CN110313052B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
CN110313052B
CN110313052B CN201880011744.XA CN201880011744A CN110313052B CN 110313052 B CN110313052 B CN 110313052B CN 201880011744 A CN201880011744 A CN 201880011744A CN 110313052 B CN110313052 B CN 110313052B
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substrate
chamber
liquid
unit
curing
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CN110313052A (en
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尾辻正幸
高桥光和
本庄一大
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

The substrate processing apparatus includes: a liquid treatment unit for supplying a treatment liquid to the surface of the substrate in the treatment chamber, thereby forming a treatment liquid film on the surface of the substrate; a curing unit that cures the treatment liquid film in a curing chamber to form a cured film on the surface of the substrate; a removal processing unit that supplies a removal liquid for removing the cured film to the surface of the substrate in a removal chamber; a main transport unit for feeding a substrate into the processing chamber and feeding the substrate out of the removal chamber; and a local transport unit for transporting the substrate from the processing chamber and transporting the substrate to the curing chamber.

Description

Substrate processing apparatus and substrate processing method
Technical Field
The present invention relates to an apparatus and method for processing a substrate. The substrate to be processed includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for an FED (Field Emission Display: field emission display), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and the like.
Background
In a process for manufacturing a semiconductor device or the like, a cleaning process for removing foreign matters adhering to the surface of a substrate is performed. For example, patent document 1 discloses a substrate cleaning system that performs the following steps: supplying a film-forming treatment liquid containing a volatile component to a main surface of a substrate; forming a film on a main surface of a substrate by curing or hardening a film-forming treatment liquid by evaporating a volatile component; and removing the film on the main surface of the substrate by using the removing liquid. When the film-forming treatment liquid is cured or hardened, volume shrinkage occurs, and when the removal liquid is supplied, volume expansion occurs due to swelling of the film. The stretching force acts on the particles on the substrate as the volume contracts and expands, causing the particles to detach from the major surface of the substrate (the surface containing the pattern). Thereby, particles on the main surface of the substrate can be removed.
Fig. 14 of patent document 1 shows a substrate cleaning apparatus having a first processing unit, a second processing unit, and a third processing unit. The substrate taken out from the carrier is sent to the first processing section by the substrate conveying device. The first processing unit supplies a top coat (top coat) liquid to the substrate as a film forming processing liquid. The substrate supplied with the surface coating liquid is taken out from the first processing section by the substrate conveying device and is sent into the third processing section. The third processing unit heats the substrate by a hot plate (hot plate) to volatilize the volatile components in the surface coating liquid. Thus, the topcoat solution cures or hardens while contracting in volume, thereby forming a topcoat film. The substrate on which the surface coating film is formed is taken out from the third processing section by the substrate conveying device and is sent into the second processing section. The second processing unit removes the surface coating film by supplying an alkaline developer as a removing liquid to the substrate. Then, the substrate is cleaned in the second processing unit, and the cleaned substrate is taken out from the second processing unit by the substrate conveying device. The processed substrate is accommodated on a carrier.
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2015-62259 (FIG. 14)
Disclosure of Invention
Problems to be solved by the invention
In the prior art of patent document 1, the same substrate transfer apparatus transfers an unprocessed substrate to a first processing unit, transfers a substrate coated with a film forming processing liquid from the first processing unit to a third processing unit, transfers a substrate having a film formed thereon by a heat treatment in the third processing unit from the third processing unit to a second processing unit, and further transfers a substrate having undergone a process in the second processing unit from the second processing unit.
Since the surface of the processed substrate in the first processing section is wetted with the unhardened film forming processing liquid, the film forming processing liquid may adhere to the substrate transport apparatus. The attached processing liquid is then transferred to another substrate held by the substrate transfer device, thereby contaminating the substrate. In particular, transfer of the processing liquid to the substrate after the processing is completed may deteriorate the quality of the substrate processing. In addition, since the atmosphere of the film forming processing liquid is enclosed in the space where the substrate is transported by the substrate transport apparatus, the atmosphere may adversely affect the substrate.
Accordingly, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method, which suppress the influence of a process for forming a cured film on a substrate surface from affecting other substrates.
Means for solving the problems
An embodiment of the present invention provides a substrate processing apparatus including: a liquid treatment unit for supplying a treatment liquid to the surface of the substrate in the treatment chamber, thereby forming a treatment liquid film on the surface of the substrate; a curing unit that cures the treatment liquid film in a curing chamber to form a cured film on the surface of the substrate; a removal processing unit that supplies a removal liquid for removing the cured film to the surface of the substrate in a removal chamber; a main transport unit for feeding a substrate into the processing chamber and feeding the substrate out of the removal chamber; and a local transport unit for transporting the substrate from the processing chamber and transporting the substrate to the curing chamber.
With this configuration, after forming a treatment liquid film on a substrate, the substrate is sent into a curing chamber by a local transport unit. Therefore, the main transfer unit can be prevented from being contaminated with the processing liquid, and thus transfer of the processing liquid to other substrates can be suppressed or prevented. In addition, since the atmosphere of the processing liquid can be suppressed or prevented from being trapped in the space where the substrate is conveyed by the main conveyance unit, the substrate can be prevented from being adversely affected by the atmosphere of the processing liquid. In this way, the substrate processing quality can be improved. In addition, the substrate after the processing in the processing chamber is completed can be rapidly conveyed to the curing chamber regardless of the operation state of the main conveying unit.
The substrate processing apparatus may be used for cleaning to remove foreign matter from the surface of a substrate. The process liquid film undergoes volume shrinkage when solidified on the surface of the substrate. In addition, when the removing liquid is supplied to remove the cured film formed on the surface of the substrate, the cured film swells to cause volume expansion. When the volume is contracted and expanded, a tensile force acts on the foreign matter (particles or the like) on the substrate surface, and thereby the foreign matter on the substrate surface can be peeled off. The peeled foreign matter can be removed out of the substrate together with the cured film.
In an embodiment of the invention, the curing unit includes a heating unit for heating the substrate. This can heat the treatment liquid film on the substrate and cure the treatment liquid film.
More specifically, the curing unit may also include: a substrate holding unit for holding a substrate; and the heating unit heats the substrate held by the substrate holding unit.
The curing unit may also include a pressure reducing unit that reduces the pressure within the curing chamber to a pressure below atmospheric pressure. The curing unit may further include a ventilation unit that ventilates the curing chamber. The ventilation unit may also include a low humidity gas supply unit that supplies a low humidity gas (e.g., an inert gas) into the curing chamber. This can promote drying of the film forming process liquid film on the substrate, and thus promote curing thereof.
In one embodiment of the present invention, the main transport unit is disposed in a main transport chamber, and the local transport unit is disposed in a local transport chamber isolated from the main transport chamber. Thus, the atmosphere of the processing liquid can be more reliably suppressed or prevented from being trapped in the main transport chamber, and hence the substrate transported by the main transport unit can be suppressed or prevented from being affected by the atmosphere of the processing liquid.
In one embodiment of the present invention, the partial transfer unit further transfers the substrate from the curing chamber and transfers the substrate to the removing chamber. This can prevent the main transport unit from being affected by the substrate after the curing process. For example, even if the substrate after the curing treatment is at a high temperature, heat accumulation by the main transport unit can be avoided.
In the structure of patent document 1, since the substrate is heated in the third processing unit, the heated substrate is held by the substrate transport apparatus, and there is a possibility that heat is accumulated in the substrate transport apparatus. Since the accumulated heat is transferred to the substrate transported by the substrate transport apparatus, there is a possibility that the substrate may be adversely affected.
Therefore, by conveying the substrate from the curing chamber to the removal chamber by the local conveying unit, accumulation of heat in the main conveying unit can be avoided, and therefore, the influence of heat on the substrate conveyed by the main conveying unit can be suppressed.
In one embodiment of the present invention, the local delivery unit includes: a first transfer arm for transferring the substrate from the processing chamber to the curing chamber; and a second transfer arm that transfers the substrate from the curing chamber to the removing chamber.
With this configuration, the substrate on which the process liquid film is formed is transported by the first transport arm, and the substrate on which the cured film is formed is transported by the second transport arm. Therefore, even if the processing liquid adheres to the first transfer arm, transfer of the processing liquid to the cured substrate can be suppressed or prevented.
Preferably, the second transfer arm is disposed above the first transfer arm, whereby the adhesion of the processing liquid on the substrate held by the first transfer arm to the second transfer arm can be suppressed or prevented.
In one embodiment of the present invention, the liquid treatment unit includes: a substrate holding unit that horizontally holds a substrate; and a processing liquid ejecting unit that ejects the processing liquid to the substrate held by the substrate holding unit. With this configuration, the treatment liquid can be spread on the substrate held horizontally, and a treatment liquid film can be formed to cover the surface of the substrate.
In one embodiment of the invention, the process chamber and the removal chamber are a common chamber. That is, the treatment liquid and the removal chamber may be different chambers or may be a common chamber.
In one embodiment of the present invention, the partial transport unit has a transport arm that holds a substrate and passes through a partial transport chamber, and the substrate processing apparatus further includes an arm cleaning nozzle that is provided in the partial transport chamber and ejects a cleaning liquid for cleaning the transport arm.
With this configuration, the transport arm of the local transport unit can be cleaned, and therefore the transport arm can be kept in a clean state. This can prevent contamination of the processing liquid from accumulating in the transfer arm, and can transfer the substrate while suppressing contamination caused by the processing liquid. Further, since the cleaning of the transfer arm is performed in the partial transfer chamber, the influence of the cleaning liquid or the processing liquid on the substrate transferred by the main transfer unit can be suppressed or prevented.
In one embodiment of the present invention, the local delivery chamber includes: a bottom portion that receives the cleaning liquid; and a liquid discharging unit discharging the cleaning liquid received by the bottom. This can discharge the cleaning liquid after cleaning the transport arm to the outside of the local transport chamber, and thus can keep the ambient gas in the local transport chamber clean. This can further suppress the influence of the processing liquid environmental gas on the substrate.
In one embodiment of the present invention, the partial transfer unit has a transfer arm holding a substrate, and the substrate processing apparatus further includes an arm cleaning nozzle provided on the transfer arm and ejecting a cleaning liquid for cleaning the transfer arm. With this configuration, the arm cleaning nozzle provided in the transport arm discharges the cleaning liquid, so that the transport arm can be reliably cleaned. Therefore, contamination of the processing liquid can be prevented from accumulating on the transfer arm, and the substrate can be transferred while suppressing contamination caused by the processing liquid. In addition, the influence of the cleaning liquid or the processing liquid on the substrate transported by the main transport unit can be suppressed or prevented.
In an embodiment of the present invention, the partial transfer unit has a transfer arm that holds a substrate and passes through a partial transfer chamber, and the substrate processing apparatus further includes: an arm cleaning chamber provided adjacent to the partial conveyance chamber; an arm cleaning nozzle disposed in the arm cleaning chamber, for ejecting a cleaning liquid for cleaning the transport arm; and a decompression unit for decompressing the arm cleaning chamber to a pressure lower than the atmospheric pressure to dry the transport arm.
With this configuration, since the arm cleaning chamber is provided adjacent to the partial conveyance chamber, the conveyance arm can be cleaned in the arm cleaning chamber when the partial conveyance unit is not conveying the substrate. Since the arm cleaning nozzle is disposed in the arm cleaning chamber, the cleaning liquid can be prevented from entering the local conveyance chamber and the conveyance arm can be cleaned. This can suppress the influence of the cleaning liquid on the substrate. In addition, by depressurizing the arm cleaning chamber, the transport arm cleaned with the cleaning liquid can be quickly dried.
In one embodiment of the present invention, the removal processing unit includes: a substrate holding unit that horizontally holds a substrate in the removal chamber; and a removing liquid ejecting unit that ejects removing liquid to the substrate held by the substrate holding unit. With this configuration, since the removing liquid is supplied to the horizontally held substrate, the removing liquid can be easily spread over the surface of the substrate, and the cured film can be efficiently removed.
An embodiment of the present invention provides a substrate processing method including: a process liquid film forming step of supplying a process liquid to the surface of the substrate in the process chamber to form a process liquid film on the surface of the substrate; a first partial conveyance step of conveying the substrate to a curing chamber after the process liquid film forming step; a cured film forming step of forming a cured film on the surface of the substrate by curing the treatment liquid film in the curing chamber; a second partial conveyance step of conveying the substrate to a removal chamber after the cured film formation step; a removal processing step of supplying a removal liquid for removing the cured film to the surface of the substrate in the removal chamber; and a main transport step of feeding the substrate into the processing chamber by a main transport unit and feeding the substrate out of the removal chamber.
In one embodiment of the present invention, the cured film forming process includes a heating process for heating the substrate by a heating unit.
In one embodiment of the present invention, the substrate is transported in the main transport step through a main transport chamber, and the substrate is transported in the first partial transport step through a partial transport chamber isolated from the main transport chamber.
In one embodiment of the present invention, the first partial shipment step and the second partial shipment step are performed by a common partial shipment unit.
In one embodiment of the present invention, the first partial shipment step is performed by a first shipment arm of the partial shipment unit, and the second partial shipment step is performed by a second shipment arm of the partial shipment unit.
The method according to an embodiment of the present invention further includes an arm cleaning process for supplying a cleaning liquid to the transport arm of the local transport unit.
In one embodiment of the invention, the process chamber and the removal chamber are a common chamber.
In one embodiment of the present invention, a cleaning step of cleaning the substrate is performed before the process liquid film forming step.
A substrate processing apparatus according to an embodiment of the present invention includes: a liquid processing unit that supplies a film forming processing liquid to a surface of a substrate in a processing chamber, thereby forming a film forming processing liquid film on the surface of the substrate; a curing unit that cures the film forming process liquid film in a curing chamber to form a cured film on the surface of the substrate; a removal processing unit that supplies a removal liquid for removing the cured film to the surface of the substrate in a removal chamber; a main transport unit for feeding a substrate into the processing chamber and feeding the substrate out of the removal chamber; and a local transport unit that transports the substrate in a state where the film forming process liquid film is formed on the surface thereof, and feeds the substrate to the curing chamber; the main transport unit is disposed in a main transport chamber, and the local transport unit is disposed in a local transport chamber isolated from the main transport chamber.
In addition, a substrate processing method according to an embodiment of the present invention includes: a process liquid film forming step of supplying a film forming process liquid to the surface of the substrate in the process chamber, thereby forming a film forming process liquid film on the surface of the substrate; a first partial transfer step of transferring the substrate in a state where the film forming process liquid film is formed on a surface thereof from the process chamber to a curing chamber after the process liquid film forming step; a cured film forming step of forming a cured film on the surface of the substrate by curing the film forming process liquid film in the curing chamber; a second partial conveyance step of conveying the substrate to a removal chamber after the cured film formation step; a removal processing step of supplying a removal liquid for removing the cured film to the surface of the substrate in the removal chamber; and a main transport step of feeding the substrate into the processing chamber before the process liquid film forming step, and feeding the substrate out of the removal chamber after the removal processing step, by using a main transport unit; the substrate is transported through a main transport chamber in the main transport step, and the substrate is transported through a partial transport chamber isolated from the main transport chamber in the first partial transport step.
The foregoing and still other objects, features and effects of the present invention will be clarified by the following description of embodiments described with reference to the accompanying drawings.
Drawings
Fig. 1A is a plan view for explaining the structure of a substrate processing apparatus according to a first embodiment of the present invention.
Fig. 1B is a schematic elevation view for explaining the structure of the substrate processing apparatus of the first embodiment.
Fig. 2 is a schematic cross-sectional view for explaining a configuration example of a liquid treatment unit included in the substrate treatment apparatus.
Fig. 3 is a schematic cross-sectional view for explaining a configuration example of a curing unit included in the substrate processing apparatus.
Fig. 4 is a diagram for explaining a configuration example of a local transfer robot included in the substrate processing apparatus.
Fig. 5A is a schematic plan view for explaining the structure of a substrate processing apparatus according to a second embodiment of the present invention.
Fig. 5B is a schematic elevation view for explaining the structure of the substrate processing apparatus of the second embodiment.
Fig. 6A is a schematic plan view for explaining the structure of a substrate processing apparatus according to a third embodiment of the present invention.
Fig. 6B is a schematic elevation view for explaining the structure of the substrate processing apparatus of the third embodiment.
Fig. 7 is a schematic elevation view for explaining the structure of a substrate processing apparatus according to a fourth embodiment of the present invention, showing the structure of one side of a main transfer chamber.
Fig. 8 is a schematic plan view for explaining the structure of a substrate processing apparatus according to a fifth embodiment of the present invention.
Fig. 9 is a diagram for explaining the structure of a substrate processing apparatus according to a sixth embodiment of the present invention, and shows a configuration example of a curing unit.
Fig. 10 is a view for explaining a seventh embodiment of the present invention, and shows a structure of a hand cleaning unit for cleaning a hand of a local conveyance robot.
Fig. 11 is a diagram for explaining the structure of a substrate processing apparatus according to an eighth embodiment of the present invention, and is a cross-sectional view schematically showing still another configuration example of a curing unit.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
First embodiment
Fig. 1A is a plan view for explaining the structure of a substrate processing apparatus 1 according to a first embodiment of the present invention, and fig. 1B is an elevation view thereof. The substrate processing apparatus 1 includes a carrier holding section 2, an Indexer Robot (IR), a plurality of liquid processing units M11 to M14, M21 to M24 (collectively referred to as "liquid processing units M"), a plurality of curing units D11 to D14, D21 to D24 (collectively referred to as "curing units D"), a main conveyance robot CR, and local conveyance robots LR11 to LR14, LR21 to LR24 (collectively referred to as "local conveyance robots LR"). The main conveyance robot CR is an example of a main conveyance unit, and the local conveyance robot LR is an example of a local conveyance unit.
The carrier holding unit 2 holds a carrier 3, which is a substrate container that holds a plurality of substrates W in a stacked state. In the present embodiment, the carrier holding portion 2 is configured to be able to hold a plurality of carriers 3. The indexer robot IR picks up and places the substrate W by accessing the carrier 3 held by the carrier holding section 2, and transfers the substrate W to and from the main transfer robot CR.
In the present embodiment, the plurality of liquid treatment units M and the plurality of curing units D are arranged three-dimensionally so as to form a multilayer structure (two-layer structure in the present embodiment). Specifically, as shown in fig. 1A, in a plan view, the main transfer robot CR is disposed in the main transfer chamber 5 extending linearly from the carrier holding portion 2, and two stacked cell groups G1, G2 and G3, G4 are disposed along the main transfer chamber 5 on both sides of the main transfer chamber 5. Thus, in a plan view, 4 laminated cell groups G1 to G4 are arranged around the main conveyance robot CR.
In the first layer S1 and the second layer S2 of the substrate processing apparatus 1, 4 liquid processing units M11 to M14 and M21 to M24 are arranged, respectively, and the substrate processing apparatus 1 has a total of 8 liquid processing units M. In the first layer S1, two liquid treatment units M11, M12, M13, and M14 are disposed along the main conveyance chamber 5 on both sides of the main conveyance chamber 5. The 4 liquid treatment units M11 to M14 are provided with 4 curing units D11 to D14, respectively. Further, in the second layer S2, two liquid treatment units M21, M22, M23, and M24 are disposed along the main conveyance chamber 5 on both sides of the main conveyance chamber 5. The 4 liquid treatment units M21 to M24 are provided with 4 curing units D21 to D24, respectively. One liquid handling unit M forms a corresponding pair with the curing unit D arranged thereon.
The laminated unit group G1 is configured by laminating the liquid treatment unit M11, the curing unit D11, the liquid treatment unit M21, and the curing unit D21 in this order from below. The laminated unit group G2 is configured by laminating the liquid treatment unit M12, the curing unit D12, the liquid treatment unit M22, and the curing unit D22 in this order from the bottom. The laminated unit group G3 is configured by laminating the liquid treatment unit M13, the curing unit D13, the liquid treatment unit M23, and the curing unit D23 in this order from the bottom. The laminated unit group G4 is configured by laminating the liquid treatment unit M14, the curing unit D14, the liquid treatment unit M24, and the curing unit D24 in this order from the bottom.
The main transfer robot CR can access a total of 8 liquid processing units M to transfer the substrate W, and can transfer the substrate W to and from the indexer robot IR. The main transfer robot CR may be configured to be able to access a total of 8 curing units D to take out the substrates W.
In the present embodiment, the local transfer robots LR are 4 in the first layer S1 and 4 in the second layer S2. More specifically, in the first floor S1, two partial conveyance robots LR11, LR12, LR13, LR14 are disposed on both sides of the main conveyance chamber 5 in a plan view. More specifically, one local transfer robot LR11 is disposed between the carrier holding portion 2 and the liquid processing unit M11 in the first stage S1 on the side of the main transfer chamber 5, and the other local transfer robot LR12 is disposed at the end portion on the side away from the carrier holding portion 2. The arrangement of the two partial conveyance robots LR13, LR14 on the other side of the main conveyance chamber 5 is also similar. The 4 partial transfer robots LR21, LR22 and LR23, LR24 in the second floor S2 are also arranged in the same manner. The local conveyance robots LR11 to LR14 and LR21 to LR24 are disposed in the local conveyance chambers C11 to C14 and C21 to C24 (collectively referred to as "local conveyance chambers C"), respectively. The partial conveyance chamber C is formed with a conveyance space that is divided into separate (isolated) from the main conveyance chamber 5.
In this way, one local transfer robot LR is provided for each pair of the liquid processing unit M and the curing unit D. The partial transfer robot LR takes out the substrate W processed by the liquid processing unit M from the liquid processing unit M and transfers the substrate W to the corresponding curing unit D.
The operation examples of the indexer robot IR, the main transfer robot CR, and the partial transfer robot LR will be described below.
That is, the indexer robot IR takes out an unprocessed substrate W from any one of the carriers 3 and transfers it to the main transfer robot CR. The main transfer robot CR feeds the substrate W received from the indexer robot IR to any one of the liquid processing units M. The liquid processing unit M performs processing on the fed substrate W. Specifically, the liquid treatment unit M supplies a treatment liquid for film formation to the substrate W after performing a pre-cleaning treatment on the surface of the substrate, and forms a liquid film of the treatment liquid on the surface of the substrate W. The substrate W processed by the liquid processing unit M, that is, the substrate W having the processing liquid film formed on the surface thereof is sent out by the local transfer robot LR and transferred to the curing unit D disposed immediately above the substrate W. The curing unit D cures the liquid film of the surface treatment of the substrate W, thereby forming a cured film on the surface of the substrate W. The cured substrate W is transported to the liquid processing unit M by the local transport robot LR. The liquid processing unit M supplies a removal liquid to the substrate W to remove a cured film on the surface of the substrate W (removal process), and further performs a post-cleaning process. Then, the substrate W is sent out from the liquid processing unit M by the main transfer robot CR. The main transfer robot CR transfers the substrate W to the indexer robot IR. The indexer robot IR accommodates the transferred substrates W in any carrier 3.
The substrate W processed by the curing unit D may be transported by the main transport robot CR. That is, the main transfer robot CR may send the substrate W processed by the curing unit D out of the curing unit D and into any one of the liquid processing units M to perform the removal process. At this time, the liquid processing unit M that supplies the processing liquid for film formation to the substrate W and the liquid processing unit M that performs the removal processing may be different liquid processing units.
The indexer robot IR may also act as follows: the unprocessed substrates W are transferred to the main transfer robot CR, and the processed substrates W are received from the main transfer robot CR immediately before, immediately after, or simultaneously with the transfer. Similarly, the main transfer robot CR may operate as follows: the unprocessed substrates W are received from the indexer robot IR, and the processed substrates W are transferred to the indexer robot IR immediately before, immediately after, or simultaneously with the reception. Further, the main transfer robot CR may operate as follows: the unprocessed substrate W is fed into the liquid processing unit M, and the processed substrate W (post-cleaning processed substrate W) is fed out from the liquid processing unit M immediately before or immediately after the feeding.
As described above, in the present embodiment, one curing unit D corresponds to one liquid processing unit M. Then, the liquid treatment unit M is laminated with the curing unit D. Further, one local transfer robot LR is provided for one pair of the liquid processing unit M and one curing unit D, and the local transfer robot LR can access the liquid processing unit M and the curing unit D. The partial transfer robot LR feeds the substrate W processed by the liquid processing unit M from the liquid processing unit M, and transfers the substrate W to the curing unit D corresponding to the liquid processing unit M, thereby feeding the substrate W to the curing unit D. Specifically, the local transfer robot LR transfers the substrate W taken out from the liquid processing unit M in the vertical direction (more specifically, upward). The partial transfer robot LR feeds the substrate W processed by the curing unit D out of the curing unit D and transfers the substrate W to the liquid processing unit M corresponding to the curing unit D, thereby feeding the substrate W to the liquid processing unit M. Specifically, the partial transfer robot LR transfers the substrate W taken out from the curing unit D in the vertical direction (more specifically, downward). The main transfer robot CR transfers the unprocessed substrate W to the liquid processing unit M, and transfers the processed substrate W from the liquid processing unit M.
In this embodiment, the liquid processing unit M may have a function as a removal processing unit.
Fig. 2 is a schematic cross-sectional view for explaining a structural example of the liquid processing unit M. The liquid treatment unit M has a treatment chamber 11. The processing chamber 11 is an example of a processing chamber that forms a processing liquid film on the surface of the substrate W, and is also an example of a removal chamber that removes a cured film on the surface of the substrate W. In the processing chamber 11, a spin chuck 12 as a substrate holding means for holding the substrate W horizontally and rotatably, a cup (cup) 13 surrounding the spin chuck 12, a chemical liquid nozzle 14, a film forming processing liquid nozzle 15 as a processing liquid ejecting means, a removing liquid nozzle 16 as a removing liquid ejecting means, a cleaning nozzle 29, and a blocking plate 19 are provided. The spin chuck 12 is rotated about a vertical rotation axis 18 by a motor 17 as an example of a substrate rotation unit.
The chemical liquid nozzle 14 is connected to a chemical liquid pipe 21. A chemical valve 22 for opening and closing a chemical passage is inserted in the middle of the chemical pipe 21. The chemical liquid is supplied from the chemical liquid supply source 23 to the chemical liquid pipe 21. Examples of the chemical solution include HF (hydrogen fluoride: hydrofluoric acid), SC1 (ammonia peroxide mixture: ammonia hydrogen peroxide water), SC2 (hydrochloric peroxide mixture: hydrochloric acid hydrogen peroxide water), SPM (sulfuric peroxide mixture: sulfuric acid hydrogen peroxide water), phosphoric acid, fluoronitric acid, FPM (fluoric peroxide mixture: fluoric acid hydrogen peroxide water), FOM (fluoric ozone mixture: fluoric acid ozone water), and AOM (ammonia ozone mixture: ammonia ozone water). The chemical nozzle 14 may be a movable nozzle that is movable above the substrate W held by the spin chuck 12. The chemical liquid nozzle 14 of fig. 2 is provided separately from the blocking plate 19, but the chemical liquid nozzle may be assembled to the blocking plate 19.
The film forming processing liquid nozzle 15 is connected to a film forming processing liquid pipe 26. A film forming process liquid valve 27 for opening and closing a film forming process liquid passage is inserted in the middle of the film forming process liquid pipe 26. The film forming processing liquid is supplied from the film forming processing liquid supply source 28 to the film forming processing liquid piping 26. The film formation processing liquid is a liquid that can be cured by a predetermined curing process such as heating or pressure reduction to form a cured film, and can be removed by a predetermined removal liquid. Specifically, as the film forming treatment liquid, a surface coating liquid, a resist liquid, a phenol resin liquid, or the like can be used. The surface coating liquid is a liquid for forming a protective film formed on a resist film. The film formation processing liquid nozzle 15 may be a movable nozzle that is movable above the substrate W held by the spin chuck 12.
