CN106486573A - A kind of LED epitaxial structure of high hole injection efficiency - Google Patents

A kind of LED epitaxial structure of high hole injection efficiency Download PDF

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Publication number
CN106486573A
CN106486573A CN201510537614.8A CN201510537614A CN106486573A CN 106486573 A CN106486573 A CN 106486573A CN 201510537614 A CN201510537614 A CN 201510537614A CN 106486573 A CN106486573 A CN 106486573A
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layer
type
gan
growth
thickness
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Inventor
郑建钦
田宇
吴真龙
曾颀尧
赖志豪
林政志
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NANTONG TONGFANG SEMICONDUCTOR CO Ltd
Tsinghua Tongfang Co Ltd
Tongfang Co Ltd
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NANTONG TONGFANG SEMICONDUCTOR CO Ltd
Tongfang Co Ltd
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Priority to CN201510537614.8A priority Critical patent/CN106486573A/en
Publication of CN106486573A publication Critical patent/CN106486573A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Abstract

A kind of LED epitaxial structure of high hole injection efficiency, is related to LED epitaxial technical field.The present invention includes substrate, GaN cushion, layer of undoped gan, N-type GaN layer, MQW, electronic barrier layer, p-type GaN layer and p-type contact layer from bottom to up successively.Wherein MQW is made up of InGaN layer and GaN layer.It is structurally characterized in that, described electronic barrier layer is made up of p-type AlxGa1 xN layer, AlN layer and p-type InyGa1 yN layer from bottom to up successively, wherein 0<x≤0.3、0<y≤0.2.Described electronic barrier layer includes 8 12 growth cycles, and growth pressure is 100 200Torr, grows in nitrogen environment.The present invention constitutes electronic barrier layer using by p-type AlxGa1 xN layer, AlN layer and p-type InyGa1 yN superlattice layer, improves hole concentration and mobility, the luminous efficiency of lifting Light-Emitting Diode by straining and reducing alloy scattering.

