CN1103985A - 测试静态ram的方法和装置 - Google Patents
测试静态ram的方法和装置 Download PDFInfo
- Publication number
- CN1103985A CN1103985A CN94115625A CN94115625A CN1103985A CN 1103985 A CN1103985 A CN 1103985A CN 94115625 A CN94115625 A CN 94115625A CN 94115625 A CN94115625 A CN 94115625A CN 1103985 A CN1103985 A CN 1103985A
- Authority
- CN
- China
- Prior art keywords
- word line
- voltage
- array
- coupled
- supply voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50016—Marginal testing, e.g. race, voltage or current testing of retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5004—Voltage
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11619293A | 1993-09-03 | 1993-09-03 | |
US116192 | 1993-09-03 | ||
US116,192 | 1993-09-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1103985A true CN1103985A (zh) | 1995-06-21 |
CN1042178C CN1042178C (zh) | 1999-02-17 |
Family
ID=22365831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN94115625A Expired - Lifetime CN1042178C (zh) | 1993-09-03 | 1994-09-01 | 测试静态ram的方法和装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5687178A (zh) |
EP (1) | EP0642134B1 (zh) |
JP (1) | JPH0785698A (zh) |
KR (1) | KR100334184B1 (zh) |
CN (1) | CN1042178C (zh) |
DE (1) | DE69429397T2 (zh) |
SG (1) | SG82537A1 (zh) |
TW (1) | TW243531B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1975926B (zh) * | 2005-11-29 | 2010-05-26 | 国际商业机器公司 | 静态随机存取存储器和静态随机存取存储器电压控制方法 |
CN111105836A (zh) * | 2018-10-25 | 2020-05-05 | 爱思开海力士有限公司 | 存储装置及其操作方法 |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2297173A (en) * | 1995-01-18 | 1996-07-24 | Plessey Semiconductors Ltd | Static random access memories |
US5633828A (en) * | 1995-08-24 | 1997-05-27 | Sgs-Thomson Microelectronics, Inc. | Circuitry and methodology to test single bit failures of integrated circuit memory devices |
JP2818571B2 (ja) * | 1996-02-21 | 1998-10-30 | 山形日本電気株式会社 | 半導体記憶装置 |
EP0798726B1 (en) * | 1996-03-29 | 2004-01-07 | STMicroelectronics S.r.l. | Programming and reading management architecture for memory devices, particularly for test purposes |
US5930185A (en) * | 1997-09-26 | 1999-07-27 | Advanced Micro Devices, Inc. | Data retention test for static memory cell |
US5877993A (en) | 1997-05-13 | 1999-03-02 | Micron Technology, Inc. | Memory circuit voltage regulator |
US5956280A (en) * | 1998-03-02 | 1999-09-21 | Tanisys Technology, Inc. | Contact test method and system for memory testers |
JP2001195893A (ja) | 2000-01-13 | 2001-07-19 | Mitsubishi Electric Corp | スタティック型半導体記憶装置 |
KR100454118B1 (ko) * | 2001-10-23 | 2004-10-26 | 삼성전자주식회사 | 반도체 메모리 장치 및 그것의 테스트 방법 |
US7032193B1 (en) * | 2002-09-30 | 2006-04-18 | Advanced Micro Devices, Inc. | Differentially mis-aligned contacts in flash arrays to calibrate failure modes |
JP2007505439A (ja) * | 2003-05-22 | 2007-03-08 | コニンクリユケ フィリップス エレクトロニクス エヌ.ブイ. | Ramアドレス・デコーダの抵抗オープン故障のテスティング |
KR100518579B1 (ko) * | 2003-06-05 | 2005-10-04 | 삼성전자주식회사 | 반도체 장치 및 그 테스트 방법 |
JP2004362695A (ja) * | 2003-06-05 | 2004-12-24 | Renesas Technology Corp | 半導体記憶装置 |
US7196925B1 (en) * | 2004-08-26 | 2007-03-27 | Cypress Semiconductor Corporation | Memory array with current limiting device for preventing particle induced latch-up |
JP4256327B2 (ja) * | 2004-11-05 | 2009-04-22 | 株式会社東芝 | スタティックランダムアクセスメモリ、および擬似スタティックノイズマージンの計測方法 |
