CN1120737A - 低电感功率半导体模块 - Google Patents
低电感功率半导体模块 Download PDFInfo
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Abstract
本发明的功率半导体模块(1)中,在冷却器(3)的两侧装有安装功率半导体部件(2)的基片(8)。若干功率半导体部件(2)与接触金属板堆(4)连接,这些接触金属板与冷却器(3)平行,从而获得了很低电感的模块结构。
Description
本发明涉及功率半导体电子器件。
这样一种功率半导体模块已经在专利公开文献DE3937045A1中叙述过。
一般讲,功率半导体模块内有若干个半导体器件,这些半导体器件可以组成一个逻辑功能单元。例如,整流器,装有反并联二极管的单一开关或者相位组件。各类模块与当今大功率半导体领域常用盘封器件的差别主要在于冷却器与电源连接线之间是电绝缘的。
这类模块(晶闸管、晶体管、IGBT、MOSFET、二极管模块)现在已广泛应用于高达1200伏和数百安的功率范围,而且主要用于工业动力。大电流的模块一般是由若干个单一组件组成的,在模块中它们是并联连接的,或者同时并联若干个模块。
目前模块的性能,就电流承受能力和最大闭锁电压而言,其进一步提高受下列问题所限:
—模块内部结构的寄生电感不允许并联任意多个器件。寄生电感的增加有可能使接通和分断过程出现不允许有的振荡。其中,用于并联的各个器件,由于随着面积增大制造成本增加且可靠性降低,所以器件面积不能任意增大。
—随着模块、基片面积的增加,可靠性的问题也就增多,特别就所要求的抗温度交变能力而言,因为随着结构尺寸的增加和由于所使用的各种材料有不同的热膨胀系数,机械负荷越来越大。
—对于具有高闭锁强度的器件所要求的电绝缘强度,在一般情况下,用常规模块所达到的漏电距离显得太短。
—与盘封器件的结构相比,常规模块的热阻较大。其原因是模块热接触和电接触是分开的,这是由模块所用材料决定的,这些材料与金属相比热导率较小,而且只能通过器件的主引线之一散热。盘封器件两个电极都可以散热。
—模块用螺钉(典型的在所有4个角上)固定在散热板上或者冷却器上。因此,对于面积很大的模块,可能在基片中部不能保证良好可靠的热接触,而且这种接触在工作期间随着时间的延长而发生改变。
—模块的主要电极引线是并排装在其上侧的。因此直流电压引线就需绕弯,从而引入一定的电感。
因此R.Bayerer等人在前面提到的专利公开文献DE3937045中试图减少杂散电感,并提出一种几何结构,能适用于安装较大数量的功率晶体管。为此目的三条主要引线用宽的金属带制造,彼此之间有小的间距,并且按其几何排列组成了带状线接线端。向模块底部垂直导出接线要求比较复杂的连接技术,而且也使彼此间的充分电绝缘造成了困难,特别是当要求小电感时更为突出。
与此相反,在专利公开文献DE4103486A1中H.J.Krokoszinski等人致力于改善热传导,使模块从两侧冷却。然而其缺点是,冷却剂也要环绕冲洗直流电压接线端,因而冷却剂必须是电绝缘的(例如去离子水)。为此直流电压接线端也需制成环状。
因此,本发明的目的是,提出一种功率半导体模块以解决前面提出的问题并适用于极高的功率。
此项目的是采用如下所述特征加以解决的:
装有至少一个功率半导体部件的功率半导体模块,其下端固定在一个冷却器上,其特征在于:
在冷却器两侧装有功率半导体部件;
功率半导体部件与平行伸向冷却器、相互重叠而又导电的接触金属板协同动作。
本发明的核心是,在一个冷却器的两侧装有功率半导体部件并且这些部件与低电感叠层接触金属板连接。
一个优选的实施例其特征在于,在冷却器的每一侧功率半导体部件形成半个半桥式模块。功率半导体部件最好包括一个基片,在基片上至少装有一个具有反并联二极管的功率半导体开关。冷却器中最好通入冷却液体,而且整个装置装在保护外壳内。
本发明结构的优点主要在于,此模块具有足够的冷却,因为在冷却器两侧都装有部件,而且这些部件直接装配在冷却器上。从而与已知的模块相比去掉了模块至冷却器的热过渡区。
使用金属叠片连接还使直流电压一侧的电流不必绕路,从而可使电感达到最小。因此也可以在模块内部或部件内部毫无问题地并联大量小面积器件。
下面借助附图中的实施例进一步阐述本发明:
图1为半桥式电路装置;
图2为一个本发明功率半导体模块的截面图;
图3为一个功率半导体部件的俯视图。
在符号表中列出了附图中使用的符号及其意义。在图中相同的部分用相同的符号表示。
开关大功率器件的一项主要应用是变流器电路,用于把直流电压转换成交流电压。对于此种应用每相各需要两个开关及所属二极管。这种所谓的半桥式电路构成了变流器电路的最小逻辑组件。图1示出了这种半桥式电路。
