CN110391139B - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

Info

Publication number
CN110391139B
CN110391139B CN201910288187.2A CN201910288187A CN110391139B CN 110391139 B CN110391139 B CN 110391139B CN 201910288187 A CN201910288187 A CN 201910288187A CN 110391139 B CN110391139 B CN 110391139B
Authority
CN
China
Prior art keywords
wafer
dividing
line
sheet
polyester
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910288187.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN110391139A (zh
Inventor
荒川太朗
冈村卓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN110391139A publication Critical patent/CN110391139A/zh
Application granted granted Critical
Publication of CN110391139B publication Critical patent/CN110391139B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201910288187.2A 2018-04-20 2019-04-11 晶片的加工方法 Active CN110391139B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018081726A JP7154809B2 (ja) 2018-04-20 2018-04-20 ウエーハの加工方法
JP2018-081726 2018-04-20

Publications (2)

Publication Number Publication Date
CN110391139A CN110391139A (zh) 2019-10-29
CN110391139B true CN110391139B (zh) 2024-03-15

Family

ID=68284312

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910288187.2A Active CN110391139B (zh) 2018-04-20 2019-04-11 晶片的加工方法

Country Status (4)

Country Link
JP (1) JP7154809B2 (ja)
KR (1) KR102681932B1 (ja)
CN (1) CN110391139B (ja)
TW (1) TWI802682B (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7282452B2 (ja) 2019-02-15 2023-05-29 株式会社ディスコ ウェーハの加工方法
JP7282453B2 (ja) 2019-02-15 2023-05-29 株式会社ディスコ ウェーハの加工方法
JP7282455B2 (ja) 2019-03-05 2023-05-29 株式会社ディスコ ウェーハの加工方法
JP7277019B2 (ja) 2019-03-05 2023-05-18 株式会社ディスコ ウェーハの加工方法
JP2020174100A (ja) 2019-04-10 2020-10-22 株式会社ディスコ ウェーハの加工方法
JP7313767B2 (ja) 2019-04-10 2023-07-25 株式会社ディスコ ウェーハの加工方法
JP7330615B2 (ja) 2019-05-10 2023-08-22 株式会社ディスコ ウェーハの加工方法
JP7330616B2 (ja) 2019-05-10 2023-08-22 株式会社ディスコ ウェーハの加工方法
JP7286247B2 (ja) 2019-06-07 2023-06-05 株式会社ディスコ ウェーハの加工方法
JP7286245B2 (ja) 2019-06-07 2023-06-05 株式会社ディスコ ウェーハの加工方法
JP7305268B2 (ja) 2019-08-07 2023-07-10 株式会社ディスコ ウェーハの加工方法
JP7345973B2 (ja) 2019-08-07 2023-09-19 株式会社ディスコ ウェーハの加工方法
JP7341607B2 (ja) 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP7341606B2 (ja) 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP7383338B2 (ja) 2019-10-10 2023-11-20 株式会社ディスコ ウェーハの加工方法
JP2021064627A (ja) 2019-10-10 2021-04-22 株式会社ディスコ ウェーハの加工方法
JP7301480B2 (ja) 2019-10-17 2023-07-03 株式会社ディスコ ウェーハの加工方法
JP7387228B2 (ja) 2019-10-17 2023-11-28 株式会社ディスコ ウェーハの加工方法
JP7430515B2 (ja) * 2019-11-06 2024-02-13 株式会社ディスコ ウエーハの処理方法
JP2021077735A (ja) * 2019-11-07 2021-05-20 株式会社ディスコ ウェーハの加工方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165636A (ja) * 2005-12-14 2007-06-28 Nippon Zeon Co Ltd 半導体素子の製造方法
CN104946153A (zh) * 2014-03-31 2015-09-30 日东电工株式会社 热固型芯片接合薄膜、切割/芯片接合薄膜及半导体装置的制造方法
CN106301270A (zh) * 2015-06-24 2017-01-04 株式会社迪思科 Saw器件的制造方法
CN107093578A (zh) * 2016-02-18 2017-08-25 株式会社迪思科 晶片的加工方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153352A (ja) * 1982-03-09 1983-09-12 Toshiba Corp 半導体素子の製造方法
JPS59152639A (ja) * 1983-02-21 1984-08-31 Nec Home Electronics Ltd 半導体ウエ−ハ仮固着方法
JPH10305420A (ja) 1997-03-04 1998-11-17 Ngk Insulators Ltd 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法
JP2005191297A (ja) * 2003-12-25 2005-07-14 Jsr Corp ダイシングフィルム及び半導体ウェハの切断方法
JP2011046581A (ja) 2009-08-28 2011-03-10 Seiko Instruments Inc 接合ガラスの切断方法、パッケージの製造方法、パッケージ、圧電振動子、発振器、電子機器及び電波時計
JP5801046B2 (ja) 2010-12-06 2015-10-28 株式会社ディスコ 板状物の加工方法
JP2014170845A (ja) * 2013-03-04 2014-09-18 Nitto Denko Corp 半導体装置の製造方法、シート状樹脂組成物、及び、ダイシングテープ一体型シート状樹脂組成物
JP6800167B2 (ja) * 2015-12-25 2020-12-16 古河電気工業株式会社 半導体加工用テープ
JP6741529B2 (ja) * 2016-09-09 2020-08-19 株式会社ディスコ チップ間隔維持方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165636A (ja) * 2005-12-14 2007-06-28 Nippon Zeon Co Ltd 半導体素子の製造方法
CN104946153A (zh) * 2014-03-31 2015-09-30 日东电工株式会社 热固型芯片接合薄膜、切割/芯片接合薄膜及半导体装置的制造方法
CN106301270A (zh) * 2015-06-24 2017-01-04 株式会社迪思科 Saw器件的制造方法
CN107093578A (zh) * 2016-02-18 2017-08-25 株式会社迪思科 晶片的加工方法

