CN110257895A - A kind of electrolytic polishing method and device of semiconductor material - Google Patents
A kind of electrolytic polishing method and device of semiconductor material Download PDFInfo
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- CN110257895A CN110257895A CN201910551401.9A CN201910551401A CN110257895A CN 110257895 A CN110257895 A CN 110257895A CN 201910551401 A CN201910551401 A CN 201910551401A CN 110257895 A CN110257895 A CN 110257895A
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- 239000000463 material Substances 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000005498 polishing Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000003792 electrolyte Substances 0.000 claims abstract description 72
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 238000000227 grinding Methods 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000003756 stirring Methods 0.000 claims description 40
- 239000000919 ceramic Substances 0.000 claims description 22
- 238000005485 electric heating Methods 0.000 claims description 19
- 238000005868 electrolysis reaction Methods 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 239000013589 supplement Substances 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017435 S2 In Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Abstract
The invention discloses a kind of electrolytic buffing attachment of semiconductor material, including bottom plate, erection seat is fixedly connected on the upper end side wall of the bottom plate, the upper end of described device seat is equipped with electrolytic cell；The invention also provides a kind of electrolytic polishing methods of semiconductor material, the following steps are included: S1, preparation before carrying out electrobrightening to the anode of multiple polished semiconductor materials, primary manual grinding processing is carried out to the surface of anode, the remaining impurity of anode surface is removed, and anode surface is cleaned using clear water.Structure of the invention is reasonable, it is easy to use, and it is provided with heating device and lifting rabbling mechanism, the temperature that electrolyte is improved by heating device is conducive to the speed for accelerating electrobrightening, by going up and down rabbling mechanism, it can promote the flowing of electrolyte, the supplement of the ion diffusion and new electrolyte that can guarantee polishing area again improves the efficiency of electrobrightening to promote the electrobrightening of anode.
Description
Technical field
The present invention relates to semiconductor material processing technique field more particularly to a kind of electrolytic polishing methods of semiconductor material
And device.
Background technique
The material of nature can be divided into conductor, semiconductor and insulator three categories by conductive capability size, wherein semiconductor
Material be it is a kind of there is semiconducting behavior, i.e. conductive capability between conductor and insulator, resistivity about 1m Ω cm~
Within the scope of 1G Ω cm, and it can be used to make the electronic material of semiconductor devices and integrated circuit.
The abrasive materials processing such as grinding and grinding is production semiconductor wafer necessity mode, polishes and planarizes to production microelectronics
Be highly important, the traditional most common polishing mode for original part it is mechanical polishing, however mechanically polishes and not only time-consuming take
Power, easily causes the error of thickness, the depth of parallelism, and the surface integrity that will lead to semiconductor material is deteriorated, and easily occurs broken
Rhegma is bad, therefore can replace mechanically polishing by electrobrightening, and electrobrightening refers to polished material in the electricity of definite composition
Special anode processing is carried out in solution solution, to obtain the finish process of smooth, glossy surface, Lai Tigao semiconductor material
Machining accuracy, during electrobrightening, general temperature is higher, and the speed of polishing and leveling is also faster, and electrobrightening
When stir electrolyte, the flowing of electrolyte can be promoted, guarantee optimum polishing condition.
The electrolytic buffing attachment structure of existing semiconductor material is simple, and typically setting anode will be polished
Workpiece by anode and cathode by electrical communication, and passes to direct current and carries out electrobrightening, but can not improve electrolyte
Temperature, and lack the function of stirring electrolyte, and temperature and stirring all have electrobrightening speed certain influence, this makes
Electrobrightening speed it is slow, low efficiency, thus we have proposed a kind of electrolytic polishing method of semiconductor material and device,
For solving the above problems.
Summary of the invention
The purpose of the present invention is to solve disadvantages existing in the prior art, and a kind of electricity of the semiconductor material proposed
Polishing method and device are solved, it is structurally reasonable, it is easy to use, and it is provided with heating device and lifting rabbling mechanism, pass through heating
Device improves the temperature of electrolyte, and the speed for being conducive to accelerate electrobrightening can promote electrolyte by going up and down rabbling mechanism
Flowing, and can guarantee that the ion diffusion of polishing area and the supplement of new electrolyte mention to promote the electrobrightening of anode
The high efficiency of electrobrightening.
To achieve the goals above, present invention employs following technical solutions:
A kind of electrolytic buffing attachment of semiconductor material, including bottom plate are fixedly connected on the upper end side wall of the bottom plate
Erection seat, the upper end of described device seat are equipped with electrolytic cell, and the electrolytic cell is equipped with opening up electrolytic cell, the electrolytic cell
Side side wall be equipped with constant-current supply, the electrolytic cell is fixedly connected with cathode, institute on the inner wall of constant-current supply side
Stating cathode is platinum electrode, is fixedly connected with bearing pads in the bottom interior wall of the electrolytic cell, the cathode by the first conducting wire with
The cathode of constant-current supply is electrically connected, and is electrically connected on the side side wall of the bearing pads by the anode of the second conducting wire and constant-current supply
It connecing, spacing are equipped with multiple anodes on the upper end side wall of the bearing pads etc., and multiple anodes are polished semiconductor material,
The electrolytic cell is built-in to fill electrolyte, the electrolyte submergence cathode and anode, is equipped with heating device, institute in described device seat
It states bottom plate and is equipped with lifting rabbling mechanism.
Preferably, spacing are equipped with multiple bearing grooves on the upper end side wall of the bearing pads etc., and multiple anodes are set respectively
It sets in multiple bearing grooves, multiple anodes pass through conducting resinl and are electrically connected with bearing pads.
Preferably, the heating device includes the ceramic electric heating plate being arranged in the side wall of erection seat, described device seat
Upper end side wall be equipped with placing groove corresponding with electrolytic cell position, the lower end of the electrolytic cell is located in placing groove, described
The underface of placing groove is arranged in ceramic electric heating plate.
Preferably, mounting plate, the bottom side of the wall of the constant-current supply are fixedly connected on the side side wall of the electrolytic cell
It is fixedly connected with the upper end side wall of mounting plate.
Preferably, the lifting rabbling mechanism includes the electric pushrod being fixedly connected on the upper end side wall of bottom plate, described
The endways of electric pushrod output shaft are fixedly connected with top plate, are fixedly connected on the upper end side wall of the top plate by mounting base
There is a motor, jointly through through-hole is equipped on the side wall of the mounting base and top plate, the through-hole and electrolytic cell are concentric setting,
The end of the motor output shaft is through through-hole and is fixedly connected with stirring frame, and the output shaft of the motor passes through bearing and through-hole
Inner wall rotation connection, multiple agitating shafts are equidistantly equipped on the two sides side wall of the stirring frame, multiple agitating shafts are equal
It is fixedly connected by link block with the two sides side wall of stirring frame.
Preferably, the stirring frame is set as rectangular box, and the quantity of multiple agitating shafts is at least five, Duo Gesuo
It states agitating shaft and is shaped to strip rectangle, length phase is distinguished in the multiple one end of the agitating shaft far from stirring frame between any two
Between be arranged.
Preferably, there are two symmetrical handles for rotation connection respectively on the side wall of the electrolytic cell.
The invention also provides a kind of electrolytic polishing methods of semiconductor material, comprising the following steps:
S1, the preparation before electrobrightening is carried out to the anode of multiple polished semiconductor materials, to the surface of anode into
Row primary manual grinding processing, removes the remaining impurity of anode surface, and clean using clear water to anode surface；
The anode of multiple polished semiconductor materials is passed sequentially through conducting resin adhesion and is fixed in multiple bearing grooves by S2；
S3 pours into prepared appropriate electrolyte in the electrolytic cell on electrolytic cell, it is ensured that electrolyte can submerge cathode and
Anode can't overflow electrolytic cell, and cathode and anode are electrically connected by electrolyte and constant-current supply at this time is connected into a circuit；
S4 is lifted electrolytic cell in the placing groove being placed on erection seat by handle, by ceramic electric heating plate, electronic is pushed away
Bar, motor are electrically connected with external power supply respectively, and are started；
S5, ceramic electric heating plate can suitably heat the electrolyte in electrolytic cell at this time, make its temperature be located at 30 DEG C-
Between 70 DEG C, electric pushrod drives stirring frame, agitating shaft and link block on top plate to immerse in electrolyte, and motor can drive stirring
Frame and agitating shaft rotation are stirred electrolyte, to promote the electrobrightening of anode；
S6, according to the situation of electrobrightening, after anode electrolysis polishing, make electric pushrod drive the stirring frame on top plate,
Agitating shaft and link block remove electrolyte, and ceramic electric heating plate, electric pushrod, motor are then disconnected electricity with external power supply respectively
Connection, and be turned off, clean up electrolyte in time and take out anode.
