CN110528042A - A kind of semiconductor devices electro-plating method and the activated bath for plating - Google Patents
A kind of semiconductor devices electro-plating method and the activated bath for plating Download PDFInfo
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- CN110528042A CN110528042A CN201910802764.5A CN201910802764A CN110528042A CN 110528042 A CN110528042 A CN 110528042A CN 201910802764 A CN201910802764 A CN 201910802764A CN 110528042 A CN110528042 A CN 110528042A
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- semiconductor devices
- based material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G3/00—Apparatus for cleaning or pickling metallic material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
- C25D5/38—Pretreatment of metallic surfaces to be electroplated of refractory metals or nickel
- C25D5/40—Nickel; Chromium
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
Abstract
The invention discloses a kind of semiconductor devices electro-plating methods, include the following steps: activation step: will be sent in activated bath and be activated by pretreated Ni-based material semiconductor devices, conductor is provided in activated bath；Conductor is electrically connected with the cathode of DC power supply, and Ni-based material semiconductor devices is electrically connected with the anode of DC power supply；When being activated to Ni-based material semiconductor devices, voltage value added by DC power supply is controlled between 0.3V~0.5V；Plating step: the Ni-based material semiconductor devices by being activated is electroplated.The invention also discloses the activated baths for plating.Semiconductor devices electro-plating method of the invention, the copper ion in activating solution is promoted to be transferred on conductor by the potential difference between conductor and Ni-based material metal device, it avoids the copper ion of activating solution to Ni-based material frame aggregate and displacement reaction occurs therewith, the generation of decortication and bubble and other issues is reduced, electroplating effect is promoted.
Description
Technical field
The present invention relates to a kind of technical field of semiconductor encapsulation more particularly to a kind of semiconductor devices electro-plating method and it is used for
The activated bath of plating.
Background technique
In traditional plating activation technique, Copper base material product is placed in activating solution, is easily corroded and is converted into copper ion
It is free in activating solution, and that there is also copper products in Ni-based material frame is exposed outside, during being activated,
Copper base material can also be corroded and be converted into copper ion and be free in activating solution, at this time if carried out at the activation of nickel substrate product
Reason, since nickel simple substance activity is stronger than copper simple substance metal active, nickel simple substance occurs displacement with the copper ion in solution and reacts, nickel simple substance
It loses electronics and becomes nickel ion and be free in activating solution, copper ion obtains electronics and becomes the table that copper simple substance is attached to nickel substrate product
Face, as shown in figure 17, Ni-based material frame 6 are installed at fixture 7, and copper simple substance is attached to Ni-based 6 surface of material frame, due to formation
Copper simple substance is not to be uniformly adhered to the surface of Ni-based material, and its adhesive force is very weak.So can be electroplated to Ni-based material
When tin, the tin on copper simple substance surface is electroplated, is easy because of the weak adhesive force between copper simple substance and Ni-based material, cause Ni-based material with
Binding force is weak between tin plating, and then be easy to cause decortication.Since there are copper particles between tin coating and nickel layer, and in copper particle
Surrounding forms enclosure space, toasts after being electroplated and completing to nickel substrate product, enclosure space expanded by heating is to generate
Local bubble, and then product electroplating quality is had an impact.
Summary of the invention
For overcome the deficiencies in the prior art, one of the objects of the present invention is to provide a kind of semiconductor devices plating sides
Method is able to achieve in the activation process to Ni-based material semiconductor devices, prevents copper ion formation copper simple substance in activating solution attached
In Ni-based material semiconductor device surface, improve subsequent plating reliability.
The second object of the present invention is to provide a kind of activated bath for plating, be able to achieve to Ni-based material semiconductor device
The activation processing of part, and copper ion formation copper simple substance in activating solution is prevented to be attached to Ni-based material semiconductor device surface, after raising
Continuous plating reliability.