目前最大功率半桥式电路只能由两个单一开关模块组成。因为把全部功能只集成在一个模块中将使模块的面积很大,而且由于前面已经阐明的种种限制,这样的模块是不可能实现的。
因此本发明的目标是实现适用于最大功率的半桥式电路模块。图2示出了这样一种模块的截面图。模块中包括冷却器(3),有若干冷却通道(7)从中穿过并且接线端(6)用于通入冷却剂(例如加防冻剂的水)。冷却器(3)的两侧安装基片(8)。基片(8)是由电绝缘、然而导热尚好的材料组成的,例如氧化铝、氮化铝或者氧化铍。根据冷却器材料的不同或者是把这些基片焊接在冷却器上(例如DCB氧化铝瓷焊在铜上)或者粘在冷却器上(例如氮化铝瓷粘在铝上)。其它连接技术例如等离子体喷镀也是可以考虑的。
每次都是预先把分立器件(例如IGBT和二极管)安装在基片(8)的上表面,彼此连接并且进行预测试。图3示出了一块已经装好器件的基片(8)俯视图。
在一个已实现了的实施例中每个基片上安装的元器件体现了具有反并联二极管(11)的功率半导体开关(10)的功能。功率半导体开关(10)和二极管(11)自身可以由许多分立元器件组成。一般情况下,装配好的基片(8)构成的功率半导体部件(2)原则上可具有任意功能。
这些功率半导体部件(2)采用适当成形的导电的接触金属板(4)连接在一起。这些金属板(4)最好由相同的材料或者热膨胀系数与冷却器(3)相匹配的材料构成。在各金属板之间夹有没画出的绝缘板。接触金属板(4)和绝缘板组成板堆(例如粘在一起)并与冷却器(3)机械连接。
在冷却器(3)的两侧用这些板堆以低电感连接各基片(8)。用粘合或者焊接(根据金属板的材料)方法把基片与各自的金属板堆连接在一起。
在已制成的实施例中,冷却器(3)每一侧的基片(8)都是已叙述过的单一开关单元。因此,冷却器(3)的每一侧都有一个“四分之一电桥”,而整个模块(1)则组成一个半电桥。如图1所示,一个这样的半电桥具有一个正电极接线端(12)、一个负电极接线端(13)和一个交流电压接线端(14)。开关(10)经控制电极接线端(15、16)接通和分断。此外,为了监视故障还各备有测试接线端(17、18)。因此为了连接这种半桥式模块(1),接触金属板堆就应该包括相应数量的金属板(4)。
主要接线端(正电极、负电极、交流电极接线端)的接触金属板(4)的排列,最好如图2所示。从一侧引出直流电压接线端(12和13),从另一侧引出交流电压接线端(14),此接线端同时构成在冷却器(3)两侧排列的四分之一电桥的连接。
为了使基片(8)上的器件(10和11)与接触金属板(4)连接,或者在基片上制成导电金属条(9),或者使器件与接触金属板(4)直接连接。在已实现的模块中,二极管(11)的阴极与功率半导体开关(10)的相当于一个阳极的接线端是这样连接的,即这两个器件用它们的底边焊接在基片上。
最后,为了防止外界的影响,对如此制成的模块(1)进行了保护,即加上保护外壳(5),并且,灌注了例如硅胶。
因为这两个直流电压接线端(12、13)不像通常的模块并排排列而是上下重叠,因此电流不经过绕弯,从而不产生附加的电感。如果采用当今技术上的常规结构,直流电压的馈电以上下重叠的平板形式引出,这样就可以把模块以最佳方式用螺纹连接、最好是插接。这里示出的实施例其直流一侧用的是插接。绝缘材料制成的隔片(例如楔形)引向插头并且同时保证必要的漏电距离。
这样一种模块(1)现在满足了对最大功率的半桥式模块或者总的讲对最大功率功率半导体模块提出的全部要求:
—足够的冷却:器件经电绝缘直接装配在冷却器(3)上,从而去掉了用现有技术制造的模块中模块至冷却器的热过渡区。对已制成的模块所计算的并由实验证实了的阻挡层与冷却剂之间的热阻比常规模块达到的热阻值约小两倍。从而这个阻值也低于市场销售的盘封器件的热阻。
—低电感结构:在直流电压一侧(这里电感是很关键的)采用板状电极,电流不必绕路可以使电感很小。从而就可以毫无问题地并联大量小面积器件。
—结构尺寸与热疲劳强度:在冷却器两侧装配部件可以实现最小结构尺寸和最佳利用可供使用的冷却面积。使用较小接触面积(小面积的基片,典型的10cm2)和仔细选择用于冷却器、连接技术和平板电极的材料,使由于不同的热膨胀系数引起的应力达到最小。从而得到优良的负荷疲劳强度。
—绝缘与漏电距离:本发明提出的模块结构按照工业标准规定可以用足够厚和尺寸足够大的绝缘材料使通导电流的接触区与冷却器及控制极接线端和测试极接线端之间有足够的距离。这一点无损于对半桥式模块提出的其它特性要求。
—至电路的机械和电气连接:因为冷却器已安装在模块内,所以模块可以水平或垂直安装。这种模块不必适应预先确定的固定板和/或冷却板的几何尺寸。把模块机械固定在导轨上是有利的。模块装在导轨上以后,再固定到其最终位置。
当然,上述结构的功率半导体模块不仅限于半桥式电路装置,而且还可以很好地用于其它功能。
