CN110476235B - 半导体装置、电力变换装置 - Google Patents

半导体装置、电力变换装置 Download PDF

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Publication number
CN110476235B
CN110476235B CN201780088769.5A CN201780088769A CN110476235B CN 110476235 B CN110476235 B CN 110476235B CN 201780088769 A CN201780088769 A CN 201780088769A CN 110476235 B CN110476235 B CN 110476235B
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semiconductor device
metal film
film
oxidation preventing
solder
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CN110476235A (zh
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木本信义
爱甲光德
白泽敬昭
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

目的在于提供能够抑制工时的增加，且缓和在半导体元件的电极处的引线框的接合部的周缘部产生的应力的技术。半导体装置(30)具备：半导体元件(3)，其搭载于散热器(1)之上；引线框(6)，其经由作为接合材料的焊料(2b)而与半导体元件(3)的发射极电极(3a)接合；金属膜(4)，其形成于发射极电极(3a)的表面；以及防氧化膜(5)，其形成于金属膜(4)的表面。金属膜(4)的周缘部在整周均从防氧化膜(5)露出。

Description

半导体装置、电力变换装置
技术领域
本发明涉及例如在电力控制用半导体装置搭载的半导体元件的向引线框的接合构造。
背景技术
在半导体装置中存在以下问题，即，由于热应力的反复，应力集中于在半导体装置搭载的半导体元件的发射极电极处的引线框的接合部的周缘部，发射极电极受到损伤。当前，为了缓和在接合部的周缘部产生的应力，以覆盖该接合部的方式而形成了包覆膜。
另外，在专利文献1中，公开了薄膜电路基板，该薄膜电路基板具有：氧化性高的第1金属皮膜，其形成于基板之上；耐氧化性高的第2金属皮膜，其在第1金属皮膜之上选择性地形成；以及氧化皮膜，其是通过第1金属皮膜的露出部分被氧化而生成的。
专利文献1：日本特开平7-30242号公报
发明内容
但是，为了以覆盖发射极电极处的引线框的接合部的方式而形成包覆膜，需要向与在发射极电极的表面形成的金属膜的形成所用的装置不同的其它装置更换。另外，存在在工序间输送时附着异物的可能性。并且，需要包覆膜形成后的包覆膜的位置、尺寸以及薄点(thin spot)等的检查，工时增加。
另外，如专利文献1所记载的技术那样，以往提出了作为阻焊膜而将防氧化膜的厚度局部去除的技术，但是，是将相邻的电子部件之间的一部分的防氧化膜去除，并非缓和在发射极电极处的引线框的接合部产生的应力。
因此，本发明的目的在于提供能够抑制工时的增加，且缓和在半导体元件的电极处的引线框的接合部的周缘部产生的应力的技术。
本发明涉及的半导体装置具备：半导体元件，其搭载于散热器之上；引线框，其经由接合材料而与所述半导体元件的电极接合；金属膜，其形成于所述电极的表面；以及防氧化膜，其形成于所述金属膜的表面，所述金属膜的周缘部在整周均从所述防氧化膜露出。
发明的效果
根据本发明，半导体装置具备：半导体元件，其搭载于散热器之上；引线框，其经由接合材料而与半导体元件的电极接合；金属膜，其形成于电极的表面；以及防氧化膜，其形成于金属膜的表面，金属膜的周缘部在整周均从防氧化膜露出。
