CN115833756A - Broadband miniaturized mixer integrated with active balun - Google Patents
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- CN115833756A CN115833756A CN202211625911.4A CN202211625911A CN115833756A CN 115833756 A CN115833756 A CN 115833756A CN 202211625911 A CN202211625911 A CN 202211625911A CN 115833756 A CN115833756 A CN 115833756A
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Abstract
The invention discloses a broadband miniaturized mixer integrated with an active balun, which comprises an active balun circuit, an intermediate frequency amplification circuit, a radio frequency and local oscillator matching circuit and a mixing circuit based on a gain multiplication technology. The active balun circuit converts an input single-ended intermediate frequency signal into a differential intermediate frequency signal, the drain output of the intermediate frequency amplifying circuit is directly connected with the mixing circuit, the mixing circuit based on the gain multiplication technology carries out double-balanced mixing on a local oscillation signal fed in by a single-to-double feed-in transformer and an intermediate frequency signal fed in by the intermediate frequency amplifying circuit, and the radio frequency matching circuit converts a radio frequency signal into a single-ended signal to be output. Different from the traditional Gilbert mixer, the active balun technology and the current multiplexing-based push-pull amplifier technology are adopted in the invention, so that the bandwidth and the conversion gain of the mixer are effectively improved, the chip area and the manufacturing cost are greatly reduced, and meanwhile, the gain multiplication technology is adopted in the mixing, so that the conversion gain of the mixer is further improved on the premise of low power consumption.
Description
Technical Field
The invention relates to an integrated circuit, in particular to a broadband miniaturized mixer integrated with an active balun.
Background
Next-generation wireless communication is extending to the terahertz frequency band with abundant frequency resources. Terahertz (THz) waves can be defined as electromagnetic waves in a frequency band between 0.1THz-10THz frequencies. Terahertz communication is a technology for realizing wireless communication by taking a terahertz frequency band as a carrier wave. The terahertz frequency band has both high-rate transmission capability and high-precision positioning sensing capability by virtue of abundant frequency band resource advantages. Although the terahertz frequency band has richer spectrum resources and benefits for data transmission and communication, higher frequencies also place higher demands on transceivers in wireless communication systems.
As an indispensable part of a transmitter system, a mixer has a problem that it is possible to provide a high-performance mixing performance in a wide band in order to realize a higher rate and a more complicated modulation scheme for communication. In a wireless communication system, in order to reduce cost, a superheterodyne direct upconversion transmitter technology is generally adopted, but an intermediate frequency amplification circuit in the superheterodyne direct upconversion transmitter technology has a low operating frequency, and a passive device can greatly increase the chip area, that is, the broadband performance of a mixer is exchanged by sacrificing the area. Therefore, the miniaturization of the mixer chip is one of the problems that needs to be solved at present, on the premise of ensuring the basic circuit performance such as bandwidth and conversion gain.
Disclosure of Invention
The technical problem is as follows: aiming at the problems of narrow bandwidth, low conversion gain, large passive network area and the like of the traditional mixer, the invention provides the broadband miniaturized mixer integrated with the active balun, which can greatly reduce the chip area of the mixer while improving the bandwidth and the conversion gain.
The technical scheme is as follows: the invention discloses an active balun integrated broadband miniaturized frequency mixer, which comprises an active balun circuit, an intermediate frequency amplification circuit, a radio frequency and local oscillator matching circuit and a frequency mixing circuit based on a gain multiplication technology; the differential output end of the intermediate frequency amplifying circuit is correspondingly connected with the differential input end of the mixing circuit based on the gain multiplication technology, the radio frequency positive signal and the radio frequency negative signal of the mixing circuit are converted into a single-ended radio frequency signal to be output through a first transformer balun, and the single-ended local oscillation signal is converted into a local oscillation positive signal and a local oscillation negative signal of the mixing circuit to be input through a second transformer balun.
