CN110379787A - Power semiconductor modular structure - Google Patents
Power semiconductor modular structure Download PDFInfo
- Publication number
- CN110379787A CN110379787A CN201910659270.6A CN201910659270A CN110379787A CN 110379787 A CN110379787 A CN 110379787A CN 201910659270 A CN201910659270 A CN 201910659270A CN 110379787 A CN110379787 A CN 110379787A
- Authority
- CN
- China
- Prior art keywords
- phase
- change material
- metalwork
- semiconductor chip
- modular structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention proposes a kind of power semiconductor modular structure, the power semiconductor modular structure includes insulating substrate, semiconductor chip, metalwork and phase-change material；Phase-change material and semiconductor chip can carry out heat exchange by metalwork, and due to the heat absorption and exothermic effects of phase-change material, in circuit the start-up period, the temperature rise of semiconductor chip and rate of temperature fall all can be retarded；The method have the benefit that: propose a kind of power semiconductor modular structure, the program can effectively reduce in circuit the start-up period, the temperature difference of semiconductor chip.
Description
Technical field
The present invention relates to a kind of technology of regulation power semiconductor modular operational difference more particularly to a kind of power semiconductors
Modular structure.
Background technique
The structure of power semiconductor modular common in the art is as shown in Figure 1, 2, and power semiconductor modular is usually made
For in peripheral circuit a device, play a part of control voltage and current.When circuit works, in power semiconductor modular half
Conductor chip can generate heat, and temperature is caused to rise, when circuit stops working, semiconductor chip fever stop, temperature again can gradually under
Drop；In circuit the start-up period, the difference T of the maximum temperature Tjmax and minimum temperature Tjmin of semiconductor chip will have a direct impact on function
The service life of rate semiconductor module, the temperature difference is bigger, and the service life is shorter, and the temperature difference smaller service life is longer, in order to extend power semiconductor mould
The service life of block, it is necessary to reduce the numerical value of T by corresponding means.
Summary of the invention
For the problems in background technique, the invention proposes a kind of power semiconductor modular structure, innovation is: institute
Stating power semiconductor modular structure includes insulating substrate, semiconductor chip, metalwork and phase-change material；
The insulating substrate is made of dielectric panel, metal layer on back and multiple front metal layers；The metal layer on back is set
It sets at the back side of dielectric panel；The front of dielectric panel is arranged in the front metal layer；The front of dielectric panel is set
It is equipped with and the matched bonding pad of semiconductor chip；
The back side of the semiconductor chip is connect by the first layer with bonding pad；The front of semiconductor chip is provided with pad,
The edge of pad and the edge of semiconductor chip are spaced；
The bottom of the metalwork is connect by the second layer with the pad；Cavity, the top of metalwork are provided in metalwork
Portion is provided with two or more through-holes, and the cavity is connected to by through-hole with external environment；
The value range of the phase transformation temperature points of the phase-change material is 50 ~ 200 DEG C；The cavity of metalwork is arranged in phase-change material
It is interior.When production, heating makes phase-change material liquefy, and is injected the phase-change material of liquid in cavity by the through-hole；The phase transformation
The phase transformation temperature points of material are located between the maximum junction temperature and minimum junction temperature of semiconductor chip.
The principle of the present invention is: based on the prior art it is found that phase-change material has determining phase transformation temperature points, working as phase-change material
Temperatures span phase transformation temperature points when, phase-change material will be undergone phase transition: when phase-change material from be lower than phase transformation temperature points phase transformation
When turning to the phase higher than phase transformation temperature points, phase-change material can absorb heat, when phase-change material from the phase transformation higher than phase transformation temperature points
When turning to the phase lower than phase transformation temperature points, phase-change material can discharge heat；Specific to the present invention, due to being filled with phase in metalwork
Become material, heat exchange can be carried out by metalwork between phase-change material and semiconductor chip, when semiconductor chip adstante febre, partly
The heat that conductor chip issues can be transmitted on phase-change material and largely be absorbed by phase-change material, make the temperature rise of semiconductor chip
Rate is retarded, and when semiconductor chip stops adstante febre, the heat on phase-change material understands reverse conduction to semiconductor chip again
On, keep the rate of temperature fall of semiconductor chip retarded, since the phase transformation temperature points of phase-change material are located at semiconductor chip most
Between high junction temperature and minimum junction temperature, in circuit the start-up period, the heat absorption and exothermic effects of phase-change material can make the numerical value of T
Effectively reduced, so that the service life of power semiconductor modular be made to be extended.
