CN110557077B - 半导体模块 - Google Patents

半导体模块 Download PDF

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CN110557077B
CN110557077B CN201910455251.1A CN201910455251A CN110557077B CN 110557077 B CN110557077 B CN 110557077B CN 201910455251 A CN201910455251 A CN 201910455251A CN 110557077 B CN110557077 B CN 110557077B
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shunt resistor
semiconductor module
terminal
electrode
switching element
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CN110557077A (zh
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大前胜彦
船越政行
竹内谦介
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于，获得能高精度地测定放置、连接于基板的分流电阻两端的电位差、并能提高电流检测精度的半导体模块。具有焊盘(11c、11d)，该焊盘(11c、11d)为基板(104c、104d)的一部分，放置、连接有分流电阻103U的电极。焊盘(11c、11d)形成有切分为主电流流动的主电路与检测分流电阻(103U)的电极的电位的控制端子(123、124)的狭缝(130、131)，狭缝(130、131)的前端部延伸至分流电阻(103U)的电极附近。

Description

半导体模块
技术领域
本发明涉及内置有半导体开关元件及分流电阻的半导体模块。
背景技术
以往的半导体模块中，排列与电源相连接的电源端子、接地的接地端子、用于向电动机进行供电的输出端子、用于控制半导体开关元件的控制端子等多个端子，在内部配置、连接有半导体开关元件、电流检测用的分流电阻等(例如参照专利文献1的图2)。
现有技术文献
专利文献
专利文献1：日本专利第6223613号公报
发明内容
发明所要解决的问题
专利文献1所公开的半导体模块的内部结构中，在由铜或铜合金的板材形成的多个基板(相当于专利文献1的框架41)设有用于放置元件的宽幅的焊盘(land)，在该焊盘放置高电位侧开关元件、低电位侧开关元件，在低电位侧开关元件的下游连接有分流电阻，分流电阻的另一端接地。此外，从放置有分流电阻的焊盘(基板的除控制端子等端子以外的大致长方形的部分)的端部延伸出用于检测分流电阻的电极的电位的检测用端子。接地并从上述焊盘延伸出的检测用端子在端子的布局上位于远离分流电阻的左端侧的电极的位置。
并且，在上述焊盘的任意焊盘中，出于有效地将基板的热量传导至散热器来进行冷却的目的，还形成为用于增大表面积的宽幅，上述检测用端子与上述电极之间的距离变得更长。
接着，下面对专利文献1所公开的半导体模块所引起的问题进行阐述。图1是将专利文献1所公开的半导体模块的一部分进行放大后的图，图中的箭头表示电流的流动，分为直线流动的路径、迂回流动的路径等多个路径进行流动。
基板41由铜或铜合金形成，具有微小的电阻，电阻值与电路的长度成正比。对于分流电阻33U，例如在检测100A左右的电流的电动助力转向装置中，使用用于抑制分流电阻的发热、电压降的1mΩ左右的分流电阻。如上所述，端子的布局上，检测用端子415与分流电阻33U的左端侧的电极之间的距离变长，因此存在无法忽略的程度的电阻。
若用电路图来将其示出，则成为图2那样。电流流过基板41与电流流过上述电阻同义，此处会引起电压降。如图2所示，检测用端子415及417检测除了分流电阻33U两端的电极电位以外、也将上述电阻所引起的电压降包含在内的电位差。该电压降成为误差，无法高精度地测定分流电阻33U两端的电位差，具有降低电流检测精度的问题。