The active balun circuit consists of a primary common-gate amplifier and a primary common-source amplifier, wherein the common-gate amplifier consists of a first transistor, a second transistor, a first capacitor, a third capacitor, a first resistor and a third resistor, one end of the first capacitor is connected with an input intermediate-frequency signal, the other end of the first capacitor is connected with a drain electrode of the first transistor and a source electrode of the second transistor, a source electrode of the first transistor is grounded, and a grid electrode of the first transistor is connected with a first bias voltage through the first resistor; one end of the third resistor is connected with the power supply, the other end of the third resistor is connected with the drain electrode of the second transistor, one end of the third capacitor is connected with the drain electrode of the second transistor and the third resistor, and the other end of the third capacitor is used as the input end of the intermediate-frequency positive signal of the active balun circuit; the common source amplifier is composed of a third transistor, a fourth capacitor, a second resistor and a fourth resistor, the grid electrode of the third transistor is connected with a second bias voltage through the second resistor, the grid electrode of the third transistor is connected with the drain electrode of the first transistor through the second capacitor, the source electrode of the third transistor is grounded, the drain electrode of the third transistor is connected with a power supply through the fourth resistor, one end of the fourth capacitor is connected with the drain electrode of the third transistor and the fourth resistor, and the other end of the fourth capacitor is used as the input end of an intermediate frequency negative signal of the active balun circuit; the structure realizes input matching and conversion of single-ended signals and differential signals.
The frequency mixing circuit with the gain multiplication technology consists of a double-balanced frequency mixing circuit and a gain multiplication technology circuit, wherein the double-balanced frequency mixing circuit consists of a fourth transistor, a fifth transistor, a sixth transistor and a seventh transistor, the fourth transistor is connected with the source electrode and the source electrode of the fifth transistor, the sixth transistor is connected with the source electrode and the source electrode of the seventh transistor, the fifth transistor is connected with the grid electrode and the grid electrode of the sixth transistor, the grid electrode of the fourth transistor and the grid electrode of the seventh transistor are directly connected and then serve as the input end of a local oscillator positive signal of the double-balanced frequency mixing circuit, the grid electrodes of the fifth transistor and the sixth transistor are directly connected and then serve as the input end of a local oscillator negative signal of the double-balanced frequency mixing circuit, the drain electrodes of the fourth transistor and the sixth transistor are directly connected and then serve as the output end of a radio frequency positive signal of the frequency mixing circuit, and the drain electrodes of the fifth transistor and the seventh transistor are directly connected and then serve as the output end of a radio frequency negative signal of the frequency mixing circuit; the gain multiplication technology circuit is composed of an eighth transistor and a ninth transistor, the sources of the eighth transistor and the ninth transistor are connected with a power supply, the drain of the eighth transistor is connected with the grid of the ninth transistor, the fourth transistor is connected with the source of the fifth transistor, the drain of the ninth transistor is connected with the grid of the eighth transistor, and the sixth transistor is connected with the source of the seventh transistor.
The intermediate frequency amplifying circuit consists of a first-stage differential push-pull amplifier, the intermediate frequency differential signal positive end push-pull amplifier consists of a tenth transistor, an eleventh transistor and a fifth resistor, the tenth transistor is connected with the grid and the grid of the eleventh transistor, the drain and the drain are connected, the source of the tenth transistor is grounded, the source of the eleventh transistor is connected with a power supply, one end of the fifth resistor is connected with the grids of the tenth transistor and the eleventh transistor and is directly connected to serve as the input end of an intermediate frequency positive signal of the intermediate frequency amplifying circuit, and the other end of the fifth resistor is connected with the drains of the tenth transistor and the eleventh transistor to serve as the positive output end of the intermediate frequency amplifying circuit and is connected with a mixing circuit based on a gain multiplication technology; the intermediate frequency differential signal negative terminal push-pull amplifier consists of a twelfth transistor, a thirteenth transistor and a sixth resistor, wherein the grids of the twelfth transistor and the thirteenth transistor are connected with the grid, the drain electrode of the twelfth transistor is connected with the drain electrode of the thirteenth transistor, the source electrode of the twelfth transistor is grounded, the source electrode of the thirteenth transistor is connected with a power supply, one end of the sixth resistor is connected with the grid electrode of the twelfth transistor and the grid electrode of the thirteenth transistor and then directly connected to serve as the input end of an intermediate frequency negative signal of the intermediate frequency amplifying circuit, and the other end of the sixth resistor is connected with the drains of the twelfth transistor and the thirteenth transistor, namely, the drain electrode of the twelfth transistor and the drain electrode of the thirteenth transistor serve as the negative output end of the intermediate frequency amplifying circuit and is connected with the mixing circuit based on the gain multiplication technology.
