composite dielectric film 7 is come out.Carry out back side alignment corrosion window 15 again, remove monox, expose the silicon of substrate with hydrofluorite.Utilize monox and composite dielectric film as mask then, corrode simultaneously, finally, obtain structure as shown in Figure 2 in the corrosion break-through of silicon chip centre with anisotropic etchant one Tetramethylammonium hydroxide (TMAH) pros and cons to silicon under 80 ℃ of temperature.This corrosion hole is over against the thermal reactor center of hanging oneself from a beam, and as black matrix deposition window 17, depositing window with this is mask with it for we, and it at blanket of nitrogen deposit black matrix, is obtained a hexagon black matrix 12 at the overarm back side, as the infrared absorption district (Fig. 4) of thermoelectric pile.
Embodiment 2
First thermal oxide on (100) monocrystalline silicon piece obtains one deck monox, and thickness is 0.5 micron, and then with LPCVD deposition one deck silicon nitride, depositing temperature is 800 ℃, and thickness is 0.15 micron, obtains the composite dielectric film of one deck " monox-silicon nitride ".With LPCVD deposition one deck polysilicon, thickness is 0.6 micron again, after expansion boron mixes, and the photoetching polysilicon strip, the surface deposition metallic aluminium, right with polysilicon composition thermocouple.When treating the final etching structure, use KOH instead and corrode, obtain the thermal reactor structure.All the other technologies are with embodiment 1.
Claims (5)
1. a structure self-aligning is made the infrared absorption layer method of micromechanical heat stack infrared eye, it is characterized in that corroding simultaneously from the pro and con of monocrystalline silicon piece, obtain at the thermal reactor back side one with the similar window of infrared absorption district size, alignment effect by this window, under blanket of nitrogen, evaporate black matrix, make black matrix be deposited on the behind of thermal reactor.
2. make the infrared absorption layer method of micromechanical heat stack infrared eye by the described structure self-aligning of claim 1, it is characterized in that concrete making step is:
(1) on the monocrystalline silicon piece of (100), earlier with Low Pressure Chemical Vapor Deposition (LPCVD) deposition one deck silicon nitride, again with LPCVD deposition one deck polysilicon, and with its whole oxidations, form one deck monox, on monox, deposit one deck silicon nitride again, so far formed the composite dielectric film of silicon nitride-monox-silicon nitride sandwich structure with LPCVD; Or first thermal oxide obtains oxide layer on the single-chip of (100), then uses the LPCVD method, deposition one deck silicon nitride, the composite dielectric film of formation monox-silicon nitride; Continue after surface expansion boron mixes, with its top layer oxidation, to utilize oxide layer to do mask with LPCVD method deposition one deck polysilicon on these two kinds of composite membranes, photoetching polysilicon strip figure obtains polysilicon strip with dry etching;
(2) with the monoblock silicon chip, make polysilicon strip surface coverage one deck monox, photoetching makes metal and polysilicon form the fairlead figure of Ohmic contact then, behind hydrofluorite corrosion oxidation silicon, obtains the fairlead figure;
(3) at silicon chip surface deposition layer of metal, general available aluminium, gold, platinum; Then the photoetching metal wire is shaped through excessive erosion, and the thermocouple that has just formed polysilicon and metal is to structure;
(4) at the positive photoetching corrosion window of silicon chip, utilize dry etching, and the method for wet etching, remove window silicon nitride-monox-silicon nitride layer on every side, form the front etch window; Carry out back side alignment corrosion window then, remove monox, expose the silicon of substrate with the hydrofluorite corrosion.Use anisotropic etchant corrosion under 50 ℃ of-90 ℃ of temperature ranges, is corroded simultaneously to the pros and cons of silicon, obtains the thermal reactor structure; Be mask with the corrosion window under blanket of nitrogen at last, from silicon chip back side autoregistration evaporated metal black matrix, this black matrix is positioned at the back of dielectric support film, so far just obtains the infrared absorption layer of a complete micromachined thermopile infrared detector.
3. press the method that the described structure self-aligning of claim 2 is made the micromachined thermopile infrared detector infrared absorption layer, it is characterized in that the silicon nitride film depositing temperature is 750 ℃-850 ℃ in the composite dielectric film of described silicon nitride-monox-silicon nitride sandwich structure, thickness is the 0.1-0.2 micron; Silicon oxide film is LTO film or the elder generation's deposition one deck polysilicon that direct low temperature depositing obtains, and becomes monox by the polysilicon thermal oxide, and the depositing temperature of polysilicon is 600 ℃-700 ℃, and thickness is the 0.2-0.4 micron.
4. press the method that the described structure self-aligning of claim 2 is made the micromachined thermopile infrared detector infrared absorption layer, it is characterized in that described composite dielectric film is the composite bed of monox-silicon nitride, the thickness 0.5-0.6 micron of silicon oxide layer, 800 ℃ of the depositing temperatures of silicon nitride layer, thickness are the 0.1-0.2 micron.
5. the method for making the micromachined thermopile infrared detector infrared absorption layer by the described structure self-aligning of claim 2 is characterized in that used anisotropic etchant is Tetramethylammonium hydroxide or KOH.
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