Description

A kind of LED epitaxial structure of high hole injection efficiency
Technical field
The present invention relates to LED epitaxial technical field, the particularly LED epitaxial structure of high hole injection efficiency.
Background technology
III-V nitride light emitting diode have the advantages that efficiently, energy-saving and environmental protection, life-span length, have important application in solid-state illumination field.With the increase of III-V nitride light emitting diode range of application, the requirement also more and more higher to the photoelectric characteristic of light emitting diode.
Conventionally, as the efficiency that polarity effect, electronics overflow cause declines（Efficiency Droop）Phenomenon, conventional p-type AlGaN to reduce electronics overflow as electronic barrier layer, lifts brightness.But because Mg is up to 150-250meV so that hole concentration at room temperature is very low in the activation energy of AlGaN, only the Mg of minority can be activated.With the increase of Al concentration, Mg is higher in the activation energy of p-type AlGaN electronic barrier layer, and hole concentration is lower, also more can stop the injection in hole, directly affects the luminous efficiency of Light-Emitting Diode.
Content of the invention
For above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of LED epitaxial structure of high hole injection efficiency.It constitutes electronic barrier layer using by p-type AlxGa1-xN layer, AlN layer and p-type InyGa1-yN superlattice layer, improves hole concentration and mobility, the luminous efficiency of lifting Light-Emitting Diode by straining and reducing alloy scattering.
In order to reach foregoing invention purpose, technical scheme is realized as follows：
A kind of LED epitaxial structure of high hole injection efficiency, includes substrate, GaN cushion, layer of undoped gan, N-type GaN layer, MQW, electronic barrier layer, p-type GaN layer and p-type contact layer from bottom to up successively.Wherein MQW is made up of InGaN layer and GaN layer.It is structurally characterized in that, described electronic barrier layer is made up of p-type AlxGa1-xN layer, AlN layer and p-type InyGa1-yN layer from bottom to up successively, wherein 0<x≤0.3、0<y≤0.2.Described electronic barrier layer includes 8-12 growth cycle, and growth pressure is 100-200Torr, grows in nitrogen environment.
In above-mentioned LED epitaxial structure, the thickness of described p-type AlxGa1-xN layer is 40-60 angstrom, and growth temperature is 900-1100 DEG C.
In above-mentioned LED epitaxial structure, the thickness of described AlN layer is 5-15 angstrom, and growth temperature is 900-1100 DEG C.
In above-mentioned LED epitaxial structure, the thickness of described p-type InyGa1-yN layer is 20-40 angstrom, and growth temperature is 900-1100 DEG C.
In above-mentioned LED epitaxial structure, described substrate is any one in Sapphire Substrate, GaN substrate, Si substrate, SiC substrate or LAO substrate.
The present invention due to employing said structure, that is, adopts p-type AlxGa1-xN layer, AlN layer and p-type InyGa1-yN superlattice layer as electronic barrier layer.The strain being provided by AlN layer is increasing hole concentration, and can improve hole mobility by way of reducing alloy scattering, thus reducing electronics overflow, lifts LED luminance.
The present invention will be further described with reference to the accompanying drawings and detailed description.
Brief description
Fig. 1 is the structural representation of the present invention.
Specific embodiment
Referring to Fig. 1, the LED epitaxial structure of high hole injection efficiency of the present invention includes substrate 1, GaN cushion 2, layer of undoped gan 3, N-type GaN layer 4, MQW 5, electronic barrier layer 6, p-type GaN layer 7 and p-type contact layer 8 from bottom to up successively.Wherein electronic barrier layer 6 includes 8-12 growth cycle, and each cycle comprises p-type AlxGa1-xN layer 9, AlN layer 10 and p-type InyGa1-yN layer 11 from bottom to up successively, and growth pressure is 100-200Torr, grows in nitrogen environment.The thickness of p-type AlxGa1-xN layer 9 is 40-60 angstrom, and the thickness of AlN layer 10 is 5-15 angstrom, and the thickness of p-type InyGa1-yN layer 11 is 20-40 angstrom, and growth temperature is 900-1100 DEG C.
LED epitaxial structure of the present invention adopts detailed description below：
Embodiment one：
（1）Sapphire Substrate 1 is carried out at 1000 DEG C high-temperature cleaning process, the time is 10min, then carries out nitrogen treatment.
（2）Temperature is reduced to 500 DEG C, grows GaN cushion 2, thickness is 100 angstroms, pressure is 300Torr.
（3）Obstructed trimethyl gallium（TMGa）, temperature is increased to 1000 DEG C, GaN cushion 2 is made annealing treatment, the time is 3min, then pass to TMGa growth layer of undoped gan 3, thickness is 1 μm, and pressure is 300Torr.
（4）It is passed through Disilicoethane, temperature is 1000 DEG C, grows N-type GaN layer 4,2 μm of thickness, pressure is 100Torr.
（5）After N-type GaN layer 4 growth terminates, grow MQW 5, MQW 5 is made up of InGaN layer 13 and GaN layer 12.The growth temperature of GaN layer 12 is 800 DEG C, and thickness is 100 angstroms, and the growth temperature of InGaN layer 13 is 750 DEG C, and thickness is 28 angstroms, and the growth pressure of MQW 5 is 100Torr, and the periodicity of MQW 5 is 8, grows in nitrogen environment.
