CN111952252B - Surface-mounted type ceramic metal shell's low resistance high current-carrying lead structure - Google Patents

Surface-mounted type ceramic metal shell's low resistance high current-carrying lead structure Download PDF

Info

Publication number
CN111952252B
CN111952252B CN202010677664.7A CN202010677664A CN111952252B CN 111952252 B CN111952252 B CN 111952252B CN 202010677664 A CN202010677664 A CN 202010677664A CN 111952252 B CN111952252 B CN 111952252B
Authority
CN
China
Prior art keywords
lead
ceramic
low resistance
high current
ceramic shell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010677664.7A
Other languages
Chinese (zh)
Other versions
CN111952252A (en
Inventor
郑学军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qingdao Kairui Electronics Co ltd
Original Assignee
Qingdao Kairui Electronics Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qingdao Kairui Electronics Co ltd filed Critical Qingdao Kairui Electronics Co ltd
Priority to CN202010677664.7A priority Critical patent/CN111952252B/en
Publication of CN111952252A publication Critical patent/CN111952252A/en
Priority to PCT/CN2021/077169 priority patent/WO2022012045A1/en
Application granted granted Critical
Publication of CN111952252B publication Critical patent/CN111952252B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/06Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Products (AREA)

Abstract

The invention relates to a low-resistance high-current-carrying lead structure of a surface-mounted ceramic metal shell. Including ceramic package, sealing ring, interior bonding piece, wall lead wire, outer lead wire and heat sink boss, a side of ceramic package sets up the wall lead wire, and heat sink boss sets up in the bottom of ceramic package, and interior bonding piece sets up the wall lead wire at ceramic package internal connection, and the sealing ring sets up around the upper portion of ceramic package, and the sealing ring is connected with ceramic package brazing. Said ceramic shell is 95% Al 2 O 3 . The outer lead is of an integrated structure and made of a kovar copper-clad material, the 4J29 material is covered with oxygen-free copper, and the thickness of the oxygen-free copper is 0.15mm. The welding position of the outer lead is in a 7-shaped structure, burrs are removed by a magnetic grinding machine, then deionized water is adopted for cleaning for 3 times, 10% hydrochloric acid is used for cleaning, and after 3 times of cleaning, the outer lead is dried for 60 minutes at 110 ℃. The design of the invention realizes the low resistance design of the lead by kovar copper, oxygen-free copper and CMC structure, and the resistance of the lead meets less than or equal to 2m omega.