Preferably, the phase-change material is solid-solid phase transition material.
Preferably, the volume that the phase-change material occupies in the cavity is the 60% ~ 95% of cavity volume.
Preferably, the metalwork is made of copper or molybdenum.
The method have the benefit that: a kind of power semiconductor modular structure is proposed, the program can effectively reduce
In circuit the start-up period, the temperature difference of semiconductor chip.
Detailed description of the invention
The top view of Fig. 1, the prior art；
The side view of Fig. 2, the prior art；
Fig. 3, structural schematic diagram one of the invention；
Fig. 4, structural schematic diagram two of the invention；
Title corresponding to each label is respectively as follows: semiconductor chip 1, the first layer 2, the second layer 3, metalwork 4, phase in figure
Become material 5, plate-like extending portion 6, third layer 7, front metal layer 8, lead 9, pad 10, dielectric panel 11, back metal
Layer 12.
A kind of power semiconductor modular structure, it is characterised in that: the power semiconductor modular structure include insulating substrate,
Semiconductor chip 1, metalwork 4 and phase-change material 5；
The insulating substrate is made of dielectric panel 11, metal layer on back 12 and multiple front metal layers 8；The back metal
The back side of dielectric panel 11 is arranged in layer 12；The front of dielectric panel 11 is arranged in the front metal layer 8；Insulating materials
The front of plate 11 is provided with and the matched bonding pad of semiconductor chip 1；
The back side of the semiconductor chip 1 is connect by the first layer 2 with bonding pad；The front of semiconductor chip 1 is provided with weldering
The edge of disk 10, the edge and semiconductor chip 1 of pad 10 is spaced；
The bottom of the metalwork 4 is connect by the second layer 3 with the pad 10；Cavity, metalwork are provided in metalwork 4
4 top is provided with two or more through-holes, and the cavity is connected to by through-hole with external environment；
The value range of the phase transformation temperature points of the phase-change material 5 is 50 ~ 200 DEG C；The sky of metalwork 4 is arranged in phase-change material 5
It is intracavitary；The phase transformation temperature points of the phase-change material 5 are located between the maximum junction temperature and minimum junction temperature of semiconductor chip 1.
Further, the phase-change material 5 is solid-solid phase transition material.
Further, the volume that the phase-change material 5 occupies in the cavity is the 60% ~ 95% of cavity volume.
Further, the metalwork 4 is made of copper or molybdenum.
It will be apparent to those skilled in the art that being there are also several leads 9 for electrical connection on power semiconductor modular
The structural stability of the lead 9 on semiconductor chip 1 is improved, referring to fig. 4, plate extension can be set on the side wall of metalwork 4
Portion 6 substitutes respective lead 9, and the outer end of plate-like extending portion 6 connected by the front metal layer 8 on third layer 7 and insulating substrate
It connects.
Those skilled in the art in carrying out the present invention, can make device of the invention by following preferred fabrication mode
Part:
1) make insulating substrate, and on insulating substrate front metal layer 8 and metal layer on back 12 be patterned processing；
2) at bonding pad semiconductor chip 1 being welded on insulating substrate with solder (solder be formed the first layer 2)；
3) it is prefabricated component by metalwork 4(metalwork 4 with solder (solder forms the second layer 3)) it is welded on semiconductor chip 1
Pad 10 on；
It 4), will be in the cavity of the phase-change material injection metalwork 4 of liquid by the through-hole on metalwork 4；
5) bonding of lead 9 realizes electric interconnection (as used 6 scheme of plate-like extending portion, in weld metal pieces 4 and semiconductor chip 1
When, it is synchronous that the outer end of plate-like extending portion 6 is welded on corresponding site).
Technique involved by preceding method is all common technology in the prior art, when it is implemented, art technology
Personnel both can implement the present invention by preceding method, can also be used on a selective basis in other existing techniques according to physical condition.
Claims (4)
1. a kind of power semiconductor modular structure, it is characterised in that: the power semiconductor modular structure includes insulating substrate, half
Conductor chip, metalwork and phase-change material；
The insulating substrate is made of dielectric panel, metal layer on back and multiple front metal layers；The metal layer on back is set
It sets at the back side of dielectric panel；The front of dielectric panel is arranged in the front metal layer；The front of dielectric panel is set
It is equipped with and the matched bonding pad of semiconductor chip；
The back side of the semiconductor chip is connect by the first layer with bonding pad；The front of semiconductor chip is provided with pad,
The edge of pad and the edge of semiconductor chip are spaced；
The bottom of the metalwork is connect by the second layer with the pad；Cavity, the top of metalwork are provided in metalwork
Portion is provided with two or more through-holes, and the cavity is connected to by through-hole with external environment；
The value range of the phase transformation temperature points of the phase-change material is 50 ~ 200 DEG C；The cavity of metalwork is arranged in phase-change material
It is interior；The phase transformation temperature points of the phase-change material are located between the maximum junction temperature and minimum junction temperature of semiconductor chip.
2. power semiconductor modular structure according to claim 1, it is characterised in that: the phase-change material is solid-solid phase
Become material.
3. power semiconductor modular structure according to claim 1 or 2, it is characterised in that: the phase-change material is described
The volume occupied in cavity is the 60% ~ 95% of cavity volume.
4. power semiconductor modular structure according to claim 3, it is characterised in that: the metalwork uses copper or molybdenum system
Make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910659270.6A CN110379787A (en) | 2019-07-22 | 2019-07-22 | Power semiconductor modular structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910659270.6A CN110379787A (en) | 2019-07-22 | 2019-07-22 | Power semiconductor modular structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110379787A true CN110379787A (en) | 2019-10-25 |
Family
ID=68254512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910659270.6A Pending CN110379787A (en) | 2019-07-22 | 2019-07-22 | Power semiconductor modular structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110379787A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112968007A (en) * | 2021-02-03 | 2021-06-15 | 重庆大学 | Power semiconductor structure and circuit breaker transfer branch assembly |
| FR3112241A1 (en) * | 2020-07-02 | 2022-01-07 | Safran | Cooling device implemented in a power electronics application |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080266801A1 (en) * | 2007-04-30 | 2008-10-30 | Rockwell Automation Technologies, Inc. | Phase change cooled power electronic module |
| CN102278726A (en) * | 2010-06-12 | 2011-12-14 | 艾迪光电（杭州）有限公司 | LED lamp heat-radiating device |
| JP2013197560A (en) * | 2012-03-23 | 2013-09-30 | Hitachi Ltd | Power semiconductor module |
| CN103997878A (en) * | 2014-05-16 | 2014-08-20 | 中国电子科技集团公司第二十九研究所 | Phase change heat dissipation device and manufacturing method thereof |
| CN104241513A (en) * | 2014-09-15 | 2014-12-24 | 西安交通大学 | High-power LED multi-hole phase-changing heat sink structure |
| CN104244677A (en) * | 2014-08-21 | 2014-12-24 | 上海无线电设备研究所 | Phase change temperature control device of electronic heating assembly and manufacturing method thereof |
| CN104538372A (en) * | 2014-12-29 | 2015-04-22 | 华进半导体封装先导技术研发中心有限公司 | Radiating type packaging structure, manufacturing method thereof and radiating type packaging substrate |
| CN105246299A (en) * | 2015-10-27 | 2016-01-13 | 航天恒星科技有限公司 | Heat radiation energy storage device |
| US20170103936A1 (en) * | 2015-10-09 | 2017-04-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dbc structure using a support incorporating a phase change material |
| CN107172868A (en) * | 2017-07-17 | 2017-09-15 | 河北建筑工程学院 | Housing of electronic equipment and preparation method thereof |
| CN207766303U (en) * | 2018-01-12 | 2018-08-24 | 东莞市典澜五金科技有限公司 | A kind of cell phone rear cover with high efficiency and heat radiation |
| CN108682664A (en) * | 2018-05-30 | 2018-10-19 | 重庆大学 | A kind of power module and preparation method thereof based on phase-change material |
-
2019
- 2019-07-22 CN CN201910659270.6A patent/CN110379787A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080266801A1 (en) * | 2007-04-30 | 2008-10-30 | Rockwell Automation Technologies, Inc. | Phase change cooled power electronic module |
| CN102278726A (en) * | 2010-06-12 | 2011-12-14 | 艾迪光电（杭州）有限公司 | LED lamp heat-radiating device |
| JP2013197560A (en) * | 2012-03-23 | 2013-09-30 | Hitachi Ltd | Power semiconductor module |
| CN103997878A (en) * | 2014-05-16 | 2014-08-20 | 中国电子科技集团公司第二十九研究所 | Phase change heat dissipation device and manufacturing method thereof |
| CN104244677A (en) * | 2014-08-21 | 2014-12-24 | 上海无线电设备研究所 | Phase change temperature control device of electronic heating assembly and manufacturing method thereof |
| CN104241513A (en) * | 2014-09-15 | 2014-12-24 | 西安交通大学 | High-power LED multi-hole phase-changing heat sink structure |
| CN104538372A (en) * | 2014-12-29 | 2015-04-22 | 华进半导体封装先导技术研发中心有限公司 | Radiating type packaging structure, manufacturing method thereof and radiating type packaging substrate |
| US20170103936A1 (en) * | 2015-10-09 | 2017-04-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dbc structure using a support incorporating a phase change material |
| CN105246299A (en) * | 2015-10-27 | 2016-01-13 | 航天恒星科技有限公司 | Heat radiation energy storage device |
| CN107172868A (en) * | 2017-07-17 | 2017-09-15 | 河北建筑工程学院 | Housing of electronic equipment and preparation method thereof |
| CN207766303U (en) * | 2018-01-12 | 2018-08-24 | 东莞市典澜五金科技有限公司 | A kind of cell phone rear cover with high efficiency and heat radiation |
| CN108682664A (en) * | 2018-05-30 | 2018-10-19 | 重庆大学 | A kind of power module and preparation method thereof based on phase-change material |
Non-Patent Citations (2)
| Title |
|---|
| IBRAHIM MJALLAL, HUSSIEN FARHAT, MOHAMMAD HAMMOUD，EL.: ""Improving the Cooling Efficiency of Heat Sinks through the Use of Different Types of Phase Change Materials"", 《TECHNOLOGIES》 * |
| 赖艳华，吴涛，魏露露，董震，吕明新: ""基于相变材料的电子元件的散热性能"", 《化工学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3112241A1 (en) * | 2020-07-02 | 2022-01-07 | Safran | Cooling device implemented in a power electronics application |
| CN112968007A (en) * | 2021-02-03 | 2021-06-15 | 重庆大学 | Power semiconductor structure and circuit breaker transfer branch assembly |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11139278B2 (en) | Low parasitic inductance power module and double-faced heat-dissipation low parasitic inductance power module | |
| US6563211B2 (en) | Semiconductor device for controlling electricity | |
| CN104170086B (en) | The manufacture method of semiconductor device and semiconductor device | |
| US9129933B2 (en) | Semiconductor module and an inverter mounting said semiconductor module | |
| JP2010525588A (en) | Cooling body | |
| CN107195623A (en) | A kind of two-side radiation high-reliability power module | |
| CN104347553A (en) | Trenching resistance welding type IGBT module base plate | |
| JP5895220B2 (en) | Manufacturing method of semiconductor device | |
| CN110379787A (en) | Power semiconductor modular structure | |
| JP6149938B2 (en) | Semiconductor module | |
| Solomon et al. | Highly integrated low-inductive power switches using double-etched substrates with through-hole viases | |
| CN105161467A (en) | Power module for electric automobile | |
| CN103725261B (en) | A kind of Ternary liquid metal heat interface material with two melting point character | |
| CN207165543U (en) | A kind of low stray inductance two-side radiation power model | |
| CN103794580B (en) | Insulating interconnected heat dissipation plate and power module | |
| JP3889562B2 (en) | Semiconductor device | |
| CN106856180A (en) | A kind of method for welding IGBT module | |
| CN107146775A (en) | A kind of low stray inductance two-side radiation power model | |
| CN207165564U (en) | A kind of two-side radiation high-reliability power module | |
| Chen et al. | 3.3 kV Low-Inductance Full SiC Power Module | |
| CN107768340B (en) | Ceramic lining plate of power module | |
| CN206194730U (en) | Power module that chip upper surface flushed | |
| Bikinga et al. | TAPIR (compacT and modulAr Power modules with IntegRated cooling) Technology: Goals and Challenges | |
| Solomon et al. | Modular power converter integration based on non-conventional power switch assembly and interconnects | |
| Wang et al. | Thermal performance investigation of three-dimensional structure unit in double-sided cooling IGBT module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191025 |