CN110993723A - Preparation method of high-quality photovoltaic crystalline silicon cell - Google Patents
Preparation method of high-quality photovoltaic crystalline silicon cell Download PDFInfo
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 237
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 237
- 239000010703 silicon Substances 0.000 claims abstract description 237
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 62
- 238000005530 etching Methods 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 37
- 238000005406 washing Methods 0.000 claims abstract description 30
- 238000001035 drying Methods 0.000 claims abstract description 29
- 230000005540 biological transmission Effects 0.000 claims abstract description 27
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 238000004806 packaging method and process Methods 0.000 claims abstract description 11
- 238000007650 screen-printing Methods 0.000 claims abstract description 11
- 238000012360 testing method Methods 0.000 claims abstract description 11
- 239000002253 acid Substances 0.000 claims abstract description 10
- 239000003513 alkali Substances 0.000 claims abstract description 10
- 230000003472 neutralizing effect Effects 0.000 claims abstract description 3
- 235000012431 wafers Nutrition 0.000 claims description 194
- 239000008367 deionised water Substances 0.000 claims description 32
- 229910021641 deionized water Inorganic materials 0.000 claims description 32
- 230000033001 locomotion Effects 0.000 claims description 30
- 238000007654 immersion Methods 0.000 claims description 19
- 229910017604 nitric acid Inorganic materials 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 10
- 229910021426 porous silicon Inorganic materials 0.000 claims description 10
- 239000007921 spray Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000013467 fragmentation Methods 0.000 abstract 1
- 238000006062 fragmentation reaction Methods 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 25
- 238000005507 spraying Methods 0.000 description 13
- 230000009286 beneficial effect Effects 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 210000005056 cell body Anatomy 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention discloses a preparation method of a high-quality photovoltaic crystalline silicon battery piece, which is prepared by a method of texturing → diffusion → laser SE → etching → hot oxygen → ALD → PE front and back coating → silk screen printing → test sorting → packaging and warehousing, wherein the etching is carried out by an etching method of etching a groove, washing a water tank, neutralizing an alkali tank, washing the water tank, removing impurities of an acid tank, washing the water tank, drying, automatic blanking, turning and lifting, the turning and lifting distance of a transmission belt is limited to 0.5-1.5mm, the speed of the transmission belt is accelerated from zero to 3-5m/min after the silicon piece contacts the transmission belt, so that the friction between the transmission belt and the front of the silicon piece in the etching process is effectively reduced, the damage of the silicon piece is reduced, the normal production efficiency of the silicon piece is not influenced, and the blocking rate and the fragmentation rate of the silicon piece are also effectively reduced, the quality of the silicon chip is improved.
Description
Technical Field
The invention relates to the technical field of new energy photovoltaic crystalline silicon batteries, in particular to a preparation method of a high-quality photovoltaic crystalline silicon battery piece.
Background
With the rapid approach of photovoltaic flat price internet access, the solar cell becomes a milestone in the global solar industry in 2019, the development cost is continuously reduced, huge opportunities are created for us, meanwhile, the requirement on a cell with high conversion efficiency is vigorous, the conversion efficiency of the cell is continuously improved, the direction and the power of the continuous advancing of the photovoltaic industry are adopted, the efficiency is improved by 0.1% every time, the control of the whole production line needs to be improved by one level, and the silicon wafer needs to be more stable and cleaner in the automatic transmission process.
At present, the efficiency of the single crystal PERC is continuously improved by continuously optimizing and improving the process, but the efficiency is improved, and simultaneously, a plurality of quality problems are brought. The current serious quality problems in the industry are the troublesome problems of round spots, black spots, scratches, fog pollution, grid breakage, overprinting pollution and the like. Especially, the proportion of the round spot pollution is very low and can be controlled within 0.05% before the PERC superposition thermal oxidation process, and the proportion is increased to 0.5% after the thermal oxidation process, so that the yield of the battery piece is seriously influenced. Most of the round spot pollution in the industry is in the stage of pollution production, such as unqualified workshop cleanliness, production of blowing polluted silicon wafers, pollution of etching liquid medicine and PE dust pollution, most of the pollution is attributed to impurity polluted wafers to form a composite center, so that minority carriers are seriously compounded at the polluted positions to pollute the round spots.