Description

Surface-mounted type ceramic metal shell's low resistance high current-carrying lead structure
Technical Field
The invention relates to a low-resistance high-current-carrying lead structure of a surface-mounted ceramic metal shell.
Background
The low lead wire resistive surface mount type ceramic package series is used for surface mounting type power device package, and is generally used in low lead wire linear voltage stabilizer for supplying voltage in electronic system. Because the output voltage or load of the linear voltage stabilizer responds more quickly than the switching voltage stabilizer, the ripple and noise of the output voltage are lower, the circuit structure is simpler, the volume is smaller, and the linear voltage stabilizer is widely used in various portable systems powered by batteries and communication related electronic products. However, the products on the market can not reach the military grade at present, so that a low-resistance high-current-carrying ceramic metal shell meeting the military standard is urgently needed.
Disclosure of Invention
To solve the problems mentioned in the background art, the present invention discloses a low resistance high current carrying lead structure of a surface-mounted ceramic metal case.
In order to achieve the above purpose, the following technical solutions are provided:
the utility model provides a table pastes high current-carrying lead wire structure of low resistance of type ceramic metal casing, includes ceramic package, sealing ring, interior bonding piece, wall lead wire, outer lead wire and heat sink boss, a side of ceramic package sets up the wall lead wire, and heat sink boss sets up in the bottom of ceramic package, and interior bonding piece sets up at ceramic package internal connection wall lead wire, and the sealing ring sets up around the upper portion of ceramic package, and the sealing ring is connected with ceramic package brazing.
Further, the ceramic shell is 95% 2 O 3
Furthermore, the outer lead is of an integrated structure and is made of Kovar copper-clad material, oxygen-free copper is coated on the 4J29 material, and the thickness of the oxygen-free copper is 0.15mm.
Further, the welding position of the outer lead is in a 7-shaped structure, burrs are removed by a magnetic grinding machine, then deionized water is adopted for cleaning for 3 times, 10% hydrochloric acid is used for filtering, after cleaning for 3 times, drying is carried out for 60 minutes at 110 ℃.
Furthermore, the welding area of the outer lead and the ceramic shell is not less than 0.8mm 2 The outer lead and the ceramic shell are metalized at the welding position, the solder extends outwards at the position during sintering, the sealing strength of the outer lead and the ceramic shell is increased, the ceramic shell is placed in a sintering mold during the sintering process of the lead and the ceramic, and a gravity pressing block is placed on the lead to prevent the lead from warping during the brazing process.
Furthermore, the wall lead is made of an oxygen-free copper material.
Furthermore, the inner bonding sheet is made of a flat composite material with a CMC sandwich structure, pure molybdenum is adopted in the middle, and oxygen-free copper is coated on two sides.
Furthermore, the peripheral outer edge of the sealing ring is 0.20mm smaller than the outer edge of the ceramic shell, meanwhile, the sealing surface of the ceramic shell is chamfered, and the sealing ring and the ceramic shell are brazed and connected in a parallel seam welding mode.
Furthermore, the heat sink boss is back-gouged, and the peripheral gap between the heat sink boss and the ceramic shell is set to be 0.1mm.
The invention has the beneficial effects that:
1. the low-resistance high-current-carrying lead structure of the surface-mounted ceramic metal shell realizes the low-resistance design of the lead through the Kovar copper, oxygen-free copper and CMC structures, and the lead resistance meets the requirement of less than or equal to 2m omega.
2. According to the low-resistance high-current-carrying lead structure of the surface-mounted ceramic metal shell, the sealing strength is improved due to the fact that the chamfer angle is designed at the position between the ceramic shell and the sealing ring, and meanwhile the problem that the edge of a ceramic piece is broken off and the air tightness is affected when a cover is sealed in a parallel seam welding mode is solved.
3. According to the low-resistance high-current-carrying lead structure of the surface-mounted ceramic metal shell, the heat sink part adopts the step structure, so that the welding stress of the sealing part is reduced, and the mechanical strength of the heat sink is ensured.
Drawings
FIG. 1 is a schematic cross-sectional front view of a low resistance, high current carrying lead configuration for a surface mount ceramic-metal housing;
FIG. 2 is a side cross-sectional view of a low resistance, high current carrying lead configuration of a surface mount cermet package;
FIG. 3 is a bottom view of a low resistance, high current carrying lead configuration of a surface mount cermet package;
FIG. 4 is a top view of a low resistance, high current carrying lead configuration of a surface mount cermet package;
FIG. 5 is a die set-up view during soldering of a low resistance, high current carrying lead configuration of a surface mount ceramic metal housing;
FIG. 6 is a CMC sandwich construction drawing of a low resistance high current carrying lead structure of a surface mount ceramic metal can;
FIG. 7 is a front and top view of a heat sink boss of a low resistance high current carrying lead configuration of a surface mount ceramic metal housing;
FIG. 8 is a top view of 5 outer leads of a low resistance, high current carrying lead configuration of a surface mount ceramic metal housing;
FIG. 9 is a side cross-sectional view of a low resistance, high current carrying lead configuration of 5 outer leads soldered to a ceramic package of a surface mount ceramic-to-metal package;
fig. 10 is a comparison of lead resistance data in m Ω for a low resistance package lead and a conventional package for a low resistance, high current carrying lead configuration of a surface mounted ceramic metal package in table 1.
