CN110277352A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN110277352A
CN110277352A CN201910056430.8A CN201910056430A CN110277352A CN 110277352 A CN110277352 A CN 110277352A CN 201910056430 A CN201910056430 A CN 201910056430A CN 110277352 A CN110277352 A CN 110277352A
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CN
China
Prior art keywords
semiconductor device
terminal
shell
inside end
end sub
Prior art date
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CN201910056430.8A
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English (en)
Inventor
高桥圣一
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Publication of CN110277352A publication Critical patent/CN110277352A/zh
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Abstract

本发明防止外壳中的裂缝的产生、伸展，来抑制可靠性的下降。在半导体装置(10)中，连接端子(15)的内部端子部(15a)的背面与外壳(14)的端子配置部(14c)固定连接。因此，即使半导体装置(10)暴露于热变化，连接端子(15)的内部端子部(15a)也会追随外壳(14)的端子配置部(14c)的变形而变形。因此，对于外壳(14)的整个端子配置部(14c)均匀地产生应力，对于端子配置部(14c)的薄弱部的应力集中被降低。其结果是，能够也降低在裂缝起点产生的应力，从而抑制裂缝的产生、伸展。因此，能够抑制半导体装置(10)的可靠性的下降。

Description

半导体装置
技术领域
本发明涉及半导体装置。
背景技术
半导体装置包含多个电力用半导体元件，例如作为逆变器装置的电力转换元件而被使用。作为电力用半导体元件，有MOSFET(Metal Oxide Semiconductor Field EffectTransistor：金属氧化物半导体场效应晶体管)、IGBT(Insulated Gate BipolarTransistor：绝缘栅双极型晶体管)、FWD(Free Wheeling Diode：续流二极管)等。另外，作为电力用半导体元件，有将IGBT与FWD一体化而成的RC(Reverse Conducting：反向导通)-IGBT、以及对于反向偏压也具有充分的耐压的RB(Reverse Blocking：反向阻断)-IGBT等。
这样的电力用的半导体装置的半导体元件经由焊料与陶瓷电路基板接合，半导体元件与作为连接端子的引线框的一端部电连接。此外，在半导体装置中，半导体元件和陶瓷电路基板收纳于外壳内。在外壳中，引线框被嵌件成型为引线框的一端部位于外壳的内侧，引线框的另一端部向外部延伸出(例如参照专利文献1、2)。
现有技术文献
专利文献
专利文献1：日本特开2011-014739号公报
专利文献2：日本特开2004-134624号公报
发明内容
技术问题
但是，像这样嵌件成型于外壳的连接端子伴随着成型时的固化收缩或工作时的热循环等热变化而与由树脂构成的外壳之间在膨胀收缩上产生差异。于是，因膨胀收缩的差异而导致的应力集中于外壳内的薄弱部，有可能导致裂缝的产生、伸展。此外，外壳内的薄弱部是指外壳内的应力增大、容易引起应力集中的微小的裂缝、划痕或角部等部分。如果在外壳内产生裂缝或者裂缝伸展，则会导致半导体装置的可靠性下降。
本发明是鉴于这样的方面而做出的，其目的在于提供防止外壳中的裂缝的产生、伸展来抑制可靠性的下降的半导体装置。
技术方案
根据本发明的一个观点，提供一种半导体装置，其具有：半导体元件；连接端子，其与所述半导体元件电连接；以及外壳，其具备框部和端子配置部，所述框部围住收纳所述半导体元件的开口区域并埋设有所述连接端子的一部分，所述端子配置部从所述框部向所述开口区域侧突出，所述连接端子具有内部端子部，该内部端子部从所述框部向所述开口区域伸出，并且其与所述半导体元件电连接的正面在所述开口区域露出，背面与所述端子配置部固定连接。
另外，所述内部端子部在所述背面形成有粗面化区域，在所述粗面化区域形成有多个细微凹凸，所述多个细微凹凸的算术平均粗度是0.1μm以上且1000μm以下，所述内部端子部在所述背面的所述粗面化区域形成有多个细微孔。
另外，所述多个细微孔的平均直径是20nm以上且1000nm以下，所述内部端子部具备一对侧面，所述一对侧面与所述正面和所述背面垂直，并埋设于所述端子配置部，在所述一对侧面形成有所述粗面化区域。
另外，所述连接端子由铜、铝、镍、铁或至少包含它们中的一种的合金构成，所述外壳由聚苯硫醚、聚对苯二甲酸丁二醇酯树脂、聚邻苯二甲酰胺树脂或尼龙树脂构成。
另外，所述内部端子部的位于所述开口区域侧的第一前端部从所述端子配置部向所述开口区域侧露出，所述第一前端部比所述端子配置部的位于所述开口区域侧的第二前端部更向所述开口区域侧突出。
另外，所述第一前端部的两侧部与所述第二前端部对齐，所述第一前端部的中央部比所述第二前端部更向所述开口区域突出，在所述内部端子部构成有台阶。
发明效果
上述结构的半导体装置能够防止外壳中的裂缝的产生、伸展。由此，能够抑制半导体装置的可靠性的下降。
附图说明
图1是表示第一实施方式的半导体装置的一例的主要部分剖视图。
图2是表示第一实施方式的半导体装置的一例的主要部分俯视图。
图3是表示第一实施方式的半导体装置的外壳的内壁部的剖视图。
图4是第一实施方式的半导体装置的连接端子的主要部分放大图。
图5是表示第一实施方式的半导体装置的嵌件成型有连接端子的外壳的模型的图。
图6是表示第一实施方式的半导体装置的嵌件成型有连接端子的外壳的应力分布的图。
图7是表示参考例1的嵌件成型有连接端子的外壳的模型的图。
图8是表示参考例1的嵌件成型有连接端子的外壳的模型的应力分布的图。
图9是表示参考例2的嵌件成型有连接端子的外壳的模型的图。
图10是表示参考例2的嵌件成型有连接端子的外壳的模型的应力分布的图。
图11是表示参考例3的嵌件成型有连接端子的外壳的模型的图。
图12是表示参考例3的嵌件成型有连接端子的外壳的模型的应力分布的图。
图13是表示嵌件成型有连接端子的外壳内的裂缝起点前端部的应力的图表。
图14是表示第二实施方式的半导体装置的一例的主要部分剖视图。
图15是第二实施方式的半导体装置的连接端子的主要部分放大图。
图16是用于说明参考例4的嵌件成型有连接端子的外壳的图。
符号说明
10、10b半导体装置
11半导体元件
12陶瓷电路基板
12a绝缘板
12b导电图案
12c金属板
13散热板
14外壳
14a框部
14a1开口区域
14b内壁部
14c端子配置部
14c1端子区域
14c2、15a1、25a1背面
14c3、15a2、25a2正面
14c4裂缝起点
14c5第二前端部
14e上表面
15、25连接端子
15a、25a内部端子部
15a3、15a4、25a3、25a4侧面
15a5、25a5第一前端部
15b连接部
15c外部端子部
15d粗面化区域
16接合线
17a、17b焊料
18密封树脂
具体实施方式
以下，参照附图来详细地说明本发明的实施方式。
[第一实施方式]
利用图1～图4来说明第一实施方式的半导体装置。图1是表示第一实施方式的半导体装置的一例的主要部分剖视图，图2是表示第一实施方式的半导体装置的一例的主要部分俯视图。另外，图3是表示第一实施方式的半导体装置的外壳的内壁部的剖视图，图4是第一实施方式的半导体装置的连接端子的主要部分放大图。
应予说明，图1表示图2的单点划线Y-Y处的主要部分剖视图，图3表示图1和图2的单点划线X-X处的主要部分剖视图。另外，图4的(A)表示图3的后述的内部端子部15a附近的放大立体图，图4的(B)表示形成于内部端子部15a的背面15a1的粗面化区域15d的放大示意图。
如图1所示，半导体装置10具有半导体元件11、在正面接合有半导体元件11的陶瓷电路基板12、接合于陶瓷电路基板12的背面的散热板13、以及连接端子15。另外，半导体装置10构成为将这些结构收纳于外壳14内并用密封树脂18进行密封。但是，在图2～图4中省略了密封树脂18的记载，在图3和图4中省略了接合线16的记载。
半导体元件11包含由硅或碳化硅构成的例如IGBT、功率MOSFET等开关元件。这样的半导体元件11例如在背面具备漏极电极(或集电电极)，并在正面具备栅极电极和源极电极(或发射电极)。
另外，半导体元件11根据需要而包含SBD(Schottky Barrier Diode：肖特基势垒二极管)、FWD等二极管。这样的半导体元件11在背面具备阴极电极，并在正面具备阳极电极。应予说明，图1所示的陶瓷电路基板12上的半导体元件11的个数(1个)是一例，而不限于该情况，能够适当地根据设计来确定个数。
陶瓷电路基板12具有绝缘板12a、形成于绝缘板12a的正面的导电图案12b、以及形成于绝缘板12a的背面的金属板12c。
绝缘板12a由导热性优良的氧化铝、氮化铝、氮化硅等导热性好的陶瓷构成。绝缘板12a的厚度优选为0.2mm以上且1.5mm以下，更加优选为0.25mm以上且1.0mm以下。
导电图案12b由导电性优良的材质构成。作为这样的材质，例如由铜、铝或至少包含它们中的一种的合金等构成。导电图案12b的厚度优选为0.1mm以上且1.0mm以下，更加优选为0.125mm以上且0.6mm以下。
半导体元件11分别经由焊料17a而接合于这样的导电图案12b上。应予说明，在这样的导电图案12b上，除了半导体元件11以外，还能够适当地配置热敏电阻、电容器等电子部件，接合线，引线框、连接端子等布线部件。此外，在图1中，示出了导电图案12b与后述的连接端子15的另一端部通过接合线16电连接的情况。由此，半导体元件11的背面的主电极经由导电图案12b和接合线16而与连接端子15电连接。另外，导电图案12b与连接端子15的电连接不限于使用接合线16，也可以使用另外的引线框。或者，也能够将连接端子15的另一端部延伸并直接与导电图案12b连接。
