CN111312884A - Light-emitting component - Google Patents
Light-emitting component Download PDFInfo
- Publication number
- CN111312884A CN111312884A CN202010246742.8A CN202010246742A CN111312884A CN 111312884 A CN111312884 A CN 111312884A CN 202010246742 A CN202010246742 A CN 202010246742A CN 111312884 A CN111312884 A CN 111312884A
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- Prior art keywords
- emitting component
- light
- cover
- bottom substrate
- heat
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- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000004806 packaging method and process Methods 0.000 claims abstract description 11
- 239000000084 colloidal system Substances 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 36
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 22
- 239000000853 adhesive Substances 0.000 claims description 19
- 230000001070 adhesive effect Effects 0.000 claims description 19
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 3
- 239000007787 solid Substances 0.000 abstract description 3
- 239000011889 copper foil Substances 0.000 description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- 239000003292 glue Substances 0.000 description 5
- 230000001680 brushing effect Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229920000297 Rayon Polymers 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229920006332 epoxy adhesive Polymers 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a light-emitting component, comprising: the front surface of the bottom substrate is provided with a solid crystal area and a bonding area, wherein the bonding area is correspondingly arranged on the periphery of the solid crystal area; the reflecting cover is arranged in the attaching area, wherein the inner part of the reflecting cover is a curved surface, and the outer part of the reflecting cover is step-shaped; the LED wafer is arranged in the die bonding area; and the packaging colloid is arranged in the reflecting cover. The invention can be compatible with front stickers, side stickers and back stickers, has thinner thickness, can improve the compatibility with client terminals, and has lower development and design cost.
Description
Technical Field
The invention relates to the technical field of chip LEDs, in particular to a light-emitting component.
Background
At present, in the field of infrared products in the market, LENS lamp beads with small angles are mainly used, for example, 1206, 0603, 0805, 3528 and other LENS are used as mainstream products, but the thickness of the product is relatively thick, and the space occupied by the product at an actual client application end is large.
In addition, also there is the infrared product of integrated into one piece's plastics electroplating on the market, about 30 degrees can be accomplished to its angle, but the supporting structure of its development design is complicated, and the cost of manufacture is higher, and the mould need be opened again every change its support of a design, and the cost of mould of opening also can be higher to this small-angle support formula plane infrared lamp pearl is because the limitation of design, can only make the luminous product of just penetrating type, can't accomplish the side and paste luminous and the anti-design structure that sends out light phase compatibility of side.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the art described above. Therefore, an object of the present invention is to provide a light emitting device that is compatible with front, side, and back attachment, has a small thickness, can improve compatibility with a client terminal, and has a low development and design cost.
In order to achieve the above object, an embodiment of the present invention provides a light emitting device, including: the front surface of the bottom substrate is provided with a die bonding area and a bonding area, wherein the bonding area is correspondingly arranged on the periphery of the die bonding area; the reflecting cover is arranged in the attaching area, wherein the inner part of the reflecting cover is a curved surface, and the outer part of the reflecting cover is step-shaped; the LED wafer is arranged in the die bonding area; and the packaging colloid is used for packaging the LED wafer and is arranged in the reflecting cover.
According to the light-emitting component provided by the embodiment of the invention, the LED wafer is arranged on the bottom substrate, the reflection cover is arranged on the periphery of the LED wafer, the outer part of the reflection cover is step-shaped, and then the LED wafer is packaged by arranging the packaging colloid in the reflection cover, so that the front pasting, the side pasting and the back pasting can be compatible, the thickness is thinner, the compatibility with a client terminal can be improved, and the development and design cost is lower.
In addition, the light emitting component according to the above embodiment of the present invention may further have the following additional features:
further, still include a plurality of heat conduction copper posts, wherein, first heat conduction copper post corresponds solid crystal district sets up, second heat conduction copper post and third heat conduction copper post correspond the laminating district set up in first heat conduction copper post both sides.
According to one embodiment of the invention, the base substrate is compatible with front and side attachment.
According to one embodiment of the invention, the stepped exterior of the reflective cover is compatible with a backing.
According to an embodiment of the invention, the light emitting angle of the inner curved surface of the reflection cover ranges from 5 degrees to 60 degrees.
Further, the attaching area comprises a conductive area and a sticky area, wherein the conductive area is provided with conductive adhesive.
Further, the reflection lid adopts full electroplating, wherein, after full electroplating the bottom of reflection lid corresponds the position in gluing the district is equipped with glues viscose.