Data examined through a large number of experiments show that most of the round spots are caused by belt friction at a fixed position during manufacturing, particularly after a hot oxygen procedure is superposed. Because the thermal oxidation process is to plate a very thin silicon dioxide layer (2-3nm) at high temperature (above 600 ℃), the requirement on the flatness of the etched diffusion surface is very high. At present, after etching and back polishing in the industry, a front contact belt is selected to avoid belt printing, the front contact belt easily causes serious friction defects when the etching and blanking automatic steering part is lifted, and the defects are aggravated after high-temperature hot oxygen to form frictional round spots. At present, the lifting distance of a lifting belt at a conventional turning position in the industry is over 1cm, and the lifting belt is in high-speed uniform linear motion before contacting a sheet. When the sheet reaches the lifting position: a. lifting and lowering in a short time up to 1cm or more requires a very high speed while hitting the sheet at this speed (vertical collision), b the lifting belt runs at a constant speed before contacting the sheet, and a very large relative friction force (horizontal friction) is generated to the sheet immediately after contacting the belt. The damage of the front side of the silicon wafer caused by vertical collision and horizontal friction is directly caused, and the circular spot is formed after the hot oxidation.
Therefore, it is an urgent need to solve the problem of the art to provide a preparation method capable of effectively improving the quality of the photovoltaic crystalline silicon cell.
Disclosure of Invention
The invention aims to solve at least one of the technical problems in the prior art to a certain extent, and provides a preparation method of a photovoltaic crystalline silicon cell piece, which can effectively improve the quality of the photovoltaic crystalline silicon cell piece.
In order to achieve the purpose, the invention adopts the following technical scheme:
the preparation method of the high-quality photovoltaic crystalline silicon cell slice is prepared by the method of texturing → diffusion → laser SE → etching → hot oxygen → ALD → PE front and back coating → silk screen printing → test sorting → packaging and warehousing, and the etching comprises the following steps:
the method comprises the following steps: placing the silicon chip in an etching groove, and utilizing HNO3Etching the back surface of the silicon wafer by HF;
step two: placing the silicon wafer treated in the step one in a water tank, washing the silicon wafer by using deionized water, and removing residual HNO on the silicon wafer3/HF；
Step three: putting the silicon slice treated in the step two into an alkali tank, and neutralizing residual HNO on the silicon slice by using KOH3HF and partially porous silicon;
step four: placing the silicon wafer treated in the third step into a water tank, and washing the silicon wafer by using deionized water to remove the residual KOH on the silicon wafer;
step five: placing the silicon wafer treated in the fourth step into an acid tank, and removing phosphorosilicate glass remained on the silicon wafer in the diffusion process by using HF;
step six: placing the silicon wafer treated in the fifth step into a water tank, and washing the silicon wafer by using deionized water to remove residual HF on the silicon wafer;
step seven: drying the silicon wafer processed in the step six;
step eight: placing the silicon wafer treated in the step seven on a transmission belt, enabling the front surface of the silicon wafer to face downwards to contact with the belt, and increasing the speed of the belt from zero to working speed after the silicon wafer contacts with the belt;
step nine: making the conveying belt in the step eight move longitudinally for a certain time, then moving transversely, and making the conveying belt turn and rise by 0.5-1.5 mm;
step ten: the longitudinal tongue was activated and the silicon wafers were collected.
According to the technical scheme, compared with the prior art, the preparation method of the high-quality photovoltaic crystalline silicon battery piece can effectively overcome the problem that the spot generation rate of the photovoltaic crystalline silicon battery piece is high in the prior art, combines impulse, power and acceleration theorems in physics, by reducing the lifting distance of the transmission belt in the turning lifting and simultaneously accelerating the transmission belt from zero speed to a certain speed after contacting the silicon chip, thereby reducing the instant friction force of the contact between the transmission belt and the silicon wafer, reducing the damage to the silicon wafer, reducing the friction of the transmission belt on the front surface of the silicon wafer without influencing the productivity of the silicon wafer, reducing the blocking rate and the fragment rate in the preparation process of the photovoltaic crystalline silicon cell, thereby effectively improving the product quality of the photovoltaic crystal silicon cell on the basis of ensuring the production efficiency.