另外，导电图案12b能够利用耐腐蚀性优良的材质进行镀覆处理。这样的材质例如是铝、镍、钛、铬、钼、钽、铌、钨、钒、铋、锆、铪、金、银、铂、钯或至少包含它们中的一种的合金等。应予说明，图1～图3所示的导电图案12b的个数、配置位置以及形状也是一例，而不限于该情况，能够适当地根据设计来确定个数、配置位置以及形状。
金属板12c由导热性优良的铜、铝、铁、银或至少包含它们中的一种的合金等金属构成。金属板12c的厚度优选为0.1mm以上且1.0mm以下，更加优选为0.125mm以上且0.6mm以下。
作为具有这样的结构的陶瓷电路基板12，例如能够使用DCB(Direct CopperBonding：直接铜键合)基板、AMB(Active Metal Brazed：活性金属钎焊)基板。陶瓷电路基板12能够将由半导体元件11产生的热经由导电图案12b、绝缘板12a和金属板12c传导至散热板13侧。此外，绝缘板12a在俯视时例如呈矩形形状。另外，金属板12c在俯视时呈面积比绝缘板12a小的矩形形状。因此，陶瓷电路基板12例如呈矩形形状。
另外，图1～图3所示的陶瓷电路基板12的个数、配置位置以及形状也是一例，而不限于该情况，能够适当地根据设计来确定个数、配置位置以及形状。
散热板13如图1所示，陶瓷电路基板12经由焊料17b配置于散热板13的正面。这样的散热板13由导热性优良的例如铝、铁、银、铜或至少包含它们中的一种的合金构成。或者由包含铝和碳化硅的复合材料、包含镁和碳化硅的复合材料构成。另外，为了提高耐腐蚀性，例如也可以将镍等材料通过镀覆处理等形成于散热板13的表面。具体来说，除了镍以外，还有镍-磷合金、镍-硼合金等。
此外，也能够经由锡焊料或银焊料等在该散热板13的背面侧接合冷却器(省略图示)或者经由导热膏等机械性地安装冷却器，从而提高散热性。该情况下的冷却器例如由导热性优良的铝、铁、银、铜或至少包含它们中的一种的合金等构成。另外，作为冷却器，能够采用散热片、由多个散热片构成的散热器或利用水冷的冷却装置等。另外，散热板13也可以与这样的冷却器一体地构成。在该情况下，散热板13由导热性优良的铝、铁、银、铜或至少包含它们中的一种的合金构成。并且，为了提高耐腐蚀性，也可以通过镀覆处理等将例如镍等材料形成于与冷却器一体化的散热板的表面。具体来说，除了镍以外，还有镍-磷合金、镍-硼合金等。另外，也可以代替上述的散热板13，而经由焊料17b将上述的冷却器接合于陶瓷电路基板12的背面。
应予说明，在上述的半导体装置10中所使用的焊料17a、17b例如由无铅焊料构成，该无铅焊料以由锡-银-铜形成的合金、由锡-锌-铋形成的合金、由锡-铜形成的合金、由锡-银-铟-铋形成的合金之中的至少一种合金为主成分。此外，也可以还包含镍、锗、钴或硅等添加物。
外壳14具有框部14a和端子配置部14c。框部14a具备内壁部14b，所述内壁部14b围住中央部开口的俯视时为长方形形状的开口区域14a1，并面对开口区域14a1。应予说明，在第一实施方式中，仅图示了框部14a的一部分。端子配置部14c从框部14a的内壁部14b向开口区域14a1侧突出地构成。
对于这样的外壳14而言，对于框部14a从开口区域14a1的背侧使用粘接剂(省略图示)安装配置有半导体元件11和陶瓷电路基板12的散热板13。由此，半导体元件11和陶瓷电路基板12被收纳于开口区域14a1。此外，如图1所示，在外壳14的端子配置部14c的背面14c2与散热板13之间可以配置有密封树脂18。由此，由于连接端子15与散热板13之间的绝缘距离相对地变长，所以从致密地确保必要的绝缘性的观点出发是优选的。
另外，如后述，这样的外壳14由能够与实施了粗面化处理的连接端子15的内部端子部15a接合的树脂一体地构成。作为该树脂，有聚苯硫醚(PPS)、聚对苯二甲酸丁二醇酯(PBT)树脂、聚邻苯二甲酰胺(PPA)树脂、尼龙树脂(PA6、PA66)等。此外，也可以含有玻璃纤维、填料等填充剂。作为填料，从绝缘性的观点出发，优选氧化硅、氧化铝、氮化硼或氮化铝。
连接端子15通过嵌件成型安装于上述的外壳14的框部14a。这样的连接端子15通过内部端子部15a、连接部15b与外部端子部15c一体地连接而构成。
另外，关于连接端子15而言，外部端子部15c相对于外壳14的框部14a从框部14a的上表面14e向外部延伸，且连接部15b埋设于外壳14的框部14a。此外，连接端子15的内部端子部15a相对于外壳14的框部14a从内壁部14b向开口区域14a1侧突出地构成。另外，连接端子15的内部端子部15a埋设于端子配置部14c，至少其背面15a1固定连接于端子配置部14c，至少其正面15a2的一部分在开口区域14a1露出。
这样的连接端子15能够使用铜、铝、镍、铁或至少包含它们中的一种的合金。
