CN111261477B - Double-outlet parallel lens - Google Patents
Double-outlet parallel lens Download PDFInfo
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- CN111261477B CN111261477B CN201811463631.1A CN201811463631A CN111261477B CN 111261477 B CN111261477 B CN 111261477B CN 201811463631 A CN201811463631 A CN 201811463631A CN 111261477 B CN111261477 B CN 111261477B
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- parallel lens
- magnetic pole
- ion
- exit
- magnetic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/14—Lenses magnetic
- H01J37/141—Electromagnetic lenses
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a double-outlet parallel lens, which comprises: the magnetic yoke (1), the magnetic pole (2), the coil (3) and the vacuum box (4). The parallel lens magnetic pole surface is provided with an inlet and two outlets, the shape of the inlet magnetic pole sideline is an arc, and the shape of the two outlet sidelines is a curve with different curvatures. When certain current is applied to the coil, charged ion beams enter the parallel lens from the inlet at a certain angle, and exit at the same angle through different path lengths in the magnetic field, so that the aim of parallelizing the ion beams is fulfilled. The two outlets of the magnetic pole surface can change the outlet direction of the ion beam by changing the current direction of the parallel lens, thereby realizing the parallelization of the ion beam in two directions. In the ion implanter, the action of the parallel lens is to deflect charged ions at different angles in a magnetic field through the magnetic field force generated by the magnetic field, so that ion beams at different angles are parallelized and implanted into a wafer at the same angle. The general parallel lens has only one deflection direction and can only correspond to one target chamber. The parallel lens disclosed by the invention can deflect the ion beam into different target chambers by changing the direction of current, thereby improving the ion implantation capacity. The invention relates to an ion implantation device, belonging to the field of semiconductor manufacturing.
Description
Technical Field
The present invention relates to integrated circuit fabrication equipment, i.e., ion implanters, and more particularly to a dual exit parallel lens for an ion implanter.
Background
With the improvement of integrated circuit technology, higher requirements are put forward on ion implantation equipment; with the development of advanced processes, the requirements for the angle and parallelism of ion implantation wafers are higher, and the requirements for ion implantation productivity are also higher.
The invention provides a double-outlet parallel lens which can provide parallel injection beams for two target chambers under the condition of ensuring the beam parallelism and the deflection angle, and improves the capacity of an ion implanter.
Disclosure of Invention
The invention discloses a double-outlet parallel lens, which has the function that an ion beam entering the double-outlet parallel lens deflects different angles through a designed magnetic pole shape in the working process of an ion implanter, so that the angles are consistent when the ion beam is emitted.
A typical parallel lens has only one entrance and exit, which corresponds to one target stage operation. The invention discloses a double-outlet parallel lens, which has a magnetic pole structure in bilateral symmetry design and is provided with an inlet and two outlets. By changing the current direction, the ion beam can be emitted from the same outlet, thereby simultaneously serving two target table stations and improving the capacity of the ion implanter.
The invention is realized by the following technical scheme:
1. a dual exit parallel lens comprising: the magnetic yoke (1), the magnetic pole (2), the coil (3) and the vacuum box (4). The parallel lens magnetic pole face is provided with an inlet and two outlets, the shape of the inlet magnetic pole side line is an arc, the shape of the two outlet side lines is a curve with different curvatures, after a coil is added with a certain current, charged ion beams enter the parallel lens at a certain angle, and the charged ion beams can be emitted at the same angle through different path lengths in a magnetic field, so that the purpose of ion beam parallelization is achieved. The two outlets of the magnetic pole surface can change the outlet direction of the ion beam by changing the current direction of the parallel lens, thereby realizing the parallelization of the ion beam in two directions.
2. A double exit parallel lens as claimed in claim 1, wherein the shape of the magnetic pole is a symmetrical structure, the magnetic pole has an entrance side and two exit sides, and the direction of the magnetic field can be changed by changing the current of the parallel lens, so that the ion beam can exit from the two exit sides respectively to reach different target chamber regions for implantation.
3. A dual exit parallel lens as in claim 1, wherein the entrance edge is in the shape of an arc of a circle having a radius R.
4. The lens of claim 1, wherein the two exit edges are curved, and the curvature of the curve is designed to ensure that the ion beam exits at the same angle after passing through the lens.
The invention has the following remarkable advantages:
1. small volume and light weight.
2. The two outlets are provided, and the two outlets can simultaneously correspond to 2 target tables, and the capacity is twice of that of a single-outlet parallel lens.
Drawings
FIG. 1 Assembly of a double exit parallel lens
FIG. 2 name diagram of a two-outlet parallel lens component
FIG. 3 magnetic pole schematic diagram of a dual exit parallel lens
FIG. 4 is a simulation result of magnitude of forward current applied to a dual-exit parallel lens
FIG. 5 is a simulation result of magnitude of reverse current applied to a dual-exit parallel lens
Detailed Description
The present invention will be further described with reference to fig. 1, fig. 2, fig. 3, fig. 4, and fig. 5, but the present invention is not limited thereto.
Referring to fig. 1, 2, 3, 4, 5, a dual exit parallel lens, comprising: the lens comprises a magnetic yoke (1), magnetic poles (2), coils (3) and a vacuum box (4), wherein an inlet and two outlets are arranged on a magnetic pole surface of the parallel lens, the shape of the sideline of the inlet magnetic pole is an arc, and the shape of the sideline of the two outlets is a curve with different curvatures. When certain current is applied to the coil, charged ion beams enter the parallel lens at a certain angle, and exit at the same angle through different path lengths in the magnetic field, so that the aim of parallelizing the ion beams is fulfilled. The two outlets of the magnetic pole surface can change the outlet direction of the ion beam by changing the current direction of the parallel lens, thereby realizing the parallelization of the ion beam in two directions.
In this embodiment, a magnetic pole with a symmetrical structure is adopted, the magnetic pole has an inlet side and two outlet sides, and the direction of the magnetic field can be changed by changing the current of the parallel lens, so that the ion beams respectively exit from the two outlets to achieve different target chamber areas for injection.
In this embodiment, the parallel lens entrance borderline is shaped as a circular arc with a radius R.
In the embodiment, two outlet side lines of the parallel lens are curves, and the curvature of the curves is specially designed, so that the ion beams can be ensured to be emitted at the same angle after passing through the parallel lens.
The contents of the present patent have been described in detail with reference to specific embodiments thereof. Any obvious modifications to the disclosure herein disclosed which do not depart from the spirit of the disclosure herein will be readily apparent to those skilled in the art as a violation of the disclosure and the pertinent legal responsibility will be afforded thereto.
Claims (2)
1. A dual exit parallel lens comprising: the magnetic yoke (1), the magnetic pole (2), the coil (3) and the vacuum box (4); the magnetic pole (2) is positioned in the middle, the coil (3) surrounds the outer side of the magnetic pole (2), the magnetic yoke (1) is positioned on the outer side of the coil (3), and the vacuum box (4) is positioned below the magnetic pole (2); the method is characterized in that: the parallel lens magnetic pole surface is provided with an inlet and two outlets, the shape of the inlet magnetic pole sideline is an arc, and the shape of the two outlet sidelines is a curve with different curvatures; when certain current is applied to the coil, charged ion beams enter the parallel lens at a certain angle, and exit at the same angle through different path lengths in the magnetic field, so that the aim of parallelizing the ion beams is fulfilled; the two outlets of the magnetic pole surface can change the outlet direction of the ion beam by changing the current direction of the parallel lens, thereby realizing the parallelization of the ion beam in two directions.
2. A double exit parallel lens as claimed in claim 1, wherein the shape of the magnetic pole is a symmetrical structure, the magnetic pole has an entrance side and two exit sides, and the direction of the magnetic field can be changed by changing the current direction of the parallel lens, so that the ion beam can exit from the two exit sides respectively to reach different target chamber regions for implantation.