符号表1功率半导体模块2功率半导体部件3冷却器4接触金属板5外壳6冷却液接口7冷却通道8基片9导电金属带10功率半导体开关11二极管12正电极接线端13负电极接线端14交流电压接线端15、16控制极接线端17、18测量接线端
Claims (10)
1.装有至少一个功率半导体部件(2)的功率半导体模块(1),其下端固定在一个冷却器(3)上,其特征在于:
—在冷却器(3)两侧装有功率半导体部件(2);
—功率半导体部件(2)与平行伸向冷却器(3)、相互重叠而又导电的接触金属板(4)协同动作。
2.根据权利要求1所述的功率半导体模块(1),其特征在于,功率半导体部件(2)至少合有一个带有反并联二极管(11)的功率半导体开关(10),特别是IGBT,这些部件固定在由电绝缘然而导热性能良好的材料制成的基片(8)上,特别是用氧化铝、氮化铝或氧化铍制成的基片上。
3.根据权利要求2所述的功率半导体模块(1),其特征在于,安装在冷却器(3)某一侧的功率半导体部件(2)中的二极管(11)的阳极接线端经相应的接触金属板(4)与直流电压源的正电极接线端(12)连接,在冷却器(3)上另一侧安装的功率半导体部件(2)中的二极管(11)的阴极接线端经另一块接触金属板(4)与直流电压源的负电极接线端(13)连接,以及各另一侧的二极管(11)的阴极或阳极接线端经一个共同的接触金属板(4)与一交流电压接线端(14)连接。
4.根据权利要求3所述的功率半导体模块(1),其特征在于:
—装在基片(8)上的导电金属带(9)用作功率半导体开关(10)和二极管(11)的接线端;
—二极管(11)的阴极接线端与功率半导体开关(10)的与阳极相当的接线端直接装在基片上。
5.根据权利要求4所述的功率半导体模块,其特征在于,功率半导体开关(10)和二极管(11)的其余接线端,特别是二极管的阳极接线端、功率半导体开关(10)的控制极接线端(15、16)、测试接线端(17、18)以及与一个阴极相当的接线端与其它的导电金属带(9)连接;另一方面这些金属带(9)与相应的接触金属板(4)协同动作。
6.根据权利要求4所述的功率半导体模块(1),其特征在于,功率半导体开关(10)与二极管(11)的其余接线端特别是二极管(11)的阳极接线端、功率半导体开关(10)的控制极接线端(15、16)、测试接线端(17、18)以及与一个阴极相当的接线端直接与相应的接触金属板(4)协同动作。
7.根据上述权利要求之一所述的功率半导体模块(1),其特征在于,冷却器(3)中通有冷却液体,并在冷却器(3)上装有适当的连通冷却液体的接口(6)和冷却通道(7)。
8.根据上述权利要求之一所述的功率半导体模块(1),其特征在于,制造接触金属板(4)的材料的热膨胀系数与冷却器(3)的热膨胀系数相匹配。
9.根据上述权利要求之一所述的功率半导体模块(1),其特征在于,冷却器(3)与功率半导体部件(2)及接触金属板(4)都包装在保护外壳(5)内,而接触金属板(4)则作为模块的接线端从保护外壳(5)内引出。
10.根据上述权利要求之一所述的功率半导体模块(1),其特征在于,在接触金属板(4)之间夹有绝缘板。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4421319A DE4421319A1 (de) | 1994-06-17 | 1994-06-17 | Niederinduktives Leistungshalbleitermodul |
DEP4421319.0 | 1994-06-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1120737A true CN1120737A (zh) | 1996-04-17 |
Family
ID=6520891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN95107021A Pending CN1120737A (zh) | 1994-06-17 | 1995-06-16 | 低电感功率半导体模块 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5574312A (zh) |
EP (1) | EP0688053B1 (zh) |
JP (1) | JPH088397A (zh) |
CN (1) | CN1120737A (zh) |
DE (2) | DE4421319A1 (zh) |
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Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5892279A (en) * | 1995-12-11 | 1999-04-06 | Northrop Grumman Corporation | Packaging for electronic power devices and applications using the packaging |