（6）After MQW 5 growth terminates, temperature is increased to 900 DEG C, carries out the growth of electronic barrier layer 6, and growth cycle is 8, and growth pressure is 100Torr.Wherein, the thickness of p-type Al0.2Ga0.8N layer 9 is 40 angstroms, and the thickness of AlN layer 10 is 5 angstroms, and the thickness of p-type In0.1Ga0.9N layer 11 is 20 angstroms.
（7）Temperature is increased to 1000 DEG C, carries out the growth of p-type GaN layer 7, and growth pressure is 100Torr, and thickness is 200nm.
（8）After p-type GaN layer 7 growth terminates, growing P-type contact layer 8, growth temperature is 700 DEG C, and thickness is 10nm.
（9）After epitaxial growth terminates, temperature is down to 600 DEG C, carries out activation processing under the conditions of purity nitrogen, and the time continues 10min, is then down to room temperature, finally gives LED.
Embodiment two：
（1）Sapphire Substrate 1 is carried out at 1100 DEG C high-temperature cleaning process, the time is 20min, then carries out nitrogen treatment.
（2）Temperature is reduced to 600 DEG C, grows GaN cushion 2, thickness is 200 angstroms, pressure is 450Torr.
（3）Obstructed trimethyl gallium（TMGa）, temperature is increased to 1100 DEG C, GaN cushion 2 is made annealing treatment, the time is 4min, then pass to TMGa growth layer of undoped gan 3, thickness is 1.5 μm, and pressure is 400Torr.
（4）It is passed through Disilicoethane, temperature is 1100 DEG C, grows N-type GaN layer 4,3 μm of thickness, pressure is 200Torr.
（5）After N-type GaN layer 4 growth terminates, grow MQW 5, MQW 5 is made up of InGaN layer 13 and GaN layer 12.The growth temperature of GaN layer 12 is 850 DEG C, and thickness is 110 angstroms, and the growth temperature of InGaN layer 13 is 770 DEG C, and thickness is 30 angstroms, and the growth pressure of MQW is 150Torr, and the periodicity of MQW is 9, grows in nitrogen environment.
（6）After MQW 5 growth terminates, temperature is increased to 1000 DEG C, carries out the growth of electronic barrier layer 6, and growth cycle is 10, and growth pressure is 150Torr.Wherein, the thickness of p-type Al0.25Ga0.75N layer 9 is 50 angstroms, and the thickness of AlN layer 10 is 10 angstroms, and the thickness of p-type In0.15Ga0.85N layer 11 is 30 angstroms.
（7）Temperature is increased to 1100 DEG C, carries out the growth of p-type GaN layer 7, and growth pressure is 200Torr, and thickness is 300nm.
（8）After p-type GaN layer 7 growth terminates, growing P-type contact layer 8, growth temperature is 725 DEG C, and thickness is 15nm.
（9）After epitaxial growth terminates, temperature is down to 700 DEG C, carries out activation processing under the conditions of purity nitrogen, and the time continues 20min, is then down to room temperature, finally gives LED.
Embodiment three：
（1）Sapphire Substrate 1 is carried out at 1200 DEG C high-temperature cleaning process, the time is 30min, then carries out nitrogen treatment.
（2）Temperature is reduced to 700 DEG C, grows GaN cushion 2, thickness is 300 angstroms, pressure is 600Torr.
（3）Obstructed trimethyl gallium（TMGa）, temperature is increased to 1200 DEG C, GaN cushion 2 is made annealing treatment, the time is 5min, then pass to TMGa growth layer of undoped gan 3, thickness is 2 μm, and pressure is 500Torr.
（4）It is passed through Disilicoethane, temperature is 1200 DEG C, grows N-type GaN layer 4,4 μm of thickness, pressure is 300Torr.
（5）After N-type GaN layer 4 growth terminates, grow MQW 5, MQW 5 is made up of InGaN layer 13 and GaN layer 12.The growth temperature of GaN layer 12 is 900 DEG C, and thickness is 120 angstroms, and the growth temperature of InGaN layer 13 is 790 DEG C, and thickness is 32 angstroms, and the growth pressure of MQW is 200Torr, and the periodicity of MQW is 10, grows in nitrogen environment.
（6）After MQW 5 growth terminates, temperature is increased to 1100 DEG C, carries out the growth of electronic barrier layer 6, and growth cycle is 12, and growth pressure is 200Torr.Wherein, the thickness of p-type Al0.3Ga0.7N layer 9 is 60 angstroms, and the thickness of AlN layer 10 is 15 angstroms, and the thickness of p-type In0.2Ga0.8N layer 11 is 40 angstroms.
（7）Temperature is increased to 1200 DEG C, carries out the growth of p-type GaN layer 7, and growth pressure is 300Torr, and thickness is 400nm.
（8）After p-type GaN layer 7 growth terminates, growing P-type contact layer 8, growth temperature is 750 DEG C, and thickness is 20nm.
（9）After epitaxial growth terminates, temperature is down to 800 DEG C, carries out activation processing under the conditions of purity nitrogen, and the time continues 30min, is then down to room temperature, finally gives LED.
In the present invention, electronic barrier layer 6 is by p-type AlxGa1-xN layer（6）, AlN layer（10）With p-type InyGa1-yN layer（11）The structure constituting is applicable not only to LED, applies also for LD.
The above, the only specific embodiment of the present invention is however it is not limited to other embodiments of the present invention.Within the technology path principle of all genus present invention, any obvious modification, replacement or the improvement made, all should belong within protection scope of the present invention.