The invention has the following advantages:
1, by the way that heating device is arranged on the erection seat of electrolytic cell lower end, ceramic electric heating plate can be to the electricity in electrolytic cell
Solution liquid is suitably heated, and is made its temperature between 30 DEG C -70 DEG C, is improved the temperature of electrolyte, is conducive to accelerate electrolysis throwing
The speed of light improves the efficiency of electrobrightening；
2, by the way that lifting rabbling mechanism is arranged on bottom plate, electric pushrod drives stirring frame, agitating shaft and the company on top plate
It connects block to immerse in electrolyte, motor can drive stirring frame and agitating shaft to rotate and be stirred electrolyte, can promote electrolyte
Flowing, and can guarantee polishing area ion diffusion and new electrolyte supplement, and make electrolysis temperature difference reduce, guarantee it is most suitable
The effect of stirring can be improved to promote the electrobrightening of anode, and the structure novel of stirring frame and agitating shaft in suitable polishing condition
Fruit is conducive to be sufficiently stirred；
3, convenient that electrolytic cell is lifted by handle by the way that wooden handle is arranged on electrolytic cell, it is more convenient to use；
4, by the way that multiple anodes are arranged, and multiple anodes are submerged in electrolyte, so that the area of electrobrightening increases,
Be conducive to improve efficiency.
In conclusion structure of the invention is reasonable, it is easy to use, and it is provided with heating device and lifting rabbling mechanism, pass through
Heating device improves the temperature of electrolyte, and the speed for being conducive to accelerate electrobrightening can promote electricity by going up and down rabbling mechanism
The flowing of liquid is solved, and can guarantee the supplement of the ion diffusion and new electrolyte of polishing area, so that the electrolysis for promoting anode is thrown
Light improves the efficiency of electrobrightening.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the electrolytic buffing attachment of semiconductor material proposed by the present invention；
Fig. 2 is schematic enlarged-scale view at A in Fig. 1；
Structural schematic diagram when Fig. 3 is a kind of electrolytic buffing attachment stirring of semiconductor material proposed by the present invention；
Fig. 4 is a kind of surface structure schematic diagram of the electrolytic buffing attachment of semiconductor material proposed by the present invention.
In figure: 1 bottom plate, 2 erection seats, 3 electrolytic cells, 4 electrolytic cells, 5 constant-current supplies, 6 cathodes, 7 bearing pads, 8 first conducting wires,
9 second conducting wires, 10 bearing grooves, 11 anodes, 12 conducting resinls, 13 electrolyte, 14 placing grooves, 15 ceramic electric heating plates, 16 mounting plates,
17 electric pushrods, 18 top plates, 19 mounting bases, 20 motors, 21 through-holes, 22 stirring frames, 23 agitating shafts, 24 link blocks, 25 handles.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.
In the description of the present invention, it is to be understood that, term " on ", "lower", "front", "rear", "left", "right", "top",
The orientation or positional relationship of the instructions such as "bottom", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, merely to just
In description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with
Specific orientation construction and operation, therefore be not considered as limiting the invention.