Also Published As

Publication number Publication date
KR102681932B1 (ko) 2024-07-04
TWI802682B (zh) 2023-05-21
JP2019192718A (ja) 2019-10-31
TW201944476A (zh) 2019-11-16
JP7154809B2 (ja) 2022-10-18
CN110391139A (zh) 2019-10-29
KR20190122552A (ko) 2019-10-30

Similar Documents

Publication Publication Date Title
CN110391139B (zh) 晶片的加工方法
JP2019192717A (ja) ウエーハの加工方法
JP4777761B2 (ja) ウエーハの分割方法
KR20140126247A (ko) 웨이퍼 가공 방법
JP7139048B2 (ja) ウェーハの加工方法
JP4402974B2 (ja) ウエーハの分割方法
JP7330616B2 (ja) ウェーハの加工方法
JP7139040B2 (ja) ウェーハの加工方法
JP2005223283A (ja) ウエーハの分割方法
JP7305268B2 (ja) ウェーハの加工方法
JP7277019B2 (ja) ウェーハの加工方法
CN110429062B (zh) 晶片的加工方法
JP7383338B2 (ja) ウェーハの加工方法
JP7286247B2 (ja) ウェーハの加工方法
JP7313767B2 (ja) ウェーハの加工方法
JP2021068723A (ja) ウェーハの加工方法
JP2005222986A (ja) ウエーハの分割方法
JP7305270B2 (ja) ウェーハの加工方法
JP7305269B2 (ja) ウェーハの加工方法
JP7277021B2 (ja) ウェーハの加工方法
JP7277020B2 (ja) ウェーハの加工方法
JP4402971B2 (ja) ウエーハの分割方法
JP7305259B2 (ja) ウェーハの加工方法
JP7305261B2 (ja) ウェーハの加工方法
JP7134562B2 (ja) ウェーハの加工方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant