CN111696887A - 基板处理装置、半导体装置的制造方法及记录介质 - Google Patents
基板处理装置、半导体装置的制造方法及记录介质 Download PDFInfo
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- CN111696887A CN111696887A CN201911357253.3A CN201911357253A CN111696887A CN 111696887 A CN111696887 A CN 111696887A CN 201911357253 A CN201911357253 A CN 201911357253A CN 111696887 A CN111696887 A CN 111696887A
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Abstract
本发明能够实现壳体内的氧浓度降低和移载室稳定的压力控制。本发明技术包括:对搭载于舟皿的基板进行处理的处理室;将基板移载至舟皿的移载室;与移载室邻接的晶片盒搬送室;设于晶片盒搬送室的搬送室***排气部;沿着构成搬送室的壳体的壁设置的加强构造,其与壁之间形成第一封入空间;以使壳体内的空间与第一封入空间连通的方式设于加强构造的连通孔;在壳体内与多个加强构造连接的集合管,其具有与多个第一封入空间连通的第二封入空间;向构成移载室的壳体内供给非活性气体的非活性气体供给部;及在晶片盒搬送室与集合管连接的压力调整部,其调整为移载室的压力>第一封入空间的压力>第二封入空间的压力>晶片盒搬送室的压力。
Description
技术领域
本发明涉及对半导体基板等基板实施例如热处理等处理的基板处理装置。
背景技术
在IC的制造工序中,为了进行在基板上形成绝缘膜、金属膜、半导体膜等或使杂质扩散等热处理,例如使用将多张基板搭载于舟皿并针对多张基板同时进行批量处理的纵型处理装置。
该纵型处理装置包括对搭载于舟皿的多张基板进行处理的处理室和在处理前将基板向舟皿移载的移载室。已有下述技术:通过作为非活性气体在移载室中例如充满氮气,而使移载室内的氧浓度下降以将基板与氧气隔开,抑制在基板上形成自然氧化膜(参见专利文献1)。
但是,在以往的纵型处理装置中,若要降低移载室内的氧浓度则移载室的压力控制变得不稳定,这在提高装置吞吐量的基础上成为另一课题。
现有技术文献
专利文献
专利文献1:WO2014/050464
发明内容
本公开的目的在于提供一种实现壳体内的氧浓度降低和移载室的稳定压力控制的技术。
提供如下的技术,该技术包括:处理室,其对搭载于舟皿的基板进行处理;移载室,其将所述基板移载至所述舟皿;晶片盒搬送室,其与所述移载室邻接;搬送室***排气部,其设置于所述晶片盒搬送室;加强构造,其沿着构成所述搬送室的壳体的壁设置,在与所述壁之间形成第一封入空间;连通孔,其以使所述壳体内的空间与所述第一封入空间连通的方式设置于所述加强构造;集合管,其在所述壳体内与多个加强构造连接,并具有与多个所述第一封入空间连通的第二封入空间;非活性气体供给部,其向构成所述移载室的壳体内供给非活性气体;以及压力调整部,其在所述晶片盒搬送室中与所述集合管连接,以成为所述移载室的压力>所述第一封入空间的压力>所述第二封入空间的压力>所述晶片盒搬送室的压力的方式进行调整。
发明效果
根据本公开,能够实现壳体内的氧浓度降低和移载室稳定的压力控制。
附图说明
图1是基板处理装置的立体图。
图2是基板处理装置的垂直剖视图。
图3是说明加强构造的图。
图4是说明加强构造的图。
图5是说明加强构造和压力调整部的图。
图6是说明加强构造和压力调整部的图。
图7是说明压力调整部的图。
图8是说明处理炉的图。
图9是说明控制器的图。
图10是说明压力调整部的图。
附图标记说明如下:
100 基板处理装置
124 移载室
126 晶片盒搬送室
132 排气部
134 清洁单元
141 加强构造
144 封入空间
151 集合管
152 封入空间
160 压力调整部
200 基板
202 处理炉
217 舟皿
具体实施方式
(第一实施方式)
参照附图说明第一实施方式中的基板处理装置。在本实施方式中,基板处理装置作为一例,构成为实施半导体装置(IC:Integrated Circuit)的制造方法中的处理工序的半导体制造装置。图1是处理装置的透视图,采用立体图示出。另外,图2是图1所示的处理装置的侧面透视图。图3至图7是说明移载室的加强构造的详细的说明图。图8是说明对基板处理装置进行控制的控制器的说明图。图9是说明处理炉202的详细的说明图。