An object of the present invention adopts the following technical scheme that realization:
A kind of semiconductor devices electro-plating method, includes the following steps:
Pre-treatment step: Ni-based material semiconductor devices is pre-processed；
Activation step: will be sent in activated bath by pretreated Ni-based material semiconductor devices and be activated, institute
It states and is provided with activating solution and conductor in activated bath；The conductor is electrically connected with the cathode of DC power supply, the Ni-based material semiconductor
Device is electrically connected with the anode of DC power supply；Voltage value added by DC power supply is controlled between 0.3V~0.5V；
Plating step: the Ni-based material semiconductor devices by being activated is electroplated.
Further, the activating solution uses microetch liquid medicine.
Further, the pretreatment includes carrying out metal molding excessive glue sofening treatment, height to Ni-based material semiconductor devices
Press water removal metal molding excessive glue, burr processing and metal degreasing processing.
Further, between activation step and plating step further include: to the Ni-based material semiconductor devices after activation into
Row deionized water rinses processing and pre-preg.
Further, when being activated, the temperature of the activating solution is between 10 degrees Celsius to 45 degrees Celsius.
The second object of the present invention adopts the following technical scheme that realization:
A kind of activated bath for plating, including activation slot shell, the activation slot shell is interior to be arranged conductor, the conductor
The position of setting meets when being contained with activating solution in activation slot shell, in at least a part of immersion activating solution of conductor；
The conductor is electrically connected with the cathode of DC power supply, and the activated bath is additionally provided with the semiconductor device for mounting semiconductor
Part installation position, the semiconductor devices installation position meet when semiconductor devices is located at semiconductor devices installation position and the activated bath
When being contained with activating solution in shell, the semiconductor devices can be immersed in activating solution；The DC power supply anode with partly lead
The electrical connection of body device installation position, the DC power supply provide the voltage value of 0.3V~0.5V.
Further, the semiconductor devices is Copper base material semiconductor devices or Ni-based material semiconductor devices.
Further, activating solution is also contained in the activation slot shell.
Further, the activating solution is microetch liquid medicine.
Compared with prior art, the beneficial effects of the present invention are:
Semiconductor devices electro-plating method of the invention, in Ni-based material semiconductor devices activation step, to positioned at activating solution
In conductor apply negative electricity, while positive electricity, conductor and Ni-based material half are applied to the Ni-based material semiconductor devices being located in activating solution
Potential difference between conductor device will promote the copper ion in activating solution to be transferred on conductor, and elemental copper is formed on conductor,
To reduce copper ion a possibility that being converted into elemental copper on Ni-based material semiconductor devices, reduces Ni-based material semiconductor devices and exist
Bubble and decortication and other issues are generated after plating, promote plating reliability.
Detailed description of the invention
Fig. 1 is the flow chart of the semiconductor devices electro-plating method of the present embodiment；
Fig. 2 is the first effect picture after being activated under first condition in the present embodiment；
Fig. 3 is the second effect picture after being activated under first condition in the present embodiment；
Fig. 4 is that effect picture after electroplating processes is under first condition in the present embodiment
Fig. 5 is the first effect picture after being activated under second condition in the present embodiment；
Fig. 6 is the second effect picture after being activated under second condition in the present embodiment；
Fig. 7 is that the first effect picture after electroplating processes is under second condition in the present embodiment；
Fig. 8 is that the second effect picture after electroplating processes is under second condition in the present embodiment；
Fig. 9 is effect picture after being activated under third condition in the present embodiment；
Figure 10 is that the first effect picture after electroplating processes is under third condition in the present embodiment；
Figure 11 is that the second effect picture after electroplating processes is under third condition in the present embodiment；
Figure 12 is effect picture after being activated under fourth condition in the present embodiment；
Figure 13 is that the first effect picture after electroplating processes is under fourth condition in the present embodiment；
Figure 14 is that the second effect picture after electroplating processes is under fourth condition in the present embodiment；
Figure 15 is effect picture after being activated under fifth condition in the present embodiment；
Figure 16 is effect picture after being activated under Article 6 part in the present embodiment；
Figure 17 is that copper ion flows to schematic diagram when activated ni in activated bath in the prior art；
Figure 18 is that copper ion flows to schematic diagram when activated ni in activated bath in the present embodiment.