Fig. 11 is a comparison of lead resistance data in m Ω for a low resistance case lead and a conventional case for a low resistance high current carrying lead configuration of a surface mount ceramic metal case of table 2.
Wherein: 1. a ceramic housing; 11. chamfering the sealing surface of the ceramic shell by 0.20 multiplied by 45 degrees; 12. side metallization; 13. back metallization; 2. a heat sink boss; 3. a seal ring; 31. a solder tensile angle; 4. an outer lead; 41. 4J29 material; 42. oxygen-free copper; 43. the welding position of the outer lead and the ceramic shell; 44. extending solder at the outer lead; 5. a wall lead is penetrated; 6. an inner bonding tab; 7. sintering the mold; 8. and (7) gravity briquetting.
Detailed Description
In order to make the technical solution of the present invention more clear and definite for those skilled in the art, the technical solution of the present invention is described in detail below with reference to the accompanying drawings, but the embodiments of the present invention are not limited thereto.
As shown in fig. 1 to 11, a low-resistance high-current-carrying lead structure of a surface-mounted ceramic metal case includes a ceramic case 1, a sealing ring 3, an inner bonding sheet 6, a wall lead 5, an outer lead 4 and a heat sink boss 2, wherein the wall lead 5 is arranged on one side surface of the ceramic case 1, and the wall lead is made of TU1 material, i.e., oxygen-free copper material. The heat sink boss 2 is arranged at the bottom of the ceramic shell 1, the inner bonding sheet 6 is arranged at the inner part of the ceramic shell 1 and connected with the wall lead 5, the sealing ring 3 is arranged around the upper part of the ceramic shell 1, and the sealing ring 3 is connected with the ceramic shell 1 in a brazing mode. The ceramic shell 1 adopts 95% 2 O 3
Design of the 2m Ω on-resistance outer lead 4:
when the material of the outer lead 4 is selected, the suitable material is finally determined for lead design through calculation comparison of the possibly suitable material. The calculation formula is as follows:
Figure BDA0002584609850000031
wherein R is Material Represents the material resistance, Ω; ρ represents the resistivity of the material, Ω · m; l represents the length of the lead wire,m; s represents a cross-sectional area of the lead wire, m 2
Figure BDA0002584609850000041
Wherein, delta L represents the length variable quantity of the lead in the process from T1 to T2, mm; α represents the linear expansion coefficient of the material,/° c; l represents lead length, mm; t1 and T2 represent the starting and ending temperatures in degrees centigrade, respectively.
The outer lead 4 is of an integrated structure and is made of Kovar copper-clad material, oxygen-free copper 42 is covered on the 4J29 material 41, the thickness of the oxygen-free copper is 0.15mm, the Kovar copper-clad material is pressed at high temperature, the Kovar copper-clad material is formed by atomic combination of the two materials, and the reliability is high. The welding position of the outer lead 4 is in a 7-shaped structure, namely the welding position 43 of the outer lead 4 and the ceramic shell 1 is in a 7-shaped structure. The outer lead 4 is deburred by a magnetic grinder, then washed by deionized water for 3 times, filtered by 10% hydrochloric acid, washed for 3 times and dried for 60 minutes at 110 ℃.
The welding area of the outer lead 4 and the ceramic shell 1 is not less than 0.8mm 2 The side face metallization 12 is carried out on the welding part 43 of the outer lead 4 and the ceramic shell 1, meanwhile, the back face metallization 13 is carried out on the back face of the ceramic shell 1, the solder extends outwards at the position during sintering, namely the solder extending outwards 44 at the position of the outer lead 4, the sealing strength of the outer lead 4 and the ceramic shell 1 is improved, in the process of sintering the lead and the ceramic, the ceramic shell 1 is placed in a sintering mold 7, and a gravity pressing block 8 is placed on the lead to prevent the lead from warping in the process of brazing.
The inner bonding sheet 6 is made of a flat composite material with a CMC sandwich structure, pure molybdenum is adopted in the middle, and oxygen-free copper is coated on two sides. The peripheral outer edge of the sealing ring 3 is smaller than the outer edge of the ceramic shell 1 by 0.20mm, meanwhile, the sealing surface of the ceramic shell 1 is chamfered by 0.20 multiplied by 45 degrees 11, the sealing ring 3 and the ceramic shell 1 are connected in a brazing mode in a parallel seam welding mode, the sealing ring 3 is formed at the sealing position, a solder extension, a ceramic R0.30 and a sealing ring 3 fillet R0.80 form a solder tensile angle 31, and the welding strength of the sealing ring 3 and the ceramic shell is enhanced.
The heat sink boss 2 is back-gouged, and the gap between the heat sink boss 2 and the periphery of the ceramic shell 1 is set to be 0.1mm. And enough expansion allowance of the tungsten-copper heat sink is reserved, so that the sealing stress is reduced, and the air tightness of the shell is ensured. By adopting a large fillet structure, the 4 inner fillets are 0.50mm, the outer fillet is 1.00mm, and the stress concentration at the fillet in the brazing process is effectively prevented. The heat sink adopts the way that the linear expansion coefficients of W85Cu15 and the ceramic piece are not completely matched or sealing stress exists, the W85Cu15 heat sink and the ceramic piece are in plane sealing, the sealing stress is in direct proportion to the thickness of the W85Cu15 heat sink, namely P is in direct proportion to delta, and delta is the thickness of the W85Cu15 heat sink. If the W85Cu15 heat sink is too thick, the package reliability may be affected by too much sealing stress. The W85Cu15 heatsink is too thin and can cause cracking of the user chip due to deformation when tested in the Y1, Y2 directions at constant acceleration. The invention can reduce the welding stress of the sealing part and ensure the mechanical strength of the heat sink by adopting the step structure. The size of the sealing part is controlled between 0.30 mm and 0.40mm, and the total thickness is controlled between 0.70 mm and 0.80 mm.
While the invention has been described with respect to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (8)