基板处理装置100作为用于收纳由硅等构成的基板200的基板载体使用晶片盒110,并具有壳体111。在壳体111的正面壁111a上,以使壳体111的内外连通的方式开设有晶片盒搬入搬出口112,晶片盒搬入搬出口112通过前闸门113而开闭。在晶片盒搬入搬出口112的正面前方侧设置装载端口114,装载端口114载置晶片盒110。晶片盒110通过工序内搬送装置(未图示)搬入到装载端口114上且从装载端口114上搬出。
在壳体111内的前后方向的大致中央部的上部设置有旋转架105,旋转架105以支柱116为中心旋转,在架板117上保管多个晶片盒110。
在壳体111内的装载端口114与旋转架105之间设置有晶片盒搬送装置118。晶片盒搬送装置118由能够以保持晶片盒110的状态升降的晶片盒升降机118a和作为水平搬送机构的晶片盒搬送机构118b构成,在装载端口114、旋转架105、晶片盒开启器121之间进行晶片盒110的搬送。将配置有晶片盒搬送装置118的小室称为晶片盒搬送室126。
在壳体111的顶部设有清洁气体单元131。从清洁气体单元131供给净化了的非活性气体即清洁气体,抑制壳体111内的粉尘飞散。在壳体111的底部设置排气部132。排气部132也称为搬送室***排气部。对从清洁气体单元131供给的非活性气体、后述的封入空间的环境气体进行排气。
在壳体111内的前后方向的大致中央部的下部,在整个后端范围内构建有副壳体119。在副壳体119的正面壁119a上,以沿垂直方向上下排列成两层的方式开设有一对用于将基板200向副壳体119内搬入搬出的基板搬入搬出口120,分别在上下层的基板搬入搬出口120设置的一对晶片盒开启器121。
晶片盒开启器121包括载置晶片盒110的载置台122和对晶片盒110的盖(盖体)进行装卸的盖装卸机构123。晶片盒开启器121通过盖装卸机构123对载置于载置台122的晶片盒110的盖进行装卸,从而使晶片盒110的基板出入口开闭。载置台122是在移载基板时供基板收容器载置的移载架。
如图1所示,副壳体119构成与晶片盒搬送装置118、旋转架105的设置空间的环境气体隔绝的移载室124。在移载室124内的前侧区域设置有将收容在晶片盒110中的基板向作为基板保持件的舟皿217移载的基板移载机构125。基板移载机构125构成作为基板移载机构的基板移载机。基板移载机构125由将基板200载置于镊钳125c并能够在水平方向上旋转或平移的基板移载装置125a以及用于使基板移载装置125a升降的基板移载装置升降机125b构成。通过该基板移载装置升降机125b及基板移载装置125a的连续动作,将基板200向舟皿217装填及卸除。
为了向移载室124内供给清净化了的非活性气体即清洁气体133,设置有由供给风扇及防尘过滤器构成的清洁单元134。清洁单元134也称为非活性气体供给部或移载室***非活性气体供给部。
清洁单元134构成向移载室124供给非活性气体的非活性气体供给部。另外,在移载室124中设有将移载室124内的环境气体向移载室124外排出的排气部127。排气部127构成为,使向移载室124外排出的环境气体的一部分返回清洁单元134以进行循环,将其余部分向基板处理装置100外排出。排气部127也称为移载室***排气部。
如图2所示,在舟皿217的上方设有处理炉202。处理炉202在内部具有后述的反应管201,在反应管201的周围具有对反应管201内进行加热的加热器211。处理炉202的下端部通过炉口盖147开闭。处理炉202的详细内容在后面说明。
如图1所示,在移载室124内设置有用于使舟皿217升降的舟皿升降机115。舟皿升降机115构成作为基板保持件搬送机构的基板保持件(舟皿)搬送机。在与舟皿升降机115连结的臂部128上水平安装有密封盖219,密封盖219构成为垂直地支承舟皿217并能够将盖处理炉202的下端部密封。
舟皿217具有多根保持构件,构成为将多张(例如50张~125张左右)基板200分别以其中心对齐并沿垂直方向排列的状态水平保持。
另外,本实施方式的基板处理装置100具有作为控制机构的控制器300(后述)。控制器300构成为对基板处理装置100整体进行控制,例如进行针对基板处理装置100中的处理炉202的气体流量控制、处理炉202内的压力控制、处理炉202的加热器的温度控制、舟皿升降机115、基板移载机构125等的驱动控制等。
接下来,使用图3至图7说明本实施方式中的加强构造及其周围的构造。此外,图3至图6中的α、α’表示图1的α方向、α’方向。
副壳体119如上所述构成移载室124。移载室124在本实施方式中与反应炉202邻接。移载室124是在舟皿217与晶片盒110之间移载基板200的移载室,也是用于将搭载有基板200的舟皿217向处理室搬入并从处理室搬出的搬送室。移载室124成为用于防止在基板200上形成自然氧化膜的密闭空间,是由非活性气体例如氮气(N2)充满的构造。因此,副壳体119构建为保持在比大气压高50Pa左右的正压的气密构造。