Appended drawing reference: 1, slot shell is activated；2, semiconductor devices；3, conductor；4, DC power supply；5, installation position；6, Ni-based
Material frame；7, fixture.
Specific embodiment
In the following, being described further in conjunction with attached drawing and specific embodiment to the present invention, it should be noted that not
Under the premise of conflicting, new implementation can be formed between various embodiments described below or between each technical characteristic in any combination
Example.
As shown in Figure 1, present embodiments providing a kind of semiconductor devices electro-plating method, include the following steps:
S1 pre-treatment step: Ni-based material semiconductor devices is pre-processed；Pretreatment is the basis step in electroplating technology
Suddenly, primarily to handling semiconductor device surface, electro-plating method provided by the invention mainly partly leads Ni-based material
The plating of body device, the pretreatment include that the processing of metal excessive glue, high pressure water removal metal are carried out to Ni-based material semiconductor devices
Excessive glue and burr processing, metal degreasing processing.Ni-based material semiconductor devices is Ni-based material frame in the present embodiment.
S2 activation step: will be sent in activated bath by pretreated Ni-based material semiconductor devices and be activated,
Conductor is provided in the activated bath；The conductor is electrically connected with the cathode of DC power supply so that conductor exists as cathode setting
In activating solution, conductor is made of corrosion resistant conductive material, such as Stainless steel 316；And the shape of conductor can be plate or net
Shape or rodlike equal variforms；The Ni-based material semiconductor devices is electrically connected with the anode of DC power supply；Added by DC power supply
Voltage value is 0.3V~0.5V.It is contained with activating solution in the activated bath, in a kind of preferred embodiment, what activating solution used
It is microetch liquid medicine.Activation step is mainly used for removing the oxide that metal surface is formed, and is convenient for subsequent reliable plating.
In the present embodiment microetch liquid medicine be can be with the acid deoxidation agent of directly etching metal and its oxide, can be with
Micron order corrosion is carried out to certain specific ground.Such as the name of product of market supply be ACTRONAL 988 open cylinder salt or
The microetch liquid medicine of DESCABASE CU 100.Wherein, ACTRONAL 988 open the ingredient of cylinder salt include sodium sulphate, sodium bisulfate and
Sodium fluoride.
DC power supply mentioned in the present embodiment can be conventional DC power supply, such as dry cell；It is also possible to lead to
Cross the DC power supply that AC power source is converted to, such as the DC power supply that alternating current is formed by AC-DC converter part.Preferably, living
After change processing further include: carry out deionized water to the Ni-based material frame after activation and rinse processing and pre-preg.
S3 plating step: the Ni-based material semiconductor devices by being activated is electroplated.
Although this method primarily directed to Ni-based material semiconductor devices plating provide electro-plating method, Copper base material frame and
Ni-based material frame can be activated in the same activated bath of same plating machine, i.e., when having handled Copper base material frame
When, directly Ni-based material frame can be put into the activated bath and be activated；It does not need to live to Copper base material frame
After change processing, the activation that the activating solution in activated bath carries out Ni-based material frame again later is replaced.
Specifically, it is connected to the anode of DC power supply using Ni-based material frame as anode, uses a metal plate as conductor
It is connected to the cathode of DC power supply, add preferably 0.3V between metal plate and Ni-based material frame but is not limited to the electricity of 0.3V
Pressure, so that Ni-based material frame is positively charged, metal plate and belt negative electricity, the potential difference between conductor and Ni-based material semiconductor devices will
Promote the copper ion in activating solution to be transferred on conductor, and form elemental copper on conductor, to reduce copper ion in Ni-based material
A possibility that elemental copper is converted on semiconductor devices reduces Ni-based material semiconductor devices and generates bubble and decortication after plating
And other issues, promote plating reliability
In the present embodiment, when reduction reaction occurs for microetch liquid medicine and copper, nickel, reaction principle and corresponding voltage are as follows:
| Reduction reaction | At 25 DEG C, under conditions of 1mol, copper metal standard restoration voltage |
| Cu2++2e-≤=> Cu | +0.337V |
On represent in potential situation nominally, but when temperature increase or copper ion concentration increase feelings
Certain variation can also occur for required potential difference under condition.When voltage is more than 0.5V, it may occur that following reaction: Ni+2H+==>
Ni2++H2.When such reaction occurs, so that Ni-based material loses electronics and becomes nickel ion and enter in activating solution.So at this
The range of highly preferred voltage is 0.3V -0.5V in embodiment.
