CN114292708A - Silicon wafer cleaning agent for cleaning solar cell before texturing and use method - Google Patents
Silicon wafer cleaning agent for cleaning solar cell before texturing and use method Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 80
- 239000010703 silicon Substances 0.000 title claims abstract description 80
- 238000004140 cleaning Methods 0.000 title claims abstract description 60
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000003513 alkali Substances 0.000 claims abstract description 17
- 235000012431 wafers Nutrition 0.000 claims description 73
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- 239000000243 solution Substances 0.000 claims description 18
- -1 acetylene glycol ethoxy compound Chemical class 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000000654 additive Substances 0.000 claims description 9
- 230000000996 additive effect Effects 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 239000004094 surface-active agent Substances 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 8
- 239000002738 chelating agent Substances 0.000 claims description 7
- 229910017053 inorganic salt Inorganic materials 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 239000000080 wetting agent Substances 0.000 claims description 6
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 4
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 4
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 3
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 3
- VTIIJXUACCWYHX-UHFFFAOYSA-L disodium;carboxylatooxy carbonate Chemical compound [Na+].[Na+].[O-]C(=O)OOC([O-])=O VTIIJXUACCWYHX-UHFFFAOYSA-L 0.000 claims description 3
- 239000000174 gluconic acid Substances 0.000 claims description 3
- 235000012208 gluconic acid Nutrition 0.000 claims description 3
- 229930182470 glycoside Natural products 0.000 claims description 3
- 229940045872 sodium percarbonate Drugs 0.000 claims description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 3
- 235000011152 sodium sulphate Nutrition 0.000 claims description 3
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 3
- CRSBERNSMYQZNG-UHFFFAOYSA-N 1 -dodecene Natural products CCCCCCCCCCC=C CRSBERNSMYQZNG-UHFFFAOYSA-N 0.000 claims description 2
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 claims description 2
- CEGPKOIWQYWDNX-UHFFFAOYSA-N 2-[bis(carboxymethyl)amino]acetic acid;sodium Chemical compound [Na].[Na].OC(=O)CN(CC(O)=O)CC(O)=O CEGPKOIWQYWDNX-UHFFFAOYSA-N 0.000 claims description 2
- DUIOKRXOKLLURE-UHFFFAOYSA-N 2-octylphenol Chemical compound CCCCCCCCC1=CC=CC=C1O DUIOKRXOKLLURE-UHFFFAOYSA-N 0.000 claims description 2
- YNJSNEKCXVFDKW-UHFFFAOYSA-N 3-(5-amino-1h-indol-3-yl)-2-azaniumylpropanoate Chemical compound C1=C(N)C=C2C(CC(N)C(O)=O)=CNC2=C1 YNJSNEKCXVFDKW-UHFFFAOYSA-N 0.000 claims description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 2
- 229920001214 Polysorbate 60 Polymers 0.000 claims description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 2
- BCKXLBQYZLBQEK-KVVVOXFISA-M Sodium oleate Chemical compound [Na+].CCCCCCCC\C=C/CCCCCCCC([O-])=O BCKXLBQYZLBQEK-KVVVOXFISA-M 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 238000010923 batch production Methods 0.000 claims description 2
- 235000015165 citric acid Nutrition 0.000 claims description 2
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 2
- 229940069096 dodecene Drugs 0.000 claims description 2
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 2
- 239000000194 fatty acid Substances 0.000 claims description 2
- 229930195729 fatty acid Natural products 0.000 claims description 2
- 229920002313 fluoropolymer Polymers 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 229920000570 polyether Polymers 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 239000001103 potassium chloride Substances 0.000 claims description 2
- 235000011164 potassium chloride Nutrition 0.000 claims description 2
- 239000011780 sodium chloride Substances 0.000 claims description 2
- 235000002639 sodium chloride Nutrition 0.000 claims description 2
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 2
- 235000010344 sodium nitrate Nutrition 0.000 claims description 2
- 239000004317 sodium nitrate Substances 0.000 claims description 2
- 229960001922 sodium perborate Drugs 0.000 claims description 2
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 claims description 2
- 235000019345 sodium thiosulphate Nutrition 0.000 claims description 2
- YKLJGMBLPUQQOI-UHFFFAOYSA-M sodium;oxidooxy(oxo)borane Chemical compound [Na+].[O-]OB=O YKLJGMBLPUQQOI-UHFFFAOYSA-M 0.000 claims description 2