Further, HNO described in the step one3The amount of HF etched on the silicon wafer is 0.2-0.5g, and the weight of the silicon wafer is 9-11 g.
The technical scheme has the beneficial effects that the etching removal of 0.2-0.5g of the back surface of the silicon wafer is favorable for achieving the effect of back surface polishing of the silicon wafer, so that the AlD is favorable for forming flat Al on the back surface of the silicon wafer in the later-stage process2O3Layer(s)
Furthermore, the deionized water used in the second step, the fourth step and the sixth step is in an immersion type, and the circulating flow of the deionized water is 50-60L/min; the KOH used in the third step is in a spray type, the mass concentration of the KOH solution is 4-6%, and the spray flow of the KOH solution is 15-25L/min; in the fifth step, the form of the HF is immersed, the mass concentration of the HF solution is 10-16%, and the circulating flow rate of the HF solution is 100L/min.
The technical scheme has the beneficial effects that chemicals attached to the silicon wafer by the previous tank body can be effectively washed away by circularly washing the silicon wafer by using the immersed deionized water, so that the chemicals with the previous tank are prevented from generating harmful chemical reactions in the whole process after reaching the next chemical tank along with the silicon wafer; KOH can effectively neutralize HF/HNO on silicon chip3Removing residual porous silicon in the previous working procedure; the HF can effectively neutralize KOH on the silicon wafer and remove phosphorosilicate glass formed in the previous process, so that the surface of the silicon wafer is clean and free from foreign matter residues, and only PN junctions on the front surface of the silicon wafer are reserved.
Further, in the seventh step, a dryer is selected to dry the silicon wafer, the drying time is 25-30s, and the drying temperature is 55-65 ℃.
The silicon wafer drying device has the beneficial effects that the silicon wafer surface can be dried, so that no liquid residue exists on the silicon wafer surface.
And further, the working speed of the transmission belt in the step eight is 3-5 m/min.
The beneficial effect who adopts above-mentioned technical scheme to produce is, can make the transmission belt link up the host computer platform cell body, realizes automatic operation, matches the productivity, avoids the emergence of the jam piece condition simultaneously.
Further, the speed of the longitudinal movement of the transmission belt in the ninth step is 1.5-3.5m/min, and the time of the longitudinal movement is 10-20 s; in the ninth step, the transverse movement speed of the transmission belt is 2.5-4.5m/min, and the transverse movement time is 10-15 s.
The silicon wafer conveying device has the beneficial effects that after passing through the longitudinal belt, the silicon wafer is conveyed through the transverse belts on the two sides respectively, so that the requirements of connecting the front belt and the rear belt and matching productivity are met.
Furthermore, in the step ten, the speed of the longitudinal tongue is 4-6m/min, and the time is 5-10 s.
The beneficial effects that adopt above-mentioned technical scheme to produce are that, can make vertical tongue finally get into the basket of flowers automatically and link up with the basket of flowers, realize the automation mechanized operation of vertical tongue, and make the functioning speed of vertical tongue very fast, avoid the emergence of the jam condition, improve the preparation efficiency of silicon chip.
Detailed Description
The following examples are illustrative of the present invention and are not to be construed as limiting thereof.
