CN105206709A - Treatment method used for optimizing black silicon surface structure - Google Patents
Treatment method used for optimizing black silicon surface structure Download PDFInfo
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- CN105206709A CN105206709A CN201510651538.3A CN201510651538A CN105206709A CN 105206709 A CN105206709 A CN 105206709A CN 201510651538 A CN201510651538 A CN 201510651538A CN 105206709 A CN105206709 A CN 105206709A
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 190
- 238000000034 method Methods 0.000 title claims abstract description 63
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 84
- 239000000243 solution Substances 0.000 claims abstract description 48
- 239000002994 raw material Substances 0.000 claims abstract description 25
- 239000012670 alkaline solution Substances 0.000 claims abstract description 19
- 238000010306 acid treatment Methods 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 37
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 28
- 238000003672 processing method Methods 0.000 claims description 25
- 239000002253 acid Substances 0.000 claims description 23
- 238000005406 washing Methods 0.000 claims description 22
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 238000005554 pickling Methods 0.000 claims description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 238000002310 reflectometry Methods 0.000 abstract description 21
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000006798 recombination Effects 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 4
- 229910021645 metal ion Inorganic materials 0.000 abstract description 4
- 229910021426 porous silicon Inorganic materials 0.000 abstract description 3
- 238000002474 experimental method Methods 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 description 30
- 229910021641 deionized water Inorganic materials 0.000 description 30
- 238000001020 plasma etching Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000005587 bubbling Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a treatment method used for optimizing a black silicon surface structure. The method includes the steps that a, a black silicon raw material is cleaned in a hydrofluoric acid solution to obtain black silicon to be treated; b, the black silicon to be treated is reacted in an alkaline solution and then washed to obtain treated black silicon; c, the treated black silicon is subjected to acid treatment to obtain an optimized black silicon surface structure. By adopting the treatment method for optimizing the black silicon surface structure, porous silicon and metal ion impurities on the black silicon surface can be effectively removed, damage and dangling bonds on the black silicon surface can be removed as well, the recombination rate of the black silicon surface structure is reduced, the optimized black silicon surface structure is obtained, and while it is guaranteed that the optimized black silicon surface structure has low reflectivity, the corresponding battery efficiency and corresponding module power of the black silicon can be improved. As is shown by experiment results, the corresponding battery efficiency of the black silicon optimized through the treatment method is above 19%, and the corresponding module power is above 270 W.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly, relating to a kind of processing method for optimizing black silicon face structure.
Background technology
Black silicon (blacksilicon) refers to and almost can absorb the extremely low silicon face of all visible rays, reflectivity or silica-base film, is a kind of novel semiconductor material that significantly can improve photoelectric conversion efficiency that current research finds.Compared with general silicon materials, black silicon material almost can stick all visible rays, therefore outward appearance looks it is black; And its surface texture is orderly taper microstructure, directly can not be reflected after photon enters this structure, and enters into after being through multiple reflections inside silicon body, decrease the reflection of light, improve the utilance of light.Because black silicon material has excellent antireflective properties, therefore, it has important application prospect at photovoltaic art.
At present, the preparation method of black silicon mainly contains following several: laser ablation method, reactive ion etching method (RIE) and metal catalyst solution etching method (MCT), wherein, light characteristic is good, reflectivity is low, conforming product rate is high because black silicon face structure that it prepares falls into for reactive ion etching method, becomes one of the most frequently used method of the black silicon of preparation.The operation principle of reactive ion etching method is specially: under low vacuum state, utilizes glow discharge to produce plasma, under the effect of accelerating field, particle high speed bombardment is at silicon chip surface, carry out physical etchings, also there is chemical reaction with surface in particle in addition, produces chemical etching effect.Please refer to Fig. 1, Fig. 1 is the structural representation of reactive ion etching method equipment, this equipment has a high vacuum reative cell, reaction pressure scope is at 1.3Pa ~ 130Pa, and have two pieces of plate electrodes in vacuum chamber, silicon chip is placed on negative electrode, pass into gas and first become active ion, then under the acceleration of electric field, bombard silicon chip surface, active particle and pasc reaction, reach the object preparing black silicon simultaneously.As shown in figures 2-3, Fig. 2 ~ 3 are the stereoscan photograph of the black silicon face structure adopting different preparation method to obtain, and wherein, Fig. 2 is for adopting HF/HNO
3the stereoscan photograph of the black silicon face structure that system solution etching method prepares, Fig. 3 is the stereoscan photograph of the black silicon face structure adopting reactive ion etching method to prepare.More known, the black silicon face structure adopting different preparation method to obtain has larger difference, adopts HF/HNO
3the black silicon face planform that system solution etching method prepares is hole shape, and size is 3 μm ~ 7 μm, and the black silicon face planform adopting reactive ion etching method to prepare is needle-like, and size is 200nm ~ 400nm; Meanwhile, the black silicon adopting reactive ion etching method to prepare is compared and is adopted HF/HNO
3the black silicon reflectivity that system solution etching method prepares drops to 7% by 20%, and the reduction of reflectivity further increases the absorption of black silicon to light, improves the short circuit current of battery.
