CN107146775A - A kind of low stray inductance two-side radiation power model - Google Patents
A kind of low stray inductance two-side radiation power model Download PDFInfo
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- CN107146775A CN107146775A CN201710448408.9A CN201710448408A CN107146775A CN 107146775 A CN107146775 A CN 107146775A CN 201710448408 A CN201710448408 A CN 201710448408A CN 107146775 A CN107146775 A CN 107146775A
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- 230000005855 radiation Effects 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 163
- 239000002184 metal Substances 0.000 claims abstract description 163
- 239000000758 substrate Substances 0.000 claims abstract description 143
- 238000005245 sintering Methods 0.000 claims abstract description 19
- 238000003475 lamination Methods 0.000 claims abstract description 12
- 239000004033 plastic Substances 0.000 claims description 19
- 229920003023 plastic Polymers 0.000 claims description 19
- 239000012212 insulator Substances 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 238000003466 welding Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000010257 thawing Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- UIFOTCALDQIDTI-UHFFFAOYSA-N arsanylidynenickel Chemical compound [As]#[Ni] UIFOTCALDQIDTI-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 239000010936 titanium Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a kind of low stray inductance two-side radiation power model, including positive pole power terminal, negative pole power terminal, power output terminal, top metal insulated substrate and bottom metal insulated substrate, top metal insulated substrate is set with bottom metal insulated substrate lamination, sintering has chip to top metal insulated substrate on the two relative face with bottom metal insulated substrate, positive pole power terminal is electrically connected with the chip on bottom metal insulated substrate, and negative pole power terminal is electrically connected with the chip on top metal insulated substrate；Power output terminal includes weld part and the connecting portion provided with mounting hole, and welding position is between the chip sintered on the chip and bottom metal insulated substrate sintered on top metal insulated substrate.The present invention greatly reduces loop stray inductance, reduces the volume of power model, has saved cost, alleviates weight, is especially suitable for the encapsulation of SiC power chips, substantially increases conveyance capacity, improve the reliability of module.
Description
Technical field
The present invention relates to electric and electronic power module, especially a kind of low stray inductance two-side radiation power model.
Background technology
Power Electronic Technique occupies very important status, electric and electronic power mould in current fast-developing industrial circle
Block is widely used to electric automobile as the representative of Power Electronic Technique, and photovoltaic generation, wind-power electricity generation, industrial frequency conversion etc. is gone
Industry.With the emergence of China's industry, electric and electronic power module has more wide market prospects.
Existing electric and electronic power module encapsulation volume is big, and weight weight does not meet the fields such as electric automobile, Aero-Space
High power density, light-weighted requirement.The larger electric and electronic power module of volume, its stray inductance often also than larger, this
It can cause that overshoot voltage is larger, loss increase, and also limit the application in high switching frequency occasion.SiC power electronics devices
Part has high frequency, high temperature, efficient characteristic, but the stray inductance of existing power model is larger, limits the performance of SiC performances.
In addition, with the continuous upgrading of application end power density, the encapsulating structure of existing power model has hindered power density
Further lifting, it is necessary to which the growing demand of power density could be met by developing significantly more efficient radiator structure.
Existing two-side radiation power model such as CN105161477A, because chip individual layer is set, the commutation circuit of electric current
Area is still larger, and often stray inductance is also than larger, and chip individual layer is set so that the volume of power model is relatively
Greatly, power terminal is only connected with control terminal with the first liner plate in addition, sets underaction, liner plate area not to subtract further
It is small, it can also cause loss to increase because current path is longer.
The content of the invention
Goal of the invention：In view of the above-mentioned drawbacks of the prior art, the present invention is intended to provide a kind of small volume, it is lightweight,
The small two-side radiation power model of stray inductance.
Technical scheme：A kind of low stray inductance two-side radiation power model, including positive pole power terminal, negative pole power end
Son, power output terminal, top metal insulated substrate, bottom metal insulated substrate and plastic shell, the top metal insulation
Substrate is set with bottom metal insulated substrate lamination, and top metal insulated substrate is relative at the two with bottom metal insulated substrate
On face sintering have chip, positive pole power terminal is electrically connected with the chip on bottom metal insulated substrate, negative pole power terminal and
Chip electrical connection on top metal insulated substrate；The power output terminal includes weld part and outside plastic shell
Connecting portion, the welding position is in the core sintered on the chip and bottom metal insulated substrate sintered on top metal insulated substrate
Between piece.