Further, the bottom substrate is a PCB substrate.
Further, the bottom substrate is a ceramic substrate.
Furthermore, the total thickness range of the reflection cover and the bottom substrate after the reflection cover and the bottom substrate are attached is 0.2-5.0 mm. Drawings
Fig. 1 is a schematic structural diagram of a light-emitting device according to an embodiment of the present invention;
FIG. 2 is a schematic view of the distribution of the positions of the conductive areas and the sticky areas in the base substrate according to one embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a reflective cover according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating the position of the adhesive brushed and adhered in the reflective cover according to an embodiment of the present invention;
fig. 5 is a schematic front view of a light-emitting device according to an embodiment of the present invention;
fig. 6 is a schematic side-view diagram of a light-emitting device according to an embodiment of the invention;
fig. 7 is a schematic back-attachment diagram of a light-emitting device according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a light-emitting device according to an embodiment of the present invention.
As shown in fig. 1, a light emitting device according to an embodiment of the present invention includes a base substrate 10, a reflective cover 20, an LED chip 30, and an encapsulant 40. The front surface of the bottom substrate 10 is provided with a die bonding area and a bonding area, wherein the bonding area is correspondingly arranged on the periphery of the die bonding area; the reflection cover 20 is disposed in the bonding region, wherein the reflection cover 20 has a curved surface inside and a step-shaped outside; the LED wafer 30 is arranged in the die attach region; the encapsulant 40 encapsulates the LED chip 30, and the encapsulant 40 is disposed within the reflective cover 30.
Further, as shown in fig. 1, the light emitting device according to the embodiment of the present invention further includes a plurality of heat conductive copper pillars. The first heat conducting copper column 501 is arranged corresponding to the die attach area, the upper end surface of the first heat conducting copper column can be in contact with the front copper foil of the bottom substrate 10 where the die attach area is located, and the lower end surface of the first heat conducting copper column can be in contact with the back copper foil of the bottom substrate 10 corresponding to the die attach area; the second heat-conducting copper column 502 and the third heat-conducting copper column 503 are disposed at two sides of the first heat-conducting copper column 501 corresponding to the bonding region, and the upper end surfaces thereof can contact with the front copper foil of the bottom substrate 10 where the bonding region is located, and the lower end surfaces thereof can contact with the back copper foil of the bottom substrate 10 corresponding to the bonding region. Through setting up above-mentioned a plurality of heat conduction copper posts, can assist the heat dissipation of LED wafer to can improve the heat dispersion of product.
In another embodiment of the present invention, the plurality of heat conductive copper pillars may be replaced with heat conductive gum, and the placement positions thereof are the same as those of the plurality of heat conductive copper pillars described above, and thus, detailed description thereof will be omitted.
In an embodiment of the present invention, the bottom substrate 10 may be a PCB substrate, and the circuit of the bottom substrate 10 may be designed to be compatible with the pads of the front side and the side, further, as shown in fig. 2, the middle position of the pad of the bottom substrate 10, i.e. the die bonding area, may be provided with the LED chip 30, and the bonding wire may also be performed in the pad of the front side of the bottom substrate 10.
In addition, as shown in fig. 2, a bonding region may be further disposed on the periphery of the die attach region of the bottom substrate 10, and the bonding region may include a conductive region 600 and a sticky region 700. The conductive area 600 may be provided with a conductive adhesive or a conductive silver paste, and the conductive adhesive or the conductive silver paste may be specifically provided by forming a steel mesh.
In one embodiment of the present invention, as shown in fig. 3, the reflective cover 20 may have a bowl shape, and the light-emitting angle of the inner curved surface thereof ranges from 5 to 60 degrees. Further, the reflective cover 20 may be embodied as a plastic bowl-shaped reflective cover, and the surface thereof may be plated with a metal, such as gold, silver, aluminum or chromium, using full plating, so that the surface thereof is gold or silver. The reflection and light receiving efficiency of the reflection cover can be improved through the full-electroplating reflection cover.
Further, as shown in fig. 4, the position 701 of the bottom of the reflective cover 20 after the full plating corresponding to the adhesion area 700 may be provided with an adhesive, such as an epoxy adhesive, which may be specifically provided by opening a steel mesh. The bottom substrate and the reflection cover can be fixedly attached by arranging the adhesive, and the conductive adhesive or the conductive silver paste arranged on the conductive area of the bottom substrate can be electrified and conducted.