Referring to Fig.1-4, a kind of electrolytic buffing attachment of semiconductor material, including bottom plate 1, it is solid on the upper end side wall of bottom plate 1
Surely it is connected with erection seat 2, the upper end of erection seat 2 is equipped with electrolytic cell 3, and electrolytic cell 3 is equipped with opening up electrolytic cell 4, electrolysis
The side side wall in pond 3 is equipped with constant-current supply 5, and electrolytic cell 4 is fixedly connected with cathode 6 on the inner wall of 5 side of constant-current supply,
Cathode 6 is platinum electrode, and bearing pads 7 are fixedly connected in the bottom interior wall of electrolytic cell 4, and cathode 6 passes through the first conducting wire 8 and Constant Electric Current
The cathode in source 5 is electrically connected, and is electrically connected, is carried with the anode of constant-current supply 5 by the second conducting wire 9 on the side side wall of bearing pads 7
Spacing are equipped with multiple anodes 11 on the upper end side wall of pad 7 etc., and multiple anodes 11 are polished semiconductor material, in electrolytic cell 4
Electrolyte 13 is contained, electrolyte 13 submerges cathode 6 and anode 11, and heating device is equipped in erection seat 2, and bottom plate 1, which is equipped with, to be risen
Rabbling mechanism drops, and by the way that multiple anodes 11 are arranged, and multiple anodes 11 are submerged in electrolyte 13, so that the face of electrobrightening
Product increases, and is conducive to improve efficiency.
Wherein, spacing are equipped with multiple bearing grooves 10 on the upper end side wall of bearing pads 7 etc., and multiple anodes 11 are separately positioned on more
In a bearing groove 10, multiple anodes 11 are electrically connected by conducting resinl 12 with bearing pads 7, before 11 electrobrightening of anode, first will
The anode 11 of multiple polished semiconductor materials passes sequentially through 12 adhesion of conducting resinl and is fixed in multiple bearing grooves 10, and will prepare
Good appropriate electrolyte 13 pours into the electrolytic cell 4 on electrolytic cell 3, it is ensured that electrolyte 13 can submerge cathode 6 and anode 11 not
Electrolytic cell 3 can be overflowed, cathode 6 and anode 11 are electrically connected by electrolyte 13 and constant-current supply 5 at this time is connected into a circuit.
Wherein, heating device includes the ceramic electric heating plate 15 being arranged in the side wall of erection seat 2, the upper end of erection seat 2
Side wall is equipped with placing groove 14 corresponding with 3 position of electrolytic cell, and the lower end of electrolytic cell 3 is located in placing groove 14, and ceramic electrical adds
The underface of placing groove 14 is arranged in hot plate 15, and electrolytic cell 3 is lifted in the placing groove 14 being placed on erection seat 2, will be ceramic
Electric boiling plate 15 is electrically connected with external power supply, and is started, and ceramic electric heating plate 15 can be to the electrolyte in electrolytic cell 3 at this time
13 are suitably heated, and make its temperature between 30 DEG C -70 DEG C, improve the temperature of electrolyte 13, are conducive to accelerate electrolysis throwing
The speed of light improves the efficiency of electrobrightening.
Wherein, being fixedly connected by welding on the side side wall of electrolytic cell 3 has mounting plate 16, the lower end side of constant-current supply 5
Wall is fixedly connected with the upper end side wall of mounting plate 16.
Wherein, lifting rabbling mechanism includes the electric pushrod 17 being fixedly connected by welding on the upper end side wall of bottom plate 1,
The endways of 17 output shaft of electric pushrod, which are fixedly connected by welding, top plate 18, passes through installation on the upper end side wall of top plate 18
Seat 19 is fixedly connected with motor 20, jointly through being equipped with through-hole 21, through-hole 21 and electrolysis on the side wall of mounting base 19 and top plate 18
Pond 3 is concentric setting, and motor 20 exports the tip of the axis through through-hole 21 and is fixedly connected with stirring frame 22, the output of motor 20
Axis is rotatablely connected by the inner wall of bearing and through-hole 21, and multiple agitating shafts are equidistantly equipped on the two sides side wall of stirring frame 22
23, multiple agitating shafts 23 are fixedly connected by link block 24 with the two sides side wall of stirring frame 22, by electric pushrod 17, motor 20
It is electrically connected, and is started with external power supply respectively, electric pushrod 17 drives stirring frame 22, agitating shaft 23 and company on top plate 18
It connects block 24 to immerse in electrolyte 13, motor 20 can drive stirring frame 22 and agitating shaft 23 to rotate and be stirred electrolyte 13, both
It can promote the flowing of electrolyte 13, and can guarantee the supplement of the ion diffusion and new electrolyte 13 of polishing area, and make electrolysis temperature
Degree difference reduces, and guarantees optimum polishing condition, to promote the electrobrightening of anode 11.