The radio frequency and local oscillator matching circuit is composed of a radio frequency output matching circuit and a local oscillator input matching circuit, the radio frequency output matching circuit is composed of a first transformer balun and a fifth capacitor, the fifth capacitor is connected to two ends of a primary coil of the first transformer balun in parallel, one end of the primary coil of the first transformer balun is connected with a radio frequency signal, one end of the primary coil of the first transformer balun is connected with the ground, one end of a secondary coil of the first transformer balun is connected with a radio frequency signal positive signal of the frequency mixing circuit, the other end of the secondary coil of the first transformer balun is connected with a radio frequency signal negative signal of the frequency mixing circuit, and a center tap is connected with a power supply.
The local oscillator input matching circuit consists of a second transformer balun and a sixth capacitor, the sixth capacitor is connected in parallel with two ends of a primary coil of the second transformer balun, one end of the primary coil of the second transformer balun is connected with a local oscillator signal, and the other end of the primary coil of the second transformer balun is connected with the ground; one end of a secondary coil of the second transformer balun is connected with a local oscillation positive signal of the frequency mixing circuit, the other end of the secondary coil of the second transformer balun is connected with a local oscillation negative signal of the frequency mixing circuit, and a center tap is connected with the ground; the structure not only realizes broadband input matching and conversion of single-ended signals and differential signals, but also provides better amplitude and phase balance.
The local oscillator is input into the matching circuit, a center tap of a second transformer balun secondary coil is connected to a third bias voltage through a seventh resistor, direct current bias is directly provided for gates of a fourth transistor, a fifth transistor and a sixth transistor seventh transistor through a coupling inductor, and the third bias voltage selects direct current voltage when the performance of the mixing circuit reaches the optimum under the amplitude of corresponding input signals.
The first transformer balun and the second transformer balun are both realized by coupling of metal wires of an integrated circuit process, monolithic integration is realized by adopting the integrated circuit process, and the first transformer balun and the second transformer balun are both of a mutual coupling structure of the same layer of metal or a mutual coupling structure of multiple layers of metal.
Has the advantages that: the invention has the advantages that the invention discloses an active balun integrated broadband miniaturized frequency mixer, which consists of an active balun circuit, an intermediate frequency amplification circuit, a radio frequency and local oscillator matching circuit and a frequency mixing circuit with a gain multiplication technology. The invention replaces the intermediate frequency common source amplifier circuit of the traditional Gilbert mixing unit with a push-pull amplifier circuit on the basis of a double-balanced mixer structure, and introduces an active balun technology and a gain multiplication technology, thereby not only expanding the working bandwidth and improving the conversion gain of the mixer, but also greatly reducing the chip area and lowering the manufacturing cost.
Drawings
FIG. 1 is a schematic diagram of a broadband miniaturized mixer integrated with an active balun according to the present invention;
FIG. 2 is a reflection coefficient of an intermediate frequency input port of the broadband miniaturized mixer integrated with an active balun according to the present invention;
FIG. 3 shows the reflection coefficients of the local oscillator input and the RF output port of the broadband miniaturized mixer integrated with an active balun according to the present invention;
FIG. 4 shows the conversion gain of the broadband miniaturized mixer of the present invention with integrated active balun;
fig. 5 is the output 1dB compression point of the wideband miniaturized mixer integrated with an active balun of the present invention.
The figure has the following components: the first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the fifth transistor M5, the sixth transistor M6, the seventh transistor M7, the eighth transistor M8, the ninth transistor M9, the first capacitor C1, the second capacitor C2, the third capacitor C3, the fourth capacitor C4, the fifth capacitor C5, the sixth capacitor C6, the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the sixth resistor R6, the seventh resistor R7, the first transformer balun XMFR1, the second transformer balun XMFR2, the first bias voltage VB1, the second bias voltage VB2, the third bias voltage VB3, the power supply VCC, the intermediate frequency positive signal, the intermediate frequency negative signal IF +, the radio frequency positive signal RF +, the radio frequency negative signal RF +, the first transformer balun XMFR1, the radio frequency signal LO, the local oscillator signal LO-.
Detailed Description
The present invention will be further explained with reference to the drawings and examples, and embodiments of the present invention include, but are not limited to, the following examples.
The embodiment provides a broadband miniaturized mixer integrated with an active balun, which is composed of an active balun circuit, an intermediate frequency amplifying circuit, a radio frequency and local oscillator matching circuit and a mixing circuit with a gain multiplication technology, as shown in fig. 1.
The active balun circuit consists of a primary common-gate amplifier and a primary common-source amplifier, wherein the common-gate amplifier consists of a first transistor M1, a second transistor M2, a first capacitor C1, a third capacitor C3, a first resistor R1 and a third resistor R3, one end of the first capacitor C1 is connected with an input intermediate-frequency signal IF, the other end of the first capacitor C1 is connected with a drain electrode of the first transistor M1 and a source electrode of the second transistor M2, the source electrode of the first transistor M1 is grounded, a grid electrode of the first transistor M1 is connected with a first resistor R3 providing a first bias voltage VB1, one end of the third resistor R3 is connected with a power supply VDD, one end of the third resistor R3 is connected with a drain electrode of the second transistor M2, one end of the third capacitor C3 is connected with the drain electrode of the second transistor M2 and the third resistor R3, and the other end of the third capacitor C3 is used as an intermediate-frequency positive IF signal of the active balun circuit; the common source amplifier is composed of a third transistor M3, a fourth capacitor C4, a second resistor R2 and a fourth resistor R4, the grid electrode of the third transistor M3 is connected with a first resistor R3 and a second capacitor C2 which provide a first bias voltage VB1, the source electrode of the third transistor M3 is grounded, one end of the fourth resistor R4 is connected with a power supply VCC, one end of the fourth resistor R4 is connected with the drain electrode of the third transistor M3, one end of the fourth capacitor C4 is connected with the drain electrode of the third transistor M3 and the fourth resistor R4, and the other end of the fourth capacitor C4 is used as an intermediate frequency negative signal IF-of the active balun circuit. By adopting the structure, input matching is realized, and conversion of single-ended signals and differential signals is realized;
the frequency mixing circuit with the gain multiplication technology consists of a double-balanced frequency mixing circuit and a gain multiplication technology circuit, the double-balanced frequency mixing circuit consists of a fourth transistor M4, a fifth transistor M5, a sixth transistor M6 and a seventh transistor M7, the fourth transistor M4 is connected with the source electrode and the source electrode of the fifth transistor M5, the sixth transistor M6 is connected with the source electrode and the source electrode of the seventh transistor M7, the fifth transistor M5 is connected with the grid electrode and the grid electrode of the sixth transistor M6, the grid electrode of the fourth transistor M4 forms a local oscillation positive LO + of the frequency mixing circuit, the grid electrode of the seventh transistor M7 forms a local oscillation negative LO + of the frequency mixing circuit, the drain electrode and the drain electrode of the fourth transistor M4 are connected with the drain electrode and the drain electrode of the sixth transistor M6 to form a radio frequency signal positive output end RF + of the frequency mixing circuit, and the drain electrode of the fifth transistor M5 and the seventh transistor M7 are connected to form a radio frequency negative signal RF-; the gain multiplication technology circuit consists of an eighth transistor M8 and a ninth transistor M9, the sources of the eighth transistor M8 and the ninth transistor M9 are connected with a power supply VCC, one end of the drain of the eighth transistor M8 is connected with the grid of the ninth transistor M9, and the other end is connected with the sources of the fourth transistor M4 and the fifth transistor M5 in the double-balanced mixer circuit;
the intermediate frequency amplifying circuit consists of a first-stage differential push-pull amplifier, the intermediate frequency differential signal positive terminal push-pull amplifier consists of a tenth transistor M10, an eleventh transistor M11 and a fifth resistor R5, the tenth transistor M10 is connected with the grid and the grid of the eleventh transistor M11, the drain is connected with the drain, the source of the tenth transistor M10 is grounded, the source of the eleventh transistor M11 is connected with a power supply VCC, one end of the fifth resistor R5 is connected with the grids of the tenth transistor M10 and the eleventh transistor M11, namely an intermediate frequency positive signal IF +, and the other end is connected with the drains of the tenth transistor M10 and the eleventh transistor M11 to serve as a positive output end of the intermediate frequency amplifying circuit; the intermediate frequency differential signal negative terminal push-pull amplifier consists of a twelfth transistor M12, a thirteenth transistor M13 and a sixth resistor R6, the grids of the twelfth transistor M12 and the thirteenth transistor M13 are connected with the grid, the drain is connected with the drain, the source of the twelfth transistor M12 is grounded, the source of the thirteenth transistor M13 is connected with a power supply VCC, one end of the sixth resistor R6 is connected with the grids of the twelfth transistor M12 and the thirteenth transistor M13, namely an intermediate frequency negative signal IF-, and the other end is connected with the drains of the twelfth transistor M12 and the thirteenth transistor M13, namely a negative output terminal of the intermediate frequency amplifying circuit;
the radio frequency and local oscillator matching circuit is composed of a radio frequency output matching circuit and a local oscillator input matching circuit, the radio frequency output matching circuit is composed of a first transformer XMFR1 and a fifth capacitor C5, the fifth capacitor C5 is connected to two ends of a primary coil of the first transformer XMFR1 in parallel, one end of the primary coil of the first transformer XMFR1 is connected with a radio frequency signal RF, the other end of the primary coil of the first transformer XMFR1 is connected with the ground, one end of a secondary coil of the first transformer XMFR1 is connected with a radio frequency positive signal RF + of the frequency mixing circuit, the other end of the secondary coil of the first transformer XMFR1 is connected with a radio frequency negative signal RF-of the frequency mixing circuit 0, and a center tap is connected with a power supply VCC; the local oscillator input matching circuit is composed of a second transformer XMFR2 and a sixth capacitor C6, the sixth capacitor C6 is connected to two ends of a primary coil of the first transformer XMFR1 in parallel, one end of the primary coil of the second transformer XMFR2 is connected with a local oscillator signal LO, the other end of the primary coil of the second transformer XMFR2 is connected with the ground, one end of a secondary coil of the second transformer XMFR2 is connected with a local oscillator positive signal LO + of the frequency mixing circuit, the other end of the secondary coil of the second transformer XMFR2 is connected with a local oscillator negative signal LO-, and a center tap is connected with the ground. By adopting the structure, the conversion of broadband input matching and single-ended signals and differential signals is realized, and simultaneously, better amplitude and phase balance degree is provided.
The invention provides a broadband miniaturized mixer circuit integrated with an active balun, which replaces a medium-frequency common source amplifier circuit of a traditional Gilbert mixing unit with a push-pull amplifier circuit on the basis of a double-balanced mixer structure, and introduces an active balun technology and a gain multiplication technology, thereby not only expanding the working bandwidth and improving the conversion gain of the mixer, but also greatly reducing the chip area and reducing the manufacturing cost.
