CN110165016A - It is a kind of for improving the production method of PERC battery - Google Patents
It is a kind of for improving the production method of PERC battery Download PDFInfo
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- CN110165016A CN110165016A CN201910297831.2A CN201910297831A CN110165016A CN 110165016 A CN110165016 A CN 110165016A CN 201910297831 A CN201910297831 A CN 201910297831A CN 110165016 A CN110165016 A CN 110165016A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 31
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 31
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 127
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 127
- 239000010703 silicon Substances 0.000 claims abstract description 127
- 238000005530 etching Methods 0.000 claims abstract description 43
- 239000011521 glass Substances 0.000 claims abstract description 18
- 238000001035 drying Methods 0.000 claims abstract description 15
- 239000011259 mixed solution Substances 0.000 claims abstract description 15
- 239000002253 acid Substances 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 235000008216 herbs Nutrition 0.000 claims abstract description 7
- 238000012545 processing Methods 0.000 claims abstract description 7
- 210000002268 wool Anatomy 0.000 claims abstract description 7
- 238000005422 blasting Methods 0.000 claims abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910021426 porous silicon Inorganic materials 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 7
- 229960002050 hydrofluoric acid Drugs 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 4
- 231100000719 pollutant Toxicity 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 240000005373 Panax quinquefolius Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of for improving the production method of PERC battery, making herbs into wool and DIFFUSION TREATMENT are sequentially carried out to silicon wafer including (1), so that the phosphorosilicate glass layer that the front of silicon wafer is formed with phosphorus-diffused layer and is covered in the phosphorus-diffused layer, there are PN junctions at the edge of the silicon wafer；(2) front side of silicon wafer is sent into etching machine bench upward, the PN junction of the silicon chip edge is removed by the mixed solution in etching machine bench, and be processed by shot blasting to the back side of silicon wafer, the silicon wafer is then sent out into etching machine bench；(3) it is sent into feed belt after carrying out overturning processing to the silicon wafer, so that the front of silicon wafer is contacted with feed belt；(4) silicon wafer feeding is held in part using feed belt, as the part that holds removes the phosphorosilicate glass layer of front side of silicon wafer sequentially through acid tank, third sink and drying tank, and it is cleaned and is dried.The present invention can substantially improve PERC solar battery bad problem of EL because of caused by pollution.
Description
Technical field
The invention belongs to solar-energy photo-voltaic cell manufacturing technology fields, and in particular to a kind of for improving the system of PERC battery
Make method, more specifically designs a kind of for improving the undesirable production method of PERC battery EL.
Background technique
PERC battery and the maximum difference of conventional batteries are that back surface deielectric-coating is passivated, and using partial metallic contact, have
Effect reduces the electronics recombination velocity at the back side, while improving the light reflection of back surface.Current PERC battery production technology process
As shown in Figure 1, from front to back successively are as follows: 1. making herbs into wool: carrying out making herbs into wool to silicon wafer and form flannelette；2. diffusion: being carried out to front side of silicon wafer
Phosphorus diffusion forms PN junction；3. etching: being polished to the back side, remove edge PN junction and positive phosphorosilicate glass.4. oxidation: in silicon
Piece front forms the silica membrane of one layer of 2-10nm.5 back passivation: overleaf forming one layer of pellumina and silicon nitride film,
Passivation effect is reached to the back side.6.PECVD: silicon nitride anti-reflecting film is plated on silicon wafer two sides.7. laser slotting: according to setting figure
Backside oxide aluminium and silicon nitride film layer are got through with laser, makes to carry on the back electric field and back side silicon substrate forms electric path.8. printing-sintering:
Printed back electrode (silver paste), back side grid line (aluminium paste, printing alum gate line need to be overlapped with laser slotting) and front gate line and electrode
(silver paste)；Then the cell piece printed is sintered under high temperature (300~900 DEG C), makes the slurry and silicon wafer shape of printing
At good Ohmic contact.
Solar battery in process of production electroluminescent (Electro Luminesence, EL) it is bad mainly due to
Silicon wafer touches caused by pollutant.Based on existing fabrication processing, in diffusion process, front side of silicon wafer can sedimentary phosphor silicon
Glass (mixture of silica, phosphorus and phosphorus pentoxide).After completing etching procedure, out after etching machine bench silicon wafer via from
Dynamicization equipment belt transport enters the gaily decorated basket.Since the belt of automation equipment is elongated with the time service time, it may appear that mill
Damage, will appear pollutant and is stained on belt.Silicon wafer connects via belt transport, either front side of silicon wafer or the back side in production process
Belt transport is touched, all the pollutant on belt can be transferred to silicon chip surface.Silicon wafer is via being fabricated to electricity after subsequent process flow
After the piece of pond, pollutant will enter inside silicon wafer, thus cause EL test bad, and cell piece transfer efficiency is caused to reduce,
A series of problems, such as reliability is deteriorated.