Wherein, stirring frame 22 is set as rectangular box, and the quantity of multiple agitating shafts 23 is at least five, multiple agitating shafts 23
It is shaped to strip rectangle, the alternate setting of length is distinguished in the multiple one end of agitating shaft 23 far from stirring frame 22 between any two,
The effect that stirring can be improved is conducive to be sufficiently stirred.
Wherein, it is rotatablely connected respectively on the side wall of electrolytic cell 3 there are two symmetrical handle 25, the material of handle 25 is
It is wooden, it is convenient that electrolytic cell 3 is lifted by handle 25, it is more convenient to use.
The present invention also proposes a kind of electrolytic polishing method of semiconductor material, comprising the following steps:
S1, the preparation before electrobrightening is carried out to the anode 11 of multiple polished semiconductor materials, to the table of anode 11
Face carries out primary manual grinding processing, removes the impurity remained on surface of anode 11, and it is clear to use clear water to carry out on 11 surface of anode
It washes；
The anode 11 of multiple polished semiconductor materials is passed sequentially through 12 adhesion of conducting resinl and is fixed on multiple bearing grooves by S2
In 10；
S3 pours into prepared appropriate electrolyte 13 in the electrolytic cell 4 on electrolytic cell 3, it is ensured that electrolyte 13 can submerge
Cathode 6 and anode 11 can't overflow electrolytic cell 3, and cathode 6 and anode 11 are electrically connected by electrolyte 13 with constant-current supply 5 at this time
At a circuit；
S4 is lifted electrolytic cell 3 in the placing groove 14 being placed on erection seat 2 by handle 25, by ceramic electric heating plate
15, electric pushrod 17, motor 20 are electrically connected with external power supply respectively, and are started；
S5, ceramic electric heating plate 15 can suitably heat the electrolyte 13 in electrolytic cell 3 at this time, be located at its temperature
Between 30 DEG C -70 DEG C, the temperature of electrolyte 13 is improved, is conducive to the speed for accelerating electrobrightening, improves the efficiency of electrobrightening,
Electric pushrod 17 drives stirring frame 22, agitating shaft 23 and link block 24 on top plate 18 to immerse in electrolyte 13, and motor 20 can band
Dynamic stirring frame 22 and the rotation of agitating shaft 23 are stirred electrolyte 13, can promote the flowing of electrolyte 13 and throw
The supplement of the ion diffusion and new electrolyte 13 in light region, and reduce electrolysis temperature difference, guarantee optimum polishing condition, from
And promote the electrobrightening of anode 11；
S6 after 11 electrobrightening of anode, makes electric pushrod 17 drive stirring on top plate 18 according to the situation of electrobrightening
It mixes frame 22, agitating shaft 23 and link block 24 and removes electrolyte 13, then by ceramic electric heating plate 15, electric pushrod 17, motor 20
It is electrically connected respectively with external power supply disconnection, and is turned off, cleans up electrolyte in time and takes out anode 11.