1. The utility model provides a low resistance high current-carrying lead structure of surface mounted type ceramic metal casing which characterized in that: the ceramic heat sink comprises a ceramic shell, a sealing ring, an inner bonding sheet, a through-wall lead, an outer lead and a heat sink boss, wherein the through-wall lead is arranged on one side surface of the ceramic shell;
the peripheral outer edge of the sealing ring is 0.20mm smaller than the outer edge of the ceramic shell, meanwhile, the sealing surface of the ceramic shell is chamfered, and the sealing ring and the ceramic shell are brazed and connected in a parallel seam welding mode.
2. The surface-mounted ceramic-metal housing of claim 1The low-resistance high-current-carrying lead structure is characterized in that: the ceramic shell adopts 95 percent of Al 2 O 3
3. The low resistance, high current carrying lead structure of a surface mount ceramic metal housing of claim 1, wherein: the outer lead is of an integrated structure and made of a kovar copper-clad material, the 4J29 material is covered with oxygen-free copper, and the thickness of the oxygen-free copper is 0.15mm.
4. The low resistance, high current carrying lead structure of a surface mount ceramic metal housing of claim 3, wherein: the welding position of the outer lead is in a 7-shaped structure, burrs of the outer lead are removed by a magnetic grinding machine, then the outer lead is cleaned for 3 times by deionized water, and then cleaned for 3 times by 10% hydrochloric acid and dried for 60 minutes at 110 ℃.
5. The low resistance high current carrying lead structure of a surface mounted ceramic metal case of claim 4, wherein: the welding area of the outer lead and the ceramic shell is not less than 0.8mm 2 The outer lead and the ceramic shell are metalized at the welding position, the solder extends outwards at the position during sintering, the sealing strength of the outer lead and the ceramic shell is increased, the ceramic shell is placed in a sintering mold during the sintering process of the lead and the ceramic, and a gravity pressing block is placed on the lead to prevent the lead from warping during the brazing process.
6. The low resistance, high current carrying lead structure of a surface mount ceramic metal housing of claim 1, wherein: the wall lead is made of an oxygen-free copper material.
7. The low resistance, high current carrying lead structure of a surface mount ceramic metal housing of claim 1, wherein: the inner bonding sheet is made of a flat composite material with a CMC sandwich structure, pure molybdenum is adopted in the middle, and oxygen-free copper is coated on two sides.
8. The low resistance, high current carrying lead structure of a surface mount ceramic metal housing of claim 1, wherein: the heat sink boss is back-gouged, and the gap between the heat sink boss and the periphery of the ceramic shell is set to be 0.1mm.
CN202010677664.7A 2020-07-15 2020-07-15 Surface-mounted type ceramic metal shell's low resistance high current-carrying lead structure Active CN111952252B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202010677664.7A CN111952252B (en) 2020-07-15 2020-07-15 Surface-mounted type ceramic metal shell's low resistance high current-carrying lead structure
PCT/CN2021/077169 WO2022012045A1 (en) 2020-07-15 2021-02-22 Low-resistance high-current-carrying lead structure of surface-mounted ceramic metal housing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010677664.7A CN111952252B (en) 2020-07-15 2020-07-15 Surface-mounted type ceramic metal shell's low resistance high current-carrying lead structure