内部端子部15a例如呈平板形状，开口区域14a1侧的前端部分的正面在端子配置部14c露出，其余的部分埋设于框部14a内。即，如图4的(A)所示，内部端子部15a设置于端子配置部14c的端子区域14c1上。在端子配置部14c的正面14c3，只有内部端子部15a的正面15a2露出，内部端子部15a的背面15a1和一对侧面15a3、15a4分别埋设于端子配置部14c。此外，内部端子部15a的第一前端部15a5与端子配置部14c的第二前端部14c5对齐。
内部端子部15a的正面15a2与半导体元件11电连接。此外，在图1中，内部端子部15a的正面15a2的露出部与陶瓷电路基板12的导电图案12b通过接合线16电连接，并经由导电图案12b与半导体元件11电连接。另外，在图3和图4中，内部端子部15a的正面15a2位于与端子配置部14c的正面14c3相同的高度。但是，内部端子部15a的正面15a2也可以位于比端子配置部14c的正面14c3靠上的位置或靠下的位置。
另外，内部端子部15a的背面15a1形成有粗面化区域15d。如图4的(B)所示，在粗面化区域15d形成有多个细微凹凸。例如，多个细微孔重叠地形成于粗面化区域15d。此外，该粗面化区域15d的详细情况在后面说明。
连接部15b与内部端子部15a的后端部分一体地连接，在框部14a内与内壁部14b平行地立起，并从框部14a的上表面14e突出。
外部端子部15c与连接部15b一体地连接，并沿着框部14a的上表面14e延伸。这样的外部端子部15c与外部电源(省略图示)等连接。
另外，如所述那样，密封树脂18被填充于框部14a的开口区域14a1，来将散热板13上的陶瓷电路基板12、半导体元件11、接合线16和连接端子15的内部端子部15a密封。这样的密封树脂18由环氧树脂、酚醛树脂、硅树脂、马来酰亚胺树脂等热固化性树脂形成。此外，作为填料，也可以含有氧化硅、氧化铝、氮化硼或氮化铝等填充材料。
这里，对具备连接端子15的外壳14的制造进行说明。
首先，准备在内部端子部15a的背面15a1未形成粗面化区域15d的连接端子15。在这样的连接端子15中，至少在内部端子部15a的背面15a1进行粗面化处理，来形成多个细微凹凸。由此，在内部端子部15a的背面15a1形成粗面化区域15d。粗面化区域15d的算术平均粗度Ra优选为0.1μm以上且1000μm以下。更加优选为0.2μm以上且500μm以下。在粗面化区域15d，如果算术平均粗度Ra过大，则会在凹部产生树脂的未填充部，这成为接合性变差的主要原因。另一方面，如果算术平均粗度Ra过小，则不会对构成外壳14的树脂发挥锚定效应，无法与外壳14固定连接。另外，在连接端子15中，至少内部端子部15a的正面15a2未进行粗面化处理。正面15a2的算术平均粗度Ra优选小于0.1μm。在正面15a2，如果算术平均粗度Ra过大，则与导电图案12b进行电连接的接合线16等布线部件的接合性下降，这成为引起短路的主要原因。此外，算术平均粗度Ra能够用激光显微镜、原子力显微镜等来测定。
作为粗面化处理的一例，有形成纳米级的多个凹窝(细微孔)的化学蚀刻处理。例如，将内部端子部15a的背面15a1浸泡在碱液中(脱脂处理)，再浸泡在酸液中(中和处理)。然后，通过浸泡在蚀刻液中，从而在背面15a1的表面形成多个平均直径为20nm以上且1000nm以下的细微孔。然后，将这样的连接端子15的内部端子部15a的背面15a1进行水洗，并用干燥机进行干燥。这样，在连接端子15的内部端子部15a的背面15a1形成粗面化区域15d。应予说明，这样的粗面化处理是一例，只要在连接端子15的内部端子部15a的背面15a1形成多个细微凹凸，则也可以是其他的处理、其他的方法。例如，能够使用激光加工、喷射加工、喷涂、切削、研磨加工、冲压加工等。
然后，通过嵌件成型来形成埋设有连接端子15的一部分的外壳14。例如，将这样的连接端子15置于预定的模具(省略图示)。将设置有连接端子15的模具加热到预定的温度，使聚苯硫醚、聚对苯二甲酸丁二醇酯树脂或聚邻苯二甲酰胺树脂、尼龙树脂等树脂流入模具内，并使流入的树脂固化。
如果拆下模具，则形成具备连接端子15的外壳14。
如果像这样在外壳14内形成连接端子15，则构成外壳14的树脂无间隙地侵入连接端子15的内部端子部15a的背面15a1的粗面化区域15d的细微凹凸。于是，这样的细微凹凸对树脂发挥锚定效应，连接端子15的内部端子部15a在粗面化区域15d牢固地固定连接于外壳14的端子配置部14c的端子区域14c1。
接着，对这样的外壳14的连接端子15的内部端子部15a附近的应力的分析结果进行说明。
首先，用图5来说明作为这样的分析对象的半导体装置10的模型。图5是表示第一实施方式的半导体装置的嵌件成型有连接端子的外壳的模型的图。此外，图5的(A)表示模型10a的剖面，图5的(B)表示在模型10a(图5的(A)中的虚线的圆形内)产生的裂缝起点14c4的一例。
图5的(A)所示的模型10a是模仿在半导体装置10的外壳14的端子配置部14c嵌件成型的连接端子15的内部端子部15a的附近而形成的模型。因此，对于与半导体装置10相同的结构标记相同的符号，并省略其说明。
另外，如图5的(B)所示，假设在模型10a的外壳14的端子配置部14c的端子区域14c1(例如，图5的(A)中的虚线的圆形内)产生了裂缝起点14c4。应予说明，假设这样的裂缝起点14c4例如高度H为15μm左右，直径W为2.5μm左右。
