CN110401420B - Millimeter wave frequency multiplier circuit based on active millimeter wave frequency multiplier base bias voltage and fundamental wave input signal power amplitude relation - Google Patents
Millimeter wave frequency multiplier circuit based on active millimeter wave frequency multiplier base bias voltage and fundamental wave input signal power amplitude relation Download PDFInfo
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- CN110401420B CN110401420B CN201910599066.XA CN201910599066A CN110401420B CN 110401420 B CN110401420 B CN 110401420B CN 201910599066 A CN201910599066 A CN 201910599066A CN 110401420 B CN110401420 B CN 110401420B
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- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
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Abstract
The invention discloses a millimeter wave frequency multiplier circuit based on the relation between the base bias voltage of an active millimeter wave frequency multiplier and the power amplitude of a fundamental wave input signal, wherein the fundamental wave signal input end is connected with a radio frequency coupler, the direct-through end of the radio frequency coupler is connected with an input matching, and the coupling end is connected with a radio frequency detector; one end of a primary coil of the millimeter wave transformer is connected with the input matched output end, and the other end of the primary coil is grounded; the output end of the radio frequency detector is connected with the input end of the single chip microcomputer control system, and the output end of the single chip microcomputer control system is connected with a radio frequency center virtual place of a secondary coil of the millimeter wave transformer; two ends of the secondary coil are respectively connected with two base terminals of the frequency doubling core, two emitters of the frequency doubling core are respectively connected with input ends matched with outputs, and the output ends matched with the outputs are connected with a harmonic signal output end. The invention can improve the harmonic output signal power of the active millimeter wave frequency multiplier, can also improve the conversion efficiency from direct current to radio frequency signals, and can not increase the power consumption of the active millimeter wave frequency multiplier.
Description
Technical Field
The invention relates to the technical field of active millimeter wave frequency multipliers, in particular to a millimeter wave frequency multiplier circuit based on the relation between base bias voltage of an active millimeter wave frequency multiplier and power amplitude of fundamental wave input signals.
Background
With the further development of radio technology, the spectrum resources in the low frequency band are very crowded, and the channel capacity in the low frequency band is difficult to meet the demand for the future ultra-high speed communication application. However, in the millimeter wave frequency band, a large amount of spectrum resources are not developed and utilized, and the millimeter wave frequency band is wider and can be used for transmitting higher speed, so that higher communication capacity is obtained. At present, more and more applications including wireless local area networks, terahertz imaging, millimeter wave vehicle-mounted radars, spectroscopy, remote sensing and the like have emerged internationally for millimeter wave frequency bands.
For all these millimeter wave systems, the design of the silicon-based broadband frequency source circuit with low phase noise and high output power has been a difficult point due to the influence of the parasitic parameters of the circuit and the limited quality factor of the passive device. One of the commonly used solutions to this problem is to use a low frequency pll chip plus a frequency multiplication link to form a signal source chip with a millimeter wave frequency band, a broadband, a high output power, and a low phase noise. In the low-frequency phase-locked loop double-frequency link structure, the resonant cavity of the oscillator works at a position of N (N is more than or equal to 2) times of the output frequency, the quality factor of the varactor is greatly improved, and the phase noise of the oscillator is effectively improved. In addition, the low-frequency phase-locked loop double-frequency link structure can simultaneously extract fundamental wave signals at a low frequency, a frequency divider working in a millimeter wave frequency band can be omitted, and the power consumption of a frequency source system can be greatly reduced.
However, due to the limited MAG (maximum available radio frequency signal gain) of the active device in the millimeter wave band and the limited quality factor value (usually determined by microstrip line, inductance and capacitance) of the passive device, the frequency conversion gain and the maximum output power of the active frequency multiplier are greatly reduced as the working frequency is increased. One of the common solutions is to use limited conversion gain to obtain relatively high harmonic output signal power by increasing the power of the input fundamental signal. However, due to the limited threshold voltage of the silicon-based chip, the output power value of the corresponding low-frequency phase-locked loop chip is limited, and it is difficult to provide sufficient fundamental input signal power to drive the active frequency multiplier.
Therefore, it is necessary to invent a technology that can obtain the maximum frequency conversion gain and the maximum harmonic output signal power by adjusting the frequency multiplication core base bias voltage according to the power of the fundamental input signal.