As shown in figure 18, a kind of activated bath for plating, including slot shell 1 is activated, it can be contained in the activation slot shell 1
Put activating solution, in a kind of preferred embodiment, activating solution uses microetch liquid medicine, and activates slot shell installing conductor 3, the work
Change the installation position 5 being additionally provided in slot for installing Copper base material semiconductor devices and/or Ni-based material semiconductor devices, the installation
The position of 5 setting of position meets when semiconductor devices is installed on installation position 5, and the semiconductor devices 2 is immersed in microetch liquid medicine；
It further include DC power supply 4, the anode of the DC power supply 4 is electrically connected with installation position 5, the cathode and conductor 3 of the DC power supply 4
Electrical connection.
In the present embodiment, specifically, Ni-based material frame is installed on the installation position 5 in plating machine, DC power supply is just
Pole is connected by installation position 5 with the Ni-based material frame.When carrying out the activation of Ni-based material, the automatic making alive of galvanizing process,
Make the copper ion in solution obtain electron reduction to be attached on conductor at copper simple substance, to avoid the copper ion of activating solution to Ni-based
Simultaneously displacement reaction occurs therewith for material frame aggregate.
When being activated to Copper base material frame, DC power supply is cut off, is not powered to conductor and Copper base material frame；
Since the copper ion in the copper simple substance and activating solution of Copper base material frame is chemical element of the same race, displacement reaction will not occur.
But it is then different for Ni-based material frame, since the metal active of nickel is stronger than the metal active of copper, when Ni-based material frame into
When entering into activating solution, since there are copper ions in activating solution, displacement reaction can occur for the two at this time, can copper ion be become
It is attached to Ni-based material frame surface at copper simple substance, and then influences the reliability of subsequent plating.The present invention passes through in activated bath
Metal plate is added as conductor to form a potential difference between Ni-based material frame and conductor, so that the copper ion in activating solution turns
It moves at conductor, avoids reacting with nickel.In this way, the activation processing of Copper base material semiconductor devices and Ni-based material half
The activation processing of conductor device can carry out in the same activated bath of same plating machine, to greatly improve the spirit of production
Activity.
It is directed to Ni-based material frame, six kinds of different conditions are set in the present embodiment to be activated；When in the
When under the conditions of one, visual examination is carried out to Ni-based material frame；The first condition is 0 volt/0 ampere, i.e., product anode is without electricity
Pressure, conductor do not have an electric current, and Ni-based material frame stops 3 minutes in activated bath, copper ion concentration is 3.2 grams per liters in activated bath；Such as
Shown in Fig. 2 and Fig. 3, through activation processing after, find have part a small amount of copper ion be reduced into copper simple substance be attached to it is Ni-based
Material frame and transmission steel strip surface；As shown in figure 4, after electrotinning to its product carry out visual examination, there is no bubble,
The defects of decortication, but transmit steel strip surface and bubble and decortication phenomenon has occurred.
