CN111490133A - Growth method for coarsening surface of GaN-based L ED blue-green light epitaxial wafer - Google Patents
Growth method for coarsening surface of GaN-based L ED blue-green light epitaxial wafer Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 114
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 23
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 7
- 239000011777 magnesium Substances 0.000 claims description 23
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 238000007788 roughening Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 239000013256 coordination polymer Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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Abstract
The invention relates to a growth method for coarsening the surface of a GaN-based L ED blue-green light epitaxial wafer, which epitaxially grows in a reaction chamber of MOCVD equipment and comprises the steps of (1) processing a substrate, (2) growing a buffer layer on the substrate, (3) sequentially growing a non-doped gallium nitride layer and an N-type gallium nitride layer on the buffer layer, (4) growing a multi-quantum well structure on the N-type gallium nitride layer, (5) growing a magnesium-doped aluminum gallium nitride layer on the multi-quantum well structure, (6) growing a P-type magnesium-doped gallium nitride layer on the aluminum gallium nitride layer, (7) growing an MgN layer on the P-type magnesium-doped gallium nitride layer, and (8) preparing a P electrode and an N electrode.
Description
Technical Field
The invention relates to a coarsening process, in particular to a growth method for improving the luminous efficiency of a gallium nitride-based blue-green light-emitting diode, belonging to the technical field of photoelectrons.
Background
GaN-based blue-green light emitting diodes (L ED) have been commercialized, L ED brightness is mainly determined by quantum efficiency and light extraction efficiency in the active region, L ED has an internal quantum efficiency of 80% or more, but, due to low light extraction efficiency, many photons generated in the active region do not escape L ED, so that external quantum efficiency is low, and thus, improving light extraction efficiency is an effective way to improve L ED external quantum efficiency, L ED has an external quantum efficiency largely affected by light extraction efficiency because of the relatively high refractive index of GaN, the refractive index of GaN (nban) and the refractive index of air (nair) are 2.5 and 1, respectively, and a critical angle of about 23 ° is obtained according to refraction, which makes a large portion of light emitted from the active region not directly emitted into air but undergo multiple internal reflections and finally absorbed by L ED itself, and not only reduces light emission efficiency but also increases heat dissipation problems of L ED.
The surface roughening is firstly proposed by Japanese biochemistry, and the principle is to roughen the geometrical shapes of the inside and the outside of the device, so that the total reflection of light rays in the device is destroyed, and the light extraction efficiency is improved.
However, L ED surface is a high-temperature growth crystal composed of GaN, so that the crystal has high hardness and excellent corrosion resistance, the traditional industrial physical roughening technology is not suitable for processing the substances, and researches in the industry find that the gallium nitride (GaN) crystal can be effectively etched by a plasma and a chemical etching method.
Chinese patent document CN101714594A discloses a method for roughening the surface of an epitaxial layer of a GaN-based led, which comprises growing a SiOx or SiNx thin film on the surface of the epitaxial layer, coating a photoresist on the thin film and preparing a mask pattern, etching the SiOx or SiNx to obtain a patterned SiOx or SiNx thin film, and epitaxially growing P-type GaN using the SiOx or SiNx thin film as the mask to obtain a roughened L ED surface.
Disclosure of Invention
Aiming at the defects of the existing gallium nitride light-emitting diode in improving the carrier concentration and surface roughening methods, the invention provides a growth method of a GaN-based blue-green L ED epitaxial wafer capable of obviously improving the luminous efficiency, which can effectively improve the luminous efficiency of a L ED epitaxial wafer and has the advantages of simple process, strong operability and lower cost.
The invention aims to provide a method for roughening the surface of a GaN-based blue-green light epitaxial wafer, which does not need an etching step after epitaxy and directly realizes roughening of the surface appearance of a P-type material in the epitaxial growth process.