Example 1
The embodiment discloses a preparation method of a high-quality photovoltaic crystalline silicon battery piece, which is prepared by a method of texturing → diffusion → laser SE → etching → hot oxygen → ALD → PE front and back coating → silk screen printing → test sorting → packaging and warehousing, wherein the etching comprises the following steps:
the method comprises the following steps: placing the silicon chip in an etching groove, and utilizing HNO3HF etching the back of the silicon wafer, wherein the weight of the silicon wafer is 9g, and HNO is added3The corrosion amount of HF to the silicon chip is 0.3 g;
step two: placing the silicon wafer treated in the step one in a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 50L/min to remove residual HNO on the silicon wafer3/HF；
Step three: placing the silicon wafer treated in the step two in an alkali tank, spraying the silicon wafer by using KOH solution with the solution concentration of 4% and the spraying flow of 15L/min to neutralize HNO remained on the silicon wafer3HF and partially porous silicon;
step four: placing the silicon wafer treated in the third step into a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 55L/min to remove the residual KOH on the silicon wafer;
step five: placing the silicon wafer treated in the fourth step into an acid tank, and removing phosphorosilicate glass remained on the silicon wafer in the diffusion process by utilizing an HF solution with the solution concentration of 10% and the circulation flow of 100L/min;
step six: placing the silicon wafer treated in the fifth step into a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 52L/min to remove residual HF on the silicon wafer;
step seven: drying the silicon wafer processed in the step six by using a dryer, wherein the drying temperature is 55 ℃, and the drying time is 30 s;
step eight: placing the silicon wafer treated in the step seven on a transmission belt, enabling the front surface of the silicon wafer to face downwards to contact with the belt, and increasing the speed of the belt from zero to 4.5m/min after the silicon wafer contacts with the belt;
step nine: enabling the conveying belt in the step eight to longitudinally move for 15s at the speed of 2.5m/min, then turning into transverse movement, enabling the transverse movement speed to be 3m/min and the transverse movement time to be 10s, and enabling the conveying belt to turn and rise for 1 mm;
step ten: and (5) keeping the longitudinal tongue speed of 5m/min for 5s, and collecting silicon wafers.
Example 2
The embodiment discloses a preparation method of a high-quality photovoltaic crystalline silicon battery piece, which is prepared by a method of texturing → diffusion → laser SE → etching → hot oxygen → ALD → PE front and back coating → silk screen printing → test sorting → packaging and warehousing, wherein the etching comprises the following steps:
the method comprises the following steps: placing the silicon chip in an etching groove, and utilizing HNO3HF etching the back of the silicon wafer, wherein the weight of the silicon wafer is 10g, and HNO is added3The corrosion amount of HF to the silicon chip is 0.4 g;
step two: placing the silicon wafer treated in the step one in a water tank, and soaking the silicon wafer by using deionized water with the circulation flow of 55L/minWashing to remove residual HNO on the silicon wafer3/HF；
Step three: placing the silicon wafer treated in the step two in an alkali tank, and spraying the silicon wafer by using a KOH solution with the solution concentration of 5% and the spraying flow of 20L/min to neutralize HNO remained on the silicon wafer3HF and partially porous silicon;
step four: placing the silicon wafer treated in the third step into a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 57L/min to remove the residual KOH on the silicon wafer;
step five: placing the silicon wafer treated in the fourth step into an acid tank, and removing phosphorosilicate glass remained on the silicon wafer in the diffusion process by utilizing an HF solution with the solution concentration of 13% and the circulation flow of 100L/min;
step six: placing the silicon wafer treated in the fifth step into a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 55L/min to remove residual HF on the silicon wafer;
step seven: drying the silicon wafer processed in the step six by using a dryer, wherein the drying temperature is 58 ℃, and the drying time is 28 s;
step eight: placing the silicon wafer treated in the step seven on a transmission belt, enabling the front surface of the silicon wafer to face downwards to contact with the belt, and increasing the speed of the belt from zero to 4.5m/min after the silicon wafer contacts with the belt;
step nine: enabling the conveying belt in the step eight to longitudinally move for 13s at the speed of 2.8m/min, then turning into transverse movement, enabling the transverse movement speed to be 3.5m/min, enabling the transverse movement time to be 12s, and enabling the conveying belt to turn and rise by 1 mm;
step ten: and (5) keeping the longitudinal tongue speed of 6m/min for 6s, and collecting silicon wafers.