- 230000001502 supplementing effect Effects 0.000 claims description 2
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 claims description 2
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims 1
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000005416 organic matter Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 description 2
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- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- DPZHKLJPVMYFCU-UHFFFAOYSA-N 2-(5-bromopyridin-2-yl)acetonitrile Chemical compound BrC1=CC=C(CC#N)N=C1 DPZHKLJPVMYFCU-UHFFFAOYSA-N 0.000 description 1
- PXRKCOCTEMYUEG-UHFFFAOYSA-N 5-aminoisoindole-1,3-dione Chemical compound NC1=CC=C2C(=O)NC(=O)C2=C1 PXRKCOCTEMYUEG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a silicon wafer cleaning agent for cleaning a solar cell before texturing and a using method thereof. The silicon wafer cleaning agent disclosed by the invention can effectively reduce the consumption of alkali and hydrogen peroxide on a production line, greatly improves the cleaning capacity of the cleaning tank, reduces organic matter residues on the surface of the silicon wafer, improves the yield and efficiency of the manufacturing process, and improves the conversion efficiency of a solar cell by 0.03-0.05%.
Description
Technical Field
The invention relates to the field of silicon wafer cleaning, in particular to a silicon wafer cleaning additive before texturing.
Background
At present, the energy problem increasingly becomes a bottleneck restricting the social and economic development of countries in the world, and solar photovoltaic power generation is receiving high attention as a clean and inexhaustible new energy. Among them, the development and development of high-efficiency solar cells are the fastest and most active research fields in recent years.
The silicon wafer is used as a core material for preparing the solar cell, and the surface state and the pollutant removal degree of the silicon wafer directly influence the yield and the power generation efficiency of the finished solar cell. After the silicon wafer is cut, a layer of high-activity dangling bonds is distributed on the surface of the silicon wafer, an oxide layer is easily formed, various external impurities such as organic pollutants, particles, inorganic impurities, metal ions and the like are easily adsorbed on the surface of the silicon wafer, and KOH or NaOH and H are generally selected2O2The prepared alkali solution removes pollutants by using strong oxidizability at a certain temperature, but the cleaning capability of the pure alkali solution is limited, the stability of hydrogen peroxide is poor, the hydrogen peroxide needs to be continuously supplemented, the consumption of alkali and hydrogen peroxide is very high, and the process stability is poor.
Therefore, the development of the silicon wafer cleaning agent which reduces the consumption of alkali and hydrogen peroxide and improves the cleaning effect is very important.
Disclosure of Invention
In order to solve the technical problems, the invention adopts the technical scheme that: the silicon wafer cleaning agent for cleaning the solar cell before texturing comprises an oxidant, a silicon wafer wetting agent, a surfactant, a chelating agent, inorganic salt and the balance of water.
Preferably, the solar cell silicon wafer cleaning agent comprises the following components in percentage by weight:
preferably, the oxidizing agent of the present invention is one or a combination of two or more of sodium percarbonate, sodium perborate, and perbenzoic acid. The oxidant in the invention can form a hydrophilic oxide film on the surface of the silicon chip, then the oxide film can be corroded by NaOH, oxidation can be generated immediately after corrosion, and oxidation and corrosion are repeated, so that dirt and metal ions attached to the surface of the silicon chip can fall into the cleaning solution along with the corrosion layer. In addition, the oxidant can also react with organic matters adsorbed on the surface of the silicon wafer to decompose and fall into the cleaning liquid.
Preferably, the silicon wafer wetting agent is one or the combination of more than two of acetylene glycol ethoxy compound, dodecene acetylene alcohol polyether modified polysiloxane compound, ethylene oxide addition compound and non-ionic fluorocarbon polymer. The silicon wafer cleaning agent can play a role in wetting and permeating on the surface of a silicon wafer, and accelerates the cleaning effect on organic matters, particles, metals and other impurities.
