CN110379787A - 功率半导体模块结构 - Google Patents

功率半导体模块结构 Download PDF

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CN110379787A
CN110379787A CN201910659270.6A CN201910659270A CN110379787A CN 110379787 A CN110379787 A CN 110379787A CN 201910659270 A CN201910659270 A CN 201910659270A CN 110379787 A CN110379787 A CN 110379787A
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change material
metalwork
semiconductor chip
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蒋华平
冉立
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Chongqing University
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    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Abstract

本发明提出了一种功率半导体模块结构，所述功率半导体模块结构包括绝缘基板、半导体芯片、金属件和相变材料；相变材料和半导体芯片能通过金属件进行热交换，由于相变材料的吸热和放热作用，电路启停周期中，半导体芯片的温升和降温速率都会得到减缓；本发明的有益技术效果是：提出了一种功率半导体模块结构，该方案可有效降低电路启停周期中、半导体芯片的温差。

Description

功率半导体模块结构
技术领域
本发明涉及一种调控功率半导体模块工作温差的技术，尤其涉及一种功率半导体模块结构。
背景技术
现有技术中常见的功率半导体模块的结构如图1、2所示，功率半导体模块常常作为***电路中的一个器件、起控制电压和电流的作用。电路工作时，功率半导体模块中的半导体芯片会发热，导致温度上升，电路停止工作时，半导体芯片发热停止，温度又会逐渐下降；电路启停周期中，半导体芯片的最高温度Tjmax和最低温度Tjmin之差∆T会直接影响功率半导体模块的使用寿命，温差越大寿命越短，温差越小寿命越长，为了延长功率半导体模块的使用寿命，有必要通过相应手段缩减∆T的数值。
发明内容
针对背景技术中的问题，本发明提出了一种功率半导体模块结构，其创新在于：所述功率半导体模块结构包括绝缘基板、半导体芯片、金属件和相变材料；
所述绝缘基板由绝缘材料板、背面金属层和多个正面金属层组成；所述背面金属层设置在绝缘材料板的背面；所述正面金属层设置在绝缘材料板的正面；绝缘材料板的正面设置有与半导体芯片匹配的连接区；
所述半导体芯片的背面通过第一焊层与连接区连接；半导体芯片的正面设置有焊盘，焊盘的边沿与半导体芯片的边沿留有间隔；
所述金属件的底部通过第二焊层与所述焊盘连接；金属件内设置有空腔，金属件的顶部设置有两个或两个以上的通孔，通孔将所述空腔和外环境连通；
所述相变材料的相变温度点的取值范围为50~200℃；相变材料设置在金属件的空腔内。制作时，加热使相变材料液化，通过所述通孔将液态的相变材料注入空腔内；所述相变材料的相变温度点位于半导体芯片的最高结温和最低结温之间。
本发明的原理是：基于现有技术可知，相变材料有确定的相变温度点，当相变材料的温度跨越相变温度点时，相变材料就会发生相变：当相变材料从低于相变温度点的相变化为高于相变温度点的相时，相变材料会吸收热量，当相变材料从高于相变温度点的相变化为低于相变温度点的相时，相变材料会释放热量；具体到本发明，由于金属件内填充有相变材料，相变材料和半导体芯片之间就能通过金属件进行热交换，当半导体芯片发热时，半导体芯片发出的热量就能传导到相变材料上并被相变材料大量吸收，使半导体芯片的温升速率得到减缓，当半导体芯片停止发热时，相变材料上的热量又会反向传导到半导体芯片上，使半导体芯片的降温速率得到减缓，由于相变材料的相变温度点位于半导体芯片的最高结温和最低结温之间，电路启停周期中，相变材料的吸热和放热作用，就能使∆T的数值得到有效缩减，从而使功率半导体模块的使用寿命得到延长。
优选地，所述相变材料为固-固相变材料。
优选地，所述相变材料在所述空腔中占用的体积为空腔容积的60%~95%。
优选地，所述金属件采用铜或钼制作。
本发明的有益技术效果是：提出了一种功率半导体模块结构，该方案可有效降低电路启停周期中、半导体芯片的温差。
附图说明
图1、现有技术的俯视图；
图2、现有技术的侧视图；
图3、本发明的结构示意图一；
图4、本发明的结构示意图二；
图中各个标记所对应的名称分别为：半导体芯片1、第一焊层2、第二焊层3、金属件4、相变材料5、板状延伸部6、第三焊层7、正面金属层8、引线9、焊盘10、绝缘材料板11、背面金属层12。
一种功率半导体模块结构，其特征在于：所述功率半导体模块结构包括绝缘基板、半导体芯片1、金属件4和相变材料5；
所述绝缘基板由绝缘材料板11、背面金属层12和多个正面金属层8组成；所述背面金属层12设置在绝缘材料板11的背面；所述正面金属层8设置在绝缘材料板11的正面；绝缘材料板11的正面设置有与半导体芯片1匹配的连接区；
所述半导体芯片1的背面通过第一焊层2与连接区连接；半导体芯片1的正面设置有焊盘10，焊盘10的边沿与半导体芯片1的边沿留有间隔；
所述金属件4的底部通过第二焊层3与所述焊盘10连接；金属件4内设置有空腔，金属件4的顶部设置有两个或两个以上的通孔，通孔将所述空腔和外环境连通；
所述相变材料5的相变温度点的取值范围为50~200℃；相变材料5设置在金属件4的空腔内；所述相变材料5的相变温度点位于半导体芯片1的最高结温和最低结温之间。
进一步地，所述相变材料5为固-固相变材料。
进一步地，所述相变材料5在所述空腔中占用的体积为空腔容积的60%~95%。
进一步地，所述金属件4采用铜或钼制作。
本领域技术人员应该清楚，功率半导体模块上还有用于电气连接的若干引线9，为提高半导体芯片1上的引线9的结构稳定性，参见图4，可在金属件4的侧壁上设置板状延伸部6来替代相应引线9，板状延伸部6的外端通过第三焊层7与绝缘基板上的正面金属层8连接。
本领域技术人员在实施本发明时，可按如下的优选制作方式来制作本发明的器件：
1）制作绝缘基板，并对绝缘基板上的正面金属层8和背面金属层12进行图形化处理；
2）用焊料（焊料即形成第一焊层2）将半导体芯片1焊接在绝缘基板上的连接区处；
3）用焊料（焊料即形成第二焊层3）将金属件4（金属件4为预制件）焊接在半导体芯片1的焊盘10上；
4）通过金属件4上的通孔，将液态的相变材料注入金属件4的空腔内；
5）引线9键合实现电气互连(如采用板状延伸部6方案，在焊接金属件4和半导体芯片1时，同步将板状延伸部6的外端焊接在相应部位)。
前述方法所涉及到的工艺都是现有技术中的常见工艺，具体实施时，本领域技术人员既可按前述方法实施本发明，也可根据实际条件，在现有的其他工艺中择优选用。