Further, the bottom metal insulated substrate is sintered in the one side towards top metal insulated substrate upper half
Bridge switch chip and upper half-bridge diode chip for backlight unit, top metal insulated substrate burn in the one side towards bottom metal insulated substrate
Have lower half-bridge switch chip and lower half-bridge diode chip for backlight unit.
Further, the positive pole power terminal is sintered on bottom metal insulated substrate, and negative pole power terminal is sintered in
On top metal insulated substrate, weld part is in the one side towards bottom metal insulated substrate and upper half-bridge switch chip and upper half-bridge
Diode chip for backlight unit is sintered, in the one side towards top metal insulated substrate and lower half-bridge switch chip and lower half-bridge diode chip for backlight unit
Sintering.
Further, the upper half-bridge switch chip is set with lower half-bridge diode chip for backlight unit lamination, lower half-bridge switch chip
Set with upper half-bridge diode chip for backlight unit lamination.
Further, the bottom metal insulated substrate is provided with bottom metal insulated substrate surface metal-layer, bottom gold
Sintering has upper half-bridge switch chip and upper half-bridge diode chip for backlight unit on category insulated substrate surface metal-layer, when the upper half-bridge switch
When chip is IGBT, the colelctor electrode and the negative electricity of upper half-bridge diode chip for backlight unit of positive pole power terminal and upper half-bridge switch chip
Connection, when the upper half-bridge switch chip is MOSFET, the drain electrode of the positive pole power terminal and upper half-bridge switch chip with
And the negative pole electrical connection of upper half-bridge diode chip for backlight unit.
Further, the top metal insulated substrate is provided with top metal insulated substrate surface metal-layer, first
On half-bridge driven localized metallic layer and second on half-bridge driven localized metallic layer, the top metal insulated substrate surface metal-layer
Sintering has half-bridge drive on half-bridge driven localized metallic layer and second on lower half-bridge switch chip and lower half-bridge diode chip for backlight unit, first
Dynamic localized metallic layer is connected with half-bridge on a upper half-bridge drive terminal, the gate pole of upper half-bridge switch chip and described first and driven respectively
Dynamic localized metallic layer electrical connection, power output terminal is electrically connected with half-bridge driven localized metallic layer on second.
Lower half-bridge driven localized metallic layer, lower half-bridge driven localized metallic layer are additionally provided with the top metal insulated substrate
It is connected with the gate pole of the lower half-bridge switch chip, the other end of lower half-bridge driven localized metallic layer is connected with a lower half-bridge and driven
Moved end, the top metal insulated substrate surface metal-layer is also connected with a lower half-bridge drive terminal.
Further, on the top metal insulated substrate metal layer on back and bottom metal insulated substrate metal layer on back
It is respectively equipped with the first heat abstractor and the second heat abstractor.
Further, the weld part of the power output terminal the position contacted with chip be matrix, not with chip
The position of contact is three-decker, and middle one layer is matrix, and both sides are obturator up and down.
Further, stress-buffer layer is filled between the weld part and chip of the power output terminal.
Further, the plastic shell makes for transmission mould integrated forming technique, the top metal insulated substrate back side
The center section of metal level upper surface and the center section of bottom metal insulated substrate metal layer on back lower surface are exposed independent from
The outside of plastic shell, and it is higher by plastic shell.
Further, the low stray inductance two-side radiation power model is three-phase bridge structure, including three positive pole power
Terminal, three negative pole power terminals and three power output terminals, topological structure are three half-bridges.
Beneficial effect：The top metal insulated substrate of the present invention is set with bottom metal insulated substrate lamination, segment chip
Between there is stacked relation, power output terminal also serves as layer structure, and to be sintered in top metal insulated substrate exhausted with bottom metal
Between edge substrate, loop stray inductance can be substantially reduced, and the stacking of power model inside chip and electrode is set, and is reduced
The volume of power model, has saved cost, alleviates weight, is especially suitable for the encapsulation of SiC power chips；Meanwhile, power mould
Heat abstractor can be set in the both sides of block, can reduce the thermal resistance of power model, improves the radiating efficiency of power model；Also,
The power end of power model inside chip all using large area sintering structure, the bonding line of inner interconnection structure only have one or
Without bonding line, the Module Fail that bonding line failure is caused is greatly reduced, conveyance capacity is substantially increased, improve module can
By property.