The technical scheme of the invention is as follows:
a growth method for coarsening the surface of a GaN-based L ED blue-green light epitaxial wafer is used for epitaxial growth in a reaction chamber of MOCVD equipment and comprises the following steps:
(1) processing the substrate;
(2) growing a buffer layer on the substrate;
(3) growing a non-doped gallium nitride layer and an N-type gallium nitride layer on the buffer layer in sequence;
(4) growing a multi-quantum well structure on the N-type gallium nitride layer;
(5) growing a magnesium-doped aluminum gallium nitride layer on the multi-quantum well structure;
(6) growing a P-type magnesium-doped gallium nitride layer on the aluminum gallium nitride layer;
(7) growing an MgN layer on the P-type magnesium-doped gallium nitride layer; the method comprises the following steps: NH at the growth temperature of 850 ℃ and 950 DEG C3Growing a MgN layer with the thickness of not more than 50nm on the P-type magnesium-doped gallium nitride layer under the conditions that the volume is 20-40L/min and the Mg flow is 800-1800sccm, wherein the growth time is 3-20 min;
(8) and preparing a P electrode and an N electrode.
The invention coarsens the surface of the GaN-based blue-green light epitaxial wafer by an epitaxial means, and can control the access time and flow of a Mg source and NH3The flow of the light source is used for obtaining the surfaces with different roughness, the total reflection is reduced through the coarsening degree of the surfaces, the light emitting efficiency is improved, the subsequent complicated tube core etching process for achieving the same purpose is reduced, the time is saved, and the production cost is reduced.
Further preferably, in the step (7), a MgN layer is grown on the P-type magnesium-doped gallium nitride layer; the method comprises the following steps: NH at a growth temperature of 900 DEG C3And under the conditions that the volume is 30L and the Mg flow is 1500sccm, growing a MgN layer with the thickness of not more than 50nm on the P-type magnesium-doped gallium nitride layer for 5 min.
According to a preferred embodiment of the present invention, the step (1) of processing a substrate; the method comprises the following steps: and putting the substrate into a reaction chamber of MOCVD equipment, heating to 1150 ℃ under a hydrogen atmosphere, and treating for 15 min.
According to the invention, preferably, the step (2) is that a buffer layer is grown on the substrate; the method comprises the following steps: and growing a buffer layer with the thickness of 30nm on the substrate under the condition that the growth temperature is 550 ℃.
According to the preferable embodiment of the invention, in the step (3), the undoped gallium nitride layer and the N-type gallium nitride layer are sequentially grown on the buffer layer, namely, the undoped gallium nitride layer with the thickness of 2 microns and the N-type gallium nitride layer with the thickness of 3 microns are sequentially grown on the buffer layer under the condition that the growth temperature is 1100 ℃, and the silicon doping concentration of the N-type gallium nitride 4 is 1 × 1019/cm-3。
According to a preferable mode of the invention, in the step (4), a multiple quantum well structure is grown on the N-type gallium nitride layer; the multi-quantum well structure comprises a well layer and a barrier layer which grow periodically, wherein the well layer is made of indium gallium nitride, the barrier layer is made of gallium nitride, and the period of the multi-quantum well structure is 20, which means that: and growing a multi-quantum well structure on the N-type gallium nitride layer at the growth temperature of 750 ℃.
Preferably, in step (5), the thickness of the mg-doped algan layer is 100nm, and the mg doping concentration is 1 × 1020/cm-3。
According to the preferable embodiment of the invention, in the step (6), the growing of the P-type magnesium-doped gallium nitride layer on the aluminum gallium nitride layer means that a P-type magnesium-doped gallium nitride layer with a thickness of 50nm is grown on the aluminum gallium nitride layer at a growth temperature of 900 ℃, and the magnesium doping concentration of the P-type magnesium-doped gallium nitride layer is 5 × 1020/cm-3。
According to a preferred embodiment of the present invention, in the step (8), the P electrode and the N electrode are prepared by: and preparing a P electrode on the MgN layer, and preparing an N electrode on the N-type gallium nitride layer.
Preferred according to the invention are TMGa, NH respectively3、SiH4、CP2Mg is used as a Ga source, an N source, a Si source and an Mg source.