Summary of the invention
In view of the above-mentioned problems, the present invention proposes a kind of for improving the production method of PERC battery, can substantially improve
PERC solar battery bad problem of EL because of caused by pollution.
In order to achieve the above technical purposes, reach above-mentioned technical effect, the invention is realized by the following technical scheme:
It is a kind of for improving the production method of PERC battery, comprising the following steps:
(1) making herbs into wool and DIFFUSION TREATMENT are sequentially carried out to silicon wafer, so that the front of silicon wafer is formed with phosphorus-diffused layer and covering
Phosphorosilicate glass layer in the phosphorus-diffused layer, there are PN junctions at the edge of the silicon wafer；
(2) front side of silicon wafer is sent into etching machine bench upward, the silicon is removed by the mixed solution in etching machine bench
The PN junction at piece edge, and the back side of silicon wafer is processed by shot blasting, the silicon wafer is then sent out into etching machine bench；
(3) it is sent into feed belt after carrying out overturning processing to the silicon wafer, so that the front of silicon wafer is contacted with feed belt；
(4) silicon wafer feeding is held in part using feed belt, as the part that holds is sequentially through acid tank, third sink
And drying tank, the phosphorosilicate glass layer of front side of silicon wafer is removed, and it is cleaned and is dried.
Preferably, the front side of silicon wafer is sent into etching machine bench upward in the step (2), by mixed in etching machine bench
It closes solution and removes the PN junction of the silicon chip edge, and the back side of silicon wafer is processed by shot blasting, specifically include following sub-step:
The front side of silicon wafer is sent into etching groove upward, remove silicon chip edge PN junction and silicon chip back side is polished；
The silicon wafer is sent into the first sink after being cleaned, is sent into the porous silicon that alkali trough washery removes silicon chip surface；
The silicon wafer is sent into the second sink after being cleaned, is sent into hot wind slot and utilizes hot wind by the water of silicon chip surface
Divide drying.
Preferably, what is held in the etching groove is the mixed solution of hydrofluoric acid, nitric acid and water；It is held in the alkali slot
It is the mixed solution of sodium hydroxide and water；What is held in first sink and the second sink is pure water.
Preferably, the silicon wafer is transported by roller conveyor sequentially through etching groove, the first sink, alkali in etching machine bench
Slot, the second sink and hot wind slot.
Preferably, in the step (3) overturning processing is carried out to the silicon wafer after be sent into feed belt so that silicon wafer
Front is contacted with feed belt, specifically:
After silicon wafer comes out from etching machine bench, on the flip piece in etching machine bench exit；
After silicon wafer is completely on flip piece, the flip piece rotates 180 degree, and silicon wafer is put on feed belt,
So that the front of silicon wafer is contacted with feed belt.
Preferably, the part that holds is the gaily decorated basket.
Preferably, what is held in the acid tank is the mixed solution of hydrofluoric acid and water, wherein hydrofluoric acid concentration 5%-
15%, soaking time 1-5min.
Preferably, the time that the silicon wafer impregnates in third sink is 2-5min.
Preferably, hot wind is passed through in the drying tank, internal temperature is 50-80 DEG C, drying time 3-6min.
Preferably, it is described using feed belt by silicon wafer feeding holds in part, with it is described hold part sequentially through acid tank,
After sink and drying tank step, further includes:
Sequentially silicon wafer is aoxidized, carries on the back passivation, PECVD plated film, laser slotting and printing-sintering, forms PERC battery.
Compared with prior art, beneficial effects of the present invention:
The present invention provides a kind of production methods for improving PERC battery, excellent by carrying out process flow in etching procedure
Change, under conditions of so that silicon wafer is had phosphorosilicate glass layer protective layer, feed belt is contacted by the phosphorosilicate glass layer protective layer, then
The gaily decorated basket is sent by feed belt, avoids contact of the silicon wafer directly with transmission belt, thus avoid bringing pollution with belt contacts,
Aforementioned silicon wafer is sent into acid tank again, realization washes the phosphorosilicate glass layer, finally cleaned with clear water, so that silicon wafer avoids
The risk polluted in blanking process again by transmission belt is completed after etching, so as to improve PERC solar battery due to pollution
The caused bad problem of EL.
Detailed description of the invention
Fig. 1 is the flow diagram for being in the prior art PERC cell production method of the present invention；
Fig. 2 is the production method flow diagram of PERC battery of the present invention；
Fig. 3 is the structural schematic diagram of silicon wafer after diffusion.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
It limits the scope of protection of the present invention.