Brief description of the drawings
Fig. 1 is the overall appearance structure chart of embodiment 1；
Fig. 2 is the front view of embodiment 1 and partial enlarged drawing；
Fig. 3 is the schematic internal view of embodiment 1；
Fig. 4 is the inside front view of embodiment 1 and partial enlarged drawing；
Fig. 5 is the bottom metal insulated substrate component diagram of embodiment 1；
Fig. 6 is the top metal insulated substrate component diagram of embodiment 1；
Fig. 7 is the exploded perspective view of embodiment 1；
Fig. 8 is conventional half-bridge power model topological structure and commutation circuit schematic diagram；
Fig. 9 is the half-bridge power module topological structure of embodiment 1 and commutation circuit schematic diagram；
Figure 10 is three-phase bridge power model heat sink conception schematic diagram；
Figure 11 is that three-phase bridge power model installs explosive view；
Figure 12 is three-phase bridge power model overall structure diagram；
Figure 13 is three-phase bridge power model topological diagram；
Figure 14 is the structural representation of embodiment 2；
Figure 15 is the structural representation of embodiment 3；
Figure 16 is the schematic internal view of embodiment 4；
Figure 17 is the bottom metal insulated substrate component diagram of embodiment 4；
Figure 18 is the top metal insulated substrate component diagram of embodiment 4；
Figure 19 is the exploded perspective view of embodiment 4.
Embodiment
The technical program is described in detail below by embodiment and with reference to accompanying drawing.
Embodiment 1：
The present invention by switch chip and with respect to the fly-wheel diode of bridge arm is chip-stacked by setting so that commutation circuit road
Footpath is most short, so as to greatly reduce loop stray inductance；By stacking the both sides for setting chip setting thermal dissipating path, reach two-sided
The thermal resistance of the purpose of radiating, further reduction power model.
As shown in figure 1, a kind of low stray inductance two-side radiation power model, including positive pole power terminal 1, negative pole power end
Son 2, power output terminal 3, the bottom metal insulated substrate 5 being connected with positive pole power terminal 1, it is connected with negative pole power terminal 2
Top metal insulated substrate 4, upper half-bridge drive terminal 10, lower half-bridge drive terminal 11 and the plastic shell for encapsulating
15, the positive pole power terminal 1 in the present embodiment is sintered on bottom metal insulated substrate 5, and negative pole power terminal 2 is sintered in top
On metal-insulator substrate 4, two power terminals can also be sintered on the same substrate, then by metal contiguous block or other
Connected mode is connected to another substrate, realizes that positive pole power terminal 1 is electrically connected with the chip on bottom metal insulated substrate 5, bears
Pole power terminal 2 is electrically connected with the chip on top metal insulated substrate 4；Also, top metal insulated substrate 4 in the present embodiment
The metal-insulator substrate used with bottom metal insulated substrate 5 is DBC, i.e., top metal insulated substrate 4 includes insulation base
Plate and the metal level of substrate both sides, towards the one side of bottom metal insulated substrate 5 on be mounted with chip, non-chip it is another
Face is then top metal insulated substrate metal layer on back 41, and similarly, bottom metal insulated substrate 5 also has identical structure, does not pacify
Cartridge chip one side is bottom metal insulated substrate metal layer on back 51；Those skilled in the art can not also use DBC when implementing
Structure, it would however also be possible to employ aluminium is covered in insulated substrate both sides, or side Fu Tong sides cover the metals such as aluminium and are covered in dielectric both sides
Structure；Plastic shell 15 makes for transmission mould integrated forming technique, i.e., by plastic package press by the thermosetting plastics of thawing
It is injected into die cavity, the power model semi-finished product through oversintering is placed with die cavity, the thermosetting plastics of thawing reaches solidification temperature
Can be fast curing-formed after degree, form the plastic shell 15 shown in design of the present invention.Top metal insulated substrate back-side gold
The center section of category layer 41 upper surface and the center section of the lower surface of bottom metal insulated substrate metal layer on back 51 are exposed independent from
In the outside of plastic shell 15, and plastic shell 15 is higher by, as shown in Fig. 2 this structure can carry on the back metal-insulator substrate
Face metal level is preferably contacted with heat abstractor, it is possible to achieve more preferable radiating effect.