并且，众所周知，铜、铜合金的电阻值根据温度变化而变动。若电流流过上述基板41，基板41的温度因发热而变化，电阻值发生变动。若上述电阻值变动，则即使流过此处的电流值固定，此处产生的电压降也会发生变动，检测用端子415及417之间产生的电位差根据温度而变动，因此电流检测精度进一步下降。
本发明是为了解决上述问题而完成的，其目的在于，获得能高精度地测定分流电阻两端的电位差、并能提高电流检测精度的半导体模块。
解决技术问题的技术方案
本发明所涉及的半导体模块包括：多个基板，该多个基板以导电性材料形成为板状；功率端子，该功率端子从基板延伸出；焊盘，该焊盘为多个基板的一部分，并用于放置、连接元件；开关元件，该开关元件放置、连接于焊盘，并控制流过功率端子的电流；以及分流电阻，该分流电阻放置、连接于焊盘，该半导体模块的特征在于，在放置、连接有分流电阻的焊盘中形成有切分为主电流流动的主电路与检测分流电阻的电极的电位的检测用端子的狭缝，狭缝的前端部延伸至分流电阻的电极附近。
发明效果
根据本发明所涉及的半导体模块，在放置、连接有分流电阻的焊盘中，以使前端部延伸至分流电阻的电极附近的方式形成狭缝，切分为主电流流动的主电路和检测用端子，限制主电流流入检测用端子侧，抑制上述电压降的发生，从而能抑制检测将上述电压降包含在内的电位差，能高精度地测定分流电阻两端的电位差，能提高电流检测精度。
附图说明
图1是将专利文献1的图2所公开的半导体模块中的一部分进行放大后的图。
图2是以电路图示出图1而得的图。
图3是包含本发明申请的实施方式1所涉及的半导体模块100a在内的电动助力转向装置整体的电路图。
图4是表示本发明申请的实施方式1所涉及的半导体模块100a的内部结构的图。
图5是将图4的半导体模块100a的内部结构中的U相的部分放大后的图。
图6是表示本发明申请的实施方式2所涉及的半导体模块100b的内部结构的图。
图7是将本发明申请的实施方式3所涉及的半导体模块100c中的一相的桥式电路图及其电路进行半导体模块化后的情况下的内部结构图。
具体实施方式
实施方式1.
对利用了本发明的实施方式1所涉及的半导体模块100a的装置进行说明。此处，作为示例，说明将半导体模块100a搭载于电动助力转向装置的情况。图3是包含半导体模块100a的整个电动助力转向装置的电路图，主要由控制单元1、用于辅助方向盘转向的电动机2、旋转角传感器4、电流传感器5、旋转角传感器4与电流传感器5以外的传感器组6构成，控制单元1由控制电路3、电源供给用的电源继电器7、滤波用电容器8、半导体模块100a构成。电动机2是三相(U相、V相、W相)的无刷电动机。控制电路3由CPU30、驱动电路31、输入电路32、电源电路33构成。旋转角传感器4、电流传感器5、传感器组6与控制电路3电连接。另外，本发明中，作为电流传感器5使用分流电阻。电源9、接地10之间并联连接有多个滤波用电容器8。
若将点火开关11导通，则电源电路33分别开始向CPU30、驱动电路31、输入电路32进行供电。基于由旋转角传感器4检测出的旋转角信息、电流传感器5检测出的各相的电流值信息、传感器组6检测出的转向转矩信息和车速信息，从输入电路32向CPU30输出信号。CPU30基于上述信息运算用于驱动电动机2的目标电流，根据目标电流与电流值信息的偏差向驱动电路31输出指令，驱动电路31基于该输出指令驱动半导体模块100a、电源继电器7的各元件。
如上所述，电动机2为三相(U相、V相、W相)，因此本实施方式所涉及的半导体模块100a由三相的桥式电路构成。各相独立，为相同的电路结构，因此仅对一相(U相)进行说明。半导体模块100a中高电位侧开关元件101U与低电位侧开关元件102U串联连接，其中间连接部连接有作为供电目标的电动机2的线圈(负载输出)。此外，低电位侧开关元件102U的下游连接有用于检测电流的分流电阻103U。并且，电源9经由电源继电器7连接到高电位侧开关元件101U，接地10连接到分流电阻103U的另一端。