When under second condition, visual examination is carried out to Ni-based material frame；The second condition is 0 volt/0 ampere,
I.e. anode does not provide electric current without providing voltage, conductor, and Ni-based material frame stops 5 minutes, activation buried copper in activated bath
Ion concentration is 15 grams per liters；As shown in Figure 5 and Figure 6, after activation processing, it is found that it is attached many copper ions are reduced into copper simple substance
Ni-based material frame and transmission steel strip surface；Since copper ion concentration increases in its microetch liquid medicine, so displacement occurs instead in it
The speed answered is also relatively faster；As shown in Figure 7 and Figure 8, appearance inspection is carried out to its product after to Ni-based material frame electrotinning
It looks into, finds bubble, defect of peeling, while transmitting steel strip surface and bubble and decortication phenomenon equally has occurred.
When under third condition, visual examination is carried out to Ni-based material frame；The third condition is 0.3 volt/1 peace
Training, 0.3 volt/1 ampere of the third condition, be that anode offer 0.3V voltage keeps Ni-based material frame positively charged, conductor provides 1A
Electric current has formed it into electronics, Ni-based material frame stops 3 minutes in activated bath, in activated bath copper ion concentration be 3.2 grams/
It rises；As shown in figure 9, not finding that copper ion is reduced into copper simple substance and is attached at Ni-based material frame after activation processing；Such as figure
Shown in 10 and Figure 11, visual examination is carried out to its product after Ni-based material frame electrotinning, does not find that bubble and decortication lack
Fall into, and transmit steel strip surface also there is no peel phenomenon.
When under fourth condition, visual examination is carried out to Ni-based material frame；The fourth condition is 0.3 volt/1 peace
Training, 0.3 volt/1 ampere of the fourth condition are that anode offer 0.3V voltage keeps Ni-based material frame positively charged, and conductor provides 1A
Electric current has formed it into electronics, and Ni-based material frame stops 5 minutes in activated bath, copper ion concentration is 15 grams per liters in activated bath；
As shown in figure 12, after activation processing, finding, which has a small amount of copper ion to be reduced into copper simple substance, is attached at Ni-based material frame；Such as
Shown in Figure 13 and Figure 14, visual examination is carried out to frame after electrotinning, does not find bubble and decortication defect, and transmit
Also there is no phenomenons of peeling for steel strip surface.
When under fifth condition, visual examination is carried out to Ni-based material frame；The fifth condition is 0.5 volt/3 peaces
Training, 0.5 volt/3 amperes of the fifth condition are that anode offer 0.5V voltage keeps Ni-based material frame positively charged, and conductor provides 3A
Electric current has formed it into electronics, Ni-based material frame stops 3 minutes in activated bath, in activated bath copper ion concentration be 3.2 grams/
It rises；As shown in figure 15, after activation processing, do not find that copper ion is reduced into copper simple substance and is attached at Ni-based material frame；In
Visual examination is carried out to its product after Ni-based material frame electrotinning, does not find bubble, and transmit steel strip surface also not having
Decortication phenomenon, final effect view such as Figure 13 and Figure 14 occurs.
When under Article 6 part, visual examination is carried out to Ni-based material frame；The Article 6 part is 0.5 volt/3 peaces
Training, 0.5 volt/3 amperes of the Article 6 part are that anode offer 0.5V voltage keeps Ni-based material frame positively charged, and conductor provides 3A
Electric current forms it into electronics, and Ni-based material frame stops 5 minutes in activated bath, copper ion concentration is 15 grams per liters in activated bath；Such as
Shown in Figure 16, after activation processing, a small amount of copper ion is reduced into copper simple substance and is attached at Ni-based material frame, but nickel
Substrate frame surface is by 3 Ampere currents excessive corrosion removing such as Figure 16；Visual examination is carried out to its product after electrotinning,
Do not find bubble and decortication defect, and transmit steel strip surface also there is no peel phenomenon, final effect view such as Figure 13
And Figure 14.
By it is above-mentioned carried out under the conditions of each experiment could be aware that: if not in microetch liquid medicine be arranged voltage make copper
Ion restores elemental copper at conductor, then copper ion can be reduced into activating solution copper simple substance be attached at Ni-based material frame and
Steel strip surface is transmitted, the generation of bubble and defect phenomenon of peeling is had on electroplated layer.