US7085175B2 (en) * | 2004-11-18 | 2006-08-01 | Freescale Semiconductor, Inc. | Word line driver circuit for a static random access memory and method therefor |
US7385841B2 (en) * | 2005-08-15 | 2008-06-10 | Texas Instruments Incorporated | Static random access memory device having a voltage-controlled word line driver for retain till accessed mode and method of operating the same |
US7304895B2 (en) * | 2005-09-13 | 2007-12-04 | International Business Machines Corporation | Bitline variable methods and circuits for evaluating static memory cell dynamic stability |
US7301835B2 (en) * | 2005-09-13 | 2007-11-27 | International Business Machines Corporation | Internally asymmetric methods and circuits for evaluating static memory cell dynamic stability |
US7376001B2 (en) * | 2005-10-13 | 2008-05-20 | International Business Machines Corporation | Row circuit ring oscillator method for evaluating memory cell performance |
US7673195B2 (en) * | 2007-10-03 | 2010-03-02 | International Business Machines Corporation | Circuits and methods for characterizing device variation in electronic memory circuits |
US7755960B2 (en) * | 2007-12-17 | 2010-07-13 | Stmicroelectronics Sa | Memory including a performance test circuit |
US8339152B2 (en) | 2010-03-30 | 2012-12-25 | Freescale Semiconductor, Inc. | Test structure activated by probe needle |
JP5691243B2 (ja) * | 2010-05-25 | 2015-04-01 | 凸版印刷株式会社 | プロセス評価用半導体集積回路 |
US8705268B2 (en) * | 2011-12-27 | 2014-04-22 | Broadcom Corporation | Quantifying the read and write margins of memory bit cells |
US9418759B2 (en) * | 2014-05-06 | 2016-08-16 | Intel IP Corporation | Assist circuits for SRAM testing |
US9704600B1 (en) * | 2016-02-18 | 2017-07-11 | Global Foundries Inc. | Method, apparatus, and system for global healing of write-limited die through bias temperature instability |
JP6756866B1 (ja) * | 2019-03-19 | 2020-09-16 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置の試験装置および試験方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT375299B (de) * | 1978-12-06 | 1984-07-25 | Polymatt Kunststoffe | Verfahren zur herstellung eines endlosen strangprofils aus duroplastischem kunststoff |
EP0059184A1 (en) * | 1980-09-08 | 1982-09-08 | Mostek Corporation | Go/no go margin test circuit for semiconductor memory |
US4418403A (en) * | 1981-02-02 | 1983-11-29 | Mostek Corporation | Semiconductor memory cell margin test circuit |
US4468759A (en) * | 1982-05-03 | 1984-08-28 | Intel Corporation | Testing method and apparatus for dram |
US5155701A (en) * | 1985-02-08 | 1992-10-13 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of testing the same |
US4680762A (en) * | 1985-10-17 | 1987-07-14 | Inmos Corporation | Method and apparatus for locating soft cells in a ram |
US4685086A (en) * | 1985-11-14 | 1987-08-04 | Thomson Components-Mostek Corp. | Memory cell leakage detection circuit |
US5172335A (en) * | 1987-02-23 | 1992-12-15 | Hitachi, Ltd. | Semiconductor memory with divided bit load and data bus lines |
US5034923A (en) * | 1987-09-10 | 1991-07-23 | Motorola, Inc. | Static RAM with soft defect detection |
US4809231A (en) * | 1987-11-12 | 1989-02-28 | Motorola, Inc. | Method and apparatus for post-packaging testing of one-time programmable memories |
US4903265A (en) * | 1987-11-12 | 1990-02-20 | Motorola, Inc. | Method and apparatus for post-packaging testing of one-time programmable memories |