由于能够抑制接合材料润湿扩展，因此能够抑制电极与引线框之间的接合强度的下降。由此，能够缓和在半导体元件的电极处的引线框的接合部的周缘部产生的应力。
另外，能够免除以往所进行的形成包覆膜的工序，因此能够减小在工序间输送时附着异物的可能性。由此，不需要包覆膜形成后的包覆膜的位置、尺寸以及薄点等的检查，能够削减工时。
本发明的目的、特征、方案以及优点通过以下的详细说明和附图变得更清楚。
附图说明
图1是实施方式1涉及的电力变换装置的概略结构图。
图2是表示实施方式1涉及的半导体装置的接合引线框之前的状态的俯视图。
图3是图2的A-A线剖面图。
图4是实施方式1涉及的半导体装置的俯视图。
图5是图4的B-B线剖面图。
图6是用于对实施方式1涉及的半导体装置的使用了熔融焊料的接合工序进行说明的说明图。
图7是用于对实施方式1涉及的半导体装置的使用了熔融焊料的接合工序进行说明的说明图。
图8是表示实施方式2涉及的半导体装置的接合引线框之前的状态的俯视图。
图9是实施方式2涉及的半导体装置的与图3相当的图。
图10是用于对实施方式2涉及的半导体装置的金属膜的氧化工序进行说明的说明图。
图11是用于对实施方式2涉及的半导体装置的金属膜的氧化工序进行说明的另外的说明图。
图12是表示实施方式3涉及的半导体装置的接合引线框之前的状态的俯视图。
图13是表示实施方式3的变形例涉及的半导体装置的接合引线框之前的状态的俯视图。
图14是表示实施方式4涉及的半导体装置的接合引线框之前的状态的俯视图。
图15是实施方式4涉及的半导体装置的与图3相当的图。
图16是实施方式4涉及的半导体装置的剖面图。
图17是表示实施方式5涉及的半导体装置的接合引线框之前的状态的俯视图。
图18是实施方式5涉及的半导体装置的与图3相当的图。
图19是实施方式5涉及的半导体装置的剖面图。
具体实施方式
＜实施方式1＞
以下，使用附图对本发明的实施方式1进行说明。图1是实施方式1涉及的电力变换装置100的概略结构图。
首先，对实施方式1涉及的电力变换装置100进行简单说明。电力变换装置100例如是连接在直流电源与电力***之间，将从太阳能电池或者燃料电池等输出的直流电力变换为交流电力，将该交流电力向电力***等外部供给的功率调节器。电力变换装置100具备主变换电路40以及控制电路50。主变换电路40具备半导体装置30，主变换电路40将从外部输入的电力进行变换而输出。控制电路50将对主变换电路40进行控制的控制信号向主变换电路40输出。
接下来，对实施方式1涉及的半导体装置30进行说明。图2是表示实施方式1涉及的半导体装置30的接合引线框6之前的状态的俯视图。图3是图2的A-A线剖面图。
如图2和图3所示，半导体装置30具备散热器1、半导体元件3、金属膜4、防氧化膜5以及引线框6。半导体元件3通过作为接合材料的焊料2a而与散热器1的表面接合，由此搭载于散热器1。引线框6通过作为接合材料的焊料2b而与半导体元件3的发射极电极3a接合。更具体而言，引线框6与在发射极电极3a的表面形成的防氧化膜5的表面接合。
接下来，对在发射极电极3a的表面形成的金属膜4以及防氧化膜5进行说明。金属膜4形成于发射极电极3a的接合部3b的表面。防氧化膜5形成于金属膜4的表面中的除了金属膜4的周缘部以外的区域。因此，金属膜4的周缘部在整周均从防氧化膜5露出，在防氧化膜5的区域，焊料2b润湿扩展，其中，该防氧化膜5与金属膜4相比位于发射极电极3a的接合部3b的中央侧。此外，金属膜4的周缘部从防氧化膜5露出的宽度a在整周都是相同的。
接下来，对半导体装置30的制造方法进行说明。图4是实施方式1涉及的半导体装置30的俯视图。图5是图4的B-B线剖面图。
向散热器1的表面将半导体元件3通过焊料2a进行接合、搭载。然后，在半导体元件3的发射极电极3a的接合部3b通过溅射法、蒸镀法或者镀敷法而形成金属膜4。在金属膜4的表面中的除了周缘部的整周以外的区域通过使用了不锈钢掩模等的溅射法、蒸镀法或者镀敷法而形成防氧化膜5。