Preferably, the surfactant is one or a combination of more than two of polyethylene glycol, sodium oleate, sodium dodecyl sulfate, alkyl glycoside, sodium dodecyl benzene sulfonate, isomeric tridecanol polyoxyethylene ether, octyl phenol polyoxyethylene ether and polyoxyethylene sorbitan fatty acid ester. The hydrophobic section of the surfactant is combined and coated with organic matters on the silicon wafer in a solution, the hydrophilic section separates dirt from the surface of the silicon wafer through emulsification and wetting along with water flow, simultaneously, silicic acid with a micelle structure is generated during hydrolysis, the silicic acid has suspension and dispersion capacity on solid dirt particles, and the surface of the silicon wafer can be further cleaned. Meanwhile, the surface active agent can reduce the surface tension of the cleaning agent, can rapidly strip off pollutants on the surface of the silicon wafer, effectively clean the surface of the silicon wafer and reduce the roughness of the surface of the silicon
Preferably, the chelating agent of the present invention is one or a combination of two or more of ethylenediaminetetraacetic acid (EDTA), ethylenediaminetetraacetic acid disodium salt (EDTA-2Na), ethylenediaminetetraacetic acid tetrasodium salt (EDTA-4Na), disodium nitrilotriacetic acid (NTA), Citric Acid (CA), Gluconic Acid (GA), and sodium tripolyphosphate. The chelating ligand of the chelating agent can simultaneously form two or more coordinate bonds with a central ion to generate a coordination compound, and a metal chelate with higher stability than the complex is generated, and particularly has excellent chelating effect on heavy metals. The method can effectively reduce metal impurities on the surface of the silicon wafer, reduce the recombination caused by the metal impurities on the surface, and improve the photoelectric conversion efficiency of the solar cell.
Preferably, the inorganic salt of the present invention is one or a combination of two or more of sodium chloride, potassium chloride, sodium sulfate, sodium thiosulfate and sodium nitrate. The inorganic salt is used as a washing assistant, so that the washing capacity of the surfactant can be enhanced, and the washing effect can be enhanced.
The use method of the silicon wafer cleaning agent for cleaning the solar cell before texturing comprises the following steps:
step 1), preparing a silicon wafer cleaning agent: adding 1-2% of oxidant, 0.05-0.1% of silicon wafer wetting agent, 0.1-0.5% of surfactant, 1-2% of chelating agent and 0.5-2% of inorganic salt into 95% deionized water, and uniformly mixing to obtain a silicon wafer cleaning agent;
step 2), preparing a silicon wafer cleaning solution: adding the silicon wafer cleaning additive prepared in the step 1) into an alkali solution according to the mass ratio of 0.4-0.5%, and uniformly mixing to prepare a silicon wafer cleaning solution. The alkali solution is a mixed aqueous solution of 0.8-1% of hydrogen peroxide and 0.25-0.5% of sodium hydroxide in percentage by mass;
step 3), putting the silicon wafer into the silicon wafer cleaning solution prepared in the step 2) for cleaning, and cleaning for 100-200 seconds at the temperature of 60-70 ℃;
preferably, the cleaning in the step 3) is continuously carried out in batches, 400 silicon wafers are taken as one batch, alkali, hydrogen peroxide and a silicon wafer cleaning agent are added after each batch of silicon wafers are cleaned, and the batch production is completed by circularly supplementing liquid.
The invention has the beneficial effects that:
(1) the silicon wafer cleaning additive can effectively reduce the consumption of alkali and hydrogen peroxide on a production line. Calculated by the 350 batches of service life of the cleaning tank, the theoretical reduction of the alkali consumption is 85 percent, H2O2The theoretical consumption is reduced by 65 percent.
(2) After the silicon wafer cleaning agent disclosed by the invention is used, the cleaning capacity of a cleaning tank is improved to a great extent, organic matter residues on the surface of a silicon wafer are reduced, the yield and efficiency of a manufacturing process are improved, and the conversion efficiency of a solar cell is improved by 0.03-0.05%.
Drawings
FIG. 1 is a comparison graph of raw material consumption data of a production line cleaning process and a monocrystalline silicon cleaning agent;
fig. 2 is a graph comparing the distribution of the photoelectric conversion efficiency of the solar cell sheets obtained by the treatment of examples 1 and 2.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
1. Rinse tank arrangement
320L of deionized water, 3L of sodium hydroxide and 8L of hydrogen peroxide are added into the cleaning tank, and the temperature is raised to 65 ℃. And (3) putting the silicon wafers into a cleaning tank by taking 400pcs as a batch, adding 140mL of alkali liquor, 800mL of hydrogen peroxide and 4.5L of deionized water after cleaning 1 batch, and circularly adding the solution to complete cleaning of each batch of silicon wafers.