Claims (5)

1. a kind of LED epitaxial structure of high hole injection efficiency, includes substrate from bottom to up successively（1）, GaN cushion（2）, layer of undoped gan（3）, N-type GaN layer（4）, MQW（5）, electronic barrier layer（6）, p-type GaN layer（7）With p-type contact layer（8）, wherein MQW（5）By InGaN layer（13）And GaN layer（12）Constitute it is characterised in that：Described electronic barrier layer（6）From bottom to up successively by p-type AlxGa1-xN layer（9）, AlN layer（10）With p-type InyGa1-yN layer（11）Constitute, wherein 0<x≤0.3、0<Y≤0.2, described electronic barrier layer（6）Including 8-12 growth cycle, growth pressure is 100-200Torr, grows in nitrogen environment.
2. high hole injection efficiency according to claim 1 LED epitaxial structure it is characterised in that：Described p-type AlxGa1-xN layer（9）Thickness be 40-60 angstrom, growth temperature be 900-1100 DEG C.
3. high hole injection efficiency according to claim 1 and 2 LED epitaxial structure it is characterised in that：Described AlN layer（10）Thickness be 5-15 angstrom, growth temperature be 900-1100 DEG C.
4. high hole injection efficiency according to claim 3 LED epitaxial structure it is characterised in that：Described p-type InyGa1-yN layer（11）Thickness be 20-40 angstrom, growth temperature be 900-1100 DEG C.
5. high hole injection efficiency according to claim 4 LED epitaxial structure it is characterised in that：Described substrate（1）For any one in Sapphire Substrate, GaN substrate, Si substrate, SiC substrate or LAO substrate.
CN201510537614.8A 2015-08-28 2015-08-28 A kind of LED epitaxial structure of high hole injection efficiency Pending CN106486573A (en)

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Cited By (5)

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Publication number Priority date Publication date Assignee Title
CN107394021A (en) * 2017-07-18 2017-11-24 广东省半导体产业技术研究院 A kind of heterojunction structure LED component for strengthening hole injection
CN108682721A (en) * 2018-04-25 2018-10-19 华灿光电(苏州）有限公司 A kind of LED epitaxial slice and preparation method thereof
CN108831974A (en) * 2018-04-27 2018-11-16 华灿光电(苏州）有限公司 A kind of LED epitaxial slice and its manufacturing method
CN109004074A (en) * 2018-08-09 2018-12-14 聚灿光电科技股份有限公司 LED epitaxial structure and preparation method thereof
CN116154066A (en) * 2023-04-19 2023-05-23 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode

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CN204966527U (en) * 2015-08-28 2016-01-13 南通同方半导体有限公司 LED epitaxial structure of high hole injection efficiency

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107394021A (en) * 2017-07-18 2017-11-24 广东省半导体产业技术研究院 A kind of heterojunction structure LED component for strengthening hole injection
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CN108682721A (en) * 2018-04-25 2018-10-19 华灿光电(苏州）有限公司 A kind of LED epitaxial slice and preparation method thereof
CN108831974A (en) * 2018-04-27 2018-11-16 华灿光电(苏州）有限公司 A kind of LED epitaxial slice and its manufacturing method
CN109004074A (en) * 2018-08-09 2018-12-14 聚灿光电科技股份有限公司 LED epitaxial structure and preparation method thereof
CN116154066A (en) * 2023-04-19 2023-05-23 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode
CN116154066B (en) * 2023-04-19 2023-06-23 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode

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