CN110600455A - 一种内置电容的ic芯片及封装方法 - Google Patents

一种内置电容的ic芯片及封装方法 Download PDF

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CN110600455A
CN110600455A CN201910910344.9A CN201910910344A CN110600455A CN 110600455 A CN110600455 A CN 110600455A CN 201910910344 A CN201910910344 A CN 201910910344A CN 110600455 A CN110600455 A CN 110600455A
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肖传兴
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Jiangsu Salt Core Microelectronics Co Ltd
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Abstract

本发明提供了一种内置电容的IC芯片及封装方法，该IC芯片包括框架载体及固定在框架载体上的芯片裸片和电容，电容两端导电极镀金或镀银，电容通过键合丝连接在芯片裸片的外接点与框架载体的外接管脚上，框架载体及固定在框架载体上的芯片裸片及电容均被封装在封装材料中；其封装方法为在框架载体的键合位置分别涂布导电的粘合剂1和绝缘的粘合剂2，将芯片裸片放置在粘合剂1上，将电容放置在粘合剂2上，固化后通过键合丝将电容接在芯片裸片的外接点与框架载体的外界引脚上，最后进行封装。本发明将电容集成到芯片内，减少了芯片的外接引脚，提高了芯片的集成度，提升了芯片的抗噪声能力，降低了终端的生产成本。

Description

一种内置电容的IC芯片及封装方法
技术领域
本发明涉及微电子信息技术领域，特别涉及一种内置电容的IC芯片及封装方法。
背景技术
PCB（印刷电路板）中电力线会拾取其它地方的高频噪声，然后通过电场、磁场、电磁场和直接传导等方式耦合到***中，进而影响许多电路的性能，因此，必须将IC芯片电源上存在的任何高频噪声短接到地，通常采用电容来实现高频噪声的短路连接。许多IC芯片中的电路会在电源端产生高频噪声，这种噪声也必须通过跨接在电源上的电容进行短路，以免破坏***的其它部分。
传统IC芯片都是通过PCB板外接电容进行使用，这导致IC芯片封装时需增加额外的引脚来连接电容，进而增加了IC芯片体积，不利于电路的高度集成化；另外传统产品使用一颗IC芯片需在PCB板上附加4颗电容，增加了终端产品的生产成本，同时连接电容的导线的电感会对IC芯片产生一定的噪声，不利于电路的稳定。
发明内容
传统镀锡电容由于锡金属无法与键合丝（金丝/银丝/铜丝/铝丝）结合，无法集成到IC芯片内。导致IC芯片封装时需增加额外的引脚来连接电容，进而增加了IC芯片体积，不利于电路的高度集成化。本发明实施例提供了一种内置电容的IC芯片及封装方法，解决了传统镀锡电容无法封装在IC芯片内的问题。
第一方面，本发明实施例提供了一种内置电容的IC芯片，所述IC芯片包括：
框架载体、键合在框架载体上的芯片裸片及电容，所述框架载体是引线框架或PCB基板，所述框架载体具有键合位置及外接管脚，所述电容的两个导电极是镀金或镀银的，所述框架载体和键合在框架载体上的芯片裸片及电容均被包裹在封装材料中。
在第一方面的第一种可能的实现方式中，所述电容的数量是1个或1个以上。
结合第一方面或在第一方面的第一种可能的实现方式中，所述电容通过键合丝连接在芯片裸片外接点与框架载体外接管脚之间。
结合第一方面或在第一方面的第一种或第二种可能的实现方式中，所述键合丝是金丝、银丝、铜丝或铝丝。
结合第一方面或在第一方面的第一种或第二种或第三种可能的实现方式中，所述芯片的数量是1个或1个以上。
结合第一方面或在第一方面的第一种或第二种或第三种或第四种可能的实现方式中，所述包裹材料是环氧树脂、陶瓷或金属。
第二方面，本发明实施例还提供了一种封装方法，所述方法包括：
在框架载体键合位置分别涂布粘合剂1和粘合剂2；
将芯片裸片放置在粘合剂1上；
将电容放置在粘合剂2上；
对粘合剂进行固化；
通过键合丝将电容与芯片裸片外接点与框架载体的外接管脚连接；
封装框架载体和键合在框架载体上的芯片裸片及电容。
在第二方面的第一种可能的实现方式中，粘合剂1是导电防腐的。
结合第二方面或在第二方面的第一种可能的实现方式中，粘合剂2是绝缘防腐的。
结合第二方面或在第二方面的第一种或第二种可能的实现方式中，固化方法是烘烤、软熔焊接或光照。
由以上技术方案可知，本发明实施例提供了一种内置电容的IC芯片及封装方法，通过改变电容导电极镀层材质实现电容与键合丝的粘合，从而实现电容的封装，减少了IC芯片管脚的数量，提高了IC芯片的集成度；同时由于电容集成在IC芯片内，连接电容的导线长度可以忽略不计，提升了IC芯片的抗噪声能力；另外只需集成两颗电容到IC芯片内就可以替代PCB板上的4颗电容，既降低了终端的生产成本，又减少PCB板了印刷电容的电路的工作，实现了节能减排，减少污染。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。通过附图所示，本发明的上述及其它目的、特征和优势将更加清晰。在全部附图中相同的附图标记指示相同的部分。并未刻意按实际尺寸等比例缩放绘制附图，重点在于示出本发明的主旨。
图1为内置电容的IC芯片的结构示意图。
图2为内置电容的IC芯片封装流程图。
图3为IC芯片改善前结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整的描述，显然，所描述的实施例仅仅是本发明部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
参照图1，为本发明实施例提供的内置电容的IC芯片的结构示意图，所述内置电容的IC芯片包括框架载体（1）、芯片裸片（2）和电容（3），框架载体（1）是引线框架或PCB基板，框架载体（1）具有键合位置（11）及外接管脚（12），电容（3）的两个导电极（31）是镀金或镀银的，芯片裸片（2）通过粘合剂1固定在框架载体的键合位置（11），电容（3）通过粘合剂2固定在框架载体的键合位置（11）的其他位置上。
电容（3）通过键合丝（4）连接在芯片裸片（2）外接点（21）与框架载体外接管脚（12）之间，所述键合丝（4）为任意已知或即将出现的用于键合的材质，比如金丝、银丝、铜丝或铝丝。
框架载体（1）及键合在框架载体（1）上的芯片裸片（2）和电容（3）均被封装在包装材料中，所述封装材料可以是任意已知或即将出现的材料，比如说环氧树脂、陶瓷或金属。
在实际应用中，电容（3）的数量是1个或1个以上，IC内封装的芯片（2）的数量是1个或1个以上。
参照图2，为本发明内置电容的IC芯片封装方法流程图，所述方法包括以下步骤：
步骤101，在框架载体键合位置分别涂布粘合剂1和粘合剂2；其中，所述粘合剂1和粘合剂2的涂布位置根据所述IC芯片的功能和所采用的封装方式不同而进行不同的设置，本发明对此不作限制；粘合剂1可以是任意已知的或即将出现的导电防腐蚀的材料，比如说银浆，本发明对此不作限制；粘合剂2可以是任意已知的或即将出现的绝缘防腐蚀的材料，比如说环氧树脂，本发明对此不作限制。
步骤102，将芯片裸片放置在粘合剂1上；所述装片方法为相关技术领域人员所熟知的技术，本发明对此不再赘述。
步骤103，将电容放置在粘合剂2上；所述装电容方法为相关技术领域人员所熟知的技术，本发明对此不再赘述。
步骤104，对粘合剂进行固化，所述固化方法包含任意已知的或即将出现的方法，比如说烘烤、软熔焊接或光照；
步骤105，通过键合丝将电容与芯片裸片外接点与框架载体的外接管脚连接；所述键合线连接方法为相关技术领域人员所熟知的技术，本发明对此不再赘述。
步骤106，封装框架载体和键合在框架载体上的芯片裸片及电容；需要指出的是，所述封装材料可以为任意己知或即将出现的适合用作封装的材料，比如，可以是环氧树脂、陶瓷或者金属。
以上所述，仅是本发明的较桂实施例而己，并非对本发明作任何形式上的限制。虽然本发明己以较佳实施例披露如上，然而并非用以限定本发明。任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同变化及修饰，均仍属于本发明技术方案保护的范围内。

