CN110313052B - 基板处理装置及基板处理方法 - Google Patents

基板处理装置及基板处理方法 Download PDF

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Publication number: CN110313052B
Authority: CN; China
Prior art keywords: substrate; chamber; liquid; unit; curing
Prior art date: 2017-03-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN201880011744.XA

Other languages

English (en)

Chinese (zh)

Other versions

CN110313052A (zh

Inventor

尾辻正幸

高桥光和

本庄一大

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Screen Holdings Co Ltd

Original Assignee

Screen Holdings Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-03-27

Filing date

2018-03-01

Publication date

2023-07-07

2018-03-01 Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd

2019-10-08 Publication of CN110313052A publication Critical patent/CN110313052A/zh

2023-07-07 Application granted granted Critical

2023-07-07 Publication of CN110313052B publication Critical patent/CN110313052B/zh

Status Active legal-status Critical Current

2038-03-01 Anticipated expiration legal-status Critical

Links

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Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices

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Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Robotics (AREA)
Cleaning Or Drying Semiconductors (AREA)

CN201880011744.XA 2017-03-27 2018-03-01 基板处理装置及基板处理方法 Active CN110313052B (zh)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2017061381A JP6994307B2 (ja)	2017-03-27	2017-03-27	基板処理装置および基板処理方法
JP2017-061381		2017-03-27
PCT/JP2018/007861 WO2018180181A1 (ja)	2017-03-27	2018-03-01	基板処理装置および基板処理方法

Publications (2)

Publication Number	Publication Date
CN110313052A CN110313052A (zh)	2019-10-08
CN110313052B true CN110313052B (zh)	2023-07-07

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ID=63676998

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CN201880011744.XA Active CN110313052B (zh)	2017-03-27	2018-03-01	基板处理装置及基板处理方法

Country Status (5)

Country	Link
JP (1)	JP6994307B2 (ja)
KR (1)	KR102336153B1 (ja)
CN (1)	CN110313052B (ja)
TW (1)	TWI660418B (ja)
WO (1)	WO2018180181A1 (ja)

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JP2020036641A (ja) *	2018-08-31	2020-03-12	株式会社三洋物産	遊技機
JP7187268B2 (ja) *	2018-11-02	2022-12-12	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置及び基板処理方法
JP7181068B2 (ja)	2018-11-30	2022-11-30	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置
JP7116676B2 (ja) *	2018-12-14	2022-08-10	株式会社Ｓｃｒｅｅｎホールディングス	基板処理方法および基板処理装置
KR102288985B1 (ko) *	2019-06-27	2021-08-13	세메스 주식회사	액공급유닛, 기판 처리 장치 및 기판 처리 방법

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2017
- 2017-03-27 JP JP2017061381A patent/JP6994307B2/ja active Active
2018
- 2018-03-01 WO PCT/JP2018/007861 patent/WO2018180181A1/ja active Application Filing
- 2018-03-01 CN CN201880011744.XA patent/CN110313052B/zh active Active
- 2018-03-01 KR KR1020197025384A patent/KR102336153B1/ko active IP Right Grant
- 2018-03-09 TW TW107107976A patent/TWI660418B/zh active

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TW200831203A (en) *	2006-10-19	2008-08-01	Dainippon Screen Mfg	Substrate processing apparatus and substrate processing method
CN102214548A (zh) *	2010-03-31	2011-10-12	大日本网屏制造株式会社	基板处理装置及基板处理方法
CN106252199A (zh) *	2015-06-10	2016-12-21	株式会社思可林集团	基板处理方法以及基板处理装置

Also Published As

Publication number	Publication date
TWI660418B (zh)	2019-05-21
CN110313052A (zh)	2019-10-08
TW201836002A (zh)	2018-10-01
JP6994307B2 (ja)	2022-01-14
KR20190111100A (ko)	2019-10-01
KR102336153B1 (ko)	2021-12-06
JP2018164031A (ja)	2018-10-18
WO2018180181A1 (ja)	2018-10-04

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2019-10-08	PB01	Publication
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2019-11-01	SE01	Entry into force of request for substantive examination
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2023-07-07	GR01	Patent grant
2023-07-07	GR01	Patent grant

Publication	Publication Date	Title
CN110313052B (zh)	2023-07-07	基板处理装置及基板处理方法
TWI686244B (zh)	2020-03-01	基板處理裝置
TWI627489B (zh)	2018-06-21	Substrate processing method, program, computer memory medium and substrate processing system
KR101940603B1 (ko)	2019-01-21	기판 처리 방법, 기판 처리 장치 및 기억 매체
TWI357100B (en)	2012-01-21	Substrate processing apparatus
KR101464030B1 (ko)	2014-11-20	인터페이스 장치
TW200303577A (en)	2003-09-01	Dividing method of semiconductor wafer
KR20080059070A (ko)	2008-06-26	감압건조장치
JP2006310730A (ja)	2006-11-09	基板処理装置
JP2003179025A (ja)	2003-06-27	基板処理装置
JP2005340846A (ja)	2005-12-08	基板処理装置及び基板処理方法並びに基板の製造方法
JP2001267236A (ja)	2001-09-28	処理装置および処理方法
JP2002329661A (ja)	2002-11-15	基板処理装置及び基板処理方法及び基板の製造方法
CN110352473B (zh)	2023-06-09	基板处理装置及基板处理方法
KR102037921B1 (ko)	2019-11-26	기판처리장치 및 방법
JP4807749B2 (ja)	2011-11-02	露光・現像処理方法
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