As shown in figure 3, inside power model, top metal insulated substrate 4 is set with the lamination of bottom metal insulated substrate 5,
To be parallel just to structure, the metal-insulator substrate being connected in the present embodiment with negative pole power terminal 2 is top metal insulated substrate
4, the metal-insulator substrate being connected with positive pole power terminal 1 is bottom metal insulated substrate 5, and can also insulate top metal base
The component of plate 4 is exchanged with the module position of bottom metal insulated substrate 5, and the effect of present design is not influenceed.Top metal insulation base
Sintering has chip to plate 4 on the two relative face with bottom metal insulated substrate 5；The power output terminal 3 includes welding
Connecting portion 32 in portion 31 and the connecting portion 32 outside plastic shell 15, the present embodiment is provided with mounting hole；The weld part
31 are located between the chip sintered on top metal insulated substrate 4 and the chip sintered on bottom metal insulated substrate 5；This implementation
Weld part 31 in example is planar structure, and one end of weld part 31 bends and upwardly extends to form the connecting portion with mounting hole,
Also a monoblock slab construction can be made as during concrete application without bending according to actual needs.
The layout of power model inside chip is as shown in figure 4, chip is arranged as bottom gold in stacked structure, the present embodiment
Category insulated substrate 5 sintered in the one side towards top metal insulated substrate 4 have on half-bridge switch chip 6 and upper half-bridge diode
Chip 7, top metal insulated substrate 4 is sintered in the one side towards bottom metal insulated substrate 5 the lower He of half-bridge switch chip 8
Lower half-bridge diode chip for backlight unit 9.Specifically：Half-bridge switch chip, power output terminal are provided with bottom metal insulated substrate 5
3 weld part 31 is sintered in the upper surface of half-bridge power chip, and sintering has lower half-bridge diode core on power output terminal 3
Piece 9, upper half-bridge switch chip is set with the lower lamination of half-bridge diode chip for backlight unit 9, and lower half-bridge diode chip for backlight unit 9 is located at upper half-bridge switch
The top of chip, the upper surface sintering of lower half-bridge diode has top metal insulated substrate 4；Similarly, bottom metal insulated substrate 5
On be additionally provided with half-bridge diode chip for backlight unit 7, the weld part 31 of power output terminal 3 is towards bottom metal insulated substrate 5
Simultaneously sintered with upper half-bridge switch chip 6 and upper half-bridge diode chip for backlight unit 7, the one side towards napex metal-insulator substrate 4 with
Lower half-bridge switch chip 8 and lower half-bridge diode chip for backlight unit 9 are sintered.Specifically, the weld part 31 of power output terminal 3 is sintered in
The upper surface of half-bridge diode chip for backlight unit 7, also sintering has lower half-bridge switch chip, lower half-bridge switch core on power output terminal 3
Piece 8 is set with the upper lamination of half-bridge diode chip for backlight unit 7, and lower half-bridge switch chip 8 is located at the top of upper half-bridge diode chip for backlight unit 7, under
The upper surface of half-bridge switch chip 8 has also sintered top metal insulated substrate 4.
In order to further illustrate position and the attachment structure of chip, to upper half-bridge metal-insulator board unit, lower half-bridge gold
The structure of category insulated substrate component is described respectively, as shown in Figure 5, Figure 6.In Fig. 5, positive pole power terminal 1 is sintered in bottom
The layer on surface of metal of metal-insulator substrate 5, bottom metal insulated substrate 5 is provided with bottom metal insulated substrate surface metal-layer 52,
Sintering has upper half-bridge switch chip 6 and upper half-bridge diode chip for backlight unit 7 on bottom metal insulated substrate surface metal-layer 52, works as upper half
When bridge switch chip is IGBT, the colelctor electrode and upper half-bridge diode chip for backlight unit of positive pole power terminal 1 and upper half-bridge switch chip 6
7 negative pole electrical connection, when upper half-bridge switch chip 6 is MOSFET, the positive pole power terminal 1 and upper half-bridge switch chip 6
Drain electrode and upper half-bridge diode chip for backlight unit 7 negative pole electrical connection.
In Fig. 6, negative pole power terminal 2 is sintered in the layer on surface of metal of top metal insulated substrate 4, top metal insulated substrate
4 provided with half-bridge drives on half-bridge driven localized metallic layer 421 and second on top metal insulated substrate surface metal-layer 42, first
Sintering has lower half-bridge switch chip 8 and lower half on dynamic localized metallic layer 422, the top metal insulated substrate surface metal-layer 42
Bridge diode chip for backlight unit 9, half-bridge driven localized metallic layer 422 connects respectively on half-bridge driven localized metallic layer 421 and second on first
There is a upper half-bridge drive terminal 10, the gate pole of upper half-bridge switch chip 6 is driven by half-bridge on metal contiguous block and described first
Dynamic localized metallic layer 421 is electrically connected, half-bridge driven localized metallic on the metal contiguous block and second that power output terminal 3 is provided with
Layer 422 is electrically connected.
Lower half-bridge driven localized metallic layer 423, the local gold of lower half-bridge driven are additionally provided with the top metal insulated substrate 4
Category layer 423 is connected with the gate pole of the lower half-bridge switch chip 8, and the other end of lower half-bridge driven localized metallic layer 423 is connected with
One lower half-bridge drive terminal 11, the top metal insulated substrate surface metal-layer 42 is also connected with a lower half-bridge drive end
Son 11.
Fig. 7 gives the relation of power model inner. layers, and the sintering described in the present embodiment is specifically by weld layer
16 sintering, because the upper and lower surface of switch chip is by electroplating or sputtering or evaporate the metal structure for having titanium nickeline, therefore
Weld layer 16 can be the cored solders such as tin-lead by sintering the weld layer 16 formed or silver paste by sintering the weldering formed
Connect layer 16.In addition, in figure on the gate pole and first of upper half-bridge switch chip 6 between half-bridge driven localized metallic layer 421, output work
Metal contiguous block is employed between half-bridge driven localized metallic layer 422 realize electrical connection, the metal on rate terminal 3 and second
Block can select the metal material with the thermal coefficient of expansion comparison match of chip such as molybdenum, tungsten copper, if not using metal contiguous block
Connected mode, can also use bonding line to be attached.
Fig. 8, Fig. 9 be respectively inside conventional half-bridge topological structure and half-bridge topology of the present invention, traditional power model,
The colelctor electrode of switch chip or drain electrode are connected by weld layer 16 with metal-insulator substrate surface metal level, the transmitting of switch chip
Pole or source electrode are connected by bonding line with surface metal-layer, i.e., lead between upper half-bridge switch chip 6 and lower half-bridge diode chip for backlight unit 9
The thick line crossed in bonding line, metal level connection, figure represents continuous current circuit path；The present invention is by upper half-bridge switch chip and lower half-bridge
The lamination of diode chip for backlight unit 9 is set, and eliminates the metal-insulator substrate metal layer and bonding line of centre, and its access path is most short, because
This its commutation circuit is also most short, so as to considerably reduce stray inductance.
Figure 10, Figure 11 are the connection diagram of power model and heat abstractor, top metal insulated substrate metal layer on back
41 on bottom metal insulated substrate metal layer on back 51 with being respectively equipped with the first heat abstractor 12 and the second heat abstractor 13, top
Metal-insulator substrate back metal level 41 is contacted with the first heat abstractor 12 by heat-conducting silicone grease or other Heat Conduction Materials, bottom gold
Category insulated substrate metal layer on back 51 is contacted also by heat-conducting silicone grease or other Heat Conduction Materials with the second heat abstractor 13；Second dissipates
The both sides of thermal 13 are provided with cross-over block 121, and cross-over block 121 is contacted with the positive/negative power terminal of power model, is easy to
Busbar is installed.
As shown in figure 12, the present invention can be applied in three-phase bridge structure, by the half-bridge work(described in three present invention
The word of rate modular structure one is arranged, and is encapsulated in inside same plastic shell, just can realize the three-phase bridge power of low stray inductance
The power model of module, i.e., one includes three positive pole power terminals 1, three negative pole power terminals 2 and three power output terminals
3, its topological structure is three half-bridges, as shown in figure 13.