More specifically:
the intermediate frequency part of the invention adopts the active balun technology and the push-pull amplifier technology based on current multiplexing, thereby effectively improving the bandwidth and the conversion gain of the frequency mixer, greatly reducing the chip area and the manufacturing cost, and simultaneously, the frequency mixing part adopts the gain multiplication technology to further improve the conversion gain of the frequency mixer on the premise of low power consumption.
On the basis of a double-balanced mixer structure, the intermediate frequency adopts a push-pull amplifier technology based on current multiplexing. The push-pull amplifier technology based on current multiplexing greatly improves the intermediate frequency amplification capability, conversion gain and linearity of the frequency mixer, saves an input matching circuit of a common source amplifier, greatly saves the chip area and expands the input matching bandwidth of the circuit.
According to the invention, the active balun circuit is introduced into the intermediate frequency part, the intermediate frequency in the superheterodyne direct upconversion transmitter is lower, and the passive balun needs a larger inductance value, so that the chip area is large, the cost is high, meanwhile, the insertion loss of the passive balun can also cause certain influence on a rear-stage circuit, and the passive balun cannot meet the broadband requirement. An active balun circuit is introduced into the intermediate frequency part, and the balun function is combined with a subsequent mixer circuit, so that the insertion loss caused by a passive balun is avoided, and the chip area and the cost are saved.
Based on the working principle, the circuit is designed and simulated based on the CMOS process, and the practicability of the circuit is verified.
FIG. 2 shows the reflection coefficient of the IF input port of the designed mixer circuit, wherein the reflection coefficient of the IF input port is less than-10 dB in the frequency range of 2.7-27 GHz. FIG. 3 shows the reflection coefficients of the local oscillator input port and the RF output port of the designed mixer circuit, wherein the reflection coefficient of the local oscillator input port is smaller than-10 dB in the frequency range of 127-171 GHz, and the reflection coefficient of the RF output port is smaller than-10 dB in the frequency range of 129-174 GHz.
Fig. 4 shows the conversion gain of the designed mixer circuit, and the maximum conversion gain reaches 2.5dB at the frequency of 140 GHz.
FIG. 5 shows the output 1dB compression point for the designed mixer circuit, which is-9 dBm.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. A broadband miniaturization frequency mixer integrated with an active balun is characterized by comprising an active balun circuit, an intermediate frequency amplification circuit, a radio frequency and local oscillator matching circuit and a frequency mixing circuit based on a gain multiplication technology; the intermediate frequency positive signal (IF +) and the intermediate frequency negative signal (IF-) of the active balun circuit are respectively connected with two input ends of the intermediate frequency amplifying circuit, a differential output end of the intermediate frequency amplifying circuit is correspondingly connected with a differential input end of a mixing circuit based on a gain multiplication technology, a radio frequency positive signal (RF +) and a radio frequency negative signal (RF-) of the mixing circuit are converted into a single-ended radio frequency signal (RF) through a first transformer balun (XMFR 1) to be output, and a single-ended local oscillator signal (LO) is converted into a local oscillator positive signal (LO +) and a local oscillator negative signal (LO-) of the mixing circuit to be input through a second transformer balun (XMFR 1).