在以上那样构成的电动助力转向装置的半导体模块100a中，图中的圆圈表示控制端子，双圆圈表示功率端子。此处，功率端子可以说是与电源9、接地10、电动机2相连接的端子。控制端子是指用于控制、检测的小功率端子，此处是指高电位侧开关元件101U、低电位侧开关元件102U的栅极指令端子、连接到分流电阻103U的两端的电极的检测用端子、检测高电位侧开关元件101U与低电位侧开关元件102U的中间连接点的电位的监视用端子等。
接着，对实施方式1所涉及的半导体模块100a的内部结构进行说明。图4表示示出了半导体模块100a的内部结构的(a)正面与(b)侧面的透视图。以单点划线包围的部分是包围半导体模块100a的模塑树脂体，控制端子及功率端子延伸到模塑树脂体外部。电动机2的三相桥式电路各相独立，为相同的电路结构，因此仅对图4(a)右侧的U相进行说明。半导体模块100a具有由铜或铜合金形成的多个板状的基板104。焊盘11a～11d(图4(a)中以虚线包围的部分)是用于放置、连接分流电阻103U、半导体开关元件等元件的部分，宽幅地形成。端子从焊盘11a～11d延伸，U相中，从图中下侧的右方开始排列有与电源相连接的电源端子110、与作为供电目标的电动机2的线圈相连接的电动机输出端子111、接地的接地端子112的各功率端子。
与功率端子列相对的边排列有控制端子。控制端子120是检测基板104b的电位的监视用端子。控制端子121及122分别是向高电位侧开关元件101U及低电位侧开关元件102U的栅极施加电压的栅极指令端子。控制端子123及124是检测分流电阻103U两端的电极的电位的检测用端子，从放置、连接有分流电阻103U的电极的焊盘11c、11d延伸而出。能从该分流电阻103U两端的电极的电位差换算为电流。即、基板104a～104d由焊盘、功率端子、控制端子构成。
高电位侧开关元件101U与低电位侧开关元件102U是MOSFET(以下简称为FET)。高电位侧开关元件101U的漏极部与基板104a相连接，漏极部的上部的源极部与跳线106a的一端相连接，跳线106a的另一端与基板104b相连接。基板104b放置、连接有低电位侧开关元件102U。低电位侧开关元件102U的漏极部与基板104b相连接，漏极部的上部的源极部与跳线106b的一端相连接，跳线106b的另一端与基板104c相连接。跳线106a、106b也由铜或铜合金形成，如图4(b)所示那样呈桥状。引线键合105a连接控制端子121与高电位侧开关元件101U的栅极，引线键合105b连接控制端子122与低电位侧开关元件102U的栅极。
基板104c放置、连接有分流电阻103U一端的电极，分流电阻103U另一端的电极放置、连接于基板104d。
接着，对形成于基板104c、104d的狭缝130、131进行说明。狭缝130、131形成为各自的前端部从焊盘11c、11d外周部延伸至分流电阻103U的电极附近。
图5是将图4的半导体模块100a的内部结构中的U相的部分放大后的图。图中的箭头模拟电流的流动，利用控制端子123及124检测分流电阻103U的电极的电位，并换算为电流。在检测分流电阻103U的电极的电位时，如技术问题所述的那样，也会检测出因迂回至控制端子123侧、124侧的电流而产生的电压降，电流检测精度降低。因此，以前端部延伸至分流电阻103U的电极附近的方式形成直线状的狭缝130、L字形的狭缝131，将焊盘11c及11d切分成主电流流动的主电路与控制端子123及124，对主电流流入控制端子123侧及124侧的情况进行限制。
通过对主电流流入控制端子123侧及124侧的情况进行限制，从而能防止在控制端子123、124检测分流电阻103U两端的电位时也检测出焊盘11c、11d所产生的电压降，能高精度地测定分流电阻103U两端的电位差，提高电流检测精度。
并且，通过形成狭缝130、131将焊盘11c、11d切分成主电路与控制端子123及124，从而主电流流至控制端子123侧及124侧的路径被狭缝130、131所切断，在图2所示的控制端子123、124的检测范围内，不会受到焊盘11c、11d的电阻的影响。因此，即使基板104c、104d发生温度变化，也不会受到温度变化的影响，能确保电流检测精度。