2. Texturing of monocrystalline silicon
Adding 320L of deionized water into a texturing groove, heating to 80 ℃, keeping the temperature constant, then adding 4.5L of sodium hydroxide and 2.5L of texturing additive, starting to circularly and uniformly mix, putting the cleaned silicon wafer into the texturing groove to react for 400s, taking out the silicon wafer after the reaction is finished, cleaning and drying.
Example 2
1. Formulating a cleaning additive
Adding 1% of sodium percarbonate, 0.5% of alkyl glycoside, 0.1% of acetylenic diol ethoxy compound, 0.5% of sodium tripolyphosphate and 1% of sodium sulfate into deionized water, and uniformly mixing to obtain the silicon wafer cleaning agent.
2. Rinse tank arrangement
320L of deionized water is added into the cleaning tank, the temperature is raised to 65 ℃, then the constant temperature is kept, and 800mL of sodium hydroxide, 2.8L of hydrogen peroxide and 1.4L of cleaning additive are added. The silicon wafers are put into a cleaning tank by taking 400pcs as a batch, 20mL of alkali liquor, 280mL of hydrogen peroxide, 20mL of cleaning additive and 4.5L of deionized water are added after each cleaning of 1 batch, and the cleaning of each batch of silicon wafers is completed by circularly adding the solution.
3. Texturing of monocrystalline silicon
Adding 320L of deionized water into a texturing groove, heating to 80 ℃, keeping the temperature constant, then adding 4.5L of sodium hydroxide and 2.5L of texturing additive, starting to circularly and uniformly mix, putting the cleaned silicon wafer into the texturing groove to react for 400s, taking out the silicon wafer after the reaction is finished, cleaning and drying.
The silicon wafers cleaned and textured in the embodiments 1 and 2 are manufactured into battery pieces under the same process conditions, and the average conversion efficiency of the manufactured battery pieces is tested. The unit consumption data of the materials is shown in fig. 1, and the photoelectric conversion efficiency distribution of the obtained solar cell is shown in fig. 2.
As can be seen from fig. 1, compared with example 1 (production line cleaning process), example 2 (process for cleaning single crystal silicon according to the present invention) can reduce alkali consumption by 85%, hydrogen peroxide consumption by 65%, and reduce manufacturing cost of solar cell. As can be seen from FIG. 2, compared with example 1, example 2 uses the cleaning agent for cleaning silicon wafers before texturing to improve the proportion of high-efficiency battery pieces. The following table shows that the photoelectric conversion efficiency of the embodiment 2 is improved by 0.047% compared with that of the embodiment 1, and is mainly reflected in open-circuit voltage gain, which indicates that the silicon wafer cleaning agent provided by the invention can improve the photoelectric conversion efficiency of a solar cell.
| Examples | Eta | Uoc | Isc | FF |
| Example 1 | 22.853 | 0.68524 | 10.26920 | 81.83 |
| Example 2 | 22.900 | 0.68619 | 10.27648 | 81.83 |
In conclusion, the cleaning agent for cleaning the silicon wafer before texturing provided by the invention can reduce the consumption of alkali and hydrogen peroxide, effectively reduce the production cost of a solar cell manufacturing end, and simultaneously improve the cleaning effect, thereby improving the photoelectric conversion efficiency of the solar cell.
It should be noted that the technical features related to the present patent application, such as texture making, should be regarded as the prior art, and the specific structure, operation principle, control mode and spatial arrangement mode of the technical features may be selected conventionally in the field, and should not be regarded as the invention point of the present patent, and the present patent is not further specifically described in detail.
Having described preferred embodiments of the present invention in detail, it is to be understood that modifications and variations may be resorted to without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. The silicon wafer cleaning agent for cleaning the solar cell before texturing is characterized by comprising an oxidant, a silicon wafer wetting agent, a surfactant, a chelating agent, an inorganic salt and the balance of water.