2. The broadband miniaturized mixer of claim 1, wherein the active balun circuit is composed of a first-stage common-gate amplifier and a first-stage common-source amplifier, the common-gate amplifier is composed of a first transistor (M1), a second transistor (M2), a first capacitor (C1), a third capacitor (C3), a first resistor (R1) and a third resistor (R3), one end of the first capacitor (C1) is connected with the input intermediate frequency signal (IF), the other end of the first capacitor (C1) is connected with the drain of the first transistor (M1) and the source of the second transistor (M2), the source of the first transistor (M1) is grounded, and the gate of the first transistor (M1) is connected with the first bias voltage (VB 1) through the first resistor (R1); one end of a third resistor (R3) is connected with a power supply (VCC), the other end of the third resistor (R3) is connected with the drain electrode of the second transistor (M2), one end of a third capacitor (C3) is connected with the drain electrode of the second transistor (M2) and the third resistor (R3), and the other end of the third capacitor (C3) is used as the input end of an intermediate frequency positive signal (IF +) of the active balun circuit; the common-source amplifier is composed of a third transistor (M3), a fourth capacitor (C4), a second resistor (R2) and a fourth resistor (R4), the grid electrode of the third transistor (M3) is connected with a second bias voltage (VB 2) through the second resistor (R2), the grid electrode of the third transistor (M3) is connected with the drain electrode of the first transistor (M1) through the second capacitor (C2), the source electrode of the third transistor (M3) is grounded, the drain electrode is connected with a power supply (VCC) through the fourth resistor (R4), one end of the fourth capacitor (C4) is connected with the drain electrode of the third transistor (M3) and the fourth resistor (R4), and the other end of the fourth capacitor (C4) is used as the input end of an intermediate frequency negative signal (IF-) of the active balun circuit; the structure realizes input matching and conversion of single-ended signals and differential signals.
3. The broadband miniaturized mixer of claim 1, wherein the mixer circuit with gain multiplication technology is composed of a double balanced mixer circuit and a gain multiplication technology circuit, the double balanced mixer circuit is composed of a fourth transistor (M4), a fifth transistor (M5), a sixth transistor (M6) and a seventh transistor (M7), the fourth transistor (M4) is connected to the source and the source of the fifth transistor (M5), the sixth transistor (M6) is connected to the source and the source of the seventh transistor (M7), the fifth transistor (M5) is connected to the gate and the gate of the sixth transistor (M6), the gate of the fourth transistor (M4) and the gate of the seventh transistor (M7) are directly connected to serve as the input terminal of the local oscillator positive signal (LO +) of the double balanced mixer circuit, the gates of the fifth transistor (M5) and the sixth transistor (M6) are directly connected to serve as the input terminal of the negative oscillator positive signal (LO-) of the double balanced mixer circuit, the drain of the fourth transistor (M4) is directly connected to serve as the output terminal of the local oscillator positive oscillator signal (LO-) of the double balanced mixer circuit, and the drain of the fourth transistor (M6) is directly connected to serve as the output terminal of the RF mixer circuit; the gain multiplication technology circuit is composed of an eighth transistor (M8) and a ninth transistor (M9), the sources of the eighth transistor (M8) and the ninth transistor (M9) are connected with a power supply (VCC), the drain of the eighth transistor (M8) is connected with the grid of the ninth transistor (M9), the fourth transistor (M4) is connected with the source of the fifth transistor (M5), the drain of the ninth transistor (M9) is connected with the grid of the eighth transistor (M8), and the sixth transistor (M6) is connected with the source of the seventh transistor (M7).
4. The broadband miniaturized mixer of the integrated active balun according to claim 1, wherein the intermediate frequency amplifying circuit is composed of a first-stage differential push-pull amplifier, the intermediate frequency differential signal positive side push-pull amplifier is composed of a tenth transistor (M10), an eleventh transistor (M11) and a fifth resistor (R5), the tenth transistor (M10) is connected with the grid and the grid of the eleventh transistor (M11), the drain is connected with the drain, the source of the tenth transistor (M10) is grounded, the source of the eleventh transistor (M11) is connected with the power supply (VCC), one end of the fifth resistor (R5) is connected with the grids of the tenth transistor (M10) and the eleventh transistor (M11) which are directly connected and then used as the input end of the intermediate frequency positive signal (IF +) of the intermediate frequency amplifying circuit, and the other end is connected with the drains of the tenth transistor (M10) and the eleventh transistor (M11) which are used as the positive output end of the intermediate frequency amplifying circuit and connected with the mixer circuit based on the gain multiplication technology; the negative-end push-pull amplifier of the intermediate frequency differential signal consists of a twelfth transistor (M12), a thirteenth transistor (M13) and a sixth resistor (R6), wherein the grids of the twelfth transistor (M12) and the thirteenth transistor (M13) are connected with the grid, the drain and the drain are connected, the source of the twelfth transistor (M12) is grounded, the source of the thirteenth transistor (M13) is connected with a power supply (VCC), one end of the sixth resistor (R6) is connected with the grid of the twelfth transistor (M12) and the grid of the thirteenth transistor (M13) and then directly connected to serve as the input end of an intermediate frequency negative signal (IF-) of the intermediate frequency amplifying circuit, and the other end of the sixth resistor (R6) is connected with the drains of the twelfth transistor (M12) and the thirteenth transistor (M13), namely, serves as the negative output end of the intermediate frequency amplifying circuit and is connected with a mixing circuit based on a gain multiplication technology.