Disclosure of Invention
The purpose of the invention is as follows: the invention provides a millimeter wave frequency multiplier circuit based on the relation between base bias voltage of an active millimeter wave frequency multiplier and power amplitude of fundamental wave input signals, aiming at the problem that harmonic output signal power and variable frequency gain of the existing active millimeter wave frequency multiplier are small.
The technical scheme is as follows: in order to realize the purpose of the invention, the technical scheme adopted by the invention is as follows:
a millimeter wave frequency multiplier circuit based on the relation between base bias voltage of an active millimeter wave frequency multiplier and power amplitude of fundamental wave input signals comprises a fundamental wave signal input end, a radio frequency coupler, a radio frequency detector, a single chip microcomputer control system, input matching, a millimeter wave transformer, a frequency multiplication core, output matching, a harmonic signal output end and a radio frequency choke coil L1, wherein the fundamental wave signal input end transmits fundamental wave input signals into the radio frequency coupler, the fundamental wave input signals are transmitted into the input matching through a through end of the radio frequency coupler, and the fundamental wave input signals are transmitted into the radio frequency detector through a coupling end of the radio frequency coupler;
the input matching output end is electrically connected with one end of a primary coil of the millimeter wave transformer, and the other end of the primary coil of the millimeter wave transformer is grounded;
the output end of the radio frequency detector is electrically connected with the input end of the single chip microcomputer control system, the output end of the single chip microcomputer control system is electrically connected with a radio frequency center virtual point of a secondary coil of the millimeter wave transformer and the input end of a first capacitor C1, and the output end of the first capacitor C1 is grounded;
two ends of a secondary coil of the millimeter wave transformer are respectively and electrically connected with two base terminals of the frequency doubling core, two emitters of the frequency doubling core are respectively and electrically connected with an input end matched with the output and an input end of the radio frequency choke coil L1, an output end matched with the output is electrically connected with a harmonic signal output end, and an output end of the radio frequency choke coil L1 is grounded.
Further, the radio frequency detector converts a fundamental wave input signal into a direct current level and transmits the direct current level to the single chip microcomputer control system.
Further, the single chip microcomputer control system outputs base bias voltage corresponding to the fundamental wave input signal, and transmits the base bias voltage to the frequency doubling core through a radio frequency center virtual point of a secondary coil of the millimeter wave transformer.
Further, the amplitude of the base bias voltage of the frequency multiplication core is determined by the power range of the fundamental wave input signal.
Further, the frequency doubling core includes a first transistor Q1 and a second transistor Q2, one end of a secondary coil of the millimeter wave transformer is electrically connected to a base of the first transistor Q1, the other end of the secondary coil is electrically connected to a base of the second transistor Q2, a collector of the first transistor Q1 is electrically connected to a collector of the second transistor Q2, and an emitter of the first transistor Q1 is electrically connected to an emitter of the second transistor Q2, an input end with matched output, and an input end of the radio frequency choke coil L1.
Further, the frequency doubling core comprises a differential structure or a single-ended structure.
Has the advantages that: compared with the prior art, the technical scheme of the invention has the following beneficial technical effects:
the output power improving technology of the invention can improve the harmonic output signal power of the active millimeter wave frequency multiplier, can also improve the conversion efficiency of direct current to radio frequency signals, and can not increase the power consumption of the active millimeter wave frequency multiplier, thereby improving the frequency conversion gain of the active millimeter wave frequency multiplier, and being suitable for the application occasions of the active millimeter wave frequency multiplier with high output power and high efficiency.
Drawings
FIG. 1 is a schematic diagram of the configuration of a millimeter wave frequency multiplier system of the present invention;
FIG. 2 is a schematic circuit diagram of a millimeter wave frequency multiplier system of the present invention applied to a D-band millimeter wave frequency multiplier;
FIG. 3 is a diagram showing the test results of the common-collector differential active frequency doubler without the input end second harmonic resonant cavity applied to a D band according to the present invention;
part names corresponding to reference numbers in the drawings:
1. a fundamental wave signal input end; 2. a radio frequency coupler; 3. a radio frequency detector; 4. a singlechip control system; 5. input matching; 6. a millimeter wave transformer; 61. a primary coil of a millimeter wave transformer; 62. a secondary coil of the millimeter wave transformer; 7. frequency doubling kernel; 71. a first transistor Q1; 72. a second transistor Q2; 8. output matching; 9. a harmonic signal output terminal; 10. a radio frequency choke L1.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. The described embodiments are a subset of the embodiments of the invention and are not all embodiments of the invention. Thus, the following detailed description of the embodiments of the present invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention.