Publications (2)

Publication Number Publication Date
CN111952252A CN111952252A (en) 2020-11-17
CN111952252B true CN111952252B (en) 2023-03-10

Family

ID=73340585

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010677664.7A Active CN111952252B (en) 2020-07-15 2020-07-15 Surface-mounted type ceramic metal shell's low resistance high current-carrying lead structure

Country Status (2)

Country Link
CN (1) CN111952252B (en)
WO (1) WO2022012045A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111952252B (en) * 2020-07-15 2023-03-10 青岛凯瑞电子有限公司 Surface-mounted type ceramic metal shell's low resistance high current-carrying lead structure
CN115312606A (en) * 2022-07-29 2022-11-08 中国电子科技集团公司第五十五研究所 Refrigeration-based infrared detector ceramic Dewar packaging shell structure and manufacturing method
CN115602637B (en) * 2022-11-02 2023-06-02 浙江东瓷科技有限公司 Metal ceramic shell for replacing SOP-08 pure ceramic package and preparation method thereof

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN200956368Y (en) * 2006-06-16 2007-10-03 无锡天和电子有限公司 Mounted package casing for semiconductor power device
CN201153355Y (en) * 2008-01-23 2008-11-19 安徽华东光电技术研究所 Miniature pin sealing construction of ceramic body
CN204030267U (en) * 2014-09-02 2014-12-17 河北中瓷电子科技有限公司 Semiconductor laser ceramic package lead-in wire vertical welding structure
CN105374759A (en) * 2015-11-26 2016-03-02 中国电子科技集团公司第十三研究所 Ceramic quadrilateral leadless flat packaging shell used for integrated circuit packaging
CN107452723A (en) * 2017-07-26 2017-12-08 济南市半导体元件实验所 A kind of high-power silicon carbide schottky rectifier bridge and preparation method thereof
CN108231698A (en) * 2017-12-29 2018-06-29 中国电子科技集团公司第十三研究所 Ceramic pad array shell
CN207624677U (en) * 2017-12-29 2018-07-17 中国电子科技集团公司第十三研究所 Ceramic pad array shell
CN207818563U (en) * 2018-02-23 2018-09-04 河北中瓷电子科技有限公司 High power transistor package casing lead
CN210837715U (en) * 2019-10-31 2020-06-23 中国电子科技集团公司第十三研究所 Surface-mounted dual in-line ceramic shell and power device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294592A (en) * 2007-05-23 2008-12-04 Nippon Dempa Kogyo Co Ltd Piezoelectric device for surface mounting
CN103500737B (en) * 2013-10-24 2017-01-18 中国兵器工业集团第二一四研究所苏州研发中心 Overload-resistant integral LCC (Leadless Chip Carrier) package based on LTCC (Low Temperature Co-Fired Ceramic) substrate
CN208637408U (en) * 2018-08-23 2019-03-22 河北中瓷电子科技有限公司 Ceramic package shell
CN111952252B (en) * 2020-07-15 2023-03-10 青岛凯瑞电子有限公司 Surface-mounted type ceramic metal shell's low resistance high current-carrying lead structure