发射极电极3a由Al等构成。发射极电极3a的表面的层叠膜从半导体元件3侧起依次是Ni/Au等，金属膜4由Ni构成，防氧化膜5由Au等构成。防氧化膜5是为了抑制由Ni构成的金属膜4被氧化，焊料润湿性下降而设置的。
发射极电极3a的表面的层叠膜的厚度是金属膜4＞防氧化膜5的关系。具体地说，金属膜4的厚度大于或等于0.5μm而小于或等于5μm，防氧化膜5的厚度大于或等于0.05μm而小于或等于0.2μm。金属膜4的周缘部从防氧化膜5露出的宽度a大于或等于50μm而小于或等于500μm。金属膜4的厚度越厚，金属膜4的周缘部从防氧化膜5露出的宽度a越大，则焊料越难以润湿扩展，越能够抑制接合部3b的强度的下降，因此能够缓和在接合部3b的周缘部产生的应力。
接下来，如图4和图5所示，使用板焊料12作为接合材料，在防氧化膜5的表面配置板焊料12，使用板焊料12将引线框6与发射极电极3a接合。此时，通过使板焊料12的俯视观察尺寸与防氧化膜5的俯视观察尺寸为相同大小，从而能够在半导体元件3的表面形成焊料瘤。通过变更板焊料12的尺寸，从而能够控制焊料的润湿区域和焊料的量，因此半导体装置30的组装性提高。
或者，也可以如图6和图7所示，使用熔融焊料22作为接合材料，从喷嘴21经由引线框6的孔部6a而向防氧化膜5的表面滴下熔融焊料22，使用熔融焊料22将引线框6与发射极电极3a接合。此时，能够通过熔融焊料22的润湿扩展作用而在半导体元件3的表面形成焊料瘤。能够通过熔融焊料22的润湿扩展而控制焊料的润湿区域，因此半导体装置30的组装性提高。
如上所述，实施方式1涉及的半导体装置30具备：半导体元件3，其搭载于散热器1之上；引线框6，其经由焊料2b而与半导体元件3的发射极电极3a接合；金属膜4，其形成于发射极电极3a的表面；以及防氧化膜5，其形成于金属膜4的表面，金属膜4的周缘部在整周均从防氧化膜5露出。
因此，能够抑制焊料2b润湿扩展，因此能够抑制发射极电极3a与引线框6之间的接合强度的下降。由此，能够缓和在半导体元件3的发射极电极3a处的引线框6的接合部3b的周缘部产生的应力。
由此，能够对以下情况进行抑制，即，通过由热循环引起的应力，使金属膜4变形，发射极电极3a屈曲、剥离，龟裂在表面电极扩展。
另外，能够免除以往所进行的形成包覆膜的工序，因此能够减小在工序间输送时附着异物的可能性。由此，不需要包覆膜形成后的包覆膜的位置、尺寸以及薄点等的检查，能够削减工时。
另外，通过将从防氧化膜5露出的金属膜4的周缘部在空气中室温放置，从而在金属膜4的周缘部形成自然氧化膜，因此不再需要像以往那样通过包覆膜对防氧化膜的表面的外周部进行覆盖，能够削减工时以及部件个数。
电力变换装置100具备：主变换电路40，其具有半导体装置30，且主变换电路40将被输入进来的电力进行变换而输出；以及控制电路50，其将对主变换电路40进行控制的控制信号向主变换电路40输出，因此能够实现可靠性以及品质高的电力变换装置100。
在半导体装置30的制造方法中，使用板焊料12作为接合材料，在防氧化膜5的表面配置板焊料12，使用板焊料12将引线框6与发射极电极3a接合。
因此，通过使板焊料12的俯视观察尺寸与防氧化膜5的俯视观察尺寸为相同大小，从而能够在半导体元件3的表面形成焊料瘤。另外，通过变更板焊料12的尺寸，从而能够控制焊料的润湿区域和焊料的量，因此半导体装置30的组装性提高。
在半导体装置30的制造方法中，使用熔融焊料22作为接合材料，向防氧化膜5的表面滴下熔融焊料22，使用熔融焊料22将引线框6与发射极电极3a接合。
因此，能够通过熔融焊料22的润湿扩展作用而在半导体元件3的表面形成焊料瘤。能够通过熔融焊料22的润湿扩展来控制焊料的润湿区域，因此半导体装置30的组装性提高。
＜实施方式2＞
接下来，对实施方式2涉及的半导体装置30A进行说明。图8是表示实施方式2涉及的半导体装置30A的接合引线框6之前的状态的俯视图。图9是半导体装置30A的与图3相当的图。图10是用于对半导体装置30A的金属膜4的氧化工序进行说明的说明图。图11是用于对半导体装置的金属膜4的氧化工序进行说明的另外的说明图。此外，在实施方式2中，对于与在实施方式1中所说明的结构要素相同的结构要素，标注相同的标号而省略说明。