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FR2809281B1 (fr) | 2000-05-22 | 2002-07-12 | Alstom | Dispositif electronique de puissance |
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CN109511278B (zh) | 2017-07-14 | 2022-06-17 | 新电元工业株式会社 | 电子模块 |
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US11616844B2 (en) | 2019-03-14 | 2023-03-28 | Sphero, Inc. | Modular electronic and digital building systems and methods of using the same |
FR3105716B1 (fr) * | 2019-12-18 | 2022-07-01 | Valeo Siemens Eautomotive France Sas | Équipement électrique comprenant une barre de connexion électrique refroidie par deux faces d’un dissipateur thermique |
EP3893615A1 (en) * | 2020-04-07 | 2021-10-13 | Hamilton Sundstrand Corporation | Power converter assemblies with busbars |
DE102022208130A1 (de) | 2022-08-04 | 2024-02-15 | Zf Friedrichshafen Ag | Halbbrückenmodul für einen Stromrichter mit einer kompakten Bauweise und gleich-zeitig effizienter Kühlung von Halbleiterschaltelementen |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2611749C3 (de) * | 1976-03-19 | 1980-11-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiteranordnung mit einem über Spannbolzen durch Druck kontaktierbaren Halbleiterbauelement |
JPS60101958A (ja) * | 1983-11-08 | 1985-06-06 | Rohm Co Ltd | ダイオ−ド装置の製造方法 |
FR2591801B1 (fr) * | 1985-12-17 | 1988-10-14 | Inf Milit Spatiale Aeronaut | Boitier d'encapsulation d'un circuit electronique |
US4989070A (en) * | 1988-11-10 | 1991-01-29 | Coriolis Corporation | Modular heat sink structure |
DE3931634A1 (de) * | 1989-09-22 | 1991-04-04 | Telefunken Electronic Gmbh | Halbleiterbauelement |
JPH03136338A (ja) * | 1989-10-23 | 1991-06-11 | Mitsubishi Electric Corp | 半導体装置およびその製造のためのロウ付け方法 |
DE3937045A1 (de) * | 1989-11-07 | 1991-05-08 | Abb Ixys Semiconductor Gmbh | Leistungshalbleitermodul |
US5077595A (en) * | 1990-01-25 | 1991-12-31 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