如所述，在使树脂流入模具中而形成的外壳14中，在从模具的多个注入口注入的树脂在模具内汇合并熔接的部分会生成细线的被称为熔接线的脆弱部分。有时该熔接线成为外观不良、因应力集中而导致的强度和韧性下降等的原因。如果在外壳14的端子配置部14c生成熔接线，则容易产生裂缝、伤痕等薄弱部。因此，考虑到这样的情况，在模型10a中使其含有上述那样的裂缝起点14c4。
对于这样的模型10a，分析了热循环试验的情况下在外壳14(端子配置部14c)产生的应力和形状变化。具体来说，分析了对模型10a赋予与从+175℃冷却至-50℃时相当的-225℃的温度变化之后的外壳14的应力。
用图6来说明此时的分析结果。图6是表示第一实施方式的半导体装置的嵌件成型有连接端子的外壳的应力分布的图。应予说明，在图6中，省略了粗面化区域15d和裂缝起点14c4的记载。另外，在图6中，按照应力的大小而用等值线(图6中的曲线组)表示应力所涉及的范围。
根据图6可知，由于端子配置部14c与内部端子部15a的热膨胀系数的差异，内部端子部15a稍微以凸状向上翘曲。但是，端子配置部14c的端子区域14c1与内部端子部15a的背面15a1之间固定连接。因此，内部端子部15a追随端子配置部14c的变形而变形，在端子配置部14c的端子区域14c1与内部端子部15a的背面15a1之间不产生间隙。
根据在图6中的端子配置部14c所示的多个等值线，越靠近内部端子部15a则应力越大，越离开内部端子部15a则应力越降低。另外，根据等值线的分布可知，等值线在整个端子配置部14c均匀地分布。由此认为，对于外壳14的整个端子配置部14c大致均匀地产生应力，应力未集中于一部分。另外可知，此时，在裂缝起点14c4的前端部，最大产生了55.6Mpa的应力。
这里，关于相对于这样的半导体装置10的多个参考例的模型中的应力进行说明。
首先，利用图7来说明参考例1的模型。图7是表示参考例1的嵌件成型有连接端子的外壳的模型的图。此外，图7的(A)表示模型20的剖面，图7的(B)表示在模型20(图7的(A)中的虚线的圆形内)产生的裂缝起点22a1的一例。
图7的(A)所示的模型20与图5所示的模型10a同样地，具有端子配置部22(外壳)、以及配置于端子配置部22的端子区域22a的连接端子的内部端子部21。内部端子部21的背面21a和侧面21c、21d埋设于端子配置部22，内部端子部21的正面21b位于与端子配置部22的正面22b相同的高度。
另外，模型20与图5所示的模型10a同样地，假设在模型20的外壳的端子配置部22的端子区域22a(例如，图7的(A)中的虚线的圆形内)，如图7的(B)所示地产生了裂缝起点22a1。此外，假设这样的裂缝起点22a1也是高度H为15μm左右，直径W为2.5μm左右。
即，模型20是在图5所示的模型10a中未形成粗面化区域15d的情况。
对于这样的模型20，也分析了进行与上述同样的热循环试验的情况下在外壳的端子配置部22产生的应力和形状变化。
用图8来说明此时的分析结果。图8是表示参考例1的嵌件成型有连接端子的外壳的模型的应力分布的图。此外，在图8中也省略了裂缝起点22a1的记载。另外，在图8中，按照应力的大小而用等值线(图8中的曲线组)表示应力所涉及的范围。
根据图8可知，由于端子配置部22与内部端子部21的热膨胀系数的差异，端子配置部22的端子区域22a稍微以凸状向上翘曲。在模型20的情况下，端子配置部22的端子区域22a与内部端子部21的背面21a之间未固定连接。因此，在端子配置部22的端子区域22a与内部端子部21的背面21a之间产生间隙。另外，在内部端子部21的侧面21c、21d的两侧也产生间隙。
根据在图8中的端子配置部22所示的多个等值线，越靠近内部端子部21的背面21a则应力越高，越从内部端子部21的背面21a往图8中的下方去则应力越降低。另外，根据等值线的分布可知，等值线不是在整个端子配置部22均匀地分布，而是在内部端子部21的背面21a的两端的正下方扭曲。由此认为，对于外壳的端子配置部22不是大致均匀地产生应力，而是应力集中于内部端子部21的背面21a的两端的正下方。
另外可知，此时，在裂缝起点22a1的前端部最大产生了91.1Mpa的应力。
接下来，用图9来说明参考例2的模型。图9是表示参考例2的嵌件成型有连接端子的外壳的模型的图。此外，在图9中，也与模型20同样地在模型30产生了裂缝起点，但省略了其图示。
图9所示的模型30与图7所示的模型20同样地具有内部端子部21。在模型30的内部端子部21以正面21b露出的方式埋设于端子配置部32。但是，端子配置部32形成为能够利用按压部32b1、32b2来按压内部端子部21的正面21b的左右两端的形状。
另外，虽然省略了图示，但模型30与模型20同样地在端子配置部32的端子区域32a形成有裂缝起点。
即，模型30是在图7所示的模型20中利用按压部32b1、32b2来按压内部端子部21的正面21b的两端的情况。
对于这样的模型30，也分析了进行与上述同样的热循环试验的情况下在外壳的端子配置部32产生的应力和形状变化。