如图8和图9所示，在实施方式2中，金属膜4的周缘部在整周均呈已被氧化的状态。换言之，在金属膜4的周缘部遍布整周而设置有氧化部7。通过设置氧化部7，从而与实施方式1的情况相比能够进一步控制焊料的润湿区域，因此半导体装置30A的组装性进一步提高。
接下来，对氧化部7的形成方法进行说明。在通过实施方式1中所说明的方法而形成防氧化膜5之后，如图10所示，例如使用在俯视观察时呈矩形形状的加热器31。在使加热器31与金属膜4的周缘部接触的状态下，遍布周缘部的整周而使加热器31移动。由此，能够使金属膜4的接触部分氧化而形成氧化部7。
或者，也能够如图11所示，使用例如框形状的加热器32，遍布金属膜4的周缘部的整周而同时地使加热器32与金属膜4的周缘部接触，使金属膜4的接触部分氧化而形成氧化部7。
如上所述，就实施方式2涉及的半导体装置30A而言，金属膜4的周缘部在整周均呈已被氧化的状态，因此与实施方式1的情况相比能够进一步控制焊料的润湿区域。由此，半导体装置30A的组装性进一步提高。
如图10所示，在半导体装置30A的制造方法中，在使加热器31与金属膜4的周缘部接触的状态下，遍布周缘部的整周而使加热器31移动，使金属膜4的接触部分氧化，因此能够通过简单的方法而进行氧化工序。
另外，如图11所示，在半导体装置30A的制造方法中，遍布金属膜4的周缘部的整周而同时地使框形状的加热器32与金属膜4的周缘部接触，使金属膜4的接触部分氧化，因此，与图10的情况相比能够简单且省时地进行氧化工序。
或者，也可以通过将从防氧化膜5露出的金属膜4的周缘部在空气中室温放置，从而在金属膜4的周缘部形成自然氧化膜。在这种情况下，与图10和图11的情况相比能够简单地进行氧化工序。
＜实施方式3＞
接下来，对实施方式3涉及的半导体装置30B进行说明。图12是表示实施方式3涉及的半导体装置30B的接合引线框6之前的状态的俯视图。此外，在实施方式3中，对于与在实施方式1、2中所说明的结构要素相同的结构要素，标注相同的标号而省略说明。
如图12所示，在实施方式3中，防氧化膜5的角部5a的半径R1比金属膜4的角部4a的半径R2大。在发射极电极3a之上的配置焊料2b的防氧化膜5的角部5a应力特别容易集中。因此，通过使防氧化膜5的角部5a的半径R1比金属膜4的角部4a的半径R2大，从而能够缓和向防氧化膜5的角部5a的应力集中。此外，为了抑制配线电阻，尽可能在大的范围设置发射极电极3a之上的防氧化膜5。
在这种情况下，如图13所示，防氧化膜5在俯视观察时也可以是圆形状或者椭圆形状。图13是表示实施方式3的变形例涉及的半导体装置30C的接合引线框6之前的状态的俯视图。
如上所述，就实施方式3涉及的半导体装置30B而言，防氧化膜5的角部5a的半径R1比金属膜4的角部4a的半径R2大。就实施方式3的变形例涉及的半导体装置30C而言，防氧化膜5在俯视观察时是圆形状或者椭圆形状。因此，能够缓和向防氧化膜5的角部5a的应力集中。
＜实施方式4＞
接下来，对实施方式4涉及的半导体装置30D进行说明。图14是表示实施方式4涉及的半导体装置30D的接合引线框6之前的状态的俯视图。图15是半导体装置30D的与图3相当的图。图16是半导体装置30D的剖面图。此外，在实施方式4中，对于与在实施方式1～3中所说明的结构要素相同的结构要素，标注相同的标号而省略说明。
如图14～图16所示，在实施方式4中，就半导体装置30D而言，金属膜4的周缘部在整周均不从防氧化膜5露出，该半导体装置30D还具备遍布防氧化膜5的周缘部的整周而配置的金属制的导线25。导线25与对半导体元件3进行控制的信号导线为相同部件，例如由铝构成。就半导体装置30D而言，多个短的导线25彼此隔开规定间隔而配置。
通过使导线25与信号导线为相同部件，从而能够在以往的W/B工序内以及相同的装置内配置导线25，不需要换产作业。此外，也可以使导线25为直径大于或等于φ50μm而小于或等于500μm的铝线，缝焊状地键合。