考虑例如半导体模块搭载于电动助力转向装置的情况。通过向各相的桥式电路进行供电来进行电动机的驱动，但若流至各相的基板的电流值不同，则发热量也不同，基板的温度也根据相的不同而不同。并且，各相的电阻值也因温度的不同而不同，因此在基板上未形成上述狭缝的以往的半导体模块中，如之前所述，电流检测值所包含的误差也根据相的不同而不同。控制单元基于包含上述误差在内的信息进行控制，因此提供给各相的线圈的电力因误差的差异的影响而不均匀，该不均匀的电力成为转矩脉动从而给方向盘转向带来不适感。
此处，通过在基板形成上述狭缝，由此对成为上述误差的原因的电流的迂回进行限制，能对检测用端子也检测出上述误差的情况进行抑制，从而控制单元能基于适当的信息进行控制，能向各相的线圈提供均匀的电力，能抑制转矩脉动的产生。
作为一例，设基板的厚度为0.6mm、狭缝的前端部与分流电阻的电极之间的距离为1mm时，误差约为±2％，能获得抑制上述转矩脉动的产生的电动助力转向装置。
接着，对功率端子列与控制端子列的排列关系进行说明。如图4(a)所示，所有的功率端子配置、排列于半导体模块100a的图中下侧。另一方面，所有的控制端子排列于与功率端子列相对的上侧的边。
由此，通过将功率端子列与控制端子列分离地排列在不同的边，从而能将控制端子与电流的导通、断开控制时的开关噪声分离，提高抗噪性。
接着，对接地端子112和分流电阻103U之间的位置关系进行说明。例如，如日本专利第5201171号公报的图20所示，已知在功率端子列与控制端子列以互相相对的方式排列而成的基板中，分流电阻放置、连接于控制端子列侧的情况。在如上结构的半导体模块中，分流电阻的电极与接地端子之间的距离变长，因此分流电阻的电极与接地端子之间存在无法忽略的程度的电感分量，若进行半导体开关元件的开关控制，则产生因该电感而产生的自感应电动势。在利用电流检测电路(例如差动放大器电路)进行检测时，该自感应电动势成为引起电路的误动作的原因，成为电流检测的误差，导致电流检测精度的下降。
因此，如图4(a)所示，将分流电阻103U的两端的电极放置、连接于排列有接地端子112的功率端子列侧，缩短接地端子112与分流电阻103U的电极之间的距离，从而能使电感缩小至能忽略的程度，能防止自感应电动势所引起的电流检测的误差，能确保电流检测精度。
并且，若将对三相的桥式电路汇总地进行树脂模塑而一体化后的半导体模块100a与并列地布线有三个对一相的桥式电路进行树脂模塑后的半导体模块的半导体模块相比，能期待小型化、省空间化。
实施方式2.
对本发明的实施方式2所涉及的半导体模块100b进行说明。图6表示半导体模块100b的内部结构。以单点划线包围的部分是包围半导体模块100b的模塑树脂体，功率端子及控制端子延伸到模塑树脂体外部。作为电路结构是对实施方式1所涉及的半导体模块100a的电路结构增加了图3的电源继电器7而得的电路结构。该电源继电器7与半导体开关元件同样地由FET构成，配置于半导体模块100b的右端。从右端起依次配置有电源继电器7、U相桥式电路、V相桥式电路、W相桥式电路。图中下侧的边分离排列有功率端子列，图中上侧的边分离配置有控制端子列。
功率端子列作为电源继电器7的输入输出端子追加了输入端子140、输出端子141。若着眼于各相的桥式电路配置，则配置于半导体模块100b的右侧的U相与配置于左侧的W相为相同配置，中央的V相则相反呈线对称(镜像)配置。由此，中央的V相为线对称配置，电源端子142由两相(V相、W相)共用，接地端子143由另外的两相(U相、V相)共用，从而削减端子数。
另外，此处，例举了三相的桥式电路为例，但在具有两相以上的多个相的桥式电路中，至少一相相对于相邻的其它相的配置也呈线对称配置，以由呈线对称关系的两相共用端子的方式配置电源端子、接地端子，从而能削减端子数。