But the black silicon face structure adopting reactive ion etching method to prepare has larger specific area, and not easily carry out Passivation Treatment, surface texture defines too much complex centre, and compound is serious.Although final obtained cell piece short circuit current rises to some extent, open circuit voltage declines to a great extent, and the efficiency of cell piece does not significantly improve, and due to open circuit voltage reduction, after cell piece makes assembly, encapsulation loss is risen greatly, and component power declines even to some extent without any improvement.Therefore, the optical advantage how taking into account black silicon face structure also reduces the recombination losses brought thus, is current researcher technical problem urgently to be resolved hurrily.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of processing method for optimizing black silicon face structure, adopt processing method provided by the invention to process black silicon face structure, while the black silicon of guarantee has compared with antiradar reflectivity, battery efficiency and component power can be improved.
The invention provides a kind of processing method for optimizing black silicon face structure, comprising the following steps:
A) black silicon raw material is cleaned in a solution of hydrofluoric acid, obtain pending black silicon;
B) pending black silicon is reacted in alkaline solution, then through washing, obtain the black silicon after processing;
C) the black silicon after process is carried out acid treatment, the black silicon face structure after being optimized.
Preferably, step a) described in cleaning temperature be 5 DEG C ~ 20 DEG C, the time is 1min ~ 10min.
Preferably, described step a) also comprises:
Black silicon raw material after cleaning is washed, obtains pending black silicon.
Preferably, step b) described in alkaline solution comprise in potassium hydroxide solution, sodium hydroxide solution and ammonia spirit one or more.
Preferably, step b) described in the mass concentration of alkaline solution be 1% ~ 35%.
Preferably, step b) described in the temperature of reaction be 5 DEG C ~ 25 DEG C, the time is 1min ~ 10min.
Preferably, step b) described in the temperature of washing be 5 DEG C ~ 80 DEG C, the time is 1min ~ 10min.
Preferably, step c) described in acid-treated process be specially:
Black silicon after process is immersed in acid solution and carries out pickling, then through washing, the black silicon face structure after being optimized.
Preferably, described acid solution is the mixed acid solution of hydrofluoric acid, hydrochloric acid and water.
Preferably, the temperature of described pickling is 5 DEG C ~ 20 DEG C, and the time is 1min ~ 10min.
The invention provides a kind of processing method for optimizing black silicon face structure, comprising the following steps: a) black silicon raw material is cleaned in a solution of hydrofluoric acid, obtain pending black silicon; B) pending black silicon is reacted in alkaline solution, then through washing, obtain the black silicon after processing; C) the black silicon after process is carried out acid treatment, the black silicon face structure after being optimized.Processing method provided by the invention is adopted to be optimized black silicon face structure, effectively can not only remove porous silicon and the impurity metal ion of black silicon face, the damage of black silicon face and dangling bonds can also be removed, reduce the recombination rate of black silicon face structure, black silicon face structure after being optimized, while it has compared with antiradar reflectivity in guarantee, black silicon respective battery efficiency and corresponding assembly power can be improved.Experimental result shows, the black silicon respective battery efficiency after adopting processing method provided by the invention to optimize is more than 19%, and corresponding assembly power is at more than 270W.