US5159571A (en) * | 1987-12-29 | 1992-10-27 | Hitachi, Ltd. | Semiconductor memory with a circuit for testing characteristics of flip-flops including selectively applied power supply voltages |
JPH0346193A (ja) * | 1989-07-13 | 1991-02-27 | Mitsubishi Electric Corp | スタティック型半導体記憶装置 |
US5181205A (en) * | 1990-04-10 | 1993-01-19 | National Semiconductor Corporation | Short circuit detector circuit for memory arrays |
JPH0482085A (ja) * | 1990-07-25 | 1992-03-16 | Toshiba Corp | スタティック型メモリセル |
US5097206A (en) * | 1990-10-05 | 1992-03-17 | Hewlett-Packard Company | Built-in test circuit for static CMOS circuits |
JP3076606B2 (ja) * | 1990-12-14 | 2000-08-14 | 富士通株式会社 | 半導体記憶装置およびその検査方法 |
JPH0756759B2 (ja) * | 1990-12-27 | 1995-06-14 | 株式会社東芝 | スタティック型半導体記憶装置 |
US5255230A (en) * | 1991-12-31 | 1993-10-19 | Intel Corporation | Method and apparatus for testing the continuity of static random access memory cells |
US5313430A (en) * | 1992-12-09 | 1994-05-17 | International Business Machines Corporation | Power down circuit for testing memory arrays |
-
1994
- 1994-07-06 TW TW083106187A patent/TW243531B/zh not_active IP Right Cessation
- 1994-07-14 EP EP94110955A patent/EP0642134B1/en not_active Expired - Lifetime
- 1994-07-14 SG SG9603672A patent/SG82537A1/en unknown
- 1994-07-14 DE DE69429397T patent/DE69429397T2/de not_active Expired - Fee Related
- 1994-08-04 KR KR1019940019241A patent/KR100334184B1/ko not_active IP Right Cessation
- 1994-08-31 JP JP6228995A patent/JPH0785698A/ja active Pending
- 1994-09-01 CN CN94115625A patent/CN1042178C/zh not_active Expired - Lifetime
-
1996
- 1996-03-25 US US08/621,370 patent/US5687178A/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1975926B (zh) * | 2005-11-29 | 2010-05-26 | 国际商业机器公司 | 静态随机存取存储器和静态随机存取存储器电压控制方法 |
CN111105836A (zh) * | 2018-10-25 | 2020-05-05 | 爱思开海力士有限公司 | 存储装置及其操作方法 |
CN111105836B (zh) * | 2018-10-25 | 2023-05-05 | 爱思开海力士有限公司 | 存储装置及其操作方法 |
Also Published As
Publication number | Publication date |
---|---|
TW243531B (zh) | 1995-03-21 |
JPH0785698A (ja) | 1995-03-31 |
KR100334184B1 (ko) | 2002-09-05 |
EP0642134A2 (en) | 1995-03-08 |
EP0642134B1 (en) | 2001-12-12 |
US5687178A (en) | 1997-11-11 |
KR950009740A (ko) | 1995-04-24 |
CN1042178C (zh) | 1999-02-17 |
SG82537A1 (en) | 2001-08-21 |
EP0642134A3 (en) | 1996-08-07 |
DE69429397T2 (de) | 2002-08-14 |
DE69429397D1 (de) | 2002-01-24 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FREEDOM SEMICONDUCTORS CO. Free format text: FORMER OWNER: MOTOROLA, INC. Effective date: 20040813 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20040813 Address after: Texas in the United States Patentee after: FreeScale Semiconductor Address before: Illinois Instrunment Patentee before: Motorola, Inc. |
|
C56 | Change in the name or address of the patentee |
Owner name: FISICAL SEMICONDUCTOR INC. Free format text: FORMER NAME: FREEDOM SEMICONDUCTOR CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Texas in the United States Patentee after: FREESCALE SEMICONDUCTOR, Inc. Address before: Texas in the United States Patentee before: FreeScale Semiconductor |
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C17 | Cessation of patent right | ||
CX01 | Expiry of patent term |
Expiration termination date: 20140901 Granted publication date: 19990217 |