The liquid removal nozzle 16 is connected to a liquid removal pipe 101. A removal liquid valve 102 for opening and closing a removal liquid passage is inserted in the middle of the removal liquid pipe 101. The removing liquid is supplied from the removing liquid supply source 103 to the removing liquid pipe 101. The removing liquid is a liquid capable of removing a cured film formed by curing the film forming processing liquid. Specifically, an alkaline developer or SC1 (ammonia hydrogen peroxide water) may be used as the removing liquid. The alkaline developer may also include aqueous ammonia, TMAH (tetramethylammonium hydroxide: aqueous tetramethyl ammonium hydroxide), aqueous choline (choline), and the like. The liquid removal nozzle 16 may be a movable nozzle that is movable above the substrate W held by the spin chuck 12.
The cleaning nozzle 29 is connected to a cleaning liquid pipe 31A and an organic solvent pipe 31B. More specifically, in this embodiment, the cleaning liquid pipe 31A is coupled to the cleaning nozzle 29, and the organic solvent pipe 31B merges with the cleaning liquid pipe 31A. A cleaning liquid valve 32A for opening and closing the cleaning liquid passage is inserted in the middle of the cleaning liquid piping 31A. An organic solvent valve 32B for opening and closing the organic solvent passage is inserted in the middle of the organic solvent pipe 31B. The cleaning liquid is supplied from the cleaning liquid supply source 33A to the cleaning liquid pipe 31A. In this embodiment, the cleaning solution is DIW (deionized water). Of course, other cleaning fluids such as carbonated water may be used. The organic solvent is supplied from the organic solvent supply source 33B to the organic solvent pipe 31B. The organic solvent is one example of a low surface tension liquid having a surface tension smaller than that of the cleaning liquid. In this embodiment, the cleaning liquid and the organic solvent are supplied from the common nozzle 29 through the pipe 31A, but separate pipes and nozzles for supplying the cleaning liquid and the organic solvent may be provided.
The organic solvent is an organic solvent capable of being replaced with a cleaning liquid, and more specifically, an organic solvent having affinity with water. Examples of such organic solvents include isopropyl alcohol (isopropyl alcohol, IPA), methanol, ethanol, butanol, acetone, PGMEA (propylene glycol monomethyl ether acetate: propylene glycol methyl ether acetate), EGMEA (ethylene glycol monoethyl ether acetate: ethylene glycol methyl ether acetate), and the like.
The blocking plate 19 has an opposing surface 19a opposing the upper surface of the substrate W held by the spin chuck 12. The blocking plate 19 is driven by a blocking plate driving unit 20. The blocking plate driving unit 20 includes a blocking plate lifting unit 20A and a blocking plate rotating unit 20B. The blocking plate lifting unit 20A moves the blocking plate 19 up and down so as to bring the opposing surface 19a closer to or farther from the substrate W held on the spin chuck 12. The blocking plate rotation unit 20B rotationally drives the blocking plate 19 so that the blocking plate 19 rotates about the rotation axis 18 common to the spin chuck 12. More specifically, the blocking plate rotating unit 20B applies a rotational force to the rotating shaft 25 supporting the blocking plate 19. A cleaning nozzle 29 is disposed at the center of the facing surface 19a of the blocking plate 19, that is, on the rotation axis 18. The rotation shaft 25 is a hollow shaft, and a cleaning liquid pipe 31A is inserted therein.
An opening 19b exposing the cleaning nozzle 29 downward is formed in the center of the facing surface 19a. The opening 19b communicates with the inner space of the rotation shaft 25. An inert gas flow path 45 for flowing inert gas is formed between the cleaning liquid pipe 31A and the inner wall of the rotary shaft 25. An inert gas pipe 46 is connected to the inert gas flow path 45. An inert gas valve 47 for opening and closing a flow path is inserted in the middle of the inert gas pipe 46. The inert gas pipe 46 is connected to an inert gas supply source 48. The inert gas supply source 48 supplies inert gas. The inert gas is a gas that is inert to the material on the surface of the substrate W, and may be nitrogen, for example. When the chemical liquid nozzle is assembled to the blocking plate 19, the chemical liquid pipe is inserted into the rotary shaft 25, and the opening 19b is exposed downward by the chemical liquid nozzle.
The blocking plate lifting unit 20A moves the blocking plate 19 up and down to simultaneously lift and lower the cleaning nozzle 29, thereby varying the height from the substrate W held on the spin chuck 12 to the cleaning nozzle 29.
The rotation shaft 130 of the spin chuck 12 is constituted by a hollow shaft. The rear nozzle 131 is inserted into the rotary shaft 130. The rear nozzle 131 has an upper end formed with a discharge port 132 for discharging the cleaning liquid toward the rotation center of the lower surface of the substrate W. The back nozzle 131 is coupled with a cleaning liquid supply pipe 133. The cleaning liquid supply pipe 133 is coupled to a cleaning liquid supply source 135 via a cleaning liquid valve 134, and is coupled to an organic solvent supply source 137 via an organic solvent valve 136. The cleaning liquid supply source 135 supplies DIW or other cleaning liquid. The organic solvent supply source 137 supplies IPA or other organic solvents.
An inert gas flow path 140 for supplying inert gas to the lower surface of the substrate W is formed in a space between the rear nozzle 131 and the rotation shaft 130. The inert gas supply pipe 141 is connected to the inert gas flow path 140. An inert gas valve 142 is inserted in the middle of the inert gas supply pipe 141. The inactive gas supply pipe 141 is connected to an inactive gas supply source 143. The inert gas supply source 143 supplies inert gas. The inert gas is a gas that is inert to the material constituting the substrate W, and may be nitrogen, for example.
A substrate carry-in/carry-out opening 37 for carrying in/out the substrate W by the main transfer robot CR and a substrate carry-in/carry-out opening 38 for carrying in/out the substrate W by the partial transfer robot LR are formed in the side walls 35 and 36 of the processing chamber 11, respectively. On the substrate carry-in/out opening 37 and the substrate carry-in/out opening 38, shutters 39, 40 for opening and closing the openings are respectively arranged. The barrier driving units 41, 42 drive the barriers 39, 40 to open and close, respectively. The substrate in/out opening 37 is an opening for communicating the main transfer chamber 5 with the processing chamber 11, and is formed in a side wall 35 for dividing the main transfer chamber 5 from the processing chamber 11. The substrate in/out opening 38 is an opening for communicating the processing chamber 11 with the partial conveyance chamber C, and is formed in the side wall 36 for dividing the processing chamber 11 from the partial conveyance chamber C.
The operation of the liquid processing unit M is summarized as follows.
When the main transfer robot CR transfers an unprocessed substrate W, the shutter 39 opens the substrate transfer in/out opening 37. The hand HC (arm) of the main transfer robot CR holding an unprocessed substrate W enters the processing chamber 11 from the substrate in/out opening 37, and transfers the substrate W to the spin chuck 12. For transfer of the substrate W, the cup 13 or the spin chuck 12 may be moved up and down as necessary. The hand HC of the main transfer robot CR, which has transferred the substrate W to the spin chuck 12, is withdrawn from the process chamber 11 through the substrate in/out opening 37. Then, the shutter driving unit 41 drives the shutter 39, thereby closing the substrate carry-in/carry-out opening 37.
Then, the spin chuck 12 is rotated by the motor 17, and the chemical liquid valve 22 is opened. Thereby, the chemical solution is supplied to the surface of the substrate W in a rotating state, and the chemical solution is spread over the entire surface of the substrate W by centrifugal force. As described above, the chemical process (chemical process for pre-cleaning) of processing the substrate W with the chemical is performed. The chemical supply is stopped by closing the chemical valve 22, and the chemical process is ended.
After the chemical solution process, the cleaning solution valves 32A and 134 are opened while the spin chuck 12 is continuously rotated. Thereby, the cleaning liquid is supplied to the front and back surfaces of the substrate W in a rotated state. The cleaning liquid supplied to the surface of the substrate W spreads over the entire area of the surface of the substrate W, thereby replacing the chemical liquid on the surface of the substrate W. In addition, the cleaning liquid supplied to the back surface of the substrate W spreads over the entire area of the back surface of the substrate W, and the cleaning liquid adhering to the back surface of the substrate W is rinsed off. As described above, the cleaning process is performed. The supply of the cleaning liquid is stopped by closing the cleaning liquid valve 32A, and the cleaning process is ended.
After the cleaning process is completed, or immediately before the cleaning process is completed, the organic solvent valve 32B is opened. Thereby, the organic solvent is supplied to the surface of the substrate W. The spin chuck 12 is maintained in a rotated state. Therefore, the organic solvent spreads over the entire area of the surface of the substrate W, thereby replacing the cleaning liquid on the surface of the substrate W. At this time, the blocking plate driving unit 20 lowers the blocking plate 19, and places it at a processing position where the opposing surface 19a is brought close to the surface of the substrate W.
Then, the organic solvent valve 32B is closed, and the blocking plate 19 is lifted. Then, the deposition processing liquid nozzle 15 is disposed above the substrate W, and in this state, the deposition processing liquid valve 27 is opened. Thereby, the film forming processing liquid is supplied to the surface of the substrate W. The spin chuck 12 is maintained in a rotated state. Therefore, the film formation processing liquid spreads over the entire surface of the substrate W, thereby forming the liquid film 10 over the entire surface of the substrate W. After forming the film formation process liquid film 10, the film formation process liquid valve 27 is closed.
Next, after the deposition processing liquid nozzle 15 is retracted, the blocking plate 19 is lowered, and is disposed at a processing position where the opposing surface 19a is brought close to the substrate W. Then, the organic solvent valve 136 is opened. Thereby, the organic solvent is supplied from the back nozzle 131 to the back surface (lower surface) of the substrate W, and the organic solvent spreads over the entire area of the back surface of the substrate W due to the centrifugal force, so that the film forming processing liquid adhering to the back surface of the substrate W is rinsed off.
Then, the organic solvent valve 136 is closed, accelerating the rotation of the spin chuck 12. This throws away the liquid component on the back surface of the substrate W. At this time, the inert gas valves 47 and 142 may be opened. Thereby, volatilization of the volatile components in the film formation process liquid film 10 is promoted on the front surface side of the substrate W, and thereby curing of the film formation process liquid film 10 is promoted. Further, drying is promoted on the back surface side of the substrate W.
Then, the shutter plate driving unit 20 retracts the shutter plate 19 to the upper side. Then, the rotation of the spin chuck 12 is stopped, and the process for forming the film forming process liquid film 10 is ended.
Next, the shutter driving unit 42 drives the shutter 40 to open the substrate carry-in/carry-out opening 38. The hand LH (arm) of the partial transfer robot LR enters the processing chamber 11 from the substrate carry-in/out opening 38, receives the substrate W from the spin chuck 12, and carries the substrate W out of the processing chamber 11 through the substrate carry-in/out opening 38. For transfer of the substrate W, the cup 13 or the spin chuck 12 may be moved up and down as necessary. The local transfer robot LR transfers the substrate W having the film forming process liquid film 10 formed on the surface thereof to the curing unit D.
After the film formation process liquid film 10 is cured by the curing unit D to form a cured film 10S, the substrate W on which the cured film 10S is formed is transported to the liquid processing unit M by the local transport robot LR. At this time, the shutter driving unit 42 drives the shutter 40, thereby opening the substrate carry-in/carry-out opening 38. The hand LH (arm) of the partial transfer robot LR enters the processing chamber 11 through the substrate in/out opening 38, transfers the substrate W to the spin chuck 12, and then withdraws from the processing chamber 11. For transfer of the substrate W, the cup 13 or the spin chuck 12 may be moved up and down as necessary.
The liquid processing unit M performs a removal process for removing the cured film 10S on the surface of the substrate W introduced in the above manner, and a subsequent cleaning process (post-cleaning process).
Specifically, the spin chuck 12 is rotated by the motor 17, and a removal liquid nozzle 16 is disposed above the substrate W held on the spin chuck 12 in order to perform the removal process. Then, the liquid removal valve 102 is opened. Thereby, the removal liquid is supplied to the surface of the substrate W, and the removal liquid spreads over the entire surface of the substrate W due to the centrifugal force. By the action of the removing liquid, the cured film 10S on the surface of the substrate W is peeled off.
Next, the liquid removal valve 102 is closed, and the liquid removal nozzle 16 is retracted from above the substrate W, and then a post-cleaning process is performed. Specifically, the chemical solution valve 22 is opened in a state where the chemical solution nozzle 14 is disposed above the substrate W and the spin chuck 12 is rotated. Thereby, the chemical solution is supplied to the surface of the substrate W in a rotated state, and the chemical solution is spread over the entire surface of the substrate W by centrifugal force. As described above, the chemical process (chemical process for post-cleaning) of processing the substrate W with the chemical is performed. The chemical supply is stopped by closing the chemical valve 22, and the chemical process is ended. The chemical nozzle 14 is retracted from above the spin chuck 12.
After the chemical solution process, the cleaning solution valves 32A and 134 are opened while the spin chuck 12 continues to rotate. Thereby, the cleaning liquid is supplied to the front and back surfaces of the substrate W in a rotated state. The cleaning liquid supplied to the surface of the substrate W spreads over the entire area of the surface of the substrate W, and the chemical liquid on the surface of the substrate W is replaced. In addition, the cleaning liquid supplied to the rear surface of the substrate W spreads over the entire area of the rear surface of the substrate W, and the cleaning liquid adhering to the rear surface of the substrate W is rinsed off. As described above, the cleaning process is performed. The supply of the cleaning liquid is stopped by closing the cleaning liquid valve 32A, and the cleaning process is ended.
After the cleaning process is completed, or immediately before the cleaning process is completed, the organic solvent valve 32B, 136 is opened. Thus, the organic solvent is supplied to the front and rear surfaces of the substrate W. The spin chuck 12 is maintained in a rotated state. Therefore, the organic solvent spreads over the entire surface and back surface of the substrate W, and the cleaning liquid on the surface and back surface of the substrate W is replaced. At this time, the blocking plate driving unit 20 lowers the blocking plate 19, and places it at a processing position where the opposing surface 19a is brought close to the surface of the substrate W.
Next, the organic solvent valves 32B and 136 are closed, and instead, the inert gas valves 47 and 142 are opened to supply inert gas to the front and rear surfaces of the substrate W. In addition, the rotation of the spin chuck 12 is accelerated. This throws away the liquid components on the front and back surfaces of the substrate W. The inactive gas supplied to the front surface and the back surface of the substrate W promotes drying of the substrate W.
When the drying process is completed, the rotation of the spin chuck 12 is stopped, and the inert gas valves 47 and 142 are closed. Then, the shutter plate driving unit 20 retracts the shutter plate 19 to the upper side.
Next, the shutter driving unit 41 drives the shutter 39, thereby opening the substrate carry-in/carry-out opening 37. The hand HC (arm) of the main transfer robot CR enters the processing chamber 11 from the substrate in/out opening 37, receives the substrate W from the spin chuck 12, and sends the substrate W out of the processing chamber 11 through the substrate in/out opening 37. For transfer of the substrate W, the cup 13 or the spin chuck 12 may be moved up and down as necessary.
The removal of the cured film 10S on the substrate W may be performed by the chemical supplied from the chemical nozzle 14 according to the type of the cured film 10S. That is, the chemical supplied from the chemical nozzle 14 may be used as the removing liquid. In this case, the liquid removal nozzle 16 and the structure related to the liquid removal nozzle 16 can be omitted, and the removal process and the post-cleaning process do not need to be distinguished.
The pre-cleaning step before forming the film formation process liquid film 10 may be omitted.
When the chemical nozzle is assembled to the blocking plate 19, the blocking plate 19 is always positioned at a close position to the substrate W during processing.
Fig. 3 is a schematic cross-sectional view for explaining a structural example of the curing unit D. The curing unit D has a curing chamber 51 including a sealable depressurization chamber (vacuum chamber). The volume of the curing chamber 51 is smaller than the volume of the processing chamber 11 of the liquid processing unit M, and thus the curing chamber 51 has a structure capable of efficiently depressurizing the internal space. In the curing chamber 51, a substrate holder 52 as a substrate holding unit that holds the substrate W is arranged. The substrate holder 52 incorporates therein a heater 53H as a substrate heating means and a cooling means 53C as a substrate cooling means, thereby constituting a temperature adjustment plate. The heater 53H heats the substrate W by heat transfer or heat radiation. Instead of the heater 53H, an electromagnetic wave irradiation unit that irradiates electromagnetic waves (ultraviolet rays, infrared rays, microwaves, laser light, etc.) to heat the substrate may be used as the substrate heating unit. In addition, a flash lamp (flash lamp) may be used as the substrate heating unit. The cooling unit 53C may have a refrigerant passage passing through the inside of the substrate holder 52 or may have an electronic cooling and heating element.
A plurality of (3 or more) lift pins (lift pins) 54 are disposed through the substrate holder 52. The lift pins 54 are moved up and down by the lift pin lifting units 55, thereby moving the substrate W up and down on the substrate holder 52.
The curing chamber 51 includes a base portion 511 and a movable cover portion 512 that is movable up and down with respect to the base portion 511. The movable cover 512 is moved up and down with respect to the base 511 by the cover driving unit 56. A curing space 50 is defined between the base portion 511 and the movable cover portion 512. The lower end edge 58 of the movable cover 512 is formed along a plane corresponding to the upper surface 59 of the base 511. An O-ring 60 as a sealing member is disposed on the base portion 511 at a position facing the lower end edge 58 of the movable cover portion 512. When the movable cover 512 is brought close to the base 511 and the movable cover 512 is pressed against the base 511, the space between the movable cover 512 and the base 511 is sealed by the O-ring 60. As described above, the sealed curing process space 50 is formed.
An exhaust pipe 62 is coupled to the base 511. The exhaust pipe 62 communicates with the curing process space 50. The exhaust pipe 62 is connected to an exhaust unit 63 such as a vacuum pump. An exhaust valve 64 is inserted into the exhaust pipe 62. The evacuation unit 63 is an example of a pressure reducing unit, and the evacuation unit 63 is driven by opening the evacuation valve 64, so that the curing process space 50 can be reduced in pressure to a pressure lower than the atmospheric pressure (for example, 0.01Torr or less).
The movable cover 512 is provided with an inert gas nozzle 71 for introducing inert gas into the curing process space 50. An inert gas pipe 72 is connected to the inert gas nozzle 71. An inert gas valve 73 is inserted in the middle of the inert gas pipe 72. The inert gas pipe 72 is connected to an inert gas supply source 74 for supplying inert gas. The inert gas is one example of a low-humidity gas, and the inert gas nozzle 71 and the like are one example of a low-humidity gas supply unit. For example, by supplying the inert gas from the inert gas nozzle 71 in advance before the substrate W is fed into the curing process space 50, the interior of the curing chamber 51 can be ventilated, and an ambient gas in which the film forming processing liquid 10 is easily dried can be formed.
The operation of the curing unit D is summarized as follows.
The hand LH of the local transfer robot LR feeds the substrate W in a state where the film formation process liquid film 10 is formed on the surface thereof into the curing unit D. When the substrate W is fed, the movable cover portion 512 is located at an open position away from the base portion 511, whereby a substrate feeding opening is formed between the movable cover portion 512 and the base portion 511. At this time, the lift pins 54 are located at a raised position with their tips spaced upward from the surface of the substrate holder 52. In this state, the hand LH of the partial transfer robot LR enters between the movable cover 512 and the base 511, and transfers the substrate W to the lift pins 54. The lift pins 54, which receive the substrate W, are lowered, and the substrate W is placed on the upper surface of the substrate holder 52.
The cover driving unit 56 lowers the movable cover 512 and presses the movable cover to the base 511 via the O-ring 60. Thereby, the curing process space 50 becomes a closed space. Further, the exhaust valve 64 is opened to drive the exhaust unit 63, thereby exhausting the ambient gas in the curing process space 50 and depressurizing the curing process space 50. The inert gas valve 73 is closed so as not to obstruct the depressurization.
The evaporation of the film formation process liquid film 10 on the surface of the substrate W is promoted by depressurizing the inside of the curing process space 50. Further, the heater 53H is driven to heat the substrate holder 52, thereby performing a baking (rake) process. As described above, the film formation process liquid film 10 is rapidly cured by simultaneously reducing the pressure of the ambient gas of the substrate W and heating the substrate W. The term "curing" as used herein means solidification or hardening, and may be solidification or hardening by evaporating solvent components in the film formation treatment liquid and drying the solvent components, or solidification or hardening by binding molecules in the film formation treatment liquid to each other and polymerizing the molecules. When the volume shrinkage occurs during the curing, a force acts on foreign matter such as particles adhering to the surface of the substrate W, and the foreign matter is detached from the surface of the substrate W.
After the curing of the film formation process liquid film 10 is completed, the exhaust unit 63 is stopped, and the inert gas valve 73 is opened as necessary, so that the inside of the curing process space 50 is pressurized to the atmospheric pressure. Then, the stop heater 53H is driven, and instead, the cooling unit 53C is operated, thereby cooling the substrate holder 52. This cools the substrate W to room temperature, for example. Then, the cover driving unit 56 lifts the movable cover 512 away from the base portion 511. Further, the lift pins 54 are lifted up to a height away from the upper surface of the substrate holder 52. In this state, the hand LH of the partial transfer robot LR enters between the movable cover 512 and the base 511, and the processed substrate W is taken out from the lift pins 54 and is withdrawn to the partial transfer chamber C. When the main transfer robot CR transfers the cured substrate W, the hand HC of the main transfer robot CR enters between the movable cover portion 512 and the base portion 511, and the processed substrate W is taken out from the lift pins 54 and is withdrawn to the main transfer chamber 5.
Fig. 4 is a diagram for explaining a configuration example of the local transfer robot LR. The local conveyance robot LR is disposed in the local conveyance chamber C. The partial conveyance chamber C is opposed to the processing chamber 11 of the liquid processing unit M and the curing chamber 51 of the curing unit D disposed above the processing chamber 11, and communicates with the curing chamber 51 when the curing chamber 51 is opened.
The partial transfer robot LR includes a hand LH (arm) for holding the substrate W, and a hand driving unit 90 for driving the hand LH. In this example, the hand LH includes a pair of hands LH1, LH2, which are arranged so as to be offset in the up-down direction (and further, if necessary, in the horizontal direction). The hand driving unit 90 horizontally moves and vertically moves the hands LH1 and LH2, and further rotates the hands LH1 and LH2 around the vertical rotation axis 89 as needed.
Thus, the hands LH1, LH2 can enter the process chamber 11 of the liquid process unit M and receive the substrate W from the spin chuck 12, transport the substrate W to the curing unit D, send the substrate W into the curing chamber 51 to be transferred to the lift pins 54 (see fig. 3), and then exit to the partial transport chamber C. In addition, the hands LH1, LH2 may enter the curing chamber 51 of the curing unit D and receive the substrate W from the lift pins 54, transfer the substrate W to the liquid processing unit M, and send the substrate W into the processing chamber 11 to be transferred to the spin chuck 12, and then exit to the partial transfer chamber C.
The hand driving unit 90 can advance and retract the pair of hands LH1 and LH2 independently of the liquid processing unit M and the curing unit D at least when accessing these units. For example, it may be: the hand LH1 is used when the substrate W on which the film formation processing liquid film 10 is formed is transported from the liquid processing unit M to the curing unit D, and the hand LH2 is used when the substrate W on which the cured film 10S is formed is transported from the curing unit D to the liquid processing unit M. In this case, in view of the drip from the film formation processing liquid film 10, it is preferable that the hand LH2 holding the substrate W processed by the curing unit D is disposed above the hand LH1 holding the substrate W on which the film formation processing liquid film 10 is formed.
The curing unit D is disposed above the liquid processing unit M, and therefore the local transfer robot LR operates as follows: after the substrate W is sent out from the liquid processing unit M, the hand LH is raised to the height of the curing unit D. The local transfer robot LR operates as follows: after the substrate W is sent out from the curing unit D, the hand LH is lowered to the height of the liquid processing unit M.
The local transfer robot LR may further include a hand heating unit 97A (arm heating unit), and the hand heating unit 97A (arm heating unit) may heat the hand LH1 to keep the temperature or heat the substrate W on which the film formation processing liquid film 10 is formed by the liquid processing unit M. The hand heating unit 97A may be configured to circulate the heat medium through the heat medium passage 98A formed in the hand LH 1. Instead of having such a structure of the heat medium passage 98A, a heater (not shown) for heating the hand LH1 may be provided in the hand LH 1. The hand heating unit 97A may be configured to heat a heating plate 99A provided in the local conveyance chamber C. At this time, the hand LH1 is brought into contact with the heating plate 99A during the period in which the substrate W is not held by the hand LH 1. Thereby, the hand LH1 is heated during the non-operation of the hand LH 1. By transporting the substrate W by the heated hand LH1, the substrate W can be heated during the transportation, and thus the film formation process liquid film 10 can be dried and cured.
The partial transfer robot LR may further include a hand cooling unit 97B (arm cooling unit), and the hand cooling unit 97B (arm cooling unit) may cool the hand LH2 to cool the substrate W on which the cured film 10S is formed by the curing unit D. The hand cooling unit 97B may be configured to circulate the refrigerant in the refrigerant passage 98B formed in the hand LH 2. Instead of having the refrigerant passage 98B, the hand LH2 may have an electronic cooling/heating element (not shown) for cooling the hand LH 2. The hand cooling unit 97B may be configured to cool the cooling plate 99B provided in the partial conveyance chamber C. At this time, the hand LH2 is brought into contact with the cooling plate 99B during a period in which the hand LH2 is not holding the substrate W. Thereby, the hand LH2 is cooled during the non-operation of the hand LH 2. By transporting the substrate W by the cooled hand LH2, the substrate W can be cooled during the transport, and therefore the sufficiently cooled substrate W can be sent to the liquid processing unit M. Further, the cooling treatment time in the solidifying unit D can be shortened.
In order to effectively heat and cool the substrate W held by the hands LH1 and LH2, the hands LH1 and LH2 may be formed in a plate shape corresponding to the shape of the substrate W. Such plate-like hands LH1, LH2 may have a notched plate shape with notches formed around the periphery thereof for avoiding chuck pins (chuck pins) provided in the spin chuck 12 in order to transfer the substrate W to and from the spin chuck 12.
For example, as shown in fig. 4, a cleaning liquid nozzle 91 that supplies a cleaning liquid for cleaning the hand LH may be disposed on the hand LH (or an active portion where the relative position to the hand LH does not change significantly regardless of the movement of the hand LH) of the local transfer robot LR. The cleaning liquid nozzle 91 is connected to a cleaning liquid pipe 92. A cleaning liquid valve 93 is inserted into the cleaning liquid pipe 92. The cleaning liquid pipe 92 is connected to a cleaning liquid supply source 94. The cleaning liquid supply source 94 supplies cleaning liquid for cleaning the hand LH. Preferably, the cleaning liquid is a liquid having affinity with the film-forming treatment liquid, for example, an organic solvent.
As shown in fig. 4, instead of the cleaning liquid nozzle 91 provided in the hand LH, a cleaning liquid nozzle 91A may be provided in the local transport chamber C in addition to the cleaning liquid nozzle 91.
During the period when the partial transfer robot LR is not transferring the substrate W, the cleaning liquid valve 93 is opened, so that the cleaning liquid is discharged from the cleaning liquid nozzles 91 and 91A, and the hand LH is cleaned by the cleaning liquid. This can remove the film forming treatment liquid or other substances adhering to the hand LH, in particular, and keep the hand LH in a clean state.
The bottom 160 of the partial shipment chamber C receives the cleaning liquid. A drain pipe 161 as a drain unit is connected to the bottom 160. The cleaning liquid received by the bottom 160 is discharged through the liquid discharge pipe 161.
An inert gas nozzle 165 for supplying inert gas into the local transfer chamber C may be provided. An inert gas pipe 166 is connected to the inert gas nozzle 165. An inert gas valve 167 is inserted in the middle of the inert gas pipe 166. An inert gas supply source 168 is connected to the inert gas pipe 166. The inert gas supply source 168 supplies nitrogen or other inert gas. By opening the inert gas valve 167, inert gas can be supplied into the local transfer chamber C. This can promote drying of the hand LH after washing. Further, since the inert gas can be supplied to the vicinity of the substrate W held by the hand LH, the film formation processing liquid film 10 on the substrate W held by the hand LH1 can be dried, in particular, and the curing can be promoted.
The inert gas nozzle 165 may be disposed on the hand LH (or an active portion where the relative position to the hand LH does not change significantly regardless of the movement of the hand LH). Thus, the inert gas can be efficiently supplied to the hand LH and the surface of the substrate W held by the hand LH.
When the substrate W processed by the curing unit D is sent out by the main transfer robot CR, the partial transfer robot LR may have a hand LH1 and a structure related to the hand LH 1. That is, the hand LH2 and the structure related to the hand LH2 can be omitted.
In addition, when the substrate W processed by the curing unit D is transported by the partial transport robot LR, the hand LH2 and the structure related to the hand LH2 may be omitted. That is, the same hand LH1 may be used to transport the substrate W on which the film formation process liquid film 10 is formed and transport the substrate W on which the cured film 10S is formed. At this time, after the substrate W is transferred from the liquid processing unit M to the curing unit D, the hand LH1 may be cleaned, and then the substrate W having the cured film 10S formed on the surface thereof may be transferred from the curing unit D to the liquid processing unit M by the hand LH 1.
As described above, according to this embodiment, after the film forming process liquid film 10 is formed on the substrate W in the process chamber of the liquid processing unit M, the substrate W is sent to the curing chamber 51 of the curing unit D by the local transfer robot LR. Therefore, the main transfer robot CR can be prevented from being contaminated by the film formation processing liquid, and therefore transfer of the film formation processing liquid to another substrate transferred by the main transfer robot CR can be suppressed or prevented. In addition, since the atmosphere of the film formation processing liquid can be suppressed or prevented from being trapped in the space where the substrate W is transported by the main transport robot CR, adverse effects of the atmosphere of the film formation processing liquid on the substrate W can be avoided. In this way, the substrate processing quality can be improved. Further, the substrate W can be rapidly transported from the processing chamber 11 to the curing chamber 51 by the local transport robot LR regardless of the operation state of the main transport robot CR. Therefore, the conveyance time can be shortened.
In particular, in this embodiment, the main transfer robot CR is disposed in the main transfer chamber 5, and the partial transfer robot LR is disposed in the partial transfer chamber C isolated from the main transfer chamber 5. This can more reliably prevent the main transfer chamber 5 from being covered with the ambient gas of the film formation processing liquid, and thus can prevent the substrate W transferred by the main transfer robot CR from being affected by the ambient gas of the film formation processing liquid.
In this embodiment, the curing unit D depressurizes the processing space 50 in the curing chamber 51 and heats the substrate W with the heater 53H, thereby curing the film forming process liquid film 10 on the substrate W. Therefore, the film formation process liquid film 10 can be rapidly cured, and the cured film 10S can be formed. In this process, the film formation process liquid film 10 is solidified and volume-contracted. Thereby, the tensile force acts on the foreign matter such as particles on the surface of the substrate W, and the foreign matter can be peeled off from the surface of the substrate W.
The liquid processing unit M has a spin chuck 12 and a blocking plate 19 in the processing chamber 11, and has a relatively large volume. Therefore, it is not practical to decompress the space in the process chamber 11 to dry the film forming process liquid film 10, and it takes a long time to decompress the large-volume space, if any. In contrast, in this embodiment, the substrate W after the completion of the processing in the liquid processing unit M is fed into the curing chamber 51 having a smaller volume, and the reduced pressure drying process in the curing chamber 51 is performed. This can cure the film formation process liquid film 10 in a short time.
The substrate W on which the cured film 10S is formed is sent from the curing chamber 51 to the processing chamber 11 of the liquid processing unit M by the local transfer robot LR or the main transfer robot CR. At this time, the liquid treatment unit M functions as a removal unit for removing the cured film 10S, and the treatment chamber 11 functions as a removal chamber for providing a space for performing the removal treatment. The liquid processing unit M supplies a removing liquid to the substrate W to remove the cured film 10S on the substrate W. At this time, the cured film 10S swells due to the removal liquid, and thus expands in volume. Thereby, the tensile force acts on the foreign matter on the surface of the substrate W, and the foreign matter is peeled off from the surface of the substrate W. The peeled foreign matter is discharged to the outside of the substrate W together with the cured film 10S. In this way, the cleaning process for removing the foreign matter on the surface of the substrate W is achieved.
When the partial transfer robot LR sends out the substrate W, which has finished the curing process in the curing unit D, from the curing chamber 51 and sends it into the processing chamber 11 of the liquid processing unit M to perform the removal process, it is possible to avoid the main transfer robot DR from being affected by the substrate W after the curing process. Particularly, when the substrate W processed by the curing unit D is at a high temperature, the main transfer robot CR can be prevented from accumulating heat generated from the high-temperature substrate W. This can suppress or prevent the influence of heat from affecting the substrate W transported by the main transport robot CR.
In this embodiment, the partial transfer robot LR has a pair of hands LH1 and LH2, and the substrate W is transferred from the processing chamber 11 to the curing chamber 51 by the hand LH1 as the first transfer arm, and the cured substrate W is transferred from the curing chamber 51 to the processing chamber 11 by the hand LH2 as the second transfer arm, so that the substrate W is removed. Therefore, even if the film forming processing liquid adheres to the hand LH1, transfer of the processing liquid to the substrate W after the curing process can be suppressed or prevented. In this embodiment, since the hand LH2 is disposed above the hand LH1, the deposition of the film formation processing liquid on the substrate W held by the hand LH1 on the hand LH2 can be more reliably suppressed or prevented.
In this embodiment, the cleaning liquid nozzles 91 and 91A are provided in the partial conveyance chamber C, and the cleaning liquid is ejected from the cleaning liquid nozzles 91 and 91A to clean the hand LH. This can keep the hand LH in a clean state, and therefore, the substrate W can be conveyed while preventing contamination of the substrate W by the hand LH. Further, since the cleaning of the hand LH is performed in the partial transfer chamber C, the influence of the cleaning liquid or the film forming processing liquid on the substrate W transferred by the main transfer robot CR can be suppressed or prevented.
In particular, when the cleaning liquid nozzle 91 is provided on the hand LH (or a movable portion where the relative position to the hand LH does not change significantly regardless of the movement of the hand LH) of the local transfer robot LR, the hand LH can be cleaned more reliably. Therefore, contamination of the film forming processing liquid and the like is prevented from accumulating on the hand LH, and the substrate W can be conveyed while suppressing contamination caused by the film forming processing liquid. In addition, the influence of the cleaning liquid or the film formation processing liquid on the substrate W transported by the main transport robot CR can be suppressed or prevented.
In this embodiment, the partial conveyance chamber C includes a bottom 160 that receives the cleaning liquid, and a drain pipe 161 that discharges the cleaning liquid received by the bottom 160. This can discharge the cleaning liquid after cleaning the hand LH to the outside of the local transport chamber C, and thus can keep the ambient gas in the local transport chamber C clean. This can further suppress the influence of the film formation processing liquid ambient gas on the substrate W.
The substrate processing method performed by this embodiment includes: a process liquid film forming step of supplying a film forming process liquid to the surface of the substrate W in the process chamber 11 to form a film forming process liquid film 10 on the surface of the substrate W; a first partial conveyance step of conveying the substrate W to the curing chamber 51 after the process liquid film forming step; a cured film forming step of forming a cured film 10S on the surface of the substrate W by curing the film forming process liquid film 10 in the curing chamber 51; a second partial conveyance step of conveying the substrate W to a processing chamber 11 as a removal chamber after the cured film formation step; a removal processing step of supplying a removal liquid for removing the cured film 10S to the surface of the substrate W in the processing chamber 11 (removal chamber); and a main transfer step of transferring the unprocessed substrate W into the processing chamber 11 by the main transfer robot CR, and transferring the substrate W from the processing chamber 11 (removal chamber) after the removal processing step.
In this embodiment, the cured film forming step includes a heating step of heating the substrate W by the heater 53H as a heating means. The cured film forming step includes a depressurizing step of depressurizing the curing processing space 50 of the processing substrate W.
In the main transport step, the substrate W is transported by the main transport chamber 5, and in the first partial transport step, the substrate W is transported by the partial transport chamber C isolated from the main transport chamber 5.
The first partial shipment step and the second partial shipment step are sometimes performed by a common partial shipment robot LR. At this time, the first partial conveyance process is performed by the hand LH1 of the partial conveyance robot LR, and the second partial conveyance process is performed by the hand LH2 of the partial conveyance robot LR.
In some cases, the first partial conveyance step is performed by the partial conveyance robot LR, and the second partial conveyance step is performed by the main conveyance robot CR.
The substrate processing method according to the above embodiment includes a hand cleaning step (arm cleaning step) of supplying a cleaning liquid to the hand LH of the local transfer robot LR.
The process liquid film forming step and the removal step may be performed in a common process chamber 11. In addition, when the treatment liquid film forming step and the removal treatment step are performed in different liquid treatment units M, these treatments are performed in different chambers.
Second embodiment
Fig. 5A is a schematic plan view for explaining the structure of a substrate processing apparatus 1A according to a second embodiment of the present invention, and fig. 5B is an elevation view thereof. In fig. 5A and 5B, the same reference numerals are given to the corresponding parts of the respective parts in fig. 1A and 1B.
In this embodiment, a local conveyance chamber C is arranged between the two laminated unit groups G1 and G2 arranged on one side of the main conveyance chamber 5 in a plan view, and a local conveyance robot LR is arranged in the local conveyance chamber C. Similarly, a local conveyance chamber C is disposed between the two stacked cell groups G3 and G4 disposed on the other side of the main conveyance chamber 5, and a local conveyance robot LR is disposed in the local conveyance chamber C. The lamination state of the plurality of cells constituting the laminated cell groups G1 to G4 is the same as that of the first embodiment.
The main transfer robot CR can access a total of 8 liquid processing units M to transfer the substrate W, and can transfer the substrate W to and from the indexer robot IR, as in the case of the first embodiment. The liquid processing unit M may be configured to be able to access a total of 8 curing units D to take out the substrate W.
In the present embodiment, the local transfer robots LR are provided in two in the first layer S1 and in two in the second layer S2. More specifically, in the first floor S1, one local transfer robot LR11, LR12 is disposed on each side of the main transfer chamber 5 in a plan view. More specifically, one local transfer robot LR11 is disposed between the liquid processing units M11 and M12 in the first floor S1 on one side of the main transfer chamber 5. Similarly, one local transfer robot LR12 is disposed between the liquid processing units M13 and M14 on the other side of the main transfer chamber 5. The two partial transfer robots LR21, LR22 in the second floor S2 are also arranged in the same manner. The local conveyance robots LR11, LR12, LR21, LR22 are disposed in the local conveyance chambers C11, C12, C21, C22, respectively. The partial conveyance chamber C is formed with a conveyance space that is divided into separate (isolated) from the main conveyance chamber 5.
In the first floor S1, the local conveyance robot LR11 disposed on one side of the main conveyance chamber 5 is shared by the two liquid processing units M11 and M12.
That is, the partial transfer robot LR11 takes out the substrate W that has been processed in the liquid processing unit M11 on the side close to the carrier holding portion 2, transfers it in the vertical direction (more specifically, upward), and sends it to the curing unit D11 above the liquid processing unit M11. The partial transfer robot LR11 takes out the substrate W that has been processed in the liquid processing unit M12 on the side far from the carrier holding portion 2, transfers the substrate W in the vertical direction (more specifically, upward), and sends the substrate W to the curing unit D12 above the liquid processing unit M12.
The partial transfer robot LR11 may transfer the substrate W, which has been processed in the liquid processing unit M11 on the side close to the carrier holding portion 2, to the curing unit D12 above the liquid processing unit M12 on the side away from the carrier holding portion 2. Similarly, the partial transfer robot LR11 may transfer the substrate W, which has been processed in the liquid processing unit M12 on the side away from the carrier holding portion 2, to the curing unit D11 above the liquid processing unit M11 on the side close to the carrier holding portion 2.
More generally, the local transfer robot LR11 can access the two liquid processing units M11, M12 arranged on one side of the main transfer chamber 5 in the first layer S1, and the two curing units D11, D12 arranged above these liquid processing units M11, M12, respectively. Then, one of the substrates W, which has been subjected to the treatment in the liquid treatment units M11 and M12, is fed into either one of the two curing units D11 and D12 by the local transfer robot LR11, and a curing treatment for curing the film forming treatment liquid film on the surface of the substrate W is performed on the substrate W.
On the other hand, the partial transfer robot LR11 takes out the substrate W, which has been subjected to the curing process in the curing unit D11 on the side close to the carrier holding portion 2, and transfers the substrate W in the vertical direction (more specifically, downward), and sends the substrate W to the liquid processing unit M11 below the curing unit D11. The partial transfer robot LR11 takes out the substrate W that has been subjected to the curing process in the curing unit D12 on the side away from the carrier holding portion 2, transfers the substrate W in the vertical direction (more specifically, downward), and sends the substrate W to the liquid processing unit M12 below the curing unit D12.