In the present invention, before electrobrightening, primary manual grinding processing first is carried out to the surface of anode 11, removes 11 table of anode
The remaining impurity in face, and 11 surface of anode is cleaned using clear water, then by the anode of multiple polished semiconductor materials
11, which pass sequentially through 12 adhesion of conducting resinl, is fixed in multiple bearing grooves 10, then prepared appropriate electrolyte 13 is poured into electrolytic cell
In electrolytic cell 4 on 3, it is ensured that electrolyte 13, which can submerge cathode 6 and anode 11, can't overflow electrolytic cell 3, at this time cathode 6 and sun
Pole 11 is electrically connected by electrolyte 13 and constant-current supply 5 and is connected into a circuit, is lifted electrolytic cell 3 by handle 25 and is placed on device
In placing groove 14 on seat 2, ceramic electric heating plate 15, electric pushrod 17, motor 20 are electrically connected with external power supply respectively, and will
It starts, and ceramic electric heating plate 15 can suitably heat the electrolyte 13 in electrolytic cell 3 at this time, its temperature is made to be located at 30
Between DEG C -70 DEG C, be conducive to the speed for accelerating electrobrightening, improve the efficiency of electrobrightening, electric pushrod 17 drives top plate 18
On stirring frame 22, agitating shaft 23 and link block 24 immerse in electrolyte 13, motor 20 can drive stirring frame 22 and agitating shaft 23
Rotation is stirred electrolyte 13, can promote the flowing of electrolyte 13 and the ion diffusion of polishing area and new
The supplement of electrolyte 13, and reduce electrolysis temperature difference, guarantee optimum polishing condition, so that the electrolysis of anode 11 be promoted to throw
Light after 11 electrobrightening of anode, makes electric pushrod 17 drive the stirring frame on top plate 18 finally according to the situation of electrobrightening
22, agitating shaft 23 and link block 24 remove electrolyte 13, then distinguish ceramic electric heating plate 15, electric pushrod 17, motor 20
It is electrically connected with external power supply disconnection, and is turned off, cleans up electrolyte in time and takes out anode 11.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (8)
1. a kind of electrolytic buffing attachment of semiconductor material, including bottom plate (1), which is characterized in that the upper end side of the bottom plate (1)
It is fixedly connected on wall erection seat (2), the upper end of described device seat (2) is equipped with electrolytic cell (3), and the electrolytic cell (3) is equipped with
The side side wall of opening up electrolytic cell (4), the electrolytic cell (3) is equipped with constant-current supply (5), and the electrolytic cell (4) is leaned on
It is fixedly connected with cathode (6) on the inner wall of nearly constant-current supply (5) side, the cathode (6) is platinum electrode, the electrolytic cell (4)
Bottom interior wall in be fixedly connected with bearing pads (7), the cathode (6) passes through the cathode of the first conducting wire (8) and constant-current supply (5)
It is electrically connected, is electrically connected by the second conducting wire (9) with the anode of constant-current supply (5) on the side side wall of the bearing pads (7), it is described
Spacing are equipped with multiple anodes (11) on the upper end side wall of bearing pads (7) etc., and multiple anodes (11) are polished semiconductor
Material, the electrolytic cell (4) is built-in to be filled electrolyte (13), electrolyte (13) submergence cathode (6) and anode (11), described
Heating device is equipped in erection seat (2), the bottom plate (1) is equipped with lifting rabbling mechanism.
2. a kind of electrolytic buffing attachment of semiconductor material according to claim 1, which is characterized in that the bearing pads
(7) spacing are equipped with multiple bearing grooves (10) on upper end side wall etc., and multiple anodes (11) are separately positioned on multiple bearing grooves
(10) in, multiple anodes (11) are electrically connected by conducting resinl (12) with bearing pads (7).
3. a kind of electrolytic buffing attachment of semiconductor material according to claim 1, which is characterized in that the heating device
Including being arranged ceramic electric heating plate (15) in the side wall of erection seat (2), the upper end side wall of described device seat (2) be equipped with
The corresponding placing groove (14) in electrolytic cell (3) position, the lower end of the electrolytic cell (3) are located in placing groove (14), the ceramics
Electric boiling plate (15) is arranged in the underface of placing groove (14).
4. a kind of electrolytic buffing attachment of semiconductor material according to claim 1, which is characterized in that the electrolytic cell
(3) it is fixedly connected on side side wall mounting plate (16), the bottom side of the wall of the constant-current supply (5) is upper with mounting plate (16)
End side wall is fixedly connected.