移载室124由于内置有舟皿217、清洁气体单元134、基板移载装置215等而容积变大,但为了使其加重轻量化而采用将不锈钢等板材组合而成的构造。因此,在移载室124的壁上设有加强构造141。
在此,使用图3、图4、图5、图6说明加强构造141。图3是图2的虚线α-α’处的横剖视图。此外,为便于说明而省略清洁气体单元134等的构成。图4是以立体图方式表现图3的切口的图。图5、图6是示出移载室124的侧壁整体及其周围的构造的图。
加强构造141沿着移载室124的壁140配置有多个。配置的位置、数量也可以与其他配置的部件、移载室124的强度相关联而适当调整。在图3、图4中,作为一例将两个加强构造141沿壁140配置。如图5所示,加强构造141在移载室124的侧方的壁140中以沿垂直方向延伸的方式配置。
在移载室124中,如图6所示,在加强构造141的上方还设有集合管151。集合管151沿着图5中的上壁140a设置,并以沿水平方向延伸的方式配置。此外,在图6中,为了便于说明而示出一个加强构造141,但集合管151也可以与其他加强构造141连接。通过按照这种方式配置,从而提高移载室124的强度。
加强构造141为了确保强度而具有“コ”字状的主构造142和凸缘143。通过将凸缘143焊接于壁140,而使加强构造141固定于壁140。在主构造142与壁140之间形成有封入空间144。封入空间144也称为第一封入空间。在主构造142上设有连通孔145,使封入空间144与移载室124内的空间连通。
封入空间144与集合管151内的封入空间153连通。集合管151由例如内部为空洞的筒状构造152构成。将筒状构造152的内部的空洞称为封入空间153,封入空间153与封入空间144连通。封入空间153也称为第二封入空间。此外,也可以使用与加强构造141相同的主构造、凸缘作为加强构造。
然而,如前所述需要将移载室124内的氧成分去除。例如,希望将移载室124内的氧浓度设为3ppm以下。
氧成分的大部分被从清洁单元134供给的清洁气体133去除。然而,存在封入空间144、封入空间153中的氧成分难以去除的问题。这是由于,封入空间144由主构造142覆盖,封入空间153由筒状构造152覆盖,清洁气体133难以到达各空间。因此,为了使氧成分达到希望浓度以下,需要花费大量时间。
另外,作为降低氧浓度的另一方法,还考虑将封入空间144与移载室124的空间、封入空间152与移载室124的空间完全隔离。但是,由于凸缘143仅是焊接于壁140,所以存在氧气从各封入空间经由焊接部分侵入移载室123从而导致结果为移载室124的氧浓度变高的问题。因此,即使欲通过焊接隔离也难以降低氧浓度。
此外,如专利文献1所示,也考虑使泵与封入空间144连通的方法。但是,虽然能够很快使氧成分浓度成为希望值以下,但移载室124中的环境气体也在泵的作用下经由封入空间144被快速排气,存在移载室124的压力调整变得困难的问题。此外,存在清洁气体133变为垂直流动而白白消耗的问题。
因此,在本技术中,如图5、图6所示,设置对封入空间144、封入空间153的压力进行控制的压力调整部160。以下说明其详细内容。
如图5、图6所示,在加强构造141的下方设有贯通孔145。加强构造141的上端与集合管151连接,封入空间144与封入空间153连通。如后所述,移载室124中的非活性气体从移载室经由加强构造141、集合管151、压力调整部160向晶片盒搬送室126移动。即,贯通孔145设置在加强构造141中的非活性气体流的上游侧。
集合管151沿着上壁140a在晶片盒搬送室126方向上延伸。在晶片盒搬送室126设有压力调整部160,集合管151与压力调整部160连接。由此,封入空间153与压力调整部160内的缓冲空间161连通。在压力调整部160设有连通孔162。
如图5、图7所示,在压力调整部160设有压力调整构造163。压力调整构造163是在内部具有空间的箱状构造。压力调整构造163的内部空间经由连通孔162与缓冲空间161连通。
在压力调整构造163设有孔165,使压力调整构造163的内部空间与晶片盒搬送室126的环境气体连通。在孔165的附近设有滑动式的盖部166,构成为能够控制孔165的开度。
通过对孔165的开度进行控制,按照“移载室124的压力>封入空间144的压力>封入空间152的压力>晶片盒搬送室126的压力”的方式,调整为压力随着趋向下游而分级下降。在此,由于没有直接连接泵这样使压力急剧下降的装置而进行应对,所以能够实现平缓的压力梯度。因此能够将第一封入空间及第二封入空间的压力维持为规定值。因此,与之连通的移载室124的压力调整变得容易。
另外,由于与晶片盒搬送室126的环境气体连通,因此各封入空间内的氧成分被从排气部132排出。即,能够在基板处理装置100的内部完成排气处理。由于移载室124的环境气体不会向基板处理装置100的外部排出,因此能够更加可靠地确保在基板处理装置100的周围停留的人的安全性。
(处理炉)
接下来,使用图8说明上述处理炉202的详细。图8是示出基板处理装置使用的处理炉的构成例的纵剖视图。
处理炉202具有由反应管构成的反应管201。反应管201由例如石英(SiO2)、碳化硅(SiC)等具有耐热性的非金属材料构成,成为上端部闭塞且下端部开放的圆筒形状。下端部由歧管205支承。将在反应管201和歧管205的内侧构成的空间称为处理空间203。另外,将反应管201与歧管205一并称为处理室。
在歧管205形成有炉口。炉口是在舟皿217被向处理空间203***时通过的进出口。将歧管、炉口等一并称为炉口部。
在处理空间203中以沿铅垂方向排列成多层的状态收容由舟皿217以水平姿态支承的基板200。收容在处理空间203中的舟皿217通过利用旋转机构204使旋转轴206旋转,从而能够以保持处理空间203内的气密并搭载有多个基板200的状态旋转。
在反应管201的下方,与该反应管201同心圆状地配设有歧管205。歧管205由例如不锈钢等金属材料构成,成为上端部及下端部开放的圆筒形状。反应管201由该歧管205从下端部侧纵向地支承。也就是说,形成处理空间203的反应管201借助歧管205沿铅垂方向立起,构成处理炉202。
炉口构成为,在未图示的舟皿升降机上升时由密封盖219气密地封闭。在歧管205的下端部与密封盖219之间设有将处理空间203内气密封闭的O型圈等封闭构件207。
另外,在歧管205分别连接有用于向处理空间203内导入处理气体、吹扫气体等的气体导入管208,和用于对处理空间203内的气体进行排气的排气部210。排气部210具有排气管210a和APC(Auto Pressure Controller:自动压力控制器)210b。排气部210也称为处理室***排气部。
气体导入管208是喷嘴。在气体导入管208的下游侧设有多个气体供给孔,气体导入管208的管内与反应管201连通。处理气体等被从气体供给孔向处理空间203供给。
气体导入管208例如设有两根。在该情况下,一根是供给原料气体的第一气体导入管208a,另一根管是供给与原料气体反应的反应气体的第二气体导入管208b。此外,在此对两根供给管进行了说明,但不限于此,根据工艺的种类也可以是三根以上。
气体导入管208在上游侧与处理气体搬送管209连接。处理气体搬送管209将气体从气体源等搬送到气体导入管208。第一气体导入管208a与第一处理气体搬送管209a连接,第二气体导入管208b与第二处理气体搬送管209b连接。气体导入管208与处理气体搬送管209的连接在后面说明。
处理气体搬送管209与非活性气体搬送管213连接。非活性气体搬送管213向处理气体搬送管209供给非活性气体。非活性气体为例如氮气(N2),作为处理气体的载运气体或作为反应管201、气体导入管208、处理气体搬送管209的吹扫气体发挥作用。
第一处理气体搬送管209a与第一非活性气体搬送管213a连接,第二处理气体搬送管209b与第二非活性气体搬送管213b连接。
在第一处理气体搬送管209设有对处理气体的供给量进行控制的质量流量计控制器231、阀232。在第一处理气体搬送管209a设有质量流量计控制器231a、阀232a。在处理气体搬送管209b设有质量流量计控制器231b、阀232b。将处理气体搬送管209、处理气体搬送管209b、质量流量计控制器231、阀232一并称为处理气体供给部。
在非活性气体搬送管213设有对非活性气体的供给量进行控制的质量流量计控制器233、阀234。在第一非活性气体导入管213a设有质量流量计控制器233a、阀234a。在第二非活性气体导入管213b设有质量流量计控制器233b、阀234b。将非活性气体搬送管213、质量流量计控制器231、阀234一并称为处理室***非活性气体供给部。
将处理气体供给部和处理室***非活性气体供给部一并称为处理室***气体供给部。
在反应管201的外周以与反应管201同心圆状地配置有作为加热单元(加热机构)的加热器211。加热器211构成为以处理空间203内整体范围成为均匀或规定的温度分布的方式对处理空间203内的环境气体进行加热。
接下来,使用图9说明对上述各部分的动作进行控制的控制器300。控制器300用于对基板处理装置100的整体的动作进行控制。通过控制器300对例如搬送室***非活性气体供给部、搬送室***排气部、移载室***非活性气体供给部、移载室***排气部、处理室***气体供给部、处理室***排气部等基板处理装置的各部件进行控制。
图9是示意性地示出基板处理装置具有的控制器的构成例的框图。控制器300采用包括CPU(Central Processing Unit:中央处理器)301、RAM(Random Access Memory:随机存储器)302、存储装置303、I/O端口304的计算机来构成。RAM302、存储装置303、I/O端口304能够经由内部总线305与CPU301进行数据交换。控制器300构成为,能够与外部存储装置314、例如采用触摸面板等构成的输入输出装置313连接。能够从输入输出装置313向控制器300进行信息输入。另外,输入输出装置313按照控制器300的控制进行信息的显示输出。此外,控制器300以能够经由接收部311与网络312连接的方式构成。这意味着控制器300也能够与网络312上的主机等上位装置320连接。
存储装置303例如由闪存、HDD(Hard Disk Drive:硬盘驱动)等构成。在存储装置303内以能够读取的方式保存有对基板处理装置100的动作进行控制的控制程序、记载有基板处理的步骤、条件等的工艺制程、在直到设定基板200的处理所使用的工艺制程为止的过程中所产生的运算数据、处理数据等。此外,工艺制程通过将基板处理工序中的各步骤以能够由控制器300执行并获得规定的结果的方式组合而成,作为程序发挥作用。以下也将该工艺制程、控制程序等简单统称为程序。此外,在本说明书中使用程序这一用语的情况包括仅包含单一工艺制程的情况、仅包含单一控制程序的情况或包含双方的情况。另外,RAM302构成为临时保持通过CPU301读取的程序、运算数据、处理数据等的存储器区域(工作区域)。
作为运算部的CPU301构成为读取并执行来自存储装置303的控制程序,并且对应于来自输入输出装置313的操作命令的输入等而从存储装置303读取工艺制程。另外,能够对从接收部311输入的设定值、在存储装置303中存储的工艺制程、控制数据进行对比、运算,计算出运算数据。另外,能够根据运算数据执行所对应的处理数据(工艺制程)的决定处理等。并且,CPU301构成为,按照所读取的工艺制程的内容进行针对基板处理装置100中的各部分的动作控制。
此外,控制器300不限于采用专用计算机构成的情况,也可以采用通用的计算机。例如,准备保存有上述程序的外部存储装置(例如磁带、软盘、硬盘等磁盘、CD、DVD等光盘、MO等光磁盘、USB存储器、存储卡等半导体存储器)314,使用该外部存储装置314将程序安装于通用的计算机等,由此,能够构成本实施方式的控制器300。但是,用于向计算机供给程序的机构不限于经由外部存储装置314供给的情况。例如,也可以使用网络312(互联网、专用线路)等通信机构供给程序而不经由外部存储装置314。此外,存储装置303、外部存储装置314采用由计算机能够读取的记录介质构成。以下也将其简单地统称为记录介质。此外,在本说明书中,使用记录介质这一用语的情况包括仅为单一存储装置303的情况、仅为单一外部存储装置314的情况或包含以上双方的情况。
接下来,说明本实施方式的基板处理装置100的动作。该动作主要由控制器300控制。
在载置台122上载置有晶片盒110。晶片盒开启器121的基板搬入搬出口120通过盖装卸机构123而闭合。
在事先对盖部166进行调整以调整孔165的开度并将移载室124设为清洁气体环境时,设定为“移载室124的压力>封入空间144的压力>封入空间152的压力>晶片盒搬送室126的压力”。
首先,在舟皿217未搭载有基板200的状态下,起动清洁气体单元131及排气部132以从清洁气体单元134供给清洁气体。接下来,从清洁气体单元134向移载室124内供给清洁气体133,以使移载室124成为清洁气体133的环境。
此时使排气部127停止。通过使排气部127停止,能够易于达成“移载室124的压力>封入空间144的压力>封入空间152的压力>晶片盒搬送室126的压力”的关系。
因此,供给至封入空间144的清洁气体如图6的箭头135所示,经由移载室124、加强构造141、集合管151、压力调整部160向晶片盒搬送室126移动。即,将封入空间144、封入空间152的氧成分向晶片盒搬送室126搬送。按照这种方式排出封入空间144、封入空间152的残留氧。
排出至晶片盒搬送室126的氧成分被从晶片盒搬送室126的排气部132排出。若从封入空间144、封入空间152排放氧成分而达到规定浓度,则使排气部127起动,对移载室124的压力进行调整。
在此,由于继续维持孔165的开度,因此加强构造141、集合管151处于被清洁气体充满并维持规定压力的状态。因此,能够在短时间容易地对移载室124的压力进行调整。