The partial transfer robot LR11 may transfer the substrate W, which has been processed in the curing unit D11 on the side close to the carrier holding portion 2, to the liquid processing unit M12 below the liquid processing unit M12 on the side away from the carrier holding portion 2. Similarly, the partial transfer robot LR11 may transfer the substrate W, which has been processed in the curing unit D12 on the side away from the carrier holding portion 2, to the liquid processing unit M11 below the curing unit D11 on the side close to the carrier holding portion 2. More generally, one substrate W, which has been subjected to the curing process in the curing units D11, D12, is fed into either one of the two liquid processing units M11, M12 by the local transfer robot LR11, and a removal process for removing the cured film on the surface thereof is performed from the substrate W.
The same applies to the operation of the local transfer robot LR12 disposed on the other side of the main transfer chamber 5 in the first stage S1. That is, the local transfer robot LR12 is configured to be able to access the two liquid processing units M13 and M14 and the two curing units D13 and D14, and performs the same operation as the local transfer robot LR11 on the opposite side of the main transfer chamber 5.
The same applies to the operations of the partial transfer robots LR21 and LR22 disposed on the second floor S2. That is, the local transfer robot LR21 is configured to be able to access the two liquid processing units M21 and M22 and the two curing units D21 and D22, and these units are operated in the same manner as the local transfer robot LR 11. The local transfer robot LR22 is configured to be able to access the two liquid processing units M23 and M24 and the two curing units D23 and D24, and operates in the same manner as the local transfer robot LR 11.
In the present embodiment, the two partial conveyance robots LR11, LR21 disposed on one side of the main conveyance chamber 5 are disposed in the two partial conveyance chambers C11, C21 overlapping each other in a plan view. Similarly, in the present embodiment, the two partial conveyance robots LR12 and LR22 disposed on the other side of the main conveyance chamber 5 are disposed in the two partial conveyance chambers C12 and C22 overlapping each other in a plan view.
The two partial conveyance chambers C11 and C21 and the C12 and C22 that overlap one another may be one partial conveyance chamber that communicates up and down. Further, one local conveyance robot LR may be disposed in the one local conveyance chamber C.
At this time, a laminated unit group G1 is arranged on the side of the carrier holding portion 2 with respect to the partial conveyance chamber C on the side of the main conveyance chamber 5, the laminated unit group G1 being formed by laminating the liquid processing unit M11, the curing unit D11, the liquid processing unit M21, and the curing unit D21 in this order, and a laminated unit group G2 is arranged on the side of the carrier holding portion 2 away from the main conveyance chamber, the laminated unit group G2 being formed by laminating the liquid processing unit M12, the curing unit D12, the liquid processing unit M22, and the curing unit D22 in this order. One local transfer robot LR disposed in the local transfer chamber C can access a total of 8 units constituting the pair of stacked unit groups G1 and G2.
In this case, the local transfer robot LR may operate as follows: one substrate W, which has been subjected to the film formation process in one of the liquid processing units M11, M12, M21, M22, is fed to the curing units D11, D12, D21, D22 stacked directly above it. The local transfer robot LR may feed one substrate W, which has been subjected to the film formation process in one of the liquid processing units M11, M12, M21, and M22, to any one of the 4 accessible curing units D11, D12, D21, and D22. In general, productivity can be improved by feeding the substrate W into the curing unit D which is not used for processing.
The local transfer robot LR may operate as follows: one substrate W, for which the curing process has been completed in one of the curing units D11, D12, D21, D22, is fed to the liquid processing units M11, M12, M21, M22 stacked immediately below. The partial transfer robot LR may feed one substrate W, which has undergone the curing process in one of the curing units D11, D12, D21, and D22, to any one of the 4 liquid processing units M11, M12, M21, and M22 that can be accessed. In general, productivity can be improved by feeding the substrate W into the liquid processing unit M that is not used for processing to perform the removal processing.
The other side of the main transport chamber 5 has the same structure, and one local transport robot LR shared by the two stacked cell groups G3 and G4 can be operated in the same manner.
As can be seen from a comparison between fig. 1A and 5A, the configuration of the present embodiment can reduce the occupied area (footprint) of the substrate processing apparatus 1A.
The substrate W, after the curing process in the curing unit D has been completed, may be transported by the main transport robot CR. At this time, the main transfer robot CR may operate as follows: the substrate W is fed to an arbitrary liquid processing unit M to perform a removal process.
Third embodiment
Fig. 6A is a schematic plan view for explaining the structure of a substrate processing apparatus 1B according to a third embodiment of the present invention, and fig. 6B is an elevation view thereof. In the substrate processing apparatus 1B of the present embodiment, the arrangement of the cells forms a three-layer structure including the first layer S1, the second layer S2, and the third layer S3.
In the present embodiment, 3 laminated cell groups G11, G12, G13 are arranged along the main transport chamber 5 on one side of the main transport chamber 5, and 3 laminated cell groups G14, G15, G16 are arranged along the main transport chamber 5 on the other side of the main transport chamber 5 in a plan view.
The laminated unit group G11 is configured by laminating 3 liquid treatment units M11, M21, and M31 in order from below. The laminated unit group G13 is configured by laminating 3 liquid treatment units M12, M22, and M32 in order from below. The laminated unit group G12 arranged between the laminated unit groups G11, G13 is configured by laminating 6 curing units D11, D12, D21, D22, D31, D32 in order from below. Further, the partial conveyance chambers C11, C21, and C31 are arranged between the laminated cell groups G11 and G13 in order from below, and the partial conveyance robots LR11, LR21, and LR31 are arranged in the partial conveyance chambers, respectively. In the present embodiment, the partial conveyance chambers C11, C21, and C31 are disposed on the opposite side of the laminated unit group G12 from the main conveyance chamber 5.
The laminated unit group G14 is configured by laminating 3 liquid treatment units M13, M23, and M33 in order from below. The laminated unit group G16 is configured by laminating 3 liquid treatment units M14, M24, and M34 in order from below. The laminated cell group G15 disposed between the laminated cell groups G14, G16 is configured by laminating 6 curing cells D13, D14, D23, D24, D33, D34 in order from below. Further, the partial conveyance chambers C12, C22, and C32 are arranged between the laminated cell groups G14 and G16 in order from below, and the partial conveyance robots LR12, LR22, and LR32 are arranged in the partial conveyance chambers, respectively. In the present embodiment, the partial conveyance chambers C12, C22, and C32 are disposed on the opposite side of the main conveyance chamber 5 from the stacked unit group G15.
Focusing on the structure of each layer, in the first layer S1, a pair of liquid processing units M11 and M12 are arranged on one side of the main transport chamber 5 in the longitudinal direction of the main transport chamber 5 in a plan view, and a pair of curing units D11 and D12 and a single local transport robot LR11 are arranged between the pair of liquid processing units M11 and M12. In the present embodiment, the pair of curing units D11 and D12 are stacked up and down. The curing units D11 and D12 are disposed near the main conveyance chamber 5, and the local conveyance robot LR11 is disposed on the opposite side of the curing units D11 and D12 from the main conveyance chamber 5.
The local conveyance robot LR11 is disposed in the local conveyance chamber C11. The local transfer robot LR11 can access the pair of liquid processing units M11, M12 and the pair of curing units D11, D12.
The local conveyance robot LR11 operates as follows: one substrate W, which has been subjected to the film formation process in the liquid processing units M11 and M12, is sent out, and the substrate W is sent into one of the pair of curing units D11 and D12. The local transfer robot LR11 operates as follows: one of the substrates W after the curing process in the curing units D11 and D12 is sent out, and the substrate W is sent into one of the pair of liquid processing units M11 and M12 to be subjected to the removal process.
The same applies to the cell arrangement on the other side of the main transport chamber 5 in the first layer S1. That is, on the other side of the main transport chamber 5, a pair of liquid processing units M13 and M14 are arranged along the longitudinal direction of the main transport chamber 5 in a plan view, and a pair of curing units D13 and D14 and a local transport robot LR12 are arranged between the pair of liquid processing units M13 and M14. The pair of curing units D13, D14 are stacked up and down. The curing units D13 and D14 are disposed near the main conveyance chamber 5, and the partial conveyance chamber C12 is partitioned on the opposite side of the curing units D13 and D14 from the main conveyance chamber 5, and the partial conveyance robot LR12 is accommodated therein.
The local transfer robot LR12 can access the pair of liquid processing units M13, M14 and the pair of curing units D13, D14. The local conveyance robot LR12 operates as follows: one of the substrates W, which has been subjected to the treatment in the liquid treatment units M13 and M14, is sent out, and the substrate W is sent into one of the pair of curing units D13 and D14. The local transfer robot LR12 operates as follows: one of the substrates W after the curing process in the curing units D13 and D14 is sent out, and the substrate W is sent into one of the pair of liquid processing units M13 and M14 to be subjected to the removal process.
The same applies to the arrangement of the units of the second layer S2 and the third layer S3 and the operation of the local transfer robot LR of each layer. The second floor S2 includes a pair of liquid processing units M21, M22, a pair of curing units D21, D22, and a single local conveyance robot LR21 disposed on one side of the main conveyance chamber 5, and further includes a pair of liquid processing units M23, M24, a pair of curing units D23, D24, and a single local conveyance robot LR22 disposed on the other side of the main conveyance chamber 5. The third layer S3 includes a pair of liquid processing units M31, M32, a pair of curing units D31, D32, and a single local transfer robot LR31 disposed on one side of the main transfer chamber 5, and further includes a pair of liquid processing units M33, M34, a pair of curing units D33, D34, and a single local transfer robot LR32 disposed on the other side of the main transfer chamber 5.
As described above, in the present embodiment, the liquid processing unit M and the curing unit D are arranged in a planar manner (horizontally arranged), and thus the total height of the substrate processing apparatus 1B can be suppressed, and a plurality of liquid processing units M and curing units D can be provided.
In the present embodiment, the 3 partial conveyance robots LR11, LR21, LR31 disposed on one side of the main conveyance chamber 5 are disposed in the 3 partial conveyance chambers C11, C21, C31, respectively, which overlap each other, in a plan view. The 3 partial conveyance chambers C11, C21, and C31 may be one partial conveyance chamber C communicating vertically. In addition, one local conveyance robot LR may be disposed in the one local conveyance chamber C. At this time, the laminated cell group G11 formed by laminating 3 liquid treatment cells M11, M21, M31 is arranged on the carrier holding portion 2 side with respect to the partial conveyance chamber C, the laminated cell group G13 formed by laminating 3 liquid treatment cells M12, M22, M32 is arranged on the side away from the carrier holding portion 2, and the laminated cell group G12 formed by laminating 6 curing cells D11, D12, D21, D22, D31, D32 is arranged on the main conveyance chamber 5 side. One local transfer robot LR disposed in the local transfer chamber C can access a total of 12 units constituting the 3 stacked unit groups G11 to G13.
In this case, the local transfer robot LR may operate as follows: one substrate W, on which film formation processing liquid film formation has been completed in a certain liquid processing unit M, is fed to a curing unit D located in the same layer. The local transfer robot LR may operate as follows: one substrate W, for which the curing process has been completed in a certain curing unit D, is fed to a liquid processing unit M located in the same layer to perform the removal process. The local transfer robot LR may feed one substrate W, on which film formation processing liquid film formation has been completed in one of the liquid processing units M, to any one of the 6 accessible curing units D. In general, the productivity can be improved by feeding the substrate W into the curing unit D which is not used for processing. The partial transfer robot LR may perform the removal process by feeding one substrate W, which has been subjected to the curing process in one curing unit D, to any one of the 6 accessible liquid processing units M. In general, the productivity can be improved by feeding the substrate W into the liquid processing unit M which is not used for processing. Of course, the same structure may be employed for the opposite side of the main transport chamber 5.
As can be seen from a comparison of fig. 1A and 6A, the configuration of the present embodiment can reduce the occupied area (footprint) of the substrate processing apparatus 1B. As is clear from a comparison between fig. 5B and 6B, the configuration of the present embodiment can dispose more cells in the same height space. In other words, the substrate processing apparatus having the same number of units can be configured at a lower height.
Fourth embodiment
Fig. 7 is a schematic elevation view for explaining the structure of a substrate processing apparatus 1C according to a fourth embodiment of the present invention, and shows the structure of one side of a main transfer chamber. A pair of laminated cell groups G21, G22 are arranged on one side of the main transport chamber 5 (see fig. 5A, etc.), and local transport robots LR1, LR2 are arranged between the laminated cell groups G21, G22. In this example, one laminated unit group G21 is configured by laminating 3 liquid treatment units M1, M2, M3 in three layers. The other laminated unit group G22 includes one liquid handling unit M4, and 4 curing units D1 to D4 laminated in order on the liquid handling unit M4. The same structure is provided on the opposite side of the main conveyance chamber 5. The main transfer robot CR can access the 4 liquid processing units M1 to M4 disposed on one side of the main transfer chamber 5, and can access the 4 liquid processing units also disposed on the opposite side of the main transfer chamber 5. The main transfer robot CR may be configured to be able to access the 4 curing units D1 to D4 disposed on one side of the main transfer chamber 5 and to be able to access the 4 curing units disposed on the opposite side of the main transfer chamber 5.
In this example, two partial conveyance robots LR1, LR2 are provided on one side of the main conveyance chamber 5, and these partial conveyance robots LR1, LR2 are disposed in one partial conveyance chamber C. For example, the lower local transfer robot LR1 can access the 3 liquid processing units M1, M2, and M4 and the two curing units D1 and D2. The upper partial transfer robot LR2 can access the two liquid handling units M2, M3, and 4 curing units D1 to D4. These partial conveyance robots LR1 and LR2 operate as follows: the substrate W, which has been formed into a film formation processing liquid by the liquid processing units M1 to M4, is fed to any one of the curing units D1 to D4. The local conveyance robots LR1 and LR2 operate as follows: the substrates W cured by the curing units D1 to D4 are sent to any one of the liquid treatment units M1 to M4 to be subjected to the removal treatment. The same structure is provided on the opposite side of the main transport chamber 5, and the operations of the two partial transport robots are also the same. The substrate W after the curing process may be transported by the main transport robot CR. That is, the main transfer robot CR may operate as follows: the substrate W cured in one of the curing units D is fed to one of the liquid processing units M.