Example 1
Referring to fig. 1, the present embodiment provides a millimeter wave frequency multiplier circuit based on the relationship between the base bias voltage of the active millimeter wave frequency multiplier and the power amplitude of the fundamental input signal, and the millimeter wave frequency multiplier system is manufactured by a silicon-based bipolar metal oxide semiconductor integrated circuit process. Similarly, the millimeter wave may be manufactured by other methods without specific requirements, and the process in this embodiment is only one of them.
The millimeter wave frequency multiplier system comprises a fundamental wave signal input end 1, a radio frequency coupler 2, a radio frequency detector 3, a single chip microcomputer control system 4, an input matching 5, a millimeter wave transformer 6, a frequency multiplication core 7, an output matching 8, a harmonic signal output end 9 and a radio frequency choke coil L110. The fundamental wave signal input end 1 is electrically connected with the input end of the radio frequency coupler 2, the straight-through end of the radio frequency coupler 2 is electrically connected with the input end of the input matching 5, and the coupling end is electrically connected with the input end of the radio frequency detector 3. That is, the fundamental wave input terminal 1 transmits a fundamental wave input signal into the rf coupler 2, and then the fundamental wave input signal is transmitted into the input matching 5 through the through terminal of the rf coupler 2, and into the rf detector 3 through the coupling terminal of the rf coupler 2.
The output end of the input matching 5 is electrically connected with one end of the primary coil 61 of the millimeter wave transformer, and the other end of the primary coil 61 of the millimeter wave transformer is grounded.
Meanwhile, the output end of the radio frequency detector 3 is electrically connected with the input end of the single chip microcomputer control system 4, the output end of the single chip microcomputer control system 4 is electrically connected with the radio frequency center virtual point of the secondary coil 62 of the millimeter wave transformer and the input end of the first capacitor C1, the input end of the first capacitor C1 is also electrically connected with the radio frequency center virtual point of the secondary coil 62 of the millimeter wave transformer, and the output end of the first capacitor C1 is grounded.
That is, after the rf detector 3 receives the fundamental input signal transmitted by the rf coupler 2, the rf detector 3 converts the fundamental input signal into a dc level, and transmits the dc level to the one-chip microcomputer control system 4. The single chip microcomputer control system 4 is provided with a control program, so that the single chip microcomputer control system 4 can output base bias voltage corresponding to the direct current level through the control program, and transmit the base bias voltage to the frequency doubling core 7 through a radio frequency center virtual point of the secondary coil 62 of the millimeter wave transformer.
In the present embodiment, the frequency doubling core 7 includes a first transistor Q171 and a second transistor Q272. Two ends of the secondary coil 62 of the millimeter wave transformer are electrically connected to two base terminals of the frequency doubling core 7, respectively, that is, one end of the secondary coil 62 of the millimeter wave transformer is electrically connected to the base of the first transistor Q171, and the other end is electrically connected to the base of the second transistor Q272.
The collector of the first transistor Q171 is electrically connected to the collector of the second transistor Q272, and the emitter of the first transistor Q171 is electrically connected to the emitter of the second transistor Q272. Meanwhile, the emitter of the first transistor Q171 and the emitter of the second transistor Q272 are both electrically connected to the input terminal of the output matching 8 and the input terminal of the rf choke L110, the output terminal of the output matching 8 is electrically connected to the harmonic signal output terminal 9, and the output terminal of the rf choke L110 is grounded.
In the present embodiment, in particular, the base bias voltage of the frequency doubling core 7 is an amplitude-controllable variable. When the power range of the fundamental wave input signal of the frequency multiplier needs to be adjusted, the amplitude of the base bias voltage of the frequency multiplication core 7 only needs to be adjusted, so that the power range of the fundamental wave input signal of the frequency multiplier can be adjusted. That is, the power range of the fundamental input signal is determined by the magnitude of the base bias voltage of the frequency doubling core 7.