Accompanying drawing explanation
Fig. 1 is the structural representation of reactive ion etching method equipment;
Fig. 2 is for adopting HF/HNO
3the stereoscan photograph of the black silicon face structure that system solution etching method prepares;
Fig. 3 is the stereoscan photograph of the black silicon face structure adopting reactive ion etching method to prepare;
Fig. 4 is the scanning electron microscope (SEM) photograph of the embodiment of the present invention 1 black silicon raw material surface texture used;
Fig. 5 is the scanning electron microscope (SEM) photograph of the black silicon face structure after the optimization that obtains of the embodiment of the present invention 1.
Embodiment
Below in conjunction with the embodiment of the present invention, be clearly and completely described technical scheme of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The invention provides a kind of processing method for optimizing black silicon face structure, comprising the following steps:
A) black silicon raw material is cleaned in a solution of hydrofluoric acid, obtain pending black silicon;
B) pending black silicon is reacted in alkaline solution, then through washing, obtain the black silicon after processing;
C) the black silicon after process is carried out acid treatment, the black silicon face structure after being optimized.
In the present invention, black silicon raw material is cleaned in a solution of hydrofluoric acid, obtain pending black silicon.In the present invention, the object of described cleaning is the pollutant such as organic substance, greasy dirt except de-black silicon raw material surface, for subsequent treatment provides clean surface.In the present invention, the process that black silicon raw material carries out cleaning in a solution of hydrofluoric acid is preferably specially:
Described black silicon raw material is immersed in described hydrofluoric acid solution and cleans, obtain pending black silicon.The source of the present invention to described black silicon raw material is not particularly limited, and adopts commercial goods well known to those skilled in the art.In the present invention, described hydrofluoric acid solution obtains after preferably being mixed by hydrofluoric acid and water, and the volume ratio of described hydrofluoric acid and water is preferably 1:(4 ~ 10), be more preferably 1:5.In the present invention, the mass fraction of described hydrofluoric acid is preferably 30% ~ 55%, is more preferably 49%; The source of the present invention to described hydrofluoric acid is not particularly limited, and adopts commercial goods well known to those skilled in the art.The consumption of the present invention to described hydrofluoric acid solution is not particularly limited, and carries out in a solution of hydrofluoric acid cleaning can make described black silicon raw material thorough impregnation.
In the present invention, the temperature of described cleaning is preferably 5 DEG C ~ 20 DEG C, is more preferably 15 DEG C; The time of described cleaning is preferably 1min ~ 10min, is more preferably 5min ~ 8min.
After completing described cleaning, the present invention preferably also comprises:
Black silicon raw material after cleaning is washed, obtains pending black silicon.The mode of the present invention to described washing is not particularly limited, and preferably adopts bubbling process well known to those skilled in the art.In the present invention, the temperature of described washing is preferably 5 DEG C ~ 80 DEG C, is more preferably 40 DEG C; The time of described washing is preferably 1min ~ 10min, is more preferably 5min ~ 8min.
After completing described washing, pending black silicon reacts by the present invention in alkaline solution, then through washing, obtains the black silicon after processing.In the present invention, described pending black silicon to be reacted in alkaline solution, then except the damage of de-black silicon face and dangling bonds, the recombination rate of black silicon face can be reduced through the process of washing.
In the present invention, pending black silicon is reacted in alkaline solution, obtain reacted black silicon.In the present invention, the mode of dipping is preferably adopted to be reacted in alkaline solution by pending black silicon.In the present invention, described alkaline solution preferably include in potassium hydroxide solution, sodium hydroxide solution and ammonia spirit one or more, be more preferably potassium hydroxide solution, sodium hydroxide solution or ammonia spirit, most preferably be potassium hydroxide solution.The source of the present invention to described alkaline solution is not particularly limited, and adopts the commercial goods of above-mentioned potassium hydroxide solution well known to those skilled in the art, sodium hydroxide solution and ammonia spirit.
In the present invention, the mass concentration of described alkaline solution is preferably 1% ~ 35%, is more preferably 5% ~ 33.3%, most preferably is 10%.The consumption of the present invention to described alkaline solution is not particularly limited, and is completely infused in described alkaline solution carries out reacting can make pending black silicon.
In the present invention, the temperature of described reaction is preferably 5 DEG C ~ 25 DEG C, is more preferably 20 DEG C; The time of described reaction is preferably 1min ~ 10min, is more preferably 5min ~ 8min.
After completing described reaction, reacted black silicon is washed by the present invention, obtains the black silicon after processing.The mode of the present invention to described washing is not particularly limited, and preferably adopts bubbling process well known to those skilled in the art.In the present invention, the temperature of described washing is preferably 5 DEG C ~ 80 DEG C, is more preferably 40 DEG C; The time of described washing is preferably 1min ~ 10min, is more preferably 5min ~ 8min.
After obtaining the black silicon after described process, the black silicon after process is carried out acid treatment, the black silicon face structure after being optimized by the present invention.In the present invention, described acid-treated object is the harmful substance such as impurity metal ion, organic substance except de-black silicon face.In the present invention, described acid-treated process is preferably specially:
Black silicon after process is immersed in acid solution and carries out pickling, then through washing, the black silicon face structure after being optimized.In the present invention, the black silicon after process is immersed in acid solution and carries out pickling.In the present invention, described acid solution is preferably the mixed acid solution of hydrofluoric acid, hydrochloric acid and water.In the present invention, described mixed acid solution is preferably mixed to get by hydrofluoric acid, hydrochloric acid and water, and the volume ratio of described hydrofluoric acid, hydrochloric acid and water is preferably 1:(1 ~ 3): (12 ~ 20), are more preferably 1:1:18.In the present invention, the mass fraction of described hydrofluoric acid is preferably 30% ~ 55%, is more preferably 49%; The mass fraction of described hydrochloric acid is preferably 30% ~ 40%, is more preferably 37%.The source of the present invention to described hydrofluoric acid and hydrochloric acid is not particularly limited, and adopts the commercial goods of above-mentioned hydrofluoric acid well known to those skilled in the art and hydrochloric acid.The consumption of the present invention to described acid solution is not particularly limited, and carries out pickling so that the black silicon after process can be made to be completely infused in acid solution.
In the present invention, the temperature of described pickling is preferably 5 DEG C ~ 20 DEG C, is more preferably 15 DEG C; The time of described pickling is preferably 1min ~ 10min, is more preferably 5min ~ 8min.
After completing described pickling, the black silicon after pickling is washed by the present invention, the black silicon face structure after being optimized.The mode of the present invention to described washing is not particularly limited, and preferably adopts bubbling process well known to those skilled in the art.In the present invention, the temperature of described washing is preferably 5 DEG C ~ 80 DEG C, is more preferably 40 DEG C; The time of described washing is preferably 1min ~ 10min, is more preferably 5min ~ 8min.
The invention provides a kind of processing method for optimizing black silicon face structure, comprising the following steps: a) black silicon raw material is cleaned in a solution of hydrofluoric acid, obtain pending black silicon; B) pending black silicon is reacted in alkaline solution, then through washing, obtain the black silicon after processing; C) the black silicon after process is carried out acid treatment, the black silicon face structure after being optimized.Processing method provided by the invention is adopted to be optimized black silicon face structure, effectively can not only remove porous silicon and the impurity metal ion of black silicon face, the damage of black silicon face and dangling bonds can also be removed, reduce the recombination rate of black silicon face structure, black silicon face structure after being optimized, while it has compared with antiradar reflectivity in guarantee, black silicon respective battery efficiency and corresponding assembly power can be improved.Experimental result shows, the black silicon respective battery efficiency after adopting processing method provided by the invention to optimize is more than 19%, and corresponding assembly power is at more than 270W.
In addition, processing method provided by the invention is simple to operate, cost is low, to promote black silicon further develop and apply of great advantage.
In order to further illustrate the present invention, be described in detail below by following examples.Following examples of the present invention black silicon raw material used is provided by Jiangxi Jinko Solar Co., Ltd..
Embodiment 1
(1) black silicon raw material to be immersed in volume ratio be the mass fraction of 1:5 be 49% hydrofluoric acid and deionized water hydrofluoric acid solution in, at 15 DEG C, clean 5min, then at 40 DEG C, wash 5min with deionized water, obtain pending black silicon.
(2) pending black silicon being immersed in mass concentration is in the potassium hydroxide solution of 10%, reacts 5min, then at 40 DEG C, wash 5min with deionized water at 20 DEG C, obtains the black silicon after processing.
(3) the black silicon after process is immersed in volume ratio is the mass fraction of 1:1:18 be 49% hydrofluoric acid, mass fraction be 37% hydrochloric acid and deionized water mixed acid solution in, pickling 5min at 15 DEG C, at 40 DEG C, 5min is washed again, the black silicon face structure after being optimized with deionized water.
Hitachi (Hitachi) S-4800 type ESEM is adopted to carry out scanning electron microscope analysis to the black silicon face structure after embodiment 1 black silicon raw material surface texture used and the optimization that obtains, obtain stereoscan photograph respectively as shown in Figures 4 and 5, wherein, Fig. 4 is the scanning electron microscope (SEM) photograph of the embodiment of the present invention 1 black silicon raw material surface texture used, and Fig. 5 is the scanning electron microscope (SEM) photograph of the black silicon face structure after the optimization that obtains of the embodiment of the present invention 1.Comparison diagram 4 ~ 5 is known, and the processing method adopting the embodiment of the present invention 1 to provide is obvious to the treatment effect of black silicon face structure, effectively can reduce black silicon face compound.
Black silicon reflectivity, respective battery efficiency and corresponding assembly power before and after the disposal methods adopting D8 type reflectance test instrument, Halm1-V type tester and NPC1-V type tester to provide embodiment 1 respectively detect, and the results are shown in Table 1.
Black silicon efficacy parameter before and after the disposal methods that table 1 embodiment 1 provides
| Project | Reflectivity (%) | Respective battery efficiency (%) | Corresponding assembly power (W) |
| Before process | 6 | 18.25 | 260 |
| After process | 10 | 19.05 | 272 |
As shown in Table 1, the processing method adopting the embodiment of the present invention 5 to provide processes black silicon face structure, while the black silicon of guarantee has compared with antiradar reflectivity, can improve battery efficiency and component power.
Embodiment 2
(1) black silicon raw material used for embodiment 1 to be immersed in volume ratio be the mass fraction of 1:10 be 49% hydrofluoric acid and deionized water hydrofluoric acid solution in, 10min is cleaned at 15 DEG C, at 40 DEG C, wash 10min with deionized water again, obtain pending black silicon.
(2) pending black silicon being immersed in mass concentration is in the sodium hydroxide solution of 20%, reacts 10min, then at 40 DEG C, wash 10min with deionized water at 20 DEG C, obtains the black silicon after processing.
(3) the black silicon after process is immersed in volume ratio is the mass fraction of 1:1:12 be 49% hydrofluoric acid, mass fraction be 37% hydrochloric acid and deionized water mixed acid solution in, pickling 10min at 15 DEG C, at 40 DEG C, 10min is washed again, the black silicon face structure after being optimized with deionized water.
The reflectivity of the black silicon after the disposal methods provide embodiment 2, respective battery efficiency and corresponding assembly power detect, and result shows, the reflectivity of the black silicon after process is 9%, and respective battery efficiency is 19.0%, and corresponding assembly power is 270W.
Embodiment 3
(1) black silicon raw material used for embodiment 1 to be immersed in volume ratio be the mass fraction of 1:8 be 49% hydrofluoric acid and deionized water hydrofluoric acid solution in, 8min is cleaned at 15 DEG C, at 40 DEG C, wash 8min with deionized water again, obtain pending black silicon.
(2) pending black silicon being immersed in mass concentration is in the ammonia spirit of 33.3%, reacts 8min, then at 40 DEG C, wash 8min with deionized water at 20 DEG C, obtains the black silicon after processing.
(3) the black silicon after process is immersed in volume ratio is the mass fraction of 1:1:20 be 49% hydrofluoric acid, mass fraction be 37% hydrochloric acid and deionized water mixed acid solution in, pickling 8min at 15 DEG C, at 40 DEG C, 8min is washed again, the black silicon face structure after being optimized with deionized water.