2. The silicon wafer cleaning agent for cleaning before solar cell texturing as claimed in claim 1, wherein the silicon wafer cleaning agent for solar cells comprises the following components in percentage by weight:
3. the silicon wafer cleaning agent for cleaning before solar cell texturing according to claim 2, wherein the oxidizing agent is one or a combination of two or more of sodium percarbonate, sodium perborate and perbenzoic acid.
4. The silicon wafer cleaning agent for cleaning before solar cell texturing according to claim 2, wherein the silicon wafer wetting agent is one or a combination of two or more of an acetylene glycol ethoxy compound, a dodecene acetylene alcohol polyether modified polysiloxane compound, an ethylene oxide adduct and a nonionic fluorocarbon polymer.
5. The silicon wafer cleaning agent for cleaning before texturing of a solar cell according to claim 2, wherein the surfactant is one or a combination of two or more of polyethylene glycol, sodium oleate, sodium dodecyl sulfate, alkyl glycoside, sodium dodecyl benzene sulfonate, isomeric tridecanol polyoxyethylene ether, octyl phenol polyoxyethylene ether and polyoxyethylene sorbitan fatty acid ester.
6. The silicon wafer cleaning agent for cleaning before solar cell texturing according to claim 2, wherein the chelating agent is one or a combination of two or more of ethylenediaminetetraacetic acid, disodium ethylenediaminetetraacetate, tetrasodium ethylenediaminetetraacetate, disodium nitrilotriacetic acid, citric acid, gluconic acid and sodium tripolyphosphate.
7. The silicon wafer cleaning agent for cleaning before solar cell texturing according to claim 2, wherein the inorganic salt is one or a combination of two or more of sodium chloride, potassium chloride, sodium sulfate, sodium thiosulfate and sodium nitrate.
8. The use method of the silicon wafer cleaning agent for cleaning before solar cell texturing as claimed in any one of claims 2 to 7, characterized by comprising the following steps:
step 1), preparing a silicon wafer cleaning agent: adding 1-2% of oxidant, 0.05-0.1% of silicon wafer wetting agent, 0.1-0.5% of surfactant, 1-2% of chelating agent and 0.5-2% of inorganic salt into 95% deionized water, and uniformly mixing to obtain a silicon wafer cleaning agent;
step 2), preparing a silicon wafer cleaning solution: adding the silicon wafer cleaning additive prepared in the step 1) into an alkali solution according to the mass ratio of 0.4-0.5%, and uniformly mixing to prepare a silicon wafer cleaning solution. The alkali solution is a mixed aqueous solution of 0.8-1% of hydrogen peroxide and 0.25-0.5% of sodium hydroxide in percentage by mass;
and 3) putting the silicon wafer into the silicon wafer cleaning solution prepared in the step 2) for cleaning, and cleaning for 100-200 seconds at the temperature of 60-70 ℃.
9. The use method of the silicon wafer cleaning agent for cleaning before solar cell texturing as claimed in claim 8, wherein the cleaning in the step 3) is carried out continuously in batches, 400 silicon wafers are taken as one batch, alkali, hydrogen peroxide and the silicon wafer cleaning agent are added after each batch of silicon wafers are cleaned, and the circulating solution supplementing is carried out to complete batch production.
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| CN202111443844.XA CN114292708A (en) | 2021-11-30 | 2021-11-30 | Silicon wafer cleaning agent for cleaning solar cell before texturing and use method |
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| CN202111443844.XA CN114292708A (en) | 2021-11-30 | 2021-11-30 | Silicon wafer cleaning agent for cleaning solar cell before texturing and use method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN114854501A (en) * | 2022-05-12 | 2022-08-05 | 常州时创能源股份有限公司 | Additive for cleaning silicon wafer and application thereof |
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| WO2023216702A1 (en) * | 2022-05-12 | 2023-11-16 | 常州时创能源股份有限公司 | Additive for cleaning silicon wafer, cleaning solution, and cleaning method after texturing of silicon wafer |
| CN115287127A (en) * | 2022-09-13 | 2022-11-04 | 上犹京禾纳米科技有限公司 | Foaming type washing-free photovoltaic environment-friendly cleaning solution and preparation method and application thereof |
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