Embodiment 2：As shown in figure 14, the present embodiment and the structure of embodiment 1 are essentially identical, and difference is, this reality
It is matrix 311 that the weld part 31 of power output terminal 3 in example, which is applied, in the position contacted with chip, in the position not contacted with chip
Three-decker is set to, middle one layer is matrix 311, and both sides are obturator 312 up and down；Matrix 311 is that thermal coefficient of expansion is less
Metal molybdenum or tungsten copper, obturator 312 are the preferable argent of electric conductivity.
Power chip is sintered on the Mo substrate 311 of output electrode in the present embodiment, what output electrode was not contacted with chip
Position is machined with groove, groove filled with silver.The thermal coefficient of expansion of metal molybdenum is generally 1/3rd of copper, is compared with chip and connect
Closely, in the power model course of work, the thermal stress of weld layer 16 is smaller, and reliability is higher, but the electrical conductivity of molybdenum only has the three of copper
/ mono-, therefore do the silver-colored structure of filling in the part of output electrode and can reduce the resistance of output electrode.
Embodiment 3：As shown in figure 15, the present embodiment and the structure of embodiment 1 are essentially identical, and difference is, output
Stress-buffer layer 14 is filled between the weld part 31 and chip of power terminal 3, the weld part 31 of the power output terminal 3 is
Metallic copper, stress-buffer layer 14 is metal molybdenum or tungsten copper.
Output electrode is pure copper material, because copper with the thermal expansion of chip differs larger, in order to improve the length of weld layer 16
Phase reliability, the present embodiment adds the transition of stress-buffer layer 14 between chip and output electrode, i.e., burnt on the surface of chip
Metal molybdenum or tungsten copper are tied, then molybdenum or tungsten copper are sintered in output electrode again.
Embodiment 4：As illustrated in figs. 16-19, the present embodiment and the structure of embodiment 1 are essentially identical, and difference is, figure
In 17, bottom metal insulated substrate 5 is provided with the local metal level 53 of bottom metal insulated substrate surface metal-layer 52, first and the
Two localized metallics layer 54, the described first local local metal level 54 of metal level 53 and second is connected with a upper half-bridge drive end respectively
Son 10, power output terminal 3 is electrically connected with the second local metal level 54, so as to realize the control to upper half-bridge switch chip.
When the upper half-bridge switch chip 6 is IGBT, the colelctor electrode of positive pole power terminal 1 and upper half-bridge switch chip 6
And the negative pole of upper half-bridge diode chip for backlight unit 7 is electrically connected, the gate pole of upper half-bridge switch chip 6 passes through a bonding line and first game
Portion's metal level 53 is electrically connected.
When the upper half-bridge switch chip 6 is MOSFET, the positive pole power terminal 1 and upper half-bridge switch chip 6
The negative pole electrical connection of drain electrode and upper half-bridge diode chip for backlight unit 7, the gate pole of upper half-bridge switch chip 6 passes through a bonding line and the
One localized metallic layer 53 is electrically connected.
In Figure 18, top metal insulated substrate 4 is local provided with top metal insulated substrate surface metal-layer 42 and the 3rd
Metal level 43, the other end of the 3rd localized metallic layer 43 is connected with a lower half-bridge drive terminal 11, the top metal insulation
Substrate surface metal level 42 is also connected with a lower half-bridge drive terminal 11；
When the lower half-bridge switch chip 8 is IGBT, the emitter stage of negative pole power terminal 2 and lower half-bridge switch chip 8
And the electrical connection of the positive pole of lower half-bridge diode chip for backlight unit 9, gate pole and the 3rd localized metallic 43 phase of layer of lower half-bridge switch chip 8
Even；
When the lower half-bridge switch chip 8 is MOSFET, the source electrode of negative pole power terminal 2 and lower half-bridge switch chip 8
And the electrical connection of the positive pole of lower half-bridge diode chip for backlight unit 9, gate pole and the 3rd localized metallic 43 phase of layer of lower half-bridge switch chip 8
Even.
The present invention as the basis for forming semiconductor chip, silicon substrate can be used, can also with use germanium substrate or
III-V semi-conducting materials, for example, GaN or SiC；In addition, for packaging, molding or encapsulation for, can use plastic material or
Ceramic material etc..
