CN110503998B - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN110503998B CN110503998B CN201810907020.5A CN201810907020A CN110503998B CN 110503998 B CN110503998 B CN 110503998B CN 201810907020 A CN201810907020 A CN 201810907020A CN 110503998 B CN110503998 B CN 110503998B
- Authority
- CN
- China
- Prior art keywords
- voltage
- current
- charging
- imax
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/08—Control thereof
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1045—Read-write mode select circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5622—Concurrent multilevel programming of more than one cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5631—Concurrent multilevel reading of more than one cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018094551A JP2019200828A (ja) | 2018-05-16 | 2018-05-16 | 半導体記憶装置 |
JP2018-094551 | 2018-05-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110503998A CN110503998A (zh) | 2019-11-26 |
CN110503998B true CN110503998B (zh) | 2023-07-28 |
Family
ID=68533912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810907020.5A Active CN110503998B (zh) | 2018-05-16 | 2018-08-10 | 半导体存储装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10553283B2 (zh) |
JP (1) | JP2019200828A (zh) |
CN (1) | CN110503998B (zh) |
TW (1) | TWI696181B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020027674A (ja) | 2018-08-10 | 2020-02-20 | キオクシア株式会社 | 半導体メモリ |
US11056195B1 (en) | 2020-04-27 | 2021-07-06 | Macronix International Co., Ltd. | Nonvolatile memory device and related driving method |
TWI773986B (zh) * | 2020-04-27 | 2022-08-11 | 旺宏電子股份有限公司 | 非揮發性記憶體裝置與相關的驅動方法 |
JP2022017054A (ja) | 2020-07-13 | 2022-01-25 | キオクシア株式会社 | 半導体記憶装置 |
JP7500365B2 (ja) * | 2020-09-14 | 2024-06-17 | キオクシア株式会社 | メモリシステム |
US11901036B2 (en) * | 2022-03-10 | 2024-02-13 | Micron Technology, Inc. | Apparatuses and methods of power supply control for sense amplifiers |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011181157A (ja) * | 2010-03-03 | 2011-09-15 | Toshiba Corp | 不揮発性半導体記憶装置 |
CN105989880A (zh) * | 2014-09-12 | 2016-10-05 | 株式会社东芝 | 半导体存储装置 |
CN107785049A (zh) * | 2016-08-29 | 2018-03-09 | 东芝存储器株式会社 | 半导体存储装置及存储器*** |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7324393B2 (en) * | 2002-09-24 | 2008-01-29 | Sandisk Corporation | Method for compensated sensing in non-volatile memory |
US7764547B2 (en) * | 2007-12-20 | 2010-07-27 | Sandisk Corporation | Regulation of source potential to combat cell source IR drop |
JP2011065708A (ja) | 2009-09-16 | 2011-03-31 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2012058860A (ja) | 2010-09-06 | 2012-03-22 | Toshiba Corp | メモリシステム |
US8645723B2 (en) * | 2011-05-11 | 2014-02-04 | Apple Inc. | Asynchronous management of access requests to control power consumption |
JP5655173B2 (ja) * | 2012-03-29 | 2015-01-14 | パナソニックIpマネジメント株式会社 | クロスポイント型不揮発性記憶装置とその駆動方法 |
FR3012673B1 (fr) * | 2013-10-31 | 2017-04-14 | St Microelectronics Rousset | Memoire programmable par injection de porteurs chauds et procede de programmation d'une telle memoire |
US9356074B1 (en) * | 2014-11-17 | 2016-05-31 | Sandisk Technologies Inc. | Memory array having divided apart bit lines and partially divided bit line selector switches |
US9536617B2 (en) | 2015-04-03 | 2017-01-03 | Sandisk Technologies Llc | Ad hoc digital multi-die polling for peak ICC management |
WO2017046850A1 (ja) | 2015-09-14 | 2017-03-23 | 株式会社 東芝 | 半導体メモリデバイス |
-
2018
- 2018-05-16 JP JP2018094551A patent/JP2019200828A/ja active Pending
- 2018-07-24 TW TW107125458A patent/TWI696181B/zh active
- 2018-08-10 CN CN201810907020.5A patent/CN110503998B/zh active Active
- 2018-08-29 US US16/116,727 patent/US10553283B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011181157A (ja) * | 2010-03-03 | 2011-09-15 | Toshiba Corp | 不揮発性半導体記憶装置 |
CN105989880A (zh) * | 2014-09-12 | 2016-10-05 | 株式会社东芝 | 半导体存储装置 |
CN107785049A (zh) * | 2016-08-29 | 2018-03-09 | 东芝存储器株式会社 | 半导体存储装置及存储器*** |
Also Published As
Publication number | Publication date |
---|---|
TWI696181B (zh) | 2020-06-11 |
US10553283B2 (en) | 2020-02-04 |
JP2019200828A (ja) | 2019-11-21 |
TW201947597A (zh) | 2019-12-16 |
US20190355421A1 (en) | 2019-11-21 |
CN110503998A (zh) | 2019-11-26 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Japanese businessman Panjaya Co.,Ltd. Address after: Tokyo, Japan Applicant after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Applicant before: TOSHIBA MEMORY Corp. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20211229 Address after: Tokyo, Japan Applicant after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Applicant before: TOSHIBA MEMORY Corp. |
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GR01 | Patent grant | ||
GR01 | Patent grant |