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CN201811463631.1A CN111261477B (en) | 2018-12-03 | 2018-12-03 | Double-outlet parallel lens |
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CN201811463631.1A CN111261477B (en) | 2018-12-03 | 2018-12-03 | Double-outlet parallel lens |
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CN111261477A CN111261477A (en) | 2020-06-09 |
CN111261477B true CN111261477B (en) | 2022-08-02 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006351312A (en) * | 2005-06-15 | 2006-12-28 | Ulvac Japan Ltd | Ion implanter |
CN1979749A (en) * | 2005-12-05 | 2007-06-13 | 北京中科信电子装备有限公司 | Uniform magnetic-field parallel beam lens system |
CN1979750A (en) * | 2005-12-05 | 2007-06-13 | 北京中科信电子装备有限公司 | Non-uniform magnetic-field parallel-beam lens system |
JP2008243765A (en) * | 2007-03-29 | 2008-10-09 | Mitsui Eng & Shipbuild Co Ltd | Ion implantation apparatus |
CN103107056A (en) * | 2011-11-10 | 2013-05-15 | 北京中科信电子装备有限公司 | Broadband ion beam analyzer |
CN104867803A (en) * | 2014-09-11 | 2015-08-26 | 中国电子科技集团公司第四十八研究所 | 30 degree parallel lens used for ion implanter |
CN106653530A (en) * | 2015-11-04 | 2017-05-10 | 北京中科信电子装备有限公司 | Novel broadband ion beam adjusting lens |
CN107180736A (en) * | 2017-06-16 | 2017-09-19 | 上海集成电路研发中心有限公司 | A kind of devices and methods therefor for lifting injection ion collimation |
CN107221485A (en) * | 2017-06-02 | 2017-09-29 | 东莞帕萨电子装备有限公司 | A kind of ion beam current adjusting means |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7528390B2 (en) * | 2006-09-29 | 2009-05-05 | Axcelis Technologies, Inc. | Broad beam ion implantation architecture |
US7635850B2 (en) * | 2006-10-11 | 2009-12-22 | Nissin Ion Equipment Co., Ltd. | Ion implanter |
US7807983B2 (en) * | 2007-01-12 | 2010-10-05 | Varian Semiconductor Equipment Associates, Inc. | Technique for reducing magnetic fields at an implant location |
JP6086819B2 (en) * | 2013-05-29 | 2017-03-01 | 住友重機械イオンテクノロジー株式会社 | High energy ion implanter |
-
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- 2018-12-03 CN CN201811463631.1A patent/CN111261477B/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006351312A (en) * | 2005-06-15 | 2006-12-28 | Ulvac Japan Ltd | Ion implanter |
CN1979749A (en) * | 2005-12-05 | 2007-06-13 | 北京中科信电子装备有限公司 | Uniform magnetic-field parallel beam lens system |
CN1979750A (en) * | 2005-12-05 | 2007-06-13 | 北京中科信电子装备有限公司 | Non-uniform magnetic-field parallel-beam lens system |
JP2008243765A (en) * | 2007-03-29 | 2008-10-09 | Mitsui Eng & Shipbuild Co Ltd | Ion implantation apparatus |
CN103107056A (en) * | 2011-11-10 | 2013-05-15 | 北京中科信电子装备有限公司 | Broadband ion beam analyzer |
CN104867803A (en) * | 2014-09-11 | 2015-08-26 | 中国电子科技集团公司第四十八研究所 | 30 degree parallel lens used for ion implanter |
CN106653530A (en) * | 2015-11-04 | 2017-05-10 | 北京中科信电子装备有限公司 | Novel broadband ion beam adjusting lens |
CN107221485A (en) * | 2017-06-02 | 2017-09-29 | 东莞帕萨电子装备有限公司 | A kind of ion beam current adjusting means |
CN107180736A (en) * | 2017-06-16 | 2017-09-19 | 上海集成电路研发中心有限公司 | A kind of devices and methods therefor for lifting injection ion collimation |
Non-Patent Citations (1)
Title |
---|
平行束磁透镜的研究;胡振东,孙雪平,彭立波;《电子工业专用设备》;20160720;第37-39页 * |
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