Meanwhile, the structure of the frequency doubling core 7 is not limited, and can be a differential structure or a single-ended structure, and can be specifically selected according to actual requirements.
Referring to fig. 2, fig. 2 includes four diagrams, where fig. 2 (a) is an active double frequency device of a common collector differential mechanism without an input-end second harmonic resonant cavity, and its basic structure is an active differential double frequency device in which a frequency doubling core base bias voltage is adjustable according to the power of an input radio frequency signal of the frequency multiplier to obtain the maximum output harmonic signal power, and includes a base signal input port, an input matching network, a millimeter wave transformer for inputting single-end to differential signal conversion, a pair of differential structure frequency doubling core transistors (Q1, Q2), a radio frequency choke L1, an output matching network, and a harmonic signal output port.
Different from the fixed base bias voltage of the traditional millimeter wave frequency multiplier, the base bias voltage of the frequency multiplier is set to be a variable with an adjustable external voltage value, and for a given certain fundamental wave input signal power value, the base bias voltage value can be adjusted to obtain the maximum variable frequency gain and harmonic output signal power value, so that the conversion efficiency from direct current to radio frequency signals of the millimeter wave frequency multiplier can be improved.
Fig. 2 (b) shows an active frequency doubler of a common collector differential mechanism with an input end second harmonic resonant cavity, which is different from the active frequency doubler in fig. 2 (a) in that: the input end is added with a second harmonic resonator formed by a series inductance capacitor, the resonator can effectively resonate the reflected second harmonic signal power, the frequency conversion gain of the frequency doubler and the output radio frequency signal power are further improved, but the working bandwidth of the frequency doubler is deteriorated. The second harmonic resonator formed by the series inductance and capacitance is specifically as follows: the input end of the second inductor L2 is electrically connected to the base of the fourth transistor Q4, the output end is electrically connected to the input end of the second capacitor C2, and the output end of the second capacitor C2 is grounded.
Fig. 2 (c) shows an active frequency doubler with a common emitter difference mechanism without an input-end second harmonic cavity, which is different from the active frequency doubler in fig. 2 (a) in that: the frequency doubling core adopts a common emitter structure. The difference lies in that: the active frequency doubler in fig. 2 (a) is suitable for the scenario with higher operating frequency, and the active frequency doubler in fig. 2 (c) is suitable for the scenario with lower operating frequency.
Fig. 2 (d) shows a common emitter difference mechanism active frequency doubler with an input end second harmonic resonant cavity, and the differences between fig. 2 (c) and fig. 2 (a) and fig. 2 (b) are the same, and will not be described again here.
Referring to fig. 3, it can be seen that for different values of fundamental input signal power, the maximum harmonic output signal power corresponds to different fundamental bias voltages. For example, when the power value of the fundamental wave input signal is 10dBm, and the base bias voltage is changed in the interval of 0.1 to 0.7V, the power of the obtained harmonic output signal of the frequency multiplier is changed in the interval of-9.5 to 2.3dBm, and the output power of the harmonic signal reaches the maximum value in the base bias voltage state of 0.55V, namely the output power of the harmonic signal is 2.3dBm, and the change of the base bias voltage obviously improves the power value of the frequency multiplication nuclear harmonic output signal.
Meanwhile, as can be clearly seen from fig. 3, as the power value of the fundamental input signal increases, the base bias voltage required for obtaining the power value of the maximum harmonic output signal gradually decreases, and when the power of the fundamental input signal changes from 10dBm to 16dBm, the base bias voltage required for obtaining the power value of the maximum harmonic output signal gradually decreases from 0.55V to 0.15V.
The present invention and its embodiments have been described in an illustrative manner, and are not to be considered limiting, as illustrated in the accompanying drawings, which are merely exemplary embodiments of the invention and not limiting of the actual constructions and methods. Therefore, if the person skilled in the art receives the teaching, the structural modes and embodiments similar to the technical solutions are not creatively designed without departing from the spirit of the invention, and all of them belong to the protection scope of the invention.