Claims (4)

1.一种功率半导体模块结构，其特征在于：所述功率半导体模块结构包括绝缘基板、半导体芯片、金属件和相变材料；
所述绝缘基板由绝缘材料板、背面金属层和多个正面金属层组成；所述背面金属层设置在绝缘材料板的背面；所述正面金属层设置在绝缘材料板的正面；绝缘材料板的正面设置有与半导体芯片匹配的连接区；
所述半导体芯片的背面通过第一焊层与连接区连接；半导体芯片的正面设置有焊盘，焊盘的边沿与半导体芯片的边沿留有间隔；
所述金属件的底部通过第二焊层与所述焊盘连接；金属件内设置有空腔，金属件的顶部设置有两个或两个以上的通孔，通孔将所述空腔和外环境连通；
所述相变材料的相变温度点的取值范围为50~200℃；相变材料设置在金属件的空腔内；所述相变材料的相变温度点位于半导体芯片的最高结温和最低结温之间。
2.根据权利要求1所述的功率半导体模块结构，其特征在于：所述相变材料为固-固相变材料。
3.根据权利要求1或2所述的功率半导体模块结构，其特征在于：所述相变材料在所述空腔中占用的体积为空腔容积的60%~95%。
4.根据权利要求3所述的功率半导体模块结构，其特征在于：所述金属件采用铜或钼制作。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112968007A (zh) * 2021-02-03 2021-06-15 重庆大学 功率半导体结构及断路器转移支路组件
FR3112241A1 (fr) * 2020-07-02 2022-01-07 Safran Dispositif de refroidissement mis en œuvre dans une application d’électronique de puissance

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Application publication date: 20191025