The invention has the beneficial effects that:
1. the invention coarsens the surface of the GaN-based blue-green light epitaxial wafer by an epitaxial means, can obtain surfaces with different roughness by controlling the access time and flow of an Mg source and the flow of NH3, reduces total reflection by coarsening the surface, improves the light extraction efficiency, reduces the subsequent complicated tube core etching process for achieving the same purpose, saves time and reduces production cost.
2. The epitaxial coarsening growth method provided by the invention is characterized in that the growth time and the source flow are controlled under the MOCVD growth on-line condition to obtain the material with the coarsened surface, thereby avoiding the post-complex process, saving the time and reducing the production cost. The scheme is provided to improve the extraction efficiency of the GaN-based blue-green light epitaxial wafer by about 30%.
Drawings
FIG. 1 is a schematic structural diagram of a GaN-based L ED blue-green light epitaxial wafer L ED prepared by the method of the invention.
Fig. 2 is a plan view of an atomic force microscope photograph of a roughened surface topography of a gan led epitaxial wafer in example 1 of the present invention.
Fig. 3 is a three-dimensional image of an atomic force microscope photograph of a roughened surface topography of a gan led epitaxial wafer in example 1 of the present invention.
FIG. 4 is a diagram showing the effect of a GaN-based L ED blue-green light epitaxial wafer L ED structure prepared by the method of the present invention;
1. the GaN-based LED comprises a substrate, 2 parts of a buffer layer, 3 parts of an undoped GaN layer, 4 parts of an N-type GaN layer, 5 parts of a multi-quantum well structure, 6 parts of a Mg-doped AlGaN layer, 7 parts of a P-type Mg-doped GaN layer, 8 parts of a P electrode, 9 parts of an N electrode, 10 parts of an MgN layer.
Detailed Description
The invention is further defined in the following, but not limited to, the figures and examples in the description.
Example 1 a sapphire substrate GaN-based L ED epitaxial wafer, as shown in fig. 1, was grown according to the following steps:
(1) the sapphire substrate 1 was placed in the reaction chamber of an MOCVD apparatus, heated to 1150 ℃ under a hydrogen atmosphere, and treated for 15 min.
(2) Growing a buffer layer 2 on the substrate at the growth temperature of 550 ℃ and the thickness of 30 nm;
(3) growing non-doped gallium nitride 3 and N-type gallium nitride 4 on the buffer layer 2 at 1100 deg.C to a thickness of non-doped gallium nitride2 μm hetero gallium nitride and 3 μm N gallium nitride the silicon doping concentration of N gallium nitride 4 is 1 × 1019/cm-3。
(4) And (3) growing a multi-quantum well structure 5 on the N-type gallium nitride 4, wherein the well layer is made of indium gallium nitride material, the barrier layer is made of gallium nitride material, the growth temperature is 750 ℃, and the growth period of the multi-quantum well is 20.
(5) Growing a Mg-doped AlGaN layer 6 on the multiple quantum well structure 5, wherein the thickness of the Mg-doped AlGaN layer is 100nm, and the Mg doping concentration is 1 × 1020/cm-3。
(6) Growing a GaN layer doped with magnesium on the surface of the aluminum gallium nitride layer 6 at the growth temperature of 900 ℃ and the magnesium doping concentration of 5 × 1020/cm-3. The thickness of the Mg-doped InGaN layer is 50 nm.
(7) Growing an MgN layer 10 on the surface of the Mg-doped gallium nitride layer 7 at the growth temperature of 900 ℃ and NH3The gas is 20L, the Mg flow is 1000sccm, and the time is 10 min.
The coarsened appearance of the surface of the prepared epitaxial wafer is shown in figures 2 and 3. Fig. 3 is a three-dimensional diagram corresponding to fig. 2, showing the coordinates and the angle parameters at the upper right.
Compared with a GaN-based L ED epitaxial structure prepared by a traditional method (a sapphire substrate), the L ED prepared by using the GaN-based L ED epitaxial wafer of the embodiment 1 has about 25% improved luminous efficiency, and the effect is shown in fig. 4.