Claims (6)
1. A millimeter wave frequency multiplier circuit based on the relation between the base bias voltage of an active millimeter wave frequency multiplier and the power amplitude of a fundamental wave input signal is characterized by comprising a fundamental wave signal input end (1), a radio frequency coupler (2), a radio frequency detector (3), a single chip microcomputer control system (4), an input matching (5), a millimeter wave transformer (6), a frequency multiplication core (7), an output matching (8), a harmonic signal output end (9) and a radio frequency choke coil L1 (10), wherein the fundamental wave signal input end (1) transmits the fundamental wave input signal to the radio frequency coupler (2), the fundamental wave input signal is transmitted to the input matching (5) through a through end of the radio frequency coupler (2), and the fundamental wave input signal is transmitted to the radio frequency detector (3) through a coupling end of the radio frequency coupler (2);
the output end of the input matching (5) is electrically connected with one end of a primary coil (61) of the millimeter wave transformer, and the other end of the primary coil (61) of the millimeter wave transformer is grounded;
the output end of the radio frequency detector (3) is electrically connected with the input end of the single chip microcomputer control system (4), the output end of the single chip microcomputer control system (4) is electrically connected with a radio frequency center virtual point of a secondary coil (62) of the millimeter wave transformer and the input end of a first capacitor C1, and the output end of the first capacitor C1 is grounded;
two ends of a secondary coil (62) of the millimeter wave transformer are respectively and electrically connected with two base terminals of a frequency doubling core (7), two emitting electrodes of the frequency doubling core (7) are both electrically connected with an input end of an output matching (8) and an input end of a radio frequency choke coil L1 (10), an output end of the output matching (8) is electrically connected with a harmonic signal output end (9), and an output end of the radio frequency choke coil L1 (10) is grounded.
2. The millimeter wave frequency multiplier circuit based on the relation between the base bias voltage of the active millimeter wave frequency multiplier and the power amplitude of the fundamental input signal as claimed in claim 1, wherein the radio frequency detector (3) converts the fundamental input signal into a direct current level and transmits the direct current level to the singlechip control system (4).
3. The millimeter wave frequency multiplier circuit based on the power amplitude relation between the base bias voltage of the active millimeter wave frequency multiplier and the fundamental input signal is characterized in that the single-chip microcomputer control system (4) outputs the base bias voltage corresponding to the fundamental input signal and transmits the base bias voltage to the frequency multiplication core (7) through a radio frequency center virtual point of a secondary coil (62) of the millimeter wave transformer.
4. The millimeter wave frequency multiplier circuit based on the relation between the base bias voltage of the active millimeter wave frequency multiplier and the power amplitude of the fundamental input signal as claimed in claim 3, characterized in that the amplitude of the base bias voltage of the frequency doubling core (7) is determined by the power range of the fundamental input signal.
5. The millimeter wave frequency multiplier circuit based on the relation between the base bias voltage of the active millimeter wave frequency multiplier and the power amplitude of the fundamental input signal, according to claim 3, wherein the frequency multiplication core (7) comprises a first transistor Q1 (71) and a second transistor Q2 (72), one end of the secondary coil (62) of the millimeter wave transformer is electrically connected to the base of the first transistor Q1 (71), the other end of the secondary coil is electrically connected to the base of the second transistor Q2 (72), the collector of the first transistor Q1 (71) is electrically connected to the collector of the second transistor Q2 (72), and the emitter of the first transistor Q1 (71) is electrically connected to the emitter of the second transistor Q2 (72), the input end of the output matching (8) and the input end of the radio frequency choke L1 (10).
6. The millimeter wave frequency multiplier circuit based on the relation between the base bias voltage of the active millimeter wave frequency multiplier and the power amplitude of the fundamental input signal as claimed in claim 5, characterized in that the frequency doubling core (7) comprises a differential structure or a single-ended structure.
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| CN110995163B (en) * | 2019-11-26 | 2023-05-12 | 杭州电子科技大学 | Fundamental wave mixing and harmonic mixing hybrid millimeter wave dual-band passive mixer |
| CN111884606A (en) * | 2020-06-22 | 2020-11-03 | 南京迈矽科微电子科技有限公司 | Broadband matching circuit and millimeter wave power amplification circuit based on millimeter wave transformer |
| CN216390923U (en) * | 2021-11-09 | 2022-04-26 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier, radio frequency chip and wireless communication equipment |
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