Fifth embodiment
Fig. 8 is a schematic plan view for explaining the structure of a substrate processing apparatus 1D according to a fifth embodiment of the present invention. In the present embodiment, 3 laminated cell groups G31, G32, G33 are provided. The first laminated unit group G31 is configured by laminating the liquid treatment units M11, M21, and M31 in a plurality of layers (three layers in the present embodiment). The second laminated cell group G32 is opposed to the first laminated cell group G31 in the arrangement direction of the carriers 3 in the carrier holding section 2. The second laminated unit group G32 is configured by laminating the liquid treatment units M12, M22, and M32 in a plurality of layers. The third laminated cell group G33 is arranged between the first laminated cell group G31 and the second laminated cell group G32. The third laminated cell group G33 is configured by laminating the curing cells D1 to D6 in a plurality of layers (6 layers in the present embodiment), and has a similar structure to the laminated cell groups G12 and G15 shown in fig. 6A and 6B. The local conveyance chamber C is disposed on the opposite side of the curing units D1 to D6 from the main conveyance robot CR. In the local conveyance chamber C, a local conveyance robot LR is disposed. The local transfer robot LR may be provided in one layer corresponding to each of the liquid processing units M11, M12, M22, M31, and M32. Further, one common local transfer robot LR may be provided for the liquid processing units M arranged in a plurality of layers (for example, all layers).
The main transfer robot CR is disposed in the main transfer chamber 5A. The main transport chamber 5A is partitioned between the first to third stacked cell groups G31 to G33 and the indexer robot IR. The transfer of the substrate W between the indexer robot IR and the main transfer robot CR may be performed by the substrate transfer unit 7 that temporarily holds the substrate W. The main transfer robot CR feeds the unprocessed substrates W received from the indexer robot IR via the substrate transfer unit 7 to one of the liquid processing units M included in the first lamination unit group G31 or the second lamination unit group G32. The substrate W processed by the liquid processing unit M is sent out by the local transfer robot LR and is sent into any one of the curing units D1 to D6 accessible by the local transfer robot LR. The substrate W processed by the curing unit D is taken out by the local transfer robot LR and sent to the liquid processing unit M accessible by the local transfer robot LR to be removed. The substrate W after the removal process and the like in the liquid processing unit M is taken out by the main transfer robot CR, and transferred to the indexer robot IR via the substrate transfer unit 7.
The substrate W cured by the curing unit D may be transferred to the liquid processing unit M by the main transfer robot CR to be removed.
Sixth embodiment
Fig. 9 is a diagram for explaining the structure of a substrate processing apparatus according to a sixth embodiment of the present invention, and shows a configuration example of the curing unit D. The curing unit D has a curing chamber 111 constituting a vacuum chamber. An exhaust pipe 112 is connected to the curing chamber 111. The exhaust pipe 112 is connected to an exhaust unit 113 such as a vacuum pump. An exhaust valve 110 is inserted into the exhaust pipe 112.
In the curing chamber 111, a substrate carry-in/carry-out opening 114 for carrying in/out the substrate W by the partial transfer robot LR is formed in the side wall 115.
In the curing chamber 111, a substrate feed opening 116 for feeding the cured substrate W by the main transfer robot CR may be formed in the side wall 117. In this case, the structure is preferably as follows: a shutter 118 for opening and closing the substrate feed-out opening 116 is provided, and the shutter 118 is driven by a shutter driving unit 119. Further, an O-ring 120 as a sealing member is preferably provided on a surface of the baffle 118 facing the curing chamber 111. At this time, the shutter 118 is pressed against the side wall 117 of the curing chamber 111, thereby hermetically sealing the substrate feed-out opening 116 via the O-ring 120. When the main transfer robot CR transfers the substrate W processed by the curing unit D, the barrier driving unit 119 drives the barrier 118 to open the substrate transfer opening 116. The hand HC of the main transfer robot CR enters the opened substrate feed-out opening 116.
On the other hand, the substrate carry-in/out opening 114 is opened and closed by a cover member 125 provided on the hand LH of the partial transfer robot LR. An O-ring 126 as a sealing member is provided on a surface of the cover member 125 opposite to the curing chamber 111. The local conveyance robot LR operates as follows: the substrate W on which the film formation process liquid film 10 is formed by the liquid processing unit M is sent into the curing chamber 111, and then the cover member 125 is pressed against the side wall 115 of the curing chamber 111 via the O-ring 126. Thereby, the substrate carry-in/out opening 114 is hermetically blocked.
An inert gas nozzle 71A for introducing inert gas into the space in the curing chamber 111 is provided on the ceiling surface of the curing chamber 111. The inert gas nozzle 71A has the same structure as that of the curing unit shown in fig. 3, and inert gas is supplied to the inert gas nozzle 71A. In fig. 9, the same reference numerals are given to the portions corresponding to the portions in fig. 3, and the description thereof is omitted.
The outline of the operation of the curing unit D is as follows.
The partial transfer robot LR feeds the substrate W into the curing chamber 111 in a state where the substrate feed-out opening 116 is blocked by the shutter 118. The substrate W is a substrate having a film forming process liquid film 10 formed on the upper surface thereof. The partial transfer robot LR brings the hand LH into the curing chamber 111, and presses the cover member 125 against the outer surface of the sidewall 115 of the curing chamber 111 to block the substrate in/out opening 114. In this way, the curing chamber 111 becomes an airtight sealed space. In this state, the exhaust valve 110 is opened, and the exhaust unit 113 is operated, whereby the space in the curing chamber 111 is depressurized to a pressure lower than the atmospheric pressure. Thereby, the film forming process liquid film 10 on the substrate W is dried and cured.
The inert gas valve 73 is opened until the pressure reduction of the space in the curing chamber 111 is started, and inert gas is supplied from the inert gas nozzle 71 into the curing chamber 111. Thereby, the inside of the curing chamber 111 is kept at a low humidity space. After the decompression in the curing chamber 111 is started, the inert gas valve 73 is closed so as not to obstruct the decompression.
As described above, after the curing of the film formation process liquid film 10 on the substrate W is completed, the operation of the exhaust unit 113 is stopped, and the inert gas valve 73 is opened as necessary. Thereby, the space in the curing chamber 111 is restored to the atmospheric pressure. Next, the partial transfer robot LR withdraws the hand LH holding the substrate W on which the cured film 10S is formed from the curing chamber 111. Next, the local transfer robot LR transfers the substrate W to the liquid processing unit M to perform a removal process.
When the cured substrate W is transported by the main transport robot CR, the barrier driving unit 119 retracts the barrier 118 from the substrate feed-out opening 116, thereby opening the substrate feed-out opening 116. Then, the main transfer robot CR brings the hand HC into the curing chamber 111, receives the cured substrate W from the hand LH of the partial transfer robot LR, and sends the substrate W out through the substrate sending-out opening 116.
As described above, by providing the cover member 125 on the hand LH of the partial transfer robot LR, the barrier driving mechanism for opening and closing the substrate carry-in/out opening 114 can be omitted. Further, since the substrate W can be held in the curing chamber 111 by the hand LH of the partial transfer robot LR, it is not necessary to provide a substrate holding mechanism in the curing chamber 111. Since the film formation process liquid film 10 is cured by the depressurization in a short time, the hand LH of the local transfer robot LR is not likely to hold the substrate W during the curing process, and thus the productivity is not likely to be greatly affected.
In addition, by the operation of transporting the substrate W to the curing chamber 111 by the hand LH, the substrate in/out opening 114 can be sealed by the cover member 125, and the curing process can be performed while holding the substrate W directly in the curing chamber 111. Therefore, the dedicated operation for opening and closing the substrate in/out opening 114 and the transfer operation of the substrate W can be omitted, and thus the time required for the entire process can be shortened, and the productivity can be improved. Specifically, it is possible to save time for opening and closing the shutter of the substrate in/out opening, time for withdrawing the hand LH from the curing chamber 111 when the substrate is fed in, time for entering the curing chamber 111 when the substrate is fed out, time for an operation of placing the substrate on the lift pins, time for an operation of receiving the substrate from the lift pins, time for lifting and lowering the lift pins, and the like. In addition, when the substrate W after the curing process is transported by the partial transport robot LR, the time required for opening and closing the substrate in/out opening 114, the time required for transferring the substrate W to and from the main transport robot CR, and the like can be also saved.
The substrate W may be heated at the same time as the curing treatment is performed under reduced pressure. Specifically, the hand LH of the local transfer robot LR may be heated by a hand heating unit 97A (see fig. 4) to heat the substrate W. In addition, a heating unit 127 for heating the substrate W by irradiation with radiant heat or electromagnetic waves may be provided in the curing chamber 111, and the substrate W held by the hand LH may be heated by the heating unit 127.
Seventh embodiment
Fig. 10 is a diagram for explaining a seventh embodiment of the present invention, and shows a structure of a hand cleaning unit (arm cleaning unit) for cleaning the hand LH of the local transfer robot LR.
In the above-described embodiment, the hand LH is cleaned in the partial conveyance chamber C. In contrast, in the present embodiment, for example, as shown by a virtual line in fig. 8, a hand cleaning unit 170 is provided adjacent to the partial conveyance chamber C.
The hand cleaning unit 170 includes a hand cleaning chamber 171 provided adjacent to the partial conveyance chamber C, a hand cleaning nozzle 172 disposed in the hand cleaning chamber, and an exhaust unit 173 for depressurizing the hand cleaning chamber 171 to a pressure lower than the atmospheric pressure.
The hand cleaning chamber 171 constitutes a vacuum chamber. An exhaust/drain pipe 176 is connected to the bottom 175 of the hand washing chamber 171. The exhaust/drain pipe 176 is connected to an exhaust unit 173 such as a vacuum pump via an exhaust pipe 176A. An exhaust valve 177 is inserted into the exhaust pipe 176A. The exhaust/drain pipe 176 is further connected to a drain pipe 176B via a drain valve 178.
An opening 180 for inserting the hand LH of the local transfer robot LR is formed in the side wall 174 in the hand cleaning chamber 171. The opening 180 is opened and closed by the cover member 125 provided on the hand LH of the partial transfer robot LR. An O-ring 126 as a sealing member is provided on a surface of the cover member 125 facing the hand washing chamber 171. When the substrate W is not being transferred, the partial transfer robot LR inserts the hand LH from the opening 180 into the hand cleaning chamber 171, and then presses the cover member 125 against the side wall 174 of the hand cleaning chamber 171 via the O-ring 126. Thereby, the opening 180 is hermetically blocked.
The hand cleaning nozzle 172 is disposed on the top plate surface of the hand cleaning chamber 171, for example. The hand cleaning nozzle 172 ejects cleaning liquid to the hand LH inserted into the hand cleaning chamber 171. The hand washing nozzle 172 may be a shower nozzle (shower nozzle) for spraying a washing liquid in a shower shape. A cleaning liquid pipe 185 is connected to the hand cleaning nozzle 172. The cleaning liquid pipe 185 is connected to a cleaning liquid supply source 186. The cleaning liquid supply source 186 supplies a cleaning liquid, such as an organic solvent, that can dissolve the film formation processing liquid. A cleaning liquid valve 187 for opening and closing the cleaning liquid flow path is inserted into the cleaning liquid pipe 185.
The outline of the operation of the hand washing unit 170 is as follows.
The partial transfer robot LR brings the hand LH into the hand cleaning chamber 171, and presses the cover member 125 against the outer surface of the side wall 181 of the hand cleaning chamber 171 to block the opening 180. In this way, the inside of the hand cleaning chamber 171 is an airtight sealed space. In this state, the drain valve 178 is opened. Then, the cleaning liquid valve 187 is opened, whereby the cleaning liquid is supplied from the hand cleaning nozzle 172 to the hand LH. Thereby, the hand LH is cleaned. The cleaning liquid falls down toward the bottom 175, passes through the exhaust/drain pipe 176, and is further discharged to the drain pipe 176B through the drain valve 178.
When the cleaning liquid is discharged from the hand cleaning nozzle 172 for only a predetermined time, the cleaning liquid valve 187 is closed, and the discharge of the cleaning liquid is stopped. Then, the drain valve 178 is closed, and instead, the exhaust valve 177 is opened, so that the exhaust unit 173 is operated. Thereby, the space in the hand cleaning chamber 171 is depressurized to a pressure lower than the atmospheric pressure. Thereby, the liquid component on the hand LH evaporates, and the hand LH is dried.
As described above, after the cleaning and drying of the hand LH is completed, the operation of the exhaust unit 173 is stopped, and the drain valve 178 is opened as necessary. Thereby, the space in the hand cleaning chamber 171 is restored to the atmospheric pressure. Next, the local transfer robot LR withdraws the hand LH from the hand cleaning chamber 171.
The substrate W may be heated while the pressure in the hand cleaning chamber 171 is reduced. Specifically, the hand LH of the local transfer robot LR may be heated by a hand heating unit 97A (see fig. 4) to heat the substrate W. Thus, drying of the hand LH can be promoted. Further, a heating unit 188 that heats the hand LH by radiant heat or electromagnetic wave irradiation may be provided in the hand cleaning chamber 171, so that drying of the hand LH may be promoted.
As described above, in this embodiment, since the hand cleaning chamber 171 (arm cleaning chamber) is provided adjacent to the partial transfer chamber C, the hand LH can be cleaned in the hand cleaning chamber 171 when the partial transfer robot LR is not transferring the substrate W. Further, since the hand cleaning nozzle 172 (arm cleaning nozzle) is disposed in the hand cleaning chamber 171, the hand LH can be cleaned while the cleaning liquid is prevented from entering the partial conveyance chamber C. This can suppress the influence of the cleaning liquid on the substrate W. In addition, by depressurizing the hand cleaning chamber 171, the hand LH cleaned with the cleaning liquid can be quickly dried.