Example 2 a sapphire substrate GaN-based L ED epitaxial wafer was grown according to the following steps:
(1) the sapphire substrate 1 was placed in the reaction chamber of an MOCVD apparatus, heated to 1150 ℃ under a hydrogen atmosphere, and treated for 15 min.
(2) Growing a gallium nitride buffer layer 2 on the substrate, wherein the growth temperature is 550 ℃, and the thickness is 30 nm;
(3) growing undoped gallium nitride 3 and N-type gallium nitride 4 on the buffer layer 2 at 1100 deg.C to a thickness of 2 μm and 3 μm respectively, wherein the silicon doping concentration of N-type gallium nitride 4 is 1 × 1019/cm-3。
(4) And (3) growing a multi-quantum well structure 5 on the N-type gallium nitride 4, wherein the well layer is made of indium gallium nitride material, the barrier layer is made of gallium nitride material, the growth temperature is 750 ℃, and the growth period of the multi-quantum well is 20.
(5) Growing a Mg-doped AlGaN layer 6 on the multiple quantum well structure 5, wherein the thickness of the Mg-doped AlGaN layer is 100nm, and the Mg doping concentration is 1 × 1020/cm-3。
(6) Growing a GaN layer doped with magnesium on the surface of the aluminum gallium nitride layer 6 at the growth temperature of 900 ℃ and the magnesium doping concentration of 5 × 1020/cm-3The thickness of the Mg-doped InGaN layer is 50 nm.
(7) Growing an MgN layer 10 on the surface of the Mg-doped gallium nitride layer 7 at the growth temperature of 900 ℃ and NH3The gas content was 30L, the Mg flow rate was 1500sccm, and the time was 15 min.
Compared with a GaN-based L ED epitaxial structure prepared by a traditional method (a sapphire substrate), the luminous efficiency of L ED prepared by using the GaN-based L ED epitaxial wafer of the embodiment 2 is improved by about 29%;
the above description is only exemplary of the present invention and should not be taken as limiting the invention, and any modifications, equivalents, improvements and the like that are within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (10)
1. A growth method for coarsening the surface of a GaN-based L ED blue-green light epitaxial wafer is characterized by comprising the following steps of:
(1) processing the substrate;
(2) growing a buffer layer on the substrate;
(3) growing a non-doped gallium nitride layer and an N-type gallium nitride layer on the buffer layer in sequence;
(4) growing a multi-quantum well structure on the N-type gallium nitride layer;
(5) growing a magnesium-doped aluminum gallium nitride layer on the multi-quantum well structure;
(6) growing a P-type magnesium-doped gallium nitride layer on the aluminum gallium nitride layer;
(7) growing an MgN layer on the P-type magnesium-doped gallium nitride layer; the method comprises the following steps: NH at the growth temperature of 850 ℃ and 950 DEG C3The growth thickness of the P-type magnesium-doped gallium nitride layer is not more than 20-40L/min under the conditions that the volume is 20-40L/min and the Mg flow rate is 800-1800sccmThe MgN layer with the thickness of more than 50nm grows for 3-20 min;
(8) and preparing a P electrode and an N electrode.
2. The growth method for coarsening the surface of the GaN-based L ED blue-green light epitaxial wafer as claimed in claim 1, wherein the step (7) of growing the MgN layer on the P-type GaN layer doped with magnesium is that NH is added to the GaN layer doped with magnesium at the growth temperature of 900 DEG C3And under the conditions that the volume is 30L and the Mg flow is 1500sccm, growing a MgN layer with the thickness of not more than 50nm on the P-type magnesium-doped gallium nitride layer for 5 min.
3. The growth method for coarsening the surface of the GaN-based L ED blue-green light epitaxial wafer as claimed in claim 1, wherein the step (1) of processing the substrate means that the substrate is placed in a reaction chamber of MOCVD equipment and heated to 1150 ℃ for 15min under hydrogen atmosphere.
