CN111653503A - 改进的溅射处理和装置 - Google Patents

改进的溅射处理和装置 Download PDF

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CN111653503A
CN111653503A CN202010135380.5A CN202010135380A CN111653503A CN 111653503 A CN111653503 A CN 111653503A CN 202010135380 A CN202010135380 A CN 202010135380A CN 111653503 A CN111653503 A CN 111653503A
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丁锺才
申允锡
张德春
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Rokko Systems Pte Ltd
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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Abstract

一种用于溅射多个IC单元的方法，该方法包括以下步骤：向保持环施加层；在该层中切割孔的阵列；将保持环转移至模板，该模板位于放置站内；将所述孔的阵列与所述模板中的凹口的阵列对准；将IC单元传送至所述保持环，每个IC单元对应于对准的孔和凹口；以及向与所述保持环接合的所述IC单元施加溅射方法。

Description

改进的溅射处理和装置
技术领域
本发明涉及集成电路(IC)单元的处理，并且特别地涉及辅助溅射球栅阵列(BGA)IC单元的方法和装置。
背景技术
溅射以将材料薄膜沉积在IC单元上是施加具有非常高熔点的材料的有效方法。因此，鉴于溅射对所施加材料的灵活性，溅射已被广泛使用。
通常，将IC单元的阵列放置在基板上并且穿过溅射室以接纳薄材料层。
在这样做时，由用双面胶带粘附地结合在环上的型板(stencil)支承IC单元。双面胶带被激光切割，其中IC单元装配在由所述激光切割产生的孔内。然后将具有IC单元的型板卸下并且发送以进行溅射。随后将这些单元弹出并且从***中卸下。
然而，型板的使用是不经济的，这是因为型板制造昂贵并且在溅射步骤之后难以回收。因此，一些现有技术***省略了型板，将IC单元直接放置在胶带上。在没有型板支承的情况下使用胶带的困难在于：胶带的柔性往往会使单元未对准以及在运输期间缺乏足够的支承。
发明内容
在第一方面，本发明提供了一种用于溅射多个IC单元的方法，该方法包括以下步骤：向保持环施加层；在该层中切割孔的阵列；将保持环转移至模板，所述模板位于放置站内；将所述孔的阵列与所述模板中的凹口的阵列对准；将IC单元传送至所述保持环，每个IC单元对应于对准的孔和凹口；以及向与所述保持环接合的所述IC单元施加溅射方法。
在第二方面，本发明提供了一种放置站，其包括：具有凹口的阵列的模板；所述模板被布置成容纳具有孔的阵列的保持环；所述孔和所述凹口被布置成对准，以容纳用于溅射的多个IC单元。
因此，通过本发明提供了一种安装在或一体地位于溅射台内的模板，维持了在溅射期间对IC单元的结构支承，而避免了制造一次性型板的额外成本。
IC单元可以与结合在保持环上的层接合，并且IC单元可以在位于所述层上的同时被溅射。
附图说明
参照示出本发明的可能布置的附图进一步描述本发明将是方便的。本发明的其他布置是可能的，并且因此，附图的特殊性不应被理解为取代本发明的前述描述的一般性。
图1A和图1B是根据本发明的一个实施方式的将层施加至保持环的顺序图；
图2A和图2B是根据本发明的另一实施方式的激光切割方法的顺序图；
图3和图4是根据本发明的另一实施方式的将保持环施加至模板的顺序图；以及
图5是根据本发明的另一实施方式的位于所对准的激光切割层的孔和模板的凹口内的单元的正视图。
具体实施方式
因此，本发明提供了具有与IC单元对应的孔的阵列的可重复使用的模板。该方法从对单元进行检查、翻转、对准和定向开始。检查、对准和定向步骤包括：进行顶视检查；然后将单元移动至翻转构件(flipper)以及随后地拾取器以对单元进行对准。通过将模板固定至溅射台，IC单元被直接传送至溅射台以定位在激光切割胶带上，所述激光切割胶带结合在保持环上，而保持环又放置在模板上。在溅射方法之后，单元在卸下之前被弹出、对准并且进一步检查。
图1A和图1B示出了在激光切割孔之前的保持环10的制备。环10容纳覆盖环10中的空间的双面溅射胶带15。溅射胶带15可以是施加至保持环的粘附层。然后将诸如子胶带20的下层附接在胶带15下方，以覆盖溅射胶带15的任何粘附背衬。由于现有技术的型板固定至溅射胶带15，因此覆盖了未被切割的粘附区域。然而，考虑到从方法中移除型板，则将诸如子胶带20的下层用作用于该粘附部分的覆盖物。
应当理解，也可以使用具有足以粘住保持环10的***粘附部分的层，使得不需要子胶带20。需要如图1A所示的***部分17以粘住环10。然而，在该单独的实施方式中，不需要***粘附层的另外的粘附质量。
图2A和图2B对应于激光切割方法55，其中激光切割器60切割溅射胶带15和子胶带20中的孔，以产生用于容纳IC单元的孔25的阵列。一旦在胶带中切割了孔25的阵列，就将双面溅射胶带15的背衬胶带22移除，准备用于容纳IC单元。
图3和图4示出了方法中涉及放置站30的下一步骤。将在溅射胶带和子胶带中具有激光切割孔25的环10降低至放置台35上。在该实施方式中，放置台35包括模板40，模板40具有与溅射胶带中的激光切割孔25对应的凹口45的阵列，激光切割孔25在保持环10降低至模板上时对准。因此，模板40在放置方法期间代替型板，而在溅射之前或之后不需要单独的型板。因此，用模板40替换型板的成本节省是显著的，这是因为与随后丢弃的型板相比，模板40可以重复用于每个放置方法。
图5示出了在模板40上方就位的环10，其中，IC单元50放置在模板凹口45上方的溅射胶带15上，并且因此如前所述对准孔25。单元50被拾取器接合以将单元移动至模板并且在由拾取器传送期间检查单元的底侧。在这种情况下，IC单元是位于溅射胶带15的粘附表面上的BGA芯片，溅射胶带15装配在模板40上方。BGA芯片50包括围绕芯片50的装配在由凹口45和孔25的对准产生的空隙内的焊球连接55。