用图10来说明此时的分析结果。图10是表示参考例2的嵌件成型有连接端子的外壳的模型的应力分布的图。此外，在图10中也省略了裂缝起点的记载。另外，在图10中，按照应力的大小而用等值线(图10中的曲线组)表示应力所涉及的范围。
根据图10可知，由于端子配置部32与内部端子部21的热膨胀系数的差异，内部端子部21稍微以凸状向上翘曲。在模型30的情况下，端子配置部32的端子区域32a与内部端子部21的背面21a之间未固定连接。虽然利用端子配置部32的按压部32b1、32b2抑制内部端子部21的翘曲，但是在内部端子部21的侧面21c、21d的两侧产生有间隙。
根据在图10中的端子配置部32所示的多个等值线，越靠近内部端子部21则应力越高，越从内部端子部21的背面21a往图10中的下方去则应力越降低。另外，根据等值线的分布可知，虽然等值线在整个端子配置部32分布，但在内部端子部21的侧面21c、21d的角部附近、内部端子部21的背面21a的两端的正下方，应力分布扭曲。由此认为，对于外壳的端子配置部32不是大致均匀地产生应力，而是应力集中于内部端子部21的侧面21c、21d的角部附近、以及背面21a的两端的正下方。
另外可知，此时，在裂缝起点的前端部最大产生了87.1Mpa的应力。
接下来，用图11来说明参考例3的模型。图11是表示参考例3的嵌件成型有连接端子的外壳的模型的图。此外，在图11中，也与模型20同样地在模型40产生了裂缝起点，但省略了其图示。
图11所示的模型40与图7所示的模型20同样地，内部端子部41以正面41b露出的方式埋设于端子配置部52。内部端子部41的背面41a和侧面41c、41d埋设于端子配置部52，内部端子部41的正面41b位于与端子配置部52的正面52b相同的高度。
但是，内部端子部41的正面41b的两侧的角部41c1、41d1形成有曲面。因此，埋设于端子配置部52的内部端子部41的角部41c1、41d1被端子配置部52按压。
另外，虽然省略了图示，但模型40与模型20同样地在端子配置部52的端子区域52a形成有裂缝起点。
即，模型40是在图7所示的模型20中，在内部端子部21的正面21b的两端的角部形成曲面而被端子配置部22按压的情况。
对于这样的模型40，也分析了进行与上述同样的热循环试验的情况下在外壳的端子配置部52产生的应力和形状变化。
用图12来说明此时的分析结果。图12是表示参考例3的嵌件成型有连接端子的外壳的模型的应力分布的图。此外，在图12中也省略了裂缝起点的记载。另外，在图12中，也按照应力的大小而用等值线(图12中的曲线组)表示应力所涉及的范围。
根据图12可知，由于端子配置部52与内部端子部41的热膨胀系数的差异，端子配置部52的端子区域52a以凸状向上翘曲。在模型40的情况下，端子配置部52的端子区域52a与内部端子部41的背面41a之间也未固定连接。虽然利用端子配置部52来按压内部端子部41的角部41c1、41d1而抑制了内部端子部41的翘曲，但是在内部端子部41的背面41a的两侧(侧面41c、41d侧)以及侧面41c、41d都产生有间隙。
根据在图12中的端子配置部52所示的多个等值线，越靠近内部端子部41则应力越高，越从内部端子部41的背面41a往图12中的下方去则应力越降低。另外，根据等值线的分布可知，虽然等值线在整个端子配置部52分布，但在内部端子部41的侧面41c、41d的角部附近、内部端子部41的背面41a的两端的下方，应力分布扭曲。由此认为，对于外壳的端子配置部52不是大致均匀地产生应力，而是应力集中于内部端子部41的侧面41c、41d的角部附近、以及背面41a的两端的下方。
另外可知，此时，在裂缝起点的前端部最大产生了94.4Mpa的应力。
接下来，用图13来说明在上述的模型10a、20、30、40的裂缝起点的前端部产生的应力。图13是表示嵌件成型有连接端子的外壳内的裂缝起点前端部的应力的图表。应予说明，图13的横轴表示各要素(第一实施方式(模型10a：图6)、参考例1(模型20：图8)、参考例2(模型30：图10)、参考例3(模型40：图12))。另外，图13的纵轴表示在裂缝起点的前端部产生的应力。
根据该图表可知，在第一实施方式的半导体装置10(模型10a)中，在裂缝起点的前端部产生的应力被抑制。关于此，考虑是以下的原因。
即，在半导体装置10中，在连接端子15的内部端子部15a的背面15a1形成有由多个细微凹凸构成的粗面化区域15d。如果这样的连接端子15被嵌件成型于外壳14，则构成外壳14的树脂无间隙地侵入连接端子15的内部端子部15a的背面15a1的粗面化区域15d的细微凹凸。如果以该状态使树脂固化而构成外壳14，则连接端子15的内部端子部15a的背面15a1与外壳14的端子配置部14c的端子区域14c1固定连接。因此，即使半导体装置10暴露于热变化，连接端子15的内部端子部15a也会追随外壳14的端子配置部14c的变形而变形。因此，对外壳14的整个端子配置部14c均匀地产生应力，对于端子配置部14c所包含的薄弱部的应力集中被降低。其结果是，能够也降低在裂缝起点产生的应力，从而抑制裂缝的产生、伸展。