5. a kind of electrolytic buffing attachment of semiconductor material according to claim 1, which is characterized in that the lifting stirring
Mechanism includes the electric pushrod (17) being fixedly connected on the upper end side wall of bottom plate (1), electric pushrod (17) output shaft
Endways are fixedly connected with top plate (18), are fixedly connected with electricity by mounting base (19) on the upper end side wall of the top plate (18)
Jointly through equipped with through-hole (21), the through-hole (21) and electricity on the side wall of machine (20), the mounting base (19) and top plate (18)
Xie Chi (3) is concentric setting, and motor (20) the output the tip of the axis is through through-hole (21) and is fixedly connected with stirring frame
(22), the output shaft of the motor (20) is rotatablely connected by bearing and the inner wall of through-hole (21), and the two of the stirring frame (22)
Multiple agitating shafts (23) equidistantly are equipped on the side wall of side, multiple agitating shafts (23) pass through link block (24) and stirring frame
(22) two sides side wall is fixedly connected.
6. a kind of electrolytic buffing attachment of semiconductor material according to claim 5, which is characterized in that the stirring frame
(22) it is set as rectangular box, the quantity of multiple agitating shafts (23) is at least five, the shape of multiple agitating shafts (23)
Shape is set as strip rectangle, and length is alternate respectively between any two for the one end of multiple agitating shafts (23) far from stirring frame (22) sets
It sets.
7. a kind of electrolytic buffing attachment of semiconductor material according to claim 1, which is characterized in that the electrolytic cell
(3) there are two symmetrical handles (25) for rotation connection respectively on side wall.
8. a kind of electrolytic polishing method of semiconductor material, which comprises the following steps:
S1, the preparation before electrobrightening is carried out to the anode 11 of multiple polished semiconductor materials, to the surface of anode 11 into
Row primary manual grinding processing, removes the impurity remained on surface of anode 11, and clean using clear water to 11 surface of anode；
The anode 11 of multiple polished semiconductor materials is passed sequentially through 12 adhesion of conducting resinl and is fixed on multiple bearing grooves 10 by S2
It is interior；
S3 pours into prepared appropriate electrolyte 13 in the electrolytic cell 4 on electrolytic cell 3, it is ensured that electrolyte 13 can submerge cathode 6
Electrolytic cell 3 can't be overflowed with anode 11, cathode 6 and anode 11 are electrically connected by electrolyte 13 and constant-current supply 5 at this time is connected into one
A circuit；
S4 is lifted electrolytic cell 3 in the placing groove 14 being placed on erection seat 2 by handle 25, by ceramic electric heating plate 15, electricity
Dynamic push rod 17, motor 20 are electrically connected with external power supply respectively, and are started；
S5, ceramic electric heating plate 15 can suitably heat the electrolyte 13 in electrolytic cell 3 at this time, its temperature is made to be located at 30
Between DEG C -70 DEG C, electric pushrod 17 drives stirring frame 22, agitating shaft 23 and link block 24 on top plate 18 to immerse electrolyte 13
In, motor 20 can drive stirring frame 22 and agitating shaft 23 to rotate and be stirred to electrolyte 13, to promote the electrolysis of anode 11
Polishing；
S6 after 11 electrobrightening of anode, makes electric pushrod 17 drive the stirring frame on top plate 18 according to the situation of electrobrightening
22, agitating shaft 23 and link block 24 remove electrolyte 13, then distinguish ceramic electric heating plate 15, electric pushrod 17, motor 20
It is electrically connected with external power supply disconnection, and is turned off, cleans up electrolyte in time and takes out anode 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN111304729A (en) * | 2020-03-23 | 2020-06-19 | 江苏中佰纳米新材料科技有限公司 | Magnetoelectric polishing device for flat metal |
| CN112853460A (en) * | 2021-01-08 | 2021-05-28 | 南京宫秀商贸有限公司 | Electroplating device with adjustable |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111304729A (en) * | 2020-03-23 | 2020-06-19 | 江苏中佰纳米新材料科技有限公司 | Magnetoelectric polishing device for flat metal |
| CN112853460A (en) * | 2021-01-08 | 2021-05-28 | 南京宫秀商贸有限公司 | Electroplating device with adjustable |
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| CN110257895B (en) | 2021-03-23 |
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