CN110740568B - 覆铜层叠板 - Google Patents

覆铜层叠板 Download PDF

Info

Publication number: CN110740568B
Authority: CN; China
Prior art keywords: copper; copper plating; film; chlorine concentration; plating film
Prior art date: 2018-07-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN201910640844.5A

Other languages

English (en)

Chinese (zh)

Other versions

CN110740568A (zh

Inventor

渡边智治

小川茂树

下地匠

西山芳英

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sumitomo Metal Mining Co Ltd

Original Assignee

Sumitomo Metal Mining Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2018-07-18

Filing date

2019-07-16

Publication date

2023-04-28

2019-07-16 Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd

2020-01-31 Publication of CN110740568A publication Critical patent/CN110740568A/zh

2023-04-28 Application granted granted Critical

2023-04-28 Publication of CN110740568B publication Critical patent/CN110740568B/zh

Status Active legal-status Critical Current

2039-07-16 Anticipated expiration legal-status Critical

Links

238000007747 plating Methods 0.000 claims abstract description 148
229910052802 copper Inorganic materials 0.000 claims abstract description 143
239000010949 copper Substances 0.000 claims abstract description 143
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 135
239000000460 chlorine Substances 0.000 claims abstract description 81
229910052801 chlorine Inorganic materials 0.000 claims abstract description 81
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 80
239000013078 crystal Substances 0.000 claims abstract description 35
229910052751 metal Inorganic materials 0.000 claims abstract description 14
239000002184 metal Substances 0.000 claims abstract description 14
238000004458 analytical method Methods 0.000 claims description 6
238000001004 secondary ion mass spectrometry Methods 0.000 claims description 4
238000010030 laminating Methods 0.000 claims description 2
239000000126 substance Substances 0.000 abstract description 32
238000005498 polishing Methods 0.000 abstract description 30
239000012535 impurity Substances 0.000 abstract description 5
239000010408 film Substances 0.000 description 116
230000000052 comparative effect Effects 0.000 description 29
239000000758 substrate Substances 0.000 description 27
238000001878 scanning electron micrograph Methods 0.000 description 20
238000009713 electroplating Methods 0.000 description 19
239000000463 material Substances 0.000 description 16
-1 copper alkane sulfonate salts Chemical class 0.000 description 13
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 11
238000000034 method Methods 0.000 description 11
238000005259 measurement Methods 0.000 description 10
150000001879 copper Chemical class 0.000 description 9
238000009826 distribution Methods 0.000 description 9
230000003746 surface roughness Effects 0.000 description 9
239000000654 additive Substances 0.000 description 8
239000010953 base metal Substances 0.000 description 8
239000010409 thin film Substances 0.000 description 8
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
150000002500 ions Chemical group 0.000 description 6
239000002245 particle Substances 0.000 description 6
229920000642 polymer Polymers 0.000 description 6
101100493710 Caenorhabditis elegans bath-40 gene Proteins 0.000 description 5
239000003795 chemical substances by application Substances 0.000 description 5
229910001120 nichrome Inorganic materials 0.000 description 5
238000005282 brightening Methods 0.000 description 4
239000004020 conductor Substances 0.000 description 4
229910000365 copper sulfate Inorganic materials 0.000 description 4
ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
238000001953 recrystallisation Methods 0.000 description 4
239000011347 resin Substances 0.000 description 4
229920005989 resin Polymers 0.000 description 4
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
239000007788 liquid Substances 0.000 description 3
238000004519 manufacturing process Methods 0.000 description 3
238000001465 metallisation Methods 0.000 description 3
229920001451 polypropylene glycol Polymers 0.000 description 3
150000008054 sulfonate salts Chemical class 0.000 description 3
LMPMFQXUJXPWSL-UHFFFAOYSA-N 3-(3-sulfopropyldisulfanyl)propane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCSSCCCS(O)(=O)=O LMPMFQXUJXPWSL-UHFFFAOYSA-N 0.000 description 2
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
XXACTDWGHQXLGW-UHFFFAOYSA-M Janus Green B chloride Chemical compound [Cl-].C12=CC(N(CC)CC)=CC=C2N=C2C=CC(\N=N\C=3C=CC(=CC=3)N(C)C)=CC2=[N+]1C1=CC=CC=C1 XXACTDWGHQXLGW-UHFFFAOYSA-M 0.000 description 2
FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
230000000996 additive effect Effects 0.000 description 2
229910052804 chromium Inorganic materials 0.000 description 2
239000011651 chromium Substances 0.000 description 2
ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
238000005530 etching Methods 0.000 description 2
239000007789 gas Substances 0.000 description 2
SUMDYPCJJOFFON-UHFFFAOYSA-N isethionic acid Chemical compound OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 description 2
238000001755 magnetron sputter deposition Methods 0.000 description 2
229910052759 nickel Inorganic materials 0.000 description 2
229920001721 polyimide Polymers 0.000 description 2
238000004804 winding Methods 0.000 description 2
OBDVFOBWBHMJDG-UHFFFAOYSA-N 3-mercapto-1-propanesulfonic acid Chemical compound OS(=O)(=O)CCCS OBDVFOBWBHMJDG-UHFFFAOYSA-N 0.000 description 1
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
239000005751 Copper oxide Substances 0.000 description 1
239000004698 Polyethylene Substances 0.000 description 1
239000002202 Polyethylene glycol Substances 0.000 description 1
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
NJSSICCENMLTKO-HRCBOCMUSA-N [(1r,2s,4r,5r)-3-hydroxy-4-(4-methylphenyl)sulfonyloxy-6,8-dioxabicyclo[3.2.1]octan-2-yl] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)O[C@H]1C(O)[C@@H](OS(=O)(=O)C=2C=CC(C)=CC=2)[C@@H]2OC[C@H]1O2 NJSSICCENMLTKO-HRCBOCMUSA-N 0.000 description 1
230000002159 abnormal effect Effects 0.000 description 1
230000001133 acceleration Effects 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
239000003153 chemical reaction reagent Substances 0.000 description 1
229920001577 copolymer Polymers 0.000 description 1
229940116318 copper carbonate Drugs 0.000 description 1
229910000431 copper oxide Inorganic materials 0.000 description 1
OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
RSJOBNMOMQFPKQ-UHFFFAOYSA-L copper;2,3-dihydroxybutanedioate Chemical compound [Cu+2].[O-]C(=O)C(O)C(O)C([O-])=O RSJOBNMOMQFPKQ-UHFFFAOYSA-L 0.000 description 1
GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 description 1
BSXVKCJAIJZTAV-UHFFFAOYSA-L copper;methanesulfonate Chemical compound [Cu+2].CS([O-])(=O)=O.CS([O-])(=O)=O BSXVKCJAIJZTAV-UHFFFAOYSA-L 0.000 description 1
BDHAOBSBMMJNGS-UHFFFAOYSA-N copper;propan-1-olate Chemical compound [Cu+2].CCC[O-].CCC[O-] BDHAOBSBMMJNGS-UHFFFAOYSA-N 0.000 description 1
NPSDYIWFLLIHOT-UHFFFAOYSA-L copper;propane-1-sulfonate Chemical compound [Cu+2].CCCS([O-])(=O)=O.CCCS([O-])(=O)=O NPSDYIWFLLIHOT-UHFFFAOYSA-L 0.000 description 1
238000001514 detection method Methods 0.000 description 1
FWBOFUGDKHMVPI-UHFFFAOYSA-K dicopper;2-oxidopropane-1,2,3-tricarboxylate Chemical compound [Cu+2].[Cu+2].[O-]C(=O)CC([O-])(C([O-])=O)CC([O-])=O FWBOFUGDKHMVPI-UHFFFAOYSA-K 0.000 description 1
238000007865 diluting Methods 0.000 description 1
YIOJGTBNHQAVBO-UHFFFAOYSA-N dimethyl-bis(prop-2-enyl)azanium Chemical compound C=CC[N+](C)(C)CC=C YIOJGTBNHQAVBO-UHFFFAOYSA-N 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000009499 grossing Methods 0.000 description 1
238000009413 insulation Methods 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
229920000573 polyethylene Polymers 0.000 description 1
229920001223 polyethylene glycol Polymers 0.000 description 1
238000001556 precipitation Methods 0.000 description 1
239000011780 sodium chloride Substances 0.000 description 1
238000005507 spraying Methods 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
238000003756 stirring Methods 0.000 description 1
BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
229910052717 sulfur Inorganic materials 0.000 description 1
239000011593 sulfur Substances 0.000 description 1
238000011144 upstream manufacturing Methods 0.000 description 1

Images

Classifications

- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/05—Flexible printed circuits [FPCs]

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Mechanical Engineering (AREA)
Electrochemistry (AREA)
Microelectronics & Electronic Packaging (AREA)
Electroplating Methods And Accessories (AREA)
Laminated Bodies (AREA)
Other Surface Treatments For Metallic Materials (AREA)

CN201910640844.5A 2018-07-18 2019-07-16 覆铜层叠板 Active CN110740568B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2018134850A JP7103006B2 (ja)	2018-07-18	2018-07-18	銅張積層板
JP2018-134850		2018-07-18

Publications (2)

Publication Number	Publication Date
CN110740568A CN110740568A (zh)	2020-01-31
CN110740568B true CN110740568B (zh)	2023-04-28

Family

ID=69170580

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN201910640844.5A Active CN110740568B (zh)	2018-07-18	2019-07-16	覆铜层叠板

Country Status (4)

Country	Link
JP (1)	JP7103006B2 (ja)
KR (2)	KR20200010033A (ja)
CN (1)	CN110740568B (ja)
TW (1)	TWI793350B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP7343280B2 (ja) *	2019-02-15	2023-09-12	住友金属鉱山株式会社	銅張積層板の製造方法
JP7230564B2 (ja) *	2019-02-15	2023-03-01	住友金属鉱山株式会社	銅張積層板の製造方法
KR102362580B1 (ko) *	2020-05-07	2022-02-15	동아대학교 산학협력단	다층 구리박의 제조를 위한 전기도금장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2000087292A (ja) *	1998-09-14	2000-03-28	Ibiden Co Ltd	電気めっき方法、電気めっきによる回路板及びプリント配線板の製造方法、並びに銅被膜からなる回路を有する回路板及び銅被膜からなる配線を有するプリント配線板
JP2008130585A (ja) *	2006-11-16	2008-06-05	Sumitomo Metal Mining Co Ltd	銅被覆ポリイミド基板とその製造方法
JP2008294432A (ja) *	2007-04-26	2008-12-04	Mitsui Mining & Smelting Co Ltd	プリント配線板及びそのプリント配線板の製造方法並びにそのプリント配線板の製造に用いる銅張積層板用電解銅箔

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2006278950A (ja)	2005-03-30	2006-10-12	Fujikura Ltd	プリント配線板およびその製造方法
JP2009295656A (ja) *	2008-06-03	2009-12-17	Sumitomo Metal Mining Co Ltd	フレキシブル配線板用基板及びその製造方法
JP5587567B2 (ja) *	2009-07-07	2014-09-10	株式会社Ｊｃｕ	銅めっき方法

2018
- 2018-07-18 JP JP2018134850A patent/JP7103006B2/ja active Active
2019
- 2019-06-10 KR KR1020190068158A patent/KR20200010033A/ko not_active IP Right Cessation
- 2019-07-15 TW TW108124868A patent/TWI793350B/zh active
- 2019-07-16 CN CN201910640844.5A patent/CN110740568B/zh active Active
2023
- 2023-10-25 KR KR1020230143671A patent/KR20230152633A/ko active Search and Examination

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2000087292A (ja) *	1998-09-14	2000-03-28	Ibiden Co Ltd	電気めっき方法、電気めっきによる回路板及びプリント配線板の製造方法、並びに銅被膜からなる回路を有する回路板及び銅被膜からなる配線を有するプリント配線板
JP2008130585A (ja) *	2006-11-16	2008-06-05	Sumitomo Metal Mining Co Ltd	銅被覆ポリイミド基板とその製造方法
JP2008294432A (ja) *	2007-04-26	2008-12-04	Mitsui Mining & Smelting Co Ltd	プリント配線板及びそのプリント配線板の製造方法並びにそのプリント配線板の製造に用いる銅張積層板用電解銅箔

Also Published As

Publication number	Publication date
KR20200010033A (ko)	2020-01-30
KR20230152633A (ko)	2023-11-03
JP7103006B2 (ja)	2022-07-20
CN110740568A (zh)	2020-01-31
TW202014067A (zh)	2020-04-01
TWI793350B (zh)	2023-02-21
JP2020011441A (ja)	2020-01-23

Legal Events

Date	Code	Title
2020-01-31	PB01	Publication
2020-01-31	PB01	Publication
2020-09-18	SE01	Entry into force of request for substantive examination
2020-09-18	SE01	Entry into force of request for substantive examination
2023-04-28	GR01	Patent grant
2023-04-28	GR01	Patent grant

Publication	Publication Date	Title
CN110740568B (zh)	2023-04-28	覆铜层叠板
JP7107190B2 (ja)	2022-07-27	銅張積層板の製造方法
CN110740567B (zh)	2023-05-26	覆铜层叠板
JP7107189B2 (ja)	2022-07-27	銅張積層板および銅張積層板の製造方法
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