The reflectivity of the black silicon after the disposal methods provide embodiment 3, respective battery efficiency and corresponding assembly power detect, and result shows, the reflectivity of the black silicon after process is 9.5%, and respective battery efficiency is 19.02%, and corresponding assembly power is 271W.
Embodiment 4
(1) black silicon raw material used for embodiment 1 to be immersed in volume ratio be the mass fraction of 1:5 be 40% hydrofluoric acid and deionized water hydrofluoric acid solution in, 5min is cleaned at 20 DEG C, at 20 DEG C, wash 5min with deionized water again, obtain pending black silicon.
(2) pending black silicon being immersed in mass concentration is in the potassium hydroxide solution of 10%, reacts 5min, then at 20 DEG C, wash 5min with deionized water at 20 DEG C, obtains the black silicon after processing.
(3) the black silicon after process is immersed in volume ratio is the mass fraction of 1:1:18 be 40% hydrofluoric acid, mass fraction be 30% hydrochloric acid and deionized water mixed acid solution in, pickling 5min at 20 DEG C, at 20 DEG C, 5min is washed again, the black silicon face structure after being optimized with deionized water.
The reflectivity of the black silicon after the disposal methods provide embodiment 4, respective battery efficiency and corresponding assembly power detect, and result shows, the reflectivity of the black silicon after process is 9.5%, and respective battery efficiency is 19.03%, and corresponding assembly power is 271W.
Embodiment 5
(1) black silicon raw material used for embodiment 1 to be immersed in volume ratio be the mass fraction of 1:5 be 55% hydrofluoric acid and deionized water hydrofluoric acid solution in, 5min is cleaned at 5 DEG C, at 5 DEG C, wash 5min with deionized water again, obtain pending black silicon.
(2) pending black silicon being immersed in mass concentration is in the potassium hydroxide solution of 10%, reacts 5min, then at 5 DEG C, wash 5min with deionized water at 5 DEG C, obtains the black silicon after processing.
(3) the black silicon after process is immersed in volume ratio is the mass fraction of 1:1:18 be 55% hydrofluoric acid, mass fraction be 40% hydrochloric acid and deionized water mixed acid solution in, pickling 5min at 5 DEG C, at 5 DEG C, 5min is washed again, the black silicon face structure after being optimized with deionized water.
The reflectivity of the black silicon after the disposal methods provide embodiment 5, respective battery efficiency and corresponding assembly power detect, and result shows, the reflectivity of the black silicon after process is 9%, and respective battery efficiency is 19.0%, and corresponding assembly power is 270W.
Embodiment 6
(1) black silicon raw material used for embodiment 1 to be immersed in volume ratio be the mass fraction of 1:5 be 30% hydrofluoric acid and deionized water hydrofluoric acid solution in, 5min is cleaned at 20 DEG C, at 80 DEG C, wash 5min with deionized water again, obtain pending black silicon.
(2) pending black silicon being immersed in mass concentration is in the potassium hydroxide solution of 10%, reacts 5min, then at 80 DEG C, wash 5min with deionized water at 25 DEG C, obtains the black silicon after processing.
(3) the black silicon after process is immersed in volume ratio is the mass fraction of 1:1:18 be 30% hydrofluoric acid, mass fraction be 37% hydrochloric acid and deionized water mixed acid solution in, pickling 5min at 20 DEG C, at 80 DEG C, 5min is washed again, the black silicon face structure after being optimized with deionized water.
The reflectivity of the black silicon after the disposal methods provide embodiment 6, respective battery efficiency and corresponding assembly power detect, and result shows, the reflectivity of the black silicon after process is 9.2%, and respective battery efficiency is 19.02%, and corresponding assembly power is 272W.
The above-mentioned explanation of the disclosed embodiments, enables professional and technical personnel in the field realize or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1., for optimizing a processing method for black silicon face structure, it is characterized in that, comprise the following steps:
A) black silicon raw material is cleaned in a solution of hydrofluoric acid, obtain pending black silicon;
B) pending black silicon is reacted in alkaline solution, then through washing, obtain the black silicon after processing;
C) the black silicon after process is carried out acid treatment, the black silicon face structure after being optimized.