In another embodiment of the present invention, the reflective cover 20 may be further coated with metal by sputtering, and the process of the sputtered reflective cover is the same as that of the reflective cover after the full plating, which is not described herein again.
In summary, the reflective cover 20 and the bottom substrate 10 may be aligned and bonded through the bonding region, the LED chip 30 may be die-bonded in the die bonding region of the bottom substrate 10, and then the LED chip 30 may be packaged through the packaging adhesive 40 disposed in the reflective cover 20, so as to obtain the light emitting device of the embodiment of the present invention, and the total thickness of the obtained light emitting device is 0.2-5.0 mm.
It should be further noted that the bottom substrate 10 is compatible with front attachment and side attachment, and the step-shaped outer portion of the reflective cover 20 is compatible with back attachment, so that the light emitting device obtained by the above process according to the embodiment of the present invention can be front attached, side attached, and back attached.
Specifically, as shown in fig. 5, the front patch is: the tin-plated bonding pad a can be connected and conducted with the first reverse copper foil 801 and the third reverse copper foil 803 of the bottom substrate 10 in a tin-plated manner, the cathode of the LED chip 30 can be connected and conducted with the third reverse copper foil 803 through a conductive adhesive, the anode of the LED chip 30 can be connected and conducted with the bonding pad b of the bottom substrate 10 through the bonding wire 900, and the cathode of the LED chip 30 can be connected to the second reverse copper foil 802 of the bottom substrate 10 through the heat-conductive copper column of the bonding pad c of the bottom substrate 10, that is, the first heat-conductive copper column 501, to achieve heat dissipation.
Specifically, as shown in fig. 6, the side sticker is: the tin-plated bonding pad a can be connected and conducted with the first reverse copper foil 801, the second reverse copper foil 802 and the third reverse copper foil 803 of the bottom substrate 10 in a tin-plated manner, the negative electrode of the LED chip 30 can be conducted with the third reverse copper foil 803 through a conductive adhesive, and the positive electrode of the LED chip 30 can be conducted with the bonding pad b of the bottom substrate 10 through a bonding wire 900, wherein the bonding pad c of the bottom substrate 10 can be used for fixing the LED chip 30 in a tin-plated manner and dissipating heat, and both the bonding pad c and the bonding pad b of the bottom substrate 10 can be used for conducting and dissipating heat.
Specifically, as shown in fig. 7, the back patch is: the tin-plated pad a may be connected and conducted with the first front copper foil 804 and the second front copper foil 805 outside the reflective cover 20 by tin plating, and the negative electrode of the LED chip 30 may be connected and conducted with the pad on the back side, i.e., the pad d of the bottom substrate 10, via the conductive paste, while the positive electrode of the LED chip 30 may be connected and conducted with the pad on the back side, i.e., the pad b of the bottom substrate 10, via the bonding wire 900 to form a via.
The manufacturing process of the light-emitting component provided by the embodiment of the invention comprises the following steps: 1, die bonding: attaching the LED wafer to the bottom substrate through die attach adhesive; 2, baking: fixing the LED wafer on the bottom substrate by baking; 3, welding wires: connecting and conducting the electrode of the LED wafer on the bottom substrate through a gold wire; 4, brushing adhesive conductive adhesive, and brushing conductive silver paste on the conductive area of the bottom substrate; 5, brushing adhesive, namely brushing epoxy adhesive resin glue on the position, corresponding to the bottom substrate adhesive area, of the bottom of the electroplating reflection cover; 6, laminating: aligning and attaching the electroplating reflection cover and the bottom substrate; 7, baking: curing the epoxy viscose glue and mercury glue by baking; 8, dispensing: packaging the chip in a reflection cover of the product by using epoxy resin or silica gel packaging glue; 9, baking: curing the packaging adhesive by baking; and 10, cutting the product into designed finished product size.
According to the light-emitting component provided by the embodiment of the invention, the LED wafer is arranged on the bottom substrate, the reflection cover is arranged on the periphery of the LED wafer, the outer part of the reflection cover is step-shaped, and then the LED wafer is packaged by arranging the packaging colloid in the reflection cover, so that the front pasting, the side pasting and the back pasting can be compatible, the thickness is thinner, the compatibility with a client terminal can be improved, and the development and design cost is lower.