Example 3
The embodiment discloses a preparation method of a high-quality photovoltaic crystalline silicon battery piece, which is prepared by a method of texturing → diffusion → laser SE → etching → hot oxygen → ALD → PE front and back coating → silk screen printing → test sorting → packaging and warehousing, wherein the etching comprises the following steps:
the method comprises the following steps: placing a silicon waferIn the etching groove, HNO is utilized3HF etching the back of the silicon wafer, wherein the weight of the silicon wafer is 11g, and HNO3The corrosion amount of HF to the silicon chip is 0.5 g;
step two: placing the silicon wafer treated in the step one in a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 60L/min to remove residual HNO on the silicon wafer3/HF；
Step three: placing the silicon wafer treated in the step two in an alkali tank, spraying the silicon wafer by using KOH solution with the solution concentration of 6 percent and the spraying flow of 25L/min to neutralize HNO remained on the silicon wafer3HF and partially porous silicon;
step four: placing the silicon wafer treated in the third step into a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 60L/min to remove the residual KOH on the silicon wafer;
step five: placing the silicon wafer treated in the fourth step into an acid tank, and removing phosphorosilicate glass remained on the silicon wafer in the diffusion process by utilizing an HF solution with the solution concentration of 16% and the circulation flow of 100L/min;
step six: placing the silicon wafer treated in the fifth step into a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 55L/min to remove residual HF on the silicon wafer;
step seven: drying the silicon wafer processed in the step six by using a dryer, wherein the drying temperature is 65 ℃, and the drying time is 26 s;
step eight: placing the silicon wafer treated in the step seven on a transmission belt, enabling the front surface of the silicon wafer to face downwards to contact with the belt, and increasing the speed of the belt from zero to 4.5m/min after the silicon wafer contacts with the belt;
step nine: enabling the conveying belt in the step eight to longitudinally move for 10s at the speed of 3.5m/min, then turning into transverse movement, enabling the transverse movement speed to be 4.5m/min, enabling the transverse movement time to be 10s, and enabling the conveying belt to turn and rise by 1 mm;
step ten: and (5) keeping the longitudinal tongue speed of 4m/min for 8s, and collecting silicon wafers.
Example 4
The embodiment discloses a preparation method of a high-quality photovoltaic crystalline silicon battery piece, which is prepared by a method of texturing → diffusion → laser SE → etching → hot oxygen → ALD → PE front and back coating → silk screen printing → test sorting → packaging and warehousing, wherein the etching comprises the following steps:
the method comprises the following steps: placing the silicon chip in an etching groove, and utilizing HNO3HF etching the back of the silicon wafer, wherein the weight of the silicon wafer is 10g, and HNO is added3The corrosion amount of HF to the silicon chip is 0.3 g;
step two: placing the silicon wafer treated in the step one in a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 56L/min to remove residual HNO on the silicon wafer3/HF；
Step three: placing the silicon wafer treated in the step two in an alkali tank, spraying the silicon wafer by using KOH solution with the solution concentration of 6 percent and the spraying flow of 20L/min to neutralize HNO remained on the silicon wafer3HF and partially porous silicon;
step four: placing the silicon wafer treated in the third step into a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 60L/min to remove the residual KOH on the silicon wafer;
step five: placing the silicon wafer treated in the fourth step into an acid tank, and removing phosphorosilicate glass remained on the silicon wafer in the diffusion process by utilizing an HF solution with the solution concentration of 14% and the circulation flow of 100L/min;
step six: placing the silicon wafer treated in the fifth step into a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 58L/min to remove residual HF on the silicon wafer;
step seven: drying the silicon wafer processed in the step six by using a dryer, wherein the drying temperature is 60 ℃, and the drying time is 30 s;
step eight: placing the silicon wafer treated in the step seven on a transmission belt, enabling the front surface of the silicon wafer to face downwards to contact with the belt, and increasing the speed of the belt from zero to 4.5m/min after the silicon wafer contacts with the belt;
step nine: enabling the conveying belt in the step eight to longitudinally move for 20s at the speed of 2m/min, then switching to transverse movement, enabling the transverse movement speed to be 4m/min and the transverse movement time to be 10s, and enabling the conveying belt to be turned and lifted for 1 mm;
step ten: the longitudinal tongue speed of 4m/min is kept for 10s, and silicon wafers are collected.