然而,假设在去除氧成分的期间使排气部127运转的情况下,有可能发生以下问题。在使排气部127运转的情况下,移载室124变为低压且晶片盒搬送室126中的氧成分向移载室124移动。存在氧成分在移载室124内扩散且无法将氧成分去除的可能。因此希望使排气部127停止。
但是,若满足“移载室124的压力>封入空间144的压力>封入空间152的压力>晶片盒搬送室126的压力”的关系,则也可以使排气部127运转。在使排气部127运转的情况下,具有能够尽早去除移载室中124中的氧成分的效果。
另外,若最初使排气部127运转并从移载室124以一定程度去除氧成分,则也可以使排气部127停止。具体来说,在使排气部127运转的期间,将移载室124中的氧成分从移载室排气部去除,并在经过规定时间后使排气部127停止,从封入空间144、封入空间152将各空间的残留氧排出到晶片盒搬送室126。若采用这种方式,则能够尽早将氧成分去除,且能够可靠地从封入空间去除氧成分。
接下来,如图2所示,载置于载置台122的晶片盒110的盖通过盖装卸机构123拆卸,且晶片盒110的基板出入口开放。另外,基板200由基板移载装置125a从晶片盒110拾取,并向舟皿217移载而装填。将基板200交接给舟皿217的基板移载装置125a返回至晶片盒110,将下一基板110装填在舟皿217中。
在由一个(上层或下层)晶片盒开启器121中的基板移载装置125a向舟皿217装填基板200的装填作业中,通过晶片盒搬送装置118将另一晶片盒110从旋转架105及装载端口114向另一(下层或上层)晶片盒开启器121搬送,同时进行由晶片盒开启器121对晶片盒110的开放作业。
若预先指定张数的基板200被装填于舟皿217,则处理炉202的下端部通过炉口盖147而开放。接下来,密封盖219在舟皿升降机115的作用下上升,支承于密封盖219的舟皿217被向处理炉202内的反应管201搬入。
在舟皿加载后,在反应管201内针对基板200实施后述的基板处理。在处理后,通过舟皿升降机115将舟皿217从反应管201搬出(卸载),之后以上述相反的步骤,将基板200及晶片盒110向壳体111的外部搬出。
接下来,说明在处理炉202内进行的基板处理。此外,本实施方式的基板处理工序是使用例如CVD(Chemical Vapor Deposition:化学气相沉积)法在基板200的表面形成膜的方法,作为半导体装置的制造工序之一来实施。
对基板搬入工序S10进行说明。首先,如前所述,将支承有多张基板200的舟皿217由舟皿升降机115提升而搬入(舟皿加载)处理空间203内。在该状态下,密封盖219成为借助O型圈207使歧管205的下端密封的状态。
接下来,对减压及升压工序S20进行说明。将处理空间203内的环境气体从排气部210排出,以使得处理空间203内变为希望压力(真空度)。此时,对处理空间203内的压力进行测量,并基于该测量的压力向排气部210排气。排气部210也称为处理室排气部。对所设置的APC阀210b的开度进行反馈控制。另外,通过加热器211进行加热以使得处理空间203内变为希望温度。此时,以处理空间203内变为希望的温度分布的方式,基于温度传感器检测的温度信息对向加热器211的通电状况进行反馈控制。然后,通过旋转机构204使舟皿217旋转,并使基板200旋转。
接下来说明成膜工序S30。在成膜工序中,向基板200上供给气体并形成希望的膜。
在本实施方式中,说明从第一气体导入管208a供给的作为第一处理气体使用六氯硅烷(Si2Cl6。也称为HCDS)、从第二气体导入管208b供给的作为第二处理气体使用氨气(NH3)的例子。
经由第一处理气体搬送管209a、第一气体导入管208a向处理空间203供给HCDS气体。此外,经由第二处理气体搬送管209b、第二气体导入管208b向处理空间203供给NH3气体。
供给至处理空间203的HCDS气体与NH3气体相互反应,在基板200上形成氮化硅膜。
接下来说明升压工序S40。若成膜工序S30结束,则使APC阀210b的开度减小,向处理空间203内供给吹扫气体,直到处理空间203内的压力变为大气压。吹扫气体是例如N2气体,经由非活性气体搬送管213a、213向处理空间供给。
接下来说明基板搬出工序S50。在此,通过与基板搬入工序S10相反的步骤,将已成膜的基板200从处理空间203内搬出。
(第二实施方式)
接下来说明第二实施方式。第二实施方式的压力调整构造的构造与第一实施方式不同。其他构成与第一实施方式相同。以下围绕区别进行说明。
使用图10说明本实施方式的压力调整部160。
本实施方式的压力调整部160具有与集合管151连通的下方缓冲空间171。在下方缓冲空间171之上设有上方缓冲空间172。在下方缓冲空间171与上方缓冲空间172之间设有孔173,两个空间经由孔173连通。此外,在上方缓冲空间172设有孔174。上方缓冲空间经由孔174与晶片盒搬送室126连通。