DE4103486A1 (de) * | 1991-02-06 | 1992-08-20 | Abb Patent Gmbh | Anordnung zur kuehlung waermeerzeugender bauelemente |
DE9113499U1 (de) * | 1991-09-11 | 1992-04-30 | Export-Contor Außenhandelsgesellschaft mbH, 8500 Nürnberg | Elektronische Schaltung |
JPH05166969A (ja) * | 1991-10-14 | 1993-07-02 | Fuji Electric Co Ltd | 半導体装置 |
US5161090A (en) * | 1991-12-13 | 1992-11-03 | Hewlett-Packard Company | Heat pipe-electrical interconnect integration for chip modules |
DE4244721A1 (de) * | 1992-05-25 | 1994-04-21 | Mannesmann Ag | Elektrische Maschine mit fluidgekühlten Halbleiterelementen |
JP2838625B2 (ja) * | 1992-09-08 | 1998-12-16 | 株式会社日立製作所 | 半導体モジュール |
JPH06233554A (ja) * | 1993-01-28 | 1994-08-19 | Fuji Electric Co Ltd | インバータ装置 |
US5444295A (en) * | 1993-09-07 | 1995-08-22 | Delco Electronics Corp. | Linear dual switch module |
US5408128A (en) * | 1993-09-15 | 1995-04-18 | International Rectifier Corporation | High power semiconductor device module with low thermal resistance and simplified manufacturing |
-
1994
- 1994-06-17 DE DE4421319A patent/DE4421319A1/de not_active Withdrawn
-
1995
- 1995-05-05 US US08/435,617 patent/US5574312A/en not_active Expired - Fee Related
- 1995-06-01 DE DE59504782T patent/DE59504782D1/de not_active Expired - Fee Related
- 1995-06-01 EP EP95201442A patent/EP0688053B1/de not_active Expired - Lifetime
- 1995-06-07 JP JP7140776A patent/JPH088397A/ja active Pending
- 1995-06-16 CN CN95107021A patent/CN1120737A/zh active Pending
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CN103840677B (zh) * | 2012-11-21 | 2017-06-20 | 株式会社日立制作所 | 功率变换装置 |
CN104425409A (zh) * | 2013-09-05 | 2015-03-18 | 三菱电机株式会社 | 半导体装置 |
CN104425409B (zh) * | 2013-09-05 | 2017-06-20 | 三菱电机株式会社 | 半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
EP0688053A1 (de) | 1995-12-20 |
EP0688053B1 (de) | 1999-01-13 |
US5574312A (en) | 1996-11-12 |
JPH088397A (ja) | 1996-01-12 |
DE59504782D1 (de) | 1999-02-25 |
DE4421319A1 (de) | 1995-12-21 |
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