Example 5
The embodiment discloses a preparation method of a high-quality photovoltaic crystalline silicon battery piece, which is prepared by a method of texturing → diffusion → laser SE → etching → hot oxygen → ALD → PE front and back coating → silk screen printing → test sorting → packaging and warehousing, wherein the etching comprises the following steps:
the method comprises the following steps: placing the silicon chip in an etching groove, and utilizing HNO3HF etching the back of the silicon wafer, wherein the weight of the silicon wafer is 10.5g, HNO3The corrosion amount of HF to the silicon chip is 0.4 g;
step two: placing the silicon wafer treated in the step one in a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 52L/min to remove residual HNO on the silicon wafer3/HF；
Step three: placing the silicon wafer treated in the step two in an alkali tank, and spraying the silicon wafer by using KOH solution with the solution concentration of 5% and the spraying flow of 22L/min to neutralize HNO remained on the silicon wafer3HF and partially porous silicon;
step four: placing the silicon wafer treated in the third step into a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 58L/min to remove the residual KOH on the silicon wafer;
step five: placing the silicon wafer treated in the fourth step into an acid tank, and removing phosphorosilicate glass remained on the silicon wafer in the diffusion process by utilizing an HF solution with the solution concentration of 12% and the circulation flow of 100L/min;
step six: placing the silicon wafer treated in the fifth step into a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 60L/min to remove residual HF on the silicon wafer;
step seven: drying the silicon wafer processed in the step six by using a dryer, wherein the drying temperature is 62 ℃, and the drying time is 30 s;
step eight: placing the silicon wafer treated in the step seven on a transmission belt, enabling the front surface of the silicon wafer to face downwards to contact with the belt, and increasing the speed of the belt from zero to 4.5m/min after the silicon wafer contacts with the belt;
step nine: enabling the conveying belt in the step eight to longitudinally move for 18s at the speed of 2.5m/min, then turning into transverse movement, enabling the transverse movement speed to be 3.5m/min and the transverse movement time to be 13s, and enabling the conveying belt to turn and rise by 1 mm;
step ten: the longitudinal tongue speed of 5.5m/min is kept running for 8s, and silicon wafers are collected.
Example 6
The embodiment discloses a preparation method of a high-quality photovoltaic crystalline silicon battery piece, which is prepared by a method of texturing → diffusion → laser SE → etching → hot oxygen → ALD → PE front and back coating → silk screen printing → test sorting → packaging and warehousing, wherein the etching comprises the following steps:
the method comprises the following steps: placing the silicon chip in an etching groove, and utilizing HNO3HF etching the back of the silicon wafer, wherein the weight of the silicon wafer is 9.5g, HNO3The corrosion amount of HF to the silicon chip is 0.25 g;
step two: placing the silicon wafer treated in the step one in a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 55L/min to remove residual HNO on the silicon wafer3/HF；
Step three: placing the silicon wafer treated in the step two in an alkali tank, spraying the silicon wafer by using KOH solution with the solution concentration of 4% and the spraying flow of 25L/min to neutralize HNO remained on the silicon wafer3HF and partially porous silicon;
step four: placing the silicon wafer treated in the third step into a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 52L/min to remove the residual KOH on the silicon wafer;
step five: placing the silicon wafer treated in the fourth step into an acid tank, and removing phosphorosilicate glass remained on the silicon wafer in the diffusion process by utilizing an HF solution with the solution concentration of 16% and the circulation flow of 100L/min;
step six: placing the silicon wafer treated in the fifth step into a water tank, and carrying out immersion type washing on the silicon wafer by using deionized water with the circulation flow of 60L/min to remove residual HF on the silicon wafer;
step seven: drying the silicon wafer processed in the step six by using a dryer, wherein the drying temperature is 58 ℃, and the drying time is 26 s;
step eight: placing the silicon wafer treated in the step seven on a transmission belt, enabling the front surface of the silicon wafer to face downwards to contact with the belt, and increasing the speed of the belt from zero to 4.5m/min after the silicon wafer contacts with the belt;
step nine: enabling the conveying belt in the step eight to longitudinally move for 12s at the speed of 3.5m/min, then turning into transverse movement, enabling the transverse movement speed to be 4m/min and the transverse movement time to be 15s, and enabling the conveying belt to turn and rise for 1 mm;
step ten: the longitudinal tongue speed of 4.5m/min is kept for 9s, and silicon wafers are collected.