2. processing method according to claim 1, is characterized in that, step a) described in cleaning temperature be 5 DEG C ~ 20 DEG C, the time is 1min ~ 10min.
3. processing method according to claim 1, is characterized in that, described step a) also comprises:
Black silicon raw material after cleaning is washed, obtains pending black silicon.
4. processing method according to claim 1, is characterized in that, step b) described in alkaline solution comprise in potassium hydroxide solution, sodium hydroxide solution and ammonia spirit one or more.
5. processing method according to claim 1, is characterized in that, step b) described in the mass concentration of alkaline solution be 1% ~ 35%.
6. processing method according to claim 1, is characterized in that, step b) described in reaction temperature be 5 DEG C ~ 25 DEG C, the time is 1min ~ 10min.
7. processing method according to claim 1, is characterized in that, step b) described in washing temperature be 5 DEG C ~ 80 DEG C, the time is 1min ~ 10min.
8. processing method according to claim 1, is characterized in that, step c) described in acid-treated process be specially:
Black silicon after process is immersed in acid solution and carries out pickling, then through washing, the black silicon face structure after being optimized.
9. processing method according to claim 8, is characterized in that, described acid solution is the mixed acid solution of hydrofluoric acid, hydrochloric acid and water.
10. processing method according to claim 8, is characterized in that, the temperature of described pickling is 5 DEG C ~ 20 DEG C, and the time is 1min ~ 10min.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106548935A (en) * | 2016-11-16 | 2017-03-29 | 中国电子科技集团公司第四十四研究所 | The method for making black silicon layer |
| CN107275423A (en) * | 2017-06-06 | 2017-10-20 | 英利能源（中国）有限公司 | A kind of processing method for lifting black silion cell conversion efficiency |
| CN108493270A (en) * | 2018-03-14 | 2018-09-04 | 江西比太科技有限公司 | A kind of alkali cleaning dry method process for etching |
| CN108682615A (en) * | 2018-05-04 | 2018-10-19 | 常州比太黑硅科技有限公司 | Cleaning after a kind of black silicon of dry method making herbs into wool |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151423A (en) * | 2013-02-28 | 2013-06-12 | 常州捷佳创精密机械有限公司 | Texturing and cleaning process method of polysilicon wafer |
| US20130234072A1 (en) * | 2009-11-11 | 2013-09-12 | Alliance For Sustanable Energy, Llc | Wet-chemical systems and methods for producing black silicon substrates |
| WO2014166256A1 (en) * | 2013-04-12 | 2014-10-16 | 苏州阿特斯阳光电力科技有限公司 | Crystalline silicon solar cell textured structure and manufacturing method for same |
-
2015
- 2015-10-10 CN CN201510651538.3A patent/CN105206709A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130234072A1 (en) * | 2009-11-11 | 2013-09-12 | Alliance For Sustanable Energy, Llc | Wet-chemical systems and methods for producing black silicon substrates |
| CN103151423A (en) * | 2013-02-28 | 2013-06-12 | 常州捷佳创精密机械有限公司 | Texturing and cleaning process method of polysilicon wafer |
| WO2014166256A1 (en) * | 2013-04-12 | 2014-10-16 | 苏州阿特斯阳光电力科技有限公司 | Crystalline silicon solar cell textured structure and manufacturing method for same |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106548935A (en) * | 2016-11-16 | 2017-03-29 | 中国电子科技集团公司第四十四研究所 | The method for making black silicon layer |
| CN107275423A (en) * | 2017-06-06 | 2017-10-20 | 英利能源（中国）有限公司 | A kind of processing method for lifting black silion cell conversion efficiency |
| CN107275423B (en) * | 2017-06-06 | 2018-10-12 | 英利能源（中国）有限公司 | A kind of processing method promoting black silion cell transfer efficiency |
| CN108493270A (en) * | 2018-03-14 | 2018-09-04 | 江西比太科技有限公司 | A kind of alkali cleaning dry method process for etching |
| CN108682615A (en) * | 2018-05-04 | 2018-10-19 | 常州比太黑硅科技有限公司 | Cleaning after a kind of black silicon of dry method making herbs into wool |
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