It the above is only the preferred embodiment of the present invention, it should be pointed out that：Come for those skilled in the art
Say, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of low stray inductance two-side radiation power model, including positive pole power terminal (1), negative pole power terminal (2), output
Power terminal (3), top metal insulated substrate (4), bottom metal insulated substrate (5) and plastic shell (15), it is characterised in that
The top metal insulated substrate (4) is set with bottom metal insulated substrate (5) lamination, top metal insulated substrate (4) and bottom
Sintering has chip, positive pole power terminal (1) and bottom metal insulation base to portion's metal-insulator substrate (5) on the two relative face
Chip electrical connection on plate (5), negative pole power terminal (2) is electrically connected with the chip on top metal insulated substrate (4)；It is described defeated
Go out power terminal (3) including weld part (31) and positioned at the outside connecting portion (32) of plastic shell (15), the weld part (31)
Between the chip sintered on the chip and bottom metal insulated substrate (5) sintered on top metal insulated substrate (4).
2. a kind of low stray inductance two-side radiation power model according to claim 1, it is characterised in that the bottom gold
Category insulated substrate (5) sintering in the one side towards top metal insulated substrate (4) has upper half-bridge switch chip (6) and upper half-bridge
Diode chip for backlight unit (7), top metal insulated substrate (4) is sintered in the one side towards bottom metal insulated substrate (5) lower half
Bridge switch chip (8) and lower half-bridge diode chip for backlight unit (9).
3. a kind of low stray inductance two-side radiation power model according to claim 1, it is characterised in that the positive pole work(
Rate terminal (1) is sintered on bottom metal insulated substrate (5), and negative pole power terminal (2) is sintered in top metal insulated substrate (4)
On, weld part (31) is in the one side towards bottom metal insulated substrate (5) and upper half-bridge switch chip (6) and upper half-bridge diode
Chip (7) is sintered, in the one side towards top metal insulated substrate (4) and lower half-bridge switch chip (8) and lower half-bridge diode
Chip (9) is sintered.
4. a kind of low stray inductance two-side radiation power model according to claim 1, it is characterised in that the upper half-bridge
Switch chip (6) is set with lower half-bridge diode chip for backlight unit (9) lamination, lower half-bridge switch chip (8) and upper half-bridge diode chip for backlight unit
(7) lamination is set.
5. a kind of low stray inductance two-side radiation power model according to claim 2, it is characterised in that bottom metal is exhausted
Edge substrate (5) is provided with bottom metal insulated substrate surface metal-layer (52), bottom metal insulated substrate surface metal-layer (52)
Upper sintering has upper half-bridge switch chip (6) and upper half-bridge diode chip for backlight unit (7), when the upper half-bridge switch chip is IGBT,
Positive pole power terminal (1) is electrically connected with the colelctor electrode of upper half-bridge switch chip (6) and the negative pole of upper half-bridge diode chip for backlight unit, when
When the upper half-bridge switch chip (6) is MOSFET, the drain electrode of the positive pole power terminal (1) and upper half-bridge switch chip (6)
And the negative pole electrical connection of upper half-bridge diode chip for backlight unit.
6. a kind of low stray inductance two-side radiation power model according to claim 2, it is characterised in that the top-gold
Belong to insulated substrate (4) provided with half-bridge driven localized metallic layer on top metal insulated substrate surface metal-layer (42), first
(421) and on second sintered on half-bridge driven localized metallic layer (422), the top metal insulated substrate surface metal-layer (42)
There is half-bridge driven localized metallic layer (421) and second on lower half-bridge switch chip (8) and lower half-bridge diode chip for backlight unit (9), first
Upper half-bridge driven localized metallic layer (422) is connected with a upper half-bridge drive terminal (10), the door of upper half-bridge switch chip (6) respectively
Pole is electrically connected with half-bridge driven localized metallic layer (421) on described first, half-bridge driven office on power output terminal (3) and second
Portion's metal level (422) is electrically connected；
Lower half-bridge driven localized metallic layer (423), the local gold of lower half-bridge driven are additionally provided with the top metal insulated substrate (4)
Category layer (423) is connected with the gate pole of the lower half-bridge switch chip (8), the other end of lower half-bridge driven localized metallic layer (423)
A lower half-bridge drive terminal (11) is connected with, the top metal insulated substrate surface metal-layer (42) is also connected with one
Half-bridge driven terminal (11).