When activated bath setting 0.3-0.5 lies prostrate voltage and 1-3 Ampere currents parameter, effectively copper ion can be inhibited to restore
It is attached at Ni-based material frame at copper simple substance and machine transmits steel strip surface.But works as and using 3 Ampere currents and 0.5V voltage
When, it is apparent that nickel layer surface finds slight corrosion removing, but is normally to connect to its frame quality results itself
By causing the serious corrosion removing of nickel substrate surface if adding bigger electric current.Therefore, in the present embodiment, direct current
Power supply institute making alive is between 0.3V~0.5V, more preferably 0.337V.
Semiconductor devices is after carrying out more sufficient activation processing, by being activated so that Ni-based material frame surface
Oxide is thoroughly removed, and makes firmly to be combined between its metal layer and tin layers, to obtain preferable electroplating effect.
The electroplating technology provided using the prior art the plating of Ni-based material semiconductor devices herein, method provided by the invention do not have it
It improves, it will not be described here.
The above embodiment is only the preferred embodiment of the present invention, and the scope of protection of the present invention is not limited thereto,
The variation and replacement for any unsubstantiality that those skilled in the art is done on the basis of the present invention belong to institute of the present invention
Claimed range.
Claims (9)
1. a kind of semiconductor devices electro-plating method, which comprises the steps of:
Pre-treatment step: Ni-based material semiconductor devices is pre-processed；
Activation step: will be sent in activated bath by pretreated Ni-based material semiconductor devices and be activated, the work
Change in slot and is provided with activating solution and conductor；The conductor is electrically connected with the cathode of DC power supply, the Ni-based material semiconductor devices
It is electrically connected with the anode of DC power supply；Voltage value added by DC power supply is controlled between 0.3V~0.5V；
Plating step: the Ni-based material semiconductor devices by being activated is electroplated.
2. a kind of semiconductor devices electro-plating method as described in claim 1, which is characterized in that the activating solution uses microetch medicine
Water.
3. a kind of semiconductor devices electro-plating method as claimed in claim 1 or 2, which is characterized in that the pretreatment includes pair
Ni-based material semiconductor devices carries out metal molding excessive glue sofening treatment, high pressure water removal metal molding excessive glue, burr processing and gold
Belong to oil removal treatment.
4. a kind of semiconductor devices electro-plating method as claimed in claim 1 or 2, which is characterized in that in activation step and plating
Between step further include: carry out deionized water to the Ni-based material semiconductor devices after activation and rinse processing and pre-preg.
5. a kind of semiconductor devices electro-plating method as claimed in claim 1 or 2, which is characterized in that when being activated,
The temperature of the activating solution is between 10 degrees Celsius to 45 degrees Celsius.
6. a kind of activated bath for plating, including activation slot shell, which is characterized in that setting is led in the activation slot shell
Body, the position of the conductor setting meet at least a part of leaching of conductor when being contained with activating solution in activation slot shell
Enter in activating solution；The conductor is electrically connected with the cathode of DC power supply, and the activated bath is additionally provided with for installing semiconductor device
The semiconductor devices installation position of part, the semiconductor devices installation position meet when semiconductor devices is located at semiconductor devices installation position
And when being contained with activating solution in the activation slot shell, the semiconductor devices can be immersed in activating solution；The DC power supply
Anode be electrically connected with semiconductor devices installation position, the voltage value of DC power supply offer 0.3V~0.5V.
7. a kind of activated bath for plating as claimed in claim 6, which is characterized in that the semiconductor devices is Copper base material
Semiconductor devices or Ni-based material semiconductor devices.
8. a kind of activated bath for plating as claimed in claim 6, which is characterized in that also held in the activation slot shell
There is activating solution.
9. a kind of activated bath for plating as claimed in claim 8, which is characterized in that the activating solution is microetch liquid medicine.
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| CN117438322A (en) * | 2023-12-19 | 2024-01-23 | 华羿微电子股份有限公司 | Method and jig for preventing DBC part from changing color after power module electroplating |
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