Comparative example 1
The invention discloses a preparation method of a high-quality photovoltaic crystalline silicon cell, which is prepared by a method of texturing → diffusion → laser SE → etching → hot oxygen → ALD → PE front and back coating → silk screen printing → test sorting → packaging and warehousing, wherein the etching comprises the following steps:
the embodiment discloses a preparation method of a high-quality photovoltaic crystalline silicon battery piece, which is prepared by a method of texturing → diffusion → laser SE → etching → hot oxygen → ALD → PE front and back coating → silk screen printing → test sorting → packaging and warehousing, wherein the etching comprises the following steps:
the method comprises the following steps: placing the silicon chip in an etching groove, and utilizing HNO3HF etching the back of the silicon wafer, wherein HNO3The amount of/HF was 0.3g and the amount of silicon wafer was 10 g;
step two: placing the silicon wafer treated in the step one in a water tank, washing the silicon wafer by using deionized water with the circulation flow of 50L/min, and removing residual HNO on the silicon wafer3/HF；
Step three: placing the silicon wafer treated in the second step into an alkali tank, and dissolving with KOH with the solution concentration of 5% and the spraying flow of 20L/minNeutralizing residual HNO on silicon wafer by liquid3HF and partially porous silicon;
step four: placing the silicon wafer treated in the third step into a water tank, and washing the silicon wafer by using deionized water with the circulation flow of 55L/min to remove the residual KOH on the silicon wafer;
step five: placing the silicon wafer treated in the step four in an acid tank, and removing phosphorosilicate glass remained on the silicon wafer in the diffusion process by using HF with the solution concentration of 12% and the circulation flow of 100L/min;
step six: placing the silicon wafer treated in the fifth step into a water tank, and washing the silicon wafer by using deionized water with the circulation flow of 56L/min to remove residual HF on the silicon wafer;
step seven: drying the silicon wafer processed in the step six by using a dryer, wherein the drying temperature is 60 ℃, and the drying time is 28 s;
step eight: placing the silicon wafer treated in the step seven on a transmission belt, enabling the front surface of the silicon wafer to face downwards to contact with the belt, and transmitting the silicon wafer at the speed of 4.5m/min when the silicon wafer does not contact with the transmission belt;
step nine: enabling the conveying belt in the step eight to longitudinally move for 15s at the speed of 3.5m/min, then turning into transverse movement, enabling the transverse movement speed to be 4.5m/min, enabling the transverse movement time to be 12s, and enabling the conveying belt to turn and rise by 10 mm;
step ten: and keeping the longitudinal tongue at 5m/min for 8s, and collecting the silicon wafer.
Detecting data results
Specific detection data of the photovoltaic crystalline silicon cell pieces prepared in examples 1-6 and comparative example 1 are shown in the following table 1.