4. The growth method for coarsening the surface of the GaN-based L ED blue-green light epitaxial wafer as claimed in claim 1, wherein the step (2) of growing the buffer layer on the substrate means that the buffer layer with the thickness of 30nm is grown on the substrate under the condition that the growth temperature is 550 ℃.
5. The growth method for coarsening the surface of a GaN-based L ED blue-green light epitaxial wafer as claimed in claim 1, wherein the step (3) of sequentially growing the undoped gallium nitride layer and the N-type gallium nitride layer on the buffer layer means that the undoped gallium nitride layer with the thickness of 2 μm and the N-type gallium nitride layer with the thickness of 3 μm are sequentially grown on the buffer layer at the growth temperature of 1100 ℃, and the silicon doping concentration of the N-type gallium nitride 4 is 1 × 1019/cm-3。
6. The growth method for roughening the surface of the GaN-based L ED blue-green light epitaxial wafer according to claim 1, wherein in the step (4), a multi-quantum well structure is grown on the N-type gallium nitride layer, the multi-quantum well structure comprises a well layer and a barrier layer which are periodically grown, the well layer is made of InGaN, the barrier layer is made of gallium nitride, the period of the multi-quantum well structure is 20, and the growth method means that the multi-quantum well structure is grown on the N-type gallium nitride layer under the condition that the growth temperature is 750 ℃.
7. The growth method for coarsening the surface of a GaN-based L ED blue-green light epitaxial wafer as claimed in claim 1, wherein in the step (5), the thickness of the Mg-doped AlGaN layer is 100nm, and the Mg doping concentration is 1 × 1020/cm-3。
8. The growing method for roughening the surface of a GaN-based L ED blue-green light epitaxial wafer according to claim 1, wherein the step (6) of growing the P-type magnesium-doped gallium nitride layer on the AlGaN layer means that a P-type magnesium-doped gallium nitride layer with a thickness of 50nm is grown on the AlGaN layer at a growth temperature of 900 ℃, and the magnesium doping concentration of the P-type magnesium-doped gallium nitride layer is 5 × 1020/cm-3。
9. The growth method for coarsening the surface of the GaN-based L ED blue-green light epitaxial wafer as claimed in claim 1, wherein the step (8) of preparing the P electrode and the N electrode is to prepare the P electrode on the MgN layer and the N electrode on the N-type gallium nitride layer.
10. The method for growing GaN-based L ED blue-green light epitaxial wafer of any of claims 1-9, wherein TMGa and NH are used respectively3、SiH4、CP2Mg is used as a Ga source, an N source, a Si source and an Mg source.
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| CN112133797A (en) * | 2020-08-11 | 2020-12-25 | 华灿光电（浙江）有限公司 | Growth method of light emitting diode epitaxial wafer |
| CN113421952A (en) * | 2021-06-23 | 2021-09-21 | 南方科技大学 | Micro LED chip and preparation method thereof |
| CN114196927A (en) * | 2021-11-25 | 2022-03-18 | 深圳先进技术研究院 | Ultraviolet anti-reflection glass based on sapphire substrate and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112133797A (en) * | 2020-08-11 | 2020-12-25 | 华灿光电（浙江）有限公司 | Growth method of light emitting diode epitaxial wafer |
| CN112133797B (en) * | 2020-08-11 | 2021-11-05 | 华灿光电（浙江）有限公司 | Growth method of light emitting diode epitaxial wafer |
| CN113421952A (en) * | 2021-06-23 | 2021-09-21 | 南方科技大学 | Micro LED chip and preparation method thereof |
| CN114196927A (en) * | 2021-11-25 | 2022-03-18 | 深圳先进技术研究院 | Ultraviolet anti-reflection glass based on sapphire substrate and preparation method and application thereof |
| CN114196927B (en) * | 2021-11-25 | 2024-02-27 | 深圳先进技术研究院 | Ultraviolet anti-reflection glass based on sapphire substrate and preparation method and application thereof |
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