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN200956368Y (en) * 2006-06-16 2007-10-03 无锡天和电子有限公司 Mounted package casing for semiconductor power device
CN201153355Y (en) * 2008-01-23 2008-11-19 安徽华东光电技术研究所 Miniature pin sealing construction of ceramic body
CN204030267U (en) * 2014-09-02 2014-12-17 河北中瓷电子科技有限公司 Semiconductor laser ceramic package lead-in wire vertical welding structure
CN105374759A (en) * 2015-11-26 2016-03-02 中国电子科技集团公司第十三研究所 Ceramic quadrilateral leadless flat packaging shell used for integrated circuit packaging
CN107452723A (en) * 2017-07-26 2017-12-08 济南市半导体元件实验所 A kind of high-power silicon carbide schottky rectifier bridge and preparation method thereof
CN108231698A (en) * 2017-12-29 2018-06-29 中国电子科技集团公司第十三研究所 Ceramic pad array shell
CN207624677U (en) * 2017-12-29 2018-07-17 中国电子科技集团公司第十三研究所 Ceramic pad array shell
CN207818563U (en) * 2018-02-23 2018-09-04 河北中瓷电子科技有限公司 High power transistor package casing lead
CN210837715U (en) * 2019-10-31 2020-06-23 中国电子科技集团公司第十三研究所 Surface-mounted dual in-line ceramic shell and power device

Also Published As

Publication number Publication date
WO2022012045A1 (en) 2022-01-20
CN111952252A (en) 2020-11-17

Similar Documents

Publication Publication Date Title
CN111952252B (en) Surface-mounted type ceramic metal shell's low resistance high current-carrying lead structure
JP2004227959A (en) Nonaqueous electrolyte battery and electric double layer capacitor
JP2004055889A (en) Solid electrolytic capacitor
JP2019186326A (en) Semiconductor device and manufacturing method of the same
CN108417501B (en) Power module and preparation method thereof
JP2014017483A (en) Power semiconductor module having at least one conforming element reducing stress
JP4124040B2 (en) Semiconductor device
CN202758689U (en) Thick-film super-power planar resistor of composite base plate
JP6997690B2 (en) Power module
JP7018756B2 (en) Power module board and power module
CN106415827A (en) Semiconductor module integrated with cooling device
CN215815842U (en) Double-sided cooling power module capable of improving module installation reliability
CN112038245B (en) Connection process of internal binding line of power module
CN212084994U (en) Parallel packaged device group
CN112018058B (en) Power inverter module and manufacturing method thereof
CN106413377A (en) Integrated welding method for surface-mounted power device
CN209626638U (en) A kind of 400W laser list pumping source ceramic package shell
CN113539974A (en) Chip packaging shell and brazing process thereof
CN112736042A (en) Double-sided water-cooled power module
CN200956368Y (en) Mounted package casing for semiconductor power device
CN105338734B (en) Ceramic substrate circuit board and its manufacturing method
CN221352745U (en) Special-shaped deep space cavity CSMD ceramic tube shell
CN213583770U (en) Semiconductor discrete device packaging structure
CN205491441U (en) ceramic substrate circuit board
CN219107784U (en) Ceramic copper-clad substrate structure with high thermal cycle capability

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant