CN110648989A - 一种芯片植球用键合丝 - Google Patents

一种芯片植球用键合丝 Download PDF

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CN110648989A
CN110648989A CN201910961734.9A CN201910961734A CN110648989A CN 110648989 A CN110648989 A CN 110648989A CN 201910961734 A CN201910961734 A CN 201910961734A CN 110648989 A CN110648989 A CN 110648989A
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ball planting
chip
wire
bonding wire
chip ball
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李天祥
张冠忠
杨松青
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Chongqing Xinqipai Electronic Technology Co Ltd
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Chongqing Xinqipai Electronic Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
    • C21D9/52—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length
    • C21D9/525—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length for wire, for rods
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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Abstract

本发明公开了一种芯片植球用键合丝的方法。所采用的技术方案：对金银等金属提纯以保证其纯度为99.9999%。高真空熔炼，充高纯氩气保护下拉式熔炼方式，拉铸成合金棒。熔炼温度1000‑1500℃，拉铸速度10mm/min‑100mm/min。冷却水流速为1‑10L/min。

Description

一种芯片植球用键合丝
技术领域
本发明涉及材料技术领域，采用高真空熔炼技术使熔融的金、银溶液均匀融合，采用下拉式熔铸成坯杆，经过拉丝、中间回火、退火、绕线制备出芯片植球用键合丝。
技术背景
目前市场上IC封装线片植球用键合丝是以纯金添加微量元素为主的产品。黄金价格居高不下的情况下，给生产企业和使用企业到来了高昂的成本。利用高真空熔炼技术使熔融的金、银溶液均匀融合，采用下拉式熔铸成坯杆，经过拉丝、中间回火、退火、绕线制备出芯片植球用键合丝。市场还没有推出通过合金化生产芯片植球用键合丝。
发明内容
本发明提供了一种芯片植球用键合丝材料，通过高真空熔炼技术是金、银以及添加的微量元素均匀融合，再经过正火，细化组织，改善材料的性能，获得接***衡状态的组织，增加材料的塑性。经过拉丝、中间回火、退火、绕线制备出芯片植球用键合丝。实验证明，该准晶键合银丝有效克服了普通金丝的强度偏低，容易出现小尾巴的缺点，具有焊接性能好，可靠性强等优点，并且降低成本60%左右。
本发明所采用的技术方案为：该键合金丝的成分和含量如下（重量百分比）：金45-50%，银55-50%，钯1-5%，稀土5-50ppm。
本发明还提出了一种制备该芯片植球用键合丝的方法，所述方法包括以下步骤：
1、金属材料：采用金、银、钯等纯度大于6N的高纯金属。
2、真空熔炼：采用高真空融炼，充高纯氩气保护的方式进行下拉式熔炼。高真空和高纯氩气保护能够最大限度保护添加微量元素不被氧化，保证添加元素的准确性和均匀性。
3、拉丝：拉铸后的棒材在拉丝机上逐步拉细，直至要求的直径。其拉丝过程中的模具延伸率为4%-20%，拉丝速度为1-20m/s。
4、中间正火：中间正火温度400-600℃，保温4小时以上，随炉冷却道室温，再拉丝到成品
4、退火：退火温度为300-600℃，速度0.5-2m/s。
5、绕线：将丝线分绕成不同长度的小轴，速度为0.2-5m/s。
与现有技术相比，本发明的芯片植球用键合丝具有以下显著的优点和有益效果：
1、本发明的芯片植球用键合丝有效克服了普通金丝的强度偏低，容易出现小尾巴的缺点，具有焊接性能好，可靠性强等优点。
2、成本降低60%左右。
具体实施方式
下面结合具体实施例对本发明进一步详细说明
本发明芯片植球用键合丝按以下工艺步骤制备：
1、提纯：采用二次电解提纯技术，所有添加金属的纯度要达到6N以上。
2、熔炼：熔铸设备为高真空熔铸机，拉铸方式为连续拉铸，拉铸速度为10-100mm/min，熔铸温度为1000-1500℃。液氮流速为1-10L/min.
3、拉丝：拉丝速度为1-20m/s。
4、中间正火：退火温度400-600℃
5、退火速度为0.5-5m/s，温度为400℃-500℃。
6、绕线速度为1.5m/s。

Claims (5)

1.一种芯片植球用键合丝，其特征在于：所采用原材料的纯度为99.9999%。
2.一种芯片植球用键合丝，其特征在于：高真空熔炼技术是金、银以及添加的微量元素均匀融合，再经过高温回火，使添加微量元素均匀析出在晶界间，增加材料的塑性。
3.一种芯片植球用键合丝，其特征在于：熔炼温度1000-1500℃，拉铸速度10mm/min-100mm/min，冷却水流速为1-10L/min。
4.一种芯片植球用键合丝，其特征在于：其拉丝过程中的模具延伸率为4%-20%，拉丝速度为1-20m/s。
5.一种芯片植球用键合丝，其特征在于：退火温度为300-600℃，速度0.5-2m/s。
CN201910961734.9A 2019-10-11 2019-10-11 一种芯片植球用键合丝 Pending CN110648989A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115948675A (zh) * 2022-12-06 2023-04-11 合肥矽格玛应用材料有限公司 一种键合银丝的三元配方及制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101591744A (zh) * 2009-06-25 2009-12-02 北京航空航天大学 一种超塑性Ti-Al-Nb-Er合金材料及其制备方法
CN102776405A (zh) * 2012-07-25 2012-11-14 烟台招金励福贵金属股份有限公司 一种键合金银合金丝的制备方法
CN103779309A (zh) * 2014-01-20 2014-05-07 江西蓝微电子科技有限公司 镀金金银钯合金单晶键合丝及其制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101591744A (zh) * 2009-06-25 2009-12-02 北京航空航天大学 一种超塑性Ti-Al-Nb-Er合金材料及其制备方法
CN102776405A (zh) * 2012-07-25 2012-11-14 烟台招金励福贵金属股份有限公司 一种键合金银合金丝的制备方法
CN103779309A (zh) * 2014-01-20 2014-05-07 江西蓝微电子科技有限公司 镀金金银钯合金单晶键合丝及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115948675A (zh) * 2022-12-06 2023-04-11 合肥矽格玛应用材料有限公司 一种键合银丝的三元配方及制备方法

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Application publication date: 20200103