在孔173处设有调压装置175。调压装置175具有轴175a、阀芯175b和配重175c。轴175a以滑动自如的方式被支承,阀芯175b使孔173开闭。阀芯175b的重量能够通过变更配重175c的数量、重量来增减。
该调压装置175能够自行控制(自校准)地将下方缓冲空间171内的压力调整为与针对阀芯175b预先设定的重量对应的压力。
由于能够通过调压装置175调整孔173的开度,因此能够设定为“移载室124的压力>封入空间144的压力>封入空间152的压力>晶片盒搬送室126的压力”,调整为随着趋向下游而压力分段下降。在此,由于不直接连接泵这样使压力急剧下降的装置来进行应对,因此能够实现平缓的压力梯度。因此能够将第一封入空间及第二封入空间的压力维持为规定值。因而,与这些空间连通的移载室124的压力调整变得容易。
Claims (22)
1.一种基板处理装置,其特征在于,包括:
处理室,其对搭载于舟皿的基板进行处理;
移载室,其将所述基板移载至所述舟皿;
晶片盒搬送室,其与所述移载室邻接;
搬送室***排气部,其设置于所述晶片盒搬送室;
加强构造,其沿着构成所述搬送室的壳体的壁设置,在与所述壁之间形成第一封入空间;
连通孔,其以使所述壳体内的空间与所述第一封入空间连通的方式设置于所述加强构造;
集合管,其在所述壳体内与多个加强构造连接,并具有与多个所述第一封入空间连通的第二封入空间;
非活性气体供给部,其向构成所述移载室的壳体内供给非活性气体;以及
压力调整部,其在所述晶片盒搬送室中与所述集合管连接,以成为所述移载室的压力>所述第一封入空间的压力>所述第二封入空间的压力>所述晶片盒搬送室的压力的方式进行调整。
2.根据权利要求1所述的基板处理装置,其特征在于,
所述加强构造具有凸缘,所述加强构造通过利用焊接将所述凸缘与所述壁接合而固定于所述壁。
3.根据权利要求2所述的基板处理装置,其特征在于,
所述连通孔在所述加强构造中相对于非活性气体的流动而设置在上游侧。
4.根据权利要求3所述的基板处理装置,其特征在于,
在所述移载室中设有移载室***排气部,
在所述移载室中没有基板的状态下,所述非活性气体供给部向所述壳体供给非活性气体,并且停止所述移载室***排气部的运转。
5.根据权利要求3所述的基板处理装置,其特征在于,
在所述移载室中设有移载室***排气部,
在所述移载室中没有基板的状态下,所述非活性气体供给部一边向所述壳体供给非活性气体一边使所述移载室***排气部运转,从所述移载室排出环境气体,在经过规定时间后,所述非活性气体供给部供给非活性气体,并且所述移载室***排气部停止运转。
6.根据权利要求3所述的基板处理装置,其特征在于,
所述压力调整部具有与所述晶片盒搬送室连通的压力调整构造,所述压力调整构造具有构成内部空间的箱状构造、设置于所述箱状构造的孔、以及对所述孔的开度进行调整的盖。
7.根据权利要求3所述的基板处理装置,其特征在于,
所述压力调整部具有与所述晶片盒搬送室连通的压力调整机构,所述压力调整机构包括:上方缓冲空间和下方缓冲空间;将所述上方缓冲空间与所述下方缓冲空间连通的孔;以及具有轴、阀芯及配重的调压装置。
8.根据权利要求2所述的基板处理装置,其特征在于,
在所述移载室中设有移载室***排气部,
在所述移载室中没有基板的状态下,所述非活性气体供给部向所述壳体供给非活性气体,并且停止所述移载室***排气部的运转。
9.根据权利要求2所述的基板处理装置,其特征在于,
在所述移载室中设有移载室***排气部,
在所述移载室中没有基板的状态下,所述非活性气体供给部一边向所述壳体供给非活性气体一边使所述移载室***排气部运转,从所述移载室排出环境气体,在经过规定时间后,所述非活性气体供给部供给非活性气体,并且所述移载室***排气部停止运转。
10.根据权利要求2所述的基板处理装置,其特征在于,
所述压力调整部具有与所述晶片盒搬送室连通的压力调整构造,所述压力调整构造具有构成内部空间的箱状构造、设置于所述箱状构造的孔、以及对所述孔的开度进行调整的盖。
11.根据权利要求2所述的基板处理装置,其特征在于,
所述压力调整部具有与所述晶片盒搬送室连通的压力调整机构,所述压力调整机构包括:上方缓冲空间和下方缓冲空间;将所述上方缓冲空间与所述下方缓冲空间连通的孔;以及具有轴、阀芯及配重的调压装置。
12.根据权利要求1所述的基板处理装置,其特征在于,
所述连通孔在所述加强构造中相对于非活性气体的流动而设置在上游侧。
13.根据权利要求12所述的基板处理装置,其特征在于,
在所述移载室中设有移载室***排气部,