上述半导体装置10具有：半导体元件11；连接端子15，与半导体元件11电连接；以及外壳14，其具备框部14a和端子配置部14c，所述框部14a围住收纳半导体元件11的开口区域14a1并埋设连接端子15的一部分，所述端子配置部14c从框部14a向开口区域14a1侧突出。进而，半导体装置10的连接端子15具备内部端子部15a，所述内部端子部15a从框部14a向开口区域14a1伸出，并且所述内部端子部15a的与半导体元件11电连接的正面在开口区域14a1露出，背面与端子配置部14c固定连接。
这样，在半导体装置10中，连接端子15的内部端子部15a的背面15a1与外壳14的端子配置部14c固定连接。因此，即使半导体装置10暴露于热变化，连接端子15的内部端子部15a也会追随外壳14的端子配置部14c的变形而变形。因此，对于外壳14的整个端子配置部14c均匀地产生应力，对于端子配置部14c的薄弱部的应力集中被降低。其结果是，能够也降低在裂缝起点产生的应力，从而抑制裂缝的产生、伸展。因此，能够抑制半导体装置10的可靠性的下降。
另外，在这样的半导体装置10中，由于用于形成外壳14的树脂不受外壳14的机械强度的制约地进行选择，所以树脂选择的自由度提高。
此外，在这样的半导体装置10中，由于能够不受结构上的弱点的存在的制约地进行结构设计，所以结构设计的自由度提高。
应予说明，在第一实施方式中，列举在连接端子15的内部端子部15a的背面15a1进行粗面化处理来形成粗面化区域15d的情况为例进行了说明。粗面化处理除了在连接端子15的内部端子部15a的背面15a1进行以外，还可以在侧面15a3、15a4进行。由此，连接端子15的内部端子部15a相对于外壳14的端子配置部14c更牢固地固定连接。
[第二实施方式]
在第二实施方式中，用图14和图15来说明连接端子与第一实施方式不同的情况。图14是表示第二实施方式的半导体装置的一例的主要部分剖视图，图15是第二实施方式的半导体装置的连接端子的主要部分放大图。应予说明，在图14所示的半导体装置10b所具有的结构与半导体装置10相同的情况下，标记相同的符号，并省略详细的说明。图15是相当于第一实施方式的图4的(A)的图，是图14的单点划线X-X的剖视图中的内部端子部25a附近的立体图。另外，图15的(A)、图15的(B)分别表示连接端子25的不同的内部端子部25a。
半导体装置10b所具有的连接端子25通过嵌件成型而安装于外壳14的框部14a的一对短边。这样的连接端子25通过内部端子部25a、连接部15b与外部端子部15c一体地连接而构成。与第一实施方式同样地，连接端子25能够使用铜、铝、镍、铁或至少包含它们中的一种的合金。
内部端子部25a也呈平板形状，开口区域14a1侧的前端部分的正面25a2在外壳14的端子配置部14c露出，其余的部分配置于外壳14内。即，如图14所示，内部端子部25a设置于外壳14的端子配置部14c的端子区域14c1上。在外壳14的端子配置部14c的正面14c3，只有内部端子部25a的正面25a2露出，内部端子部25a的背面25a1和侧面25a3、25a4分别埋设于端子配置部14c。
内部端子部25a的正面25a2与半导体元件11电连接。此外，在图14中，内部端子部25a的正面25a2的露出部与陶瓷电路基板12的导电图案12b通过接合线16电连接，并经由导电图案12b与半导体元件11电连接。另外，在图14和图15中，内部端子部25a的正面25a2也位于与端子配置部14c的正面14c3相同的高度，或者也可以位于比正面14c3靠上的位置或靠下的位置。并且，在内部端子部25a的背面25a1(的与端子配置部14c接触的区域)也形成有粗面化区域15d。此外，在内部端子部25a的背面25a1形成粗面化区域15d的形成方法与第一实施方式相同。
另外，这样的内部端子部25a的第一前端部25a5从端子配置部14c的第二前端部14c5向开口区域14a1侧突出。
此外，内部端子部25a的第一前端部25a5存在例如如图15的(A)所示那样，第一前端部25a5的整个面突出的情况。或者存在如图15的(B)所示那样，只有内部端子部25a中的中央部的第一前端部25a5突出，第一前端部25a5的两侧部与端子配置部14c的第二前端部14c5对齐而构成台阶的情况。
这里，作为参考例，用图16来说明嵌件成型有连接端子的外壳14(端子配置部14c)。图16是用于说明参考例4的嵌件成型有连接端子的外壳的图。此外，图16的(A)示出了被埋设于端子配置部14c的连接端子的内部端子部35a的第一前端部不露出而被埋入的情况。另外，图16的(B)示出了埋设于端子配置部14c的连接端子的内部端子部45a只有第一前端部45a5的中央部突出，而第一前端部45a的台阶部被埋入的情况。
首先，在图16的(A)所示的情况下，如果覆盖内部端子部35a的第一前端部35a5的端子配置部14c薄，则容易以此处为起点，例如沿图16的(A)中的虚线所示而产生裂缝并伸展。为了防止该情况，考虑使覆盖内部端子部35a的第一前端部35a5的端子配置部14c变厚，但会导致外壳14本身变大而难以小型化。
另外，在图16的(B)所示的情况下，如果覆盖内部端子部45a的第一前端部45a5的台阶的端子配置部14c薄，则与上述同样地，容易以此处为起点，例如沿图16的(B)中的虚线所示而产生裂缝并伸展。为了防止该情况，考虑使覆盖内部端子部45a的第一前端部45a5的端子配置部14c变厚，但会导致外壳14本身变大而难以小型化。