7. a kind of low stray inductance two-side radiation power model according to claim 1, it is characterised in that the top-gold
Category insulated substrate metal layer on back (41) is with being respectively equipped with the first radiating dress on bottom metal insulated substrate metal layer on back (51)
Put (12) and the second heat abstractor (13).
8. a kind of low stray inductance two-side radiation power model according to claim 1, it is characterised in that the output work
The weld part (31) of rate terminal (3) is matrix (311) in the position contacted with chip, is three layers in the position not contacted with chip
Structure, middle one layer is matrix (311), and both sides are obturator (312) up and down.
9. a kind of low stray inductance two-side radiation power model according to claim 1, it is characterised in that the output work
The weld part (31) of rate terminal (3) is filled with stress-buffer layer (14) between chip.
10. a kind of low stray inductance two-side radiation power model according to claim 1, it is characterised in that the plastic packaging
Shell (15) makes for transmission mould integrated forming technique, the centre of top metal insulated substrate metal layer on back (41) upper surface
Part and the center section of bottom metal insulated substrate metal layer on back (51) lower surface are exposed independent from plastic shell (15)
Outside, and it is higher by plastic shell (15).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710448408.9A CN107146775A (en) | 2017-06-14 | 2017-06-14 | A kind of low stray inductance two-side radiation power model |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710448408.9A CN107146775A (en) | 2017-06-14 | 2017-06-14 | A kind of low stray inductance two-side radiation power model |
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|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261601A (en) * | 2020-01-16 | 2020-06-09 | 浙江大学 | Clamp embedded type high-integration-level compression joint type packaged power module |
| CN112290773A (en) * | 2020-10-29 | 2021-01-29 | 浙江大学 | Voltage-variable compression joint type packaging power module and modeling method of thermal resistance network model thereof |
| WO2022135595A1 (en) * | 2020-12-25 | 2022-06-30 | 比亚迪半导体股份有限公司 | Power module |
| CN115050703A (en) * | 2022-08-16 | 2022-09-13 | 杭州飞仕得科技有限公司 | Power device packaging structure and power converter |
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| JP2006134990A (en) * | 2004-11-04 | 2006-05-25 | Fuji Electric Holdings Co Ltd | Semiconductor apparatus |
| CN105931998A (en) * | 2016-06-17 | 2016-09-07 | 扬州国扬电子有限公司 | Insulating substrate structure and power module employing insulating substrate |
| CN207165543U (en) * | 2017-06-14 | 2018-03-30 | 扬州国扬电子有限公司 | A kind of low stray inductance two-side radiation power model |
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| JP2006134990A (en) * | 2004-11-04 | 2006-05-25 | Fuji Electric Holdings Co Ltd | Semiconductor apparatus |
| CN105931998A (en) * | 2016-06-17 | 2016-09-07 | 扬州国扬电子有限公司 | Insulating substrate structure and power module employing insulating substrate |
| CN207165543U (en) * | 2017-06-14 | 2018-03-30 | 扬州国扬电子有限公司 | A kind of low stray inductance two-side radiation power model |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261601A (en) * | 2020-01-16 | 2020-06-09 | 浙江大学 | Clamp embedded type high-integration-level compression joint type packaged power module |
| CN111261601B (en) * | 2020-01-16 | 2021-10-19 | 浙江大学 | Clamp embedded type high-integration-level compression joint type packaged power module |
| CN112290773A (en) * | 2020-10-29 | 2021-01-29 | 浙江大学 | Voltage-variable compression joint type packaging power module and modeling method of thermal resistance network model thereof |
| WO2022135595A1 (en) * | 2020-12-25 | 2022-06-30 | 比亚迪半导体股份有限公司 | Power module |
| CN115050703A (en) * | 2022-08-16 | 2022-09-13 | 杭州飞仕得科技有限公司 | Power device packaging structure and power converter |
| CN115050703B (en) * | 2022-08-16 | 2022-10-25 | 杭州飞仕得科技有限公司 | Power device packaging structure and power converter |
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