在所述移载室中没有基板的状态下,所述非活性气体供给部向所述壳体供给非活性气体,并且停止所述移载室***排气部的运转。
14.根据权利要求12所述的基板处理装置,其特征在于,
在所述移载室中设有移载室***排气部,
在所述移载室中没有基板的状态下,所述非活性气体供给部一边向所述壳体供给非活性气体一边使所述移载室***排气部运转,从所述移载室排出环境气体,在经过规定时间后,所述非活性气体供给部供给非活性气体,并且所述移载室***排气部停止运转。
15.根据权利要求12所述的基板处理装置,其特征在于,
所述压力调整部具有与所述晶片盒搬送室连通的压力调整构造,所述压力调整构造具有构成内部空间的箱状构造、设置于所述箱状构造的孔以及对所述孔的开度进行调整的盖。
16.根据权利要求12所述的基板处理装置,其特征在于,
所述压力调整部具有与所述晶片盒搬送室连通的压力调整机构,所述压力调整机构包括:上方缓冲空间和下方缓冲空间;将所述上方缓冲空间与所述下方缓冲空间连通的孔;以及具有轴、阀芯及配重的调压装置。
17.根据权利要求1所述的基板处理装置,其特征在于,
在所述移载室中设有移载室***排气部,
在所述移载室中没有基板的状态下,所述非活性气体供给部向所述壳体供给非活性气体,并且停止所述移载室***排气部的运转。
18.根据权利要求1所述的基板处理装置,其特征在于,
在所述移载室中设有移载室***排气部,
在所述移载室中没有基板的状态下,所述非活性气体供给部一边向所述壳体供给非活性气体一边使所述移载室***排气部运转,从所述移载室排出环境气体,在经过规定时间后,所述非活性气体供给部供给非活性气体,并且所述移载室***排气部停止运转。
19.根据权利要求1所述的基板处理装置,其特征在于,
所述压力调整部具有与所述晶片盒搬送室连通的压力调整构造,所述压力调整构造具有构成内部空间的箱状构造、设置于所述箱状构造的孔以及对所述孔的开度进行调整的盖。
20.根据权利要求1所述的基板处理装置,其特征在于,
所述压力调整部具有与所述晶片盒搬送室连通的压力调整机构,所述压力调整机构包括:上方缓冲空间和下方缓冲空间;将所述上方缓冲空间与所述下方缓冲空间连通的孔;以及具有轴、阀芯及配重的调压装置。
21.一种半导体装置的制造方法,其特征在于,
相对于基板处理装置具有调整工序、移载工序以及处理工序,
所述基板处理装置包括:
处理室,其对搭载于舟皿的基板进行处理;
移载室,其将所述基板移载至所述舟皿;
晶片盒搬送室,其与所述移载室邻接;
在所述晶片盒搬送室设置的排气部;
加强构造,其沿着构成所述搬送室的壳体的壁设置,在与所述壁之间形成第一封入空间;
连通孔,其以使所述壳体内的空间与所述第一封入空间连通的方式设置于所述加强构造;
集合管,其在所述壳体内与多个加强构造连接,并具有与多个所述第一封入空间连通的第二封入空间;
非活性气体供给部,其向构成所述移载室的壳体内供给非活性气体;以及
压力调整部,其在所述晶片盒搬送室中与所述集合管连接,
在所述调整工序中,在所述移载室没有所述基板的状态下,从所述非活性气体供给部向所述移载室供给非活性气体,以成为所述移载室的压力>所述第一封入空间的压力>所述第二封入空间的压力>所述晶片盒搬送室的压力的方式进行调整,
在所述移载工序中,在进行所述调整后将基板从所述晶片盒搬送室向配置于所述移载室的舟皿移载,
在所述处理工序中,在移载所述基板后将所述舟皿向所述处理室搬送并对所述基板进行处理。
22.一种记录介质,其特征在于,
记录通过计算机使基板处理装置执行调整步骤、移载步骤以及处理步骤的程序,
所述基板处理装置包括:
处理室,其对搭载于舟皿的基板进行处理;
移载室,其将所述基板移载至所述舟皿;
晶片盒搬送室,其与所述移载室邻接;
在所述晶片盒搬送室设置的排气部;
加强构造,其沿着构成所述搬送室的壳体的壁设置,在与所述壁之间形成第一封入空间;
连通孔,其以使所述壳体内的空间与所述第一封入空间连通的方式设置于所述加强构造;
集合管,其在所述壳体内与多个加强构造连接,并具有与多个所述第一封入空间连通的第二封入空间;
非活性气体供给部,其向构成所述移载室的壳体内供给非活性气体;以及
压力调整部,其在所述晶片盒搬送室中与所述集合管连接,
在所述调整步骤中,在所述移载室没有所述基板的状态下,从所述非活性气体供给部向所述移载室供给非活性气体,以成为所述移载室的压力>所述第一封入空间的压力>所述第二封入空间的压力>所述晶片盒搬送室的压力的方式进行调整,
在所述移载步骤中,在进行所述调整后将基板从所述晶片盒搬送室向在所述移载室配置的舟皿移载,
在所述处理步骤中,在移栽所述基板后将所述舟皿向所述处理室搬送并对所述基板进行处理。
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