因此，鉴于这些情况，优选如图15的(A)所示，连接端子的内部端子部25a的第一前端部25a5从端子配置部14c的第二前端部14c5露出。另外，更加优选地，如图15的(B)所示，只有连接端子的内部端子部25a的中央部的第一前端部25a5突出，而第一前端部25a5的两侧部与端子配置部14c的第二前端部14c5对齐，包含台阶地从端子配置部14c的第二前端部14c5露出。
具备这样的连接端子25的外壳14也与第一实施方式同样地制造。
即，首先，准备在连接端子25的内部端子部25a的背面25a1未形成粗面化区域15d的连接端子25，并在内部端子部25a的背面25a1进行粗面化处理，来形成粗面化区域15d。应予说明，此时，关于图15的(B)所示的内部端子部25a而言，预先将中央部的第一前端部25a5的两侧削掉。
然后，将这样的连接端子25置于预定的模具(省略图示)。将设置有连接端子25的模具加热至预定的温度，使聚苯硫醚、聚对苯二甲酸丁二醇酯树脂或聚邻苯二甲酰胺树脂、尼龙树脂等树脂流入模具内，并使树脂固化。如果拆下模具，则形成具备连接端子25的外壳14。
连接端子25的内部端子部25a牢固地固定连接于这样形成的外壳14的端子配置部14c的端子区域14c1。
但是，在像这样使树脂流入模具时，在如第一实施方式那样，连接端子15的内部端子部15a的第一前端部15a5与外壳14的端子配置部14c的第二前端部14c5对齐的情况(参照图1)下，如果连接端子15相对于模具设置不良，则有可能在内部端子部15a的第一前端部15a5与模具之间产生间隙。在该情况下，树脂会流入间隙而在第一前端部15a5形成毛刺。在第一前端部15a5产生毛刺的情况下，有可能以此处为起点而生成裂缝、伤痕等。
另一方面，在连接端子25的内部端子部25a的第一前端部25a5比外壳14的端子配置部14c的第二前端部14c5突出的情况下，由于能够将突出部向模具固定，所以不存在树脂会进入的间隙，在第一前端部25a5不会形成毛刺。因此，在使注入的树脂固化来形成外壳14时，端子配置部14c也可适当地形成，减少在端子配置部14c产生裂缝、伤痕等的情况。
在上述半导体装置10b中，连接端子25的内部端子部25a的背面25a1也与外壳14的端子配置部14c固定连接。因此，即使半导体装置10b暴露于热变化，连接端子25的内部端子部25a也会追随外壳14的端子配置部14c的变形而变形。因此，对于外壳14的整个端子配置部14c均匀地产生应力，对于端子配置部14c的薄弱部的应力集中被降低。
另外，在半导体装置10b中，连接端子25的内部端子部25a的第一前端部25a5比外壳14的端子配置部14c的第二前端部14c5向开口区域14a1侧突出。因此，使外壳14的端子配置部14c减少裂缝等的产生。因此，能够减少端子配置部14c的薄弱部的产生。
其结果是，能够也降低在裂缝起点产生的应力，从而抑制裂缝的产生、伸展，或者能够抑制裂缝本身的生成。因此，能够抑制半导体装置10b的可靠性的下降。

Claims (11)

1.一种半导体装置，其特征在于，具有：
半导体元件；
连接端子，其与所述半导体元件电连接；以及
外壳，其具备框部和端子配置部，所述框部围住收纳所述半导体元件的开口区域并埋设有所述连接端子的一部分，所述端子配置部从所述框部向所述开口区域侧突出，
所述连接端子具有内部端子部，该内部端子部从所述框部向所述开口区域伸出，并且其与所述半导体元件电连接的正面在所述开口区域露出，背面与所述端子配置部固定连接。
2.根据权利要求1所述的半导体装置，其特征在于，
所述内部端子部在所述背面形成有粗面化区域，在所述粗面化区域形成有多个细微凹凸。
3.根据权利要求2所述的半导体装置，其特征在于，
所述多个细微凹凸的算术平均粗度是0.1μm以上且1000μm以下。
4.根据权利要求2或3所述的半导体装置，其特征在于，
所述内部端子部在所述背面的所述粗面化区域形成有多个细微孔。
5.根据权利要求4所述的半导体装置，其特征在于，
所述多个细微孔的平均直径是20nm以上且1000nm以下。
6.根据权利要求2所述的半导体装置，其特征在于，
所述内部端子部具备一对侧面，所述一对侧面与所述正面和所述背面垂直，并埋设于所述端子配置部，
在所述一对侧面形成有所述粗面化区域。
7.根据权利要求1所述的半导体装置，其特征在于，
所述连接端子由铜、铝、镍、铁或至少包含它们中的一种的合金构成。
8.根据权利要求1所述的半导体装置，其特征在于，
所述外壳由聚苯硫醚、聚对苯二甲酸丁二醇酯树脂、聚邻苯二甲酰胺树脂或尼龙树脂构成。
9.根据权利要求1所述的半导体装置，其特征在于，
所述内部端子部的位于所述开口区域侧的第一前端部从所述端子配置部向所述开口区域侧露出。
10.根据权利要求9所述的半导体装置，其特征在于，
所述第一前端部比所述端子配置部的位于所述开口区域侧的第二前端部更向所述开口区域侧突出。
11.根据权利要求10所述的半导体装置，其特征在于，
所述第一前端部的两侧部与所述第二前端部对齐，所述第一前端部的中央部比所述第二前端部更向所述开口区域突出，在所述内部端子部构成有台阶。
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