5. The active balun-integrated broadband miniaturized mixer according to claim 1, wherein the radio frequency and local oscillator matching circuit is composed of a radio frequency output matching circuit and a local oscillator input matching circuit, the radio frequency output matching circuit is composed of a first transformer balun (XMFR 1) and a fifth capacitor (C5), the fifth capacitor (C5) is connected in parallel with two ends of a primary coil of the first transformer balun (XMFR 1), one end of the primary coil of the first transformer balun (XMFR 1) is connected with a radio frequency signal (RF), and the other end is connected with a radio frequency signal negative signal (RF-) of the mixer circuit, one end of a secondary coil of the first transformer balun (XMFR 1) is connected with a positive radio frequency signal (RF +) of the mixer circuit, and the other end is connected with a negative radio frequency signal (RF-) of the mixer circuit, and a center tap is connected with a power supply (VCC).
6. The active balun-integrated wideband miniaturized mixer of claim 5, wherein the local oscillator input matching circuit is composed of a second transformer balun (XMFR 2) and a sixth capacitor (C6), the sixth capacitor (C6) is connected in parallel across the primary winding of the second transformer balun (XMFR 2), one end of the primary winding of the second transformer balun (XMFR 2) is connected to the local oscillator signal (LO) and the other end is connected to ground; one end of a secondary coil of the second transformer balun (XMFR 2) is connected with a local oscillator positive signal (LO +) of the frequency mixing circuit, the other end of the secondary coil is connected with a local oscillator negative signal (LO-) of the frequency mixing circuit, and a center tap is connected with the ground; the structure not only realizes broadband input matching and conversion of single-ended signals and differential signals, but also provides better amplitude and phase balance.
7. The wideband miniaturized mixer of claim 6, wherein the local oscillator input matching circuit, the second transformer balun (XMFR 2) secondary winding center tap via a seventh resistor (R7) is connected to a third bias voltage (VB 3) and directly provides DC bias to the gates of the fourth transistor (M4), the fifth transistor (M5), the sixth transistor (M6) and the seventh transistor (M7) through the coupling inductors, and the third bias voltage (VB 3) selects the DC voltage at which the performance of the mixer circuit is optimal under the amplitude of the corresponding input signal.
8. The active balun-integrated broadband miniaturized mixer of claim 5 or 6, wherein the first transformer balun (XFMR 1) and the second transformer balun (XFMR 2) are both implemented by metal wire coupling of an integrated circuit process, and monolithic integration is implemented by the integrated circuit process, and the first transformer balun (XFMR 1) and the second transformer balun (XFMR 2) are both a mutual coupling structure of the same layer of metal or a mutual coupling structure of multiple layers of metal.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118018044A (en) * | 2024-04-09 | 2024-05-10 | 成都信息工程大学 | Ultra-wideband emission front-end system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118018044A (en) * | 2024-04-09 | 2024-05-10 | 成都信息工程大学 | Ultra-wideband emission front-end system |
| CN118018044B (en) * | 2024-04-09 | 2024-06-04 | 成都信息工程大学 | Ultra-wideband emission front-end system |
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