In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. The meaning of "plurality" is two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. A light-emitting component, comprising:
the front surface of the bottom substrate is provided with a die bonding area and a bonding area, wherein the bonding area is correspondingly arranged on the periphery of the die bonding area;
the reflecting cover is arranged in the attaching area, wherein the inner part of the reflecting cover is a curved surface, and the outer part of the reflecting cover is step-shaped;
the LED wafer is arranged in the die bonding area;
and the packaging colloid is used for packaging the LED wafer and is arranged in the reflecting cover.
2. A light-emitting component as claimed in claim 1, further comprising a plurality of heat-conducting copper pillars, wherein a first heat-conducting copper pillar is disposed corresponding to the die attach region, and a second heat-conducting copper pillar and a third heat-conducting copper pillar are disposed on two sides of the first heat-conducting copper pillar corresponding to the attachment region.
3. A light emitting component as claimed in claim 2, wherein the base substrate is compatible with a front mount and a side mount.
4. A light emitting component as claimed in claim 3, wherein the stepped outer portion of the reflective cover is compatible with a backing.
5. A light-emitting component as claimed in claim 4, wherein the light-emitting angle of the inner curved surface of the reflective cover is in a range of 5 to 60 degrees.
6. A light emitting component as claimed in claim 5, wherein the attachment region comprises a conductive region and a sticky region, wherein the conductive region is provided with a conductive adhesive.
7. The light-emitting component as claimed in claim 6, wherein the reflective cover is fully plated, and an adhesive is disposed at a position corresponding to the adhesive region at the bottom of the fully plated reflective cover.
8. A light emitting component as claimed in claim 7, wherein the bottom substrate is a PCB substrate.
9. A light emitting component as claimed in claim 8, wherein the base substrate is a ceramic substrate.
10. A light-emitting component as claimed in claim 9, wherein a total thickness of the attached reflective cover and the bottom substrate is in a range of 0.2 to 5.0 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010246742.8A CN111312884A (en) | 2020-03-31 | 2020-03-31 | Light-emitting component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010246742.8A CN111312884A (en) | 2020-03-31 | 2020-03-31 | Light-emitting component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111312884A true CN111312884A (en) | 2020-06-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010246742.8A Pending CN111312884A (en) | 2020-03-31 | 2020-03-31 | Light-emitting component |
Country Status (1)
| Country | Link |
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| CN (1) | CN111312884A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007173547A (en) * | 2005-12-22 | 2007-07-05 | Toshiba Lighting & Technology Corp | Light emitting device |
| CN102769092A (en) * | 2012-07-16 | 2012-11-07 | 桂林电子科技大学 | Wafer-level high-power light-emitting diode (LED) packaging structure based on through-silicon-via technology and packaging method of structure |
| CN103557464A (en) * | 2013-11-15 | 2014-02-05 | 东莞市驰明电子科技有限公司 | Multi-surface-mounting type LED bracket, LED lamp and LED luminaire |
| CN107527978A (en) * | 2017-08-15 | 2017-12-29 | 江苏稳润光电科技有限公司 | A kind of high-power ultraviolet LED Vacuum Package device and its manufacture method |
| CN110635010A (en) * | 2018-10-18 | 2019-12-31 | 瑞识科技（深圳）有限公司 | LED light source device |
| CN211789083U (en) * | 2020-03-31 | 2020-10-27 | 苏州雷霆光电科技有限公司 | Light-emitting component |
-
2020
- 2020-03-31 CN CN202010246742.8A patent/CN111312884A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007173547A (en) * | 2005-12-22 | 2007-07-05 | Toshiba Lighting & Technology Corp | Light emitting device |
| CN102769092A (en) * | 2012-07-16 | 2012-11-07 | 桂林电子科技大学 | Wafer-level high-power light-emitting diode (LED) packaging structure based on through-silicon-via technology and packaging method of structure |
| CN103557464A (en) * | 2013-11-15 | 2014-02-05 | 东莞市驰明电子科技有限公司 | Multi-surface-mounting type LED bracket, LED lamp and LED luminaire |
| CN107527978A (en) * | 2017-08-15 | 2017-12-29 | 江苏稳润光电科技有限公司 | A kind of high-power ultraviolet LED Vacuum Package device and its manufacture method |
| CN110635010A (en) * | 2018-10-18 | 2019-12-31 | 瑞识科技（深圳）有限公司 | LED light source device |
| CN211789083U (en) * | 2020-03-31 | 2020-10-27 | 苏州雷霆光电科技有限公司 | Light-emitting component |
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