Claims (9)

1.一种用于溅射多个IC单元的方法，所述方法包括以下步骤：
向保持环施加层；
在所述层中切割孔的阵列；
将所述保持环转移至模板，所述模板位于放置站内；
将所述孔的阵列与所述模板中的凹口的阵列对准；
将IC单元传送至所述保持环，每个IC单元对应于对准的孔和凹口；以及
向与所述保持环接合的所述IC单元施加溅射方法。
2.根据权利要求1所述的方法，在所述施加步骤与所述切割步骤之间还包括向所述保持环施加背衬层的步骤。
3.根据权利要求1或2所述的方法，其中，所述切割步骤包括激光切割。
4.根据权利要求1至3中任一项所述的方法，其中，所述传送步骤包括将所述IC单元与拾取器接合以及将所述IC单元与所述拾取器脱离接合，以转移至所述保持环。
5.根据权利要求1至4中任一项所述的方法，其中，所述传送步骤包括将所述IC单元与拾取器接合以及将所述IC单元与所述拾取器脱离接合，以转移至所述保持环。
6.根据权利要求1至5中任一项所述的方法，其中，所述施加步骤包括向所述保持环放置双面胶带。
7.根据权利要求6所述的方法，其中，所述层是双面胶带，并且所述切割步骤包括：对所述双面胶带进行切割；以及剥离背衬胶带，以使粘附表面露出并且移除所述双面胶带的切割部分。
8.一种放置站，包括：
具有凹口的阵列的模板；
所述模板被布置成容纳具有孔的阵列的保持环；
所述孔和所述凹口被布置成对准，以容纳用于溅射的多个IC单元。
9.根据权利要求8所述的放置站，其中，所述IC单元是BGA芯片，所述孔的尺寸被设置成允许所述BGA芯片的焊球连接穿过所述孔而保持所述BGA芯片的IC部分。
CN202010135380.5A 2019-03-04 2020-03-02 改进的溅射处理和装置 Pending CN111653503A (zh)

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SG10201404371VA (en) * 2014-07-24 2016-02-26 Rokko Systems Pte Ltd Improved dry block assembly
SG10201509996UA (en) * 2015-12-04 2017-07-28 Rokko Systems Pte Ltd Improved substrate processing and apparatus
KR20170127324A (ko) * 2016-05-11 2017-11-21 (주)제이티 반도체소자 캐리어, 이의 제조방법 및 이를 포함하는 소자핸들러

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