若详细考虑各相的电流控制，则流过功率端子的电流可获得由端子的形状、半导体芯片的规格等所决定的最大电流值。对于该最大电流的端子的大小由宽度和厚度来规定。三相电动机中一般使用平衡三相，电源端子142与接地端子143不会同时流过两相的最大电流，因此即使将两相的端子集中于一个也不会超过规定的最大电流量，即使设为与各相独立时的电源端子或接地端子大致相同的宽度、厚度，也不会产生问题。即、即使共用两相的端子，也能使用与各相独立时的电源端子或接地端子大致相同的宽度、厚度，能削减端子数，因此能使半导体模块100b整体小型化。
此外，U相的电源输入端子延伸到电源继电器7的输出端子141的邻近左侧，因此在半导体模块100b的内部，能利用跳线106c连接电源继电器7与U相的桥式电路。
对于控制端子列，U相的各控制端子120～124与实施方式1为相同排列。电源继电器部的控制端子125、126、127、128分别是电源输入的监视用端子、电源继电器7内的两个FET的栅极指令端子、电源继电器7内的两个FET的中间连接点的监视器用端子、电源输出的监视器用端子。
接着，对形成于半导体模块100b的狭缝132进行说明。V相为线对称配置、两个分流电阻配置于基板104f的一部分即焊盘11f(图6中以虚线包围的部分)，从而能形成以一个切口起到两个狭缝的作用的狭缝132。此外，与实施方式1同样地，焊盘11e、11g(图6中以虚线包围的部分)分别形成有狭缝130，从而将控制端子123、129b与主电路切分开来。
由此，与实施方式1同样地，通过对主电流流入控制端子123侧、124侧、129a侧、129b侧的情况进行限制，从而能防止在控制端子123、124、129a、129b分别检测分流电阻103U、103V的两端的电位时，也检测发生于焊盘11e、11f、11g的电压降，能分别高精度地测定分流电阻103U、103V两端的电位差，能提高电流检测精度。
并且，控制端子123及124从分流电阻103U两端的电极延伸出，控制端子129a及129b从分流电阻103V两端的电极延伸出，从而利用控制端子123、124、129a、129b分别检测分流电阻103U、103V两端的电位差。由此，能防止检测出其它相的分流电阻的电位，能确保电流检测精度。
实施方式3.
对实施方式3所涉及的半导体模块100c进行说明。图7(a)是三相逆变器中的一相(U相)的桥式电路，图7(b)是将该电路半导体模块化后的情况下的内部透视图。图7(b)的以单点划线包围的部分是包围半导体模块100c的模塑树脂体，功率端子及控制端子延伸到模塑树脂体外部。
如图7(a)所示，桥式电路除了高电位侧开关元件101U、低电位侧开关元件102U、分流电阻103U以外，在向电动机2的输出线上***半导体开关元件104U，能对向电动机2的电流进行导通断开控制。半导体开关元件104U也是FET。此外，电源、接地之间设有高频噪声抑制用电容器105U。并且，也设有用于监视各部分的电压的端子(圆圈)。若像这样将一相的桥式电路半导体模块化，则成为例如图7(b)那样的配置、连接。
功率端子由电源端子301、接地端子302、电动机输出端子303构成。控制端子列由检测电动机输出的电位的监视用的控制端子320、进行高电位侧开关元件101U的栅极指令的控制端子321、进行低电位侧开关元件102U的栅极指令的控制端子322、检测分流电阻103U两端的电位的控制端子323及324、进行半导体开关元件104U的栅极指令的控制端子325、高电位侧开关元件101U、低电位侧开关元件102U与半导体开关元件104U这三个交叉部的监视用的控制端子326构成。
接着，对狭缝133进行说明。将焊盘形成为宽幅的主要目的在于，为了如技术问题所阐述的那样有效地将基板的热量传导至散热器从而进行冷却，因此增大表面积，除此以外，也可以例举出为了有效地使电流流动而增大截面积等。
然而，如实施方式1那样，若直线状的狭缝130与L字形的狭缝131延伸至焊盘11c、11d的中途，则形成于焊盘11c、11d的主电路的截面积与焊盘11c、11d的散热面积变小，基板104c、104d的散热性和电流传输效率降低(参照图5)。
因此，如图7(b)所示，使控制端子323及324从放置、连接有分流电阻103U的电极的焊盘11h、11i(图7(b)中由虚线包围的部分)中的最接近放置分流电阻103U的电极的部位的角部起，沿分流电阻103U的电极宽度方向延伸而出。并且，以使狭缝133的前端部延伸至分流电阻103U的电极附近、并沿着分流电阻103U的电极宽幅方向的方式形成狭缝133，从而确保焊盘11h、11i的散热面积与主电路的截面积，并且将焊盘11h、11i切分为主电流与控制端子323、324。由此，与实施方式1同样地，通过限制主电流流入控制端子323侧及324侧，从而能防止在控制端子323、324检测分流电阻103U两端的电位时也检测出焊盘11h、11i所产生的电压降，能高精度地测定分流电阻103U两端的电位差，提高电流检测精度。
除此以外，通过确保焊盘11h、11i的散热面积与主电路的截面积，从而能确保基板104h、104i的散热性与电流传输效率。
关于本发明所涉及的狭缝，通过将狭缝的前端部延长至分流电阻的电极附近，从而将焊盘切分为主电流流动的主电路与检测用端子，若能抑制流入上述检测用端子侧的焊盘的电流，则形状、粗细、长度能任意地设定。
关于基板的原材料，实施方式1～3中使用了以铜或铜合金形成的基板，但也可以使用由其它的导电性材料形成的基板。
关于分流电阻，实施方式1～3中，对低电位侧开关元件的下游连接有分流电阻的示例进行了阐述，但分流电阻也可以连接于低电位侧开关元件的下游以外，如分流电阻可连接于高位侧开关元件的上游等。
关于半导体模块所使用的半导体开关元件，此处对使用了MOFFET的示例进行了阐述，但并不限于此，使用了IGBT、晶闸管的半导体模块也能适用本发明。并且，搭载于半导体模块的开关元件的个数也可以是一个。
并且，此前对将本发明申请所涉及的半导体模块搭载于电动助力转向装置的示例进行了阐述，但也可搭载于其它的装置。
本发明在发明的范围内可以对各实施方式进行组合，也能对各实施方式适当地进行变形、省略。
标号说明
100a、100b、100c 半导体模块
10a、10b、11a、11b、11c、11d、11e、11f、11g、11h 焊盘
41、104a、104b、104c、104d、104e、104f、104h、104i 基板
33U、103U、103V 分流电阻
101U 高电位侧开关元件
102U 低电位侧开关元件
110、142 电源端子
111、303 电动机输出端子
112、143、302 接地端子
123、124、129a、129b、323、324、415、417 检测用端子
130、131、132、133 狭缝

Claims (4)

1.一种半导体模块，包括：
多个基板，该多个基板以导电性材料形成为板状；
功率端子，该功率端子从所述基板延伸出；
焊盘，该焊盘为多个所述基板的一部分，用于放置、连接元件；
开关元件，该开关元件放置、连接于所述焊盘，控制流过所述功率端子的电流；以及
分流电阻，该分流电阻放置、连接于所述焊盘，所述半导体模块的特征在于，
在放置、连接有所述分流电阻的焊盘中形成有狭缝，所述狭缝切分为主电流流动的主电路与检测所述分流电阻的电极的电位的检测用端子，
所述狭缝的前端部延伸至所述分流电阻的电极附近，
所述半导体模块包括：
功率端子列，该功率端子列排列有所述功率端子；以及
控制端子列，该控制端子列排列于与所述功率端子列相对的边，由用于控制、检测的小功率端子构成，
将所述分流电阻配置于所述功率端子列侧。
2.如权利要求1所述的半导体模块，其特征在于，
在放置、连接有所述分流电阻的焊盘中，
所述检测用端子从所述焊盘中的最接近放置所述分流电阻的电极的部位的角部起，以沿着所述分流电阻的电极宽度方向的方式延伸而出，
所述狭缝以沿着所述电极宽度方向的方式形成。
3.如权利要求1或2所述的半导体模块，其特征在于，
将多个相的桥式电路集中进行树脂模塑，从而进行一体化，该桥式电路由高电位侧开关元件、低电位侧开关元件及所述分流电阻构成。
4.如权利要求3所述的半导体模块，其特征在于，
多个相中的至少一个相对于相邻的其它相的配置呈线对称配置，
并且由所述线对称配置的两相共用的共用端子的宽度及厚度与独立的一相的电源端子或接地端子的宽度及厚度大致相同。
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