Application principle of the invention is explained in detail with reference to the accompanying drawing.
The present invention provides a kind of for improving the production method of PERC battery, is illustrated in figure 2 proposed by the present invention
The flow diagram of PERC cell production method, be followed successively by from front to back making herbs into wool, diffusion, etching, cleaning, oxidation, back passivation,
PECVD plated film, printing-sintering.Wherein, improvement of the invention is mainly reflected in etching and cleaning process.
It is a kind of for improving the production method of PERC battery, comprising the following steps:
(1) making herbs into wool and DIFFUSION TREATMENT are sequentially carried out to silicon wafer, so that the front of silicon wafer is formed with phosphorus-diffused layer and covering
Phosphorosilicate glass layer in the phosphorus-diffused layer, there are PN junctions at the edge of the silicon wafer, and the phosphorosilicate glass layer is mainly by dioxy
SiClx and phosphorus composition, are to be formed in diffusion process, with a thickness of 20nm-50nm, referring specifically to Fig. 3；
(2) front side of silicon wafer is sent into etching machine bench upward, the silicon is removed by the mixed solution in etching machine bench
The PN junction at piece edge, and the back side of silicon wafer is processed by shot blasting, the silicon wafer is then sent out into etching machine bench；
In a kind of specific embodiment of the embodiment of the present invention, the step (2) specifically includes following sub-step:
The front side of silicon wafer is sent into etching groove upward, remove silicon chip edge PN junction and silicon chip back side is polished；Institute
State held in etching groove be hydrofluoric acid, nitric acid and water mixed solution；
The silicon wafer is sent into the first sink after being cleaned, is sent into the porous silicon that alkali trough washery removes silicon chip surface；It is described
What is held in alkali slot is the mixed solution of sodium hydroxide and water；
The silicon wafer is sent into the second sink after being cleaned, is sent into hot wind slot and utilizes hot wind by the water of silicon chip surface
Divide drying, the silicon wafer is then sent out into etching machine bench；What is held in first sink and the second sink is pure water, effect
It is the chemical liquid that cleaning silicon chip surface carries；
Preferably, in above process, the silicon wafer is transported by roller conveyor sequentially through etching in etching machine bench
Slot, the first sink, alkali slot, the second sink and hot wind slot.
(3) it is sent into feed belt after carrying out overturning processing to the silicon wafer, so that the front of silicon wafer is contacted with feed belt；
Since the diffusingsurface of silicon wafer of the invention is cleaned without the mixed solution in etching groove, therefore the phosphorosilicate glass layer on diffusingsurface surface
It is saved.During silicon wafer diffusion face contact feed belt is transmitted, due to the phosphorosilicate glass layer on diffusingsurface surface
Has blocking protective effect, the dirty impurity carried on feed belt can only remain in the phosphorosilicate glass layer surface, and can not
Touch diffusion layer；
In a specific embodiment of the invention, the step (3) specifically includes following sub-step:
After silicon wafer comes out from etching machine bench, on the flip piece in etching machine bench exit；The overturning
Part can be obtained directly from upper buying above, and specific structure is not inventive point place of the invention, therefore does not do excessive go to live in the household of one's in-laws on getting married
It states and limits；
After silicon wafer is completely on flip piece, the flip piece rotates 180 degree, and silicon wafer is put on feed belt,
So that the front of silicon wafer is contacted with feed belt.
(4) silicon wafer feeding is held in part using feed belt, it is preferable that the part that holds is the gaily decorated basket, with the Sheng
Part is put sequentially through acid tank, third sink and drying tank, in the actual process, entire silicon wafer is immersed in the acid tank, third
In sink and drying tank, the phosphorosilicate glass layer of front side of silicon wafer is removed, and it is cleaned and is dried；
In a preferred embodiment of the invention, what is held in the acid tank is the mixed solution of hydrofluoric acid and water, wherein hydrogen
Fluoric acid concentration is 5%-15%, and time of the silicon wafer in acid tank is 1-5min, and effect is the phosphorosilicate glass layer for removing silicon chip surface；
The time that the silicon wafer impregnates in third sink is 2-5min, and effect is the chemical liquid that cleaning silicon chip surface carries；It is described
Hot wind is passed through in drying tank, internal temperature is 50-80 DEG C, and drying time 3-6min, effect is dried to silicon wafer.
Further, described to be held silicon wafer feeding in part using feed belt, as the part that holds is sequentially through acid
After slot, sink and drying tank step, further includes:
Sequentially silicon wafer is aoxidized, carries on the back passivation, PECVD plated film, laser slotting and printing-sintering, forms PERC battery.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (10)
1. a kind of for improving the production method of PERC battery, which comprises the following steps:
(1) making herbs into wool and DIFFUSION TREATMENT are sequentially carried out to silicon wafer, so that the front of silicon wafer is formed with phosphorus-diffused layer and is covered on institute
The phosphorosilicate glass layer in phosphorus-diffused layer is stated, there are PN junctions at the edge of the silicon wafer；
(2) front side of silicon wafer is sent into etching machine bench upward, the silicon wafer side is removed by the mixed solution in etching machine bench
The PN junction of edge, and the back side of silicon wafer is processed by shot blasting, the silicon wafer is then sent out into etching machine bench；
(3) it is sent into feed belt after carrying out overturning processing to the silicon wafer, so that the front of silicon wafer is contacted with feed belt；
(4) silicon wafer feeding is held in part using feed belt, as the part that holds is sequentially through acid tank, third sink and baking
Dry slot removes the phosphorosilicate glass layer of front side of silicon wafer, and it is cleaned and is dried.
2. according to claim 1 a kind of for improving the production method of PERC battery, it is characterised in that: the step
(2) in the front side of silicon wafer is sent into etching machine bench upward, the silicon chip edge is removed by the mixed solution in etching machine bench
PN junction, and the back side of silicon wafer is processed by shot blasting, specifically includes following sub-step:
The front side of silicon wafer is sent into etching groove upward, remove silicon chip edge PN junction and silicon chip back side is polished；
The silicon wafer is sent into the first sink after being cleaned, is sent into the porous silicon that alkali trough washery removes silicon chip surface；
The silicon wafer is sent into the second sink after being cleaned, is sent into hot wind slot and is dried the moisture of silicon chip surface using hot wind
It is dry.
3. according to claim 2 a kind of for improving the production method of PERC battery, it is characterised in that: the etching groove
What is inside held is the mixed solution of hydrofluoric acid, nitric acid and water；What is held in the alkali slot is the mixed solution of sodium hydroxide and water；
What is held in first sink and the second sink is pure water.
4. according to claim 2 a kind of for improving the production method of PERC battery, it is characterised in that: the silicon wafer exists
It is transported by roller conveyor sequentially through etching groove, the first sink, alkali slot, the second sink and hot wind slot in etching machine bench.
5. according to claim 1 or 4 a kind of for improving the production method of PERC battery, it is characterised in that: the step
Suddenly in (3) overturning processing is carried out to the silicon wafer after be sent into feed belt so that silicon wafer front contacted with feed belt, tool
Body are as follows:
After silicon wafer comes out from etching machine bench, on the flip piece in etching machine bench exit；
After silicon wafer is completely on flip piece, the flip piece rotates 180 degree, and silicon wafer is put on feed belt, so that
The front of silicon wafer is contacted with feed belt.
6. according to claim 1 a kind of for improving the production method of PERC battery, it is characterised in that: described to hold part
For the gaily decorated basket.
7. according to claim 1 a kind of for improving the production method of PERC battery, it is characterised in that: in the acid tank
What is held is the mixed solution of hydrofluoric acid and water, wherein hydrofluoric acid concentration 5%-15%, soaking time 1-5min.
8. according to claim 1 a kind of for improving the production method of PERC battery, it is characterised in that: the silicon wafer exists
The time impregnated in third sink is 2-5min.
9. according to claim 1 a kind of for improving the production method of PERC battery, it is characterised in that: the drying tank
It is inside passed through hot wind, internal temperature is 50-80 DEG C, drying time 3-6min.
10. according to claim 1 a kind of for improving the production method of PERC battery, it is characterised in that: the utilization
Feed belt by silicon wafer feeding hold in part, with it is described hold part sequentially through acid tank, sink and drying tank step after, also
Include:
Sequentially silicon wafer is aoxidized, carries on the back passivation, PECVD plated film, laser slotting and printing-sintering, forms PERC battery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910297831.2A CN110165016A (en) | 2019-04-15 | 2019-04-15 | It is a kind of for improving the production method of PERC battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910297831.2A CN110165016A (en) | 2019-04-15 | 2019-04-15 | It is a kind of for improving the production method of PERC battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110165016A true CN110165016A (en) | 2019-08-23 |
Family
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| CN201910297831.2A Pending CN110165016A (en) | 2019-04-15 | 2019-04-15 | It is a kind of for improving the production method of PERC battery |
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| CN110993723B (en) * | 2019-10-16 | 2021-10-22 | 晋能光伏技术有限责任公司 | Preparation method of high-quality photovoltaic crystalline silicon cell |
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