或者，导线25也可以是1根长的导线，也可以是1根长的导线25遍布防氧化膜5的周缘部的整周而连续地配置。
如上所述，就实施方式4涉及的半导体装置30D而言，具备遍布防氧化膜5的周缘部的整周而配置的金属制的导线25。
因此，能够通过金属制的导线25而抑制焊料2b润湿扩展，因此能够抑制发射极电极3a与引线框6之间的接合强度的下降。由此，能够缓和在半导体元件3的发射极电极3a处的引线框6的接合部3b的周缘部产生的应力。
由此，能够对以下情况进行抑制，即，通过由热循环引起的应力，使金属膜4变形，发射极电极3a屈曲、剥离，龟裂在表面电极扩展。
另外，能够免除以往所进行的形成包覆膜的工序，因此能够减小在工序间输送时附着异物的可能性。由此，不需要包覆膜形成后的包覆膜的位置、尺寸以及薄点等的检查，能够削减工时。
另外，通过使导线25与信号导线为相同部件，从而能够在以往的W/B工序内以及相同的装置内配置导线25，不需要换产作业。
＜实施方式5＞
接下来，对实施方式5涉及的半导体装置30E进行说明。图17是表示实施方式5涉及的半导体装置30E的接合引线框6之前的状态的俯视图。图18是半导体装置30E的与图3相当的图。图19是半导体装置30E的剖面图。此外，在实施方式5中，对于与在实施方式1～4中所说明的结构要素相同的结构要素，标注相同的标号而省略说明。
如图17～图19所示，在实施方式5中，就半导体装置30E而言，金属膜4的周缘部在整周均不从防氧化膜5露出，遍布防氧化膜5以及金属膜4的周缘部的整周而在上侧分别设置有凸状的台阶部5b以及台阶部4b。由此，能够控制焊料的润湿区域，且半导体装置30E的组装性提高。
接下来，对台阶部4b的形成方法进行简单说明。在一度形成了金属膜4之后，使用能够将金属膜4的除了周缘部以外的区域覆盖的尺寸的不锈钢掩模等，仅在金属膜4的周缘部层叠金属膜4，由此能够形成台阶部4b。或者，在一度形成了金属膜4之后，通过对焊料2b的接合区域进行蚀刻，从而能够形成台阶部4b。
如上所述，就实施方式5涉及的半导体装置30E而言，遍布防氧化膜5以及金属膜4的周缘部的整周而在上侧分别设置有凸状的台阶部5b以及台阶部4b。
因此，能够通过台阶部5b以及台阶部4b而抑制焊料2b润湿扩展，因此能够抑制发射极电极3a与引线框6之间的接合强度的下降。由此，能够缓和在半导体元件3的发射极电极3a处的引线框6的接合部3b的周缘部产生的应力。
由此，能够对以下情况进行抑制，即，通过由热循环引起的应力，使金属膜4变形，发射极电极3a屈曲、剥离，龟裂在表面电极扩展。
另外，能够免除以往所进行的形成包覆膜的工序，因此能够减小在工序间输送时附着异物的可能性。由此，不需要包覆膜形成后的包覆膜的位置、尺寸以及薄点等的检查，能够削减工时。
对于本发明进行了详细说明，但上述说明在所有方面均为例示，本发明不限定于此。可以理解为在不脱离该发明的范围的情况下能够想到未例示出的无数的变形例。
此外，本发明能够在该发明的范围内对各实施方式自由地进行组合，或者对各实施方式适当地进行变形、省略。
标号的说明
1散热器，2b焊料，3半导体元件，3a发射极电极，4金属膜，4a角部，4b台阶部，5防氧化膜，5a角部，5b台阶部，6引线框，25导线，30、30A、30B、30C、30D、30E半导体装置，31、32加热器，40主变换电路，50控制电路。

Claims (2)

1.一种半导体装置，其具备：
半导体元件，其搭载于散热器之上；
引线框，其经由接合材料而与所述半导体元件的电极接合；
金属膜，其形成于所述电极的表面；
防氧化膜，其形成于所述金属膜的表面；以及
金属制的导线，其遍布所述防氧化膜的周缘部的整周而配置，与对所述半导体元件进行控制的信号导线为相同部件。
2.一种电力变换装置，其具备：
主变换电路，其具有权利要求1所述的半导体装置，且该主变换电路将被输入进来的电力进行变换而输出；以及
控制电路，其将对所述主变换电路进行控制的控制信号向所述主变换电路输出。
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