Eighth embodiment
Fig. 11 is a diagram for explaining the structure of a substrate processing apparatus according to an eighth embodiment of the present invention, and is a cross-sectional view schematically showing a configuration example of a curing unit that can be used in place of the curing unit described above.
In this embodiment, the solidifying unit D has a structure similar to that shown in fig. 3, and further includes a cooling plate 80 as a substrate cooling unit. Instead of the structure shown in fig. 3, a structure similar to that shown in fig. 9 may be used. In fig. 10, an example having a structure similar to that shown in fig. 3 is shown.
The cooling plate 80 is disposed on the base portion 81, and holds the substrate W on the upper surface thereof and cools the substrate W from the lower surface. A plurality (3 or more) of lift pins 84 are disposed through the cooling plate 80. The lift pins 84 are moved up and down by the lift pin lifting unit 85, thereby moving the substrate W up and down on the cooling plate 80.
The substrate processing apparatus further includes a second partial transfer robot 150 that transfers the substrate W, for which the curing process in the curing chamber 51 has been completed, to the cooling plate 80. The second partial transfer robot 150 includes a hand 151 that holds the substrate W, and a hand driving unit 152 that moves the hand 151. The hand driving unit 152 reciprocates the hand 151 between an upper side (first substrate holding position) of the substrate holder 52 and an upper side (second substrate holding position) of the cooling plate 80. When the hand 151 transfers the substrate W to and from the lift pins 54 and 84, the lift pins 54 and 84 are lifted and lowered. Of course, the hand driving unit 152 may be configured to lift and lower the substrate W to transfer the substrate W to and from the lift pins 54 and 84.
In the curing chamber 51, the substrate W is heated by the substrate holder 52, and the curing process space 50 in the curing chamber 51 is depressurized, so that the film forming process liquid film 10 on the surface of the substrate W is solidified to form a cured film 10S.
After the curing process, the curing process space 50 is returned to the atmospheric pressure, and the movable cover 512 is opened. In this way, an opening for feeding out the substrate W is formed between the base portion 511 and the movable cover portion 512. Then, the cured substrate W is lifted up above the substrate holder 52 by the lift pins 54. Then, the second partial transfer robot 150 enters the hand 151 through the opening formed between the base portion 511 and the movable cover portion 512. Then, the cured substrate W is transferred to the hand 151 by lowering the lift pins 54. Then, the second partial transfer robot 150 drives the hand 151 to move the substrate W above the cooling plate 80. In this state, the lift pin lifting unit 85 lifts the lift pins 84 to receive the substrate W from the hand 151. After the hand 151 is retracted from above the cooling plate 80, the lift pins 84 are lowered, and the substrate W is placed on the cooling plate 80.
The cooling plate 80 cools the substrate W to room temperature. Then, the lift pins 84 lift the substrate W, and the hand LH of the partial transfer robot LR receives the substrate W and sends it out of the curing unit D. When the cured substrate W is transported by the main transport robot CR, the hand HC of the main transport robot CR receives the substrate W from the lift pins 84 and sends it out of the curing unit D.
As described above, since the substrate W after the curing process is cooled by the cooling plate 80, the processing time in the curing unit D can be shortened, and thus the productivity can be improved. Since the substrate W heated in the curing chamber 51 is transported by the second partial transport robot 150 different from the main transport robot CR, excessive heat can be prevented from accumulating in the main transport robot CR, and the influence of heat on the substrate W transported by the main transport robot CR can be suppressed.
The embodiments of the present invention have been described above, but the present invention may be further implemented in other modes.
For example, in the above-described embodiment, the curing unit D is configured to perform the reduced-pressure drying by depressurizing the inside of the curing chambers 51, 111, but the curing unit D does not need to have a structure for depressurizing. For example, the curing unit D may be configured to cure the film formation processing liquid film 10 by heating the substrate W at atmospheric pressure. The film forming process liquid film 10 may be dried and solidified by supplying the heated inert gas from the inert gas supply source 74 and using warm air generated by the inert gas.
In the configurations of fig. 1A, 1B, 5A, 5B, 6A, 6B, and 7, a substrate transfer unit that temporarily holds the substrate W may be disposed between the indexer robot IR and the main transfer robot CR, and the transfer of the substrate between these robots may be performed in the same manner as in the case of the configuration of fig. 8.
The present application corresponds to japanese patent application publication No. 2017-061381, filed on the patent office at 3/27 of 2017, the entire disclosure of which is incorporated herein by reference.
While the embodiments of the present invention have been described in detail, these embodiments are only specific examples for illustrating the technical content of the present invention, and the present invention should not be construed as being limited to these specific examples, but the scope of the present invention is limited only by the appended claims.
Description of the reference numerals
W: substrate board
IR: indexer robot
S1: first layer
S2: second layer
S3: third layer
M, M1-M4, M11-M14, M21-M24, M31-M34: liquid treatment unit
D. D1-D6, D11-D14, D21-D24, D31-D34: curing unit
LR, LR1, LR2, LR11-LR14, LR21-LR24, LR31, LR32: local conveying robot
LH, LH1, LH2: hand of local transport robot
C. C11-C14, C21-C24: local transport chamber
G1-G4, G11-G16, G21, G22, G31-G33: laminated unit group
CR: main conveying robot
HC: hand of main transport robot
1. 1A, 1B, 1C, 1D: substrate processing apparatus
2: carrier holding part
3: carrier body
5. 5A: main transport room
7: substrate transfer unit
10: film forming treatment liquid film
10S: cured film
11: treatment chamber
12: rotary chuck
13: cup body
14: liquid medicine nozzle
15: film forming treatment liquid nozzle
16: liquid removing nozzle
17: motor with a motor housing
18: axis of rotation
19: blocking plate
19a: opposed surface
19b: an opening
20: interrupter plate driving unit
20A: lifting unit for shutoff plate
20B: interrupter plate rotating unit
21: liquid medicine piping
22: liquid medicine valve
23: liquid medicine supply source
25: rotary shaft of shutoff plate
26: film forming processing liquid piping
27: film forming treatment liquid valve
28: film forming processing liquid supply source
29: cleaning nozzle
31A: cleaning liquid piping
31B: organic solvent piping
32A: cleaning liquid valve
32B: organic solvent valve
33A: cleaning liquid supply source
33B: organic solvent supply source
37: substrate in/out opening
38: substrate in/out opening
39. 40: baffle plate
41. 42: baffle drive unit
45: inactive gas flow path
46: inactive gas piping
47: inactive gas valve
48: inactive gas supply source
50: curing treatment space
51: curing chamber
511: base portion
512: movable cover part
52: substrate holder
53H: heater
53C: cooling unit
54: jacking pin
55: lifting pin lifting unit
56: cover drive unit
62: exhaust pipe
63: exhaust unit
64: exhaust valve
71. 71A: inert gas nozzle
72: inactive gas piping
73: inactive gas valve
74: inactive gas supply source
80: cooling plate
81: base portion
84: jacking pin
85: lifting pin lifting unit
89: axis of rotation
90: hand driving unit
91. 91A: cleaning liquid nozzle
92: cleaning liquid piping
93: cleaning liquid valve
94: cleaning liquid supply source
97A: hand heating unit
97B: hand cooling unit
98A: heat medium passage
98B: refrigerant passage
99A: heating plate
99B: cooling plate
101: liquid removing pipe
102: liquid removing valve
103: removing liquid supply source
110: exhaust valve
111: curing chamber
112: exhaust pipe
113: exhaust unit
114: substrate in/out opening
116: substrate feed-out opening
118: baffle plate
125: cover member
126: o-ring
127: heating unit
131: back nozzle
132: jet outlet
133: cleaning liquid supply pipe
134: cleaning liquid valve
135: cleaning liquid supply source
136: organic solvent valve
137: organic solvent supply source
140: inactive gas flow path
141: inactive gas supply pipe
142: inactive gas valve
143: inactive gas supply source
150: second local transfer robot
151: hand portion
152: hand driving unit
160: bottom part
161: liquid discharge pipe
165: inert gas nozzle
166: inactive gas piping
167: inactive gas valve
168: inactive gas supply source
170: hand cleaning unit
171: hand cleaning chamber
172: hand cleaning nozzle
173: exhaust unit
175: bottom part
176: exhaust/drain pipe
177: exhaust valve
178: liquid discharge valve
180: an opening
181: side wall
185: cleaning liquid piping
186: cleaning liquid supply source
187: cleaning liquid valve
188: heating unit

Claims (18)

1. A substrate processing apparatus, comprising:
a liquid processing unit that supplies a film forming processing liquid to a surface of a substrate in a processing chamber, thereby forming a film forming processing liquid film on the surface of the substrate;
a curing unit that cures the film forming process liquid film in a curing chamber to form a cured film on the surface of the substrate;
a removal processing unit that supplies a removal liquid for removing the cured film to the surface of the substrate in a removal chamber;
A main transport unit for feeding a substrate into the processing chamber and feeding the substrate out of the removal chamber; and
a local transport unit that transports a substrate from the processing chamber, and transports the substrate in a state where the film forming process liquid film is formed on a surface thereof, and feeds the substrate into the curing chamber;
the main transport unit is disposed in a main transport chamber, and the local transport unit is disposed in a local transport chamber isolated from the main transport chamber.
2. The substrate processing apparatus according to claim 1, wherein,
the curing unit includes a heating unit for heating the substrate.
3. The substrate processing apparatus according to claim 1 or 2, wherein,
the partial transfer unit further transfers the substrate from the curing chamber and transfers the substrate to the removing chamber.
4. The substrate processing apparatus according to claim 3, wherein,
the local delivery unit includes: a first transfer arm for transferring the substrate from the processing chamber to the curing chamber; and a second transfer arm that transfers the substrate from the curing chamber to the removing chamber.
5. The substrate processing apparatus according to claim 1 or 2, wherein,
The liquid treatment unit includes:
a substrate holding unit that horizontally holds a substrate; and
and a processing liquid ejection unit configured to eject the film forming processing liquid onto the substrate held by the substrate holding unit.
6. The substrate processing apparatus according to claim 1 or 2, wherein,
the process chamber and the removal chamber are a common chamber.
7. The substrate processing apparatus according to claim 1 or 2, wherein,
the partial transport unit has a transport arm that holds a substrate and passes through the partial transport chamber,
the substrate processing apparatus further includes an arm cleaning nozzle,
the arm cleaning nozzle is provided in the partial conveyance chamber and ejects a cleaning liquid for cleaning the conveyance arm.
8. The substrate processing apparatus according to claim 7, wherein,
the local transport chamber includes:
a bottom portion that receives the cleaning liquid; and
and a liquid discharging unit discharging the cleaning liquid received by the bottom.
9. The substrate processing apparatus according to claim 1 or 2, wherein,
the partial shipment unit has a shipment arm holding a substrate,
the substrate processing apparatus further includes an arm cleaning nozzle,
the arm cleaning nozzle is provided on the transport arm and ejects a cleaning liquid for cleaning the transport arm.
10. The substrate processing apparatus according to claim 1 or 2, wherein,
the partial transport unit has a transport arm that holds a substrate and passes through the partial transport chamber,
the substrate processing apparatus further includes:
an arm cleaning chamber provided adjacent to the partial conveyance chamber;
an arm cleaning nozzle disposed in the arm cleaning chamber, for ejecting a cleaning liquid for cleaning the transport arm; and
and a decompression unit for decompressing the arm cleaning chamber to a pressure lower than the atmospheric pressure to dry the transport arm.
11. The substrate processing apparatus according to claim 1 or 2, wherein,
the removal processing unit includes:
a substrate holding unit that horizontally holds a substrate in the removal chamber; and
and a removing liquid ejecting unit that ejects removing liquid to the substrate held by the substrate holding unit.
12. A substrate processing method, comprising:
a process liquid film forming step of supplying a film forming process liquid to the surface of the substrate in the process chamber, thereby forming a film forming process liquid film on the surface of the substrate;
a first partial transfer step of transferring the substrate in a state where the film forming process liquid film is formed on a surface thereof from the process chamber to a curing chamber after the process liquid film forming step;
A cured film forming step of forming a cured film on the surface of the substrate by curing the film forming process liquid film in the curing chamber;
a second partial conveyance step of conveying the substrate to a removal chamber after the cured film formation step;
a removal processing step of supplying a removal liquid for removing the cured film to the surface of the substrate in the removal chamber; and
a main transport step of feeding the substrate into the processing chamber before the process liquid film forming step, and feeding the substrate out of the removal chamber after the removal processing step, by using a main transport unit;
the substrate is transported through a main transport chamber in the main transport step, and the substrate is transported through a partial transport chamber isolated from the main transport chamber in the first partial transport step.
13. The method for processing a substrate according to claim 12, wherein,
the cured film forming process includes a heating process,
in the heating step, the substrate is heated by a heating means.
14. The method for processing a substrate according to claim 12 or 13, wherein,
the first partial shipment step and the second partial shipment step are performed by a common partial shipment unit.
15. The method for processing a substrate according to claim 14, wherein,
the first partial shipment process is performed by a first shipment arm of the partial shipment unit, and the second partial shipment process is performed by a second shipment arm of the partial shipment unit.
16. The method for processing a substrate according to claim 14, wherein,
the method also comprises an arm cleaning procedure,
in the arm cleaning step, a cleaning liquid is supplied to the transport arm of the local transport unit.
17. The method of claim 12 or 13, wherein the processing chamber and the removal chamber are a common chamber.
18. The substrate processing method according to claim 12 or 13, wherein a cleaning process of cleaning the substrate is performed before the process liquid film forming process.
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PCT/JP2018/007861 WO2018180181A1 (en) 2017-03-27 2018-03-01 Substrate processing device and substrate processing method

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