TABLE 1
According to the table, the yield of the photovoltaic crystalline silicon cell produced by the preparation method in the prior art is up to 0.5%, degradation treatment is needed when the quality of the photovoltaic crystalline silicon cell is judged, and if the photovoltaic crystalline silicon cell is subjected to etching blocking and lamination, liquid in a groove body is brought to a transmission belt, the number of round spots of the cell is increased in an explosive manner, so that the proportion of the round spots is up to more than 1%; the number of the defects of the round spots of the photovoltaic crystalline silicon cell produced by the preparation method is zero, the defects occur when the cell is subjected to etching blocking and lamination, when the liquid in the cell body is brought to the transmission belt, the cell can generate slight round spots, and the quality of the cell does not need to be degraded when the cell is judged. Therefore, compared with the quality of the photovoltaic crystalline silicon cell produced in the prior art, the quality of the photovoltaic crystalline silicon cell prepared by the preparation method disclosed by the invention has the advantages that the number of defective circular spots is effectively reduced, the productivity is the same, the production efficiency of the photovoltaic crystalline silicon cell is ensured, and the quality of the photovoltaic crystalline silicon cell is effectively improved.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (7)
1. The preparation method of the high-quality photovoltaic crystalline silicon cell slice is prepared by adopting a method of texturing → diffusion → laser SE → etching → hot oxygen → ALD → PE front and back coating → silk screen printing → test sorting → packaging and warehousing, and is characterized in that: the etching comprises the following steps:
the method comprises the following steps: placing the silicon chip in an etching groove, and utilizing HNO3Etching the back surface of the silicon wafer by HF;
step two: placing the silicon wafer treated in the step one in a water tank, washing the silicon wafer by using deionized water, and removing residual HNO on the silicon wafer3/HF；
Step three: putting the silicon slice treated in the step two into an alkali tank, and neutralizing residual HNO on the silicon slice by using KOH3HF and partially porous silicon;
step four: placing the silicon wafer treated in the third step into a water tank, and washing the silicon wafer by using deionized water to remove the residual KOH on the silicon wafer;
step five: placing the silicon wafer treated in the fourth step into an acid tank, and removing phosphorosilicate glass remained on the silicon wafer in the diffusion process by using HF;
step six: placing the silicon wafer treated in the fifth step into a water tank, and washing the silicon wafer by using deionized water to remove residual HF on the silicon wafer;
step seven: drying the silicon wafer processed in the step six;
step eight: placing the silicon wafer treated in the step seven on a transmission belt, enabling the front surface of the silicon wafer to face downwards to contact with the belt, and increasing the speed of the belt from zero to working speed after the silicon wafer contacts with the belt;
step nine: making the conveying belt in the step eight move longitudinally for a certain time, then turning to move transversely, and simultaneously making the conveying belt turn and rise by 0.5-1.5 mm;
step ten: the longitudinal tongue was activated and the silicon wafers were collected.
2. The method for preparing high-quality photovoltaic crystalline silicon cell piece according to claim 1, wherein the HNO in the step one3The amount of HF etched on the silicon wafer is 0.2-0.5g, and the weight of the silicon wafer is 9-11 g.
3. The method for preparing a high-quality photovoltaic crystalline silicon cell as claimed in claim 1, wherein deionized water is used in the second, fourth and sixth steps in an immersion manner, and the circulation flow rate of the deionized water is 50-60L/min; the KOH used in the third step is in a spray type, the mass concentration of the KOH solution is 4-6%, and the spray flow of the KOH solution is 15-25L/min; in the fifth step, the HF is used in a submerged mode, the mass concentration of the HF solution is 10-16%, and the circulating flow rate of the HF solution is 100L/min.
4. The method for preparing a high-quality photovoltaic crystalline silicon cell as claimed in claim 1, wherein a dryer is selected in the seventh step to dry the silicon wafer, the drying time is 25-30s, and the drying temperature is 55-65 ℃.
5. The method for preparing a high-quality photovoltaic crystalline silicon cell as claimed in claim 1, wherein the operating speed of the conveying belt in the step eight is 3-5 m/min.
6. The method for preparing a high-quality photovoltaic crystalline silicon cell as claimed in claim 1, wherein the speed of the longitudinal movement of the transmission belt in the ninth step is 1.5-3.5m/min, and the time of the longitudinal movement is 10-20 s; in the ninth step, the transverse movement speed of the transmission belt is 2.5-4.5m/min, and the transverse movement time is 10-15 s.
7. The method for preparing a high-quality photovoltaic crystalline silicon cell as claimed in claim 1, wherein the speed of the longitudinal tongue in the step ten is 4-6m/min and the time is 5-10 s.
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