Claims (10)

1.一种内置电容的IC芯片，其特征在于，所述IC芯片包括：
框架载体、键合在框架载体上的芯片裸片及电容，所述框架载体是引线框架或PCB基板，所述框架载体具有键合位置及外接管脚，所述电容的两个导电极是镀金或镀银的，所述框架载体和键合在框架载体上的芯片裸片及电容均被包裹在封装材料中。
2.根据权利要求1所述的IC芯片，其特征在于：所述电容的数量是1个或1个以上。
3.根据权利要求1或2所述的IC芯片，其特征在于：所述电容通过键合丝串联在芯片裸片外接点与框架载体外接管脚之间。
4.根据权利要求3所述的IC芯片，其特征在于：所述键合丝是金丝、银丝、铜丝或铝丝。
5.根据权利要求4所述的IC芯片，其特征在于：所述芯片的数量是1个或1个以上。
6.根据权利要求5所述的IC芯片，其特征在于：所述包裹材料是环氧树脂、陶瓷或金属。
7.一种封装方法，其特征在于，所述方法包括：
在框架载体键合位置分别涂布粘合剂1和粘合剂2；
将芯片裸片放置在粘合剂1上；
将电容放置在粘合剂2上；
对粘合剂进行固化；
通过键合丝将电容与芯片裸片外接点与框架载体的外接管脚连接；
封装框架载体和键合在框架载体上的芯片裸片及电容。
8.根据权利要求7所述的封装方法，其特征在于：粘合剂1是导电防腐的。
9.根据权利要求7所述的封装方法，其特征在于：粘合剂2是绝缘防腐的。
10.根据权利要求9所述的封装方法，其特征在于：固化方法是烘烤、软熔焊接或光照。
CN201910910344.9A 2019-09-25 2019-09-25 一种内置电容的ic芯片及封装方法 Pending CN110600455A (zh)

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