JP2019213326A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP2019213326A JP2019213326A JP2018106638A JP2018106638A JP2019213326A JP 2019213326 A JP2019213326 A JP 2019213326A JP 2018106638 A JP2018106638 A JP 2018106638A JP 2018106638 A JP2018106638 A JP 2018106638A JP 2019213326 A JP2019213326 A JP 2019213326A
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- shunt resistor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000001514 detection method Methods 0.000 claims abstract description 37
- 239000004020 conductor Substances 0.000 claims description 3
- 238000005192 partition Methods 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 238000009499 grossing Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Abstract
Description
本発明の実施の形態1にかかる半導体モジュール100aを用いた装置について説明する。ここでは例として、半導体モジュール100aを電動パワーステアリング装置に搭載した場合について説明する。図3は、半導体モジュール100aを含む電動パワーステアリング装置全体の回路図であり、大きく分けて、制御ユニット1、ハンドル操舵をアシストするためのモータ2、回転角センサ4、電流センサ5、回転センサ4と電流センサ5以外のセンサ類6で構成され、制御ユニット1は、制御回路3、電源供給用の電源リレー7、平滑用コンデンサ8、半導体モジュール100aで構成される。モータ2は3相(U相、V相、W相)のブラシレスモータである。制御回路3は、CPU30、駆動回路31、入力回路32、電源回路33で構成される。回転角センサ4、電流センサ5、センサ類6は制御回路3と電気的に接続されている。なお、本発明では、電流センサ5としてシャント抵抗を用いている。電源9、グランド10間には平滑用コンデンサ8が複数個並列接続されている。
本発明の実施の形態2にかかる半導体モジュール100bについて説明する。図6は半導体モジュール100bの内部構成を示す。一点鎖線で囲まれた部分は半導体モジュール100bを包むモールド樹脂体であり、パワー端子及び制御端子はモールド樹脂体外部に延出している。回路構成としては実施の形態1にかかる半導体モジュール100aの回路構成に対して、図1の電源リレー7を加えたものである。この電源リレー7は半導体スイッチング素子と同様にFETで構成されており、半導体モジュール100bの右端に配置されている。右端から順に、電源リレー7、U相ブリッジ回路、V相ブリッジ回路、W相ブリッジ回路が配置されている。図中下側の辺にはパワー端子列、上側の辺には制御端子列がそれぞれ分離して配列されている。
次に実施の形態3にかかる半導体モジュール100cについて説明する。図7(a)は3相インバータのうちの1相分(U相)のブリッジ回路、図7(b)はその回路を半導体モジュール化した場合の内部透視図である。図7(b)の一点鎖線で囲まれた部分は半導体モジュール100cを包むモールド樹脂体であり、パワー端子及び制御端子はモールド樹脂体外部に延出している。
10a、10b、11a、11b、11c、11d、11e、11f、11g、11h ランド
41、104a、104b、104c、104d、104e、104f、104h、104i ベースプレート
33U、103U、103V シャント抵抗
101U 高電位側スイッチング素子
102U 低電位側スイッチング素子
110、142 電源端子
111、303 モータ出力端子
112、143、302 グランド端子
123、124、129a、129b、323、324、415、417 検出用端子
130、131、132、133 スリット
Claims (5)
- 導電性材料で板状に形成された複数のベースプレートと、
前記ベースプレートから延出されるパワー端子と、
複数の前記ベースプレートの一部であり、素子を載置、接続するためのランドと、
前記ランドに載置、接続され、前記パワー端子に流れる電流を制御するスイッチング素子と、
前記ランドに載置、接続されるシャント抵抗と、を備えた半導体モジュールにおいて、
前記シャント抵抗が載置、接続されたランドに、主電流が流れる主電路と前記シャント抵抗の電極の電位を検出する検出用端子とに切り分けるスリットを形成し、
前記スリットの先端部は、前記シャント抵抗の電極の近傍まで延出されること
を特徴とする半導体モジュール。 - 前記シャント抵抗が載置、接続されたランドにおいて、
前記検出用端子は、前記ランドのうち、前記シャント抵抗の電極が載置される場所に最も近い角部から、前記シャント抵抗の電極幅方向に沿うように延出され、
前記スリットは前記電極幅方向に沿うように形成される
ことを特徴とする請求項1に記載の半導体モジュール。 - 前記パワー端子が配列されるパワー端子列と、
前記パワー端子列と対向する辺に配列され、制御や検出に用いる小電力端子で構成される制御端子列と、を備え、
前記シャント抵抗を前記パワー端子列側に配置する
ことを特徴とする請求項1または請求項2に記載の半導体モジュール。 - 高電位側スイッチング素子と、
低電位側スイッチング素子と、
前記シャント抵抗と、で構成されるブリッジ回路を複数相分まとめて樹脂モールドし、一体化した
ことを特徴とする請求項1〜3のいずれか1項に記載の半導体モジュール。 - 複数相のうち、少なくとも1相は、隣接する他の相の配置に対して線対称配置するとともに、
前記線対称配置した2相で共用する共用端子の幅及び厚みは、独立した1相の電源端子またはグランド端子の幅及び厚みと略同一である
ことを特徴とする請求項4に記載の半導体モジュール。
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